| Year |
Citation |
Score |
| 2019 |
Liang J, Yao X, Zhang YJ, Chen F, Chen Y, Sou IK. Formation of Fe-Te Nanostructures during Fe Heavy Doping of BiTe. Nanomaterials (Basel, Switzerland). 9. PMID 31121906 DOI: 10.3390/nano9050782 |
0.319 |
|
| 2012 |
Lai YH, Cheung WY, Lok SK, Wong GKL, Ho SK, Tam KW, Sou IK. Rocksalt MgS solar blind ultra-violet detectors Aip Advances. 2. DOI: 10.1063/1.3690124 |
0.365 |
|
| 2009 |
Lok S, Li B, Wang J, Wong GKL, Sou I. Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots Journal of Crystal Growth. 311: 2155-2159. DOI: 10.1016/J.Jcrysgro.2008.10.015 |
0.367 |
|
| 2007 |
Li B, Wang C, Sou I, Ge W, Wang J. Anomalous photocurrent observed in an Fe–ZnS:Fe Schottky diode Applied Physics Letters. 91: 172104. DOI: 10.1063/1.2801707 |
0.359 |
|
| 2007 |
Li B, Wang C, Sou I, Ge W, Wang J. Photocurrent spectroscopy of an Fe/Zn0.96Fe0.04S schottky diode Physica B-Condensed Matter. 401: 48-50. DOI: 10.1016/J.Physb.2007.08.111 |
0.355 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Miotkowski I, Ramdas AK, Su C, Sou IK, Perera RCC, Denlinger JD. Origin of the large band-gap bowing in highly mismatched semiconductor alloys Physical Review B. 67. DOI: 10.1103/Physrevb.67.035207 |
0.321 |
|
| 2003 |
Lu L, Yang C, Wang J, Sou I, Ge W. Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS Journal of Applied Physics. 93: 5325-5330. DOI: 10.1063/1.1559633 |
0.375 |
|
| 2002 |
Wang J, Yang C, Wang S, Guo L, Yang S, Sou I, Ge W. Characterization of Semiconductor Quantum Dots International Journal of Modern Physics B. 16: 4363-4372. DOI: 10.1142/S0217979202015443 |
0.362 |
|
| 2000 |
Lu L, Mak KK, Ma ZH, Wang J, Sou I, Ge W. DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy Journal of Crystal Growth. 216: 141-146. DOI: 10.1016/S0022-0248(00)00419-X |
0.314 |
|
| 1997 |
Ge W, Lam SB, Sou I, Wang J, Wang Y, Li G, Han H, Wang Z. Sulfur forming an isoelectronic center in zinc telluride thin films Physical Review B. 55: 10035-10039. DOI: 10.1103/Physrevb.55.10035 |
0.356 |
|
| 1997 |
Lu L, Ge W, Sou I, Wang Y, Wang J, Ma ZH, Chen WS, Wong GKL. Deep Electron States in n-type Al-doped ZnS1-xTex Grown by Molecular Beam Epitaxy Journal of Applied Physics. 82: 4412-4416. DOI: 10.1063/1.366168 |
0.361 |
|
| 1995 |
Chan Y, Wang H, Sou I, Wong K, Wong GKL. Molecular beam epitaxial growth and characterization of ZnSTe epilayers and ZnSTe/ZnSe superlattices on Si substrates Journal of Crystal Growth. 150: 760-764. DOI: 10.1016/0022-0248(95)80042-B |
0.433 |
|
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