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William C. Burdett, Ph.D. - Publications

Affiliations: 
2004 University of Central Florida, Orlando, FL, United States 
Area:
Condensed Matter Physics
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Lopatiuk O, Burdett W, Chernyak L, Ip KP, Heo YW, Norton DP, Pearton SJ, Hertog B, Chow PP, Osinsky A. Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus Applied Physics Letters. 86: 012105. DOI: 10.1063/1.1844037  0.674
2004 Burdett W, Lopatiuk O, Chernyak L, Hermann M, Stutzmann M, Eickhoff M. Electron injection-induced effects in Mn-doped GaN Journal of Applied Physics. 96: 3556-3558. DOI: 10.1063/1.1780606  0.705
2003 Chernyak L, Burdett W, Klimov M, Osinsky A. Cathodoluminescence studies of the electron injection-induced effects in GaN Applied Physics Letters. 82: 3680-3682. DOI: 10.1063/1.1578514  0.719
2003 Burdett W, Osinsky A, Kotlyarov V, Chow P, Dabiran A, Chernyak L. Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN Solid-State Electronics. 47: 931-935. DOI: 10.1016/S0038-1101(02)00449-5  0.681
2003 Burdett W, Lopatiuk O, Osinsky A, Pearton S, Chernyak L. The optical signature of electron injection in p-(Al)GaN Superlattices and Microstructures. 34: 55-62. DOI: 10.1016/J.Spmi.2004.02.019  0.694
2002 Chernyak L, Burdett W, Osinsky A. Study of temperature dependence for the electron injection-induced effects in GaN Applied Physics Letters. 81: 1633-1635. DOI: 10.1063/1.1503407  0.713
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