| Year |
Citation |
Score |
| 2018 |
Mintairov AM, Merz JL, Kapaldo J, Vlasov AS, Blundell SA. Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots Semiconductors. 52: 502-506. DOI: 10.1134/S1063782618040218 |
0.453 |
|
| 2018 |
Lebedev DV, Kalyuzhnyy NA, Mintairov SA, Belyaev KG, Rakhlin MV, Toropov AA, Brunkov P, Vlasov AS, Merz J, Rouvimov S, Oktyabrsky S, Yakimov M, Mukhin IV, Shelaev AV, Bykov VA, et al. Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy Semiconductors. 52: 497-501. DOI: 10.1134/S1063782618040206 |
0.463 |
|
| 2018 |
Mintairov AM, Kapaldo J, Merz JL, Rouvimov S, Lebedev DV, Kalyuzhnyy NA, Mintairov SA, Belyaev KG, Rakhlin MV, Toropov AA, Brunkov PN, Vlasov AS, Zadiranov YM, Blundell SA, Mozharov AM, et al. Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures Physical Review B. 97. DOI: 10.1103/Physrevb.97.195443 |
0.435 |
|
| 2017 |
Lebedev DV, Mintairov AM, Vlasov AS, Davydov VY, Kulagina MM, Troshkov SI, Bogdanov AA, Smirnov AN, Gocalinska A, Juska G, Pelucchi E, Kapaldo J, Rouvimov S, Merz JL. Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures Technical Physics. 62: 1082-1086. DOI: 10.1134/S1063784217070106 |
0.445 |
|
| 2017 |
Mintairov AM, Kapaldo J, Merz JL, Vlasov AS, Blundell SA. Wigner molecules and charged excitons in near-field magnetophotoluminescence spectra of self-organized InP/GaInP quantum dots Physical Review B. 95: 115442. DOI: 10.1103/Physrevb.95.115442 |
0.419 |
|
| 2017 |
Lebedev DV, Kulagina MM, Troshkov SI, Vlasov AS, Davydov VY, Smirnov AN, Bogdanov AA, Merz JL, Kapaldo J, Gocalińska AM, Juska G, Moroni ST, Pelucchi E, Barettin D, Rouvimov S, et al. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk Applied Physics Letters. 110: 121101. DOI: 10.1063/1.4979029 |
0.479 |
|
| 2016 |
Lebedev DV, Mintairov AM, Kulagina MM, Troshkov SI, Kapaldo J, Merz JL, Rouvimov S, Juska G, Gocalinska A, Moroni ST, Pelucchi E. Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity Journal of Physics: Conference Series. 690: 012023. DOI: 10.1088/1742-6596/690/1/012023 |
0.332 |
|
| 2016 |
Mintairov AM, He Y, Merz JL, Jin Y, Goldman RS, Kudrawiec R, Misiewicz J, Akimov IA, Yakovlev DR, Bayer M. Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/9/095012 |
0.358 |
|
| 2016 |
Kapaldo J, Rouvimov S, Merz JL, Oktyabrsky S, Blundell SA, Bert N, Brunkov P, Kalyuzhnyy NA, Mintairov SA, Nekrasov S, Saly R, Vlasov AS, Mintairov AM. Ga-In intermixing, intrinsic doping, and Wigner localization in the emission spectra of self-organized InP/GaInP quantum dots Journal of Physics D. 49: 475301. DOI: 10.1088/0022-3727/49/47/475301 |
0.42 |
|
| 2014 |
Berger C, Huttner U, Mootz M, Kira M, Koch SW, Tempel JS, Aßmann M, Bayer M, Mintairov AM, Merz JL. Quantum-memory effects in the emission of quantum-dot microcavities. Physical Review Letters. 113: 093902. PMID 25215985 DOI: 10.1103/Physrevlett.113.093902 |
0.8 |
|
| 2014 |
Kudrawiec R, Sitarek P, Gladysiewicz M, Misiewicz J, He Y, Jin Y, Vardar G, Mintarov AM, Merz JL, Goldman RS, Yu KM, Walukiewicz W. Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers Thin Solid Films. 567: 101-104. DOI: 10.1016/J.Tsf.2014.07.052 |
0.353 |
|
| 2011 |
Pimpinella RE, Mintairov AM, Liu X, Kosel TH, Merz JL, Furdyna JK, Dobrowolska M. Optical measurements of single CdTe self-assembled quantum dots grown on ZnTe/GaSb Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3562182 |
0.407 |
|
| 2011 |
Liu X, Mintairov AM, Herzog J, Vietmeyer F, Pimpinella RE, Kuno M, Merz JL, Kosel TH, Dobrowolska M, Furdyna JK. II-VI heterostructures obtained by encapsulation of colloidal CdSe nanowires by molecular beam epitaxy deposition of ZnSe Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547715 |
0.715 |
|
| 2010 |
Sizov VS, Neploh VV, Tsatsulnikov AF, Sakharov AV, Lundin WV, Zavarin EE, Nikolaev AE, Mintairov AM, Merz JL. Study of tunneling transport of carriers in structures with an InGaN/GaN active region Semiconductors. 44: 1567-1575. DOI: 10.1134/S1063782610120067 |
0.353 |
|
| 2010 |
Sizov VS, Tsatsulnikov AF, Sakharov AV, Lundin WV, Zavarin EE, Cherkashin N, Hÿtch M, Nikolaev AE, Mintairov AM, He Y, Merz JL. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes Semiconductors. 44: 924-930. DOI: 10.1134/S106378261007016X |
0.436 |
|
| 2010 |
Mintairov AM, Kalugnyy NA, Lantratov VM, Mintairov SA, Merz JL. Quantum Hall regime in emission spectra of single self-organized InP/GaInP quantum dots Journal of Physics: Conference Series. 245: 012041. DOI: 10.1088/1742-6596/245/1/012041 |
0.337 |
|
| 2010 |
Pimpinella RE, Liu X, Furdyna JK, Dobrowolska M, Mintairov AM, Merz JL. Self-assembled CdTe quantum dots grown on ZnTe/GaSb Journal of Electronic Materials. 39: 992-995. DOI: 10.1007/S11664-010-1107-6 |
0.478 |
|
| 2010 |
Chu Y, Mintairov AM, He Y, Merz JL, Kalugnyy NA, Lantratov VM, Mintairov SA. Lasing of whispering-gallery modes in GaInP waveguide micro-discs and rings with InP quantum dots Physica Status Solidi (C). 8: 325-327. DOI: 10.1002/Pssc.201000537 |
0.446 |
|
| 2010 |
Mintairov AM, Herzog J, Kuno M, Merz JL. Near-field scanning optical microscopy of colloidal CdSe nanowires Physica Status Solidi (B) Basic Research. 247: 1416-1419. DOI: 10.1002/Pssb.200983201 |
0.706 |
|
| 2009 |
Mintairov AM, Sun K, Merz JL, Yuen H, Bank S, Wistey M, Harris JS, Peake G, Egorov A, Ustinov V, Kudrawiec R, Misiewicz J. Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/7/075013 |
0.472 |
|
| 2009 |
Chu Y, Mintairov AM, He Y, Merz JL, Kalyuzhnyy NA, Lantratov VM, Mintairov SA. Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots Physics Letters A. 373: 1185-1188. DOI: 10.1016/J.Physleta.2009.02.003 |
0.363 |
|
| 2008 |
Mintairov AM, Chu Y, He Y, Blokhin S, Nadtochy A, Maximov M, Tokranov V, Oktyabrsky S, Merz JL. High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.195322 |
0.408 |
|
| 2007 |
Sizov DS, Sizov VS, Lundin VV, Zavarin EE, Tsatsul'nikov AF, Musikhin YG, Vlasov AS, Ledentsov NN, Mintairov AM, Sun K, Merz J. INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR International Journal of Nanoscience. 6: 327-332. DOI: 10.1142/S0219581X07004882 |
0.453 |
|
| 2006 |
Wang K, Cao Y, Simon J, Zhang J, Mintairov A, Merz J, Hall D, Kosel T, Jena D. Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy Applied Physics Letters. 89. DOI: 10.1063/1.2364456 |
0.771 |
|
| 2006 |
Vandervelde TE, Sun K, Merz JL, Kubis A, Hull R, Pernell TL, Bean JC. The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed Journal of Applied Physics. 99. DOI: 10.1063/1.2203203 |
0.44 |
|
| 2006 |
Sizov DS, Sizov VS, Lundin VV, Zavarin EE, Tsatsul'nikov AF, Vlasov AS, Musikhin YG, Ledentsov NN, Mintairov AM, Sun K, Merz J. Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance Physica Status Solidi (C). 3: 2043-2047. DOI: 10.1002/Pssc.200565465 |
0.489 |
|
| 2005 |
Mintairov A, Merz J, Sizov D, Sizov V, Lundin V, Usov S, Zavarin E, Tsatsul'nikov A, Musikhin Y, Vlasov A, Ledentsov N. Near-field photoluminescence spectroscopy of InGaN quantum dots Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff32-06 |
0.803 |
|
| 2005 |
Mintairov A, Tang Y, Merz J, Tokranov V, Oktyabrsky S. Single dot near-field spectroscopy for photonic crystal microcavities Physica Status Solidi C: Conferences. 2: 845-849. DOI: 10.1002/Pssc.200460326 |
0.802 |
|
| 2004 |
Mintairov A, Kosel T, Sun K, Ustinov V, Merz J. Near-Field Scanning Optical Microscopy of Phase Separation Effects in Dilute Nitride Alloys. Mrs Proceedings. 838. DOI: 10.1557/Proc-838-O3.1 |
0.804 |
|
| 2004 |
Mintairov AM, Sun K, Merz JL, Li C, Vlasov AS, Vinokurov DA, Kovalenkov OV, Tokranov V, Oktyabrsky S. Nanoindentation and near-field spectroscopy of single semiconductor quantum dots Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.155306 |
0.484 |
|
| 2004 |
Prutskij T, Díaz-Arencibia P, Brito-Orta RA, Mintairov A, Kosel T, Merz J. Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy Journal of Physics D. 37: 1563-1568. DOI: 10.1088/0022-3727/37/11/010 |
0.795 |
|
| 2004 |
Mintairov AM, Blagnov PA, Merz JL, Ustinov VM, Vlasov AS, Kovsh AR, Wang JS, Wei L, Chi JY. Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys Physica E: Low-Dimensional Systems and Nanostructures. 21: 385-389. DOI: 10.1016/J.Physe.2003.11.081 |
0.468 |
|
| 2004 |
Prutskij T, Dı́az-Arencibia P, Silva-Andrade F, Mintairov A, Kosel T, Merz J. Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE technique Journal of Non-Crystalline Solids. 338: 269-272. DOI: 10.1016/J.Jnoncrysol.2004.02.084 |
0.801 |
|
| 2004 |
Prutskij T, Dı́az-Arencibia P, Brito-Orta RA, Mintairov A, Kosel T, Merz J. Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy Applied Surface Science. 234: 462-467. DOI: 10.1016/J.Apsusc.2004.05.071 |
0.789 |
|
| 2003 |
Mintairov AM, Vlasov AS, Merz JL. Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. Mrs Proceedings. 794. DOI: 10.1557/Proc-794-T6.8/N8.8/Z6.8 |
0.472 |
|
| 2003 |
Gadzhiev GM, Golubev VG, Zamoryanskaya MV, Kurdyukov DA, Medvedev AV, Merz J, Mintairov A, Pevtsov AB, Sel’kin AV, Travnikov VV, Sharenkova NV. Fabrication and optical properties of photonic crystals based on opal-GaP and opal-GaPN composites Semiconductors. 37: 1400-1405. DOI: 10.1134/1.1634661 |
0.775 |
|
| 2003 |
Mintairov AM, Blagnov PA, Merz JL, Ustinov VM, Vlasov AS, Kovsh AR, Wang JS, Wei L, Chi JY. Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence spectra of InGaAsN alloys Proceedings of Spie - the International Society For Optical Engineering. 5023: 157-160. DOI: 10.1117/12.511847 |
0.342 |
|
| 2003 |
Mintairov AM, Merz JL, Vlasov AS. Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP 2 Physical Review B. 67: 205211. DOI: 10.1103/Physrevb.67.205211 |
0.316 |
|
| 2003 |
Krestnikov IL, Heitz R, Ledentsov NN, Hoffmann A, Mintairov AM, Kosel TH, Merz JL, Soshnikov IP, Ustinov VM. Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys Applied Physics Letters. 83: 3728-3730. DOI: 10.1063/1.1623320 |
0.396 |
|
| 2003 |
Prutskij TA, Dı́az-Arencibia P, Mintairov A, Merz J, Kosel T. Some evidences of ordering in InGaP layers grown by liquid phase epitaxy Applied Surface Science. 230-234. DOI: 10.1016/S0169-4332(03)00408-2 |
0.795 |
|
| 2002 |
Mintairov AM, Blagnov PA, Kovalenkov OV, Li C, Merz JL, Oktyabrsky S, Sun K, Tokranov V, Vlasov AS, Vinokurov DA. Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots. Mrs Proceedings. 737. DOI: 10.1557/Proc-737-E7.4 |
0.45 |
|
| 2002 |
Mintairov AM, Blagnov PA, Kovalenkov OV, Li C, Merz JL, Oktyabrsky S, Tokranov V, Vlasov AS, Vinokurov DA. Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots. Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K11.2 |
0.448 |
|
| 2001 |
Mintairov AM, Kosel TH, Merz JL, Blagnov PA, Vlasov AS, Ustinov VM, Cook RE. Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN. Physical Review Letters. 87: 277401. PMID 11800913 DOI: 10.1103/PhysRevLett.87.277401 |
0.798 |
|
| 2001 |
Mintairov AM, Blagnov PA, Kosel T, Merz JL, Ustinov VM, Vlasov AS, REC. Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H2.8.1 |
0.44 |
|
| 2001 |
Prutskij TA, Arencibia PD, Mintairov A, Merz J, Kosel TH. ORDERED VERSUS DISORDERED InGaP LAYERS GROWN BY LIQUID PHASE EPITAXY Modern Physics Letters B. 15: 651-654. DOI: 10.1142/S021798490100221X |
0.787 |
|
| 2001 |
Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R, Mintairov A, Merz JL. Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates Journal of Electronic Materials. 30: 471-476. DOI: 10.1007/S11664-001-0085-0 |
0.805 |
|
| 2000 |
Mintairov AM, Vlasov AS, Merz JL, Kovalenkov OV, Reynolds JP, Vinokurov DA. Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots Mrs Proceedings. 618: 207. DOI: 10.1557/Proc-618-207 |
0.501 |
|
| 2000 |
Raymond S, Hinzer K, Fafard S, Merz JL. Experimental determination of Auger capture coefficients in self-assembled quantum dots Physical Review B. 61. DOI: 10.1103/Physrevb.61.R16331 |
0.429 |
|
| 2000 |
Sparing LM, Mintairov AM, Hodak JH, Martini IB, Hartland GV, Bindley U, Lee S, Furdyna JK, Merz JL, Snider GL. Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells Journal of Applied Physics. 87: 3063-3067. DOI: 10.1063/1.372300 |
0.419 |
|
| 2000 |
Tsatsul’nikov AF, Kovsh AR, Zhukov AE, Shernyakov YM, Musikhin YG, Ustinov VM, Bert NA, Kop’ev PS, Alferov ZI, Mintairov AM, Merz JL, Ledentsov NN, Bimberg D. Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm Journal of Applied Physics. 88: 6272-6275. DOI: 10.1063/1.1321795 |
0.447 |
|
| 2000 |
Mintairov A, Merz J, Osinsky A, Fuflyigin V, Zhu LD. Infrared spectroscopy of ZnSiN2 single-crystalline films on r-sapphire Applied Physics Letters. 76: 2517-2519. DOI: 10.1063/1.126394 |
0.772 |
|
| 2000 |
Raymond S, Fafard S, Hinzer K, Charbonneau S, Merz JL. Temporal cross-section for carrier capture by self-assembled quantum dots Microelectronic Engineering. 53: 241-244. DOI: 10.1016/S0167-9317(00)00306-3 |
0.45 |
|
| 1999 |
Mintairov AM, Vlasov AS, Merz JL, Korakakis D, Moustakas TD, Osinsky AO, Gaska R, Smirnov MB. Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys Mrs Proceedings. 572: 427. DOI: 10.1557/Proc-572-427 |
0.306 |
|
| 1999 |
Robinson HD, Goldberg BB, Merz JL. Lateral coupling of self-assembled quantum dots studied by near-field spectroscopy Materials Research Society Symposium - Proceedings. 571: 89-94. DOI: 10.1557/Proc-571-89 |
0.499 |
|
| 1999 |
Snider GL, Orlov AO, Amlani I, Bernstein GH, Lent CS, Merz JL, Porod W. Quantum-dot cellular automata: Line and majority logic gate Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 7227-7229. DOI: 10.1143/Jjap.38.7227 |
0.406 |
|
| 1999 |
Mintairov AM, Raymond S, Merz JL, Peiris FC, Lee SH, Bindley U, Furdyna JK, Melehin VG, Sadchikov K. Optical spectra of wide band gap Be x Zn 1−x Se alloys Semiconductors. 33: 1021-1023. DOI: 10.1134/1.1187830 |
0.383 |
|
| 1999 |
Raymond S, Guo X, Merz JL, Fafard S. Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy Physical Review B. 59: 7624-7631. DOI: 10.1103/Physrevb.59.7624 |
0.33 |
|
| 1999 |
Porod W, Lent CS, Bernstein GH, Orlov AO, Amlani I, Snider GL, Merz JL. Quantum-dot cellular automata: Computing with coupled quantum dots International Journal of Electronics. 86: 549-590. DOI: 10.1080/002072199133265 |
0.447 |
|
| 1999 |
Snider GL, Orlov AO, Amlani I, Zuo X, Bernstein GH, Lent CS, Merz JL, Porod W. Quantum-dot cellular automata: Review and recent experiments (invited) Journal of Applied Physics. 85: 4283-4285. DOI: 10.1063/1.370344 |
0.402 |
|
| 1999 |
Seryogin GA, Nikishin SA, Temkin H, Mintairov AM, Merz JL, Holtz M. Order–disorder transition in epitaxial ZnSnP2 Applied Physics Letters. 74: 2128-2130. DOI: 10.1063/1.123778 |
0.378 |
|
| 1998 |
Lee S, Daruka I, Kim CS, Barabási A, Merz JL, Furdyna JK. Dynamics of Ripening of Self-Assembled II-VI Semiconductor Quantum Dots Physical Review Letters. 81: 3479-3482. DOI: 10.1103/Physrevlett.81.3479 |
0.414 |
|
| 1998 |
Raymond S, Reynolds JP, Merz JL, Fafard S, Feng Y, Charbonneau S. Asymmetric Stark shift in Al x In 1-x As/Al y Ga 1-y As self-assembled dots Physical Review B. 58. DOI: 10.1103/Physrevb.58.R13415 |
0.405 |
|
| 1998 |
Holtz PO, Ferreira AC, Sernelius BE, Buyanov A, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Many-body effects in highly acceptor-doped GaAs/Al x Ga 1-x As quantum wells Physical Review B. 58: 4624-4628. DOI: 10.1103/Physrevb.58.4624 |
0.372 |
|
| 1998 |
Snider GL, Orlov AO, Amlani I, Bernstein GH, Lent CS, Merz JL, Porod W. Experimental demonstration of quantum-dot cellular automata Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/038 |
0.416 |
|
| 1998 |
Mintairov AM, Merz JL, Vlasov AS, Vinokurov DV. Observation of a martensitic transition in the Raman spectra of spontaneously ordered GaInP alloys Semiconductor Science and Technology. 13: 1140-1147. DOI: 10.1088/0268-1242/13/10/015 |
0.359 |
|
| 1998 |
Kim JC, Rho H, Smith LM, Jackson HE, Lee S, Dobrowolska M, Merz JL, Furdyna JK. Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots Applied Physics Letters. 73: 3399-3401. DOI: 10.1063/1.122779 |
0.47 |
|
| 1998 |
Robinson HD, Müller MG, Goldberg BB, Merz JL. Local optical spectroscopy of self-assembled quantum dots using a near-field optical fiber probe to induce a localized strain field Applied Physics Letters. 72: 2081-2083. DOI: 10.1063/1.121282 |
0.426 |
|
| 1998 |
Lundström T, Holtz PO, Bergman JP, Buyanov A, Monemar B, Campman K, Merz JL, Gossard AC. Dynamical studies of the radiative recombination process in a modulation doped GaAs/AlGaAs heterostructure Physica B-Condensed Matter. 249: 767-770. DOI: 10.1016/S0921-4526(98)00310-X |
0.36 |
|
| 1998 |
Snider GL, Orlov AO, Amlani I, Bernstein GH, Lent CS, Merz JL, Porod W. A functional cell for quantum-dot cellular automata Solid-State Electronics. 42: 1355-1359. DOI: 10.1016/S0038-1101(98)00030-6 |
0.401 |
|
| 1998 |
Merz JL, Lee SH, Furdyna JK. Self-organized growth, ripening, and optical properties of wide-bandgap II–VI quantum dots Journal of Crystal Growth. 228-236. DOI: 10.1016/S0022-0248(98)80050-X |
0.481 |
|
| 1997 |
Lundström T, Bergman JP, Holtz PO, Monemar B, Campman K, Merz JL, Gossard AC. Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface Acta Physica Polonica A. 92: 824-828. DOI: 10.12693/Aphyspola.92.824 |
0.307 |
|
| 1997 |
Sparing LM, Wang PD, Mintairov AM, Lee SH, Bindley U, Chen CH, Shi SS, Furdyna JK, Merz JL, Snider GL. Ion induced damage in strained CdZnSe/ZnSe quantum well structures Journal of Vacuum Science & Technology B. 15: 2652-2655. DOI: 10.1116/1.589702 |
0.382 |
|
| 1997 |
Mintairov AM, Blagnov PA, Melehin VG, Faleev NN, Merz JL, Qiu Y, Nikishin SA, Temkin H. Ordering effects in Raman spectra of coherently strained GaAs 1 − x N x Physical Review B. 56: 15836-15841. DOI: 10.1103/Physrevb.56.15836 |
0.38 |
|
| 1997 |
Ferreira AC, Holtz PO, Buyanova I, Monemar B, Sundaram M, Merz JL, Gossard AC. Optical spectroscopy of MBE grown quantum wells at various acceptor doping levels Thin Solid Films. 306: 244-247. DOI: 10.1016/S0040-6090(97)00178-8 |
0.488 |
|
| 1997 |
Tsiper EV, Wang PD, Merz JL, Efros AL, Fafard S, Leonard D, Petroff PM. Anomalous magnetophotoluminescence as a result of level repulsion in arrays of quantum dots Solid State Communications. 104: 391-395. DOI: 10.1016/S0038-1098(97)00358-X |
0.39 |
|
| 1997 |
Raymond S, Hawrylak P, Gould C, Fafard S, Sachrajda A, Potemski M, Wojs A, Charbonneau S, Leonard D, Petroff P, Merz J. Exciton droplets in zero dimensional systems in a magnetic field Solid State Communications. 101: 883-887. DOI: 10.1016/S0038-1098(96)00750-8 |
0.37 |
|
| 1997 |
Raymond S, Fafard S, Poole P, Wojs A, Hawrylak P, Gould C, Sachrajda S, Charbonneau S, Leonard D, Leon R, Petroff P, Merz J. State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots Superlattices and Microstructures. 21: 541-558. DOI: 10.1006/Spmi.1996.0194 |
0.411 |
|
| 1997 |
Wang PD, Merz JL, Medeiros-Ribeiro G, Fafard S, Petroff PM, Akiyama H, Sakaki H. Luminescence spectroscopy of InAs self-assembled quantum dots Superlattices and Microstructures. 21: 259-266. DOI: 10.1006/Spmi.1996.0193 |
0.459 |
|
| 1996 |
Ferreira AC, Holtz PO, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells. Physical Review. B, Condensed Matter. 54: 16994-16997. PMID 9985830 DOI: 10.1103/Physrevb.54.16994 |
0.441 |
|
| 1996 |
Ferreira AC, Holtz PO, Sernelius BE, Buyanova I, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime. Physical Review. B, Condensed Matter. 54: 16989-16993. PMID 9985829 DOI: 10.1103/Physrevb.54.16989 |
0.447 |
|
| 1996 |
Raymond S, Fafard S, Poole PJ, Wojs A, Hawrylak P, Charbonneau S, Leonard D, Leon R, Petroff PM, Merz JL. State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots. Physical Review. B, Condensed Matter. 54: 11548-11554. PMID 9984943 DOI: 10.1103/Physrevb.54.11548 |
0.372 |
|
| 1996 |
Buyanov AV, Ferreira AC, Söderström E, Buyanova IA, Holtz PO, Sernelius B, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 53: 1357-1361. PMID 9983595 DOI: 10.1103/Physrevb.53.1357 |
0.393 |
|
| 1996 |
Wang PD, Merz JL, Fafard S, Leon R, Leonard D, Medeiros-Ribeiro G, Oestreich M, Petroff PM, Uchida K, Miura N, Akiyama H, Sakaki H. Magnetoluminescence studies of InyAl1-yAs self-assembled quantum dots in AlxGa1-xAs matrices. Physical Review. B, Condensed Matter. 53: 16458-16461. PMID 9983487 DOI: 10.1103/Physrevb.53.16458 |
0.456 |
|
| 1996 |
Ngo TT, Petroff PM, Sakaki H, Merz JL. Simulation model for self-ordering of strained islands in molecular-beam epitaxy. Physical Review. B, Condensed Matter. 53: 9618-9621. PMID 9982515 DOI: 10.1103/Physrevb.53.9618 |
0.336 |
|
| 1996 |
Weman H, Potemski M, Lazzouni ME, Miller MS, Merz JL. Magneto-optical determination of exciton binding energies in quantum-wire superlattices. Physical Review. B, Condensed Matter. 53: 6959-6962. PMID 9982132 DOI: 10.1103/Physrevb.53.6959 |
0.462 |
|
| 1996 |
Sparing LM, Wang PD, Xin SH, Short SW, Shi SS, Furdyna JK, Merz JL, Snider GL. Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structures Journal of Vacuum Science & Technology B. 14: 3654-3657. DOI: 10.1116/1.588744 |
0.412 |
|
| 1996 |
Floyd PD, Thibeault BJ, Hegblom ER, Ko J, Coldren LA, Merz JL. Comparison of optical losses in dielectric-apertured vertical-cavity lasers Ieee Photonics Technology Letters. 8: 590-592. DOI: 10.1109/68.491548 |
0.308 |
|
| 1996 |
Johnson JL, Samoska LA, Gossard AC, Merz JL, Jack MD, Chapman GR, Baumgratz BA, Kosai K, Johnson SM. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb Journal of Applied Physics. 80: 1116-1127. DOI: 10.1063/1.362849 |
0.404 |
|
| 1996 |
Xin SH, Wang PD, Yin A, Kim C, Dobrowolska M, Merz JL, Furdyna JK. Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy Applied Physics Letters. 69: 3884-3886. DOI: 10.1063/1.117558 |
0.468 |
|
| 1996 |
Buyanova IA, Ferreira AC, Holtz PO, Monemar B, Campman K, Merz JL, Gossard AC. Effect of hydrogen passivation on Be‐doped AlGaAs/GaAs quantum wells Applied Physics Letters. 68: 1365-1367. DOI: 10.1063/1.116081 |
0.376 |
|
| 1996 |
Floyd P, Thibeault B, Coldren L, Merz J. Scalable etched-pillar, AlAs-oxide defined vertical cavity lasers Electronics Letters. 32: 114. DOI: 10.1049/El:19960050 |
0.338 |
|
| 1996 |
Chang YL, Yi SI, Shi S, Hu E, Weinberg WH, Merz J. Hydrogen ion treatments of oxidized GaAs(100) and A1GaAs(100) surfaces: Surface stoichiometry and electronic properties Applied Surface Science. 104: 422-427. DOI: 10.1016/S0169-4332(96)00181-X |
0.304 |
|
| 1996 |
Wang PD, Merz JL, Fafard S, Leon R, Leonard D, Medeiros-Ribeiro G, Oestreich M, Petroff PM, Ledentsov NN, Kop'ev PS, Ustinov VM, Uchida K, Miura N, Akiyama H, Sakaki H, et al. Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices Physica B-Condensed Matter. 227: 378-383. DOI: 10.1016/0921-4526(96)00447-4 |
0.455 |
|
| 1996 |
Fafard S, Raymond S, Wang G, Leon R, Leonard D, Charbonneau S, Merz JL, Petroff PM, Bowers JE. Temperature effects on the radiative recombination in self-assembled quantum dots Surface Science. 361: 778-782. DOI: 10.1016/0039-6028(96)00532-8 |
0.47 |
|
| 1996 |
Holtz PO, Zhao QX, Monemar B, Willander M, Campman K, Sundaram M, Merz JL, Gossard AC. The D- bound exciton observed in GaAs/AlGaAs quantum wells Surface Science. 361: 439-442. DOI: 10.1016/0039-6028(96)00440-2 |
0.372 |
|
| 1996 |
Ferreira AC, Buyanov AV, Holtz PO, Sernelius BE, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells Surface Science. 420-423. DOI: 10.1016/0039-6028(96)00435-9 |
0.456 |
|
| 1996 |
Ferreira AC, Holtz PO, Sernelius BE, Buyanov A, Monemar B, Ekenberg U, Mauritz O, Sundaram M, Campman K, Merz JL, Gossard AC. Optical studies of acceptor centre doped GaAsAlGaAs quantum wells Solid-State Electronics. 40: 89-92. DOI: 10.1016/0038-1101(95)00219-7 |
0.436 |
|
| 1996 |
Bernstein GH, Bazan G, Chen M, Lent CS, Merz JL, Orlov AO, Porod W, Snider GL, Tougaw PD. Practical issues in the realization of quantum-dot cellular automata Superlattices and Microstructures. 20: 457-459. DOI: 10.1006/Spmi.1996.0102 |
0.428 |
|
| 1995 |
Farfad S, Leon R, Leonard D, Merz JL, Petroff PM. Phonons and radiative recombination in self-assembled quantum dots. Physical Review. B, Condensed Matter. 52: 5752-5755. PMID 9981761 DOI: 10.1103/Physrevb.52.5752 |
0.383 |
|
| 1995 |
Harris CI, Monemar B, Kalt H, Holtz PO, Sundaram M, Merz JL, Gossard AC. Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 51: 13221-13225. PMID 9978121 DOI: 10.1103/Physrevb.51.13221 |
0.384 |
|
| 1995 |
Merz JL. Quantum Wires and Dots Made by Man and by God : A Peek into the Optics Toolbox! Japanese Journal of Applied Physics. 34: 220-223. DOI: 10.7567/Jjaps.34S1.220 |
0.464 |
|
| 1995 |
Bergman JP, Holtz PO, Monemar B, Lindström L, Sundaram M, Gossard AC, Merz JL. Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells Materials Science Forum. 449-454. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.449 |
0.449 |
|
| 1995 |
Yokogawa T, Yoshii S, Tsujimura A, Sasai Y, Merz J. Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers Japanese Journal of Applied Physics. 34. DOI: 10.1143/Jjap.34.L751 |
0.314 |
|
| 1995 |
Leon R, Fafard S, Leonard D, Merz JL, Petroff PM. Visible luminescence from semiconductor quantum dots in large ensembles Applied Physics Letters. 67: 521-523. DOI: 10.1063/1.115175 |
0.494 |
|
| 1995 |
Floyd PD, Merz JL, Luo H, Furdyna JK, Yokogawa T, Yamada Y. Optically pumped CdZnSe/ZnSe blue‐green vertical cavity surface emitting lasers Applied Physics Letters. 66: 2929-2931. DOI: 10.1063/1.114232 |
0.382 |
|
| 1995 |
Holtz PO, Zhao QX, Ferreira AC, Monemar B, Pasquarello A, Sundaram M, Merz JL, Gossard AC. The electronic structure of the acceptor and its bound exciton in a GaAs/AlGaAs QW Solid State Communications. 93: 466-466. DOI: 10.1016/0038-1098(95)80048-4 |
0.358 |
|
| 1995 |
Ferreira AC, Holtz PO, Sernelius BE, Buyanov A, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Spectroscopy studies of highly acceptor doped GaAs/AlGaAs quantum wells Superlattices and Microstructures. 18: 153-155. DOI: 10.1006/Spmi.1995.1100 |
0.433 |
|
| 1995 |
Holtz PO, Zhao QX, Bergman JP, Monemar B, Willander M, Campman K, Sundaram M, Merz JL, Gossard AC. Novel excitonic transitions in n-type GaAs/AlGaAs quantum wells Superlattices and Microstructures. 17: 389-392. DOI: 10.1006/Spmi.1995.1067 |
0.375 |
|
| 1995 |
Weman H, Harris CI, Bergman JP, Miller MS, Yi JC, Merz JL. Temperature dependent effects on luminescence polarization and recombination lifetime in serpentine superlattice quantum wire arrays Superlattices and Microstructures. 17: 61-65. DOI: 10.1006/Spmi.1995.1014 |
0.444 |
|
| 1995 |
Holtz PO, Zhao QX, Monemar B, Sundaram M, Merz JL, Gossard AC. Shake-up intersubband transitions observed in GaAs/AlGaAs quantum wells Superlattices and Microstructures. 17: 23-26. DOI: 10.1006/Spmi.1995.1006 |
0.411 |
|
| 1995 |
Floyd PD, Furdyna JK, Luo H, Merz JL, Yamada Y, Yokogawa T. Recent Results on ZnSe-Based Vertical-Cavity Surface Emitting Lasers Operating in the Blue Physica Status Solidi B-Basic Solid State Physics. 187: 355-361. DOI: 10.1002/Pssb.2221870213 |
0.318 |
|
| 1994 |
Zhao QX, Holtz PO, Pasquarello A, Monemar B, Ferreira AC, Sundaram M, Merz JL, Gossard AC. Magnetic properties of the S-like bound hole states in GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 49: 10794-10797. PMID 10009919 DOI: 10.1103/Physrevb.49.10794 |
0.403 |
|
| 1994 |
Holtz PO, Zhao QX, Ferreira AC, Monemar B, Pasquarello A, Sundaram M, Merz JL, Gossard AC. Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 50: 4901-4904. PMID 9976807 DOI: 10.1103/Physrevb.50.4901 |
0.413 |
|
| 1994 |
Holtz PO, Zhao QX, Monemar B, Sundaram M, Merz JL, Gossard AC. Shake-up intersubband processes in quantum-well luminescence. Physical Review. B, Condensed Matter. 50: 4439-4444. PMID 9976744 DOI: 10.1103/Physrevb.50.4439 |
0.42 |
|
| 1994 |
Harris CI, Monemar B, Kalt H, Holtz PO, Sundaram M, Merz JL, Gossard AC. Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wells. Physical Review. B, Condensed Matter. 50: 18367-18374. PMID 9976273 |
0.347 |
|
| 1994 |
Fafard S, Leon R, Leonard D, Merz JL, Petroff PM. Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall AlyIn1-yAs/AlxGa1-xAs quantum dots. Physical Review. B, Condensed Matter. 50: 8086-8089. PMID 9974817 |
0.332 |
|
| 1994 |
Hu SY, Corzine SW, Law K, Young DB, Gossard AC, Coldren LA, Merz JL. Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers Journal of Applied Physics. 76: 4479-4487. DOI: 10.1063/1.357279 |
0.339 |
|
| 1994 |
Chang Y, Tan I, Hu E, Merz J, Emiliani V, Frova A. Study of hydrogenation on near‐surface strained and unstrained quantum wells Journal of Applied Physics. 75: 3040-3044. DOI: 10.1063/1.356150 |
0.378 |
|
| 1994 |
Emiliani V, Bonanni B, Presilla C, Capizzi M, Frova A, Chang Y, Tan I‐, Merz JL, Colocci M, Gurioli M. Interaction mechanisms of near‐surface quantum wells with oxidized and H‐passivated AlGaAs surfaces Journal of Applied Physics. 75: 5114-5122. DOI: 10.1063/1.355757 |
0.404 |
|
| 1994 |
Ferreira AC, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Photoconductivity investigation of the excitonic Auger recombination in GaAs/AlGaAs quantum wells Applied Physics Letters. 65: 720-721. DOI: 10.1063/1.112235 |
0.497 |
|
| 1994 |
Fafard S, Leonard D, Merz JL, Petroff PM. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots Applied Physics Letters. 65: 1388-1390. DOI: 10.1063/1.112060 |
0.463 |
|
| 1994 |
Chang Y, Tan I, Reaves C, Merz J, Hu E, DenBaars S, Frova A, Emiliani V, Bonanni B. Passivation of InGaAs/InP surface quantum wells by ion‐gun hydrogenation Applied Physics Letters. 64: 2658-2660. DOI: 10.1063/1.111483 |
0.415 |
|
| 1994 |
Wang G, Fafard S, Leonard D, Bowers JE, Merz JL, Petroff PM. Time‐resolved optical characterization of InGaAs/GaAs quantum dots Applied Physics Letters. 64: 2815-2817. DOI: 10.1063/1.111434 |
0.509 |
|
| 1994 |
Fafard S, Leon R, Leonard D, Merz JL, Petroff PM. O-dimensional-induced optical properties in self-assembled quantum dots Superlattices and Microstructures. 16: 303-309. DOI: 10.1016/S0749-6036(09)80020-7 |
0.427 |
|
| 1994 |
Harris CI, Monemar B, Holtz PO, Kalt H, Sundaram M, Merz JL, Gossard AC. Exciton-capture mechanism at impurities in GaAs/AlxGa(1−x)As quantum wells Surface Science. 305: 230-233. DOI: 10.1016/0039-6028(94)90890-7 |
0.466 |
|
| 1994 |
Garini Y, Ehrenfreund E, Cohen E, Ron A, Law K-, Merz JL, Gossard AC. Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy Solid-State Electronics. 37: 1199-1202. DOI: 10.1016/0038-1101(94)90388-3 |
0.366 |
|
| 1994 |
Zhang Y, Merz JL, Potemski M, Maan JC, Ploog K. Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells Solid-State Electronics. 37: 919-922. DOI: 10.1016/0038-1101(94)90326-3 |
0.425 |
|
| 1994 |
Yokogawa T, Floyd PD, Merz JL, Luo H, Furdyna JK. Optical confinement in ZnSe-based quantum well structure using impurity induced disordering Journal of Crystal Growth. 138: 564-569. DOI: 10.1016/0022-0248(94)90869-9 |
0.42 |
|
| 1994 |
Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Two electron transitions of the exciton bound at the Si donor confined in GaAs/Al x Ga 1−x As quantum wells Journal of Electronic Materials. 23: 513-518. DOI: 10.1007/Bf02670653 |
0.428 |
|
| 1994 |
Yokogawa T, Floyd PD, Hashemi MM, Merz JL. Impurity induced disordering of OMVPE-grown ZnSe/ZnS strained layer superlattices by germanium diffusion Journal of Electronic Materials. 23: 101-104. DOI: 10.1007/Bf02655254 |
0.342 |
|
| 1993 |
Garini Y, Ehrenfreund E, Cohen E, Ron A, Law K, Merz JL, Gossard AC. Optically induced intersubband absorption in the presence of a two-dimensional electron gas in quantum wells. Physical Review. B, Condensed Matter. 48: 4456-4459. PMID 10008921 DOI: 10.1103/Physrevb.48.4456 |
0.385 |
|
| 1993 |
Fafard S, Zhang YH, Merz JL. Miniband formation in asymmetric double-quantum-well superlattice structures. Physical Review. B, Condensed Matter. 48: 12308-12311. PMID 10007588 DOI: 10.1103/Physrevb.48.12308 |
0.451 |
|
| 1993 |
Fafard S, Fortin E, Merz JL. Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures. Physical Review. B, Condensed Matter. 48: 11062-11066. PMID 10007412 DOI: 10.1103/Physrevb.48.11062 |
0.406 |
|
| 1993 |
Holtz PO, Zhao QX, Ferreira AC, Monemar B, Sundaram M, Merz JL, Gossard AC. Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 48: 8872-8877. PMID 10007105 DOI: 10.1103/Physrevb.48.8872 |
0.396 |
|
| 1993 |
Weman H, Miller MS, Pryor CE, Li YJ, Bergman P, Petroff PM, Merz JL. Optical properties of quantum-wire arrays in (Al,Ga)As serpentine-superlattice structures. Physical Review. B, Condensed Matter. 48: 8047-8060. PMID 10006994 DOI: 10.1103/Physrevb.48.8047 |
0.491 |
|
| 1993 |
Holtz PO, Zhao QX, Monemar B, Sundaram M, Merz JL, Gossard AC. Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum well. Physical Review. B, Condensed Matter. 47: 15675-15678. PMID 10005960 |
0.329 |
|
| 1993 |
Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Excited 2s state of a donor confined in a GaAs/AlxGa1-xAs quantum well. Physical Review. B, Condensed Matter. 47: 10596-10600. PMID 10005173 |
0.307 |
|
| 1993 |
Holtz PO, Zhao QX, Monemar B, Sundaram M, Merz JL, Gossard AC. Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells Materials Science Forum. 657-662. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.657 |
0.445 |
|
| 1993 |
Bergman JP, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells Materials Science Forum. 629-634. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.629 |
0.438 |
|
| 1993 |
Monemar B, Holtz PO, Harris CI, Bergman JP, Kalt H, Sundaram M, Merz JL, Gossard AC, Köhler K, Schweizer T. Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells Materials Science Forum. 29-36. DOI: 10.4028/Www.Scientific.Net/Msf.117-118.29 |
0.45 |
|
| 1993 |
Harris CI, Monemar B, Holtz PO, Sundaram M, Merz JL, Gossard AC. Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells Materials Science Forum. 285-290. DOI: 10.4028/Www.Scientific.Net/Msf.117-118.285 |
0.405 |
|
| 1993 |
Harris C, Monemar B, Holtz PO, Sundaram M, Merz JL, Gossard AC. Investigation of Bi-Exciton Formation in Doped GaAsAlxGa(1-x)as Quantum Wells Mrs Proceedings. 326. DOI: 10.1557/Proc-326-507 |
0.445 |
|
| 1993 |
Yokogawa T, Ishikawa T, Merz JL, Taguchi T. Luminescence Study for Band Discontinuity in Free-Standing CdZnS/ZnS Strained Layer Multi-Quantum Wells Mrs Proceedings. 326. DOI: 10.1557/PROC-326-495 |
0.31 |
|
| 1993 |
Holtz PO, Zhao QX, Monemar B, Pasquarello A, Sundaram M, Merz JL, Gossard AC. Magnetooptical Studies of Acceptors Confined in GaAs/AIGaAs Quantum Wells Mrs Proceedings. 325. DOI: 10.1557/Proc-325-73 |
0.46 |
|
| 1993 |
Monemar B, Holtz PO, Bergman JP, Zhao QX, Harris CI, Ferreira AC, Sundaram M, Merz JL, Gossard AC. Optical Spectroscopy of Defects in GaAs/AlGaAs Multiple Quantum Wells. Mrs Proceedings. 325. DOI: 10.1557/Proc-325-19 |
0.459 |
|
| 1993 |
Ding YJ, Law K, Merz JL, Guo CL, Khurgin JB. Demonstration of strong saturation of traps in multiple, narrow, slightly asymmetric coupled quantum wells Journal of the Optical Society of America B. 10: 108. DOI: 10.1364/JOSAB.10.000108 |
0.302 |
|
| 1993 |
Świątek K, Weman H, Miller MS, Petroff PM, Merz JL. Optical Detection of Cyclotron Resonance in Serpentine Superlattice Quantum-Wire Arrays Acta Physica Polonica A. 84: 583-586. DOI: 10.12693/Aphyspola.84.583 |
0.47 |
|
| 1993 |
Yokogawa T, Floyd PD, Merz JL, Luo H, Furdyna JK. Disordering induced by impurity diffusion in ZnSe-based superlattices and optical waveguides fabricated by disordering Journal of Applied Physics. 74: 3840-3845. DOI: 10.1063/1.354478 |
0.371 |
|
| 1993 |
Chang Y, Tan I, Zhang Y, Bimberg D, Merz J, Hu E. Reduced quantum efficiency of a near‐surface quantum well Journal of Applied Physics. 74: 5144-5148. DOI: 10.1063/1.354276 |
0.44 |
|
| 1993 |
Chang Y, Tan I, Zhang Y, Merz J, Hu E, Frova A, Emiliani V. Luminescence efficiency of near‐surface quantum wells before and after ion‐gun hydrogenation Applied Physics Letters. 62: 2697-2699. DOI: 10.1063/1.109235 |
0.406 |
|
| 1993 |
Yokogawa T, Floyd PD, Hashemi MM, Merz JL, Luo H, Furdyna JK. Impurity induced disordering of CdZnSe/ZnSe strained layer superlattices by germanium diffusion Applied Physics Letters. 62: 3488-3490. DOI: 10.1063/1.109003 |
0.343 |
|
| 1993 |
Zou WX, Young DB, Law K-, Merz JL. Low‐threshold InGaAs/GaAs/AlGaAs quantum‐well laser with an intracavity optical modulator by impurity‐induced disordering Applied Physics Letters. 62: 556-558. DOI: 10.1063/1.108909 |
0.321 |
|
| 1993 |
Tan I, Chang Y, Mirin R, Hu E, Merz J, Yasuda T, Segawa Y. Observation of increased photoluminescence decay time in strain‐induced quantum‐well dots Applied Physics Letters. 62: 1376-1378. DOI: 10.1063/1.108684 |
0.416 |
|
| 1993 |
Holtz PO, Zhao QX, Monemar B, Harris C, Sundaram M, Merz JL, Gossard AC. The electronic structure of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells Journal De Physique Iv. 3: 311-314. DOI: 10.1051/Jp4:1993563 |
0.402 |
|
| 1993 |
Harris CI, Monemar B, Holtz PO, Kalt H, Sundaram M, Merz JL, Gossard AC. Temperature dependence of exciton-capture at impurities in GaAs/AlxGa(1-x) As quantum wells Journal De Physique Iv. 3: 171-174. DOI: 10.1051/Jp4:1993531 |
0.491 |
|
| 1993 |
WEMAN H, PRYOR CE, MILLER MS, MERZ JL. Observation of higher confined exciton states in serpentine superlattices by linear polarized excitation spectroscopy Le Journal De Physique Iv. 3: 143-146. DOI: 10.1051/Jp4:1993525 |
0.459 |
|
| 1993 |
Kalish R, Feldman LC, Jacobson DC, Weir BE, Merz JL, Kramer L-, Doughty K, Stone S, Lau K-. Implantation induced changes in quantum well structures Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 729-733. DOI: 10.1016/0168-583X(93)90670-2 |
0.375 |
|
| 1993 |
Lundström T, Holtz PO, Zhao QX, Bergman JP, Monemar B, Sundaram M, Merz JL, Gossard AC. Radiative recombination in modulation-doped GaAs/AlGaAs heterostructures in the presence of an electric field Journal of Electronic Materials. 22: 1353-1359. DOI: 10.1007/Bf02817699 |
0.384 |
|
| 1993 |
Weman H, Jones ED, McIntyre CR, Miller MS, Petroff PM, Merz JL. Magneto-luminescence study of quantum wire arrays in (Al,Ga)As serpentine superlattice structures Superlattices and Microstructures. 13: 5. DOI: 10.1006/Spmi.1993.1002 |
0.443 |
|
| 1992 |
Weman H, Miller MS, Merz JL. Comment on "Optical anisotropy in a quantum-well-wire array with two-dimensional quantum confinement" Physical Review Letters. 68: 3656. PMID 10045761 DOI: 10.1103/Physrevlett.68.3656 |
0.449 |
|
| 1992 |
Weman H, Treacy GM, Hjalmarson HP, Law KK, Merz JL, Gossard AC. Impact ionization of excitons and donors in AlxGa1-xAs/(n-type GaAs):Si quantum wells. Physical Review. B, Condensed Matter. 45: 6263-6266. PMID 10000375 DOI: 10.1103/Physrevb.45.6263 |
0.441 |
|
| 1992 |
Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC, Harris CI, Kalt H. Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level Materials Science Forum. 1375-1380. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.1375 |
0.463 |
|
| 1992 |
Harris CI, Kalt H, Monemar B, Holtz PO, Bergman JP, Sundaram M, Merz JL, Gossard AC. Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells Materials Science Forum. 1363-1368. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.1363 |
0.456 |
|
| 1992 |
Tan I, Stone SS, Prater C, Mirin R, Hu E, Bowers J, Merz J, Hansma P. tudy of the Surface Cleaning Effects to the InGaAs Quantum Well Wires by Atomic Force Microscopy and Photoluminescence Spectroscopy Mrs Proceedings. 259. DOI: 10.1557/Proc-259-317 |
0.366 |
|
| 1992 |
Wassermeier M, Weman H, Miller ML, Petroff PM, Merz JL. Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup Semiconductors. 1678: 69-80. DOI: 10.1117/12.60442 |
0.357 |
|
| 1992 |
Weman H, Miller ML, Pryor CE, Petroff PM, Kroemer H, Merz JL. Luminescence polarization anisotropy in (Al,Ga)As serpentine quantum wire arrays Semiconductors. 1675: 120-127. DOI: 10.1117/12.137586 |
0.454 |
|
| 1992 |
Tan I, Yasuda T, Mirin R, Lishan D, Hu E, Bowers J, Merz J, He MY, Evans A. Optical study of strained quantum well wires Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 664-668. DOI: 10.1116/1.577706 |
0.464 |
|
| 1992 |
Weman H, Treacy GM, Hjalmarson HP, Law KK, Bergman JP, Merz JL, Gossard AC. Impact ionization of free and bound excitons in AlGaAs/GaAs quantum wells Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/135 |
0.465 |
|
| 1992 |
Chen WM, Monemar B, Sorman E, Holtz PO, Sundaram M, Merz JL, Gossard AC. Effects of a hot two-dimensional electron gas on optical properties of modulation-doped GaAs/AlGaAs heterostructures Semiconductor Science and Technology. 7: B253-B255. DOI: 10.1088/0268-1242/7/3B/061 |
0.412 |
|
| 1992 |
Wassermeier M, Weman H, Miller MS, Petroff PM, Merz JL. Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique Journal of Applied Physics. 71: 2397-2402. DOI: 10.1063/1.351096 |
0.376 |
|
| 1992 |
Kalish R, Kramer L‐, Law K‐, Merz JL, Feldman LC, Jacobson DC, Weir BE. Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks Applied Physics Letters. 61: 2589-2591. DOI: 10.1063/1.108136 |
0.422 |
|
| 1992 |
Glaeser AS, Merz JL, Nahory RE, Tamargo MC. Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy Applied Physics Letters. 60: 1345-1347. DOI: 10.1063/1.107338 |
0.345 |
|
| 1992 |
Chalmers SA, Weman H, Yi JC, Kroemer H, Merz JL, Dagli N. Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices Applied Physics Letters. 60: 1676-1678. DOI: 10.1063/1.107234 |
0.416 |
|
| 1992 |
Ding YJ, Guo CL, Li S, Khurgin JB, Law K, Merz JL. Continuous‐wave photoluminescence excitation spectra of multiple narrow‐stepped quantum wells: Evidence for saturation of interface traps Applied Physics Letters. 60: 154-156. DOI: 10.1063/1.107000 |
0.345 |
|
| 1992 |
Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. The shallow Si donor confined in a {GaAs}/{AlGaAs} quantum well Superlattices and Microstructures. 12: 133-135. DOI: 10.1016/0749-6036(92)90235-W |
0.414 |
|
| 1992 |
Garini Y, Cohen E, Ehrenfreund E, Ron A, Law KK, Merz JL, Gossard AC. Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells Surface Science. 263: 561-564. DOI: 10.1016/0039-6028(92)90409-Y |
0.461 |
|
| 1992 |
Monemar B, Holtz PO, Bergman P, Harris CI, Kalt H, Sundaram M, Merz JL, Gossard AC. Effects of localization on optical spectra for shallow acceptors in center-doped GaAs/AlGaAs multiple quantum wells Surface Science. 263: 556-560. DOI: 10.1016/0039-6028(92)90408-X |
0.439 |
|
| 1992 |
Garini Y, Cohen E, Ron A, Ehrenfreund E, Law K-, Merz JL, Gossard AC. Photoinduced intersubband absorption in n-doped quantum wells Journal of Luminescence. 53: 288-292. DOI: 10.1016/0022-2313(92)90158-6 |
0.39 |
|
| 1991 |
Zhao QX, Fu Y, Holtz PO, Monemar B, Bergman JP, Chao KA, Sundaram M, Merz JL, Gossard AC. Energy-level structure of two-dimensional electrons confined at the AlxGa1-xAs/GaAs interface studied by photoluminescence excitation spectroscopy. Physical Review. B, Condensed Matter. 43: 5035-5038. PMID 9997880 DOI: 10.1103/Physrevb.43.5035 |
0.384 |
|
| 1991 |
Bergman JP, Zhao QX, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Time-resolved measurements of the radiative recombination in GaAs/AlxGa1-xAs heterostructures. Physical Review. B, Condensed Matter. 43: 4771-4776. PMID 9997846 DOI: 10.1103/Physrevb.43.4771 |
0.401 |
|
| 1991 |
Bergman JP, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Decay measurements of free- and bound-exciton recombination in doped GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 43: 4765-4770. PMID 9997845 DOI: 10.1103/Physrevb.43.4765 |
0.319 |
|
| 1991 |
Law K, Whitehead M, Merz JL, Coldren LA. High Performance Quantum Well Asymmetric Fabry-Perot Reflection Modulators: Effect of Layer Thickness Variations Mrs Proceedings. 240. DOI: 10.1557/Proc-240-609 |
0.435 |
|
| 1991 |
Petroff PM, Krishnamurthy M, Wassermeier M, Miller M, Weman H, Kroemer H, Merz J. Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces. Mrs Proceedings. 237. DOI: 10.1557/Proc-237-467 |
0.421 |
|
| 1991 |
Zou WX, Merz JL, Fu RJ, Hong CS. Very-low-threshold, strained In/sub y/Ga/sub 1-y/As-GaAs quantum-well lasers defined by impurity-induced disordering Ieee Photonics Technology Letters. 3: 400-402. DOI: 10.1109/68.93858 |
0.38 |
|
| 1991 |
Chao CP, Hu SY, Floyd P, Law KK, Corzine SW, Merz JL, Gossard AC, Coldren LA. Fabrication of Low-Threshold InGaAs/GaAs Ridge Waveguide Lasers by Using In Situ Monitored Reactive Ion Etching Ieee Photonics Technology Letters. 3: 585-587. DOI: 10.1109/68.87921 |
0.352 |
|
| 1991 |
Wada H, Miller BI, Babic DI, Koren U, Crawford DL, Young MG, Dudley JJ, Bowers JE, Hu EL, Merz JL. IIIA-8 (post deadline) High-Temperature Pulsed Operation of InGaAsP/InP Surface Emitting Lasers Ieee Transactions On Electron Devices. 38: 2701. DOI: 10.1109/16.158721 |
0.312 |
|
| 1991 |
Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Spectroscopic Studies of the Effect of Confinement on Defect States in GaAs/AlGaAs Quantum Wells Physica Scripta. 1991: 188-195. DOI: 10.1088/0031-8949/1991/T39/029 |
0.429 |
|
| 1991 |
Chao CP, Hu SY, Law K, Young B, Merz JL, Gossard AC. Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure Journal of Applied Physics. 69: 7892-7894. DOI: 10.1063/1.347473 |
0.303 |
|
| 1991 |
Chao C, Law K, Merz JL. Low‐threshold InGaAs/GaAs strained‐layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrors Applied Physics Letters. 59: 1532-1534. DOI: 10.1063/1.106273 |
0.355 |
|
| 1991 |
Law K, Whitehead M, Merz J, Coldren L. Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulator Electronics Letters. 27: 1863. DOI: 10.1049/El:19911157 |
0.379 |
|
| 1991 |
Zou WX, Merz JL, Fu RJ, Hong CS. Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering Electronics Letters. 27: 1241-1243. DOI: 10.1049/El:19910778 |
0.367 |
|
| 1991 |
Law K, Yan R, Coldren L, Merz J. Measurement of field-induced refractive index variation in GaAs/AlGaAs superlattice using monolithic Fabry–Perot etalon Electronics Letters. 27: 105. DOI: 10.1049/El:19910070 |
0.394 |
|
| 1991 |
Merz J, Petroff P. Making quantum wires and boxes for optoelectronic devices Materials Science and Engineering: B. 9: 275-284. DOI: 10.1016/0921-5107(91)90186-Y |
0.33 |
|
| 1991 |
Zhao QX, Bergman JP, Holtz PO, Monemar B, Ensslin K, Sundaram M, Merz JL, Gossard AC. Spectroscopic study of radiative recombinations in GaAs/AlGaAs heterostructures Superlattices and Microstructures. 9: 161-164. DOI: 10.1016/0749-6036(91)90274-U |
0.357 |
|
| 1991 |
Holtz PO, Hjalmarson HP, Sundaram M, Merz JL, Gossard AC. Intrinsic two-hole transitions demonstrating the localization effects due to interface roughness Superlattices and Microstructures. 9: 407-410. DOI: 10.1016/0749-6036(91)90268-V |
0.348 |
|
| 1991 |
Monemar B, Kalt H, Harris C, Bergman JP, Holtz PO, Sundaram M, Merz JL, Gossard AC, Köhler K, Schweizer T. Dynamics of free and bound excitons in center-doped GaAs/AsGaAs quantum wells Superlattices and Microstructures. 9: 281-284. DOI: 10.1016/0749-6036(91)90243-K |
0.392 |
|
| 1990 |
Holtz PO, Sundaram M, Merz JL, Gossard AC. Enhancement of the free-to-bound transition in narrow GaAs/Al0.3Ga0.7As quantum wells via a possible excitonic Auger mechanism. Physical Review. B, Condensed Matter. 41: 1489-1496. PMID 9993865 DOI: 10.1103/Physrevb.41.1489 |
0.32 |
|
| 1990 |
Zhao QX, Berman JP, Holtz PO, Monemar B, Hallin C, Sundaram M, Merz JL, Gossard AC. Radiative recombination in doped AlGaAs/GaAs heterostructures Semiconductor Science and Technology. 5: 884-889. DOI: 10.1088/0268-1242/5/8/014 |
0.376 |
|
| 1990 |
Doughty KL, Simes RJ, Gossard AC, Maserjian J, Merz JL. A tunable quantum well infrared detector based on photon-assisted resonant tunnelling Semiconductor Science and Technology. 5: 494-497. DOI: 10.1088/0268-1242/5/6/004 |
0.429 |
|
| 1990 |
Holtz PO, Doughty K, Sundaram M, Merz JL, Gossard AC. The effects of confinement on the Be-acceptor in narrow GaAs/AlGaAs quantum wells Semiconductor Science and Technology. 5: 218-221. DOI: 10.1088/0268-1242/5/3/006 |
0.426 |
|
| 1990 |
Law K, Yan RH, Gossard AC, Merz JL. Electric‐field‐induced absorption changes in triangular quantum wells grown by pulsed‐beam molecular‐beam‐epitaxy technique Journal of Applied Physics. 67: 6461-6465. DOI: 10.1063/1.345120 |
0.314 |
|
| 1990 |
Zou WX, Law K, Gossard AC, Hu EL, Coldren LA, Merz JL. Low‐threshold high‐efficiency high‐yield impurity‐induced layer disordering laser by self‐aligned Si‐Zn diffusion Applied Physics Letters. 57: 2534-2536. DOI: 10.1063/1.103847 |
0.324 |
|
| 1990 |
Laruelle F, Bagchi A, Tsuchiya M, Merz J, Petroff PM. Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures Applied Physics Letters. 56: 1561-1563. DOI: 10.1063/1.103153 |
0.308 |
|
| 1990 |
Takamori T, Coldren LA, Merz JL. Lasing characteristics of a continuous‐wave operated folded‐cavity surface‐emitting laser Applied Physics Letters. 56: 2267-2269. DOI: 10.1063/1.102935 |
0.367 |
|
| 1990 |
Petroff PM, Ensslin K, Miller M, Chalmers S, Weman H, Merz J, Kroemer H, Gossard AC. Novel approaches in 2 and 3 dimensional confinement structures : processing and properties Superlattices and Microstructures. 8: 35-39. DOI: 10.1016/0749-6036(90)90271-8 |
0.424 |
|
| 1990 |
Garini Y, Olszakier M, Cohen E, Ehrenfreund E, Ron A, Law K, Merz J, Gossard A. Photoinduced intersubband absorption in barrier doped multi-quantum-wells Superlattices and Microstructures. 7: 287-290. DOI: 10.1016/0749-6036(90)90211-O |
0.401 |
|
| 1990 |
Rune GC, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Spatially selective excitation of shallow acceptors in GaAs/AlxGa1−xAs quantum wells Superlattices and Microstructures. 7: 81-87. DOI: 10.1016/0749-6036(90)90119-R |
0.392 |
|
| 1990 |
Holtz PO, Sundaram M, Merz JL, Gossard AC. A photoconductivity study of the excitons in doped and undoped {GaAs}/{AlGaAs} quantum wells Superlattices and Microstructures. 7: 57-61. DOI: 10.1016/0749-6036(90)90115-N |
0.439 |
|
| 1990 |
Chen WM, Monemar B, Zhao QX, Holtz PO, Sundaram M, Merz JL, Gossard AC. Characterization of GaAs/AlGaAs heterojunctions by optical detection of cyclotron resonance Surface Science. 229: 484-487. DOI: 10.1016/0039-6028(90)90936-3 |
0.42 |
|
| 1990 |
Laruelle F, Hu Y, Simes R, Robinson W, Merz J, Petroff P. Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation Surface Science. 228: 306-309. DOI: 10.1016/0039-6028(90)90315-Y |
0.396 |
|
| 1989 |
Maserjian J, Andersson PO, Hancock BR, Lannelli JM, Eng ST, Grunthaner FJ, Law KK, Holtz PO, Simes RJ, Coldren LA, Gossard AC, Merz JL. Optically addressed spatial light modulators by MBE-grown nipi MQW structures. Applied Optics. 28: 4801-7. PMID 20555953 DOI: 10.1364/Ao.28.004801 |
0.412 |
|
| 1989 |
Law KK, Maserjian J, Simes RJ, Coldren LA, Gossard AC, Merz JL. Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures. Optics Letters. 14: 230-2. PMID 19749879 DOI: 10.1364/Ol.14.000230 |
0.436 |
|
| 1989 |
Holtz PO, Sundaram M, Doughty K, Merz JL, Gossard AC. Spectroscopic study of the effect of confinement on shallow acceptor states in GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 40: 12338-12345. PMID 9991866 |
0.336 |
|
| 1989 |
Holtz PO, Sundaram M, Merz JL, Gossard AC. Observation of the acceptor-bound exciton confined in narrow GaAs/AlxGa1-xAs quantum wells in photoluminescence excitation. Physical Review. B, Condensed Matter. 40: 10021-10024. PMID 9991543 |
0.381 |
|
| 1989 |
Holtz PO, Sundaram M, Simes R, Merz JL, Gossard AC, English JH. Spectroscopic study of an acceptor confined in a narrow GaAs/AlxGa1-xAs quantum well. Physical Review. B, Condensed Matter. 39: 13293-13301. PMID 9948230 DOI: 10.1103/Physrevb.39.13293 |
0.469 |
|
| 1989 |
Okada Y, Tada K, Simes RJ, Coldren LA, Merz JL. GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1989.S-C-6 |
0.352 |
|
| 1989 |
Holtzv PO, Sundaram M, Rune GC, Monemar B, Merz JL, Gossard AC. Effects of Confinement on the Optical Properties of a Shallow Acceptor and its Bound Exciton in Narrow GaAs/AIGaAs Quantum Wells Mrs Proceedings. 163. DOI: 10.1557/Proc-163-331 |
0.433 |
|
| 1989 |
Bergman JP, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells Mrs Proceedings. 163. DOI: 10.1557/Proc-163-325 |
0.462 |
|
| 1989 |
Chen WM, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC. Hot-Carrier Effects on Optical Properties of GaAs/Al x Gai 1-x As Quantum Wells Mrs Proceedings. 160: 707. DOI: 10.1557/Proc-160-707 |
0.472 |
|
| 1989 |
Bergman JP, Zhao QX, Holtz P-, Monemar B, Sundaram M, Merz JL, Gossard AC. Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures Mrs Proceedings. 160: 703. DOI: 10.1557/Proc-160-703 |
0.334 |
|
| 1989 |
Vawter G, Merz J, Coldren L. Monolithically integrated transverse-junction-stripe laser with an external waveguide in GaAs/AlGaAs Ieee Journal of Quantum Electronics. 25: 154-162. DOI: 10.1109/3.16258 |
0.311 |
|
| 1989 |
Takamori T, Coldren LA, Merz JL. Folded‐cavity transverse junction stripe surface‐emitting laser Applied Physics Letters. 55: 1053-1055. DOI: 10.1063/1.101702 |
0.312 |
|
| 1988 |
Petroff PM, Qian X, Holtz PO, Simes RJ, English JH, Merz J, Kubena R. Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures Mrs Proceedings. 126. DOI: 10.1557/Proc-126-55 |
0.376 |
|
| 1987 |
Bahir G, Merz JL, Abelson JR, Sigmon TW. Rapid thermal alloyed ohmic contact on inp Journal of Electronic Materials. 16: 257-262. DOI: 10.1007/Bf02653363 |
0.303 |
|
| 1986 |
Subbanna S, Kroemer H, Merz JL. Summary Abstract: Growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation Journal of Vacuum Science & Technology B. 4: 515-516. DOI: 10.1116/1.583412 |
0.33 |
|
| 1986 |
Hong JM, Wang S, Sands T, Washburn J, Flood JD, Merz JL, Low T. Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Applied Physics Letters. 48: 142-144. DOI: 10.1063/1.96977 |
0.331 |
|
| 1986 |
Wu XS, Omura E, Huang TC, Coldren LA, Merz JL. Sputtered silicon as a new etching mask for GaAs devices Journal of Applied Physics. 60: 1218-1220. DOI: 10.1063/1.337370 |
0.315 |
|
| 1986 |
Subbanna S, Kroemer H, Merz JL. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation Journal of Applied Physics. 59: 488-494. DOI: 10.1063/1.336658 |
0.337 |
|
| 1985 |
Vawter GA, Merz JL. Design and fabrication of AlGaAs/GaAs phase couplers for optical integrated-circuit applications Fiber and Integrated Optics. 5: 291-305. DOI: 10.1080/01468038508242757 |
0.322 |
|
| 1985 |
Yuan YR, Pudensi MAA, Vawter GA, Merz JL. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface Journal of Applied Physics. 58: 397-403. DOI: 10.1063/1.335692 |
0.42 |
|
| 1985 |
Pudensi MAA, Mohammed K, Merz JL, Kasemset D, Hess KL. Effects of growth temperature on optical and deep level spectroscopy of high-quality InP grown by metalorganic chemical vapor deposition Journal of Applied Physics. 57: 2788-2792. DOI: 10.1063/1.335423 |
0.363 |
|
| 1985 |
Yuan YR, Mohammed K, Merz JL. Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid‐phase epitaxy Journal of Applied Physics. 57: 2896-2899. DOI: 10.1063/1.335227 |
0.392 |
|
| 1985 |
Kirillov D, Merz JL, Kalish R, Shatas S. Luminescence study of rapid lamp annealing of Si‐implanted InP Journal of Applied Physics. 57: 531-536. DOI: 10.1063/1.334787 |
0.307 |
|
| 1984 |
Yuan YR, Mohammed K, Pudensi MAA, Merz JL. Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions Applied Physics Letters. 45: 739-741. DOI: 10.1063/1.95381 |
0.417 |
|
| 1984 |
Caine EJ, Subbanna S, Kroemer H, Merz JL, Cho AY. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification Applied Physics Letters. 45: 1123-1125. DOI: 10.1063/1.95040 |
0.378 |
|
| 1984 |
Kirillov D, Merz JL, Kalish R, Ron A. Band‐to‐band luminescence of ion‐implanted InP after rapid lamp annealing Applied Physics Letters. 44: 609-610. DOI: 10.1063/1.94850 |
0.332 |
|
| 1984 |
Kasemset D, Hess KL, Mohammed K, Merz JL. The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition Journal of Electronic Materials. 13: 655-671. DOI: 10.1007/Bf02653987 |
0.348 |
|
| 1983 |
Griffiths G, Mohammed K, Subbana S, Kroemer H, Merz JL. GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence Applied Physics Letters. 43: 1059-1061. DOI: 10.1063/1.94235 |
0.46 |
|
| 1983 |
Mohammed K, Merz JL, Kasemset D. Effect of V/III variation on the optical properties of GaAs and AlxGa1−xAs grown by metalorganic chemical vapor deposition Applied Physics Letters. 43: 103-105. DOI: 10.1063/1.94144 |
0.345 |
|
| 1983 |
Mohammed K, Merz JL, Kasemset D. Effect of growth temperature on the photoluminescent spectra of undoped AlGaAs grown by metalorganic-chemical vapor deposition Materials Letters. 2: 35-38. DOI: 10.1016/0167-577X(83)90027-7 |
0.378 |
|
| 1982 |
Kirillov D, Merz JL. Raman Scattering as a Temperature Frobe for Laser Heating of Si Mrs Proceedings. 17: 95. DOI: 10.1557/Proc-17-95 |
0.305 |
|
| 1977 |
Merz JL, Logan RA, McBride PL, Sergent AM. GaAs double‐heterostructure photodetectors Journal of Applied Physics. 48: 3580-3587. DOI: 10.1063/1.324158 |
0.308 |
|
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