| Year |
Citation |
Score |
| 2020 |
Sun B, Xu X, Zhou G, Tao L, Wang X, Chen Z, Xu J. Observation of Strong J-Aggregate Light Emission in Monolayer Molecular Crystal on Hexagonal Boron Nitride. The Journal of Physical Chemistry. A. PMID 32786963 DOI: 10.1021/Acs.Jpca.0C03709 |
0.344 |
|
| 2020 |
Xu J, Liang L, Mai CL, Zhang Z, Zhou Q, Xiong Q, Zhang Z, Deng L, Gao P. Lewis-base containing spiro type hole transporting materials for high-performance perovskite solar cells with efficiency approaching 20. Nanoscale. 12: 13157-13164. PMID 32584356 DOI: 10.1039/D0Nr01961E |
0.338 |
|
| 2020 |
Xi X, Chen Z, Xu JB, Sun X. Graphene-assisted electro-optomechanical integration on a silicon-on-insulator platform. Optics Express. 28: 14386-14395. PMID 32403479 DOI: 10.1364/Oe.382770 |
0.304 |
|
| 2020 |
Wang Y, Yu Z, Tong Y, Sun B, Zhang Z, Xu J, Sun X, Tsang HK. High-speed infrared two-dimensional platinum diselenide photodetectors Applied Physics Letters. 116: 211101. DOI: 10.1063/5.0010034 |
0.36 |
|
| 2020 |
Zhou S, Zhou G, Li Y, Xu X, Hsu Y, Xu J, Zhao N, Lu X. Understanding Charge Transport in All-Inorganic Halide Perovskite Nanocrystal Thin-Film Field Effect Transistors Acs Energy Letters. 5: 2614-2623. DOI: 10.1021/Acsenergylett.0C01295 |
0.311 |
|
| 2020 |
Tong L, Peng M, Wu P, Huang X, Li Z, Peng Z, Lin R, Sun Q, Shen Y, Zhu X, Wang P, Xu J, Ye L. Hole-dominated Fowler–Nordheim tunneling in 2D assembly for infrared imaging Chinese Science Bulletin. DOI: 10.1016/J.Scib.2020.07.037 |
0.301 |
|
| 2020 |
Zhang T, Long M, Pan L, Ngai K, Qin M, Xie F, Lu X, Chen J, Xu J. Green perovskite light-emitting diodes with simultaneous high luminance and quantum efficiency through charge injection engineering Chinese Science Bulletin. DOI: 10.1016/J.Scib.2020.06.024 |
0.304 |
|
| 2020 |
Xie J, Yan K, Zhu H, Li G, Wang H, Zhu H, Hang P, Zhao S, Guo W, Ye D, Shao L, Guan X, Ngai T, Yu X, Xu J. Identifying the functional groups effect on passivating perovskite solar cells Chinese Science Bulletin. 65: 1726-1734. DOI: 10.1016/J.Scib.2020.05.031 |
0.309 |
|
| 2019 |
Yao Y, Ye Z, Huang F, Zeng X, Zhang T, Shang T, Han M, Zhang W, Ren L, Sun R, Xu J, Wong C. Achieving Significant Thermal Conductivity Enhancement via an Ice-templated and Sintered BN-SiC Skeleton. Acs Applied Materials & Interfaces. PMID 31860260 DOI: 10.1021/Acsami.9B19280 |
0.32 |
|
| 2019 |
Zhao H, Zhao Y, Song Y, Zhou M, Lv W, Tao L, Feng Y, Song B, Ma Y, Zhang J, Xiao J, Wang Y, Lien DH, Amani M, Kim H, ... ... Xu JB, et al. Strong optical response and light emission from a monolayer molecular crystal. Nature Communications. 10: 5589. PMID 31811122 DOI: 10.1038/S41467-019-13581-9 |
0.303 |
|
| 2019 |
Zeng X, Ren L, Xie J, Mao D, Wang M, Zeng X, Du G, Sun R, Xu J, Wong C. Room-Temperature Welding of Silver Telluride Nanowires for High-Performance Thermoelectric Film. Acs Applied Materials & Interfaces. PMID 31560511 DOI: 10.1021/Acsami.9B14854 |
0.36 |
|
| 2019 |
Wang M, Zhang T, Mao D, Yao Y, Zeng X, Ren L, Cai Q, Mateti S, Li LH, Zeng X, Du G, Sun R, Chen Y, Xu J, Wong C. Highly Compressive Boron Nitride Nanotube Aerogels Reinforced with Reduced Graphene Oxide. Acs Nano. PMID 31203604 DOI: 10.1021/Acsnano.9B03225 |
0.322 |
|
| 2019 |
He R, Chen Z, Lai H, Zhang T, Wen J, Chen H, Xie F, Yue S, Liu P, Chen J, Xie W, Wang X, Xu J. Van der Waals transition metal oxide for vis-MIR broadband photodetection via intercalation strategy. Acs Applied Materials & Interfaces. PMID 30920195 DOI: 10.1021/Acsami.9B00181 |
0.326 |
|
| 2019 |
Dai W, Lv L, Lu J, Hou H, Yan Q, Alam FE, Li Y, Zeng X, Yu J, Wei Q, Xu X, Wu J, Jiang N, Du S, Sun R, ... Xu J, et al. A Paper-Like Inorganic Thermal Interface Material Composed of Hierarchically Structured Graphene/Silicon Carbide Nanorods. Acs Nano. PMID 30726676 DOI: 10.1021/Acsnano.8B07337 |
0.335 |
|
| 2019 |
Ma J, Qin M, Li Y, Zhang T, Xu J, Fang G, Lu X. Guanidinium doping enabled low-temperature fabrication of high-efficiency all-inorganic CsPbI2Br perovskite solar cells Journal of Materials Chemistry A. 7: 27640-27647. DOI: 10.1039/C9Ta10899H |
0.323 |
|
| 2019 |
Long M, Zhang T, Chen D, Qin M, Chen Z, Gong L, Lu X, Xie F, Xie W, Chen J, Xu J. Interlayer Interaction Enhancement in Ruddlesden–Popper Perovskite Solar Cells toward High Efficiency and Phase Stability Acs Energy Letters. 4: 1025-1033. DOI: 10.1021/Acsenergylett.9B00351 |
0.331 |
|
| 2019 |
Zhou S, Ma Y, Zhou G, Xu X, Qin M, Li Y, Hsu Y, Hu H, Li G, Zhao N, Xu J, Lu X. Ag-Doped Halide Perovskite Nanocrystals for Tunable Band Structure and Efficient Charge Transport Acs Energy Letters. 4: 534-541. DOI: 10.1021/Acsenergylett.8B02478 |
0.333 |
|
| 2019 |
Xu X, Chen Z, Sun B, Zhao Y, Tao L, Xu J. Efficient passivation of monolayer MoS2 by epitaxially grown 2D organic crystals Chinese Science Bulletin. 64: 1700-1706. DOI: 10.1016/J.Scib.2019.09.009 |
0.33 |
|
| 2019 |
Li H, Li X, Park J, Tao L, Kim KK, Lee YH, Xu J. Restoring the photovoltaic effect in graphene-based van der Waals heterojunctions towards self-powered high-detectivity photodetectors Nano Energy. 57: 214-221. DOI: 10.1016/J.Nanoen.2018.12.004 |
0.308 |
|
| 2019 |
Mao D, Chen J, Ren L, Zhang K, Yuen MM, Zeng X, Sun R, Xu J, Wong C. Spherical core-shell Al@Al2O3 filled epoxy resin composites as high-performance thermal interface materials Composites Part a: Applied Science and Manufacturing. 123: 260-269. DOI: 10.1016/J.Compositesa.2019.05.024 |
0.302 |
|
| 2018 |
Xu J, Sun Q, Wu Z, Guo L, Xie S, Huang Q, Peng Q. Development of broad-band high-reflectivity multilayer film for positron emission tomography system. Journal of Instrumentation : An Iop and Sissa Journal. 13. PMID 33828611 DOI: 10.1088/1748-0221/13/09/P09016 |
0.363 |
|
| 2018 |
Wang H, Cheng G, Xie J, Zhao S, Qin M, Chan CCS, Qiu Y, Chen G, Duan C, Wong KS, Wang J, Lu X, Xu J, Yan K. Bulk Heterojunction Quasi-Two-Dimensional Perovskite Solar Cell with 1.18 V High Photovoltage. Acs Applied Materials & Interfaces. PMID 30585488 DOI: 10.1021/Acsami.8B17030 |
0.321 |
|
| 2018 |
Zhao S, Xie J, Cheng G, Xiang Y, Zhu H, Guo W, Wang H, Qin M, Lu X, Qu J, Wang J, Xu J, Yan K. General Nondestructive Passivation by 4-Fluoroaniline for Perovskite Solar Cells with Improved Performance and Stability. Small (Weinheim An Der Bergstrasse, Germany). e1803350. PMID 30417558 DOI: 10.1002/Smll.201803350 |
0.361 |
|
| 2018 |
Long M, Zhang T, Liu M, Chen Z, Wang C, Xie W, Xie F, Chen J, Li G, Xu J. Abnormal Synergetic Effect of Organic and Halide Ions on the Stability and Optoelectronic Properties of a Mixed Perovskite via In Situ Characterizations. Advanced Materials (Deerfield Beach, Fla.). e1801562. PMID 29797364 DOI: 10.1002/Adma.201801562 |
0.322 |
|
| 2018 |
Zheng Z, Chen J, Wang Y, Wang X, Chen X, Liu P, Xu J, Xie W, Chen H, Deng S, Xu N. Highly Confined and Tunable Hyperbolic Phonon Polaritons in Van Der Waals Semiconducting Transition Metal Oxides. Advanced Materials (Deerfield Beach, Fla.). PMID 29469218 DOI: 10.1002/Adma.201705318 |
0.313 |
|
| 2018 |
Yao Y, Sun J, Zeng X, Sun R, Xu JB, Wong CP. Construction of 3D Skeleton for Polymer Composites Achieving a High Thermal Conductivity. Small (Weinheim An Der Bergstrasse, Germany). PMID 29392850 DOI: 10.1002/Smll.201704044 |
0.314 |
|
| 2018 |
Tao L, Li H, Sun M, Xie D, Li X, Xu J. Enhanced Photoresponse in Interfacial Gated Graphene Phototransistor With Ultrathin Al2O3 Dielectric Ieee Electron Device Letters. 39: 987-990. DOI: 10.1109/Led.2018.2843804 |
0.329 |
|
| 2018 |
Lu J, Wei A, Zhao Y, Tao L, Yang Y, Zheng Z, Wang H, Luo D, Liu J, Tao L, Li H, Li J, Xu J. Graphene/In2S3 van der Waals Heterostructure for Ultrasensitive Photodetection Acs Photonics. 5: 4912-4919. DOI: 10.1021/Acsphotonics.8B01070 |
0.33 |
|
| 2017 |
He D, Qiao J, Zhang L, Wang J, Lan T, Qian J, Li Y, Shi Y, Chai Y, Lan W, Ono LK, Qi Y, Xu JB, Ji W, Wang X. Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride. Science Advances. 3: e1701186. PMID 28913429 DOI: 10.1126/Sciadv.1701186 |
0.366 |
|
| 2017 |
Pan G, Yao Y, Zeng X, Sun J, Hu J, Sun R, Xu JB, Wong CP. Learning from Natural Nacre: Constructing Layered Polymer Composites with High Thermal Conductivity. Acs Applied Materials & Interfaces. PMID 28871780 DOI: 10.1021/Acsami.7B10115 |
0.308 |
|
| 2017 |
Chen K, Chen Z, Wan X, Zheng Z, Xie F, Chen W, Gui X, Chen H, Xie W, Xu J. A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties. Advanced Materials (Deerfield Beach, Fla.). PMID 28833622 DOI: 10.1002/Adma.201700704 |
0.321 |
|
| 2017 |
Zhao G, Li X, Huang M, Zhen Z, Zhong Y, Chen Q, Zhao X, He Y, Hu R, Yang T, Zhang R, Li C, Kong J, Xu JB, Ruoff RS, et al. The physics and chemistry of graphene-on-surfaces. Chemical Society Reviews. PMID 28678225 DOI: 10.1039/C7Cs00256D |
0.333 |
|
| 2017 |
Zeng X, Sun J, Yao Y, Sun R, Xu JB, Wong CP. A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of A Nanocomposite with High Thermal Conductivity. Acs Nano. PMID 28402626 DOI: 10.1021/Acsnano.7B02359 |
0.316 |
|
| 2017 |
Tao L, Chen K, Chen Z, Chen W, Gui X, Chen H, Li X, Xu J. Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries. Acs Applied Materials & Interfaces. PMID 28297598 DOI: 10.1021/Acsami.7B00420 |
0.386 |
|
| 2017 |
Wang Y, Du X, Wang J, Su M, Wan X, Meng H, Xie W, Xu JB, Liu P. Growth of large scale, large size, few layered α-MoO3 on SiO2 and its photoresponse mechanism. Acs Applied Materials & Interfaces. PMID 28116901 DOI: 10.1021/Acsami.6B13743 |
0.362 |
|
| 2017 |
Li X, Tao L, Chen Z, Fang H, Li X, Wang X, Xu J, Zhu H. Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics Applied Physics Reviews. 4: 21306. DOI: 10.1063/1.4983646 |
0.306 |
|
| 2017 |
Tao L, Chen Z, Li X, Yan K, Xu J. Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity Npj 2d Materials and Applications. 1. DOI: 10.1038/S41699-017-0016-4 |
0.335 |
|
| 2017 |
Sun H, Li X, Li Y, Chen G, Liu Z, Alam FE, Dai D, Li L, Tao L, Xu J, Fang Y, Li X, Zhao P, Jiang N, Chen D, et al. High-Quality Monolithic Graphene Films via Laterally Stitched Growth and Structural Repair of Isolated Flakes for Transparent Electronics Chemistry of Materials. 29: 7808-7815. DOI: 10.1021/Acs.Chemmater.7B02348 |
0.324 |
|
| 2017 |
Long M, Zhang T, Zhu H, Li G, Wang F, Guo W, Chai Y, Chen W, Li Q, Wong KS, Xu J, Yan K. Textured CH3NH3PbI3 thin film with enhanced stability for high performance perovskite solar cells Nano Energy. 33: 485-496. DOI: 10.1016/J.Nanoen.2017.02.002 |
0.34 |
|
| 2017 |
Yan K, Qiu Y, Xiao S, Gong J, Zhao S, Xu J, Meng X, Yang S, Xu J. Self-driven hematite-based photoelectrochemical water splitting cells with three-dimensional nanobowl heterojunction and high-photovoltage perovskite solar cells Materials Today Energy. 6: 128-135. DOI: 10.1016/J.Mtener.2017.09.006 |
0.304 |
|
| 2017 |
Xu W, Long M, Zhang T, Liang L, Cao H, Zhu D, Xu J. Fully solution-processed metal oxide thin-film transistors via a low-temperature aqueous route Ceramics International. 43: 6130-6137. DOI: 10.1016/J.Ceramint.2017.02.007 |
0.352 |
|
| 2017 |
Zhang Y, Luo Z, Hu F, Nan H, Wang X, Ni Z, Xu J, Shi Y, Wang X. Realization of vertical and lateral van der Waals heterojunctions using two-dimensional layered organic semiconductors Nano Research. 10: 1336-1344. DOI: 10.1007/S12274-017-1442-5 |
0.331 |
|
| 2017 |
Zhang T, Long M, Yan K, Qin M, Lu X, Zeng X, Cheng CM, Wong KS, Liu P, Xie W, Xu J. Crystallinity Preservation and Ion Migration Suppression through Dual Ion Exchange Strategy for Stable Mixed Perovskite Solar Cells Advanced Energy Materials. 7: 1700118. DOI: 10.1002/Aenm.201700118 |
0.355 |
|
| 2017 |
Sun J, Yao Y, Zeng X, Pan G, Hu J, Huang Y, Sun R, Xu J, Wong C. Preparation of Boron Nitride Nanosheet/Nanofibrillated Cellulose Nanocomposites with Ultrahigh Thermal Conductivity via Engineering Interfacial Thermal Resistance Advanced Materials Interfaces. 4: 1700563. DOI: 10.1002/Admi.201700563 |
0.302 |
|
| 2017 |
Huang Y, Hu J, Yao Y, Zeng X, Sun J, Pan G, Sun R, Xu J, Wong C. Manipulating Orientation of Silicon Carbide Nanowire in Polymer Composites to Achieve High Thermal Conductivity Advanced Materials Interfaces. 4: 1700446. DOI: 10.1002/Admi.201700446 |
0.306 |
|
| 2017 |
Yu Z, Ong Z, Li S, Xu J, Zhang G, Zhang Y, Shi Y, Wang X. Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors Advanced Functional Materials. 27: 1604093. DOI: 10.1002/Adfm.201604093 |
0.319 |
|
| 2017 |
Wan X, Chen K, Chen Z, Xie F, Zeng X, Xie W, Chen J, Xu J. Controlled Electrochemical Deposition of Large-Area MoS2
on Graphene for High-Responsivity Photodetectors Advanced Functional Materials. 27: 1603998. DOI: 10.1002/Adfm.201603998 |
0.333 |
|
| 2017 |
Chen K, Wan X, Xu J. Epitaxial Stitching and Stacking Growth of Atomically Thin Transition‐Metal Dichalcogenides (TMDCs) Heterojunctions Advanced Functional Materials. 27: 1603884. DOI: 10.1002/Adfm.201603884 |
0.306 |
|
| 2016 |
Zhang T, Long M, Yan K, Zeng X, Zhou F, Chen Z, Wan X, Chen K, Liu P, Li F, Yu T, Xie W, Xu J. Facet-Dependent Property of Sequentially Deposited Perovskite Thin Films: Chemical Origin and Self-Annihilation. Acs Applied Materials & Interfaces. 8: 32366-32375. PMID 27933852 DOI: 10.1021/Acsami.6B11986 |
0.376 |
|
| 2016 |
Long M, Zhang T, Chai Y, Ng CF, Mak TC, Xu J, Yan K. Nonstoichiometric acid-base reaction as reliable synthetic route to highly stable CH3NH3PbI3 perovskite film. Nature Communications. 7: 13503. PMID 27843140 DOI: 10.1038/Ncomms13503 |
0.312 |
|
| 2016 |
Yao Y, Zeng X, Pan G, Sun J, Hu J, Huang Y, Sun R, Xu JB, Wong CP. Interfacial Engineering of Silicon Carbide Nanowire/Cellulose Microcrystal Paper towards High Thermal Conductivity. Acs Applied Materials & Interfaces. PMID 27788322 DOI: 10.1021/Acsami.6B10935 |
0.311 |
|
| 2016 |
Yao Y, Zeng X, Sun R, Xu JB, Wong CP. Highly Thermally Conductive Composite Papers Prepared Based on the Thought of Bioinspired Engineering. Acs Applied Materials & Interfaces. PMID 27253387 DOI: 10.1021/Acsami.6B04636 |
0.306 |
|
| 2016 |
Xu X, Yao Y, Shan B, Gu X, Liu D, Liu J, Xu J, Zhao N, Hu W, Miao Q. Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27151777 DOI: 10.1002/Adma.201601171 |
0.332 |
|
| 2016 |
Liu X, Luo X, Nan H, Guo H, Wang P, Zhang L, Zhou M, Yang Z, Shi Y, Hu W, Ni Z, Qiu T, Yu Z, Xu JB, Wang X. Epitaxial Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27146896 DOI: 10.1002/Adma.201600400 |
0.305 |
|
| 2016 |
Zhang Y, Qiao J, Gao S, Hu F, He D, Wu B, Yang Z, Xu B, Li Y, Shi Y, Ji W, Wang P, Wang X, Xiao M, Xu H, Xu JB, et al. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit. Physical Review Letters. 116: 016602. PMID 26799035 DOI: 10.1103/Physrevlett.116.016602 |
0.353 |
|
| 2016 |
Wang F, Zeng X, Yao Y, Sun R, Xu J, Wong CP. Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity. Scientific Reports. 6: 19394. PMID 26783258 DOI: 10.1038/Srep19394 |
0.303 |
|
| 2016 |
Tian X, Liu L, Gong Z, Du Y, Gu J, Yakobson BI, Xu J. Unusual electronic and magnetic properties of lateral phosphorene–WSe2 heterostructures Journal of Materials Chemistry C. 4: 6657-6665. DOI: 10.1039/C6Tc01978A |
0.308 |
|
| 2016 |
Zhao B, Jiang L, Zeng X, Zhang K, Yuen MMF, Xu JB, Fu XZ, Sun R, Wong CP. A highly thermally conductive electrode for lithium ion batteries Journal of Materials Chemistry A. 4: 14595-14604. DOI: 10.1039/C6Ta04774B |
0.319 |
|
| 2016 |
Ye L, Li H, Chen Z, Xu J. Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction Acs Photonics. 3: 692-699. DOI: 10.1021/Acsphotonics.6B00079 |
0.346 |
|
| 2016 |
Yao Y, Zeng X, Wang F, Sun R, Xu JB, Wong CP. Significant Enhancement of Thermal Conductivity in Bioinspired Freestanding Boron Nitride Papers Filled with Graphene Oxide Chemistry of Materials. 28: 1049-1057. DOI: 10.1021/Acs.Chemmater.5B04187 |
0.328 |
|
| 2016 |
Xiao Y, Wang H, Zhou S, Yan K, Xie W, Guan Z, Tsang SW, Xu JB. Efficient ternary bulk heterojunction solar cells with PCDTBT as hole-cascade material Nano Energy. 19: 476-485. DOI: 10.1016/J.Nanoen.2015.11.016 |
0.319 |
|
| 2016 |
Li C, Xu YT, Zhao B, Jiang L, Chen SG, Xu JB, Fu XZ, Sun R, Wong CP. Flexible graphene electrothermal films made from electrochemically exfoliated graphite Journal of Materials Science. 51: 1043-1051. DOI: 10.1007/S10853-015-9434-X |
0.355 |
|
| 2016 |
Zeng X, Ye L, Guo K, Sun R, Xu J, Wong C. Fibrous Epoxy Substrate with High Thermal Conductivity and Low Dielectric Property for Flexible Electronics Advanced Electronic Materials. 2: 1500485. DOI: 10.1002/Aelm.201500485 |
0.318 |
|
| 2016 |
Liu X, Chen Z, Parrott EPJ, Ung BS, Xu J, Pickwell-MacPherson E. Graphene Based Terahertz Light Modulator in Total Internal Reflection Geometry Advanced Optical Materials. 5: 1600697. DOI: 10.1002/Adom.201600697 |
0.321 |
|
| 2016 |
Yan K, Wei Z, Zhang T, Zheng X, Long M, Chen Z, Xie W, Zhang T, Zhao Y, Xu J, Chai Y, Yang S. Near-Infrared Photoresponse of One-Sided Abrupt MAPbI3/TiO2Heterojunction through a Tunneling Process Advanced Functional Materials. 26: 8545-8554. DOI: 10.1002/Adfm.201602736 |
0.332 |
|
| 2015 |
Tian X, Liu L, Du Y, Gu J, Xu JB, Yakobson BI. Variable electronic properties of lateral phosphorene-graphene heterostructures. Physical Chemistry Chemical Physics : Pccp. PMID 26554700 DOI: 10.1039/C5Cp05443E |
0.308 |
|
| 2015 |
Huang SY, Zhao B, Zhang K, Yuen MM, Xu JB, Fu XZ, Sun R, Wong CP. Enhanced Reduction of Graphene Oxide on Recyclable Cu Foils to Fabricate Graphene Films with Superior Thermal Conductivity. Scientific Reports. 5: 14260. PMID 26404674 DOI: 10.1038/Srep14260 |
0.35 |
|
| 2015 |
Long M, Chen Z, Zhang T, Xiao Y, Zeng X, Chen J, Yan K, Xu J. Ultrathin efficient perovskite solar cells employing a periodic structure of a composite hole conductor for elevated plasmonic light harvesting and hole collection. Nanoscale. PMID 26377231 DOI: 10.1039/C5Nr05042A |
0.344 |
|
| 2015 |
Chen K, Wan X, Wen J, Xie W, Kang Z, Zeng X, Chen H, Xu JB. Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy. Acs Nano. PMID 26373884 DOI: 10.1021/Acsnano.5B03188 |
0.339 |
|
| 2015 |
Xu W, Cao H, Liang L, Xu JB. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics. Acs Applied Materials & Interfaces. 7: 14720-5. PMID 26054237 DOI: 10.1021/Acsami.5B02451 |
0.352 |
|
| 2015 |
Xiao Y, Wang H, Zhou S, Yan K, Guan Z, Tsang SW, Xu J. Enhanced Performance of Polymeric Bulk Heterojunction Solar Cells via Molecular Doping with TFSA. Acs Applied Materials & Interfaces. 7: 13415-21. PMID 26039377 DOI: 10.1021/Acsami.5B02104 |
0.354 |
|
| 2015 |
Xu X, Xiao T, Gu X, Yang X, Kershaw SV, Zhao N, Xu J, Miao Q. Solution-Processed Ambipolar Organic Thin-Film Transistors by Blending p- and n-Type Semiconductors: Solid Solution versus Microphase Separation. Acs Applied Materials & Interfaces. PMID 25886029 DOI: 10.1021/Acsami.5B01172 |
0.311 |
|
| 2015 |
Zeng X, Ye L, Yu S, Li H, Sun R, Xu J, Wong CP. Artificial nacre-like papers based on noncovalent functionalized boron nitride nanosheets with excellent mechanical and thermally conductive properties. Nanoscale. 7: 6774-81. PMID 25807278 DOI: 10.1039/C5Nr00228A |
0.318 |
|
| 2015 |
Yan K, Long M, Zhang T, Wei Z, Chen H, Yang S, Xu J. Hybrid halide perovskite solar cell precursors: colloidal chemistry and coordination engineering behind device processing for high efficiency. Journal of the American Chemical Society. 137: 4460-8. PMID 25780941 DOI: 10.1021/Jacs.5B00321 |
0.36 |
|
| 2015 |
Xu W, Wang H, Xie F, Chen J, Cao H, Xu JB. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors. Acs Applied Materials & Interfaces. 7: 5803-10. PMID 25679286 DOI: 10.1021/Am508775C |
0.364 |
|
| 2015 |
Yan K, Wei Z, Li J, Chen H, Yi Y, Zheng X, Long X, Wang Z, Wang J, Xu J, Yang S. High-performance graphene-based hole conductor-free perovskite solar cells: Schottky junction enhanced hole extraction and electron blocking. Small (Weinheim An Der Bergstrasse, Germany). 11: 2269-74. PMID 25641809 DOI: 10.1002/Smll.201403348 |
0.315 |
|
| 2015 |
Tian X, Liu L, Du Y, Gu J, Xu JB, Yakobson BI. Effects of 3d transition-metal doping on electronic and magnetic properties of MoS₂ nanoribbons. Physical Chemistry Chemical Physics : Pccp. 17: 1831-6. PMID 25474629 DOI: 10.1039/C4Cp04579C |
0.301 |
|
| 2015 |
Wang H, Xiao Y, Chen Z, Xu W, Long M, Xu JB. Solution-processed PCDTBT capped low-voltage InGaZnOx thin film phototransistors for visible-light detection Applied Physics Letters. 106. DOI: 10.1063/1.4922642 |
0.329 |
|
| 2015 |
Wang J, Cheng Z, Chen Z, Xu JB, Tsang HK, Shu C. Graphene photodetector integrated on silicon nitride waveguide Journal of Applied Physics. 117. DOI: 10.1063/1.4917378 |
0.309 |
|
| 2015 |
Dai Y, Zhao Y, Wang J, Xu J, Yang F. First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM Aip Advances. 5: 017133. DOI: 10.1063/1.4906792 |
0.308 |
|
| 2015 |
Wang H, Xu W, Zhou S, Xie F, Xiao Y, Ye L, Chen J, Xu J. Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors Journal of Applied Physics. 117: 35703. DOI: 10.1063/1.4906107 |
0.335 |
|
| 2015 |
Zeng X, Yu S, Ye L, Li M, Pan Z, Sun R, Xu J. Encapsulating carbon nanotubes with SiO2: a strategy for applying them in polymer nanocomposites with high mechanical strength and electrical insulation Journal of Materials Chemistry C. 3: 187-195. DOI: 10.1039/C4Tc01051E |
0.318 |
|
| 2015 |
Zeng X, Ye L, Yu S, Sun R, Xu J, Wong C. Facile Preparation of Superelastic and Ultralow Dielectric Boron Nitride Nanosheet Aerogels via Freeze-Casting Process Chemistry of Materials. 27: 5849-5855. DOI: 10.1021/Acs.Chemmater.5B00505 |
0.329 |
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| 2015 |
Dai Y, Xu J, Xu H, Zhao Y, Wang J. Design of a novel double doping polysilicon gate MOSFET Materials Science in Semiconductor Processing. 31: 229-234. DOI: 10.1016/J.Mssp.2014.11.031 |
0.317 |
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| 2015 |
Zeng X, Yu S, Sun R, Xu J. Mechanical reinforcement while remaining electrical insulation of glass fibre/polymer composites using core–shell CNT@SiO2 hybrids as fillers Composites Part a-Applied Science and Manufacturing. 73: 260-268. DOI: 10.1016/J.Compositesa.2015.03.015 |
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| 2014 |
He D, Zhang Y, Wu Q, Xu R, Nan H, Liu J, Yao J, Wang Z, Yuan S, Li Y, Shi Y, Wang J, Ni Z, He L, Miao F, ... Xu JB, et al. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nature Communications. 5: 5162. PMID 25330787 DOI: 10.1038/Ncomms6162 |
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| 2014 |
Liu D, He Z, Su Y, Diao Y, Mannsfeld SC, Bao Z, Xu J, Miao Q. Self-assembled monolayers of cyclohexyl-terminated phosphonic acids as a general dielectric surface for high-performance organic thin-film transistors. Advanced Materials (Deerfield Beach, Fla.). 26: 7190-6. PMID 25205623 DOI: 10.1002/Adma.201402822 |
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| 2014 |
Zhou S, Su Y, Xiao Y, Zhao N, Xu J, Wong C. Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics. Nanotechnology. 25: 265201. PMID 24915783 DOI: 10.1088/0957-4484/25/26/265201 |
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| 2014 |
Wang X, Xie W, Chen J, Xu JB. Homo- and hetero- p-n junctions formed on graphene steps. Acs Applied Materials & Interfaces. 6: 3-8. PMID 24182202 DOI: 10.1021/Am402808P |
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| 2014 |
Xie WG, Lai X, Wang XM, Wan X, Yan ML, Mai WJ, Liu PY, Chen J, Xu JB. Influence of annealing on raman spectrum of graphene in different gaseous environments Spectroscopy Letters. 47: 465-470. DOI: 10.1080/00387010.2013.809595 |
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| 2014 |
Xu W, Liu D, Wang H, Ye L, Miao Q, Xu J. Facile passivation of solution-processed InZnO thin-film transistors by octadecylphosphonic acid self-assembled monolayers at room temperature Applied Physics Letters. 104: 173504. DOI: 10.1063/1.4874303 |
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| 2014 |
Xu W, Wang H, Ye L, Xu J. The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors Journal of Materials Chemistry C. 2: 5389-5396. DOI: 10.1039/C4Tc00334A |
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| 2014 |
Wang H, Sun T, Xu W, Xie F, Ye L, Xiao Y, Wang Y, Chen J, Xu J. Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors Rsc Adv.. 4: 54729-54739. DOI: 10.1039/C4Ra09077B |
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| 2014 |
Xiao Y, Zhou S, Su Y, Ye L, Tsang SW, Xie F, Xu J. TFSA doped interlayer for efficient organic solar cells Organic Electronics: Physics, Materials, Applications. 15: 3702-3709. DOI: 10.1016/J.Orgel.2014.10.024 |
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| 2014 |
Su Y, Xie W, Xu J. Facile modification of Cu source–drain (S/D) electrodes for high-performance, low-voltage n-channel organic thin film transistors (OTFTs) based on C 60 Organic Electronics. 15: 3259-3267. DOI: 10.1016/J.Orgel.2014.07.032 |
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| 2014 |
Xiao Y, Zhou S, Su Y, Wang H, Ye L, Tsang S, Xie F, Xu J. Enhanced efficiency of organic solar cells by mixed orthogonal solvents Organic Electronics. 15: 2007-2013. DOI: 10.1016/J.Orgel.2014.05.011 |
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| 2014 |
Deng X, Nie R, Li A, Wei H, Zheng S, Huang W, Mo Y, Su Y, Wang Q, Li Y, Tang J, Xu J, Wong KY. Ultra-low work function transparent electrodes achieved by naturally occurring biomaterials for organic optoelectronic devices Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201400215 |
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| 2013 |
Chen K, Wan X, Liu D, Kang Z, Xie W, Chen J, Miao Q, Xu J. Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature. Nanoscale. 5: 5784-93. PMID 23689798 DOI: 10.1039/C3Nr00972F |
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| 2013 |
Liu D, Xu X, Su Y, He Z, Xu J, Miao Q. Self-assembled monolayers of phosphonic acids with enhanced surface energy for high-performance solution-processed N-channel organic thin-film transistors. Angewandte Chemie (International Ed. in English). 52: 6222-7. PMID 23650029 DOI: 10.1002/Anie.201300353 |
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| 2013 |
Su Y, Ouyang M, Liu P, Luo Z, Xie W, Xu J. Insights into the interfacial properties of low-voltage CuPc field-effect transistor. Acs Applied Materials & Interfaces. 5: 4960-5. PMID 23639244 DOI: 10.1021/Am4006447 |
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| 2013 |
Wang X, Xu H, Min J, Peng LM, Xu JB. Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances. Nanoscale. 5: 2811-7. PMID 23440092 DOI: 10.1039/C3Nr33940H |
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| 2013 |
Su YR, Xie WG, Li Y, Shi Y, Zhao N, Xu JB. A low-temperature, solution-processed high-k dielectric for low-voltage, high-performance organic field-effect transistors (OFETs) Journal of Physics D. 46: 95105. DOI: 10.1088/0022-3727/46/9/095105 |
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| 2013 |
Chen K, Wan X, Xu J. Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure Journal of Materials Chemistry C. 1: 4869-4878. DOI: 10.1039/C3Tc30567H |
0.303 |
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| 2013 |
Su Y, Jiang J, Ke N, Zhao N, Xie W, Xu J. Low-voltage flexible pentacene thin film transistors with a solution-processed dielectric and modified copper source-drain electrodes Journal of Materials Chemistry C. 1: 2585-2592. DOI: 10.1039/C3Tc00577A |
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| 2013 |
Wang X, Cheng Z, Xu K, Tsang HK, Xu J. High-responsivity graphene/silicon-heterostructure waveguide photodetectors Nature Photonics. 7: 888-891. DOI: 10.1038/Nphoton.2013.241 |
0.302 |
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| 2013 |
Xu H, Jiang Y, Li J, Ong BS, Shuai Z, Xu J, Zhao N. Spectroscopic study of electron and hole polarons in a high-mobility donor-acceptor conjugated copolymer Journal of Physical Chemistry C. 117: 6835-6841. DOI: 10.1021/Jp4003388 |
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| 2013 |
Wan X, Chen K, Du J, Liu D, Chen J, Lai X, Xie W, Xu J. Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large Areas The Journal of Physical Chemistry C. 117: 4800-4807. DOI: 10.1021/Jp309549Z |
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| 2013 |
Su Y, Wang M, Xie F, Chen J, Xie W, Zhao N, Xu J. In situ modification of low-cost Cu electrodes for high-performance low-voltage pentacene thin film transistors (TFTs) Organic Electronics. 14: 775-781. DOI: 10.1016/J.Orgel.2012.12.025 |
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| 2013 |
Shao L, Wang X, Xu H, Wang J, Xu J, Peng L, Lin H. Nanoantenna-Sandwiched Graphene with Giant Spectral Tuning in the Visible-to-Near-Infrared Region Advanced Optical Materials. 2: 162-170. DOI: 10.1002/Adom.201300313 |
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| 2012 |
Wang X, Wang C, Xu J. P-N Junction Formation in Electron-beam Irradiated Graphene Step Mrs Proceedings. 1407. DOI: 10.1557/Opl.2012.777 |
0.303 |
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| 2012 |
Li J, Du J, Xu J, Chan HLW, Yan F. The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors Applied Physics Letters. 100: 033301. DOI: 10.1063/1.3678196 |
0.346 |
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| 2012 |
Ye L, Xiao T, Zhao N, Xu H, Xiao Y, Xu J, Xiong Y, Xu W. Derivitization of pristine graphene for bulk heterojunction polymeric photovoltaic devices Journal of Materials Chemistry. 22: 16723. DOI: 10.1039/C2Jm32729E |
0.304 |
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| 2012 |
Liu D, Li Z, He Z, Xu J, Miao Q. Induced crystallization of rubrene with diazapentacene as the template Journal of Materials Chemistry. 22: 4396. DOI: 10.1039/C2Jm14941A |
0.361 |
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| 2012 |
Chen K, Wang X, Xu J, Pan L, Wang X, Shi Y. Electronic Properties of Graphene Altered by Substrate Surface Chemistry and Externally Applied Electric Field The Journal of Physical Chemistry C. 116: 6259-6267. DOI: 10.1021/Jp211255T |
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| 2012 |
Wan X, Chen K, Liu D, Chen J, Miao Q, Xu J. High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons Chemistry of Materials. 24: 3906-3915. DOI: 10.1021/Cm301993Z |
0.3 |
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| 2011 |
Xia DX, Zhang WH, Xie FY, Chen J, Xu JB. Reversible ferromagnetism study in un-doped ZnO thin films. Journal of Nanoscience and Nanotechnology. 11: 10557-61. PMID 22408947 DOI: 10.1166/Jnn.2011.4010 |
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| 2011 |
Su Y, Wang C, Xie W, Xie F, Chen J, Zhao N, Xu J. Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric. Acs Applied Materials & Interfaces. 3: 4662-7. PMID 22007599 DOI: 10.1021/Am201078V |
0.307 |
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| 2011 |
Zhao Z, Li Z, Lam JW, Maldonado JL, Ramos-Ortiz G, Liu Y, Yuan W, Xu J, Miao Q, Tang BZ. High hole mobility of 1,2-bis[4'-(diphenylamino)biphenyl-4-yl]-1,2-diphenylethene in field effect transistor. Chemical Communications (Cambridge, England). 47: 6924-6. PMID 21597643 DOI: 10.1039/C1Cc12011E |
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| 2011 |
Xue K, Wang L, An J, Xu J. Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope. Nanotechnology. 22: 195705. PMID 21430314 DOI: 10.1088/0957-4484/22/19/195705 |
0.357 |
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| 2011 |
Zhu MK, Tang JL, Ke N, Qiu Q, Lei N, Hou YD, Yan H, Xu JB. Annealing effect on relaxor behaviours of spark plasma sintered Pb(Sc1/2Nb1/2)O3superfine ceramics Advances in Applied Ceramics. 110: 74-79. DOI: 10.1179/1743676110Y.0000000002 |
0.325 |
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| 2011 |
Gritsenko VA, Nadolinny VA, Zhuravlev KS, Xu JB, Wong H. Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films Journal of Applied Physics. 109. DOI: 10.1063/1.3573482 |
0.32 |
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| 2011 |
Wang C, Wang X, Min J, Zhao N, Xu J. Super-linear rectifying property of rubrene single crystal devices Organic Electronics. 12: 1731-1735. DOI: 10.1016/J.Orgel.2011.06.024 |
0.31 |
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| 2010 |
Li Z, Du J, Tang Q, Wang F, Xu JB, Yu JC, Miao Q. Induced crystallization of rubrene in thin-film transistors. Advanced Materials (Deerfield Beach, Fla.). 22: 3242-6. PMID 20535740 DOI: 10.1002/Adma.201000786 |
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| 2010 |
Wang X, Song F, Chen Q, Wang T, Wang J, Liu P, Shen M, Wan J, Wang G, Xu JB. Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: a case study on Co-doped ZnO. Journal of the American Chemical Society. 132: 6492-7. PMID 20405827 DOI: 10.1021/Ja100912K |
0.325 |
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| 2010 |
Xia DX, Xu JB. High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric Journal of Physics D. 43: 442001. DOI: 10.1088/0022-3727/43/44/442001 |
0.353 |
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| 2010 |
Xie W, Xu J, An J, Xue K. Correlation between Molecular Packing and Surface Potential at Vanadyl Phthalocyanine/HOPG Interface Journal of Physical Chemistry C. 114: 19044-19047. DOI: 10.1021/Jp1076565 |
0.343 |
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| 2010 |
Li Z, Du J, Tang Q, Wang F, Xu J, Yu JC, Miao Q. Induced Crystallization of Rubrene in Thin-Film Transistors (Adv. Mater. 30/2010) Advanced Materials. 22: n/a-n/a. DOI: 10.1002/Adma.201090100 |
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| 2009 |
Xie WG, Xie FY, Yu XL, Xue K, Xu JB, Chen J, Zhang R. Co doped ZnO(0001)-Zn by diffusion method and its magnetic properties Applied Physics Letters. 95: 262506. DOI: 10.1063/1.3275713 |
0.321 |
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| 2009 |
Wang L, Chu PK, Xue K, Xu JB. In situ characterization of initial growth of HfO2 Applied Physics Letters. 94: 32904. DOI: 10.1063/1.3073863 |
0.366 |
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| 2009 |
Liu P, Wang C, Chen J, Xu N, Yang G, Ke N, Xu J. Localized Nanodiamond Crystallization and Field Emission Performance Improvement of Amorphous Carbon upon Laser Irradiation in Liquid The Journal of Physical Chemistry C. 113: 12154-12161. DOI: 10.1021/Jp901359B |
0.315 |
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| 2009 |
Tang Q, Zhang D, Wang S, Ke N, Xu J, Yu JC, Miao Q. A Meaningful Analogue of Pentacene: Charge Transport, Polymorphs, and Electronic Structures of Dihydrodiazapentacene Chemistry of Materials. 21: 1400-1405. DOI: 10.1021/Cm9001916 |
0.325 |
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| 2008 |
Wang X, Zheng R, Liu Z, Ho HP, Xu J, Ringer SP. Structural, optical and magnetic properties of Co-doped ZnO nanorods with hidden secondary phases. Nanotechnology. 19: 455702. PMID 21832791 DOI: 10.1088/0957-4484/19/45/455702 |
0.351 |
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| 2008 |
Wang H, Ho HP, Xu JB. Photoelectron spectroscopic investigation of nitrogen chemical states in ZnO: (N,Ga) thin films Journal of Applied Physics. 103: 103704. DOI: 10.1063/1.2921986 |
0.336 |
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| 2007 |
Xu J, Li W, Zhou J, Xu L, Cen ZH, Chen KJ, Song FQ, Wan JG, Han M. FORMATION AND FIELD EMISSION CHARACTERISTICS OF AMORPHOUS AND CRYSTALLINE Si NANOARRAYS Surface Review and Letters. 14: 543-546. DOI: 10.1142/S0218625X07009815 |
0.307 |
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| 2007 |
Xue K, Xu JB, Ho HP. Nanoscale in situ investigation of ultrathin silicon oxide thermal decomposition by high temperature scanning tunneling microscopy Nanotechnology. 18: 485709. DOI: 10.1088/0957-4484/18/48/485709 |
0.305 |
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| 2007 |
Han PG, Ma ZY, Xia ZY, Chen DY, Wei DY, Qian B, Li W, Xu J, Huang XF, Chen KJ, Feng D. Intermediate phase silicon structure induced enhancement of photoluminescence from thermal annealed a-Si/SiO2 multilayers Nanotechnology. 18: 255703. DOI: 10.1088/0957-4484/18/25/255703 |
0.325 |
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| 2007 |
Xue K, Ho HP, Xu JB. Local study of thickness-dependent electronic properties of ultrathin silicon oxide near SiO2/Si interface Journal of Physics D. 40: 2886-2893. DOI: 10.1088/0022-3727/40/9/033 |
0.322 |
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| 2007 |
Gao J, Xu JB, Zhu M, Ke N, Ma D. Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate Journal of Physics D: Applied Physics. 40: 5666-5669. DOI: 10.1088/0022-3727/40/18/022 |
0.342 |
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| 2007 |
Yu XJ, Xu JB, Cheung WY, Ke N. Optimizing the growth of vanadyl-phthalocyanine thin films for high-mobility organic thin-film transistors Journal of Applied Physics. 102: 103711. DOI: 10.1063/1.2815637 |
0.373 |
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| 2007 |
Lu L, Shen B, Xu FJ, Xu J, Gao B, Yang ZJ, Zhang GY, Zhang XP, Xu J, Yu DP. Morphology of threading dislocations in high-resistivity GaN films observed by transmission electron microscopy Journal of Applied Physics. 102: 033510. DOI: 10.1063/1.2768015 |
0.359 |
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| 2007 |
Xu FJ, Shen B, Wang MJ, Xu J, Lu L, Miao ZL, Yang ZJ, Qin ZX, Zhang GY, Lin B, Bai SL. Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates Applied Physics Letters. 91: 091905. DOI: 10.1063/1.2735551 |
0.326 |
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| 2007 |
Xue K, Ho HP, Xu JB, Wang RZ. Electron interferometry in the proximity of amorphous ultrathin SiO2∕Si Applied Physics Letters. 90: 182108. DOI: 10.1063/1.2735545 |
0.352 |
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| 2007 |
Wang L, Xue K, Xu JB, Huang AP, Chu PK. Effects of plasma immersion ion nitridation on dielectric properties of HfO2 Applied Physics Letters. 90: 122901. DOI: 10.1063/1.2715044 |
0.375 |
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| 2006 |
Wang RS, An J, Xu JB, Ong HC. Sub-micron Emission and Charge Transport Modification of ZnO Mrs Proceedings. 915. DOI: 10.1557/Proc-0915-R06-38 |
0.342 |
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| 2006 |
Huang AP, Chu PK, Wang L, Cheung WY, Xu JB, Wong SP. Fabrication of rutile TiO2 thin films by low-temperature, bias-assisted cathodic arc deposition and their dielectric properties Journal of Materials Research. 21: 844-850. DOI: 10.1557/Jmr.2006.0119 |
0.382 |
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| 2006 |
Huang AP, Wang L, Xu JB, Chu PK. Plasma-nitrided high-k polycrystalline nano-array induced by electron irradiation Nanotechnology. 17: 4379-4383. DOI: 10.1088/0957-4484/17/17/015 |
0.309 |
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| 2006 |
Ni WH, An J, Lai CW, Ong HC, Xu JB. Emission enhancement from metallodielectric-capped ZnO films Journal of Applied Physics. 100: 26103. DOI: 10.1063/1.2214603 |
0.332 |
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| 2006 |
Wang X, Xu JB, Ke N, Yu J, Wang J, Li Q, Ong HC, Zhang R. Imperfect oriented attachment: Direct activation of high-temperature ferromagnetism in diluted magnetic semiconductor nanocrystals Applied Physics Letters. 88: 223108. DOI: 10.1063/1.2208554 |
0.334 |
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| 2006 |
Wang L, Xue K, Xu JB, Huang AP, Chu PK. Control of interfacial silicate between HfO2 and Si by high concentration ozone Applied Physics Letters. 88: 72903. DOI: 10.1063/1.2173708 |
0.334 |
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| 2005 |
Wang RZ, Ding XM, Wang B, Xue K, Xu JB, Yan H, Hou XY. Structural enhancement mechanism of field emission from multilayer semiconductor films Physical Review B. 72: 125310. DOI: 10.1103/Physrevb.72.125310 |
0.309 |
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| 2005 |
Xue K, Xu JB, Xi L, An J, Chen J. In situ fabrication and characterization of tungsten nanodots on SiO2/Si via field induced nanocontact with a scanning tunnelling microscope Nanotechnology. 16: 2993-3000. DOI: 10.1088/0957-4484/16/12/044 |
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| 2005 |
Yang YH, Wang CX, Wang B, Li ZY, Chen J, Chen DH, Xu NS, Yang GW, Xu JB. Radial ZnO nanowire nucleation on amorphous carbons Applied Physics Letters. 87: 183109. DOI: 10.1063/1.2126139 |
0.301 |
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| 2005 |
Xu M, Xu J. Visualization of thermally-activated degradation pathways of tris(8-hydroxyquinoline) aluminum thin films for electroluminescence application Thin Solid Films. 491: 317-322. DOI: 10.1016/J.Tsf.2005.05.025 |
0.368 |
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| 2005 |
Zhu M, Liu L, Hou Y, Yan H, Xu J, Shao M, Chen X. Effects of sputtering pressure on compositions and structures of fresnoite thin films Physica B: Condensed Matter. 355: 100-105. DOI: 10.1016/J.Physb.2004.10.028 |
0.337 |
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| 2005 |
Chen J, Xu J, Xue K, An J, Ke N, Cao W, Xia H, Shi J, Tian D. Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films Microelectronics Reliability. 45: 137-142. DOI: 10.1016/J.Microrel.2004.05.006 |
0.375 |
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| 2005 |
Zhu M, Dai W, Hou Y, Yan H, Xu JB. Microstructure control of sputtered Ba2TiSi2O8 films by sol–gel-derived underlayer Journal of Crystal Growth. 285: 117-122. DOI: 10.1016/J.Jcrysgro.2005.08.004 |
0.359 |
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| 2005 |
Huang AP, Fu RKY, Chu PK, Wang L, Cheung WY, Xu JB, Wong SP. Plasma nitridation and microstructure of high-k ZrO2 thin films fabricated by cathodic arc deposition Journal of Crystal Growth. 277: 422-427. DOI: 10.1016/J.Jcrysgro.2005.01.088 |
0.385 |
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| 2005 |
Xu M, Xu J, An J. Visualization of thermally activated morphology evolution of N, N’-di(naphthalene-1-yl)- N, N’-diphthalbenzidine films on ITO/copper phthalocyanine underlying layer Applied Physics A. 81: 1151-1156. DOI: 10.1007/S00339-004-3091-2 |
0.374 |
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| 2005 |
Hui KC, An J, Zhang XY, Xu JB, Dai JY, Ong HC. Electron beam induced light emission and charge conduction patterning in ZnO by using an AlOx layer Advanced Materials. 17: 1960-1964. DOI: 10.1002/Adma.200401461 |
0.302 |
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| 2004 |
Xu MS, Xu JB, Chen HZ, Wang M. Nanoscale investigation of moisture-induced degradation mechanisms of tris(8-hydroxyquinoline) aluminium-based organic light-emitting diodes Journal of Physics D: Applied Physics. 37: 2618-2622. DOI: 10.1088/0022-3727/37/18/019 |
0.324 |
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| 2004 |
Xu M, Xu J. Nanoscale study on origins of the bright clusters in/on moisture-exposed tris(8-hydroxyquinoline) aluminum thin films Synthetic Metals. 145: 177-182. DOI: 10.1016/J.Synthmet.2004.05.017 |
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| 2004 |
Dai W, Zhu M, Hou Y, Wang H, Yan H, Shao M, Chen X, Xu J. Preparation and characterization of Ba2TiSi2O8 ferroelectric films produced by sol–gel method Materials Letters. 58: 2927-2931. DOI: 10.1016/J.Matlet.2004.05.021 |
0.375 |
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| 2003 |
Li J, Zheng YF, Xu JB, Dai K. Te-doped cadmium telluride films fabricated by close spaced sublimation Semiconductor Science and Technology. 18: 611-614. DOI: 10.1088/0268-1242/18/7/302 |
0.377 |
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| 2003 |
Chang YQ, Wang DB, Luo XH, Xu XY, Chen XH, Li L, Chen CP, Wang RM, Xu J, Yu DP. Synthesis, optical, and magnetic properties of diluted magnetic semiconductor Zn1−xMnxO nanowires via vapor phase growth Applied Physics Letters. 83: 4020-4022. DOI: 10.1063/1.1625788 |
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| 2003 |
Xing YJ, Xi ZH, Xue ZQ, Zhang XD, Song JH, Wang RM, Xu J, Song Y, Zhang SL, Yu DP. Optical properties of the ZnO nanotubes synthesized via vapor phase growth Applied Physics Letters. 83: 1689-1691. DOI: 10.1063/1.1605808 |
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| 2003 |
Xiang B, Zhang HZ, Li GH, Yang FH, Su FH, Wang RM, Xu J, Lu GW, Sun XC, Zhao Q, Yu DP. Green-light-emitting ZnSe nanowires fabricated via vapor phase growth Applied Physics Letters. 82: 3330-3332. DOI: 10.1063/1.1573334 |
0.378 |
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| 2003 |
Lindner JKN, Tsang WM, Wong SP, Xu JB, Wilson IH. XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices Thin Solid Films. 427: 417-421. DOI: 10.1016/S0040-6090(02)01194-X |
0.352 |
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| 2003 |
Chen K, Yu Y, Luo E, Xie Z, Xu J, Wilson I, Bishop W, Shen D. Characterization of nano-sized Si islands in buried oxide layer of SIMOX by conducting AFM Chemical Physics Letters. 376: 748-752. DOI: 10.1016/S0009-2614(03)01071-6 |
0.321 |
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| 2003 |
Xu M, Xu J, Luo E, Xie Z. Nanoscale investigation on nature of dark hole in moisture-exposed tris(8-hydroxyquinoline) aluminum thin films Chemical Physics Letters. 374: 656-660. DOI: 10.1016/S0009-2614(03)00804-2 |
0.33 |
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| 2003 |
Chen D, Wong SP, Cheung WY, Xu JB. Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis Solid State Communications. 128: 435-439. DOI: 10.1016/J.Ssc.2003.07.006 |
0.322 |
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| 2002 |
Hu G, Tang T, Xu J. Preparation of (100)-Oriented LaNiO3Oxide Electrodes for SrBi2Ta2O9-Based Ferroelectric Capacitors Japanese Journal of Applied Physics. 41: 6877-6881. DOI: 10.1143/Jjap.41.6877 |
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| 2002 |
Xu MS, Xu JB, An J. REAL-TIME VISUALIZATION OF MORPHOLOGICAL EVOLUTION OF N, N'-di(naphthalene-1-yl)-N, N'-diphthalbenzidine THIN FILMS: VARIABLE TEMPERATURE ATOMIC FORCE MICROSCOPY STUDY International Journal of Nanoscience. 1: 725-730. DOI: 10.1142/S0219581X02000966 |
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| 2002 |
XU J, HUANG X, LI W, WANG L, CHEN K, XU J, WILSON IH. VERY LOW THRESHOLD ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS WITH HYDROGEN DILUTION International Journal of Modern Physics B. 16: 988-992. DOI: 10.1142/S0217979202010737 |
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| 2002 |
Xu J, Huang X, Li W, Chen K, Xu J. Stable field emission with low threshold field from amorphous carbon films due to layer-by-layer hydrogen plasma annealing Journal of Applied Physics. 91: 5434-5437. DOI: 10.1063/1.1464211 |
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| 2002 |
He JZ, Xu JB, Xu MS, Xie Z, Wilson IH, Ma XL, Li Q, Wang N, Hung LS, Lee CS, Lee ST. Dispersion, refinement, and manipulation of single silicon nanowires Applied Physics Letters. 80: 1812-1814. DOI: 10.1063/1.1456966 |
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| 2002 |
Xu MS, Xu JB, Wang M, Que DL. Optical and xerographic properties of phthalocyanine codeposited composite film and ultrathin multilayered structure Journal of Applied Physics. 91: 748-752. DOI: 10.1063/1.1427432 |
0.354 |
|
| 2002 |
Wang H, Wong SP, Cheung WY, Ke N, Xu JB, Li WQ. Study on microstructure and magnetic domain structure in sputtered (Ni66Fe22Co12)xC1-x nanocomposite films Journal of Materials Science: Materials in Electronics. 13: 419-424. DOI: 10.1023/A:1016096611820 |
0.344 |
|
| 2002 |
Wang B, Kwok KW, Chan HLW, Choy CL, Tong KY, Luo EZ, Xu JB, Wilson IH. Study of polarization switching in PZT films with RuO2 electrodes by conducting atomic force microscopy Materials Characterization. 48: 249-253. DOI: 10.1016/S1044-5803(02)00255-3 |
0.357 |
|
| 2002 |
Wang J, Luo EZ, Wong KH, Chan HLW, Xu JB, Wilson IH, Choy CL. Ferroelectric domain configuration and piezoelectric responses in (001)-oriented PMN-PT films Materials Characterization. 48: 215-220. DOI: 10.1016/S1044-5803(02)00242-5 |
0.357 |
|
| 2002 |
Luo EZ, Lin S, Xie Z, Xu JB, Wilson IH, Yu YH, Yu LJ, Wang X. Studying the high-field electron conduction of tetrahedral amorphous carbon thin films by conducting atomic force microscopy Materials Characterization. 48: 205-210. DOI: 10.1016/S1044-5803(02)00240-1 |
0.363 |
|
| 2002 |
He JZ, Xu JB, Xie Z, Chiah MF, Ke N, Cheung WY, Wilson IH, Ma XL, Tang YH, Wang N, Lee CS, Lee ST. Sample refinement and manipulation of silicon nanowires: A step towards single wire characterization Materials Characterization. 48: 177-181. DOI: 10.1016/S1044-5803(02)00233-4 |
0.303 |
|
| 2002 |
Wang H, Li WQ, Wong SP, Cheung WY, Ke N, Xu JB, Lu X, Yan X. Magnetic force microscopy study of domain structures in magnetoresistance (Ni74Fe16Co10)xAg1-x granular films Materials Characterization. 48: 153-158. DOI: 10.1016/S1044-5803(02)00200-0 |
0.309 |
|
| 2002 |
Guo H, Xu J, Wilson IH, Xie Z, Luo E. Study of microscopic piezoelectricity of (Pb0.76Ca0.24)TiO3 thin films Physics Letters A. 294: 217-221. DOI: 10.1016/S0375-9601(02)00023-3 |
0.346 |
|
| 2002 |
Guo H, Xu J, Xie Z, Luo E, Wilson I, Zhong W. Ferroelectric relaxation of (Pb0.76Ca0.24)TiO3 thin film Solid State Communications. 121: 603-607. DOI: 10.1016/S0038-1098(02)00062-5 |
0.33 |
|
| 2002 |
Fong WK, Zhu CF, Leung BH, Surya C, Sundaravel B, Luo EZ, Xu JB, Wilson IH. Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy Microelectronics Reliability. 42: 1179-1184. DOI: 10.1016/S0026-2714(02)00086-0 |
0.367 |
|
| 2002 |
Gritsenko V, Kwok R, Wong H, Xu J. Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride Journal of Non-Crystalline Solids. 297: 96-101. DOI: 10.1016/S0022-3093(01)00910-3 |
0.332 |
|
| 2002 |
Das AK, Dev B, Sundaravel B, Luo E, Xu J, Wilson I. Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature Pramana. 59: 133-142. DOI: 10.1007/S12043-002-0037-0 |
0.318 |
|
| 2001 |
Xu JB, Hu GD, Wong SP. Structural Inhomogeneity of SrBi 2 Ta 2 O 9 Thin Films Prepared by Layer-by-Layer Technique Mrs Proceedings. 688. DOI: 10.1557/Proc-688-C4.7.1 |
0.348 |
|
| 2001 |
Zhang H, Wu C, Liang L, He Y, Zhu Y, Chen Y, Ke N, Xu JB, Wong SP, Wei A, Peng S. Morphology and characteristics of C60 thin films grown in argon atmosphere by thermal evaporation Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 1018-1021. DOI: 10.1116/1.1368677 |
0.367 |
|
| 2001 |
Zhang H, Wu C, Liang L, Chen Y, He Y, Zhu Y, Ke N, Xu JB, Wong SP, Wei A, Peng S. Structural, morphological and optical properties of C60 cluster thin films produced by thermal evaporation under argon gas Journal of Physics Condensed Matter. 13: 2883-2889. DOI: 10.1088/0953-8984/13/13/303 |
0.355 |
|
| 2001 |
Guo HY, Wilson IH, Xu JB, Luo EZ, Cheung WY, Ke N, Sundaral B. Aging effect on the ferroelectric property of YMnO3 thin film Ferroelectrics. 259: 181-185. DOI: 10.1080/00150190108008737 |
0.342 |
|
| 2001 |
Mo D, Xu JB, Liu Y, Hu GD. Ellipsometric study of optical properties of oriented SBT thin films Ferroelectrics. 264: 243-248. DOI: 10.1080/00150190108008576 |
0.341 |
|
| 2001 |
Luo EZ, Wong SK, Pakhomov AB, Xu JB, Wilson IH, Wong CY. Tunneling current and thickness inhomogeneities of ultrathin aluminum oxide films in magnetic tunneling junctions Journal of Applied Physics. 90: 5202-5207. DOI: 10.1063/1.1412586 |
0.345 |
|
| 2001 |
Xu J, Huang X, Li W, Wang L, Huang X, Chen K, Xu J, Wilson IH. Vacuum electron emission with low turn-on electric field from hydrogenated amorphous carbon thin films Applied Physics Letters. 79: 141-143. DOI: 10.1063/1.1383563 |
0.339 |
|
| 2001 |
Xu MS, Xu JB, Tian DX, Ji ZG, Chen HZ, Wang M, Que DL. Alternate heteroepitaxial growth of chloroindium phthalocyanine and chloroaluminum phthalocyanine ultrathin multilayered structure and its xerographic and optical properties Thin Solid Films. 384: 109-114. DOI: 10.1016/S0040-6090(00)01685-0 |
0.36 |
|
| 2000 |
Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C, Sundaravel B, Luo EZ, Xu JB, Wilson IH. The effect of indium surfactant on the optoelectronic and structural properties of MBE grown gallium nitride Materials Research Society Symposium - Proceedings. 618: 153-158. DOI: 10.1557/Proc-618-153 |
0.301 |
|
| 2000 |
Wang L, Huang X, Li J, Xu J, Yin X, Li Q, Li W, Zhu J, Wang M, Liu Z, Chen K, Fung YM, Xu JB. AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiNx:H Multilayers Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A25.1 |
0.307 |
|
| 2000 |
Kim MJ, Carpenter RW, Cox MJ, Xu J. Controlled Planar Interface Synthesis by Ultrahigh Vacuum Diffusion Bonding/deposition Journal of Materials Research. 15: 1008-1016. DOI: 10.1557/Jmr.2000.0144 |
0.307 |
|
| 2000 |
Yu YH, Chen ZY, Luo EZ, Cheung WY, Zhao JP, Wang X, Xu JB, Wong SP, Wilson IH. Optical and electrical properties of nitrogen incorporated amorphous carbon films Journal of Applied Physics. 87: 2874-2879. DOI: 10.1063/1.372271 |
0.347 |
|
| 2000 |
Sundaravel B, Luo EZ, Xu JB, Wilson IH, Fong WK, Wang LS, Surya C. Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) Journal of Applied Physics. 87: 955-957. DOI: 10.1063/1.371966 |
0.317 |
|
| 2000 |
Wang H, Lu X, Yan X, Wong SP, Cheung WY, Ke N, Xu JB, Hu SJ, Zeng DC, Liu ZY. Magnetic domain structures and giant magnetoresistance of granular (Ni74Fe16Co10)35Ag65 films Journal of Applied Physics. 88: 4216-4220. DOI: 10.1063/1.1308063 |
0.357 |
|
| 2000 |
Ding X, Tay BK, Shi X, Chiah MF, Cheung WY, Wong SP, Xu JB, Wilson IH. Magnetic properties of Fe+-implanted silica films after post-implantation annealing Journal of Applied Physics. 88: 2745-2749. DOI: 10.1063/1.1287777 |
0.311 |
|
| 2000 |
Hu GD, Wilson IH, Xu JB, Li CP, Wong SP. Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes Applied Physics Letters. 76: 1758-1760. DOI: 10.1063/1.126158 |
0.377 |
|
| 2000 |
Luo EZ, Pakhomov AB, Zhang Z, Chan M-, Wilson IH, Xu JB, Yan X. Conductance distribution in granular metal films: a combined study by conducting atomic force microscopy and computer simulation Physica B-Condensed Matter. 279: 98-101. DOI: 10.1016/S0921-4526(99)00679-1 |
0.33 |
|
| 2000 |
Wong S, Chiah M, Cheung W, Ke N, Xu J, Zhang X. Magnetoresistance properties of ion beam synthesized granular magnetic thin films Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 169: 166-173. DOI: 10.1016/S0168-583X(00)00034-3 |
0.342 |
|
| 2000 |
Cheng L, Yu Y, Sundaravel B, Luo E, Lin S, Lei Y, Ren C, Cheung W, Wong S, Xu J, Wilson I. Compositional and morphological study of reactive ion beam deposited AlN thin films Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 169: 94-97. DOI: 10.1016/S0168-583X(00)00023-9 |
0.354 |
|
| 1999 |
Wong S, Chiah M, Cheung W, Ke N, Xu J, Zhang X. Gmr Effect and Properties of CoAg Granular Films Formed by Implantation with a Metal Vapor Vacuum Arc Ion Source Mrs Proceedings. 577. DOI: 10.1557/Proc-577-415 |
0.342 |
|
| 1999 |
Novikov Y, Morokov Y, Gritsenko V, Xu J. Capturing Properties of Two-Fold Coordinated Nitrogen Atom in Silicon Oxynitride Mrs Proceedings. 567. DOI: 10.1557/Proc-567-141 |
0.303 |
|
| 1999 |
Chen D, Cheung WY, Wong SP, Fung YM, Xu JB, Wilson IH, Kwok RWM. Field emission characteristics of SiC capped Si tip array by ion beam synthesis Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 2109-2112. DOI: 10.1116/1.581734 |
0.317 |
|
| 1999 |
Gritsenko VA, Wong H, Xu JB, Kwok RM, Petrenko IP, Zaitsev BA, Morokov YN, Novikov YN. Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures Journal of Applied Physics. 86: 3234-3240. DOI: 10.1063/1.371195 |
0.315 |
|
| 1999 |
Ding X, Chiah MF, Cheung WY, Wong SP, Xu JB, Wilson IH, Wang H, Chen L, Liu X. Aggregation and out diffusion of iron atoms for Fe ion implanted silica films Journal of Applied Physics. 86: 2550-2554. DOI: 10.1063/1.371091 |
0.323 |
|
| 1999 |
Hu GD, Xu JB, Wilson IH. Domain imaging and local piezoelectric properties of the (200)-predominant SrBi2Ta2O9 thin film Applied Physics Letters. 75: 1610-1612. DOI: 10.1063/1.124770 |
0.303 |
|
| 1999 |
Hu GD, Wilson IH, Xu JB, Cheung WY, Wong SP, Wong HK. Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method Applied Physics Letters. 74: 1221-1223. DOI: 10.1063/1.123505 |
0.382 |
|
| 1999 |
Hu GD, Xu JB, Wilson IH, Cheung WY, Ke N, Wong SP. Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition Applied Physics Letters. 74: 3711-3713. DOI: 10.1063/1.123229 |
0.372 |
|
| 1999 |
Wong S, Chiah M, Cheung W, Ke N, Xu J. Characterization and giant magnetoresistance effect in cobalt–silver granular films formed by MEVVA implantation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 148: 813-818. DOI: 10.1016/S0168-583X(98)90840-0 |
0.352 |
|
| 1999 |
Chen ZY, Yu YH, Zhao JP, Yang SQ, Shi TS, Liu XH, Luo EZ, Xu JB, Wilson IH. Electrical properties of nitrogen incorporated tetrahedral amorphous carbon films Thin Solid Films. 339: 74-77. DOI: 10.1016/S0040-6090(98)01066-9 |
0.35 |
|
| 1999 |
Chen D, Wei A, Wong S, Peng S, Xu J, Wilson I. Synthesis and microstructural properties of tetrahedral amorphous carbon films Journal of Non-Crystalline Solids. 254: 161-166. DOI: 10.1016/S0022-3093(99)00389-0 |
0.367 |
|
| 1998 |
Chen D, Wong SP, Cheung W, Luo E, Wu W, Xu J, Wilson I, Kwok R. Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation Mrs Proceedings. 509. DOI: 10.1557/Proc-509-199 |
0.312 |
|
| 1998 |
Wu W, Chen DH, Xu JB, Cheung WY, Wong SP, Wilson IH, Kwok RWM. Atomic force microscopy study of microcrystalline SiC fabricated by ion beam synthesis Journal of Vacuum Science and Technology. 16: 968-973. DOI: 10.1116/1.581280 |
0.342 |
|
| 1998 |
Chen D, Wong SP, Cheung WY, Wu W, Luo EZ, Xu JB, Wilson IH, Kwok RWM. Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source Applied Physics Letters. 72: 1926-1928. DOI: 10.1063/1.121229 |
0.324 |
|
| 1998 |
Mao JM, Xu JB, Peng QC, Wong SP, Wilson IH. Electrical properties of CoSi2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study Journal of Materials Science Letters. 17: 219-222. DOI: 10.1023/A:1006536328606 |
0.362 |
|
| 1998 |
Chen ZY, Zhao JP, Yu YH, Wang X, Yang SQ, Shi TS, Liu XH, Luo EZ, Xu JB, Wilson IH. Influence of ion energy on the surface morphology of tetrahedral amorphous carbon films Journal of Materials Science Letters. 17: 335-337. DOI: 10.1023/A:1006502210376 |
0.301 |
|
| 1998 |
Chen ZY, Yu YH, Zhao JP, Wang X, Yang SQ, Shi TS, Liu XH, Wong SP, Wilson IH, Xu JB, Luo EZ. Optical properties in infra-red region of nitrogen-incorporated amorphous carbon films Diamond and Related Materials. 7: 491-494. DOI: 10.1016/S0925-9635(97)00242-2 |
0.319 |
|
| 1998 |
Chen Z, Yu Y, Zhao J, Wang X, Yang S, Shi T, Liu X, Lou E, Xu J, Wilson I. Surface morphology of nitrogen doped tetrahedral amorphous carbon films on silicon by atomic microscopy imaging Materials Letters. 34: 1-4. DOI: 10.1016/S0167-577X(97)00129-8 |
0.358 |
|
| 1998 |
Wu W, Huang X, Chen K, Xu JB, Gao X, Xu J, Li W. Room temperature visible photoluminescence from crystallized nano-Si thin films Journal of Non-Crystalline Solids. 1045-1048. DOI: 10.1016/S0022-3093(98)00245-2 |
0.353 |
|
| 1998 |
Wu W, Chen D, Cheung W, Xu J, Wong S, Kwok R, Wilson I. Crystallization of ion-beam-synthesized SiC layer by thermal annealing Applied Physics a: Materials Science & Processing. 66: S539-S543. DOI: 10.1007/S003390051198 |
0.331 |
|
| 1997 |
Jiang RL, Gu SL, Jiang N, Li Z, Xu J, Zhu SM, Hu LQ, Zheng YD. SiGe/Ge heterojunction infrared detector Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 968-970. DOI: 10.1116/1.580789 |
0.312 |
|
| 1997 |
Lui KM, Chik KP, Xu JB. Dendritic crystallization of amorphous germanium by in situ thermal pulse annealing Journal of Applied Physics. 81: 7757-7763. DOI: 10.1063/1.365385 |
0.371 |
|
| 1997 |
Lui KM, Chik KP, Xu JB. Epitaxial regrowth of Ge films on (001) GaAs by in situ thermal pulse annealing of evaporated amorphous germanium Applied Physics Letters. 70: 865-867. DOI: 10.1063/1.119071 |
0.38 |
|
| 1997 |
Wang Y, Sheng YN, Ge W, Wang J, Chang LL, Xie J, Ma J, Xu J. Morphology of MBE grown InAs films studied by atomic force microscope Journal of Crystal Growth. 175: 1289-1293. DOI: 10.1016/S0022-0248(96)00959-1 |
0.334 |
|
| 1996 |
Kim MJ, Cox MJ, Xu J. Interface Synthesis By UHV Deposition/Diffusion Bonding Mrs Proceedings. 458. DOI: 10.1557/Proc-458-327 |
0.308 |
|
| 1995 |
Devine RAB, Warren WL, Xu JB, Wilson IH, Paillet P, Leray J‐. Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures Journal of Applied Physics. 77: 175-186. DOI: 10.1063/1.359365 |
0.305 |
|
| 1995 |
Hsu CC, Xu JB, Wilson IH, Wang SM. Surface morphology of metalorganic vapor phase epitaxy grown strained‐layer InxGa1−xAs on GaAs observed by atomic force microscopy Applied Physics Letters. 66: 604-606. DOI: 10.1063/1.114027 |
0.325 |
|
| 1994 |
Warren WL, Fleetwood DM, Shaneyfelt MR, Winokur PS, Devine RAB, Mathiot D, Wilson IH, Xu JB. Reliability Implications of Defects in High Temperature Annealed Si/SiO 2 /Si Structures Mrs Proceedings. 338: 3. DOI: 10.1557/Proc-338-3 |
0.318 |
|
| 1994 |
Xu JB, Läuger K, Dransfeld K, Wilson IH. Thermal sensors for investigation of heat transfer in scanning probe microscopy Review of Scientific Instruments. 65: 2262-2266. DOI: 10.1063/1.1145225 |
0.306 |
|
| 1994 |
Xu JB, Läuger K, Möller R, Dransfeld K, Wilson IH. Energy-exchange processes by tunneling electrons Applied Physics a Solids and Surfaces. 59: 155-161. DOI: 10.1007/Bf00332209 |
0.301 |
|
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