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Parthapratim Biswas - Publications

Affiliations: 
The University of Southern Mississippi, Hattiesburg, MS, United States 
Area:
Condensed Matter Physics, Theory Physics, Materials Science Engineering
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45 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Limbu DK, Elliott SR, Atta-Fynn R, Biswas P. Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals. Scientific Reports. 10: 7742. PMID 32385360 DOI: 10.1038/S41598-020-64327-3  0.759
2019 Biswas P, Paudel D, Atta-Fynn R, Elliott SR. Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study. Nanoscale. PMID 31750495 DOI: 10.1039/C9Nr08209C  0.757
2019 Limbu DK, Atta-Fynn R, Biswas P. Atomistic simulation of nearly defect-free models of amorphous silicon: An information-based approach Mrs Advances. 4: 87-93. DOI: 10.1557/Adv.2019.76  0.756
2019 Limbu DK, Madueke MU, Atta-Fynn R, Drabold DA, Biswas P. Ab initio density-functional studies of 13-atom Cu and Ag clusters Journal of Physics: Conference Series. 1252: 012009. DOI: 10.1088/1742-6596/1252/1/012009  0.773
2019 Paudel D, Atta-Fynn R, Drabold DA, Biswas P. Effect of low-temperature annealing on void-related microstructure in amorphous silicon: A computational study Journal of Physics: Conference Series. 1252: 012005. DOI: 10.1088/1742-6596/1252/1/012005  0.76
2019 Dahal D, Atta-Fynn R, Elliott SR, Biswas P. Hyperuniformity and static structure factor of amorphous silicon in the infinite-wavelength limit Journal of Physics: Conference Series. 1252: 012003. DOI: 10.1088/1742-6596/1252/1/012003  0.671
2019 Atta-Fynn R, Drabold DA, Biswas P. First principles modeling of the structural, electronic, and vibrational properties of Ni40Pd40P20 bulk metallic glass Journal of Non-Crystalline Solids: X. 1: 100004. DOI: 10.1016/J.NOCX.2018.100004  0.765
2018 Bhattarai B, Biswas P, Atta-Fynn R, Drabold DA. Amorphous graphene: a constituent part of low density amorphous carbon. Physical Chemistry Chemical Physics : Pccp. PMID 29999055 DOI: 10.1039/C8Cp02545B  0.762
2018 Atta-Fynn R, Biswas P. Nearly defect-free dynamical models of disordered solids: The case of amorphous silicon. The Journal of Chemical Physics. 148: 204503. PMID 29865802 DOI: 10.1063/1.5021813  0.76
2018 Limbu DK, Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. Information-driven inverse approach to disordered solids: Applications to amorphous silicon Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.115602  0.776
2018 Paudel D, Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. Small-angle x-ray scattering in amorphous silicon: A computational study Physical Review B. 97. DOI: 10.1103/Physrevb.97.184202  0.773
2018 Igram D, Bhattarai B, Biswas P, Drabold D. Large and realistic models of amorphous silicon Journal of Non-Crystalline Solids. 492: 27-32. DOI: 10.1016/J.Jnoncrysol.2018.04.011  0.747
2018 Prasai K, Subedi KN, Ferris K, Biswas P, Drabold DA. Spatial Projection of Electronic Conductivity: The Example of Conducting Bridge Memory Materials Physica Status Solidi (Rrl) - Rapid Research Letters. 12: 1800238. DOI: 10.1002/Pssr.201800238  0.624
2017 Limbu DK, Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. Structural properties of transition-metal clusters via force-biased Monte Carlo and ab initio calculations: A comparative study Physical Review B. 96. DOI: 10.1103/Physrevb.96.174208  0.759
2017 Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. First-principles simulations of vibrational decay and lifetimes ina-Si:H anda-Si:D Physical Review B. 95. DOI: 10.1103/Physrevb.95.104205  0.773
2017 Biswas P, Paudel D, Atta-Fynn R, Drabold DA, Elliott SR. Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: AnAb InitioStudy Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.024013  0.79
2017 Limbu DK, Biswas P. Structure of transition metal clusters: A force-biased Monte Carlo approach Journal of Physics: Conference Series. 921: 012010. DOI: 10.1088/1742-6596/921/1/012010  0.34
2016 Pandey A, Biswas P, Drabold DA. Inversion of diffraction data for amorphous materials. Scientific Reports. 6: 33731. PMID 27652893 DOI: 10.1038/Srep33731  0.693
2016 Pandey A, Biswas P, Bhattarai B, Drabold DA. Realistic inversion of diffraction data for an amorphous solid: The case of amorphous silicon Physical Review B. 94. DOI: 10.1103/Physrevb.94.235208  0.739
2016 Biswas P, Atta-Fynn R, Elliott SR. Metadynamical approach to the generation of amorphous structures: The case of a-Si:H Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.184202  0.77
2016 Prasai K, Biswas P, Drabold DA. Electrons and phonons in amorphous semiconductors Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/7/073002  0.73
2016 Prasai K, Biswas P, Drabold DA. Electronically designed amorphous carbon and silicon Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532973  0.718
2015 Prasai K, Biswas P, Drabold DA. Sculpting the band gap: a computational approach. Scientific Reports. 5: 15522. PMID 26490203 DOI: 10.1038/Srep15522  0.713
2015 Biswas P, Elliott SR. Nanoscale structure of microvoids in a-Si:H: a first-principles study. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 435201. PMID 26448500 DOI: 10.1088/0953-8984/27/43/435201  0.391
2015 Biswas P, Drabold DA. Correlations between higher-order rings and microvoids in hydrogenated amorphous silicon Materials Research Society Symposium Proceedings. 1757: 26-31. DOI: 10.1557/Opl.2015.47  0.738
2015 Pandey A, Biswas P, Drabold DA. Force-enhanced atomic refinement: Structural modeling with interatomic forces in a reverse Monte Carlo approach applied to amorphous Si and SiO2 Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.155205  0.7
2014 Biswas P, Drabold DA, Atta-Fynn R. Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon Journal of Applied Physics. 116. DOI: 10.1063/1.4905024  0.8
2013 Timilsina R, Biswas P. A study of hydrogen microstructure in amorphous silicon via inversion of nuclear magnetic resonance spectra. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 165801. PMID 23552017 DOI: 10.1088/0953-8984/25/16/165801  0.807
2013 Timilsina R, Biswas P. A study of hydrogen microstructure in amorphous silicon via inversion of nuclear magnetic resonance spectra Journal of Physics Condensed Matter. 25. DOI: 10.1088/0953-8984/25/16/165801  0.8
2011 Biswas P, Timilsina R. Vacancies, microstructure and the moments of nuclear magnetic resonance: the case of hydrogenated amorphous silicon. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 065801. PMID 21406933 DOI: 10.1088/0953-8984/23/6/065801  0.788
2010 Timilsina R, Biswas P. Theoretical study of hydrogen microstructure in models of hydrogenated amorphous silicon Physica Status Solidi (a) Applications and Materials Science. 207: 609-612. DOI: 10.1002/Pssa.200982869  0.797
2009 Atta-Fynn R, Biswas P. Atomistic modeling of amorphous silicon carbide: an approximate first-principles study in constrained solution space. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 265801. PMID 21828477 DOI: 10.1088/0953-8984/21/26/265801  0.773
2009 Biswas P, Tafen DN, Inam F, Cai B, Drabold DA. Materials modeling by design: applications to amorphous solids. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 084207. PMID 21817359 DOI: 10.1088/0953-8984/21/8/084207  0.719
2008 Biswas P, Drabold DA. Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2 Journal of Non-Crystalline Solids. 354: 2697-2701. DOI: 10.1016/J.Jnoncrysol.2007.09.043  0.747
2007 Biswas P, Atta-Fynn R, Drabold DA. Experimentally constrained molecular relaxation: The case of hydrogenated amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.125210  0.814
2007 Biswas P, Atta-Fynn R, Chakraborty S, Drabold DA. Real space information from fluctuation electron microscopy: Applications to amorphous silicon Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/45/455202  0.795
2005 Bandyopadhyay K, Bhattacharya AK, Biswas P, Drabold DA. Maximum entropy and the problem of moments: a stable algorithm. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 71: 057701. PMID 16089706 DOI: 10.1103/Physreve.71.057701  0.624
2005 Biswas P, Tafen DN, Drabold DA. Experimentally constrained molecular relaxation: The case of glassy GeSe 2 Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.054204  0.709
2004 Atta-Fynn R, Biswas P, Drabold DA. Electron-phonon coupling is large for localized states Physical Review B - Condensed Matter and Materials Physics. 69: 245204-1-245204-5. DOI: 10.1103/Physrevb.69.245204  0.781
2004 Biswas P, Atta-Fynn R, Drabold DA. Reverse Monte Carlo modeling of amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 69: 195207-1-195207-5. DOI: 10.1103/Physrevb.69.195207  0.818
2004 Atta-Fynn R, Biswas P, Ordejón P, Drabold DA. Systematic study of electron localization in an amorphous semiconductor Physical Review B - Condensed Matter and Materials Physics. 69: 852071-8520710. DOI: 10.1103/Physrevb.69.085207  0.786
2004 Biswas P, De Tafen N, Atta-Fynn R, Drabold D. The inclusion of experimental information in first principles modelling of materials Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/44/014  0.804
2004 Biswas P, Atta-Fynn R, Drabold DA. Constrained Monte Carlo approach to modeling disordered materials Microscopy and Microanalysis. 10: 804-805. DOI: 10.1017/S1431927604884460  0.763
2001 Barkema GT, Mousseau N, Vink RLC, Biswas P. Basic mechanisms of structural relaxation and diffusion in amorphous silicon Materials Research Society Symposium - Proceedings. 664. DOI: 10.1557/Proc-664-A28.1  0.351
2001 Biswas P. Electronic structure and the nature of electronic states of amorphous silicon Physics Letters, Section a: General, Atomic and Solid State Physics. 282: 294-298. DOI: 10.1016/S0375-9601(01)00205-5  0.338
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