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Shengbai Zhang - Publications

Affiliations: 
Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
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Year Citation  Score
2023 Cai M, Miao MP, Liang Y, Jiang Z, Liu ZY, Zhang WH, Liao X, Zhu LF, West D, Zhang S, Fu YS. Manipulating single excess electrons in monolayer transition metal dihalide. Nature Communications. 14: 3691. PMID 37344472 DOI: 10.1038/s41467-023-39360-1  0.655
2022 Besse R, Wang H, West D, Da Silva JLF, Zhang S. Prediction of Effective Photoelectron and Hole Separation in Type-I MoS/PtSe van der Waals Junction. The Journal of Physical Chemistry Letters. 6407-6411. PMID 35802831 DOI: 10.1021/acs.jpclett.2c01526  0.69
2021 Ciesler M, West D, Zhang S. Ligand-Assisted Charge-Transfer Mechanism: The Case of CdSe/Cysteine/MoS Heterostructures. The Journal of Physical Chemistry Letters. 12329-12335. PMID 34935388 DOI: 10.1021/acs.jpclett.1c03232  0.624
2021 Han N, Xie W, Zhang J, Liu L, Zhao J, West D, Zhang S. Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer-Bilayer Lateral Junction of MoSe. The Journal of Physical Chemistry Letters. 12: 8046-8052. PMID 34433273 DOI: 10.1021/acs.jpclett.1c02457  0.632
2021 Ghoshal D, Shang H, Sun X, Wen X, Chen D, Wang T, Lu Z, Gupta T, Efstathiadis H, West D, Koratkar N, Lu TM, Zhang S, Shi SF. Orientation-Controlled Large-Area Epitaxial PbI Thin Films with Tunable Optical Properties. Acs Applied Materials & Interfaces. PMID 34196518 DOI: 10.1021/acsami.1c05734  0.601
2021 Yang G, Wang R, Ge M, Guo M, Wang J, Ma R, Zhang J, West D, Zhang S. Switchable electronic and enhanced magnetic properties of CrI edges. Physical Chemistry Chemical Physics : Pccp. PMID 33899853 DOI: 10.1039/d0cp06155g  0.64
2021 Qin L, Zhang ZH, Jiang Z, Fan K, Zhang WH, Tang QY, Xia HN, Meng F, Zhang Q, Gu L, West D, Zhang S, Fu YS. Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material. Acs Nano. PMID 33723991 DOI: 10.1021/acsnano.1c00470  0.647
2021 Zhang H, Holbrook M, Cheng F, Nam H, Liu M, Pan CR, West D, Zhang S, Chou MY, Shih CK. Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO. Acs Nano. PMID 33481561 DOI: 10.1021/acsnano.0c06596  0.742
2020 Chaste J, Hnid I, Khalil L, Si C, Durnez A, Lafosse X, Zhao MQ, Johnson ATC, Zhang S, Bang J, Ouerghi A. Phase Transition in a Memristive Suspended MoS Monolayer Probed by Opto- and Electro-Mechanics. Acs Nano. PMID 33054170 DOI: 10.1021/acsnano.0c05721  0.669
2020 Wei X, Hui H, Perera S, Sheng A, Watson DF, Sun YY, Jia Q, Zhang S, Zeng H. Ti-Alloying of BaZrS Chalcogenide Perovskite for Photovoltaics. Acs Omega. 5: 18579-18583. PMID 32775859 DOI: 10.1021/acsomega.0c00740  0.618
2020 Cheng K, Wang H, Bang J, West D, Zhao J, Zhang S. Carrier Dynamics and Transfer Across the CdS/MoS Interface Upon Optical Excitation. The Journal of Physical Chemistry Letters. PMID 32693591 DOI: 10.1021/Acs.Jpclett.0C01188  0.785
2020 Jiang Z, Lou W, Liu Y, Li Y, Song H, Chang K, Duan W, Zhang S. Spin-Triplet Excitonic Insulator: The Case of Semihydrogenated Graphene. Physical Review Letters. 124: 166401. PMID 32383949 DOI: 10.1103/Physrevlett.124.166401  0.415
2020 Zhou J, Xie Y, Zhang S, Chen Y. Critical topological nodal points and nodal lines/rings in Kagome graphene. Physical Chemistry Chemical Physics : Pccp. PMID 32270831 DOI: 10.1039/D0Cp00190B  0.379
2020 Ma J, Wang H, Nie S, Yi C, Xu Y, Li H, Jandke J, Wulfhekel W, Huang Y, West D, Richard P, Chikina A, Strocov VN, Mesot J, Weng H, ... Zhang S, et al. Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic EuCd As. Advanced Materials (Deerfield Beach, Fla.). e1907565. PMID 32091144 DOI: 10.1002/Adma.201907565  0.692
2020 Fratanduono DE, Smith RF, Ali SJ, Braun DG, Fernandez-Pañella A, Zhang S, Kraus RG, Coppari F, McNaney JM, Marshall MC, Kirch LE, Swift DC, Millot M, Wicks JK, Eggert JH. Probing the Solid Phase of Noble Metal Copper at Terapascal Conditions. Physical Review Letters. 124: 015701. PMID 31976690 DOI: 10.1103/Physrevlett.124.015701  0.326
2020 Chen J, Xie W, Li K, Zhang S, Sun Y. Benchmarking PBE+D3 and SCAN+rVV10 methods using potential energy surfaces generated with MP2+ΔCCSD(T) calculation Chinese Physics B. 29: 13102. DOI: 10.1088/1674-1056/Ab5Fbb  0.603
2020 Lian Z, Jiang Z, Wang T, Blei M, Qin Y, Washington M, Lu T, Tongay S, Zhang S, Shi S. Anisotropic band structure of TiS3 nanoribbon revealed by polarized photocurrent spectroscopy Applied Physics Letters. 117: 073101. DOI: 10.1063/5.0019828  0.379
2020 Wang R, Su Y, Yang G, Zhang J, Zhang S. Bipolar Doping by Intrinsic Defects and Magnetic Phase Instability in Monolayer CrI3 Chemistry of Materials. 32: 1545-1552. DOI: 10.1021/Acs.Chemmater.9B04645  0.379
2020 Chen Y, Xie Y, Yan X, Cohen ML, Zhang S. Topological carbon materials: A new perspective Physics Reports. 868: 1-32. DOI: 10.1016/J.Physrep.2020.05.003  0.448
2020 Wei X, Hui H, Zhao C, Deng C, Han M, Yu Z, Sheng A, Roy P, Chen A, Lin J, Watson DF, Sun Y, Thomay T, Yang S, Jia Q, ... Zhang S, et al. Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics Nano Energy. 68: 104317. DOI: 10.1016/J.Nanoen.2019.104317  0.632
2020 Chai J, Shao Z, Wang H, Ming C, Oh W, Ye T, Zhang Y, Cao X, Jin P, Zhang S, Sun Y. Ultrafast processes in photochromic material YH x O y studied by excited-state density functional theory simulation Science China. Materials. 63: 1579-1587. DOI: 10.1007/S40843-020-1343-X  0.644
2020 Gao Y, Zhang Y, Sun J, Zhang L, Zhang S, Du S. Quantum anomalous Hall effect in two-dimensional Cu-dicyanobenzene coloring-triangle lattice Nano Research. 13: 1571-1575. DOI: 10.1007/S12274-020-2772-2  0.69
2020 Gupta T, Ghoshal D, Yoshimura A, Basu S, Chow PK, Lakhnot AS, Pandey J, Warrender JM, Efstathiadis H, Soni A, Osei‐Agyemang E, Balasubramanian G, Zhang S, Shi S, Lu T, et al. An Environmentally Stable and Lead‐Free Chalcogenide Perovskite Advanced Functional Materials. 30: 2001387. DOI: 10.1002/Adfm.202001387  0.31
2019 Wang H, Qiu Z, Xia W, Ming C, Han Y, Cao L, Lu J, Zhang P, Zhang S, Xu H, Sun YY. Correction to "Semimetal or Semiconductor: The Nature of High Intrinsic Electrical Conductivity in TiS". The Journal of Physical Chemistry Letters. 160. PMID 31846334 DOI: 10.1021/Acs.Jpclett.9B03400  0.635
2019 Wang C, Li A, Li C, Zhang S, Li H, Zhou X, Hu L, Feng Y, Wang K, Zhu Z, Shao R, Chen Y, Gao P, Mao S, Huang J, et al. Ultrahigh Photocatalytic Rate at a Single-Metal-Atom-Oxide. Advanced Materials (Deerfield Beach, Fla.). e1903491. PMID 31725182 DOI: 10.1002/Adma.201903491  0.34
2019 Wang H, Qiu Z, Xia W, Ming C, Han Y, Cao L, Lu J, Zhang P, Zhang S, Xu H, Sun YY. Semimetal or Semiconductor: the Nature of High Intrinsic Electrical Conductivity in TiS. The Journal of Physical Chemistry Letters. PMID 31652068 DOI: 10.1021/Acs.Jpclett.9B02710  0.688
2019 Tan H, Liu H, Li Y, Duan W, Zhang S. Understanding the origin of bandgap problem in transition and post-transition metal oxides. The Journal of Chemical Physics. 151: 124703. PMID 31575162 DOI: 10.1063/1.5111188  0.368
2019 Chai J, Zheng Z, Pan H, Zhang S, Lakshmi KV, Sun YY. Correction: Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective. Physical Chemistry Chemical Physics : Pccp. PMID 31552964 DOI: 10.1039/C9Cp90238D  0.601
2019 Jiang Z, Li Y, Duan W, Zhang S. Half-Excitonic Insulator: A Single-Spin Bose-Einstein Condensate. Physical Review Letters. 122: 236402. PMID 31298916 DOI: 10.1103/Physrevlett.122.236402  0.379
2019 Si C, Choe DH, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photo-Induced Vacancy Ordering and Phase Transition in MoTe2. Nano Letters. PMID 31096752 DOI: 10.1021/Acs.Nanolett.9B00613  0.769
2019 Chai J, Zheng Z, Pan H, Zhang S, Lakshmi KV, Sun YY. Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective. Physical Chemistry Chemical Physics : Pccp. PMID 30968099 DOI: 10.1039/c9cp00868c  0.589
2019 Zhang SB, Jackson WB, Chadi DJ. Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in Si. Physical Review Letters. 65: 2575-2578. PMID 10042632 DOI: 10.1103/Physrevlett.65.2575  0.349
2019 Xiao C, Wang X, Pi X, Yang SA, Feng Y, Lu Y, Zhang S. Spontaneous symmetry lowering of Si (001) towards two-dimensional ferro/antiferroelectric behavior Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.044410  0.374
2018 Lei SY, Shen HY, Sun YY, Wan N, Yu H, Zhang S. Enhancing the ambient stability of few-layer black phosphorus by surface modification. Rsc Advances. 8: 14676-14683. PMID 35540766 DOI: 10.1039/c8ra00560e  0.593
2018 Choe DH, West D, Zhang S. Band Alignment and the Built-in Potential of Solids. Physical Review Letters. 121: 196802. PMID 30468617 DOI: 10.1103/Physrevlett.121.196802  0.803
2018 Chen L, Liu J, Jiang C, Zhao K, Chen H, Shi X, Chen L, Sun C, Zhang S, Wang Y, Zhang Z. Nanoscale Behavior and Manipulation of the Phase Transition in Single-Crystal Cu Se. Advanced Materials (Deerfield Beach, Fla.). e1804919. PMID 30422346 DOI: 10.1002/Adma.201804919  0.3
2018 Lin Z, Choi JH, Zhang Q, Qin W, Yi S, Wang P, Li L, Wang Y, Zhang H, Sun Z, Wei L, Zhang S, Guo T, Lu Q, Cho JH, et al. Flatbands and Emergent Ferromagnetic Ordering in Fe_{3}Sn_{2} Kagome Lattices. Physical Review Letters. 121: 096401. PMID 30230862 DOI: 10.1103/Physrevlett.121.096401  0.392
2018 Li Z, Wang T, Lu Z, Jin C, Chen Y, Meng Y, Lian Z, Taniguchi T, Watanabe K, Zhang S, Smirnov D, Shi SF. Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe. Nature Communications. 9: 3719. PMID 30213927 DOI: 10.1038/S41467-018-05863-5  0.39
2018 Lu Z, Sun X, Xue W, Littlejohn A, Wang GC, Zhang S, Washington MA, Lu TM. Remote epitaxy of copper on sapphire through monolayer graphene buffer. Nanotechnology. PMID 30124437 DOI: 10.1088/1361-6528/Aadb78  0.302
2018 Li Y, Wang T, Wang H, Li Z, Chen Y, West D, Sankar R, Ulaganathan RK, Chou FC, Wetzel C, Xu CY, Zhang S, Shi S. Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes. Nano Letters. PMID 30021441 DOI: 10.1021/Acs.Nanolett.8B01940  0.699
2018 Zheng F, Zhao J, Liu Z, Li M, Zhou M, Zhang S, Zhang P. Tunable spin states in the two-dimensional magnet CrI. Nanoscale. PMID 30015343 DOI: 10.1039/C8Nr03230K  0.326
2018 Zhu Z, Cui P, Cai X, Xia M, Jia Y, Zhang S, Zhang Z. Red phosphorus in its two-dimensional limit: novel clathrates with varying band gaps and superior chemical stabilities. Nanoscale. PMID 30009303 DOI: 10.1039/C8Nr02877J  0.385
2018 Chen NK, Li XB, Bang J, Wang XP, Han D, West D, Zhang S, Sun HB. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701. PMID 29775378 DOI: 10.1103/Physrevlett.120.185701  0.76
2018 Li X, Li B, Fan X, Wei L, Li L, Tao R, Zhang X, Zhang H, Zhang Q, Zhu H, Zhang S, Zhang Z, Zeng C. Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties. Nanoscale. PMID 29701214 DOI: 10.1039/C8Nr02005A  0.358
2018 Xie SY, Wang L, Liu F, Li XB, Bai L, Prakapenka VB, Cai Z, Mao HK, Zhang S, Liu H. Correlated High-Pressure Phase Sequence of VO under Strong Compression. The Journal of Physical Chemistry Letters. PMID 29669204 DOI: 10.1021/Acs.Jpclett.8B00771  0.307
2018 Zhang J, Xie W, Agiorgousis ML, Choe DH, Meunier V, Xu X, Zhao J, Zhang S. Quantum oscillation in carrier transport in two-dimensional junctions. Nanoscale. PMID 29666851 DOI: 10.1039/C8Nr01359D  0.765
2018 Chen N, Li X, Wang X, Xie S, Tian WQ, Zhang S, Sun H. Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146] Ieee Transactions On Nanotechnology. 17: 614-614. DOI: 10.1109/Tnano.2018.2823098  0.303
2018 Chen N, Li X, Wang X, Xie S, Tian WQ, Zhang S, Sun H. Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study Ieee Transactions On Nanotechnology. 17: 140-146. DOI: 10.1109/Tnano.2017.2779579  0.418
2018 Zhang W, West D, Lee SH, Qiu Y, Chang C, Moodera JS, Hor YS, Zhang S, Wu W. Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3 Physical Review B. 98. DOI: 10.1103/Physrevb.98.115165  0.659
2018 Jiang Z, Li Y, Zhang S, Duan W. Realizing an intrinsic excitonic insulator by decoupling exciton binding energy from the minimum band gap Physical Review B. 98: 81408. DOI: 10.1103/Physrevb.98.081408  0.404
2018 Lucking MC, Zheng F, Han MJ, Bang J, Zhang S. Doping-induced antiferromagnetic bicollinear insulating state and superconducting temperature of monolayer FeSe systems Physical Review B. 98. DOI: 10.1103/Physrevb.98.014504  0.678
2018 Gao Y, Chen Y, Xie Y, Chang P, Cohen ML, Zhang S. A class of topological nodal rings and its realization in carbon networks Physical Review B. 97. DOI: 10.1103/Physrevb.97.121108  0.443
2018 Chen Y, Chen N, Chen B, Zhang Q, Li X, Deng Q, Zhang B, Zhang S, Zhang Z, Han X. Electrical properties and structural transition of Ge2Sb2Te5 adjusted by rare-earth element Gd for nonvolatile phase-change memory Journal of Applied Physics. 124: 145107. DOI: 10.1063/1.5040988  0.364
2018 Lei S, Shen H, Sun Y, Wan N, Yu H, Zhang S. Enhancing the ambient stability of few-layer black phosphorus by surface modification Rsc Advances. 8: 14676-14683. DOI: 10.1039/C8Ra00560E  0.621
2018 Agiorgousis ML, Sun Y, West D, Zhang S. Intercalated Chevrel Phase Mo6S8 as a Janus Material for Energy Generation and Storage Acs Applied Energy Materials. 1: 440-446. DOI: 10.1021/Acsaem.7B00092  0.658
2018 Chen N, Li X, Wang X, Tian WQ, Zhang S, Sun H. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy Acta Materialia. 143: 102-106. DOI: 10.1016/J.Actamat.2017.10.013  0.331
2018 Wang G, Xie W, Xu D, Ma H, Yang H, Lu H, Sun H, Li Y, Jia S, Fu L, Zhang S, Jia J. Formation mechanism of twin domain boundary in 2D materials: The case for WTe2 Nano Research. 12: 569-573. DOI: 10.1007/S12274-018-2255-X  0.317
2018 Liu Q, Han N, Zhang S, Zhao J, Yang F, Bao X. Tuning the structures of two-dimensional cuprous oxide confined on Au(111) Nano Research. 11: 5957-5967. DOI: 10.1007/S12274-018-2109-6  0.346
2017 Wang J, Sui X, Shi W, Pan J, Zhang S, Liu F, Wei SH, Yan Q, Huang B. Prediction of Ideal Topological Semimetals with Triply Degenerate Points in the NaCu_{3}Te_{2} Family. Physical Review Letters. 119: 256402. PMID 29303319 DOI: 10.1103/Physrevlett.119.256402  0.338
2017 Chen NK, Han D, Li XB, Liu F, Bang J, Wang XP, Chen QD, Wang HY, Zhang S, Sun HB. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Physical Chemistry Chemical Physics : Pccp. PMID 28861554 DOI: 10.1039/C7Cp03103C  0.698
2017 Wang Y, Sun X, Chen Z, Sun YY, Zhang S, Lu TM, Wertz E, Shi J. High-Temperature Ionic Epitaxy of Halide Perovskite Thin Film and the Hidden Carrier Dynamics. Advanced Materials (Deerfield Beach, Fla.). PMID 28719021 DOI: 10.1002/Adma.201702643  0.637
2017 Zhong C, Chen Y, Yu ZM, Xie Y, Wang H, Yang SA, Zhang S. Three-dimensional Pentagon Carbon with a genesis of emergent fermions. Nature Communications. 8: 15641. PMID 28580929 DOI: 10.1038/Ncomms15641  0.404
2017 Zhong C, Chen Y, Xie Y, Sun YY, Zhang S. Semi-Dirac semimetal in silicene oxide. Physical Chemistry Chemical Physics : Pccp. PMID 28102377 DOI: 10.1039/C6Cp08439G  0.655
2017 Gao N, Yang L, Gao F, Kurtz R, West D, Zhang S. Long-time atomistic dynamics through a new self-adaptive accelerated molecular dynamics method. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 28059774 DOI: 10.1088/1361-648X/Aa574B  0.641
2017 Xie W, Lu T, Wang G, Bhat I, Zhang S. Enhanced van der Waals epitaxy via electron transfer-enabled interfacial dative bond formation Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.063402  0.362
2017 Wang D, Han D, Li X, Chen N, West D, Meunier V, Zhang S, Sun H. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus Physical Review B. 96. DOI: 10.1103/Physrevb.96.155424  0.644
2017 Gross N, Sun Y, Perera S, Hui H, Wei X, Zhang S, Zeng H, Weinstein B. Stability and Band-Gap Tuning of the Chalcogenide Perovskite BaZrS3 in Raman and Optical Investigations at High Pressures Physical Review Applied. 8. DOI: 10.1103/Physrevapplied.8.044014  0.647
2017 Agiorgousis ML, Sun Y, Zhang S. The Role of Ionic Liquid Electrolyte in an Aluminum–Graphite Electrochemical Cell Acs Energy Letters. 2: 689-693. DOI: 10.1021/Acsenergylett.7B00110  0.616
2017 Li W, Ma Y, Yang S, Gong J, Zhang S, Xiao X. Nanoscopic study of the compositions, structures, and electronic properties of grain boundaries in Cu(InGa)Se2 photovoltaic thin films Nano Energy. 33: 157-167. DOI: 10.1016/J.Nanoen.2017.01.041  0.321
2017 Wang F, Li F, Zhang L, Zeng H, Sun Y, Zhang S, Xu X. S-TiO 2 with enhanced visible-light photocatalytic activity derived from TiS 2 in deionized water Materials Research Bulletin. 87: 20-26. DOI: 10.1016/J.Materresbull.2016.11.014  0.622
2017 Palakawong N, Sun Y, T-Thienprasert J, Zhang S, Limpijumnong S. Ga acceptor defects in SnO2 revisited: A hybrid functional study Ceramics International. 43. DOI: 10.1016/J.Ceramint.2017.05.235  0.352
2017 Lu C, Yang H, Xu J, Xu L, Chshiev M, Zhang S, Gu C. Spontaneous formation of graphene on diamond (111) driven by B-doping induced surface reconstruction Carbon. 115: 388-393. DOI: 10.1016/J.Carbon.2017.01.030  0.345
2017 Wang X, Li X, Chen N, Chen Q, Han X, Zhang S, Sun H. Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory Acta Materialia. 136: 242-248. DOI: 10.1016/J.Actamat.2017.07.006  0.306
2016 Cheng S, Lu J, Han D, Liu M, Lu X, Ma C, Zhang S, Chen C. Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films. Scientific Reports. 6: 37496. PMID 27876830 DOI: 10.1038/Srep37496  0.334
2016 Ma C, Han D, Liu M, Collins G, Wang H, Xu X, Lin Y, Jiang J, Zhang S, Chen C. Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3. Scientific Reports. 6: 37337. PMID 27869137 DOI: 10.1038/Srep37337  0.335
2016 Wang Y, Seewald L, Sun YY, Keblinski P, Sun X, Zhang S, Lu TM, Johnson JM, Hwang J, Shi J. Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide. Advanced Materials (Deerfield Beach, Fla.). PMID 27572096 DOI: 10.1002/Adma.201602178  0.645
2016 Han D, Bang J, Xie W, Meunier V, Zhang S. Phonon-enabled Carrier Transport of Localized States at Non-polar Semiconductor Surfaces: A First-principles Based Prediction. The Journal of Physical Chemistry Letters. PMID 27552528 DOI: 10.1021/Acs.Jpclett.6B01608  0.705
2016 Sun YY, Zhang S. Communication: Effect of accidental mode degeneracy on Raman intensity in 2D materials: Hybrid functional study of bilayer phosphorene. The Journal of Chemical Physics. 145: 021102. PMID 27421389 DOI: 10.1063/1.4958460  0.619
2016 Gao Y, Chen Y, Zhong C, Zhang Z, Xie Y, Zhang S. Electron and phonon properties and gas storage in carbon honeycombs. Nanoscale. PMID 27315245 DOI: 10.1039/C6Nr03655D  0.319
2016 Wang H, Bang J, Sun Y, Liang L, West D, Meunier V, Zhang S. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures. Nature Communications. 7: 11504. PMID 27160484 DOI: 10.1038/Ncomms11504  0.78
2016 Lei SY, Wang H, Huang L, Sun YY, Zhang S. Stacking fault enriching the electronic and transport properties of few-layer phosphorenes and black phosphorus. Nano Letters. PMID 26799596 DOI: 10.1021/Acs.Nanolett.5B04719  0.683
2016 Sun YY, Zhang S. Kinetics stabilized doping: computational optimization of carbon-doped anatase TiO2 for visible-light driven water splitting. Physical Chemistry Chemical Physics : Pccp. PMID 26725589 DOI: 10.1039/C5Cp07109G  0.645
2016 Wang N, Sun Y, Zhang Y, West D, Duan W, Zhang S. Stability investigations on the non-vdW-exfoliated surfaces of the topological insulator Bi2Te3: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.115306  0.768
2016 Gao W, Gao X, Abtew TA, Sun YY, Zhang S, Zhang P. Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.085202  0.667
2016 Zhang J, Xie W, Zhao J, Zhang S. Band alignment of two-dimensional lateral heterostructures 2d Materials. 4: 015038. DOI: 10.1088/2053-1583/Aa50Cc  0.342
2016 Li F, Zhang Q, Tang C, Liu C, Shi J, Nie CN, Zhou G, Li Z, Zhang W, Song CL, He K, Ji S, Zhang S, Gu L, Wang L, et al. Atomically resolved FeSe/SrTiO3(001) interface structure by scanning transmission electron microscopy 2d Materials. 3. DOI: 10.1088/2053-1583/3/2/024002  0.371
2016 Wang D, Han D, Li X, Xie S, Chen N, Tian WQ, Zhang S, Sun H. Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation Applied Physics Letters. 109: 203113. DOI: 10.1063/1.4967981  0.356
2016 Gu C, Li W, Xu J, Xu S, Lu C, Xu L, Li J, Zhang S. Graphene grown out of diamond Applied Physics Letters. 109: 162105. DOI: 10.1063/1.4964710  0.333
2016 Mohanty D, Xie W, Wang Y, Lu Z, Shi J, Zhang S, Wang GC, Lu TM, Bhat IB. Van der Waals epitaxy of CdTe thin film on graphene Applied Physics Letters. 109. DOI: 10.1063/1.4964127  0.328
2016 Zhang B, Zhang W, Shen Z, Chen Y, Li J, Zhang S, Zhang Z, Wuttig M, Mazzarello R, Ma E, Han X. Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material Applied Physics Letters. 108. DOI: 10.1063/1.4949011  0.369
2016 Wang Y, Sun YY, Zhang S, Lu TM, Shi J. Band gap engineering of a soft inorganic compound PbI2 by incommensurate van der Waals epitaxy Applied Physics Letters. 108. DOI: 10.1063/1.4939269  0.642
2016 Zheng Z, Sun Y, Xie W, Zhao J, Zhang S. Solvent-Based Atomistic Theory for Doping Colloidal-Synthesized Quantum Dots via Cation Exchange The Journal of Physical Chemistry C. 120: 27085-27090. DOI: 10.1021/Acs.Jpcc.6B11150  0.656
2016 Zhang J, Xie W, Xu X, Zhang S, Zhao J. Structural and Electronic Properties of Interfaces in Graphene and Hexagonal Boron Nitride Lateral Heterostructures Chemistry of Materials. 28: 5022-5028. DOI: 10.1021/Acs.Chemmater.6B01764  0.432
2016 Xie W, Lucking M, Chen L, Bhat I, Wang GC, Lu TM, Zhang S. Modular Approach for Metal-Semiconductor Heterostructures with Very Large Interface Lattice Misfit: A First-Principles Perspective Crystal Growth and Design. 16: 2328-2334. DOI: 10.1021/Acs.Cgd.6B00118  0.346
2016 Gao W, Abtew TA, Cai T, Sun YY, Zhang S, Zhang P. On the applicability of hybrid functionals for predicting fundamental properties of metals Solid State Communications. 234: 10-13. DOI: 10.1016/J.Ssc.2016.02.014  0.644
2016 Perera S, Hui H, Zhao C, Xue H, Sun F, Deng C, Gross N, Milleville C, Xu X, Watson DF, Weinstein B, Sun YY, Zhang S, Zeng H. Chalcogenide perovskites - an emerging class of ionic semiconductors Nano Energy. 22: 129-135. DOI: 10.1016/J.Nanoen.2016.02.020  0.668
2016 Zhong C, Xie Y, Chen Y, Zhang S. Coexistence of flat bands and Dirac bands in a carbon-Kagome-lattice family Carbon. 99: 65-70. DOI: 10.1016/J.Carbon.2015.11.073  0.362
2015 Chen YP, Xie Y, Yang SA, Pan H, Zhang F, Cohen ML, Zhang S. Nanostructured carbon allotropes with Weyl-like loops and points. Nano Letters. PMID 26426355 DOI: 10.1021/Acs.Nanolett.5B02978  0.506
2015 Sun YY, Shi J, Lian J, Gao W, Agiorgousis ML, Zhang P, Zhang S. Discovering lead-free perovskite solar materials with a split-anion approach. Nanoscale. PMID 26349623 DOI: 10.1039/C5Nr04310G  0.629
2015 Liu W, West D, He L, Xu Y, Liu J, Wang K, Wang Y, van der Laan G, Zhang R, Zhang S, Wang KL. Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators. Acs Nano. PMID 26348798 DOI: 10.1021/Acsnano.5B03980  0.646
2015 Wang F, Sun YY, Hatch JB, Xing H, Zhu X, Zhang H, Xu X, Luo H, Perera S, Zhang S, Zeng H. Realizing chemical codoping in TiO2. Physical Chemistry Chemical Physics : Pccp. 17: 17989-94. PMID 26096158 DOI: 10.1039/C5Cp02020D  0.656
2015 Lucking M, Sun YY, West D, Zhang S. A nucleus-coupled electron transfer mechanism for TiO2-catalyzed water splitting. Physical Chemistry Chemical Physics : Pccp. 17: 16779-83. PMID 26050615 DOI: 10.1039/C5Cp01202C  0.76
2015 Jiang Y, Zhang X, Wang Y, Wang N, West D, Zhang S, Zhang Z. Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates. Nano Letters. 15: 3147-52. PMID 25919088 DOI: 10.1021/Acs.Nanolett.5B00240  0.629
2015 Sun YY, Agiorgousis ML, Zhang P, Zhang S. Chalcogenide perovskites for photovoltaics. Nano Letters. 15: 581-5. PMID 25548882 DOI: 10.1021/Nl504046X  0.631
2015 Xie SY, Li XB, Tian WQ, Chen NK, Wang Y, Zhang S, Sun HB. A novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice. Physical Chemistry Chemical Physics : Pccp. 17: 1093-8. PMID 25414074 DOI: 10.1039/C4Cp03728F  0.368
2015 Bang J, Sun YY, West D, Meyer BK, Zhang S. Molecular doping of ZnO by ammonia: A possible shallow acceptor Journal of Materials Chemistry C. 3: 339-344. DOI: 10.1039/C4Tc02209B  0.783
2015 Lucking MC, Bang J, Terrones H, Sun YY, Zhang S. Multivalency-induced band gap opening at MoS2 edges Chemistry of Materials. 27: 3326-3331. DOI: 10.1021/Acs.Chemmater.5B00398  0.787
2015 Li F, Jiang X, Zhao J, Zhang S. Graphene oxide: A promising nanomaterial for energy and environmental applications Nano Energy. 16: 488-515. DOI: 10.1016/J.Nanoen.2015.07.014  0.329
2015 Chen NK, Li XB, Wang XP, Xia MJ, Xie SY, Wang HY, Song Z, Zhang S, Sun HB. Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization Acta Materialia. 90: 88-93. DOI: 10.1016/J.Actamat.2015.02.015  0.354
2015 Su PY, Dahal R, Wang GC, Zhang S, Lu TM, Bhat IB. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications Journal of Electronic Materials. DOI: 10.1007/S11664-015-3829-Y  0.306
2014 Agiorgousis ML, Sun YY, Zeng H, Zhang S. Strong covalency-induced recombination centers in perovskite solar cell material CH3NH3PbI3. Journal of the American Chemical Society. 136: 14570-5. PMID 25243595 DOI: 10.1021/Ja5079305  0.674
2014 Fang L, Iyer RG, Tan G, West DJ, Zhang S, Kanatzidis MG. The new phase [Tl₄Sb₆Se₁₀][Sn₅Sb₂Se₁₄]: a naturally formed semiconducting heterostructure with two-dimensional conductance. Journal of the American Chemical Society. 136: 11079-84. PMID 25058471 DOI: 10.1021/Ja505301Y  0.686
2014 Xie SY, Li XB, Tian WQ, Chen NK, Zhang XL, Wang Y, Zhang S, Sun HB. First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.035447  0.387
2014 Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih C. Observation of Coulomb repulsion between Cu intercalants inCuxBi2Se3 Physical Review B. 89. DOI: 10.1103/Physrevb.89.155312  0.61
2014 Bang J, Kim Y, Park CH, Gao F, Zhang SB. Understanding the presence of vacancy clusters in ZnO from a kinetic perspective Applied Physics Letters. 104: 252101. DOI: 10.1063/1.4884653  0.655
2014 Lucking M, Sun Y, West D, Zhang S. Absolute redox potential of liquid water: a first-principles theory Chemical Science. 5: 1216-1220. DOI: 10.1039/C3Sc52287C  0.741
2014 Liu X, Sun YY, West D, Gao X, Zhang SB. Modulation of the Band Gap Increase in Nanocrystals by Surface Passivation The Journal of Physical Chemistry C. 118: 14026-14030. DOI: 10.1021/Jp503701K  0.655
2014 Jiang Y, Wang Y, Zhang YY, Zhang Z, Yuan W, Sun C, Wei X, Brodsky CN, Tsung CK, Li J, Zhang X, Mao SX, Zhang S. Direct observation of Pt nanocrystal coalescence induced by electron-excitation-enhanced van der Waals interactions Nano Research. 7: 308-314. DOI: 10.1007/S12274-013-0396-5  0.583
2013 Li L, Wang Y, Xie S, Li XB, Wang YQ, Wu R, Sun H, Zhang S, Gao HJ. Two-dimensional transition metal honeycomb realized: Hf on Ir(111). Nano Letters. 13: 4671-4. PMID 24016148 DOI: 10.1021/Nl4019287  0.547
2013 Wang Z, Gu M, Zhou Y, Zu X, Connell JG, Xiao J, Perea D, Lauhon LJ, Bang J, Zhang S, Wang C, Gao F. Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys. Nano Letters. 13: 4511-6. PMID 23944904 DOI: 10.1021/Nl402429A  0.7
2013 Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih CK. Mapping the 3D surface potential in Bi₂Se₃. Nature Communications. 4: 2277. PMID 23912773 DOI: 10.1038/Ncomms3277  0.663
2013 Jiang Y, Wang Y, Sagendorf J, West D, Kou X, Wei X, He L, Wang KL, Zhang S, Zhang Z. Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators. Nano Letters. 13: 2851-6. PMID 23713705 DOI: 10.1021/Nl401186D  0.69
2013 Bang J, Meng S, Sun YY, West D, Wang Z, Gao F, Zhang SB. Regulating energy transfer of excited carriers and the case for excitation-induced hydrogen dissociation on hydrogenated graphene. Proceedings of the National Academy of Sciences of the United States of America. 110: 908-11. PMID 23277576 DOI: 10.1073/Pnas.1210313110  0.788
2013 Northrup JE, Xie W, Sun Y, Zhang S. Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors: Role of van der Waals Interactions Applied Physics Express. 6: 71601. DOI: 10.7567/Apex.6.071601  0.62
2013 Bang J, Li Z, Sun YY, Samanta A, Zhang YY, Zhang W, Wang L, Chen X, Ma X, Xue Q, Zhang SB. Atomic and electronic structures of single-layer FeSe on SrTiO3(001): The role of oxygen deficiency Physical Review B. 87. DOI: 10.1103/Physrevb.87.220503  0.74
2013 Bang J, Wang Z, Gao F, Meng S, Zhang SB. Suppression of nonradiative recombination in ionic insulators by defects: Role of fast electron trapping in Tl-doped CsI Physical Review B. 87. DOI: 10.1103/Physrevb.87.205206  0.729
2013 Xie W, Bang J, Zhang S. Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors Materials Research Letters. 2: 51-56. DOI: 10.1080/21663831.2013.859639  0.654
2013 Xie W, West DJ, Sun Y, Zhang S. Role of nano in catalysis: Palladium catalyzed hydrogen desorption from nanosized magnesium hydride Nano Energy. 2: 742-748. DOI: 10.1016/J.Nanoen.2012.12.010  0.601
2013 Gao X, Wei Z, Meunier V, Sun Y, Zhang SB. Opening a large band gap for graphene by covalent addition Chemical Physics Letters. 555: 1-6. DOI: 10.1016/J.Cplett.2012.10.069  0.606
2012 Wang Z, Zhou Y, Bang J, Prange M, Zhang S, Gao F. Modification of Defect Structures in Graphene by Electron Irradiation: Ab Initio Molecular Dynamics Simulations The Journal of Physical Chemistry C. 116: 16070-16079. DOI: 10.1021/Jp303905U  0.715
2012 Zheng Z, Zhao J, Sun Y, Zhang S. Structures and lattice energies of molecular crystals using density functional theory: Assessment of a local atomic potential approach Chemical Physics Letters. 550: 94-98. DOI: 10.1016/J.Cplett.2012.09.017  0.631
2011 Wang L, Zhao J, Sun YY, Zhang SB. Characteristics of Raman spectra for graphene oxide from ab initio simulations. The Journal of Chemical Physics. 135: 184503. PMID 22088071 DOI: 10.1063/1.3658859  0.605
2011 Wang L, Zhao J, Wang L, Yan T, Sun YY, Zhang SB. Titanium-decorated graphene oxide for carbon monoxide capture and separation. Physical Chemistry Chemical Physics : Pccp. 13: 21126-31. PMID 22025026 DOI: 10.1039/C1Cp21778J  0.587
2011 Wang G, Zhu XG, Sun YY, Li YY, Zhang T, Wen J, Chen X, He K, Wang LL, Ma XC, Jia JF, Zhang SB, Xue QK. Topological insulator thin films of Bi2Te3 with controlled electronic structure. Advanced Materials (Deerfield Beach, Fla.). 23: 2929-32. PMID 21544877 DOI: 10.1002/Adma.201100678  0.61
2010 Lu T, Li H, Gaire C, LiCausi N, Chan TL, Bhat I, Zhang S, Wang GC. Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee03-06  0.325
2009 Wang L, Lee K, Sun YY, Lucking M, Chen Z, Zhao JJ, Zhang SB. Graphene oxide as an ideal substrate for hydrogen storage. Acs Nano. 3: 2995-3000. PMID 19856979 DOI: 10.1021/Nn900667S  0.592
2008 Li Y, Zhou Z, Zhang S, Chen Z. MoS2 nanoribbons: high stability and unusual electronic and magnetic properties. Journal of the American Chemical Society. 130: 16739-44. PMID 19554733 DOI: 10.1021/Ja805545X  0.384
2008 Du MH, Zhang SB, Northrup JE, Erwin SC. Stabilization mechanisms of polar surfaces: ZnO surfaces Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.155424  0.31
2008 Whitney E, Dillon AC, Curtis C, Engtrakul C, O'Neill K, Davis M, Simpson L, Jones K, Zhao Y, Kim YH, Zhang S, Parilla P. Novel organometallic fullerene complexes for vehicular hydrogen storage Materials Research Society Symposium Proceedings. 1041: 107-116. DOI: 10.1002/Pssb.200776157  0.309
2000 Wei S, Zhang S, Zunger A. Band Structure and Stability of Ternary Semiconductor Polytypes Japanese Journal of Applied Physics. 39: 237. DOI: 10.7567/Jjaps.39S1.237  0.324
1990 García A, Cohen ML, Zhang SB. Theoretical Study of a new Transition Sequence in III-V Compounds: High-Pressure Phases of InSb Mrs Proceedings. 193. DOI: 10.1557/Proc-193-89  0.354
Low-probability matches (unlikely to be authored by this person)
2018 Ren XY, Xia S, Li XB, Chen NK, Wang XP, Wang D, Chen ZG, Zhang S, Sun HB. Non-phase-separated 2D B-C-N alloys via molecule-like carbon doping in 2D BN: atomic structures and optoelectronic properties. Physical Chemistry Chemical Physics : Pccp. PMID 30168546 DOI: 10.1039/C8Cp03028F  0.3
2003 Batyrev IG, Norman AG, Zhang S, Wei S. Quadruple-period ordering in MBE GaAsSb alloys Mrs Proceedings. 794. DOI: 10.1557/Proc-794-T10.5  0.3
2017 Wang L, Guan P, Teng J, Liu P, Chen D, Xie W, Kong D, Zhang S, Zhu T, Zhang Z, Ma E, Chen M, Han X. New twinning route in face-centered cubic nanocrystalline metals. Nature Communications. 8: 2142. PMID 29247224 DOI: 10.1038/S41467-017-02393-4  0.294
2017 Sun X, Lu Z, Xie W, Wang Y, Shi J, Zhang S, Washington MA, Lu T. van der Waals epitaxy of CdS thin films on single-crystalline graphene Applied Physics Letters. 110: 153104. DOI: 10.1063/1.4980088  0.291
2018 Hull R, Keblinski P, Lewis D, Maniatty A, Meunier V, Oberai AA, Picu CR, Samuel J, Shephard MS, Tomozawa M, Vashishth D, Zhang S. Stochasticity in materials structure, properties, and processing-A review. Applied Physics Reviews. 5. PMID 30397419 DOI: 10.1063/1.4998144  0.283
2008 Zhou Z, Li Y, Liu L, Chen Y, Zhang SB, Chen Z. Size- and Surface-dependent Stability, Electronic Properties, and Potential as Chemical Sensors: Computational Studies on One-dimensional ZnO Nanostructures The Journal of Physical Chemistry C. 112: 13926-13931. DOI: 10.1021/Jp803273R  0.278
2013 Yue Y, Chen N, Li X, Zhang S, Zhang Z, Chen M, Han X. Crystalline liquid and rubber-like behavior in Cu nanowires. Nano Letters. 13: 3812-6. PMID 23898785 DOI: 10.1021/Nl401829E  0.277
2017 Yang Y-, Seewald L, Mohanty D, Wang Y, Zhang LH, Kisslinger K, Xie W, Shi J, Bhat I, Zhang S, Lu T-, Wang G-. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate Applied Surface Science. 413: 219-232. DOI: 10.1016/J.Apsusc.2017.03.260  0.276
2008 Han X, Zheng S, Zhang Y, Zheng K, Zhang S, Zhang Z, Zhang X, Liu X, Chen G, Hao Y, Guo X. Polarization driven covalently-bonded octahedral-twinning and backbone-peripheral-helical nanoarchitectures. Nano Letters. 8: 2258-64. PMID 18616328 DOI: 10.1021/Nl080880W  0.274
2018 Chen Y, Xie Y, Gao Y, Chang P, Zhang S, Vanderbilt D. Nexus networks in carbon honeycombs Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.044205  0.272
2007 Du M, Saito S, Zhang S. Unifying Chemical Bonding Models for Boranes Mrs Proceedings. 1038. DOI: 10.1557/Proc-1038-O05-07  0.271
1994 Wei S, Zhang SB, Zunger A. Structural instability in zinc-blende semiconductors Ferroelectrics. 155: 127-132. DOI: 10.1080/00150199408007495  0.266
2019 Zhang SB, Chadi DJ. Microscopic structure of hydrogen-shallow-donor complexes in crystalline silicon. Physical Review. B, Condensed Matter. 41: 3882-3884. PMID 9994202 DOI: 10.1103/Physrevb.41.3882  0.266
2011 Gao X, Jiang D, Zhao Y, Nagase S, Zhang S, Chen Z. Theoretical Insights into the Structures of Graphene Oxide and Its Chemical Conversions Between Graphene Journal of Computational and Theoretical Nanoscience. 8: 2406-2422. DOI: 10.1166/Jctn.2011.1972  0.264
2010 Kim Y, Sun Y, Kang J, Choi W, Lee K, Zhao Y, Zhang S. Ab Initio Search for Hydrogen Storage Nanostructured Materials Microscopy and Microanalysis. 16: 1332-1333. DOI: 10.1017/S1431927610056102  0.263
2014 Zhu M, Xia M, Rao F, Li X, Wu L, Ji X, Lv S, Song Z, Feng S, Sun H, Zhang S. One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Nature Communications. 5: 4086. PMID 25001009 DOI: 10.1038/Ncomms5086  0.254
2019 Briggs R, Gorman MG, Zhang S, McGonegle D, Coleman AL, Coppari F, Morales-Silva MA, Smith RF, Wicks JK, Bolme CA, Gleason AE, Cunningham E, Lee HJ, Nagler B, McMahon MI, et al. Coordination changes in liquid tin under shock compression determined using in situ femtosecond x-ray diffraction Applied Physics Letters. 115: 264101. DOI: 10.1063/1.5127291  0.253
1998 Wei S, Zhang SB, Zunger A. Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties Applied Physics Letters. 72: 3199-3201. DOI: 10.1063/1.121548  0.253
1999 Liu Q, Wei Y, Wang W, Zhang S. Tetraaquabis(4-pyridinecarboxylato-N)iron(II) Acta Crystallographica Section C-Crystal Structure Communications. 55. DOI: 10.1107/S0108270199098741  0.251
2016 Zhang Z, Chen Y, Xie Y, Zhang S. Transition of thermal rectification in silicon nanocones Applied Thermal Engineering. 102: 1075-1080. DOI: 10.1016/J.Applthermaleng.2016.03.083  0.248
2016 Chen L, Xie W, Wang GC, Bhat I, Zhang S, Goyal A, Lu TM. Heteroepitaxy of large grain Ge film on cube-textured Ni(001) foils through CaF2 buffer layer Thin Solid Films. 603: 428-434. DOI: 10.1016/J.Tsf.2016.03.007  0.245
2002 Wei S, Zhang SB. Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe Physical Review B. 66. DOI: 10.1103/Physrevb.66.155211  0.242
2020 McDonald N, Hollingsworth A, Beninati S, Lim C, Ji W, Shi C, Agiorgousis ML, Zhang S, Huang ZR. Analysis of an Ultra-Short True Time Delay Line Optical Reservoir Computer Journal of Lightwave Technology. 38: 3584-3591. DOI: 10.1109/Jlt.2020.2975165  0.242
2019 Chadi DJ, Zhang SB. Vacancy complexes in GaAs: Effects on impurity compensation. Physical Review. B, Condensed Matter. 41: 5444-5446. PMID 9994419 DOI: 10.1103/Physrevb.41.5444  0.241
2008 Herrera M, Ramasse Q, Browning N, Pizarro J, Galindo P, Gonzalez D, Garcia R, Du M, Zhang S, Hopkinson M. High Resolution HAADF-STEM Imaging Analysis of N related defects in GaNAs Quantum Wells Microscopy and Microanalysis. 14: 318-319. DOI: 10.1017/S1431927608082329  0.241
2009 Han Y, Li WY, Cao LX, Zhang S, Xu B, Zhao BR. Preparation and superconductivity of iron selenide thin films. Journal of Physics: Condensed Matter. 21: 235702-235702. PMID 21825594 DOI: 10.1088/0953-8984/21/23/235702  0.24
2019 Zhu Z, Cui P, Jia Y, Zhang S, Zhang Z. Strain in van der Waals epitaxy and evidence for a collective macroscopic effect of a negligibly small perturbation Physical Review B. 100: 35429. DOI: 10.1103/Physrevb.100.035429  0.24
2008 Lee SH, Kim YH, Deshpande R, Parilla PA, Whitney E, Gillaspie DT, Jones KM, Mahan AH, Zhang S, Dillon AC. Reversible lithium-ion insertion in molybdenum oxide nanoparticles Advanced Materials. 20: 3627-3632. DOI: 10.1002/Adma.200800999  0.238
2001 Wei S, Zhang S. First-principles study of cation distribution in eighteen closed-shell AIIB2IIIO4 and AIVB2IIO4 spinel oxides Physical Review B. 63. DOI: 10.1103/Physrevb.63.045112  0.224
2008 Gao X, Zhou Z, Zhao Y, Nagase S, Zhang SB, Chen Z. Comparative Study of Carbon and BN Nanographenes: Ground Electronic States and Energy Gap Engineering The Journal of Physical Chemistry C. 112: 12677-12682. DOI: 10.1021/Jp801679J  0.223
1991 Tarnow E, Zhang SB. Heteroepitaxy of I-VII materials on III-V substrates Applied Physics Letters. 58: 2120-2122. DOI: 10.1063/1.104979  0.221
2017 Guo F, Lu Z, Mohanty D, Wang T, Bhat IB, Zhang S, Shi S, Washington MA, Wang G, Lu T. A two-step dry process for Cs2SnI6 perovskite thin film Materials Research Letters. 5: 540-546. DOI: 10.1080/21663831.2017.1346525  0.22
1998 Zhang SB, Wei S, Zunger A. A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds Journal of Applied Physics. 83: 3192-3196. DOI: 10.1063/1.367120  0.22
2010 Gao X, Zhang SB, Zhao Y, Nagase S. A nanoscale jigsaw-puzzle approach to large π-conjugated systems. Angewandte Chemie (International Ed. in English). 49: 6764-7. PMID 20715034 DOI: 10.1002/Anie.201002617  0.218
2013 Zheng JJ, Zhao X, Zhang SB, Gao X. Tight-binding description of graphyne and its two-dimensional derivatives. The Journal of Chemical Physics. 138: 244708. PMID 23822265 DOI: 10.1063/1.4811841  0.216
2004 Kim Y, Zhao Y, Heben MJ, Zhang SB. Generalized Kubas Complexes as a Novel Means for Room Temperature Molecular Hydrogen Storage Mrs Proceedings. 837. DOI: 10.1557/Proc-837-N3.21  0.207
2024 Bhattarai R, Minch P, Liang Y, Zhang S, Rhone TD. Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiSTe. Physical Chemistry Chemical Physics : Pccp. PMID 38483272 DOI: 10.1039/d3cp05578g  0.206
2007 Allenci A, Guo W, Chen Y, Katz MB, Zhao G, Che Y, Hu Z, Liu B, Zhang SB, Pan X. Amphoteric phosphorus doping for stable p-type ZnO Advanced Materials. 19: 3333-3337. DOI: 10.1002/Adma.200700083  0.206
2018 Xiao C, Wang F, Yang SA, Lu Y, Feng Y, Zhang S. Elemental Ferroelectricity and Antiferroelectricity in Group-V Monolayer Advanced Functional Materials. 28: 1707383. DOI: 10.1002/Adfm.201707383  0.204
2007 Whitney E, Dillon AC, Curtis C, Engtrakul C, O'Neill K, Davis M, Simpson L, Jones K, Zhao Y, Kim Y, Zhang S, Parilla P. Novel Organometallic Fullerene Complexes for Vehicular Hydrogen Storage Mrs Proceedings. 1041. DOI: 10.1557/Proc-1041-R02-06  0.203
2016 Zhang B, Wang XP, Shen ZJ, Li XB, Wang CS, Chen YJ, Li JX, Zhang JX, Zhang Z, Zhang SB, Han XD. Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe. Scientific Reports. 6: 25453. PMID 27140674 DOI: 10.1038/srep25453  0.203
2022 Bian M, Zhu L, Wang X, Choi J, Chopdekar RV, Wei S, Wu L, Huai C, Marga A, Yang Q, Li YC, Yao F, Yu T, Crooker SA, Cheng XM, ... ... Zhang S, et al. Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal. Advanced Materials (Deerfield Beach, Fla.). e2200117. PMID 35236008 DOI: 10.1002/adma.202200117  0.192
2021 Wang XP, Li XB, Chen NK, Chen B, Rao F, Zhang S. Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer SbTe. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 8: 2004185. PMID 34258152 DOI: 10.1002/advs.202004185  0.19
1991 Tarnow E, Zhang S. An Insulating Overlayer for GaAs Mrs Proceedings. 221. DOI: 10.1557/Proc-221-301  0.19
2008 Zhao Y, Lusk MT, Dillon AC, Heben MJ, Zhang SB. Boron-based organometallic nanostructures: hydrogen storage properties and structure stability. Nano Letters. 8: 157-61. PMID 18069871 DOI: 10.1021/Nl072321F  0.187
1990 ZHANG S. CATION ANTISITE DEFECTS AND ANTISITE-BASED-DEFECT COMPLEXES IN GaAs Modern Physics Letters B. 4: 1133-1136. DOI: 10.1142/S0217984990001422  0.184
2011 Gao X, Hodgson JL, Jiang DE, Zhang SB, Nagase S, Miller GP, Chen Z. Open-shell singlet character of stable derivatives of nonacene, hexacene and teranthene. Organic Letters. 13: 3316-9. PMID 21648416 DOI: 10.1021/Ol201004U  0.18
2008 Liu X, Zhang SB, Ma XC, Jia J, Xue Q, Bao X, Li W. Wavevector-dependent quantum-size effect in electron decay length at Pb thin film surfaces Applied Physics Letters. 93: 093105. DOI: 10.1063/1.2977529  0.178
2009 Zhang CG, Zhang R, Wang ZX, Zhou Z, Zhang SB, Chen Z. Ti-substituted boranes as hydrogen storage materials: a computational quest for the ideal combination of stable electronic structure and optimal hydrogen uptake. Chemistry (Weinheim An Der Bergstrasse, Germany). 15: 5910-9. PMID 19472230 DOI: 10.1002/chem.200900172  0.175
2000 Wei S, Zhang SB, Zunger A. First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys Journal of Applied Physics. 87: 1304-1311. DOI: 10.1063/1.372014  0.171
1999 Wei S, Zhang SB, Zunger A. Effects of Na on the electrical and structural properties of CuInSe2 Journal of Applied Physics. 85: 7214-7218. DOI: 10.1063/1.370534  0.171
2022 Feng Y, Wang C, Cui P, Li C, Zhang B, Gan L, Zhang S, Zhang X, Zhou X, Sun Z, Wang K, Duan Y, Li H, Zhou K, Huang H, et al. Ultrahigh Photocatalytic CO Reduction Efficiency and Selectivity Manipulation by Single-Tungsten-Atom Oxide at the Atomic Step of TiO. Advanced Materials (Deerfield Beach, Fla.). e2109074. PMID 35226767 DOI: 10.1002/adma.202109074  0.17
1994 Yeh C, Zhang SB, Zunger A. Pressure dependence of the band gaps in Si quantum wires Applied Physics Letters. 64: 3545-3547. DOI: 10.1063/1.111219  0.164
2009 Herrera M, Ramasse QM, Morgan DG, Gonzalez D, Pizarro J, Yáñez A, Galindo P, Garcia R, Du MH, Zhang SB, Hopkinson M, Browning ND. Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.125211  0.163
2010 Chan TL, Gaire C, Lu TM, Wang GC, Zhang SB. Type B epitaxy of Ge on CaF2(111) surface Surface Science. 604: 1645-1648. DOI: 10.1016/J.Susc.2010.06.008  0.161
2010 Chen W, Li Y, Yu G, Li CZ, Zhang SB, Zhou Z, Chen Z. Hydrogenation: a simple approach to realize semiconductor-half-metal-metal transition in boron nitride nanoribbons. Journal of the American Chemical Society. 132: 1699-705. PMID 20085366 DOI: 10.1021/Ja908475V  0.16
1993 Zhang SB, Zunger A. Prediction of unusual electronic properties of Si quantum films Applied Physics Letters. 63: 1399-1401. DOI: 10.1063/1.109689  0.16
2011 Gao X, Wang Y, Liu X, Chan TL, Irle S, Zhao Y, Zhang SB. Regioselectivity control of graphene functionalization by ripples. Physical Chemistry Chemical Physics : Pccp. 13: 19449-53. PMID 21971281 DOI: 10.1039/C1Cp22491C  0.157
2002 JIA J, LIU X, LI SC, WANG JZ, LI JL, LIU H, PAN MH, DOU RF, XUE Q, LI Z, ZHANG SB. ARTIFICIAL METAL NANOCLUSTER CRYSTALS Modern Physics Letters B. 16: 889-894. DOI: 10.1142/S0217984902004408  0.155
2012 Gao X, Zhao Y, Liu B, Xiang H, Zhang SB. Π-Bond maximization of graphene in hydrogen addition reactions. Nanoscale. 4: 1171-6. PMID 22159271 DOI: 10.1039/C1Nr11048A  0.153
2023 Chen B, Wang XP, Jiao F, Ning L, Huang J, Xie J, Zhang S, Li XB, Rao F. Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow-Drift Phase-Change Memory Applications. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2301043. PMID 37377084 DOI: 10.1002/advs.202301043  0.145
1995 Zhang S, Zunger A. Structure and formation energy of steps on the GaAs(001)-2 × 4 surface Materials Science and Engineering: B. 30: 127-136. DOI: 10.1016/0921-5107(94)09007-6  0.141
2009 Yang HX, Xu LF, Gu CZ, Fang Z, Zhang SB, Chshiev M. Stable hydroxyl network on diamond (0 0 1) via first-principles and MD investigation Surface Science. 603: 3035-3040. DOI: 10.1016/J.Susc.2009.08.014  0.135
2007 Zhao Y, Heben MJ, Dillon AC, Simpson LJ, Blackburn JL, Dorn HC, Zhang SB. Nontrivial tuning of the hydrogen-binding energy to fullerenes with endohedral metal dopants Journal of Physical Chemistry C. 111: 13275-13279. DOI: 10.1021/Jp073482A  0.134
1990 Zhang SB, Jackson WB. Theory of Hydrogen Complexes in Si Mrs Proceedings. 209. DOI: 10.1557/PROC-209-391  0.133
2022 Wu X, Yu F, Xie W, Liu Z, Wang Z, Zhang S. High-Stability Light-Element Magnetic Superatoms Determined by Hund's Rule. The Journal of Physical Chemistry Letters. 13: 2632-2637. PMID 35297251 DOI: 10.1021/acs.jpclett.2c00499  0.131
2002 Jia J, Wang J, Liu X, Wang XS, Xue Q, Li Z, Zhang SB. Spontaneous assembly of perfectly ordered identical-size nanocluster arrays Nanotechnology. 13: 736-740. DOI: 10.1088/0957-4484/13/6/308  0.131
2009 Jin P, Hao C, Gao Z, Zhang SB, Chen Z. Endohedral metalloborofullerenes La2@B80 and Sc3N@B80: a density functional theory prediction. The Journal of Physical Chemistry. A. 113: 11613-8. PMID 19606872 DOI: 10.1021/jp9019848  0.128
2021 Wang C, Wang K, Feng Y, Li C, Zhou X, Gan L, Feng Y, Zhou H, Zhang B, Qu X, Li H, Li J, Li A, Sun Y, Zhang S, et al. Co and Pt Dual-Single-Atoms with Oxygen-Coordinated Co-O-Pt Dimer Sites for Ultrahigh Photocatalytic Hydrogen Evolution Efficiency. Advanced Materials (Deerfield Beach, Fla.). e2003327. PMID 33615589 DOI: 10.1002/adma.202003327  0.128
1997 Zhang SB, Wei S, Zunger A. Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs Physical Review Letters. 78: 4059-4062. DOI: 10.1103/Physrevlett.78.4059  0.112
1997 Zhang SB, Zunger A. Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors Applied Physics Letters. 71: 677-679. DOI: 10.1063/1.119827  0.105
2012 Jin P, Chen Y, Zhang SB, Chen Z. Interactions between Al₁₂X (X = Al, C, N and P) nanoparticles and DNA nucleobases/base pairs: implications for nanotoxicity. Journal of Molecular Modeling. 18: 559-68. PMID 21547548 DOI: 10.1007/S00894-011-1085-5  0.099
1995 Zhang SB, Froyen S, Zunger A. Surface dimerization induced CuPtB versus CuPtA ordering of GaInP alloys Applied Physics Letters. 67: 3141-3143. DOI: 10.1063/1.114860  0.096
1984 Zhang S, Northrup JE, Cohen ML. Ge adsorption on the Si(111) surface Surface Science Letters. 145: L465-L470. DOI: 10.1016/0167-2584(84)90102-6  0.094
2007 Yang H, Xu L, Gu C, Zhang S. First-principles study of oxygenated diamond (001) surfaces with and without hydrogen Applied Surface Science. 253: 4260-4266. DOI: 10.1016/j.apsusc.2006.09.035  0.091
2012 Li F, Jin P, Jiang DE, Wang L, Zhang SB, Zhao J, Chen Z. B80 and B101-103 clusters: remarkable stability of the core-shell structures established by validated density functionals. The Journal of Chemical Physics. 136: 074302. PMID 22360238 DOI: 10.1063/1.3682776  0.091
1993 Yeh C, Zhang SB, Zunger A. Identity of the light‐emitting states in porous silicon wires Applied Physics Letters. 63: 3455-3457. DOI: 10.1063/1.110118  0.083
2019 Zhang X, Zhang J, Tse K, Zhang S, Zhu J. Long-range magnetic order stabilized by acceptors Physical Review B. 99. DOI: 10.1103/PhysRevB.99.134435  0.077
2015 Christenson SG, Xie W, Sun YY, Zhang SB. Carbon as a source for yellow luminescence in GaN: Isolated CN defect or its complexes Journal of Applied Physics. 118: 135708. DOI: 10.1063/1.4932206  0.066
2004 Luo X, Zhang SB, Wei S. Theory ofMnsupersaturation inSiandGe Physical Review B. 70. DOI: 10.1103/Physrevb.70.033308  0.056
1991 Jackson W, Zhang S. Hydrogen complexes in hydrogenated silicon Physica B: Condensed Matter. 170: 197-200. DOI: 10.1016/0921-4526(91)90123-V  0.038
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