Shengbai Zhang - Publications

Rensselaer Polytechnic Institute, Troy, NY, United States 
Condensed Matter Physics, Materials Science Engineering

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Year Citation  Score
2020 Wei X, Hui H, Perera S, Sheng A, Watson DF, Sun YY, Jia Q, Zhang S, Zeng H. Ti-Alloying of BaZrS Chalcogenide Perovskite for Photovoltaics. Acs Omega. 5: 18579-18583. PMID 32775859 DOI: 10.1021/acsomega.0c00740  0.96
2020 Cheng K, Wang H, Bang J, West D, Zhao J, Zhang S. Carrier Dynamics and Transfer Across the CdS/MoS Interface Upon Optical Excitation. The Journal of Physical Chemistry Letters. PMID 32693591 DOI: 10.1021/acs.jpclett.0c01188  1
2020 Jiang Z, Lou W, Liu Y, Li Y, Song H, Chang K, Duan W, Zhang S. Spin-Triplet Excitonic Insulator: The Case of Semihydrogenated Graphene. Physical Review Letters. 124: 166401. PMID 32383949 DOI: 10.1103/PhysRevLett.124.166401  0.92
2020 Zhou J, Xie Y, Zhang S, Chen Y. Critical topological nodal points and nodal lines/rings in Kagome graphene. Physical Chemistry Chemical Physics : Pccp. PMID 32270831 DOI: 10.1039/d0cp00190b  0.84
2020 Ma J, Wang H, Nie S, Yi C, Xu Y, Li H, Jandke J, Wulfhekel W, Huang Y, West D, Richard P, Chikina A, Strocov VN, Mesot J, Weng H, ... Zhang S, et al. Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic EuCd As. Advanced Materials (Deerfield Beach, Fla.). e1907565. PMID 32091144 DOI: 10.1002/adma.201907565  1
2019 Wang H, Qiu Z, Xia W, Ming C, Han Y, Cao L, Lu J, Zhang P, Zhang S, Xu H, Sun YY. Correction to "Semimetal or Semiconductor: The Nature of High Intrinsic Electrical Conductivity in TiS". The Journal of Physical Chemistry Letters. 160. PMID 31846334 DOI: 10.1021/acs.jpclett.9b03400  0.96
2019 Wang C, Li A, Li C, Zhang S, Li H, Zhou X, Hu L, Feng Y, Wang K, Zhu Z, Shao R, Chen Y, Gao P, Mao S, Huang J, et al. Ultrahigh Photocatalytic Rate at a Single-Metal-Atom-Oxide. Advanced Materials (Deerfield Beach, Fla.). e1903491. PMID 31725182 DOI: 10.1002/adma.201903491  0.84
2019 Wang H, Qiu Z, Xia W, Ming C, Han Y, Cao L, Lu J, Zhang P, Zhang S, Xu H, Sun YY. Semimetal or Semiconductor: the Nature of High Intrinsic Electrical Conductivity in TiS. The Journal of Physical Chemistry Letters. PMID 31652068 DOI: 10.1021/acs.jpclett.9b02710  0.96
2019 Tan H, Liu H, Li Y, Duan W, Zhang S. Understanding the origin of bandgap problem in transition and post-transition metal oxides. The Journal of Chemical Physics. 151: 124703. PMID 31575162 DOI: 10.1063/1.5111188  0.92
2019 Chai J, Zheng Z, Pan H, Zhang S, Lakshmi KV, Sun YY. Correction: Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective. Physical Chemistry Chemical Physics : Pccp. PMID 31552964 DOI: 10.1039/c9cp90238d  0.96
2019 Jiang Z, Li Y, Duan W, Zhang S. Half-Excitonic Insulator: A Single-Spin Bose-Einstein Condensate. Physical Review Letters. 122: 236402. PMID 31298916 DOI: 10.1103/PhysRevLett.122.236402  0.92
2019 Si C, Choe DH, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photo-Induced Vacancy Ordering and Phase Transition in MoTe2. Nano Letters. PMID 31096752 DOI: 10.1021/acs.nanolett.9b00613  1
2019 Chai J, Zheng Z, Pan H, Zhang S, Lakshmi KV, Sun YY. Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective. Physical Chemistry Chemical Physics : Pccp. PMID 30968099 DOI: 10.1039/c9cp00868c  0.96
2018 Choe DH, West D, Zhang S. Band Alignment and the Built-in Potential of Solids. Physical Review Letters. 121: 196802. PMID 30468617 DOI: 10.1103/PhysRevLett.121.196802  1
2018 Chen L, Liu J, Jiang C, Zhao K, Chen H, Shi X, Chen L, Sun C, Zhang S, Wang Y, Zhang Z. Nanoscale Behavior and Manipulation of the Phase Transition in Single-Crystal Cu Se. Advanced Materials (Deerfield Beach, Fla.). e1804919. PMID 30422346 DOI: 10.1002/adma.201804919  0.84
2018 Hull R, Keblinski P, Lewis D, Maniatty A, Meunier V, Oberai AA, Picu CR, Samuel J, Shephard MS, Tomozawa M, Vashishth D, Zhang S. Stochasticity in materials structure, properties, and processing-A review. Applied Physics Reviews. 5. PMID 30397419 DOI: 10.1063/1.4998144  0.68
2018 Lin Z, Choi JH, Zhang Q, Qin W, Yi S, Wang P, Li L, Wang Y, Zhang H, Sun Z, Wei L, Zhang S, Guo T, Lu Q, Cho JH, et al. Flatbands and Emergent Ferromagnetic Ordering in Fe_{3}Sn_{2} Kagome Lattices. Physical Review Letters. 121: 096401. PMID 30230862 DOI: 10.1103/PhysRevLett.121.096401  0.84
2018 Li Z, Wang T, Lu Z, Jin C, Chen Y, Meng Y, Lian Z, Taniguchi T, Watanabe K, Zhang S, Smirnov D, Shi SF. Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe. Nature Communications. 9: 3719. PMID 30213927 DOI: 10.1038/s41467-018-05863-5  0.84
2018 Ren XY, Xia S, Li XB, Chen NK, Wang XP, Wang D, Chen ZG, Zhang S, Sun HB. Non-phase-separated 2D B-C-N alloys via molecule-like carbon doping in 2D BN: atomic structures and optoelectronic properties. Physical Chemistry Chemical Physics : Pccp. PMID 30168546 DOI: 10.1039/c8cp03028f  0.88
2018 Lu Z, Sun X, Xue W, Littlejohn A, Wang GC, Zhang S, Washington MA, Lu TM. Remote epitaxy of copper on sapphire through monolayer graphene buffer. Nanotechnology. PMID 30124437 DOI: 10.1088/1361-6528/aadb78  0.76
2018 Li Y, Wang T, Wang H, Li Z, Chen Y, West D, Sankar R, Ulaganathan RK, Chou FC, Wetzel C, Xu CY, Zhang S, Shi S. Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes. Nano Letters. PMID 30021441 DOI: 10.1021/acs.nanolett.8b01940  1
2018 Zheng F, Zhao J, Liu Z, Li M, Zhou M, Zhang S, Zhang P. Tunable spin states in the two-dimensional magnet CrI. Nanoscale. PMID 30015343 DOI: 10.1039/c8nr03230k  0.88
2018 Zhu Z, Cui P, Cai X, Xia M, Jia Y, Zhang S, Zhang Z. Red phosphorus in its two-dimensional limit: novel clathrates with varying band gaps and superior chemical stabilities. Nanoscale. PMID 30009303 DOI: 10.1039/c8nr02877j  0.84
2018 Chen NK, Li XB, Bang J, Wang XP, Han D, West D, Zhang S, Sun HB. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701. PMID 29775378 DOI: 10.1103/PhysRevLett.120.185701  1
2018 Li X, Li B, Fan X, Wei L, Li L, Tao R, Zhang X, Zhang H, Zhang Q, Zhu H, Zhang S, Zhang Z, Zeng C. Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties. Nanoscale. PMID 29701214 DOI: 10.1039/c8nr02005a  0.84
2018 Xie SY, Wang L, Liu F, Li XB, Bai L, Prakapenka VB, Cai Z, Mao HK, Zhang S, Liu H. Correlated High-Pressure Phase Sequence of VO under Strong Compression. The Journal of Physical Chemistry Letters. PMID 29669204 DOI: 10.1021/acs.jpclett.8b00771  0.88
2018 Zhang J, Xie W, Agiorgousis ML, Choe DH, Meunier V, Xu X, Zhao J, Zhang S. Quantum oscillation in carrier transport in two-dimensional junctions. Nanoscale. PMID 29666851 DOI: 10.1039/c8nr01359d  1
2017 Wang J, Sui X, Shi W, Pan J, Zhang S, Liu F, Wei SH, Yan Q, Huang B. Prediction of Ideal Topological Semimetals with Triply Degenerate Points in the NaCu_{3}Te_{2} Family. Physical Review Letters. 119: 256402. PMID 29303319 DOI: 10.1103/PhysRevLett.119.256402  0.88
2017 Wang L, Guan P, Teng J, Liu P, Chen D, Xie W, Kong D, Zhang S, Zhu T, Zhang Z, Ma E, Chen M, Han X. New twinning route in face-centered cubic nanocrystalline metals. Nature Communications. 8: 2142. PMID 29247224 DOI: 10.1038/s41467-017-02393-4  0.88
2017 Chen NK, Han D, Li XB, Liu F, Bang J, Wang XP, Chen QD, Wang HY, Zhang S, Sun HB. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Physical Chemistry Chemical Physics : Pccp. PMID 28861554 DOI: 10.1039/c7cp03103c  0.88
2017 Wang Y, Sun X, Chen Z, Sun YY, Zhang S, Lu TM, Wertz E, Shi J. High-Temperature Ionic Epitaxy of Halide Perovskite Thin Film and the Hidden Carrier Dynamics. Advanced Materials (Deerfield Beach, Fla.). PMID 28719021 DOI: 10.1002/adma.201702643  0.96
2017 Zhong C, Chen Y, Yu ZM, Xie Y, Wang H, Yang SA, Zhang S. Three-dimensional Pentagon Carbon with a genesis of emergent fermions. Nature Communications. 8: 15641. PMID 28580929 DOI: 10.1038/ncomms15641  0.96
2017 Zhong C, Chen Y, Xie Y, Sun YY, Zhang S. Semi-Dirac semimetal in silicene oxide. Physical Chemistry Chemical Physics : Pccp. PMID 28102377 DOI: 10.1039/c6cp08439g  0.96
2016 Cheng S, Lu J, Han D, Liu M, Lu X, Ma C, Zhang S, Chen C. Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films. Scientific Reports. 6: 37496. PMID 27876830 DOI: 10.1038/srep37496  0.88
2016 Ma C, Han D, Liu M, Collins G, Wang H, Xu X, Lin Y, Jiang J, Zhang S, Chen C. Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3. Scientific Reports. 6: 37337. PMID 27869137 DOI: 10.1038/srep37337  0.96
2016 Wang Y, Seewald L, Sun YY, Keblinski P, Sun X, Zhang S, Lu TM, Johnson JM, Hwang J, Shi J. Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide. Advanced Materials (Deerfield Beach, Fla.). PMID 27572096 DOI: 10.1002/adma.201602178  0.96
2016 Han D, Bang J, Xie W, Meunier V, Zhang S. Phonon-enabled Carrier Transport of Localized States at Non-polar Semiconductor Surfaces: A First-principles Based Prediction. The Journal of Physical Chemistry Letters. PMID 27552528 DOI: 10.1021/acs.jpclett.6b01608  0.96
2016 Sun YY, Zhang S. Communication: Effect of accidental mode degeneracy on Raman intensity in 2D materials: Hybrid functional study of bilayer phosphorene. The Journal of Chemical Physics. 145: 021102. PMID 27421389 DOI: 10.1063/1.4958460  0.96
2016 Gao Y, Chen Y, Zhong C, Zhang Z, Xie Y, Zhang S. Electron and phonon properties and gas storage in carbon honeycombs. Nanoscale. PMID 27315245 DOI: 10.1039/c6nr03655d  0.84
2016 Wang H, Bang J, Sun Y, Liang L, West D, Meunier V, Zhang S. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures. Nature Communications. 7: 11504. PMID 27160484 DOI: 10.1038/ncomms11504  0.96
2016 Lei SY, Wang H, Huang L, Sun YY, Zhang S. Stacking fault enriching the electronic and transport properties of few-layer phosphorenes and black phosphorus. Nano Letters. PMID 26799596 DOI: 10.1021/acs.nanolett.5b04719  0.96
2016 Sun YY, Zhang S. Kinetics stabilized doping: computational optimization of carbon-doped anatase TiO2 for visible-light driven water splitting. Physical Chemistry Chemical Physics : Pccp. PMID 26725589 DOI: 10.1039/c5cp07109g  0.96
2016 Li F, Zhang Q, Tang C, Liu C, Shi J, Nie CN, Zhou G, Li Z, Zhang W, Song CL, He K, Ji S, Zhang S, Gu L, Wang L, et al. Atomically resolved FeSe/SrTiO3(001) interface structure by scanning transmission electron microscopy 2d Materials. 3. DOI: 10.1088/2053-1583/3/2/024002  0.96
2016 Zhang B, Zhang W, Shen Z, Chen Y, Li J, Zhang S, Zhang Z, Wuttig M, Mazzarello R, Ma E, Han X. Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material Applied Physics Letters. 108. DOI: 10.1063/1.4949011  0.96
2016 Wang Y, Sun YY, Zhang S, Lu TM, Shi J. Band gap engineering of a soft inorganic compound PbI2 by incommensurate van der Waals epitaxy Applied Physics Letters. 108. DOI: 10.1063/1.4939269  0.76
2016 Xie W, Lucking M, Chen L, Bhat I, Wang GC, Lu TM, Zhang S. Modular Approach for Metal-Semiconductor Heterostructures with Very Large Interface Lattice Misfit: A First-Principles Perspective Crystal Growth and Design. 16: 2328-2334. DOI: 10.1021/acs.cgd.6b00118  0.96
2016 Chen L, Xie W, Wang GC, Bhat I, Zhang S, Goyal A, Lu TM. Heteroepitaxy of large grain Ge film on cube-textured Ni(001) foils through CaF2 buffer layer Thin Solid Films. 603: 428-434. DOI: 10.1016/j.tsf.2016.03.007  0.76
2016 Gao W, Abtew TA, Cai T, Sun YY, Zhang S, Zhang P. On the applicability of hybrid functionals for predicting fundamental properties of metals Solid State Communications. 234: 10-13. DOI: 10.1016/j.ssc.2016.02.014  0.96
2016 Perera S, Hui H, Zhao C, Xue H, Sun F, Deng C, Gross N, Milleville C, Xu X, Watson DF, Weinstein B, Sun YY, Zhang S, Zeng H. Chalcogenide perovskites - an emerging class of ionic semiconductors Nano Energy. 22: 129-135. DOI: 10.1016/j.nanoen.2016.02.020  0.68
2016 Zhang Z, Chen Y, Xie Y, Zhang S. Transition of thermal rectification in silicon nanocones Applied Thermal Engineering. 102: 1075-1080. DOI: 10.1016/j.applthermaleng.2016.03.083  0.96
2015 Chen YP, Xie Y, Yang SA, Pan H, Zhang F, Cohen ML, Zhang S. Nanostructured carbon allotropes with Weyl-like loops and points. Nano Letters. PMID 26426355 DOI: 10.1021/acs.nanolett.5b02978  0.96
2015 Sun YY, Shi J, Lian J, Gao W, Agiorgousis ML, Zhang P, Zhang S. Discovering lead-free perovskite solar materials with a split-anion approach. Nanoscale. PMID 26349623 DOI: 10.1039/c5nr04310g  0.96
2015 Liu W, West D, He L, Xu Y, Liu J, Wang K, Wang Y, van der Laan G, Zhang R, Zhang S, Wang KL. Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators. Acs Nano. PMID 26348798 DOI: 10.1021/acsnano.5b03980  0.96
2015 Wang F, Sun YY, Hatch JB, Xing H, Zhu X, Zhang H, Xu X, Luo H, Perera S, Zhang S, Zeng H. Realizing chemical codoping in TiO2. Physical Chemistry Chemical Physics : Pccp. 17: 17989-94. PMID 26096158 DOI: 10.1039/c5cp02020d  0.96
2015 Lucking M, Sun YY, West D, Zhang S. A nucleus-coupled electron transfer mechanism for TiO2-catalyzed water splitting. Physical Chemistry Chemical Physics : Pccp. 17: 16779-83. PMID 26050615 DOI: 10.1039/c5cp01202c  0.96
2015 Jiang Y, Zhang X, Wang Y, Wang N, West D, Zhang S, Zhang Z. Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates. Nano Letters. 15: 3147-52. PMID 25919088 DOI: 10.1021/acs.nanolett.5b00240  0.96
2015 Sun YY, Agiorgousis ML, Zhang P, Zhang S. Chalcogenide perovskites for photovoltaics. Nano Letters. 15: 581-5. PMID 25548882 DOI: 10.1021/nl504046x  0.96
2015 Xie SY, Li XB, Tian WQ, Chen NK, Wang Y, Zhang S, Sun HB. A novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice. Physical Chemistry Chemical Physics : Pccp. 17: 1093-8. PMID 25414074 DOI: 10.1039/c4cp03728f  0.96
2015 Lucking MC, Bang J, Terrones H, Sun YY, Zhang S. Multivalency-induced band gap opening at MoS2 edges Chemistry of Materials. 27: 3326-3331. DOI: 10.1021/acs.chemmater.5b00398  0.96
2015 Chen NK, Li XB, Wang XP, Xia MJ, Xie SY, Wang HY, Song Z, Zhang S, Sun HB. Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization Acta Materialia. 90: 88-93. DOI: 10.1016/j.actamat.2015.02.015  0.96
2015 Su PY, Dahal R, Wang GC, Zhang S, Lu TM, Bhat IB. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications Journal of Electronic Materials. DOI: 10.1007/s11664-015-3829-y  0.96
2014 Agiorgousis ML, Sun YY, Zeng H, Zhang S. Strong covalency-induced recombination centers in perovskite solar cell material CH3NH3PbI3. Journal of the American Chemical Society. 136: 14570-5. PMID 25243595 DOI: 10.1021/ja5079305  0.96
2014 Fang L, Iyer RG, Tan G, West DJ, Zhang S, Kanatzidis MG. The new phase [Tl₄Sb₆Se₁₀][Sn₅Sb₂Se₁₄]: a naturally formed semiconducting heterostructure with two-dimensional conductance. Journal of the American Chemical Society. 136: 11079-84. PMID 25058471 DOI: 10.1021/ja505301y  0.96
2014 Zhu M, Xia M, Rao F, Li X, Wu L, Ji X, Lv S, Song Z, Feng S, Sun H, Zhang S. One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Nature Communications. 5: 4086. PMID 25001009 DOI: 10.1038/ncomms5086  0.84
2014 Xie SY, Li XB, Tian WQ, Chen NK, Zhang XL, Wang Y, Zhang S, Sun HB. First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.035447  0.96
2013 Li L, Wang Y, Xie S, Li XB, Wang YQ, Wu R, Sun H, Zhang S, Gao HJ. Two-dimensional transition metal honeycomb realized: Hf on Ir(111). Nano Letters. 13: 4671-4. PMID 24016148 DOI: 10.1021/nl4019287  0.88
2013 Wang Z, Gu M, Zhou Y, Zu X, Connell JG, Xiao J, Perea D, Lauhon LJ, Bang J, Zhang S, Wang C, Gao F. Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys. Nano Letters. 13: 4511-6. PMID 23944904 DOI: 10.1021/nl402429a  0.96
2013 Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih CK. Mapping the 3D surface potential in Bi₂Se₃. Nature Communications. 4: 2277. PMID 23912773 DOI: 10.1038/ncomms3277  1
2013 Yue Y, Chen N, Li X, Zhang S, Zhang Z, Chen M, Han X. Crystalline liquid and rubber-like behavior in Cu nanowires. Nano Letters. 13: 3812-6. PMID 23898785 DOI: 10.1021/nl401829e  0.84
2013 Zheng JJ, Zhao X, Zhang SB, Gao X. Tight-binding description of graphyne and its two-dimensional derivatives. The Journal of Chemical Physics. 138: 244708. PMID 23822265 DOI: 10.1063/1.4811841  0.76
2013 Jiang Y, Wang Y, Sagendorf J, West D, Kou X, Wei X, He L, Wang KL, Zhang S, Zhang Z. Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators. Nano Letters. 13: 2851-6. PMID 23713705 DOI: 10.1021/nl401186d  0.96
2013 Gao X, Wei Z, Meunier V, Sun Y, Zhang SB. Opening a large band gap for graphene by covalent addition Chemical Physics Letters. 555: 1-6. DOI: 10.1016/j.cplett.2012.10.069  0.96
2012 Li F, Jin P, Jiang DE, Wang L, Zhang SB, Zhao J, Chen Z. B80 and B101-103 clusters: remarkable stability of the core-shell structures established by validated density functionals. The Journal of Chemical Physics. 136: 074302. PMID 22360238 DOI: 10.1063/1.3682776  0.92
2012 Gao X, Zhao Y, Liu B, Xiang H, Zhang SB. Π-Bond maximization of graphene in hydrogen addition reactions. Nanoscale. 4: 1171-6. PMID 22159271 DOI: 10.1039/c1nr11048a  0.76
2012 Jin P, Chen Y, Zhang SB, Chen Z. Interactions between Al₁₂X (X = Al, C, N and P) nanoparticles and DNA nucleobases/base pairs: implications for nanotoxicity. Journal of Molecular Modeling. 18: 559-68. PMID 21547548 DOI: 10.1007/s00894-011-1085-5  0.92
2011 Wang L, Zhao J, Sun YY, Zhang SB. Characteristics of Raman spectra for graphene oxide from ab initio simulations. The Journal of Chemical Physics. 135: 184503. PMID 22088071 DOI: 10.1063/1.3658859  0.96
2011 Wang L, Zhao J, Wang L, Yan T, Sun YY, Zhang SB. Titanium-decorated graphene oxide for carbon monoxide capture and separation. Physical Chemistry Chemical Physics : Pccp. 13: 21126-31. PMID 22025026 DOI: 10.1039/c1cp21778j  0.96
2011 Gao X, Wang Y, Liu X, Chan TL, Irle S, Zhao Y, Zhang SB. Regioselectivity control of graphene functionalization by ripples. Physical Chemistry Chemical Physics : Pccp. 13: 19449-53. PMID 21971281 DOI: 10.1039/c1cp22491c  0.8
2011 Gao X, Hodgson JL, Jiang DE, Zhang SB, Nagase S, Miller GP, Chen Z. Open-shell singlet character of stable derivatives of nonacene, hexacene and teranthene. Organic Letters. 13: 3316-9. PMID 21648416 DOI: 10.1021/ol201004u  0.96
2011 Wang G, Zhu XG, Sun YY, Li YY, Zhang T, Wen J, Chen X, He K, Wang LL, Ma XC, Jia JF, Zhang SB, Xue QK. Topological insulator thin films of Bi2Te3 with controlled electronic structure. Advanced Materials (Deerfield Beach, Fla.). 23: 2929-32. PMID 21544877 DOI: 10.1002/adma.201100678  0.96
2010 Gao X, Zhang SB, Zhao Y, Nagase S. A nanoscale jigsaw-puzzle approach to large π-conjugated systems. Angewandte Chemie (International Ed. in English). 49: 6764-7. PMID 20715034 DOI: 10.1002/anie.201002617  0.76
2010 Chen W, Li Y, Yu G, Li CZ, Zhang SB, Zhou Z, Chen Z. Hydrogenation: a simple approach to realize semiconductor-half-metal-metal transition in boron nitride nanoribbons. Journal of the American Chemical Society. 132: 1699-705. PMID 20085366 DOI: 10.1021/ja908475v  0.92
2010 Chan TL, Gaire C, Lu TM, Wang GC, Zhang SB. Type B epitaxy of Ge on CaF2(111) surface Surface Science. 604: 1645-1648. DOI: 10.1016/j.susc.2010.06.008  0.96
2009 Wang L, Lee K, Sun YY, Lucking M, Chen Z, Zhao JJ, Zhang SB. Graphene oxide as an ideal substrate for hydrogen storage. Acs Nano. 3: 2995-3000. PMID 19856979 DOI: 10.1021/nn900667s  0.96
2009 Jin P, Hao C, Gao Z, Zhang SB, Chen Z. Endohedral metalloborofullerenes La2@B80 and Sc3N@B80: a density functional theory prediction. The Journal of Physical Chemistry. A. 113: 11613-8. PMID 19606872 DOI: 10.1021/jp9019848  0.92
2009 Zhang CG, Zhang R, Wang ZX, Zhou Z, Zhang SB, Chen Z. Ti-substituted boranes as hydrogen storage materials: a computational quest for the ideal combination of stable electronic structure and optimal hydrogen uptake. Chemistry (Weinheim An Der Bergstrasse, Germany). 15: 5910-9. PMID 19472230 DOI: 10.1002/chem.200900172  0.92
2009 Herrera M, Ramasse QM, Morgan DG, Gonzalez D, Pizarro J, Yáñez A, Galindo P, Garcia R, Du MH, Zhang SB, Hopkinson M, Browning ND. Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.125211  0.96
2009 Yang HX, Xu LF, Gu CZ, Fang Z, Zhang SB, Chshiev M. Stable hydroxyl network on diamond (0 0 1) via first-principles and MD investigation Surface Science. 603: 3035-3040. DOI: 10.1016/j.susc.2009.08.014  0.96
2008 Li Y, Zhou Z, Zhang S, Chen Z. MoS2 nanoribbons: high stability and unusual electronic and magnetic properties. Journal of the American Chemical Society. 130: 16739-44. PMID 19554733 DOI: 10.1021/ja805545x  0.92
2008 Han X, Zheng S, Zhang Y, Zheng K, Zhang S, Zhang Z, Zhang X, Liu X, Chen G, Hao Y, Guo X. Polarization driven covalently-bonded octahedral-twinning and backbone-peripheral-helical nanoarchitectures. Nano Letters. 8: 2258-64. PMID 18616328 DOI: 10.1021/nl080880w  0.84
2008 Zhao Y, Lusk MT, Dillon AC, Heben MJ, Zhang SB. Boron-based organometallic nanostructures: hydrogen storage properties and structure stability. Nano Letters. 8: 157-61. PMID 18069871 DOI: 10.1021/nl072321f  0.96
2008 Du MH, Zhang SB, Northrup JE, Erwin SC. Stabilization mechanisms of polar surfaces: ZnO surfaces Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/PhysRevB.78.155424  0.96
2007 Zhao Y, Heben MJ, Dillon AC, Simpson LJ, Blackburn JL, Dorn HC, Zhang SB. Nontrivial tuning of the hydrogen-binding energy to fullerenes with endohedral metal dopants Journal of Physical Chemistry C. 111: 13275-13279. DOI: 10.1021/jp073482a  0.96
2007 Allenci A, Guo W, Chen Y, Katz MB, Zhao G, Che Y, Hu Z, Liu B, Zhang SB, Pan X. Amphoteric phosphorus doping for stable p-type ZnO Advanced Materials. 19: 3333-3337. DOI: 10.1002/adma.200700083  0.96
1991 Tarnow E, Zhang SB. Heteroepitaxy of I-VII materials on III-V substrates Applied Physics Letters. 58: 2120-2122. DOI: 10.1063/1.104979  0.96
Low-probability matches
2014 Liu X, Sun YY, West D, Gao X, Zhang SB. Modulation of the Band Gap Increase in Nanocrystals by Surface Passivation The Journal of Physical Chemistry C. 118: 14026-14030. DOI: 10.1021/JP503701K  0.2
2002 JIA J, LIU X, LI SC, WANG JZ, LI JL, LIU H, PAN MH, DOU RF, XUE Q, LI Z, ZHANG SB. ARTIFICIAL METAL NANOCLUSTER CRYSTALS Modern Physics Letters B. 16: 889-894. DOI: 10.1142/S0217984902004408  0.16
2018 Liu Q, Han N, Zhang S, Zhao J, Yang F, Bao X. Tuning the structures of two-dimensional cuprous oxide confined on Au(111) Nano Research. 11: 5957-5967. DOI: 10.1007/s12274-018-2109-6  0.08
2017 Wang D, Han D, Li X, Chen N, West D, Meunier V, Zhang S, Sun H. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus Physical Review B. 96. DOI: 10.1103/PHYSREVB.96.155424  0.08
2015 Christenson SG, Xie W, Sun YY, Zhang SB. Carbon as a source for yellow luminescence in GaN: Isolated CN defect or its complexes Journal of Applied Physics. 118: 135708. DOI: 10.1063/1.4932206  0.08
1993 Yeh C, Zhang SB, Zunger A. Identity of the light‐emitting states in porous silicon wires Applied Physics Letters. 63: 3455-3457. DOI: 10.1063/1.110118  0.08
2019 Xiao C, Wang X, Pi X, Yang SA, Feng Y, Lu Y, Zhang S. Spontaneous symmetry lowering of Si (001) towards two-dimensional ferro/antiferroelectric behavior Physical Review Materials. 3. DOI: 10.1103/PHYSREVMATERIALS.3.044410  0.04
2019 Zhang X, Zhang J, Tse K, Zhang S, Zhu J. Long-range magnetic order stabilized by acceptors Physical Review B. 99. DOI: 10.1103/PhysRevB.99.134435  0.04
2018 Chen N, Li X, Wang X, Xie S, Tian WQ, Zhang S, Sun H. Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study Ieee Transactions On Nanotechnology. 17: 140-146. DOI: 10.1109/TNANO.2017.2779579  0.04
2018 Chen Y, Xie Y, Gao Y, Chang P, Zhang S, Vanderbilt D. Nexus networks in carbon honeycombs Physical Review Materials. 2. DOI: 10.1103/PhysRevMaterials.2.044205  0.04
2018 Agiorgousis ML, Sun Y, West D, Zhang S. Intercalated Chevrel Phase Mo6S8 as a Janus Material for Energy Generation and Storage Acs Applied Energy Materials. 1: 440-446. DOI: 10.1021/ACSAEM.7B00092  0.04
2018 Chen N, Li X, Wang X, Tian WQ, Zhang S, Sun H. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy Acta Materialia. 143: 102-106. DOI: 10.1016/J.ACTAMAT.2017.10.013  0.04
2018 Xiao C, Wang F, Yang SA, Lu Y, Feng Y, Zhang S. Elemental Ferroelectricity and Antiferroelectricity in Group-V Monolayer Advanced Functional Materials. 28: 1707383. DOI: 10.1002/ADFM.201707383  0.04
2016 Zheng Z, Sun Y, Xie W, Zhao J, Zhang S. Solvent-Based Atomistic Theory for Doping Colloidal-Synthesized Quantum Dots via Cation Exchange The Journal of Physical Chemistry C. 120: 27085-27090. DOI: 10.1021/ACS.JPCC.6B11150  0.04
2011 Gao X, Jiang D, Zhao Y, Nagase S, Zhang S, Chen Z. Theoretical Insights into the Structures of Graphene Oxide and Its Chemical Conversions Between Graphene Journal of Computational and Theoretical Nanoscience. 8: 2406-2422. DOI: 10.1166/JCTN.2011.1972  0.04
2010 Lu T, Li H, Gaire C, LiCausi N, Chan TL, Bhat I, Zhang S, Wang GC. Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers Mrs Proceedings. 1268. DOI: 10.1557/PROC-1268-EE03-06  0.04
2008 Zhou Z, Li Y, Liu L, Chen Y, Zhang SB, Chen Z. Size- and Surface-dependent Stability, Electronic Properties, and Potential as Chemical Sensors: Computational Studies on One-dimensional ZnO Nanostructures The Journal of Physical Chemistry C. 112: 13926-13931. DOI: 10.1021/JP803273R  0.04
2002 Jia J, Wang J, Liu X, Wang XS, Xue Q, Li Z, Zhang SB. Spontaneous assembly of perfectly ordered identical-size nanocluster arrays Nanotechnology. 13: 736-740. DOI: 10.1088/0957-4484/13/6/308  0.04
1995 Zhang S, Zunger A. Structure and formation energy of steps on the GaAs(001)-2 × 4 surface Materials Science and Engineering: B. 30: 127-136. DOI: 10.1016/0921-5107(94)09007-6  0.04
1990 García A, Cohen ML, Zhang SB. Theoretical Study of a new Transition Sequence in III-V Compounds: High-Pressure Phases of InSb Mrs Proceedings. 193. DOI: 10.1557/PROC-193-89  0.04
1984 Zhang S, Northrup JE, Cohen ML. Ge adsorption on the Si(111) surface Surface Science Letters. 145: L465-L470. DOI: 10.1016/0167-2584(84)90102-6  0.04
2018 Gao Y, Chen Y, Xie Y, Chang P, Cohen ML, Zhang S. A class of topological nodal rings and its realization in carbon networks Physical Review B. 97. DOI: 10.1103/PhysRevB.97.121108  0.01
2018 Lei S, Shen H, Sun Y, Wan N, Yu H, Zhang S. Enhancing the ambient stability of few-layer black phosphorus by surface modification Rsc Advances. 8: 14676-14683. DOI: 10.1039/C8RA00560E  0.01
2018 Wang G, Xie W, Xu D, Ma H, Yang H, Lu H, Sun H, Li Y, Jia S, Fu L, Zhang S, Jia J. Formation mechanism of twin domain boundary in 2D materials: The case for WTe2 Nano Research. 12: 569-573. DOI: 10.1007/s12274-018-2255-x  0.01
2017 Guo F, Lu Z, Mohanty D, Wang T, Bhat IB, Zhang S, Shi S, Washington MA, Wang G, Lu T. A two-step dry process for Cs2SnI6 perovskite thin film Materials Research Letters. 5: 540-546. DOI: 10.1080/21663831.2017.1346525  0.01
2017 Li W, Ma Y, Yang S, Gong J, Zhang S, Xiao X. Nanoscopic study of the compositions, structures, and electronic properties of grain boundaries in Cu(InGa)Se2 photovoltaic thin films Nano Energy. 33: 157-167. DOI: 10.1016/J.NANOEN.2017.01.041  0.01
2017 Wang X, Li X, Chen N, Chen Q, Han X, Zhang S, Sun H. Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory Acta Materialia. 136: 242-248. DOI: 10.1016/J.ACTAMAT.2017.07.006  0.01
2016 Zhang J, Xie W, Zhao J, Zhang S. Band alignment of two-dimensional lateral heterostructures 2d Materials. 4: 015038. DOI: 10.1088/2053-1583/aa50cc  0.01
2016 Zhang J, Xie W, Xu X, Zhang S, Zhao J. Structural and Electronic Properties of Interfaces in Graphene and Hexagonal Boron Nitride Lateral Heterostructures Chemistry of Materials. 28: 5022-5028. DOI: 10.1021/ACS.CHEMMATER.6B01764  0.01
2013 Bang J, Li Z, Sun YY, Samanta A, Zhang YY, Zhang W, Wang L, Chen X, Ma X, Xue Q, Zhang SB. Atomic and electronic structures of single-layer FeSe on SrTiO3(001): The role of oxygen deficiency Physical Review B. 87. DOI: 10.1103/PHYSREVB.87.220503  0.01
2013 Xie W, Bang J, Zhang S. Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors Materials Research Letters. 2: 51-56. DOI: 10.1080/21663831.2013.859639  0.01
2013 Xie W, West DJ, Sun Y, Zhang S. Role of nano in catalysis: Palladium catalyzed hydrogen desorption from nanosized magnesium hydride Nano Energy. 2: 742-748. DOI: 10.1016/J.NANOEN.2012.12.010  0.01
2008 Liu X, Zhang SB, Ma XC, Jia J, Xue Q, Bao X, Li W. Wavevector-dependent quantum-size effect in electron decay length at Pb thin film surfaces Applied Physics Letters. 93: 093105. DOI: 10.1063/1.2977529  0.01
2008 Gao X, Zhou Z, Zhao Y, Nagase S, Zhang SB, Chen Z. Comparative Study of Carbon and BN Nanographenes: Ground Electronic States and Energy Gap Engineering The Journal of Physical Chemistry C. 112: 12677-12682. DOI: 10.1021/JP801679J  0.01
2007 Yang H, Xu L, Gu C, Zhang S. First-principles study of oxygenated diamond (001) surfaces with and without hydrogen Applied Surface Science. 253: 4260-4266. DOI: 10.1016/j.apsusc.2006.09.035  0.01
2004 Kim Y, Zhao Y, Heben MJ, Zhang SB. Generalized Kubas Complexes as a Novel Means for Room Temperature Molecular Hydrogen Storage Mrs Proceedings. 837. DOI: 10.1557/PROC-837-N3.21  0.01
2004 Luo X, Zhang SB, Wei S. Theory ofMnsupersaturation inSiandGe Physical Review B. 70. DOI: 10.1103/PHYSREVB.70.033308  0.01
2003 Batyrev IG, Norman AG, Zhang S, Wei S. Quadruple-period ordering in MBE GaAsSb alloys Mrs Proceedings. 794. DOI: 10.1557/PROC-794-T10.5  0.01
2002 Wei S, Zhang SB. Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe Physical Review B. 66. DOI: 10.1103/PHYSREVB.66.155211  0.01
2000 Wei S, Zhang S, Zunger A. Band Structure and Stability of Ternary Semiconductor Polytypes Japanese Journal of Applied Physics. 39: 237. DOI: 10.7567/JJAPS.39S1.237  0.01
2000 Wei S, Zhang SB, Zunger A. First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys Journal of Applied Physics. 87: 1304-1311. DOI: 10.1063/1.372014  0.01
1999 Wei S, Zhang SB, Zunger A. Effects of Na on the electrical and structural properties of CuInSe2 Journal of Applied Physics. 85: 7214-7218. DOI: 10.1063/1.370534  0.01
1998 Zhang SB, Wei S, Zunger A. A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds Journal of Applied Physics. 83: 3192-3196. DOI: 10.1063/1.367120  0.01
1998 Wei S, Zhang SB, Zunger A. Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties Applied Physics Letters. 72: 3199-3201. DOI: 10.1063/1.121548  0.01
1997 Zhang SB, Wei S, Zunger A. Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs Physical Review Letters. 78: 4059-4062. DOI: 10.1103/PhysRevLett.78.4059  0.01
1997 Zhang SB, Zunger A. Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors Applied Physics Letters. 71: 677-679. DOI: 10.1063/1.119827  0.01
1995 Zhang SB, Froyen S, Zunger A. Surface dimerization induced CuPtB versus CuPtA ordering of GaInP alloys Applied Physics Letters. 67: 3141-3143. DOI: 10.1063/1.114860  0.01
1994 Wei S, Zhang SB, Zunger A. Structural instability in zinc-blende semiconductors Ferroelectrics. 155: 127-132. DOI: 10.1080/00150199408007495  0.01
1994 Yeh C, Zhang SB, Zunger A. Pressure dependence of the band gaps in Si quantum wires Applied Physics Letters. 64: 3545-3547. DOI: 10.1063/1.111219  0.01
1993 Zhang SB, Zunger A. Prediction of unusual electronic properties of Si quantum films Applied Physics Letters. 63: 1399-1401. DOI: 10.1063/1.109689  0.01
1991 Tarnow E, Zhang S. An Insulating Overlayer for GaAs Mrs Proceedings. 221. DOI: 10.1557/PROC-221-301  0.01
1991 Jackson W, Zhang S. Hydrogen complexes in hydrogenated silicon Physica B: Condensed Matter. 170: 197-200. DOI: 10.1016/0921-4526(91)90123-V  0.01
1990 Zhang SB, Jackson WB. Theory of Hydrogen Complexes in Si Mrs Proceedings. 209. DOI: 10.1557/PROC-209-391  0.01
1990 ZHANG S. CATION ANTISITE DEFECTS AND ANTISITE-BASED-DEFECT COMPLEXES IN GaAs Modern Physics Letters B. 4: 1133-1136. DOI: 10.1142/S0217984990001422  0.01
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