| Year |
Citation |
Score |
| 2018 |
Bhuiyan MA, Zhou H, Chang S, Lou X, Gong X, Jiang R, Gong H, Zhang EX, Won C, Lim J, Lee J, Gordon RG, Reed RA, Fleetwood DM, Ye P, ... Ma T, et al. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52. DOI: 10.1109/Tns.2017.2774928 |
0.414 |
|
| 2018 |
Bhuiyan MA, Zhou H, Jiang R, Zhang EX, Fleetwood DM, Ye PD, Ma T. Charge Trapping in Al2O3/$\beta$ -Ga2O3-Based MOS Capacitors Ieee Electron Device Letters. 39: 1022-1025. DOI: 10.1109/Led.2018.2841899 |
0.398 |
|
| 2018 |
Gong N, Ma T. A Study of Endurance Issues in HfO 2 -Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation Ieee Electron Device Letters. 39: 15-18. DOI: 10.1109/Led.2017.2776263 |
0.353 |
|
| 2017 |
Ren S, Bhuiyan MA, Zhang J, Lou X, Si M, Gong X, Jiang R, Ni K, Wan X, Zhang EX, Gordon RG, Reed RA, Fleetwood DM, Ye P, Ma TP. Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics Ieee Transactions On Nuclear Science. 64: 164-169. DOI: 10.1109/Tns.2016.2620993 |
0.454 |
|
| 2016 |
Chang SJ, Kang HS, Lee JH, Yang J, Bhuiyan M, Jo YW, Cui S, Ma TP. Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.044104 |
0.359 |
|
| 2016 |
Gong N, Ma T. Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective Ieee Electron Device Letters. 37: 1123-1126. DOI: 10.1109/Led.2016.2593627 |
0.319 |
|
| 2015 |
Ren S, Si M, Ni K, Wan X, Chen J, Chang S, Sun X, Zhang EX, Reed RA, Fleetwood DM, Ye P, Cui S, Ma TP. Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2888-2893. DOI: 10.1109/Tns.2015.2497090 |
0.32 |
|
| 2015 |
Ni K, Zhang EX, Samsel IK, Schrimpf RD, Reed RA, Fleetwood DM, Sternberg AL, McCurdy MW, Ren S, Ma TP, Dong L, Zhang JY, Ye PD. Charge Collection Mechanisms in GaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2752-2759. DOI: 10.1109/Tns.2015.2495203 |
0.373 |
|
| 2013 |
Samsel IK, Zhang EX, Hooten NC, Funkhouser ED, Bennett WG, Reed RA, Schrimpf RD, McCurdy MW, Fleetwood DM, Weller RA, Vizkelethy G, Sun X, Ma TP, Saadat OI, Palacios T. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors Ieee Transactions On Nuclear Science. 60: 4439-4445. DOI: 10.1109/Tns.2013.2289383 |
0.452 |
|
| 2013 |
Sun X, Ma TP. Electrical Characterization of Gate Traps in FETs With Ge and III–V Channels Ieee Transactions On Device and Materials Reliability. 13: 463-479. DOI: 10.1109/Tdmr.2013.2276755 |
0.464 |
|
| 2013 |
Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102 |
0.328 |
|
| 2013 |
Sun X, Saadat OI, Chang-Liao KS, Palacios T, Cui S, Ma TP. Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method Applied Physics Letters. 102: 103504. DOI: 10.1063/1.4795717 |
0.301 |
|
| 2012 |
Sun X, Cui S, Alian A, Brammertz G, Merckling C, Lin D, Ma TP. AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact Ieee Electron Device Letters. 33: 438-440. DOI: 10.1109/Led.2011.2181318 |
0.384 |
|
| 2011 |
Ma TP. Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics Science in China Series F: Information Sciences. 54: 980-989. DOI: 10.1007/S11432-011-4228-5 |
0.357 |
|
| 2010 |
Reiner JW, Cui S, Liu Z, Wang M, Ahn CH, Ma TP. Inelastic electron tunneling spectroscopy study of thin gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 22: 2962-8. PMID 20354976 DOI: 10.1002/Adma.200904311 |
0.322 |
|
| 2010 |
Cui S, Peng C, Zhang W, Sun X, Yang J, Liu Z, Kornblum L, Eizenberg M, Ma TP. High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$) Nonvolatile Memory Technology Ieee Electron Device Letters. 31: 1443-1445. DOI: 10.1109/Led.2010.2072902 |
0.404 |
|
| 2010 |
Liu Z, Cui S, Kornblum L, Eizenberg M, Chang M, Ma TP. Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si Applied Physics Letters. 97: 202905. DOI: 10.1063/1.3518478 |
0.361 |
|
| 2010 |
Lubow A, Ismail-Beigi S, Ma TP. Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels Applied Physics Letters. 96. DOI: 10.1063/1.3367708 |
0.437 |
|
| 2009 |
Reiner JW, Posadas A, Wang M, Sidorov M, Krivokapic Z, Walker FJ, Ma TP, Ahn CH. Electrical properties and interfacial structure of epitaxial LaAlO 3 on Si (001) Journal of Applied Physics. 105. DOI: 10.1063/1.3148243 |
0.365 |
|
| 2008 |
Li N, Harmon ES, Salzman DB, Zakharov DN, Jeon JH, Stach E, Woodall JM, Wang XW, Ma TP, Walker F. Molecular beam epitaxy growth of InAs and In0.8 Ga0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1187-1190. DOI: 10.1116/1.2912086 |
0.401 |
|
| 2008 |
Yeh C, Holtzclaw K, Ramaswamy N, Gowda S, Brewer R, Graettinger T, Min K, Mouli C, Parat K, Ma TP. Time-Resolved Programming Current Measurement and Modeling for nand -type Nanodot Flash Cell Ieee Electron Device Letters. 29: 778-780. DOI: 10.1109/Led.2008.2000599 |
0.334 |
|
| 2008 |
Zheng JF, Tsai W, Li WP, Wang XW, Ma TP. Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si3N4 as gate dielectric Applied Physics Letters. 92: 232904. DOI: 10.1063/1.2943148 |
0.407 |
|
| 2008 |
Li N, Harmon ES, Hyland J, Salzman DB, Ma TP, Xuan Y, Ye PD. Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric Applied Physics Letters. 92: 143507. DOI: 10.1063/1.2908926 |
0.446 |
|
| 2008 |
Reiner JW, Posadas A, Wang M, Ma TP, Ahn CH. Growth and structural properties of crystalline LaAlO3 on Si (0 0 1) Microelectronic Engineering. 85: 36-38. DOI: 10.1016/J.Mee.2007.07.004 |
0.428 |
|
| 2008 |
Liu Y, Shim SI, Wang XW, Lee L, Tsai M, Ma TP. High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories Microelectronic Engineering. 85: 45-48. DOI: 10.1016/J.Mee.2007.01.008 |
0.403 |
|
| 2008 |
Ma TP. Electrical characterization of high-k gate dielectrics on semiconductors Applied Surface Science. 255: 672-675. DOI: 10.1016/J.Apsusc.2008.07.010 |
0.448 |
|
| 2008 |
Ma TP. Novel electrical characterization for advanced CMOS gate dielectrics Science in China, Series F: Information Sciences. 51: 774-779. DOI: 10.1007/S11432-008-0068-3 |
0.446 |
|
| 2007 |
Ma TP. Electrical characterization of advanced gate dielectrics for scaled CMOS technology Ecs Transactions. 8: 93-98. DOI: 10.1149/1.2767292 |
0.349 |
|
| 2007 |
Zheng JF, Tsai W, Lin TD, Lee YJ, Chen CP, Hong M, Kwo J, Cui S, Ma TP. Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion Applied Physics Letters. 91: 223502. DOI: 10.1063/1.2817742 |
0.437 |
|
| 2007 |
Yeh CC, Ma TP, Ramaswamy N, Rocklein N, Gealy D, Graettinger T, Min K. Frenkel-Poole trap energy extraction of atomic layer deposited Al 2O3 and HfxAlyO thin films Applied Physics Letters. 91. DOI: 10.1063/1.2786021 |
0.324 |
|
| 2007 |
Robinson SJ, Perkins CL, Shen TC, Tucker JR, Schenkel T, Wang XW, Ma TP. Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams Applied Physics Letters. 91. DOI: 10.1063/1.2786014 |
0.336 |
|
| 2007 |
Li WP, Wang XW, Liu YX, Shim SI, Ma TP. Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4 Applied Physics Letters. 90: 193503. DOI: 10.1063/1.2737374 |
0.392 |
|
| 2007 |
Wang M, He W, Ma TP, Edge LF, Schlom DG. Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3 Applied Physics Letters. 90: 053502. DOI: 10.1063/1.2437128 |
0.404 |
|
| 2006 |
Chen A, Young M, Li W, Ma TP, Woodall JM. Metal-insulator-semiconductor structure on low-temperature grown GaAs Applied Physics Letters. 89: 233514. DOI: 10.1063/1.2404605 |
0.358 |
|
| 2005 |
Ma TP, Bu HM, Wang XW, Song LY, He W, Wang M, Tseng H-, Tobin PJ. Special reliability features for Hf-based high-/spl kappa/ gate dielectrics Ieee Transactions On Device and Materials Reliability. 5: 36-44. DOI: 10.1109/Tdmr.2005.845329 |
0.425 |
|
| 2005 |
Ma TP, He W, Wang M. Inelastic Electron Tunnelling Spectroscopy (IETS) of High‐k Dielectrics Characterization and Metrology For Ulsi Technology. 788: 73-78. DOI: 10.1063/1.2062941 |
0.306 |
|
| 2005 |
Wang M, He W, Ma TP. Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps Applied Physics Letters. 86: 192113. DOI: 10.1063/1.1924893 |
0.374 |
|
| 2004 |
Zhu W, Han J, Ma TP. Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics Ieee Transactions On Electron Devices. 51: 98-105. DOI: 10.1109/Ted.2003.821384 |
0.359 |
|
| 2004 |
Zhu WJ, Ma TP. Temperature dependence of channel mobility in HfO/sub 2/-gated NMOSFETs Ieee Electron Device Letters. 25: 89-91. DOI: 10.1109/Led.2003.822648 |
0.35 |
|
| 2003 |
Liu YX, Caragianis-Broadbridge C, Lehman AH, McGuinness J, Ma TP. Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb 5 Ge 3 O 11 Thin Films for Memory Application Mrs Proceedings. 784. DOI: 10.1557/Proc-784-C11.9 |
0.325 |
|
| 2003 |
Ma TP. Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition Microelectronics Journal. 34: 363-370. DOI: 10.1016/S0026-2692(03)00026-0 |
0.454 |
|
| 2002 |
Wang XW, Bu HM, Laube BL, Caragianis-Broadbridge C, Ma TP. Improving 4H-SiC/SiO2 interface properties by depositing ultra-thin Si nitride layer prior to formation of SiO2 and annealing Materials Science Forum. 389: 993-996. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.993 |
0.392 |
|
| 2002 |
Zhu WJ, Ma TP, Zafar S, Tamagawa T. Charge trapping in ultrathin hafnium oxide Ieee Electron Device Letters. 23: 597-599. DOI: 10.1109/Led.2002.804029 |
0.436 |
|
| 2002 |
Ma TP, Han J. Why is nonvolatile ferroelectric memory field-effect transistor still elusive? Ieee Electron Device Letters. 23: 386-388. DOI: 10.1109/Led.2002.1015207 |
0.316 |
|
| 2002 |
Zhu WJ, Ma T, Tamagawa T, Kim J, Di Y. Current transport in metal/hafnium oxide/silicon structure Ieee Electron Device Letters. 23: 97-99. DOI: 10.1109/55.981318 |
0.388 |
|
| 2002 |
She M, King T, Hu C, Zhu W, Luo Z, Han J, Ma T. JVD silicon nitride as tunnel dielectric in p-channel flash memory Ieee Electron Device Letters. 23: 91-93. DOI: 10.1109/55.981316 |
0.365 |
|
| 2001 |
Melik-Martirosian A, Ma TP. Lateral profiling of interface traps and oxide charge in MOSFET devices: Charge pumping versus DCIV Ieee Transactions On Electron Devices. 48: 2303-2309. DOI: 10.1109/16.954469 |
0.411 |
|
| 2001 |
Gaffey B, Guido LJ, Wang XW, Ma TP. High-quality oxide/nitride/oxide gate insulator for GaN MIS structures Ieee Transactions On Electron Devices. 48: 458-464. DOI: 10.1109/16.906436 |
0.46 |
|
| 2001 |
Han J, Guo X, Broadbridge CC, Ma TP, Ils A, Cantoni M, Sallese J, Fazan P. Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si Integrated Ferroelectrics. 34: 65-72. DOI: 10.1080/10584580108012875 |
0.438 |
|
| 2001 |
Luo ZJ, Guo X, Ma TP, Tamagawa T. Temperature dependence of gate currents in thin Ta2O5 and TiO2 films Applied Physics Letters. 79: 2803-2804. DOI: 10.1063/1.1412823 |
0.425 |
|
| 2000 |
Zhu WJ, Wang XW, Ma TP, Tucker JB, Rao MV. Highly durable SiC nMISFET's at 450°c Materials Science Forum. 338: 1311-1314. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1311 |
0.389 |
|
| 2000 |
Campbell SA, He B, Smith R, Ma T, Hoilien N, Taylor C, Gladfelter WL. Group IVB oxides as high permittivity gate insulators Materials Research Society Symposium - Proceedings. 606: 23-32. DOI: 10.1557/Proc-606-23 |
0.423 |
|
| 2000 |
Ils A, Cantoni M, Sallese J-, Fazan P, Han J-, Guo X, Ma TP. Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers Journal of Vacuum Science & Technology B. 18: 1915-1918. DOI: 10.1116/1.1303853 |
0.443 |
|
| 2000 |
Yeo YC, Lu Q, Lee WC, King T, Hu C, Wang X, Guo X, Ma TP. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 21: 540-542. DOI: 10.1109/55.877204 |
0.431 |
|
| 2000 |
Wang XW, Luo ZJ, Ma T. High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric Ieee Transactions On Electron Devices. 47: 458-463. DOI: 10.1109/16.822294 |
0.432 |
|
| 1999 |
Karamcheti A, Watt V, Luo T, Brady D, Shaapur F, Vishnubhotla L, Gale G, Huff H, Jackson M, Torres K, Diebold A, Guan J, Gilmer M, Brown G, Bersuker G, ... ... Ma T, et al. Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique Mrs Proceedings. 592. DOI: 10.1557/Proc-592-307 |
0.401 |
|
| 1999 |
Ma TP. JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics Mrs Proceedings. 567: 73. DOI: 10.1557/Proc-567-73 |
0.427 |
|
| 1999 |
Lu W, Wang X, Hammond R, Kuliev A, Koester S, Chu J, Ismail K, Ma T, Adesida I. p-Type SiGe transistors with low gate leakage using SiN gate dielectric Ieee Electron Device Letters. 20: 514-516. DOI: 10.1109/55.791927 |
0.371 |
|
| 1999 |
Khare M, Wang XW, Ma TP. Transconductance in nitride-gate or oxynitride-gate transistors Ieee Electron Device Letters. 20: 57-59. DOI: 10.1109/55.737573 |
0.444 |
|
| 1999 |
Shi Y, Wang X, Ma T. Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics Ieee Transactions On Electron Devices. 46: 362-368. DOI: 10.1109/16.740903 |
0.385 |
|
| 1998 |
Wang XW, Takahashi Y, Ma TP, Cui GJ, Tamagawa T, Halpern B, Schmitt JJ. Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC Materials Science Forum. 865-868. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.865 |
0.368 |
|
| 1998 |
Shi Y, Ma TP, Prasad S, Dhanda S. Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFETs Ieee Electron Device Letters. 19: 391-393. DOI: 10.1109/55.720196 |
0.324 |
|
| 1998 |
Shi Y, Wang X, Ma TP. Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics Ieee Electron Device Letters. 19: 388-390. DOI: 10.1109/55.720195 |
0.387 |
|
| 1998 |
Guo X, Ma TP. Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content Ieee Electron Device Letters. 19: 207-209. DOI: 10.1109/55.678546 |
0.452 |
|
| 1998 |
Shi Y, Ma TP, Prasad S, Dhanda S. Polarity dependent gate tunneling currents in dual-gate CMOSFETs Ieee Transactions On Electron Devices. 45: 2355-2360. DOI: 10.1109/16.726656 |
0.343 |
|
| 1998 |
Ma TP. Making silicon nitride film a viable gate dielectric Ieee Transactions On Electron Devices. 45: 680-690. DOI: 10.1109/16.661229 |
0.51 |
|
| 1998 |
Chen C, Ma T. Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's Ieee Transactions On Electron Devices. 45: 512-520. DOI: 10.1109/16.658688 |
0.406 |
|
| 1998 |
Han J, Guo X, Ma TP. Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer Integrated Ferroelectrics. 22: 213-221. DOI: 10.1080/10584589808208043 |
0.43 |
|
| 1998 |
Lye W, Ma T, Barker RC, Hasegawa E, Hu Y, Kuehne J, Frystak D. Tunneling spectroscopy of the silicon metal-oxide-semiconductor system Characterization and Metrology For Ulsi Technology. 449: 261-265. DOI: 10.1063/1.56806 |
0.42 |
|
| 1997 |
Han J, Gu J, Ma TP. SrBi2Ta2O9(SBT) thin films prepared by electrostatic spray Integrated Ferroelectrics. 14: 229-235. DOI: 10.1080/10584589708019996 |
0.332 |
|
| 1997 |
Lye WK, Hasegawa E, Ma TP, Barker RC, Hu Y, Kuehne J, Frystak D. Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system Applied Physics Letters. 71: 2523-2525. DOI: 10.1063/1.120106 |
0.404 |
|
| 1997 |
Ma TP. Gate dielectric properties of silicon nitride films formed by jet vapor deposition Applied Surface Science. 259-267. DOI: 10.1016/S0169-4332(97)80091-8 |
0.492 |
|
| 1996 |
Mallik A, Wang XW, Ma TP, Cui GJ, Tamagawa T, Halpern BL, Schmitt JJ. Interface Traps In Jet-Vapor-Deposited Silicon Nitride-Silicon Capacitors Journal of Applied Physics. 79: 8507-8511. DOI: 10.1063/1.362529 |
0.454 |
|
| 1995 |
San KT, Kaya, Ma TP. Effects of Erase Source Bias on Flash EPROM Device Reliability Ieee Transactions On Electron Devices. 42: 150-159. DOI: 10.1109/16.370023 |
0.406 |
|
| 1994 |
Tsai M, Ma TP, Hook TB. Channel length dependence of random telegraph signal in sub-micron MOSFET's Ieee Electron Device Letters. 15: 504-506. DOI: 10.1109/55.338418 |
0.321 |
|
| 1994 |
Zhang B, Balasinski A, Ma TP. Hot-carrier effects on gate-induced-drain-leakage (GIDL) current in thin-film SOI/NMOSFET's Ieee Electron Device Letters. 15: 169-171. DOI: 10.1109/55.291597 |
0.373 |
|
| 1994 |
Tsai M, Zhang B, Ma T, Wang LK. Random telegraph signals in accumulation-mode SOI/nMOSFETs Ieee Electron Device Letters. 15: 135-137. DOI: 10.1109/55.285405 |
0.356 |
|
| 1994 |
Tsai M, Ma T. The impact of device scaling on the current fluctuations in MOSFET's Ieee Transactions On Electron Devices. 41: 2061-2068. DOI: 10.1109/16.333823 |
0.341 |
|
| 1993 |
Ma TP. Reliability issues concerning thin gate SiO2 and SiO2/Si interface for ULSI applications Nuclear Inst. and Methods in Physics Research, B. 74: 295-300. DOI: 10.1016/0168-583X(93)95064-C |
0.348 |
|
| 1993 |
Ma TP. Generation and transformation of interface traps in MOS structures Microelectronic Engineering. 22: 197-200. DOI: 10.1016/0167-9317(93)90156-Y |
0.345 |
|
| 1993 |
Balasiński A, Tsai MH, Vishnubhotla L, Ma TP, Tseng HH, Tobin PJ. Interface properties in fluorinated (100) and (111)Si/SiO 2 MOSFETs Microelectronic Engineering. 22: 97-100. DOI: 10.1016/0167-9317(93)90139-V |
0.461 |
|
| 1993 |
Anderson WR, Lombardi DR, Mitev PH, Ma TP, Wheeler RG. Determination of Si/SiO2 interfacial roughness using weak localization Microelectronic Engineering. 22: 43-46. DOI: 10.1016/0167-9317(93)90127-Q |
0.377 |
|
| 1992 |
Ma TP. Effects of Fluorine on MOS Properties Mrs Proceedings. 262. DOI: 10.1557/Proc-262-741 |
0.302 |
|
| 1992 |
Wang X, Balasinski A, Ma TP, Nishioka Y. Pre‐Oxidation Fluorine Implantation into Si Process‐Related MOS Characteristics Journal of the Electrochemical Society. 139: 238-241. DOI: 10.1149/1.2069176 |
0.36 |
|
| 1992 |
Ma TP. Metal-oxide-semiconductor gate oxide reliability and the role of fluorine Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 705-712. DOI: 10.1116/1.577714 |
0.304 |
|
| 1992 |
Yoshino A, Ma TP, Okumura K. Hot-Carrier Effects in Fully Depleted Submicrometer NMOS/SIMOX as Influenced by Back Interface Degradation Ieee Electron Device Letters. 13: 522-524. DOI: 10.1109/55.192821 |
0.31 |
|
| 1992 |
San KT, Ma TP. Determination of Trapped Oxide Charge in Flash EPROM's and MOSFET's with Thin Oxides Ieee Electron Device Letters. 13: 439-441. DOI: 10.1109/55.192784 |
0.302 |
|
| 1992 |
Zhang B, Yoshino A, Ma TP. Single-Transistor-Latch-Induced Degradation of Front- and Back-Channel Thin-Film SOI Transistors Ieee Electron Device Letters. 13: 282-284. DOI: 10.1109/55.145054 |
0.367 |
|
| 1992 |
Tsai M-, Ma TP. Effect of radiation-induced interface traps on 1/f noise in MOSFET's Ieee Transactions On Nuclear Science. 39: 2178-2185. DOI: 10.1109/23.211419 |
0.355 |
|
| 1992 |
Balasinski A, Ma TP. Ionizing radiation damage near CMOS transistor channel edges Ieee Transactions On Nuclear Science. 39: 1998-2003. DOI: 10.1109/23.211396 |
0.359 |
|
| 1992 |
Hwang CL, Chen BA, Ma TP, Golz JW, Di YD. Ferroelectric Pb(Zr,Ti)03 Thin Films Prepared by Gas Jet Deposition, Integrated Ferroelectrics. 2: 221-229. DOI: 10.1080/10584589208215745 |
0.3 |
|
| 1992 |
Vishnubhotla L, Ma TP. Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection Journal of Applied Physics. 71: 1058-1060. DOI: 10.1063/1.350399 |
0.379 |
|
| 1992 |
Tsai M, Muto H, Ma TP. Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors Applied Physics Letters. 61: 1691-1693. DOI: 10.1063/1.108453 |
0.342 |
|
| 1992 |
Anderson WR, Wheeler RG, Ma TP. Observation of interface traps in the silicon conduction band at the (100)Si/SiO2 interface at 4.2 K Applied Physics Letters. 61: 1107-1109. DOI: 10.1063/1.107683 |
0.433 |
|
| 1992 |
Wang XW, Ma TP. Passivation of (111) Si/SiO2 interface by fluorine Applied Physics Letters. 60: 2634-2636. DOI: 10.1063/1.106878 |
0.435 |
|
| 1992 |
Balasinski A, Chen W, Ma T. Effects of combined X-ray irradiation and hot-electron injection on NMOS transistors Journal of Electronic Materials. 21: 737-743. DOI: 10.1007/Bf02655604 |
0.352 |
|
| 1991 |
Liu ZH, Nee P, Ko PK, Hu C, Sodini CG, Gross BJ, Ma TP, Cheng YC. A Comparative Study of High-Field Endurance for Reoxidized-Nitrided and Fluorinated Oxides The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1991.A-2-2 |
0.33 |
|
| 1991 |
Nishioka Y, Kato M, Ohji Y, Ma TP. Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors Journal of Applied Physics. 69: 528-530. DOI: 10.1063/1.347700 |
0.405 |
|
| 1991 |
Haneji N, Vishnubhotla L, Ma TP. Possible observation of Pb0 and Pb1 centers at irradiated (100)Si/SiO2 interface from electrical measurements Applied Physics Letters. 59: 3416-3418. DOI: 10.1063/1.105693 |
0.365 |
|
| 1991 |
Vishnubhotla L, Ma TP, Tseng H, Tobin PJ. Interface trap generation and electron trapping in fluorinated SiO2 Applied Physics Letters. 59: 3595-3597. DOI: 10.1063/1.105643 |
0.443 |
|
| 1991 |
Nishioka Y, Itoga T, Ohyu K, Ma T. Improving hot-electron hardness of narrow channel MOSFETs by fluorine implantation Solid-State Electronics. 34: 1197-1200. DOI: 10.1016/0038-1101(91)90057-6 |
0.34 |
|
| 1990 |
Wang Y, Ma TP, Barker RC. Early stages of interface-trap transformation in metal-SiO 2-(100)Si structures Journal of Applied Physics. 68: 2520-2522. DOI: 10.1063/1.346471 |
0.39 |
|
| 1990 |
Vishnubhotla L, Chen W, Ma TP. ac conductance measurements on radiation‐damaged (100) Si/SiO2 interface after defect transformation Applied Physics Letters. 57: 1778-1780. DOI: 10.1063/1.104064 |
0.371 |
|
| 1990 |
Yu B, Arai E, Nishioka Y, Ohji Y, Iwata S, Ma TP. Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy Applied Physics Letters. 56: 1430-1432. DOI: 10.1063/1.103206 |
0.353 |
|
| 1989 |
Fedynyshyn TH, Grynkewich GW, Chen BA, Ma TP. The Effect of Metal Masks on the Plasma Etch Rate of Silicon Journal of the Electrochemical Society. 136: 1799-1804. DOI: 10.1149/1.2097015 |
0.322 |
|
| 1989 |
Nishioka Y, Ohyu K, Ohji Y, Kato M, Silva EFd, Ma TP. Radiation hardened micron and submicron MOSFETs containing fluorinated oxides Ieee Transactions On Nuclear Science. 36: 2116-2123. DOI: 10.1109/23.45413 |
0.424 |
|
| 1989 |
Wang Y, Ma TP, Barker RC. Orientation dependence of interface-trap transformation Ieee Transactions On Nuclear Science. 36: 1784-1791. DOI: 10.1109/23.45370 |
0.387 |
|
| 1989 |
Ma TP. Interface trap transformation in radiation or hot-electron damaged MOS structures Semiconductor Science and Technology. 4: 1061-1079. DOI: 10.1088/0268-1242/4/12/009 |
0.398 |
|
| 1989 |
Nishioka Y, Ohyu K, Ohji Y, Natsuaki N, Mukai K, Ma TP. The effect of fluorine implantation on the interface radiation hardness of Si‐gate metal‐oxide‐semiconductor transistors Journal of Applied Physics. 66: 3909-3912. DOI: 10.1063/1.344012 |
0.402 |
|
| 1989 |
Wang Y, Ma TP, Barker RC. Interface-trap transformation at radiation-damaged (111)Si/SiO2 interface Applied Physics Letters. 54: 2339-2341. DOI: 10.1063/1.101522 |
0.4 |
|
| 1989 |
Nishioka Y, Ohji Y, Mukai K, Sugano T, Wang Y, Ma TP. Dielectric characteristics of fluorinated ultradry SiO2 Applied Physics Letters. 54: 1127-1129. DOI: 10.1063/1.101479 |
0.43 |
|
| 1988 |
Silva EFd, Nishioka Y, Ma TP. Radiation Response of MOS Structures Containing Oxides Grown in a NF3/O2 Oxidizing Ambient The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1988.B-1-1 |
0.325 |
|
| 1988 |
Wang XW, Wang Y, Nishioka Y, Silva EFd, Ma TP. Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive Applied Physics Letters. 53: 592-594. DOI: 10.1063/1.99866 |
0.418 |
|
| 1988 |
Nishioka Y, Ma TP. Interface traps at midgap during defect transformation in (100) Si/SiO2 Applied Physics Letters. 53: 1744-1746. DOI: 10.1063/1.99776 |
0.393 |
|
| 1988 |
Wang Y, Nishioka Y, Ma TP, Barker RC. Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane Applied Physics Letters. 52: 573-575. DOI: 10.1063/1.99397 |
0.426 |
|
| 1988 |
Nishioka Y, Da Silva EF, Ma TP. Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injection Applied Physics Letters. 52: 720-722. DOI: 10.1063/1.99358 |
0.424 |
|
| 1988 |
Kaya C, Ma TP, Barker RC. Properties of plasma-deposited Si-rich silicon nitride films in current enhancement injectors Journal of Applied Physics. 64: 3958-3964. DOI: 10.1063/1.341353 |
0.373 |
|
| 1988 |
Kaya C, Ma TP, Chen TC, Barker RC. Properties of Si-rich SiNx:H films prepared by plasma-enhanced chemical vapor deposition Journal of Applied Physics. 64: 3949-3957. DOI: 10.1063/1.341352 |
0.402 |
|
| 1987 |
Fedynyshyn TH, Grynkewich GW, Hook TB, Liu M, Ma T. The Effect of Aluminum vs. Photoresist Masking on the Etching Rates of Silicon and Silicon Dioxide in CF 4 / O 2 Plasmas Journal of the Electrochemical Society. 134: 206-209. DOI: 10.1149/1.2100408 |
0.356 |
|
| 1987 |
Fedynyshyn TH, Grynkewich GW, Ma T. Mask Dependent Etch Rates II The Effect of Aluminum vs. Photoresist Masking on the Etch Rates of Silicon and Silicon Dioxide in Fluorine Containing Plasmas Journal of the Electrochemical Society. 134: 2580-2585. DOI: 10.1149/1.2100246 |
0.31 |
|
| 1987 |
da Silva EF, Nishiokat Y, Ma TP. Radiation response of mos capacitors containing fluorinated oxides Ieee Transactions On Nuclear Science. 34: 1190-1195. DOI: 10.1109/TNS.1987.4337451 |
0.344 |
|
| 1987 |
Nishioka Y, da Silva EF, Ma TP. Radiation-Induced interface traps in mo/sio 2/si capacitors Ieee Transactions On Nuclear Science. 34: 1166-1171. DOI: 10.1109/TNS.1987.4337447 |
0.334 |
|
| 1987 |
Nishioka Y, Da Silva EF, Ma TP. Time-Dependent Evolution of Interface Traps in Hot-Electron Damaged Metal/SiO<inf>2</inf>/Si Capacitors Ieee Electron Device Letters. 8: 566-568. DOI: 10.1109/Edl.1987.26730 |
0.449 |
|
| 1987 |
Da Silva EF, Nishioka Y, Ma TP. Effects of trichloroethane during oxide growth on radiation-induced interface traps in Metal/SiO2/Si capacitors Applied Physics Letters. 51: 1262-1264. DOI: 10.1063/1.98699 |
0.313 |
|
| 1987 |
Da Silva EF, Nishioka Y, Ma TP. Two distinct interface trap peaks in radiation-damaged metal/SiO 2/Si structures Applied Physics Letters. 51: 270-272. DOI: 10.1063/1.98470 |
0.34 |
|
| 1986 |
Hook TB, Ma TP. Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain Applied Physics Letters. 48: 1208-1210. DOI: 10.1063/1.96983 |
0.426 |
|
| 1985 |
Hook TB, Ma TP. Perimeter‐related current in high‐field tunneling into SiO2 Applied Physics Letters. 47: 417-419. DOI: 10.1063/1.96131 |
0.378 |
|
| 1984 |
Holland S, Chen IC, Ma TP, Hu C. On physical models for gate oxide breakdown Ieee Electron Device Letters. 5: 302-305. DOI: 10.1109/Edl.1984.25925 |
0.432 |
|
| 1984 |
Wei CC, Ma TP. Reduction of apparent dopant concentration in the surface space charge layer of oxidized silicon by ionizing radiation Applied Physics Letters. 45: 900-902. DOI: 10.1063/1.95407 |
0.43 |
|
| 1983 |
Chen TC, Ma TP, Barker RC. Infrared transparent and electrically conductive thin film of In 2O3 Applied Physics Letters. 43: 901-903. DOI: 10.1063/1.94199 |
0.326 |
|
| 1983 |
Chin MR, Ma TP. Gate-width dependence of radiation-induced interface traps in metal/SiO2/Si devices Applied Physics Letters. 42: 883-885. DOI: 10.1063/1.93774 |
0.443 |
|
| 1982 |
Chin MR, Ma TP. Photocurrent in thermal SiO2 under x-ray irradiation: Significance of contact injection Journal of Applied Physics. 53: 3673-3679. DOI: 10.1063/1.331152 |
0.416 |
|
| 1981 |
Lai SK, Dressendorfer PV, Ma TP, Barker RC. Optically induced bistable states in metal/tunnel-oxide/semiconductor (MTOS) junctions Applied Physics Letters. 38: 41-44. DOI: 10.1063/1.92126 |
0.328 |
|
| 1981 |
Pan CA, Ma TP. Highly transparent conductive films of thermally evaporated In 2 O 3 Journal of Electronic Materials. 10: 43-57. DOI: 10.1007/Bf02654901 |
0.374 |
|
| 1980 |
Pan CA, Ma TP. High‐quality transparent conductive indium oxide films prepared by thermal evaporation Applied Physics Letters. 37: 163-165. DOI: 10.1063/1.91809 |
0.394 |
|
| 1980 |
Dressendorfer PV, Lai SK, Barker RC, Ma TP. Processing dependence of metal/tunnel-oxide/silicon junctions Applied Physics Letters. 36: 850-852. DOI: 10.1063/1.91346 |
0.409 |
|
| 1980 |
Ma TP, Chin MR. Removal of radiation-induced electron traps in MOS structures by rf annealing Applied Physics Letters. 36: 81-84. DOI: 10.1063/1.91283 |
0.381 |
|
| 1979 |
Ma TP, Miyauchi K. MIS structures based on spin‐on SiO2 on GaAs Applied Physics Letters. 34: 88-90. DOI: 10.1063/1.90570 |
0.384 |
|
| 1979 |
Ma WH, Ma TP. The effect of RF annealing upon electron-beam irradiated MIS structures Solid-State Electronics. 22: 663-666. DOI: 10.1016/0038-1101(79)90141-2 |
0.402 |
|
| 1977 |
Scoggan GA, Ma TP. Effects of electron‐beam radiation on MOS structures as influenced by the silicon dopant Journal of Applied Physics. 48: 294-300. DOI: 10.1063/1.323376 |
0.396 |
|
| 1976 |
Ma TP, Yun BH, Dimaria DJ, Scoggan GA. Effects of electron-beam irradiation on the properties of CVD Si 3N4 films in MNOS structures Journal of Applied Physics. 47: 1599-1604. DOI: 10.1063/1.322777 |
0.434 |
|
| 1975 |
Ma TP, Scoggan G, Leone R. Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitors Applied Physics Letters. 27: 61-63. DOI: 10.1063/1.88366 |
0.364 |
|
| 1975 |
Ma TP. Oxide thickness dependence of electron-induced surface states in MOS structures Applied Physics Letters. 27: 615-617. DOI: 10.1063/1.88308 |
0.381 |
|
| 1974 |
Ma TP, Barker RC. Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions Journal of Applied Physics. 45: 317-321. DOI: 10.1063/1.1662978 |
0.439 |
|
| 1974 |
Ma TP, Barker RC. Surface-state spectra from thick-oxide MOS tunnel junctions Solid State Electronics. 17: 913-929. DOI: 10.1016/0038-1101(74)90044-6 |
0.408 |
|
| Show low-probability matches. |