| Year |
Citation |
Score |
| 2019 |
Xian M, Fares C, Ren F, Gila BP, Chen Y, Liao Y, Tadjer M, Pearton SJ. Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C Journal of Vacuum Science & Technology B. 37: 061201. DOI: 10.1116/1.5125006 |
0.571 |
|
| 2019 |
Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3 Semiconductor Science and Technology. 34: 025006. DOI: 10.1088/1361-6641/Aaf8D7 |
0.451 |
|
| 2019 |
Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 Journal of Electronic Materials. 48: 1568-1573. DOI: 10.1007/S11664-018-06885-X |
0.515 |
|
| 2018 |
Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 Ecs Journal of Solid State Science and Technology. 7: P519-P523. DOI: 10.1149/2.0041810Jss |
0.465 |
|
| 2018 |
Fares C, Ren F, Hays DC, Gila BP, Pearton SJ. Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 Ecs Journal of Solid State Science and Technology. 8: Q3001-Q3006. DOI: 10.1149/2.0021907Jss |
0.465 |
|
| 2018 |
Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 Journal of Vacuum Science & Technology B. 36: 061207. DOI: 10.1116/1.5052620 |
0.508 |
|
| 2018 |
Fares C, Ren F, Hays DC, Gila BP, Tadjer M, Hobart KD, Pearton SJ. Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 Applied Physics Letters. 113: 182101. DOI: 10.1063/1.5055941 |
0.474 |
|
| 2017 |
Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3 Japanese Journal of Applied Physics. 56: 071101. DOI: 10.7567/Jjap.56.071101 |
0.47 |
|
| 2017 |
Ren F, Pearton SJ, Kang TS, Cheney DJ, Gila BP. Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2251166 |
0.476 |
|
| 2017 |
Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 041201. DOI: 10.1116/1.4984097 |
0.507 |
|
| 2017 |
Hays DC, Gila BP, Pearton SJ, Trucco A, Thorpe R, Ren F. Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011206. DOI: 10.1116/1.4973882 |
0.525 |
|
| 2017 |
Hays DC, Gila BP, Pearton SJ, Ren F. Energy band offsets of dielectrics on InGaZnO4 Applied Physics Reviews. 4: 021301. DOI: 10.1063/1.4980153 |
0.529 |
|
| 2017 |
Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Band alignment of Al2O3 with (−201) β-Ga2O3 Vacuum. 142: 52-57. DOI: 10.1016/J.Vacuum.2017.05.006 |
0.47 |
|
| 2017 |
Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Valence and conduction band offsets in AZO/Ga2O3 heterostructures Vacuum. 141: 103-108. DOI: 10.1016/J.Vacuum.2017.03.031 |
0.494 |
|
| 2017 |
Hays DC, Gila B, Pearton S, Thorpe R, Ren F. Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions Vacuum. 136: 137-141. DOI: 10.1016/J.Vacuum.2016.12.001 |
0.5 |
|
| 2017 |
Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Band offsets in ITO/Ga2O3 heterostructures Applied Surface Science. 422: 179-183. DOI: 10.1016/J.Apsusc.2017.05.262 |
0.519 |
|
| 2016 |
Hays DC, Gila BP, Pearton SJ, Ren F. Valence and Conduction Band Offsets in Sputtered LaAlO3/InGaZnO4Heterostructures Ecs Journal of Solid State Science and Technology. 5: P680-P684. DOI: 10.1149/2.0261612Jss |
0.441 |
|
| 2016 |
Kang TS, Lin YH, Ahn S, Ren F, Gila BP, Pearton SJ, Cheney DJ. Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936861 |
0.441 |
|
| 2016 |
Wang X, Berke K, Rudawski NG, Venkatachalam DK, Elliman RG, Fridmann J, Hebard AF, Ren F, Gila BP, Appleton BR. Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing Journal of Applied Physics. 120: 025105. DOI: 10.1063/1.4955137 |
0.442 |
|
| 2016 |
Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F. Band alignment in ZrSiO4/ZnO heterojunctions Vacuum. 125: 113-117. DOI: 10.1016/J.Vacuum.2015.12.010 |
0.504 |
|
| 2015 |
Hays DC, Gila BP, Pearton SJ, Ren F. Band offsets in HfSiO4/IGZO heterojunctions Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 061209. DOI: 10.1116/1.4936117 |
0.518 |
|
| 2015 |
Kang TS, Ren F, Gila BP, Pearton SJ, Patrick E, Cheney DJ, Law M, Zhang ML. Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931790 |
0.515 |
|
| 2015 |
Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F, Jang TS. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931035 |
0.535 |
|
| 2015 |
Hays DC, Gila BP, Pearton SJ, Ren F. ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy Vacuum. 122: 195-200. DOI: 10.1016/J.Vacuum.2015.09.029 |
0.478 |
|
| 2015 |
Hays DC, Gila BP, Lambers ES, Pearton SJ, Ren F. Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures Vacuum. 116: 60-64. DOI: 10.1016/J.Vacuum.2015.02.017 |
0.513 |
|
| 2014 |
Park JC, Kim KW, Gila BP, Lambers ES, Norton DP, Pearton SJ, Ren F, Kim JK, Cho H. Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. Journal of Nanoscience and Nanotechnology. 14: 8445-8. PMID 25958543 DOI: 10.1166/Jnn.2014.9935 |
0.462 |
|
| 2014 |
Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665 DOI: 10.1166/Jnn.2014.7939 |
0.478 |
|
| 2014 |
Hwang YH, Ahn S, Chen D, Ren F, Gila BP, Hays D, Pearton SJ, Lo CF, Johnson JW. High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891966 |
0.557 |
|
| 2014 |
Liu L, Xi Y, Ahn S, Ren F, Gila BP, Pearton SJ, Kravchenko II. Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 052201. DOI: 10.1116/1.4891168 |
0.553 |
|
| 2013 |
Douglas EA, Zeenberg D, Maeda M, Gila BP, Abernathy CR, Pearton SJ, Ren F. Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42. DOI: 10.1149/2.002306Ssl |
0.572 |
|
| 2013 |
Douglas EA, Gila BP, Abernathy CR, Ren F, Pearton SJ. GaN High Electron Mobility Transistor Degradation: Effect of RF Stress Ecs Transactions. 50: 261-272. DOI: 10.1149/05006.0261ecst |
0.405 |
|
| 2013 |
Hwang YH, Liu L, Velez C, Ren F, Gila BP, Hays D, Pearton SJ, Lambers E, Kravchenko II, Lo CF, Johnson JW. GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4816477 |
0.572 |
|
| 2013 |
Cheney DJ, Douglas EA, Liu L, Lo CF, Xi YY, Gila BP, Ren F, Horton D, Law ME, Smith DJ, Pearton SJ. Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074019 |
0.478 |
|
| 2012 |
Cheney DJ, Douglas EA, Liu L, Lo CF, Gila BP, Ren F, Pearton SJ. Degradation mechanisms for GaN and GaAs high speed transistors Materials. 5: 2498-2520. DOI: 10.3390/Ma5122498 |
0.503 |
|
| 2012 |
Cheney D, Deist R, Gila B, Ren F, Whiting P, Navales J, Douglas E, Pearton S. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method Materials Research Society Symposium Proceedings. 1432: 143-149. DOI: 10.1557/Opl.2012.1138 |
0.461 |
|
| 2012 |
Wang X, Lo CF, Liu L, Cuervo CV, Fan R, Pearton SJ, Gila B, Johnson MR, Zhou L, Smith DJ, Kim J, Laboutin O, Cao Y, Johnson JW. 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4751278 |
0.388 |
|
| 2012 |
Lo C, Liu L, Ren F, Pearton SJ, Gila BP, Kim H, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)] Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 043401. DOI: 10.1116/1.4737150 |
0.457 |
|
| 2012 |
Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4729285 |
0.474 |
|
| 2012 |
Tongay S, Lemaitre M, Miao X, Gila B, Appleton BR, Hebard AF. Rectification at graphene-semiconductor interfaces: Zero-gap semiconductor-based diodes Physical Review X. 2: 1-10. DOI: 10.1103/Physrevx.2.011002 |
0.377 |
|
| 2012 |
Lemaitre MG, Tongay S, Wang X, Venkatachalam DK, Fridmann J, Gila BP, Hebard AF, Ren F, Elliman RG, Appleton BR. Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing Applied Physics Letters. 100. DOI: 10.1063/1.4707383 |
0.424 |
|
| 2012 |
Cho H, Douglas EA, Gila BP, Craciun V, Lambers ES, Ren F, Pearton SJ. Band offsets in HfO2/InGaZnO4 heterojunctions Applied Physics Letters. 100: 012105. DOI: 10.1063/1.3673905 |
0.486 |
|
| 2012 |
Appleton BR, Tongay S, Lemaitre M, Gila B, Fridmann J, Mazarov P, Sanabia JE, Bauerdick S, Bruchhaus L, Mimura R, Jede R. Materials modifications using a multi-ion beam processing and lithography system Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 272: 153-157. DOI: 10.1016/J.Nimb.2011.01.054 |
0.314 |
|
| 2012 |
Cheney DJ, Deist R, Gila B, Navales J, Ren F, Pearton SJ. Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping Microelectronics Reliability. 52: 2884-2888. DOI: 10.1016/J.Microrel.2012.08.018 |
0.471 |
|
| 2012 |
Douglas EA, Chang CY, Gila BP, Holzworth MR, Jones KS, Liu L, Kim J, Jang S, Via GD, Ren F, Pearton SJ. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. 52: 23-28. DOI: 10.1016/J.Microrel.2011.09.018 |
0.528 |
|
| 2011 |
Pearton SJ, Gila BP, Appleton B, Hays D, Ren F, Fridmann J, Mazarov P. Nanoengineering of Semiconductor Nanowires-Synthesis, Processing and Sensing Applications Journal of Nanoengineering and Nanomanufacturing. 1: 35-49. DOI: 10.1166/Jnan.2011.1009 |
0.475 |
|
| 2011 |
Cho H, Douglas EA, Scheurmann A, Gila BP, Craciun V, Lambers ES, Pearton SJ, Ren F. Al2O3∕InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy Electrochemical and Solid-State Letters. 14: H431. DOI: 10.1149/2.001111Esl |
0.431 |
|
| 2011 |
Lo C, Liu L, Kang T, Davies R, Gila BP, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ, Ren F. Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 14: H264. DOI: 10.1149/1.3578388 |
0.747 |
|
| 2011 |
Chang CY, Douglas EA, Kim J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Cullen DA, Zhou L, Smith DJ, Jang S, Pearton SJ. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors Ieee Transactions On Device and Materials Reliability. 11: 187-193. DOI: 10.1109/Tdmr.2010.2103314 |
0.492 |
|
| 2011 |
Tongay S, Lemaitre M, Schumann T, Berke K, Appleton BR, Gila B, Hebard AF. Graphene/GaN Schottky diodes: Stability at elevated temperatures Applied Physics Letters. 99. DOI: 10.1063/1.3628315 |
0.325 |
|
| 2011 |
Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] Applied Physics Letters. 99: 059901. DOI: 10.1063/1.3617417 |
0.694 |
|
| 2011 |
Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 98: 242110. DOI: 10.1063/1.3600340 |
0.756 |
|
| 2011 |
Douglas EA, Chang CY, Cheney DJ, Gila BP, Lo CF, Lu L, Holzworth R, Whiting P, Jones K, Via GD, Kim J, Jang S, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress Microelectronics Reliability. 51: 207-211. DOI: 10.1016/J.Microrel.2010.09.024 |
0.468 |
|
| 2010 |
Chu BH, Kang BS, Hung SC, Chen KH, Ren F, Sciullo A, Gila BP, Pearton SJ. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate. Journal of Diabetes Science and Technology. 4: 171-9. PMID 20167182 DOI: 10.1177/193229681000400122 |
0.438 |
|
| 2010 |
Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, et al. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1044-1047. DOI: 10.1116/1.3491038 |
0.701 |
|
| 2010 |
Chu BH, Kang BS, Chang CY, Ren F, Goh A, Sciullo A, Wu W, Lin J, Gila BP, Pearton SJ, Johnson JW, Piner EL, Linthicum KJ. Wireless detection system for glucose and pH sensing in exhaled breath condensate using A1GaN/GaN high electron mobility transistors Ieee Sensors Journal. 10: 64-70. DOI: 10.1109/Jsen.2009.2035213 |
0.423 |
|
| 2010 |
Davies RP, Gila BP, Abernathy CR, Pearton SJ, Stanton CJ. Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN Applied Physics Letters. 96: 212502. DOI: 10.1063/1.3437085 |
0.772 |
|
| 2009 |
Douglas EA, Cheney DP, Chen KHP, Chang CP, Leu LP, Gila BP, Abernathy CR, Pearton SJ. GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-04 |
0.489 |
|
| 2009 |
Cheney D, Gila B, Douglas EA, Ren F, Pearton S. A Comprehensive Approach to HEMT Reliability Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-03 |
0.393 |
|
| 2009 |
Lugo FJ, Kim HS, Pearton SJ, Abernathy CR, Gila BP, Norton DP, Wang YL, Ren F. Rectifying ZnO:Ag∕ZnO:Ga Thin-Film Junctions Electrochemical and Solid-State Letters. 12: H188. DOI: 10.1149/1.3097392 |
0.628 |
|
| 2009 |
Chen KH, Ren F, Pais A, Xie H, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2166-2169. DOI: 10.1116/1.3212931 |
0.483 |
|
| 2009 |
Wright JS, Lim W, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Pd-catalyzed hydrogen sensing with InN nanobelts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L8. DOI: 10.1116/1.3125267 |
0.405 |
|
| 2009 |
Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)] Applied Physics Letters. 95: 139901. DOI: 10.1063/1.3238266 |
0.62 |
|
| 2009 |
Herrero AM, Gila BP, Gerger A, Scheuermann A, Davies R, Abernathy CR, Pearton SJ, Ren F. Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105. DOI: 10.1063/1.3236568 |
0.825 |
|
| 2009 |
Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Applied Physics Letters. 95: 082110. DOI: 10.1063/1.3216576 |
0.702 |
|
| 2009 |
Wright J, Lim W, Gila B, Pearton S, Johnson JL, Ural A, Ren F. Hydrogen sensing with Pt-functionalized GaN nanowires Sensors and Actuators B: Chemical. 140: 196-199. DOI: 10.1016/J.Snb.2009.04.009 |
0.457 |
|
| 2008 |
Pearton SJ, Kang BS, Gila BP, Norton DP, Kryliouk O, Ren F, Heo YW, Chang CY, Chi GC, Wang WM, Chen LC. GaN, ZnO and InN nanowires and devices. Journal of Nanoscience and Nanotechnology. 8: 99-110. PMID 18468056 DOI: 10.1166/Jnn.2008.N01 |
0.472 |
|
| 2008 |
Stewart AD, Scheuermann AG, Gerger AP, Gila BP, Abernathy CR, Pearton SJ. Optimization of Samarium Oxide Deposition on Gallium Arsenide Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A10-03 |
0.751 |
|
| 2008 |
Jang JH, Herrero AM, Son S, Gila B, Abernathy C, Craciun V. Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C03-08 |
0.775 |
|
| 2008 |
Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element Electrochemical and Solid-State Letters. 11: J19. DOI: 10.1149/1.2824500 |
0.584 |
|
| 2008 |
Lim W, Wright JS, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts Applied Physics Letters. 93: 202109. DOI: 10.1063/1.3033548 |
0.453 |
|
| 2008 |
Lim W, Wright JS, Gila BP, Johnson JL, Ural A, Anderson T, Ren F, Pearton SJ. Room temperature hydrogen detection using Pd-coated GaN nanowires Applied Physics Letters. 93. DOI: 10.1063/1.2975173 |
0.478 |
|
| 2008 |
Stewart AD, Gerger A, Gila BP, Abernathy CR, Pearton SJ. Determination of Sm2 O3 GaAs heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 92. DOI: 10.1063/1.2911726 |
0.698 |
|
| 2008 |
Jang JH, Herrero AM, Gila B, Abernathy C, Craciun V. Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2899964 |
0.811 |
|
| 2008 |
Erie J, Li Y, Ivill M, Kim H, Pearton S, Gila B, Norton D, Ren F. Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition Applied Surface Science. 254: 5941-5945. DOI: 10.1016/J.Apsusc.2008.03.161 |
0.503 |
|
| 2008 |
Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 Applied Surface Science. 254: 5211-5215. DOI: 10.1016/J.Apsusc.2008.02.028 |
0.502 |
|
| 2008 |
Voss LF, Stafford L, Gila BP, Pearton SJ, Ren F. Ir-based diffusion barriers for Ohmic contacts to p-GaN Applied Surface Science. 254: 4134-4138. DOI: 10.1016/J.Apsusc.2007.12.046 |
0.526 |
|
| 2008 |
Lim W, Craciun V, Siebein K, Gila B, Norton D, Pearton S, Ren F. Surface and bulk thermal annealing effects on ZnO crystals Applied Surface Science. 254: 2396-2400. DOI: 10.1016/J.Apsusc.2007.09.066 |
0.516 |
|
| 2008 |
Johnson JL, Choi Y, Ural A, Lim W, Wright J, Gila B, Ren F, Pearton S. Growth and Characterization of GaN Nanowires for Hydrogen Sensors Journal of Electronic Materials. 38: 490-494. DOI: 10.1007/S11664-008-0596-Z |
0.524 |
|
| 2008 |
Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644 |
0.806 |
|
| 2008 |
Erie JM, Ivill M, Kim HS, Pearton SJ, Gila B, Ren F, Norton DP. Acceptor state formation in arsenic-doped ZnO films grown using ozone Physica Status Solidi (a). 205: 1647-1652. DOI: 10.1002/Pssa.200723663 |
0.504 |
|
| 2008 |
Jang JH, Herrero AM, Son S, Gila B, Abernathy C, Craciun V. Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition Materials Research Society Symposium Proceedings. 1068: 123-128. |
0.809 |
|
| 2007 |
Khanna R, Gila BP, Stafford L, Pearton SJ, Ren F, Kravchenko II. Ir-Based Schottky and Ohmic Contacts on n-GaN Journal of the Electrochemical Society. 154: H584. DOI: 10.1149/1.2734102 |
0.517 |
|
| 2007 |
Jang S, Kang BS, Ren F, Emanetoglu NW, Shen H, Chang WH, Gila BP, Hlad M, Pearton SJ. Comparison of E-beam and sputter-deposited ITO films for 1.55 μm metal-semiconductor-metal photodetector applications Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2667428 |
0.502 |
|
| 2007 |
Wright JS, Khanna R, Stafford L, Gila BP, Norton DP, Pearton SJ, Ren F, Kravchenko II. Ir∕Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO Journal of the Electrochemical Society. 154: H161. DOI: 10.1149/1.2424414 |
0.528 |
|
| 2007 |
Polyakov AY, Smirnov NB, Gila BP, Hlad M, Gerger AP, Abernathy CR, Pearton SJ. Studies of Interface States in Sc[sub 2]O[sub 3]∕GaN, MgO∕GaN, and MgScO∕GaN structures Journal of the Electrochemical Society. 154: H115. DOI: 10.1149/1.2405865 |
0.809 |
|
| 2007 |
Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region Applied Physics Letters. 91: 012110. DOI: 10.1063/1.2754637 |
0.557 |
|
| 2007 |
Wang H, Anderson TJ, Kang BS, Ren F, Li C, Low Z, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts Applied Physics Letters. 90: 252109. DOI: 10.1063/1.2751107 |
0.478 |
|
| 2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572 |
0.621 |
|
| 2007 |
Wang HT, Anderson TJ, Ren F, Li C, Low ZN, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes Ecs Transactions. 6: 289-295. DOI: 10.1063/1.2408635 |
0.387 |
|
| 2007 |
Tien L, Norton D, Gila B, Pearton S, Wang H, Kang B, Ren F. Detection of hydrogen with SnO2-coated ZnO nanorods Applied Surface Science. 253: 4748-4752. DOI: 10.1016/J.Apsusc.2006.10.056 |
0.519 |
|
| 2007 |
Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090 |
0.527 |
|
| 2007 |
Herrero AM, Gerger A, Gila B, Pearton S, Wang H, Jang S, Anderson T, Chen J, Kang B, Ren F, Shen H, LaRoche JR, Smith KV. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K Applied Surface Science. 253: 3298-3302. DOI: 10.1016/J.Apsusc.2006.07.032 |
0.814 |
|
| 2007 |
Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 Journal of Electronic Materials. 37: 161-166. DOI: 10.1007/S11664-007-0334-Y |
0.497 |
|
| 2007 |
Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y |
0.806 |
|
| 2007 |
Kang B, Wang H, Ren F, Hlad M, Gila B, Abernathy C, Pearton S, Li C, Low Z, Lin J, Johnson J, Rajagopal P, Roberts J, Piner E, Linthicum K. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors Journal of Electronic Materials. 37: 550-553. DOI: 10.1007/S11664-007-0298-Y |
0.785 |
|
| 2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/S11664-007-0277-3 |
0.611 |
|
| 2007 |
Wright J, Stafford L, Gila B, Norton D, Pearton S, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO Journal of Electronic Materials. 36: 488-493. DOI: 10.1007/S11664-006-0039-7 |
0.513 |
|
| 2007 |
Allums K, Hlad M, Gerger A, Gila B, Abernathy C, Pearton S, Ren F, Dwivedi R, Fogarty T, Wilkins R. Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes Journal of Electronic Materials. 36: 519-523. DOI: 10.1007/S11664-006-0035-Y |
0.822 |
|
| 2007 |
Lee GS, Lee C, Choi H, Ahn DJ, Kim J, Gila BP, Abernathy CR, Pearton SJ, Ren F. Polydiacetylene-based selective NH3gas sensor using Sc2O3/GaN structures Physica Status Solidi (a). 204: 3556-3561. DOI: 10.1002/Pssa.200723066 |
0.55 |
|
| 2006 |
Kang B, Wang H, Tien LC, Ren F, Gila B, Norton D, Abernathy C, Lin J, Pearton S. Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors Sensors. 6: 643-666. DOI: 10.3390/S6060643 |
0.616 |
|
| 2006 |
Wright J, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts to Bulk, Single-Crystal n-type ZnO Mrs Proceedings. 957. DOI: 10.1557/PROC-0957-K09-02 |
0.309 |
|
| 2006 |
Anderson T, Ren F, Voss L, Hlad M, Gila BP, Pearton S, Covert L, Lin J, Thuret J, Lahreche H, Bove P. AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I16-02 |
0.813 |
|
| 2006 |
Stodilka D, Gerger AP, Hlad M, Kumar P, Gila BP, Singh R, Abernathy CR, Pearton SJ, Ren F. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B14-03 |
0.792 |
|
| 2006 |
Gila BP, Hlad M, Anderson T, Chen JJ, Allums KK, Gerger A, Herrero A, Jang S, Kang B, Abernathy CR, Ren F, Pearton SJ. Oxide dielectrics for reliable passivation of AlGaN/GaN HEMTS and insulated gates Ecs Transactions. 3: 141-150. DOI: 10.1149/1.2357204 |
0.789 |
|
| 2006 |
Wang H, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K Journal of the Electrochemical Society. 153: G787. DOI: 10.1149/1.2212049 |
0.809 |
|
| 2006 |
Chen JJ, Anderson TJ, Jang S, Ren F, Li YJ, Kim H, Gila BP, Norton DP, Pearton SJ. Ti∕Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 153: G462. DOI: 10.1149/1.2184047 |
0.542 |
|
| 2006 |
Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730 |
0.809 |
|
| 2006 |
Wang H, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Improved Au Schottky contacts on GaAs using cryogenic metal deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1799. DOI: 10.1116/1.2213270 |
0.825 |
|
| 2006 |
Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698 |
0.562 |
|
| 2006 |
Herrero AM, Gila BP, Abernathy CR, Pearton SJ, Craciun V, Siebein K, Ren F. Epitaxial growth of Sc2O3 films on GaN Applied Physics Letters. 89: 092117. DOI: 10.1063/1.2270058 |
0.809 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Erratum: Band offsets in the Sc2O3∕GaN heterojunction system [Appl. Phys. Lett.
88, 142115
(2006)] Applied Physics Letters. 88: 249901. DOI: 10.1063/1.2213199 |
0.77 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Band offsets in the Sc2O3∕GaN heterojunction system Applied Physics Letters. 88: 142115. DOI: 10.1063/1.2194314 |
0.805 |
|
| 2006 |
Chen J, Jang S, Anderson TJ, Ren F, Li Y, Kim H, Gila BP, Norton DP, Pearton SJ. Low specific contact resistance Ti∕Au contacts on ZnO Applied Physics Letters. 88: 122107. DOI: 10.1063/1.2187576 |
0.538 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 88: 042113. DOI: 10.1063/1.2170140 |
0.81 |
|
| 2006 |
Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO Applied Surface Science. 253: 1269-1273. DOI: 10.1016/J.Apsusc.2006.01.081 |
0.422 |
|
| 2006 |
Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries Applied Surface Science. 253: 889-894. DOI: 10.1016/J.Apsusc.2006.01.037 |
0.474 |
|
| 2006 |
Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018 |
0.81 |
|
| 2006 |
Jang S, Ren F, Pearton SJ, Gila BP, Hlad M, Abernathy CR, Yang H, Pan CJ, Chyi J, Bove P, Lahreche H, Thuret J. Si-diffused GaN for enhancement-mode GaN mosfet on si applications Journal of Electronic Materials. 35: 685-690. DOI: 10.1007/S11664-006-0121-1 |
0.807 |
|
| 2006 |
Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2 |
0.819 |
|
| 2006 |
Chen J, Hlad M, Gerger A, Gila B, Ren F, Abernathy C, Pearton S. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Journal of Electronic Materials. 36: 368-372. DOI: 10.1007/S11664-006-0037-9 |
0.815 |
|
| 2005 |
Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394 |
0.807 |
|
| 2005 |
Voss L, Gila BP, Pearton SJ, Wang H, Ren F. Characterization of bulk GaN rectifiers for hydrogen gas sensing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2373. DOI: 10.1116/1.2110343 |
0.492 |
|
| 2005 |
Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing Ieee Sensors Journal. 5: 677-680. DOI: 10.1109/Jsen.2005.848136 |
0.528 |
|
| 2005 |
Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617 |
0.597 |
|
| 2005 |
Gila BP, Hlad M, Onstine AH, Frazier R, Thaler GT, Herrero A, Lambers E, Abernathy CR, Pearton SJ, Anderson T, Jang S, Ren F, Moser N, Fitch RC, Freund M. Improved oxide passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2105987 |
0.78 |
|
| 2005 |
Kang BS, Kim J, Jang S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952568 |
0.566 |
|
| 2005 |
Frazier RM, Thaler GT, Leifer JY, Hite JK, Gila BP, Abernathy CR, Pearton SJ. Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy Applied Physics Letters. 86: 052101. DOI: 10.1063/1.1857074 |
0.803 |
|
| 2005 |
Kang B, Kim S, Ren F, Gila B, Abernathy C, Pearton S. Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection Sensors and Actuators B: Chemical. 104: 232-236. DOI: 10.1016/J.Snb.2004.05.018 |
0.625 |
|
| 2005 |
Chu S, Ren F, Pearton S, Kang B, Kim S, Gila B, Abernathy C, Chyi J, Johnson W, Lin J. Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors Materials Science and Engineering: A. 409: 340-347. DOI: 10.1016/J.Msea.2005.05.119 |
0.573 |
|
| 2005 |
LaRoche JR, Heo YW, Kang BS, Tien LC, Kwon Y, Norton DP, Gila BP, Ren F, Pearton SJ. Fabrication approaches to ZnO nanowire devices Journal of Electronic Materials. 34: 404-408. DOI: 10.1007/S11664-005-0119-0 |
0.526 |
|
| 2005 |
Frazier RM, Thaler GT, Gila BP, Stapleton J, Overberg ME, Abernathy CR, Pearton SJ, Ren F, Zavada JM. AIN-based dilute magnetic semiconductors Journal of Electronic Materials. 34: 365-369. DOI: 10.1007/S11664-005-0112-7 |
0.791 |
|
| 2005 |
Kang B, Heo Y, Tien L, Norton D, Ren F, Gila B, Pearton S. Hydrogen and ozone gas sensing using multiple ZnO nanorods Applied Physics A. 80: 1029-1032. DOI: 10.1007/S00339-004-3098-8 |
0.508 |
|
| 2005 |
Kang B, Kim S, Ren F, Ip K, Heo Y, Gila B, Abernathy C, Norton D, Pearton S. Detection of CO using bulk ZnO Schottky rectifiers Applied Physics A. 80: 259-261. DOI: 10.1007/S00339-004-2666-2 |
0.586 |
|
| 2005 |
Irokawa Y, Nakano Y, Ishiko M, Kachi T, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. GaN enhancement mode metal-oxide semiconductor field effect transistors Physica Status Solidi (C). 2: 2668-2671. DOI: 10.1002/Pssc.200461280 |
0.507 |
|
| 2005 |
Kang BS, Kim S, Kim J, Mehandru R, Ren F, Baik K, Pearton SJ, Gila BP, Abernathy CR, Pan CC, Chen GT, Chyi JI, Chandrasekaran V, Sheplak M, Nishida T, et al. AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing Physica Status Solidi C: Conferences. 2: 2684-2687. DOI: 10.1002/Pssc.200461269 |
0.481 |
|
| 2005 |
Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Baik KH, Gila BP, Abernathy CR, et al. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors Physica Status Solidi C: Conferences. 2: 2672-2675. DOI: 10.1002/Pssc.200461268 |
0.637 |
|
| 2004 |
Stodilka DO, Gila BP, Abernathy CR, Lambers E, Ren F, Pearton SJ. Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination Materials Science Forum. 1377-1380. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1377 |
0.426 |
|
| 2004 |
Heo Y, Kang BS, Tien LC, Kwon Y, La Roche JR, Gila BP, Ren F, Pearton SJ, Norton DP. Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire Mrs Proceedings. 829. DOI: 10.1557/Proc-829-B8.1 |
0.535 |
|
| 2004 |
Ip K, Gila B, Onstine A, Lambers E, Heo Y, Norton D, Pearton S, LaRoche J, Ren F. Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO. Mrs Proceedings. 829. DOI: 10.1557/Proc-829-B10.1 |
0.786 |
|
| 2004 |
Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ. Dramatic Improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Journal of the Electrochemical Society. 151: G915-G918. DOI: 10.1149/1.1803561 |
0.629 |
|
| 2004 |
Irokawa Y, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J, Park SS, Park YJ. Reduction of Surface-Induced Current Collapse in AlGaN/GaN HFETs on Freestanding GaN Substrates Electrochemical and Solid-State Letters. 7: G188. DOI: 10.1149/1.1778933 |
0.559 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Danilin VN, Zhukova TA, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Effects of Sc[sub 2]O[sub 3] Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors Journal of the Electrochemical Society. 151: G497. DOI: 10.1149/1.1770954 |
0.536 |
|
| 2004 |
Kang BS, Kim S, Ren F, Ip K, Heo YW, Gila B, Abernathy CR, Norton DP, Pearton SJ. Detection of C[sub 2]H[sub 4] Using Wide-Bandgap Semiconductor Sensors Journal of the Electrochemical Society. 151: G468. DOI: 10.1149/1.1758817 |
0.631 |
|
| 2004 |
Pearton SJ, Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Lin J, Chu SNG. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing Journal of Physics: Condensed Matter. 16: R961-R994. DOI: 10.1088/0953-8984/16/29/R02 |
0.598 |
|
| 2004 |
Kang BS, Kim S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes Applied Physics Letters. 85: 2962-2964. DOI: 10.1063/1.1800282 |
0.493 |
|
| 2004 |
Heo YW, Tien LC, Norton DP, Kang BS, Ren F, Gila BP, Pearton SJ. Electrical transport properties of single ZnO nanorods Applied Physics Letters. 85: 2002-2004. DOI: 10.1063/1.1792373 |
0.517 |
|
| 2004 |
Ip K, Gila BP, Onstine AH, Lambers ES, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F. Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning Applied Physics Letters. 84: 5133-5135. DOI: 10.1063/1.1764940 |
0.533 |
|
| 2004 |
Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Hydrogen-induced reversible changes in drain current in Sc 2O 3/AlGaN/GaN high electron mobility transistors Applied Physics Letters. 84: 4635-4637. DOI: 10.1063/1.1759372 |
0.626 |
|
| 2004 |
Irokawa Y, Nakano Y, Ishiko M, Kachi T, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Applied Physics Letters. 84: 2919-2921. DOI: 10.1063/1.1704876 |
0.508 |
|
| 2004 |
Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of nucleation layer on the magnetic properties of GaMnN Applied Physics Letters. 84: 2578-2580. DOI: 10.1063/1.1695207 |
0.813 |
|
| 2004 |
Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN Applied Physics Letters. 84: 1314-1316. DOI: 10.1063/1.1649819 |
0.797 |
|
| 2004 |
Kang BS, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor Applied Physics Letters. 84: 1123-1125. DOI: 10.1063/1.1648134 |
0.542 |
|
| 2004 |
Luo B, Mehandru R, Kang B, Kim J, Ren F, Gila B, Onstine A, Abernathy C, Pearton S, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, et al. Small signal measurement of Sc2O3 AlGaN/GaN moshemts Solid-State Electronics. 48: 355-358. DOI: 10.1016/S0038-1101(03)00322-8 |
0.594 |
|
| 2004 |
LaRoche J, Luo B, Ren F, Baik K, Stodilka D, Gila B, Abernathy C, Pearton S, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen G, et al. GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates Solid-State Electronics. 48: 193-196. DOI: 10.1016/S0038-1101(03)00290-9 |
0.563 |
|
| 2004 |
Pearton S, Abernathy C, Gila B, Ren F, Zavada J, Park Y. Enhanced functionality in GaN and SiC devices by using novel processing Solid-State Electronics. 48: 1965-1974. DOI: 10.1016/J.Sse.2004.05.061 |
0.641 |
|
| 2004 |
Irokawa Y, Kim J, Ren F, Baik K, Gila B, Abernathy C, Pearton S, Pan C, Chen G, Chyi J, Park S. Si+ ion implanted MPS bulk GaN diodes Solid-State Electronics. 48: 827-830. DOI: 10.1016/J.Sse.2003.09.018 |
0.517 |
|
| 2004 |
Gila BP, Ren F, Abernathy CR. Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices Materials Science and Engineering R: Reports. 44: 151-184. DOI: 10.1016/J.Mser.2004.06.001 |
0.652 |
|
| 2004 |
Ip K, Gila B, Onstine A, Lambers E, Heo Y, Baik K, Norton D, Pearton S, Kim S, LaRoche J, Ren F. Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO Applied Surface Science. 236: 387-393. DOI: 10.1016/J.Apsusc.2004.05.013 |
0.538 |
|
| 2004 |
Irokawa Y, Kim J, Ren F, Baik KH, Gila BP, Abernathy CR, Pearton SJ, Pan C-, Chen G-, Chyi J-. Lateral schottky GaN rectifiers formed by Si+ ion implantation Journal of Electronic Materials. 33: 426-430. DOI: 10.1007/S11664-004-0196-5 |
0.507 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Buyanova IA, Rudko GY, Chen WM, Pan C-, Chen G-, et al. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Journal of Electronic Materials. 33: 241-247. DOI: 10.1007/S11664-004-0186-7 |
0.81 |
|
| 2003 |
Onstine AH, Herrero A, Gila BP, Kim J, Mehandru R, Abernathy CR, Ren F, Pearton SJ. Growth of Scandium Magnesium Oxide on GaN Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E8.6 |
0.821 |
|
| 2003 |
Gila B, Luo B, Kim J, Mehandru R, LaRoche J, Onstine A, Lambers E, Siebein K, Abernathy C, Ren F, Pearton S. The Oxide/Nitride Interface: a study for gate dielectrics and field passivation Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E8.5 |
0.657 |
|
| 2003 |
Ren F, Luo B, Kim J, Mehandru R, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch R, Gillespie J, Jenkins T, Sewell J, Via D, Crespo A, Irokawa Y. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Mrs Proceedings. 764. DOI: 10.1557/PROC-764-C4.1 |
0.526 |
|
| 2003 |
Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F. Simulated High-Temperature Characteristics of Sc[sub 2]O[sub 3]/GaN MOSFETs Electrochemical and Solid-State Letters. 6: G149. DOI: 10.1149/1.1623373 |
0.624 |
|
| 2003 |
Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F. Effects of Oxide Thickness and Gate Length on DC Performance of Submicrometer MgO/GaN MOSFETs Electrochemical and Solid-State Letters. 6: G119. DOI: 10.1149/1.1603971 |
0.615 |
|
| 2003 |
Ip K, Nigam S, Baik KH, Ren F, Chung GY, Gila BP, Pearton SJ. Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing Journal of the Electrochemical Society. 150: G293. DOI: 10.1149/1.1560953 |
0.529 |
|
| 2003 |
Luo B, Kim J, Ren F, Baca AG, Briggs RD, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R. Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1540791 |
0.547 |
|
| 2003 |
Gila BP, Onstine AH, Kim J, Allums KK, Ren F, Abernathy CR, Pearton SJ. Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2368. DOI: 10.1116/1.1620516 |
0.658 |
|
| 2003 |
Ren F, Kim J, Gila BP, Abernathy CR, Pearton SJ, Baca AG, Briggs RD, Chung GY. High temperature GaN based Schottky diode gas sensors Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 61-62. DOI: 10.1109/ISCS.2003.1239906 |
0.461 |
|
| 2003 |
Irokawa Y, Kim J, Ren F, Baik KH, Gila BP, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes Applied Physics Letters. 83: 4987-4989. DOI: 10.1063/1.1634382 |
0.555 |
|
| 2003 |
Kang BS, Kim S, Kim J, Ren F, Baik K, Pearton SJ, Gila BP, Abernathy CR, Pan CC, Chen GT, Chyi JI, Chandrasekaran V, Sheplak M, Nishida T, Chu SNG. Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 4845-4847. DOI: 10.1063/1.1631054 |
0.44 |
|
| 2003 |
Moser NA, Gillespie JK, Via GD, Crespo A, Yannuzzi MJ, Jessen GH, Fitch RC, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 4178-4180. DOI: 10.1063/1.1628394 |
0.549 |
|
| 2003 |
Polyakov AY, Smirnov NB, Govorkov AV, Danilin VN, Zhukova TA, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 83: 2608-2610. DOI: 10.1063/1.1614839 |
0.669 |
|
| 2003 |
Frazier R, Thaler G, Overberg M, Gila B, Abernathy CR, Pearton SJ. Indication of hysteresis in AlMnN Applied Physics Letters. 83: 1758-1760. DOI: 10.1063/1.1604465 |
0.797 |
|
| 2003 |
Mehandru R, Luo B, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, Sewell J, et al. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters. 82: 2530-2532. DOI: 10.1063/1.1567051 |
0.661 |
|
| 2003 |
Luo B, Kim J, Ren F, Gillespie JK, Fitch RC, Sewell J, Dettmer R, Via GD, Crespo A, Jenkins TJ, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, et al. Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 82: 1428-1430. DOI: 10.1063/1.1559631 |
0.6 |
|
| 2003 |
Kim J, Ren F, Gila BP, Abernathy CR, Pearton SJ. Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes Applied Physics Letters. 82: 739-741. DOI: 10.1063/1.1541944 |
0.58 |
|
| 2003 |
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jenkins T, et al. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors Electronics Letters. 39: 809-810. DOI: 10.1049/El:20030525 |
0.587 |
|
| 2003 |
Gila B, Kim J, Luo B, Onstine A, Johnson W, Ren F, Abernathy C, Pearton S. Advantages and limitations of MgO as a dielectric for GaN Solid-State Electronics. 47: 2139-2142. DOI: 10.1016/S0038-1101(03)00186-2 |
0.634 |
|
| 2003 |
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, et al. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Solid-State Electronics. 47: 1781-1786. DOI: 10.1016/S0038-1101(03)00138-2 |
0.619 |
|
| 2003 |
Cho H, Lee K, Gila B, Abernathy C, Pearton S, Ren F. Influence of gate oxide thickness on Sc2O3/GaN MOSFETs Solid-State Electronics. 47: 1757-1761. DOI: 10.1016/S0038-1101(03)00128-X |
0.621 |
|
| 2003 |
Cho H, Lee K, Gila B, Abernathy C, Pearton S, Ren F. Gate breakdown characteristics of MgO/GaN MOSFETs Solid-State Electronics. 47: 1597-1600. DOI: 10.1016/S0038-1101(03)00090-X |
0.627 |
|
| 2003 |
Cho H, Lee K, Gila B, Abernathy C, Pearton S, Ren F. Temperature dependence of MgO/GaN MOSFET performance Solid-State Electronics. 47: 1601-1604. DOI: 10.1016/S0038-1101(03)00089-3 |
0.603 |
|
| 2003 |
Kim J, Gila B, Abernathy C, Chung G, Ren F, Pearton S. Comparison of Pt/GaN and Pt/4H-SiC gas sensors Solid-State Electronics. 47: 1487-1490. DOI: 10.1016/S0038-1101(02)00495-1 |
0.593 |
|
| 2003 |
Kim J, Gila B, Chung G, Abernathy C, Pearton S, Ren F. Hydrogen-sensitive GaN Schottky diodes Solid-State Electronics. 47: 1069-1073. DOI: 10.1016/S0038-1101(02)00485-9 |
0.595 |
|
| 2003 |
Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, et al. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors Solid-State Electronics. 47: 1015-1020. DOI: 10.1016/S0038-1101(02)00468-9 |
0.62 |
|
| 2002 |
Onstine AH, Gila BP, Kim J, Stodilka D, Allums K, Abernathy CR, Ren F, Pearton SJ. Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L3.60 |
0.609 |
|
| 2002 |
Gila BP, Lambers E, Luo B, Onstine AH, Allums KK, Abernathy CR, Ren F, Pearton SJ. Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L11.40 |
0.615 |
|
| 2002 |
Kim J, Gila B, Mehandru R, Johnson JW, Shin JH, Lee KP, Luo B, Onstine A, Abernathy CR, Pearton SJ, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Journal of the Electrochemical Society. 149: G482. DOI: 10.1557/Proc-693-I11.30.1 |
0.575 |
|
| 2002 |
Overberg ME, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, Arnason SB, Hebard AF, Park YD. Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP Materials Research Society Symposium - Proceedings. 690: 9-14. DOI: 10.1557/Proc-690-F1.5 |
0.81 |
|
| 2002 |
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch R, Gillespie J, Jenkins T, Sewell J, Via D, Crespo A, Irokawa Y. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors Journal of the Electrochemical Society. 149: G613. DOI: 10.1149/1.1512675 |
0.632 |
|
| 2002 |
Kim J, Gila BP, Mehandru R, Luo B, Onstine AH, Abernathy CR, Ren F, Allums KK, Dwivedi R, Forgarty TN, Wilkins R, Irokawa Y, Pearton SJ. High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes Electrochemical and Solid-State Letters. 5: G57. DOI: 10.1149/1.1481796 |
0.618 |
|
| 2002 |
Mehandru R, Gila BP, Kim J, Johnson JW, Lee KP, Luo B, Onstine AH, Abernathy CR, Pearton SJ, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide Electrochemical and Solid-State Letters. 5: G51. DOI: 10.1149/1.1479298 |
0.656 |
|
| 2002 |
Harris KK, Gila BP, Deroaches J, Lee KN, MacKenzie JD, Abernathy CR, Ren F, Pearton SJ. Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon Journal of the Electrochemical Society. 149: G128. DOI: 10.1149/1.1431966 |
0.643 |
|
| 2002 |
Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD. Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 969-973. DOI: 10.1116/1.1477424 |
0.786 |
|
| 2002 |
Gillespie JK, Fitch RC, Sewell J, Dettmer R, Via GD, Crespo A, Jenkins TJ, Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 505-507. DOI: 10.1109/Led.2002.802592 |
0.505 |
|
| 2002 |
Kim J, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Irokawa Y. Inversion behavior in Sc2O3/GaN gated diodes Applied Physics Letters. 81: 373-375. DOI: 10.1063/1.1492852 |
0.611 |
|
| 2002 |
Kim J, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Irokawa Y. Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes Applied Physics Letters. 80: 4555-4557. DOI: 10.1063/1.1487903 |
0.612 |
|
| 2002 |
Thaler GT, Overberg ME, Gila B, Frazier R, Abernathy CR, Pearton SJ, Lee JS, Lee SY, Park YD, Khim ZG, Kim J, Ren F. Magnetic properties of n-GaMnN thin films Applied Physics Letters. 80: 3964-3966. DOI: 10.1063/1.1481533 |
0.8 |
|
| 2002 |
Luo B, Johnson JW, Kim J, Mehandru RM, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Baca AG, Briggs RD, Shul RJ, Monier C, Han J. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 80: 1661-1663. DOI: 10.1063/1.1455692 |
0.644 |
|
| 2002 |
Kim J, Mehandru R, Luo B, Ren F, Gila B, Onstine A, Abernathy C, Pearton S, Irokawa Y. Charge pumping in Sc2O3∕GaN gated mos diodes Electronics Letters. 38: 920. DOI: 10.1049/El:20020639 |
0.541 |
|
| 2002 |
Pearton S, Abernathy C, Overberg M, Thaler G, Onstine A, Gila B, Ren F, Lou B, Kim J. New applications advisable for gallium nitride Materials Today. 5: 24-31. DOI: 10.1016/S1369-7021(02)00636-3 |
0.772 |
|
| 2002 |
Luo B, Mehandru RM, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch RC, Gillespie J, Dellmer R, Jenkins T, Sewell J, Via D, Crespo A. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Solid-State Electronics. 46: 2185-2190. DOI: 10.1016/S0038-1101(02)00229-0 |
0.627 |
|
| 2002 |
Luo B, Johnson J, Gila B, Onstine A, Abernathy C, Ren F, Pearton S, Baca A, Dabiran A, Wowchack A, Chow P. Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 Solid-State Electronics. 46: 467-476. DOI: 10.1016/S0038-1101(01)00314-8 |
0.632 |
|
| 2001 |
Allums K, Luo B, Mehandru R, Gila BP, Dwivedi R, Fogarty T, Wilkins R, Abernathy CR, Ren F, Pearton SJ. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.31.1 |
0.64 |
|
| 2001 |
Kim J, Gila BP, Mehandru R, Johnson J, Shin JH, Lee K, Luo B, Onstine A, Abernathy CR, Pearton S, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Mrs Proceedings. 693. DOI: 10.1557/PROC-693-I11.30.1 |
0.551 |
|
| 2001 |
Gila B, Johnson J, Lee KN, Krishnamoorthy V, Bates S, Abernathy CR, Ren F, Pearton SJ. Gadolinium Oxide Gate Dielectrics for GaN MOSFETs Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E7.4 |
0.65 |
|
| 2001 |
Johnson JW, Gila BP, Luo B, Lee KP, Abernathy CR, Pearton SJ, Chyi JI, Nee TE, Lee CM, Chuo CC, Ren F. SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors Journal of the Electrochemical Society. 148: G303. DOI: 10.1149/1.1368110 |
0.481 |
|
| 2001 |
Overberg ME, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF. Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy Applied Physics Letters. 79: 3128-3130. DOI: 10.1063/1.1416472 |
0.698 |
|
| 2001 |
Pearton SJ, Ren F, Zhang AP, Dang G, Cao XA, Lee KP, Cho H, Gila BP, Johnson JW, Monier C, Abernathy CR, Han J, Baca AG, Chyi J-, Lee C-, et al. GaN electronics for high power, high temperature applications Materials Science and Engineering B-Advanced Functional Solid-State Materials. 82: 227-231. DOI: 10.1016/S0921-5107(00)00767-4 |
0.547 |
|
| 2001 |
Park P, Norasetthekul S, Lee K, Baik K, Gila B, Shin J, Abernathy C, Ren F, Lambers E, Pearton S. Wet and dry etching of Sc2O3 Applied Surface Science. 185: 52-59. DOI: 10.1016/S0169-4332(01)00593-1 |
0.576 |
|
| 2001 |
Baik K, Park P, Gila B, Shin J, Abernathy C, Norasetthekul S, Luo B, Ren F, Lambers E, Pearton S. Comparison of plasma etch chemistries for MgO Applied Surface Science. 183: 26-32. DOI: 10.1016/S0169-4332(01)00542-6 |
0.576 |
|
| 2001 |
Johnson J, LaRoch J, Ren F, Gila B, Overberg M, Abernathy C, Chyi J, Chuo C, Nee T, Lee C, Lee K, Park S, Park Y, Pearton S. Schottky rectifiers fabricated on free-standing GaN substrates Solid-State Electronics. 45: 405-410. DOI: 10.1016/S0038-1101(01)00059-4 |
0.757 |
|
| 2001 |
Gila B, Johnson J, Mehandru R, Luo B, Onstine A, Krishnamoorthy V, Bates S, Abernathy C, Ren F, Pearton S. Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs Physica Status Solidi (a). 188: 239-242. DOI: 10.1002/1521-396X(200111)188:1<239::Aid-Pssa239>3.0.Co;2-D |
0.645 |
|
| 2000 |
Pearton S, Cao X, Cho H, Lee K, Monier C, Ren F, Dang G, Zhang A, Johnson W, LaRoche J, Gila B, Abernathy C, Shul R, Baca A, Han J, et al. Device Processing for GaN High Power Electronics Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T7.1.1 |
0.595 |
|
| 2000 |
Lee KN, Donovan SM, Gila B, Overberg M, Mackenzie JD, Abernathy CR, Wilson RG. Surface chemical treatment for the cleaning of AlN and GaN surfaces Journal of the Electrochemical Society. 147: 3087-3090. DOI: 10.1149/1.1393860 |
0.703 |
|
| 2000 |
Johnson JW, Luo B, Ren F, Gila BP, Krishnamoorthy W, Abernathy CR, Pearton SJ, Chyi JI, Nee TE, Lee CM, Chuo CC. Gd2O3/GaN metal-oxide-semiconductor field-effect transistor Applied Physics Letters. 77: 3230-3232. DOI: 10.1063/1.1326041 |
0.579 |
|
| 2000 |
Hays DC, Lee KP, Gila BP, Ren F, Abernathy CR, Pearton SJ. Dry etch selectivity of Gd2O3 to GaN and AlN Journal of Electronic Materials. 29: 285-290. DOI: 10.1007/S11664-000-0064-X |
0.583 |
|
| 1999 |
Gila B, Lee KN, Laroche J, Ren F, Donovan SM, Abernathy CR, Han J. MBE Growth of Oxides for III–N MOSFETs Mrs Proceedings. 573. DOI: 10.1557/Proc-573-247 |
0.658 |
|
| 1998 |
Donovan SM, Gila B, MacKenzie JD, Lee KN, Abernathy CR, Wilson RG, Muhr GT. The Role of the In Source IN InN Growth from Molecular Beams Mrs Proceedings. 512. DOI: 10.1557/Proc-512-525 |
0.488 |
|
| 1998 |
Herner SB, Gossmann HJ, Tung RT, Gila BP. Ultrashallow junctions in silicon using single-crystal CoSi2 as a dopant source Electrochemical and Solid-State Letters. 1: 150-152. DOI: 10.1149/1.1390667 |
0.327 |
|
| 1998 |
Ren F, Abernathy C, MacKenzie J, Gila B, Pearton S, Hong M, Marcus M, Schurman M, Baca A, Shul R. Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics Solid-State Electronics. 42: 2177-2181. DOI: 10.1016/S0038-1101(98)00213-5 |
0.644 |
|
| Show low-probability matches. |