| Year |
Citation |
Score |
| 2020 |
Athreya N, Leburton J. Electronic Detection of Nucleotides in Multi-Layered MoS2-hBN Nanopore FET Devices Biophysical Journal. 118. DOI: 10.1016/J.Bpj.2019.11.974 |
0.313 |
|
| 2019 |
Wang J, Leburton JP, Herzinger CM, DeTemple TA, Coleman JJ. Quantum unconfined Stark effect in a GaAs single quantum well: An optical-constant model. Physical Review. B, Condensed Matter. 47: 4783-4785. PMID 10006630 DOI: 10.1103/Physrevb.47.4783 |
0.493 |
|
| 2019 |
Wang J, Leburton JP. Plasmon dispersion relation of a quasi-one-dimensional electron gas. Physical Review. B, Condensed Matter. 41: 7846-7849. PMID 9993083 DOI: 10.1103/Physrevb.41.7846 |
0.439 |
|
| 2018 |
Athreya NBM, Sarathy A, Leburton JP. LARGE SCALE PARALLEL DNA DETECTION BY 2D SOLID-STATE MULTI-PORE SYSTEMS. Acs Sensors. PMID 29663800 DOI: 10.1021/Acssensors.8B00192 |
0.309 |
|
| 2018 |
Lin Z, Wang Z, Yuan G, Leburton J. Numerov Schrödinger solver with complex potential boundaries for open multilayer heterojunction systems Journal of the Optical Society of America B. 35: 1578. DOI: 10.1364/Josab.35.001578 |
0.373 |
|
| 2018 |
Chen W, Leburton J, Yin W, Li E. Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction Ieee Transactions On Electron Devices. 65: 4542-4547. DOI: 10.1109/Ted.2018.2866505 |
0.336 |
|
| 2018 |
Li Y, Leburton J. Quantum well capture and base carrier lifetime in light emitting transistor Applied Physics Letters. 113: 171110. DOI: 10.1063/1.5044758 |
0.324 |
|
| 2016 |
Sarathy A, Leburton J. Electronic conductance model in constricted MoS2 with nanopores Applied Physics Letters. 108: 053701. DOI: 10.1063/1.4941237 |
0.367 |
|
| 2016 |
Qiu H, Sarathy A, Leburton J, Schulten K. Stepwise Transport of Stretched ssDNA Through Graphene Nanopores Biophysical Journal. 110: 508a. DOI: 10.1016/J.Bpj.2015.11.2716 |
0.329 |
|
| 2015 |
Girdhar A, Sathe C, Schulten K, Leburton JP. Tunable graphene quantum point contact transistor for DNA detection and characterization. Nanotechnology. 26: 134005. PMID 25765702 DOI: 10.1088/0957-4484/26/13/134005 |
0.341 |
|
| 2015 |
Leburton J. Genomics with graphene nanotechnology (Presentation Recording) Proceedings of Spie. 9552: 955208. DOI: 10.1117/12.2186646 |
0.33 |
|
| 2014 |
Girdhar A, Sathe C, Schulten K, Leburton JP. Gate-Modulated Graphene Quantum Point Contact Device for DNA Sensing. Journal of Computational Electronics. 13: 839-846. PMID 25386110 DOI: 10.1007/S10825-014-0596-6 |
0.377 |
|
| 2014 |
Zeng H, Zhao J, Leburton J, Wei J. Vacancy-Induced Intramolecular Junctions and Quantum Transport in Metallic Carbon Nanotubes Journal of Physical Chemistry C. 118: 22984-22990. DOI: 10.1021/Jp508159X |
0.371 |
|
| 2014 |
Moon P, Yoon E, Choi WJ, Lee JD, Leburton J. Strained Quantum Rings Nanoscience and Technology. 87: 331-352. DOI: 10.1007/978-3-642-39197-2_13 |
0.409 |
|
| 2013 |
Girdhar A, Sathe C, Schulten K, Leburton JP. Graphene quantum point contact transistor for DNA sensing. Proceedings of the National Academy of Sciences of the United States of America. 110: 16748-53. PMID 24082108 DOI: 10.4172/2155-6210.S1.015 |
0.391 |
|
| 2013 |
Taghavi I, Kaatuzian H, Leburton J. Performance Optimization of Multiple Quantum Well Transistor Laser Ieee Journal of Quantum Electronics. 49: 426-435. DOI: 10.1109/Jqe.2013.2250488 |
0.415 |
|
| 2012 |
Melnikov DV, Nikolaev A, Leburton JP, Gracheva ME. Polymer translocation through an electrically tunable nanopore in a multilayered semiconductor membrane. Methods in Molecular Biology (Clifton, N.J.). 870: 187-207. PMID 22528265 DOI: 10.1007/978-1-61779-773-6_11 |
0.303 |
|
| 2012 |
Taghavi I, Kaatuzian H, Leburton J. Bandwidth enhancement and optical performances of multiple quantum well transistor lasers Applied Physics Letters. 100: 231114. DOI: 10.1063/1.4727898 |
0.443 |
|
| 2012 |
Zeng H, Zhao J, Wei J, Xu D, Leburton J. Modulation of electric behavior by position-dependent substitutional impurity in zigzag-edged graphene nanoribbon Computational Materials Science. 60: 234-238. DOI: 10.1016/J.Commatsci.2012.03.040 |
0.363 |
|
| 2012 |
Zeng H, Zhao J, Wei J, Xu D, Leburton J. Controllable tuning of the electronic transport in pre-designed graphene nanoribbon Current Applied Physics. 12: 1611-1614. DOI: 10.1016/J.Cap.2012.05.031 |
0.344 |
|
| 2011 |
Scott BW, Leburton JP. Modeling of the output and transfer characteristics of graphene field-effect transistors Ieee Transactions On Nanotechnology. 10: 1113-1119. DOI: 10.1109/Tnano.2011.2112375 |
0.311 |
|
| 2011 |
de Sousa JS, Peibst R, Erenburg M, Bugiel E, Farias GA, Leburton J, Hofmann KR. Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memories Ieee Transactions On Electron Devices. 58: 376-383. DOI: 10.1109/Ted.2010.2091959 |
0.42 |
|
| 2011 |
Sekwao S, Leburton J. Hot-electron transient and terahertz oscillations in graphene Physical Review B. 83. DOI: 10.1103/Physrevb.83.075418 |
0.32 |
|
| 2011 |
Girdhar A, Leburton JP. Erratum: “Soft carrier multiplication by hot electrons in graphene” [Appl. Phys. Lett. 99, 043107 (2011)] Applied Physics Letters. 99: 229903. DOI: 10.1063/1.3664400 |
0.377 |
|
| 2011 |
Zeng H, Zhao J, Hu H, Leburton J. Atomic vacancy defects in the electronic properties of semi-metallic carbon nanotubes Journal of Applied Physics. 109: 083716. DOI: 10.1063/1.3573782 |
0.31 |
|
| 2010 |
Zeng H, Hu H, Leburton JP. Chirality effects in atomic vacancy-limited transport in metallic carbon nanotubes. Acs Nano. 4: 292-6. PMID 20000404 DOI: 10.1021/Nn901192G |
0.302 |
|
| 2009 |
Zhang LX, Melnikov DV, Leburton JP. Non-monotonic variation of the exchange energy in double elliptic quantum dots. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 095502. PMID 21817399 DOI: 10.1088/0953-8984/21/9/095502 |
0.65 |
|
| 2009 |
Kuroda MA, Leburton J. High-field electrothermal transport in metallic carbon nanotubes Physical Review B. 80: 165417. DOI: 10.1103/Physrevb.80.165417 |
0.31 |
|
| 2009 |
Kim J, Melnikov DV, Leburton J. Tunable many-body effects in triple quantum dots Physical Review B. 80. DOI: 10.1103/Physrevb.80.045305 |
0.635 |
|
| 2009 |
Moon P, Yoon E, Sheng W, Leburton J. Anisotropic enhancement of piezoelectricity in the optical properties of laterally coupled InAs/GaAs self-assembled quantum dots Physical Review B. 79. DOI: 10.1103/PHYSREVB.79.125325 |
0.333 |
|
| 2008 |
Kuroda MA, Leburton JP. Restricted Wiedemann-Franz law and vanishing thermoelectric power in one-dimensional conductors. Physical Review Letters. 101: 256805. PMID 19113740 DOI: 10.1103/Physrevlett.101.256805 |
0.379 |
|
| 2008 |
Kim J, Melnikov DV, Leburton J. Coupled Quantum Dots as Two-Level Systems: A Variational Monte Carlo Approach The Open Condensed Matter Physics Journal. 1: 1-6. DOI: 10.2174/1874186X00801010001 |
0.628 |
|
| 2008 |
Zhang LX, Melnikov DV, Agarwal S, Leburton J. Size effects in the exchange coupling between two electrons confined in quantum wire quantum dots Physical Review B. 78: 35418. DOI: 10.1103/Physrevb.78.035418 |
0.515 |
|
| 2008 |
Melnikov DV, Fujisawa T, Austing DG, Tarucha S, Leburton J. Many-body excitations in the tunneling current spectra of a few-electron quantum dot Physical Review B. 77. DOI: 10.1103/Physrevb.77.165340 |
0.518 |
|
| 2007 |
de Sousa JS, Freire VN, Leburton J. Hole-versus electron-based operations in SiGe nanocrystal nonvolatile memories Applied Physics Letters. 90: 223504. DOI: 10.1063/1.2741598 |
0.309 |
|
| 2007 |
Melnikov DV, Leburton J. Single-particle state mixing and Coulomb localization in two-electron realistic coupled quantum dots Physica Status Solidi (C). 4: 578-581. DOI: 10.1002/Pssc.200673206 |
0.514 |
|
| 2006 |
Melnikov DV, Leburton J, Taha A, Sobh N. Coulomb localization and exchange modulation in two-electron coupled quantum dots Physical Review B. 74. DOI: 10.1103/Physrevb.74.041309 |
0.524 |
|
| 2006 |
Kim J, Melnikov DV, Leburton JP, Austing DG, Tarucha S. Spin charging sequences in three colinear laterally coupled vertical quantum dots Physical Review B. 74. DOI: 10.1103/Physrevb.74.035307 |
0.644 |
|
| 2006 |
Melnikov DV, Leburton J. Single-particle state mixing in two-electron double quantum dots Physical Review B. 73. DOI: 10.1103/Physrevb.73.155301 |
0.457 |
|
| 2006 |
Melnikov DV, Leburton J. Dimensionality effects in the two-electron system in circular and elliptic quantum dots Physical Review B. 73. DOI: 10.1103/Physrevb.73.085320 |
0.507 |
|
| 2006 |
Gracheva ME, Xiong A, Aksimentiev A, Schulten K, Timp G, Leburton JP. Simulation of the electric response of DNA translocation through a semiconductor nanopore-capacitor Nanotechnology. 17: 622-633. DOI: 10.1088/0957-4484/17/3/002 |
0.303 |
|
| 2006 |
Tehranchi F, Leburton J, Thean A. A double gate metal-oxide-semiconductor structure for modulation of the hyperfine interaction in phosphorous-doped Si device Journal of Applied Physics. 100: 126106. DOI: 10.1063/1.2405132 |
0.37 |
|
| 2006 |
Austing D, Yu G, Melnikov D, Leburton J, Tarucha S. Few-electron spin and charge configurations in circular and rectangular vertical quantum dot mesas in a magnetic field: Experiment and full three-dimensional self-consistent simulations Physica E: Low-Dimensional Systems and Nanostructures. 32: 395-398. DOI: 10.1016/J.Physe.2005.12.078 |
0.461 |
|
| 2006 |
MELNIKOV D, ZHANG L, LEBURTON J. Exchange coupling between two electrons in double quantum dot structures Current Opinion in Solid State and Materials Science. 10: 114-119. DOI: 10.1016/J.COSSMS.2006.11.004 |
0.411 |
|
| 2005 |
Kuroda MA, Cangellaris A, Leburton JP. Nonlinear transport and heat dissipation in metallic carbon nanotubes. Physical Review Letters. 95: 266803. PMID 16486384 DOI: 10.1103/Physrevlett.95.266803 |
0.337 |
|
| 2005 |
De Sousa JS, Leburton JP, Freire VN, Da Silva EF. Intraband absorption and Stark effect in silicon nanocrystals Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.155438 |
0.386 |
|
| 2005 |
Melnikov DV, Matagne P, Leburton J, Austing DG, Yu G, Tarucha S, Fettig J, Sobh N. Spin configurations in circular and rectangular vertical quantum dots in a magnetic field: Three-dimensional self-consistent simulations Physical Review B. 72. DOI: 10.1103/Physrevb.72.085331 |
0.457 |
|
| 2005 |
Hanson R, Elzerman JM, Van Beveren LHW, Vandersypen LMK, Zhang LH, Matagne P, Leburton JP, Kouwenhoven LP. Experiments and simulations on a few-electron quantum dot circuit with integrated charge read-out Aip Conference Proceedings. 772: 44-49. DOI: 10.1063/1.1993994 |
0.354 |
|
| 2005 |
Zhang LX, Melnikov DV, Leburton J. Simulation of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out Journal of Computational Electronics. 4: 111-114. DOI: 10.1007/S10825-005-7119-4 |
0.516 |
|
| 2004 |
Ravishankar R, Matagne P, Leburton JP, Martin RM, Tarucha S. Three-dimensional self-consistent simulations of symmetric and asymmetric laterally coupled vertical quantum dots Physical Review B. 69. DOI: 10.1103/Physrevb.69.035326 |
0.409 |
|
| 2004 |
Zhang L, Leburton JP. Electrostatic cross-talk between quantum dot and quantum point contact charge read-out in few-electron quantum dot circuits Journal of Applied Physics. 96: 7352-7356. DOI: 10.1063/1.1814811 |
0.391 |
|
| 2004 |
Zhang LX, Leburton JP, Hanson R, Kouwenhoven LP. Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit Applied Physics Letters. 85: 2628-2630. DOI: 10.1063/1.1790605 |
0.503 |
|
| 2003 |
Sheng W, Leburton J. Absence of correlation between built-in electric dipole moment and quantum Stark effect in single InAs/GaAs self-assembled quantum dots Physical Review B. 67. DOI: 10.1103/PhysRevB.67.125308 |
0.37 |
|
| 2003 |
Sheng W, Leburton JP. 2D-3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 17: 50-55. DOI: 10.1016/S1386-9477(02)00745-2 |
0.367 |
|
| 2003 |
Leburton JP, Nagaraja S, Matagne P, Martin RM. Spintronics and exchange engineering in coupled quantum dots Microelectronics Journal. 34: 485-489. DOI: 10.1016/S0026-2692(03)00080-6 |
0.378 |
|
| 2003 |
Adawi AM, Zibik EA, Wilson LR, Lemaître A, Sheng W, Cockburn JW, Skolnick MS, Leburton JP, Hopkinson M, Hill G, Liew SL, Cullis AG. Observation of in-plane polarized intersublevel absorption in strongly coupled InGaAs/GaAs self assembled quantum dots Physica Status Solidi (B). 238: 341-344. DOI: 10.1002/PSSB.200303087 |
0.329 |
|
| 2003 |
Sheng W, Leburton JP. Electronic properties of InAs/GaAs self-assembled quantum dots: Beyond the effective mass approximation Physica Status Solidi (B) Basic Research. 237: 394-404. DOI: 10.1002/pssb.200301778 |
0.399 |
|
| 2002 |
Sheng W, Leburton JP. Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots. Physical Review Letters. 88: 167401. PMID 11955264 DOI: 10.1103/Physrevlett.88.167401 |
0.495 |
|
| 2002 |
Matagne P, Leburton J. Self-consistent simulations of a four-gated vertical quantum dot Physical Review B. 65. DOI: 10.1103/Physrevb.65.155311 |
0.495 |
|
| 2002 |
Matagne P, Leburton JP, Austing DG, Tarucha S. Shell charging and spin-filling sequences in realistic vertical quantum dots Physical Review B. 65. DOI: 10.1103/Physrevb.65.085325 |
0.462 |
|
| 2002 |
Sheng W, Leburton JP. Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules Applied Physics Letters. 81: 4449-4451. DOI: 10.1063/1.1526167 |
0.472 |
|
| 2002 |
de Sousa JS, Thean AV, Leburton JP, Freire VN. Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories Journal of Applied Physics. 92: 6182-6187. DOI: 10.1063/1.1509105 |
0.43 |
|
| 2002 |
Sheng W, Leburton JP. Interband transition distributions in the optical spectra of InAs/GaAs self-assembled quantum dots Applied Physics Letters. 80: 2755-2757. DOI: 10.1063/1.1469214 |
0.372 |
|
| 2002 |
Matagne P, Leburton J, Austing D, Tarucha S. Hund's first rule and addition energy spectra of cylindrical quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 679-682. DOI: 10.1016/S1386-9477(02)00257-6 |
0.352 |
|
| 2001 |
Sheng W, Leburton J. Enhanced intraband transitions with strong electric-field asymmetry in stacked InAs/GaAs self-assembled quantum dots Physical Review B. 64. DOI: 10.1103/Physrevb.64.153302 |
0.426 |
|
| 2001 |
Sheng W, Leburton J. Electron-hole alignment in InAs/GaAs self-assembled quantum dots: Effects of chemical composition and dot shape Physical Review B. 63. DOI: 10.1103/PHYSREVB.63.161301 |
0.383 |
|
| 2001 |
Sheng W, Leburton JP. Enhanced intraband stark effects in stacked InAs/GaAs self-assembled quantum dots Applied Physics Letters. 78: 1258-1260. DOI: 10.1063/1.1351851 |
0.509 |
|
| 2001 |
Thean A, Leburton JP. Stark effect and single-electron charging in silicon nanocrystal quantum dots Journal of Applied Physics. 89: 2808-2815. DOI: 10.1063/1.1334645 |
0.396 |
|
| 2001 |
Austing D, Tokura Y, Tarucha S, Matagne P, Leburton J. Addition energy spectrum of a quantum dot disk up to the third shell Physica E: Low-Dimensional Systems and Nanostructures. 11: 63-67. DOI: 10.1016/S1386-9477(01)00191-6 |
0.499 |
|
| 2000 |
Matagne P, Leburton J, Destine J, Cantraine G. Modeling of the Electronic Properties of Vertical Quantum Dots by the Finite Element Method Cmes-Computer Modeling in Engineering & Sciences. 1: 1-10. DOI: 10.3970/Cmes.2000.001.001 |
0.447 |
|
| 2000 |
Kim YH, Lee IH, Nagaraja S, Leburton JP, Hood RQ, Martin RM. Two-dimensional limit of exchange-correlation energy functional approximations Physical Review B - Condensed Matter and Materials Physics. 61: 5202-5211. DOI: 10.1103/Physrevb.61.5202 |
0.398 |
|
| 2000 |
Lyanda-Geller Y, Leburton JP. Far-infrared stimulated emission tunable by modulation of acoustic phonon scattering in quantum dot structures Semiconductor Science and Technology. 15: 700-703. DOI: 10.1088/0268-1242/15/7/308 |
0.346 |
|
| 2000 |
Požela K, Naran SB, Leburton J, Heyman JN. Structure variation of intersubband electron–acoustic phonon scattering rate in coupled quantum wells Applied Physics Letters. 77: 265-267. DOI: 10.1063/1.126945 |
0.33 |
|
| 1999 |
Leburton J, Fonseca LRC, Shumway J, Ceperley D, Martin RM. Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots Japanese Journal of Applied Physics. 38: 357-365. DOI: 10.1143/JJAP.38.357 |
0.358 |
|
| 1999 |
Leburton JP, Fonseca LRC, Shumway J, Ceperley D, Martin RM. Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 357-365. DOI: 10.1143/Jjap.38.357 |
0.514 |
|
| 1999 |
Nagaraja S, Leburton J, Martin RM. Electronic Properties And Spin Polarization In Coupled Quantum Dots Physical Review B. 60: 8759-8766. DOI: 10.1103/Physrevb.60.8759 |
0.444 |
|
| 1999 |
Lee I, Ahn K, Kim Y, Martin RM, Leburton J. Capacitive energies of quantum dots with hydrogenic impurity Physical Review B. 60: 13720-13726. DOI: 10.1103/Physrevb.60.13720 |
0.432 |
|
| 1999 |
Leburton J, Fonseca LRC, Nagaraja S, Shumway J, Ceperley D, Martin RM. Electronic structure and many-body effects in self-assembled quantum dots Journal of Physics: Condensed Matter. 11: 5953-5967. DOI: 10.1088/0953-8984/11/31/305 |
0.48 |
|
| 1999 |
Nagaraja S, Leburton J. Charging energy and spin polarization in artificial atoms and molecules Journal of Electronic Materials. 28: 405-413. DOI: 10.1007/S11664-999-0088-9 |
0.496 |
|
| 1998 |
LEBURTON J, JULIEN FH, LYANDA-GELLER Y. ADVANCED CONCEPTS IN INTERSUBBAND UNIPOLAR LASERS International Journal of High Speed Electronics and Systems. 9: 1163-1188. DOI: 10.1142/S0129156498000452 |
0.411 |
|
| 1998 |
LEBURTON J. SCATTERING TIME ENGINEERING IN QUANTUM-BASED ELECTRONIC DEVICES International Journal of High Speed Electronics and Systems. 9: 125-144. DOI: 10.1142/S0129156498000075 |
0.515 |
|
| 1998 |
Fonseca L, Jimenez J, Leburton J. Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems Physical Review B. 58: 9955-9960. DOI: 10.1103/Physrevb.58.9955 |
0.471 |
|
| 1998 |
Lee I, Rao V, Martin RM, Leburton J. Shell filling of artificial atoms within density-functional theory Physical Review B. 57: 9035-9042. DOI: 10.1103/Physrevb.57.9035 |
0.401 |
|
| 1998 |
Lyanda-Geller Y, Leburton JP. Phonon modulation of Stark-cyclotron resonances Physica E: Low-Dimensional Systems and Nanostructures. 2: 73-77. DOI: 10.1016/S1386-9477(98)00017-4 |
0.338 |
|
| 1997 |
Nagaraja S, Matagne P, Thean V, Leburton J, Kim Y, Martin RM. Shell-filling effects and Coulomb degeneracy in planar quantum-dot structures Physical Review B. 56: 15752-15759. DOI: 10.1103/Physrevb.56.15752 |
0.436 |
|
| 1997 |
Thean VY, Nagaraja S, Leburton J. Three-dimensional self-consistent simulation of interface and dopant disorders in delta-doped grid-gate quantum-dot devices Journal of Applied Physics. 82: 1678-1686. DOI: 10.1063/1.365967 |
0.443 |
|
| 1997 |
Wang J, Leburton J, Pozela J. Phonon dispersion and electron–polar optical phonon interaction in coupled quantum-well structures in the modified image–charge ansatz approach Journal of Applied Physics. 81: 3468-3473. DOI: 10.1063/1.365044 |
0.468 |
|
| 1997 |
Jimenez JL, Fonseca LRC, Brady DJ, Leburton J, Wohlert DE, Cheng KY. The quantum dot spectrometer Applied Physics Letters. 71: 3558-3560. DOI: 10.1063/1.120390 |
0.421 |
|
| 1997 |
Gauthier-Lafaye O, Sauvage S, Boucaud P, Julien FH, Prazeres R, Glotin F, Ortega J, Thierry-Mieg V, Planel R, Leburton J, Berger V. Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser Applied Physics Letters. 70: 3197-3199. DOI: 10.1063/1.119125 |
0.416 |
|
| 1997 |
Leburton J, Lyanda-Geller YB. Tunable negative differential resistance in anti-dot diffraction field effect transistor Applied Physics Letters. 70: 634-636. DOI: 10.1063/1.118212 |
0.449 |
|
| 1996 |
Wang J, Leburton J, Moussa Z, Julien FH, Sa’ar A. Simulation of optically pumped mid‐infrared intersubband semiconductor laser structures Journal of Applied Physics. 80: 1970-1978. DOI: 10.1063/1.363088 |
0.407 |
|
| 1996 |
Lavon Y, Sa’ar A, Wang J, Leburton J, Julien FH, Planel R. Thermally induced charged carrier transfer and intersubband transitions in an asymmetrical coupled quantum well structure Applied Physics Letters. 69: 197-199. DOI: 10.1063/1.117370 |
0.393 |
|
| 1996 |
Boucaud P, Julien F, Prazeres R, Ortega J, Berger V, Nagle J, Leburton J. Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser Electronics Letters. 32: 2357. DOI: 10.1049/el:19961550 |
0.347 |
|
| 1996 |
Johnston SW, Leburton JP, Lyanda-Geller Y. Magnetic density gap in the quantum Hall regime Superlattices and Microstructures. 20: 64-73. DOI: 10.1006/Spmi.1996.0050 |
0.465 |
|
| 1996 |
Julien F, Moussa Z, Boucaud P, Lavon Y, Sa'ar A, Wang J, Leburton J, Berger V, Nagle J, Planel R. Intersubband mid-infrared emission in optically pumped quantum wells Superlattices and Microstructures. 19: 69-79. DOI: 10.1006/Spmi.1996.0010 |
0.383 |
|
| 1995 |
Lyanda-Geller Y, Leburton JP. Antiresonant hopping conductance and negative magnetoresistance in quantum-box superlattices Physical Review B. 52: 2779-2783. DOI: 10.1103/Physrevb.52.2779 |
0.47 |
|
| 1995 |
Lyanda-Geller Y, Leburton JP. Hopping conductance in quantum box superlattices Semiconductor Science and Technology. 10: 1463-1469. DOI: 10.1088/0268-1242/10/11/006 |
0.408 |
|
| 1995 |
Mansour NS, Sirenko YM, Kim KW, Littlejohn MA, Wang J, Leburton JP. Carrier capture in cylindrical quantum wires Applied Physics Letters. 67: 3480. DOI: 10.1063/1.115253 |
0.494 |
|
| 1995 |
Lyanda‐Geller YB, Leburton J. Phonon‐assisted transmission in resonant interband tunneling devices Applied Physics Letters. 67: 1423-1425. DOI: 10.1063/1.114514 |
0.4 |
|
| 1994 |
Kawamura T, Fertig HA, Leburton J. Quantum transport through one-dimensional double-quantum-well systems. Physical Review B. 49: 5105-5108. PMID 10011459 DOI: 10.1103/Physrevb.49.5105 |
0.452 |
|
| 1994 |
Educato JL, Leburton J. Intersubband relaxation in modulation-doped multiple-quantum-well structures. Physical Review B. 49: 2177-2180. PMID 10011030 DOI: 10.1103/Physrevb.49.2177 |
0.452 |
|
| 1994 |
Jovanovic D, Leburton JP, Chang H, Grundbacher R, Adesida I. Disorder-induced resonant tunneling in planar quantum-dot nanostructures. Physical Review. B, Condensed Matter. 50: 5412-5419. PMID 9976883 DOI: 10.1103/Physrevb.50.5412 |
0.429 |
|
| 1994 |
Jovanovic D, Leburton J, Ismail K. Evidence of resonant intersubband optical phonon scattering in quantum wires Semiconductor Science and Technology. 9: 882-885. DOI: 10.1088/0268-1242/9/5S/130 |
0.435 |
|
| 1994 |
Chang H, Grundbacher R, Kawanura T, Leburton J-, Adesida I. Oscillatory conductance in a double-bend quantum dot device Semiconductor Science and Technology. 9: 210-212. DOI: 10.1088/0268-1242/9/2/014 |
0.456 |
|
| 1994 |
Bigelow JM, Leburton J. Self‐consistent simulation of quantum transport in dual‐gate field‐effect transistors Journal of Applied Physics. 76: 2887-2892. DOI: 10.1063/1.357526 |
0.31 |
|
| 1994 |
Chang H, Grundbacher R, Jovanovic D, Leburton J, Adesida I. A laterally tunable quantum dot transistor Journal of Applied Physics. 76: 3209-3211. DOI: 10.1063/1.357510 |
0.505 |
|
| 1994 |
Stocker JE, Leburton J, Noguchi H, Sakaki H. Acoustic-phonon limited mobility in periodically modulated quantum wires Journal of Applied Physics. 76: 4231-4236. DOI: 10.1063/1.357331 |
0.409 |
|
| 1994 |
Mickevičius R, Mitin V, Harithsa UK, Jovanovic D, Leburton JP. Superlinear electron transport and noise in quantum wires Journal of Applied Physics. 75: 973-978. DOI: 10.1063/1.356453 |
0.31 |
|
| 1994 |
Hickernell RK, Christensen DH, Pellegrino JG, Wang J, Leburton JP. Determination of the complex refractive index of individual quantum wells from distributed reflectance Journal of Applied Physics. 75: 3056-3059. DOI: 10.1063/1.356153 |
0.327 |
|
| 1994 |
Wang J, Zucker JE, Leburton JP, Chang TY, Sauer NJ. Design of high-performance quantum well electron transfer modulators via self-consistent modeling Applied Physics Letters. 65: 2196-2198. DOI: 10.1063/1.112964 |
0.47 |
|
| 1993 |
Kawamura T, Leburton J. Quantum ballistic transport through a double-bend waveguide structure: Effects of disorder. Physical Review B. 48: 8857-8865. PMID 10007103 DOI: 10.1103/Physrevb.48.8857 |
0.475 |
|
| 1993 |
Educato JL, Leburton J, Boucaud P, Vagos P, Julien FH. Influence of interface phonons on intersubband scattering in asymmetric coupled quantum wells. Physical Review B. 47: 12949-12952. PMID 10005498 DOI: 10.1103/Physrevb.47.12949 |
0.446 |
|
| 1993 |
Leburton JP. Intersubband stimulated emission and optical gain by ‘‘phonon pumping’’ in quantum wires Journal of Applied Physics. 74: 1417-1420. DOI: 10.1063/1.354900 |
0.393 |
|
| 1993 |
Jiang W, Leburton JP. Confined and interface phonon scattering in finite barrier GaAs/AlGaAs quantum wires Journal of Applied Physics. 74: 1652-1659. DOI: 10.1063/1.354816 |
0.454 |
|
| 1993 |
Jiang W, Leburton J. Importance of confined longitudinal optical phonons in intersubband and backward scattering in rectangular AlGaAs/GaAs quantum wires Journal of Applied Physics. 74: 2097-2099. DOI: 10.1063/1.354729 |
0.423 |
|
| 1993 |
Educato JL, Leburton J. A rate equation formalism for electron and phonon dynamics in undoped quantum wells Journal of Applied Physics. 74: 2626-2632. DOI: 10.1063/1.354653 |
0.433 |
|
| 1993 |
Kawamura T, Leburton JP. Quantum conduction through double‐bend electron waveguide structures Journal of Applied Physics. 73: 3577-3579. DOI: 10.1063/1.352914 |
0.413 |
|
| 1993 |
Wang J, Leburton JP, Educato JL, Zucker JE. Speed response analysis of an electron‐transfer multiple‐quantum‐well waveguide modulator Journal of Applied Physics. 73: 4669-4679. DOI: 10.1063/1.352762 |
0.377 |
|
| 1993 |
Jovanovic D, Leburton J, Ismail K, Bigelow JM, Degani MH. Intersubband optic phonon resonances in electrostatically confined quantum wires Applied Physics Letters. 62: 2824-2826. DOI: 10.1063/1.109222 |
0.419 |
|
| 1993 |
Wang J, Leburton J. Phonon-assisted sequential tunneling in biased quantum well structures Superlattices and Microstructures. 13: 61-66. DOI: 10.1006/Spmi.1993.1012 |
0.402 |
|
| 1992 |
Bigelow JM, Leburton J. Quantum thermoelectric effects in resonant tunneling real‐space transfer Journal of Applied Physics. 72: 4390-4398. DOI: 10.1063/1.352205 |
0.445 |
|
| 1992 |
Wang J, Leburton J. Erratum: Time response of a tunable‐electron‐density quantum well and reservoir structure [Appl. Phys. Lett. 59, 2709 (1991)] Applied Physics Letters. 60: 1639-1639. DOI: 10.1063/1.107445 |
0.413 |
|
| 1991 |
Degani MH, Leburton J. Single-electron states and conductance in lateral-surface superlattices. Physical Review B. 44: 10901-10904. PMID 9999121 DOI: 10.1103/Physrevb.44.10901 |
0.333 |
|
| 1991 |
Sugg A, Leburton J. Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique Ieee Journal of Quantum Electronics. 27: 224-231. DOI: 10.1109/3.78223 |
0.305 |
|
| 1991 |
Educato JL, Leburton JP, Wang J, Bailey DW. Intervalley shunting of electrons in modulation-doped multiple-quantum-well structures Physical Review B. 44: 8365-8368. DOI: 10.1103/Physrevb.44.8365 |
0.413 |
|
| 1991 |
Briggs S, Leburton JP. Transient simulation of electron emission from quantum-wire structures Physical Review B. 43: 4785-4791. DOI: 10.1103/Physrevb.43.4785 |
0.475 |
|
| 1991 |
Wang J, Leburton JP. Time response of a tunable‐electron‐density quantum well and reservoir structure Applied Physics Letters. 59: 2709-2711. DOI: 10.1063/1.105892 |
0.49 |
|
| 1990 |
Wang J, Leburton J. Electro-optic effects in GaAsAlGaAs multiple quantum well structures Superlattices and Microstructures. 8: 191-194. DOI: 10.1016/0749-6036(90)90090-T |
0.315 |
|
| 1989 |
Briggs S, Mason BA, Leburton JP. Self-consistent polaron scattering rates in quasi-one-dimensional structures Physical Review B. 40: 12001-12004. DOI: 10.1103/Physrevb.40.12001 |
0.418 |
|
| 1989 |
Briggs S, Leburton JP. Breakdown of the linear approximation to the Boltzmann transport equation in quasi-one-dimensional semiconductors Physical Review B. 39: 8025-8028. DOI: 10.1103/Physrevb.39.8025 |
0.39 |
|
| 1989 |
Weng Y, Leburton JP. Impurity scattering with semiclassical screening in multiband quasi-one-dimensional systems Journal of Applied Physics. 65: 3089-3095. DOI: 10.1063/1.342704 |
0.307 |
|
| 1989 |
Briggs S, Jovanovic D, Leburton J. Intersubband population inversion in quantum wire structures Applied Physics Letters. 54: 2012-2014. DOI: 10.1063/1.101371 |
0.407 |
|
| 1989 |
Educato JL, Bailey DW, Sugg A, Hess K, Leburton JP. Intersubband dynamics in modulation doped quantum wells Solid State Electronics. 32: 1615-1619. DOI: 10.1016/0038-1101(89)90283-9 |
0.481 |
|
| 1988 |
Leburton J. Phonon ionization of neutral donors in lightly doped GaAs: A model for the conductance oscillations in semiconductor-insulator-semiconductor tunnel structures. Physical Review B. 38: 4085-4095. PMID 9946782 DOI: 10.1103/Physrevb.38.4085 |
0.401 |
|
| 1988 |
Briggs S, Leburton JP. Size effects in multisubband quantum wire structures Physical Review B. 38: 8163-8170. DOI: 10.1103/Physrevb.38.8163 |
0.431 |
|
| 1987 |
Kahen KB, Leburton JP. Index of refraction of GaAsAlxGa1-xAs superlattices and multiple quantum wells Superlattices and Microstructures. 3: 251-256. DOI: 10.1016/0749-6036(87)90067-X |
0.331 |
|
| 1986 |
Kahen KB, Leburton JP. Optical constants of GaAs-AlxGa1-xAs superlattices and multiple quantum wells Physical Review B. 33: 5465-5472. DOI: 10.1103/Physrevb.33.5465 |
0.413 |
|
| 1986 |
Kahen KB, Leburton JP. Exciton effects in the index of refraction of multiple quantum wells and superlattices Applied Physics Letters. 49: 734-736. DOI: 10.1063/1.97583 |
0.452 |
|
| 1985 |
Leburton J. Origin of the current oscillations in GaAs-AlGaAs tunnel junctions. Physical Review B. 31: 4080-4082. PMID 9936327 DOI: 10.1103/Physrevb.31.4080 |
0.328 |
|
| 1985 |
Kahen KB, Leburton JP. Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells Applied Physics Letters. 47: 508-510. DOI: 10.1063/1.96108 |
0.417 |
|
| 1985 |
Leburton J. Electron-phonon interaction and current oscillations in GaAs-AlGaAs tunnel junctions Physica B+C. 134: 32-35. DOI: 10.1016/0378-4363(85)90316-X |
0.382 |
|
| 1983 |
Leburton JP. A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around Γ Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 1: 415. DOI: 10.1116/1.582616 |
0.32 |
|
| 1983 |
Leburton J, Hess K. High energy diffusion equation for polar semiconductors Physica B-Condensed Matter. 211-213. DOI: 10.1016/0378-4363(83)90484-9 |
0.341 |
|
| 1982 |
Leburton JP, Hess K. Energy-diffusion equation for an electron gas interacting with polar optical phonons Physical Review B. 26: 5623-5633. DOI: 10.1103/Physrevb.26.5623 |
0.312 |
|
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