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Elison d. Matioli, Ph.D. - Publications

Affiliations: 
2010 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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65 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Samizadeh Nikoo M, Jafari A, Perera N, Zhu M, Santoruvo G, Matioli E. Nanoplasma-enabled picosecond switches for ultrafast electronics. Nature. 579: 534-539. PMID 32214267 DOI: 10.1038/S41586-020-2118-Y  0.343
2020 Nela L, Erp RV, Kampitsis G, Yildirim HK, Ma J, Matioli E. Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes Ieee Transactions On Power Electronics. 1-1. DOI: 10.1109/Tpel.2020.3008226  0.334
2020 Jafari A, Nikoo MS, Perera N, Yildirim HK, Karakaya F, Soleimanzadeh R, Matioli E. Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies Ieee Transactions On Power Electronics. 35: 12595-12600. DOI: 10.1109/Tpel.2020.2990628  0.359
2020 Perera N, Nikoo MS, Jafari A, Nela L, Matioli E. $C_{\text{oss}}$ Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses Ieee Transactions On Power Electronics. 35: 12585-12589. DOI: 10.1109/Tpel.2020.2990370  0.318
2020 Samizadeh Nikoo M, Jafari A, Perera N, Matioli E. Efficient High Step-Up Operation in Boost Converters Based on Impulse Rectification Ieee Transactions On Power Electronics. 35: 11287-11293. DOI: 10.1109/Tpel.2020.2982931  0.356
2020 Nikoo MS, Jafari A, Perera N, Matioli E. Negative Resistance in Cascode Transistors Ieee Transactions On Power Electronics. 35: 9978-9981. DOI: 10.1109/Tpel.2020.2978658  0.392
2020 van Erp R, Kampitsis G, Matioli E. Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters Ieee Transactions On Power Electronics. 35: 7235-7245. DOI: 10.1109/Tpel.2019.2959736  0.347
2020 Jafari A, Nikoo MS, Karakaya F, Matioli E. Enhanced DAB for Efficiency Preservation Using Adjustable-Tap High-Frequency Transformer Ieee Transactions On Power Electronics. 35: 6673-6677. DOI: 10.1109/Tpel.2019.2958632  0.349
2020 Nikoo MS, Jafari A, Perera N, Matioli E. New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors Ieee Transactions On Power Electronics. 35: 6663-6667. DOI: 10.1109/Tpel.2019.2958000  0.321
2020 Samizadeh Nikoo M, Jafari A, Perera N, Matioli E. Measurement of Large-Signal C OSS and C OSS Losses of Transistors Based on Nonlinear Resonance Ieee Transactions On Power Electronics. 35: 2242-2246. DOI: 10.1109/Tpel.2019.2938922  0.348
2020 Faraji R, Farzanehfard H, Kampitsis G, Mattavelli M, Matioli E, Esteki M. Fully Soft-Switched High Step-Up Nonisolated Three-Port DC–DC Converter Using GaN HEMTs Ieee Transactions On Industrial Electronics. 67: 8371-8380. DOI: 10.1109/Tie.2019.2944068  0.348
2020 Santoruvo G, Nikoo MS, Matioli E. Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires Ieee Microwave and Wireless Components Letters. 30: 66-69. DOI: 10.1109/Lmwc.2019.2953632  0.404
2020 Erine C, Ma J, Santoruvo G, Matioli E. Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors Ieee Electron Device Letters. 41: 321-324. DOI: 10.1109/Led.2020.2967458  0.325
2020 Nela L, Kampitsis G, Ma J, Matioli E. Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits Ieee Electron Device Letters. 41: 99-102. DOI: 10.1109/Led.2019.2957700  0.388
2020 Soleimanzadeh R, Naamoun M, Khadar RA, van Erp R, Matioli E. H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon Ieee Electron Device Letters. 41: 119-122. DOI: 10.1109/Led.2019.2953245  0.379
2019 Nikoo MS, Jafari A, Matioli E. GaN Transistors for Miniaturized Pulsed-Power Sources Ieee Transactions On Plasma Science. 47: 3241-3245. DOI: 10.1109/Tps.2019.2917657  0.358
2019 Ma J, Santoruvo G, Nela L, Wang T, Matioli E. Impact of Fin Width on Tri-Gate GaN MOSHEMTs Ieee Transactions On Electron Devices. 66: 4068-4074. DOI: 10.1109/Ted.2019.2925859  0.376
2019 Zhu M, Ma J, Nela L, Erine C, Matioli E. High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance Ieee Electron Device Letters. 40: 1289-1292. DOI: 10.1109/Led.2019.2922204  0.369
2019 Nikoo MS, Santoruvo G, Erine C, Jafari A, Matioli E. On the Dynamic Performance of Laterally Gated Transistors Ieee Electron Device Letters. 40: 1171-1174. DOI: 10.1109/Led.2019.2920116  0.342
2019 Nikoo MS, Jafari A, Matioli E. On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control Ieee Electron Device Letters. 40: 613-615. DOI: 10.1109/Led.2019.2898043  0.38
2019 Nela L, Zhu M, Ma J, Matioli E. High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal Ieee Electron Device Letters. 40: 439-442. DOI: 10.1109/Led.2019.2896359  0.412
2019 Khadar RA, Liu C, Soleimanzadeh R, Matioli E. Fully Vertical GaN-on-Si power MOSFETs Ieee Electron Device Letters. 40: 443-446. DOI: 10.1109/Led.2019.2894177  0.38
2019 Ma J, Kampitsis G, Xiang P, Cheng K, Matioli E. Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance Ieee Electron Device Letters. 40: 275-278. DOI: 10.1109/Led.2018.2887199  0.354
2019 Soleimanzadeh R, Khadar RA, Naamoun M, van Erp R, Matioli E. Near-junction heat spreaders for hot spot thermal management of high power density electronic devices Journal of Applied Physics. 126: 165113. DOI: 10.1063/1.5123615  0.327
2018 Wang T, Ma J, Matioli E. 1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes Ieee Electron Device Letters. 39: 1038-1041. DOI: 10.1109/Led.2018.2842031  0.373
2018 Liu C, Khadar RA, Matioli E. Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes Ieee Electron Device Letters. 39: 1034-1037. DOI: 10.1109/Led.2018.2841959  0.384
2018 Khadar RA, Liu C, Zhang L, Xiang P, Cheng K, Matioli E. 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2 Ieee Electron Device Letters. 39: 401-404. DOI: 10.1109/Led.2018.2793669  0.367
2018 Liu C, Khadar RA, Matioli E. GaN-on-Si Quasi-Vertical Power MOSFETs Ieee Electron Device Letters. 39: 71-74. DOI: 10.1109/Led.2017.2779445  0.403
2018 Ma J, Erine C, Xiang P, Cheng K, Matioli E. Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance Applied Physics Letters. 113: 242102. DOI: 10.1063/1.5064407  0.351
2018 Ma J, Matioli E. 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current Applied Physics Letters. 112: 52101. DOI: 10.1063/1.5012866  0.368
2017 Ma J, Zhu M, Matioli E. 900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain Ieee Electron Device Letters. 38: 1704-1707. DOI: 10.1109/Led.2017.2761911  0.35
2017 Santoruvo G, Matioli E. In-Plane-Gate GaN Transistors for High-Power RF Applications Ieee Electron Device Letters. 38: 1413-1416. DOI: 10.1109/Led.2017.2737658  0.402
2017 Ma J, Zanuz DC, Matioli E. Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage Ieee Electron Device Letters. 38: 1298-1301. DOI: 10.1109/Led.2017.2734644  0.336
2017 Ma J, Matioli E. Slanted Tri-Gates for High-Voltage GaN Power Devices Ieee Electron Device Letters. 38: 1305-1308. DOI: 10.1109/Led.2017.2731799  0.388
2017 Ma J, Matioli E. High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate Ieee Electron Device Letters. 38: 367-370. DOI: 10.1109/Led.2017.2661755  0.374
2017 Ma J, Matioli E. High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors Ieee Electron Device Letters. 38: 83-86. DOI: 10.1109/Led.2016.2632044  0.382
2016 Ma J, Santoruvo G, Tandon P, Matioli E. Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure Ieee Transactions On Electron Devices. 63: 3614-3619. DOI: 10.1109/Ted.2016.2587801  0.409
2016 Santoruvo G, Allain A, Ovchinnikov D, Matioli E. Magneto-ballistic transport in GaN nanowires Applied Physics Letters. 109: 103102. DOI: 10.1063/1.4962332  0.314
2015 Matioli E, Palacios T. Room-temperature ballistic transport in III-nitride heterostructures. Nano Letters. 15: 1070-5. PMID 25614931 DOI: 10.1021/Nl504029R  0.352
2013 Sakaguchi J, Araki T, Fujishima T, Matioli E, Palacios T, Nanishi Y. Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jd06  0.317
2013 Matioli E, Lu B, Palacios T. Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure Ieee Transactions On Electron Devices. 60: 3365-3370. DOI: 10.1109/Ted.2013.2279120  0.376
2012 Lu B, Matioli E, Palacios T. Tri-Gate Normally-Off GaN Power MISFET Ieee Electron Device Letters. 33: 360-362. DOI: 10.1109/Led.2011.2179971  0.38
2012 Matioli E, Brinkley S, Kelchner KM, Hu YL, Nakamura S, DenBaars S, Speck J, Weisbuch C. High-brightness polarized light-emitting diodes Light: Science and Applications. 1. DOI: 10.1038/Lsa.2012.22  0.665
2011 Revaux A, Dantelle G, Brinkley S, Matioli E, Weisbuch C, Boilot J, Gacoin T. YAG:Ce nanoparticle based converter layer for white LEDs Proceedings of Spie. 8102. DOI: 10.1117/12.892717  0.611
2011 Matioli E, Brinkley S, Kelchner KM, Nakamura S, Denbaars S, Speck J, Weisbuch C. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals Applied Physics Letters. 98. DOI: 10.1063/1.3602319  0.475
2011 Lang JR, Neufeld CJ, Hurni CA, Cruz SC, Matioli E, Mishra UK, Speck JS. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3 -based molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3575563  0.375
2011 Rangel E, Matioli E, Choi YS, Weisbuch C, Speck JS, Hu EL. Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3554417  0.458
2011 Matioli E, Weisbuch C. Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection Journal of Applied Physics. 109: 73114. DOI: 10.1063/1.3549730  0.485
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  0.402
2010 Schierhorn M, Boettcher SW, Peet JH, Matioli E, Bazan GC, Stucky GD, Moskovits M. CdSe nanorods dominate photocurrent of hybrid CdSe-P3HT photovoltaic cell. Acs Nano. 4: 6132-6. PMID 20873813 DOI: 10.1021/Nn101742C  0.384
2010 Matioli E, Fleury B, Rangel E, Melo T, Hu E, Speck J, Weisbuch C. High extraction efficiency GAN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals Applied Physics Express. 3. DOI: 10.1143/Apex.3.032103  0.69
2010 Matioli E, Weisbuch C. Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs Journal of Physics D. 43: 354005. DOI: 10.1088/0022-3727/43/35/354005  0.703
2010 Rangel E, Matioli E, Chen HT, Choi YS, Weisbuch C, Speck JS, Hu EL. Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3480421  0.499
2010 Matioli E, Fleury B, Rangel E, Hu E, Speck J, Weisbuch C. Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes Journal of Applied Physics. 107. DOI: 10.1063/1.3309837  0.522
2010 Matioli E, Rangel E, Iza M, Fleury B, Pfaff N, Speck J, Hu E, Weisbuch C. High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals Applied Physics Letters. 96. DOI: 10.1063/1.3293442  0.521
2009 Matioli E, Keller S, Wu F, Choi YS, Hu E, Speck J, Weisbuch C. Growth of embedded photonic crystals for GaN-based optoelectronic devices Journal of Applied Physics. 106. DOI: 10.1063/1.3174385  0.482
2009 Getty A, Matioli E, Iza M, Weisbuch C, Speck JS. Electroluminescent measurement of the internal quantum efficiency of light emitting diodes Applied Physics Letters. 94: 181102. DOI: 10.1063/1.3129866  0.479
2009 Truong TA, Campos LM, Matioli E, Meinel I, Hawker CJ, Weisbuch C, Petroff PM. Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal Applied Physics Letters. 94. DOI: 10.1063/1.3067837  0.709
2009 Matioli E, Iza M, Choi YS, Wu F, Keller S, Masui H, Hu E, Speck J, Weisbuch C. GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S675-S679. DOI: 10.1002/Pssc.200880987  0.668
2008 Choi YS, Iza M, Matioli E, Koblmüller G, Speck JS, Weisbuch C, Hu EL. Submicron-thick microcavity InGaN light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.764696  0.422
2008 McGroddy K, David A, Matioli E, Iza M, Nakamura S, Denbaars S, Speck JS, Weisbuch C, Hu EL. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2978068  0.701
2008 David A, Moran B, McGroddy K, Matioli E, Hu EL, Denbaars SP, Nakamura S, Weisbuch C. GaNInGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth Applied Physics Letters. 92. DOI: 10.1063/1.2898513  0.486
2007 Choi YS, Iza M, Matioli E, Koblmüller G, Speck JS, Weisbuch C, Hu EL. 2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process Applied Physics Letters. 91. DOI: 10.1063/1.2769397  0.445
2007 Keller S, Fichtenbaum NA, Schaake C, Neufeld CJ, David A, Matioli E, Wu Y, DenBaars SP, Speck JS, Weisbuch C, Mishra UK. Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells Physica Status Solidi (B) Basic Research. 244: 1797-1801. DOI: 10.1002/Pssb.200674752  0.647
2006 David A, Fujii T, Matioli E, Sharma R, Nakamura S, DenBaars SP, Weisbuch C, Benisty H. GaN light-emitting diodes with Archimedean lattice photonic crystals Applied Physics Letters. 88: 73510. DOI: 10.1063/1.2168673  0.406
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