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Rachel M. Frazier, Ph.D. - Publications

Affiliations: 
2005 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering
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46 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Hite J, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Ferromagnetic Properties of GaGdN Co-Doped with Si Ecs Transactions. 3: 409-414. DOI: 10.1149/1.2357231  0.456
2008 Hite JK, Allums KK, Thaler GT, Abernathy CR, Pearton SJ, Frazier RM, Dwivedi R, Wilkins R, Zavada JM. Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN New Journal of Physics. 10: 055005. DOI: 10.1088/1367-2630/10/5/055005  0.755
2007 Hite JK, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Brown E, Hömmerich U. Effect of Si Co Doping on Ferromagnetic Properties of GaGdN Journal of Electronic Materials. 36: 391-396. DOI: 10.1007/S11664-006-0040-1  0.833
2006 Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN Epilayers Mrs Proceedings. 955. DOI: 10.1557/PROC-0955-I10-02  0.463
2006 Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN epilayers Materials Research Society Symposium Proceedings. 955: 400-403. DOI: 10.1557/Proc-0955-I10-02  0.759
2006 Hite JK, Davies RP, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of Ferromagnetic GaGdN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-04  0.826
2006 Hite JK, Frazier RM, Davies R, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Effect of growth conditions on the magnetic characteristics of GaGdN Applied Physics Letters. 89: 092119. DOI: 10.1063/1.2337082  0.83
2006 Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN Applied Physics Letters. 88: 042102. DOI: 10.1063/1.2167790  0.819
2005 Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394  0.814
2005 Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Electrical and optical properties of GaCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1. DOI: 10.1116/1.1829059  0.734
2005 Chen WM, Buyanova IA, Nishibayashi K, Kayanuma K, Seo K, Murayama A, Oka Y, Thaler G, Frazier R, Abernathy CR, Ren F, Pearton SJ, Pan C, Chen G, Chyi J. Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection Applied Physics Letters. 87: 192107. DOI: 10.1063/1.2125125  0.671
2005 Gila BP, Hlad M, Onstine AH, Frazier R, Thaler GT, Herrero A, Lambers E, Abernathy CR, Pearton SJ, Anderson T, Jang S, Ren F, Moser N, Fitch RC, Freund M. Improved oxide passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2105987  0.723
2005 Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Growth and thermal stability of Ga(1-X) CrXN films Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1895479  0.783
2005 Frazier RM, Thaler GT, Leifer JY, Hite JK, Gila BP, Abernathy CR, Pearton SJ. Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy Applied Physics Letters. 86: 052101. DOI: 10.1063/1.1857074  0.826
2005 Pearton S, Norton D, Frazier R, Han S, Abernathy C, Zavada J. Spintronics device concepts Iee Proceedings - Circuits, Devices and Systems. 152: 312. DOI: 10.1049/IP-CDS:20045129  0.326
2005 Frazier RM, Thaler GT, Gila BP, Stapleton J, Overberg ME, Abernathy CR, Pearton SJ, Ren F, Zavada JM. AIN-based dilute magnetic semiconductors Journal of Electronic Materials. 34: 365-369. DOI: 10.1007/S11664-005-0112-7  0.828
2005 Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Heo YH, Ivill M, Norton DP, Park YD. Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides Cheminform. 36. DOI: 10.1002/CHIN.200543245  0.384
2004 Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Heo YH, Ivill M, Norton DP, Park YD. Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides Defect and Diffusion Forum. 17-46. DOI: 10.4028/Www.Scientific.Net/Ddf.230-232.17  0.65
2004 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic AlGaCrP Films by Ion Implantation Electrochemical and Solid-State Letters. 7. DOI: 10.1149/1.1640491  0.825
2004 Thaler GT, Frazier RM, Stapleton J, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM. Properties of (Ga, Mn)N With and Without Detectable Second Phases Electrochemical and Solid-State Letters. 7: G34-G36. DOI: 10.1149/1.1635771  0.769
2004 Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Liefer JY, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Optical and electrical properties of AlCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2758. DOI: 10.1116/1.1819927  0.757
2004 Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan C, Chen G, Chyi J, Zavada JM. Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2668. DOI: 10.1116/1.1819897  0.697
2004 Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Norton DP, Ren F, Park YD, Zavada JM, Buyanova IA, Chen WM, Hebard AF. Wide bandgap GaN-based semiconductors for spintronics Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/7/R03  0.759
2004 Polyakov AY, Smirnov NB, Govorkov AV, Pearton SJ, Frazier RM, Thaler GT, Abernathy CR, Zavada JM. High-dose Mn and Cr implantation into p-AlGaN films Semiconductor Science and Technology. 19: 1169-1173. DOI: 10.1088/0268-1242/19/10/001  0.755
2004 Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Liefer JY, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of highly Cr-doped AlN Applied Physics Letters. 85: 4067-4069. DOI: 10.1063/1.1812845  0.754
2004 Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of nucleation layer on the magnetic properties of GaMnN Applied Physics Letters. 84: 2578-2580. DOI: 10.1063/1.1695207  0.818
2004 Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN Applied Physics Letters. 84: 1314-1316. DOI: 10.1063/1.1649819  0.811
2004 Polyakov A, Govorkov A, Smirnov N, Pashkova N, Pearton S, Ip K, Frazier R, Abernathy C, Norton D, Zavada J, Wilson R. Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe Materials Science in Semiconductor Processing. 7: 77-81. DOI: 10.1016/J.Mssp.2004.03.001  0.537
2004 Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr Journal of Electronic Materials. 33: 384-388. DOI: 10.1007/S11664-004-0188-5  0.756
2004 Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Buyanova IA, Rudko GY, Chen WM, Pan C-, Chen G-, et al. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Journal of Electronic Materials. 33: 241-247. DOI: 10.1007/S11664-004-0186-7  0.782
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Norton DP, Kelly J, Rairigh R, Hebard AF, Park YD, Zavada JM. Wide bandgap materials for semiconductor spintronics Materials Research Society Symposium - Proceedings. 799: 287-298. DOI: 10.1557/Proc-799-Z9.6  0.753
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Magnetic properties of Mn-implanted AlGaP alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2093-2097. DOI: 10.1116/1.1609473  0.831
2003 Ip K, Frazier RM, Heo YW, Norton DP, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Ferromagnetism in Mn- and Co-implanted ZnO nanorods Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1476-1481. DOI: 10.1116/1.1585069  0.598
2003 Ip K, Frazier RM, Heo YW, Norton DP, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Ferromagnetism in Mn- and Co-implanted ZnO nanorods Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1476. DOI: 10.1116/1.1585069  0.458
2003 Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151  0.731
2003 Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Transition metal ion implantation into AlGaN Journal of Applied Physics. 94: 4956-4960. DOI: 10.1063/1.1613375  0.725
2003 Frazier R, Thaler G, Overberg M, Gila B, Abernathy CR, Pearton SJ. Indication of hysteresis in AlMnN Applied Physics Letters. 83: 1758-1760. DOI: 10.1063/1.1604465  0.826
2003 Frazier RM, Stapleton J, Thaler GT, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Hebard AF, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Zavada JM, Wilson RG. Properties of Co-, Cr-, or Mn-implanted AlN Journal of Applied Physics. 94: 1592-1596. DOI: 10.1063/1.1586987  0.745
2003 Kim J, Ren F, Thaler GT, Frazier R, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Vertical and lateral mobilities in n-(Ga, Mn)N Applied Physics Letters. 82: 1565-1567. DOI: 10.1063/1.1559442  0.72
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic semiconductors based upon AlGaP Journal of Applied Physics. 93: 7861-7863. DOI: 10.1063/1.1556247  0.816
2003 Overberg ME, Thaler GT, Frazier RM, Rairigh R, Kelly J, Abernathy CR, Pearton SJ, Hebard AF, Wilson RG, Zavada JM. Ferromagnetism in Mn- and Cr-implanted AlGaP Solid-State Electronics. 47: 1549-1552. DOI: 10.1016/S0038-1101(03)00098-4  0.822
2003 Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Thaler G, Overberg M, Frazier R, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Solid-State Electronics. 47: 981-987. DOI: 10.1016/S0038-1101(02)00472-0  0.776
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Ren F, Hebard AF, Park YD, Norton DP, Tang W, Stavola M, Zavada JM, Wilson RG. Effects of defects and doping on wide band gap ferromagnetic semiconductors Physica B: Condensed Matter. 340: 39-47. DOI: 10.1016/J.Physb.2003.09.003  0.773
2002 Overberg ME, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, Arnason SB, Hebard AF, Park YD. Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP Materials Research Society Symposium - Proceedings. 690: 9-14. DOI: 10.1557/Proc-690-F1.5  0.828
2002 Polyakov AY, Govorkov AV, Smirnov NB, Pashkova NY, Thaler GT, Overberg ME, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F. Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy Journal of Applied Physics. 92: 4989-4993. DOI: 10.1063/1.1510597  0.794
2002 Thaler GT, Overberg ME, Gila B, Frazier R, Abernathy CR, Pearton SJ, Lee JS, Lee SY, Park YD, Khim ZG, Kim J, Ren F. Magnetic properties of n-GaMnN thin films Applied Physics Letters. 80: 3964-3966. DOI: 10.1063/1.1481533  0.833
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