Year |
Citation |
Score |
2013 |
Wang H, Zepeda-Ruiz LA, Gilmer GH, Upmanyu M. Atomistics of vapour-liquid-solid nanowire growth. Nature Communications. 4: 1956. PMID 23752586 DOI: 10.1038/Ncomms2956 |
0.395 |
|
2011 |
King WE, Tumey SJ, Rest J, Gilmer GH. The effect of lattice and grain boundary diffusion on the redistribution of Xe in metallic nuclear fuels: Implications for the use of ion implantation to study fission-gas-bubble nucleation mechanisms Journal of Nuclear Materials. 415: 38-54. DOI: 10.1016/J.Jnucmat.2011.05.035 |
0.321 |
|
2011 |
King WE, Robel M, Gilmer GH. The potential to use fission gas release experiments to measure lattice and grain boundary diffusion in metallic fuels Journal of Nuclear Materials. 411: 97-111. DOI: 10.1016/J.Jnucmat.2011.01.037 |
0.307 |
|
2011 |
Soules TF, Gilmer GH, Matthews MJ, Stolken JS, Feit MD. Silica Molecular Dynamic Force Fields- A Practical Assessment Journal of Non-Crystalline Solids. 357: 1564-1573. DOI: 10.1016/J.Jnoncrysol.2011.01.009 |
0.318 |
|
2010 |
Zepeda-Ruiz LA, Gilmer GH, Walton CC, Hamza AV, Chason E. Surface morphology evolution during sputter deposition of thin films – lattice Monte Carlo simulations Journal of Crystal Growth. 312: 1183-1187. DOI: 10.1016/J.Jcrysgro.2009.12.035 |
0.355 |
|
2010 |
Donev A, Bulatov VV, Oppelstrup T, Gilmer GH, Sadigh B, Kalos MH. A First-Passage Kinetic Monte Carlo algorithm for complex diffusion-reaction systems Journal of Computational Physics. 229: 3214-3236. DOI: 10.1016/J.Jcp.2009.12.038 |
0.307 |
|
2009 |
Oppelstrup T, Bulatov VV, Donev A, Kalos MH, Gilmer GH, Sadigh B. First-passage kinetic Monte Carlo method. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 80: 066701. PMID 20365296 DOI: 10.1103/Physreve.80.066701 |
0.318 |
|
2009 |
De Yoreo JJ, Zepeda-Ruiz LA, Friddle RW, Qiu SR, Wasylenki LE, Chernov AA, Gilmer GH, Dove PM. Rethinking classical crystal growth models through molecular scale insights: Consequences of kink-limited kinetics Crystal Growth and Design. 9: 5135-5144. DOI: 10.1021/Cg900543G |
0.356 |
|
2008 |
Zepeda-Ruiz LA, Gilmer GH, Maiti A, Gee RH, Burnham AK. Evaporation from the (1 1 0) surface of PETN Journal of Crystal Growth. 310: 3812-3819. DOI: 10.1016/J.Jcrysgro.2008.04.057 |
0.332 |
|
2006 |
Opplestrup T, Bulatov VV, Gilmer GH, Kalos MH, Sadigh B. First-passage Monte Carlo algorithm: diffusion without all the hops. Physical Review Letters. 97: 230602. PMID 17280187 DOI: 10.1103/Physrevlett.97.230602 |
0.347 |
|
2006 |
Zepeda-Ruiz LA, Maiti A, Gee R, Gilmer GH, Weeks BL. Size and habit evolution of PETN crystals—a lattice Monte Carlo study Journal of Crystal Growth. 291: 461-467. DOI: 10.1016/J.Jcrysgro.2006.02.052 |
0.364 |
|
2003 |
Dalla Torre J, Gilmer GH, Windt DL, Kalyanaraman R, Baumann FH, O’Sullivan PL, Sapjeta J, Dı́az de la Rubia T, Djafari Rouhani M. Microstructure of thin tantalum films sputtered onto inclined substrates: Experiments and atomistic simulations Journal of Applied Physics. 94: 263-271. DOI: 10.1063/1.1579112 |
0.341 |
|
2002 |
Rubia TDdl, Gilmer G. Cluster nucleation: Watching nanoclusters nucleate. Nature Materials. 1: 89-90. PMID 12618818 DOI: 10.1038/Nmat743 |
0.308 |
|
2002 |
O'Sullivan PL, Baumann FH, Gilmer GH, Torre JD, Shin CS, Petrov I, Lee T. Continuum model of thin film deposition incorporating finite atomic length scales Journal of Applied Physics. 92: 3487-3494. DOI: 10.1063/1.1497465 |
0.355 |
|
2002 |
Kalyanaraman R, Haynes TE, Holland OW, Gilmer GH. Character of defects at an ion-irradiated buried thin-film interface Journal of Applied Physics. 91: 6325. DOI: 10.1063/1.1470258 |
0.395 |
|
2001 |
Kalyanaraman R, Haynes TE, Holland OW, Gossmann HL, Rafferty CS, Gilmer GH. Binding energy of vacancies to clusters formed in Si by high-energy ion implantation Applied Physics Letters. 79: 1983-1985. DOI: 10.1063/1.1405814 |
0.382 |
|
2000 |
Pinachoa R, Jaraíz M, Gossmann HJ, Gilmer GH, Benton JL, Werner P. The Effect Of Carbon/Self-Interstitial Clusters On Carbon Diffusion In Silicon Modeled By Kinetic Monte Carlo Simulations Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B7.2 |
0.37 |
|
1999 |
Torre JD, Gilmer GH, Windt DL, Baumann FH, Kalyanaraman R, Huang H, Rubia TDdl, Rouhani MD. Growth and Structure of Metallic Barrier Layers and Interconnect Films II: Atomistic Simulations of Film Deposition onto Inclined Surfaces Mrs Proceedings. 562. DOI: 10.1557/Proc-562-129 |
0.327 |
|
1999 |
Pelaz L, Venezia VC, Gossmann H-, Gilmer GH, Fiory AT, Rafferty CS, Jaraiz M, Barbolla J. Activation and deactivation of implanted B in Si Applied Physics Letters. 75: 662-664. DOI: 10.1063/1.124474 |
0.356 |
|
1999 |
Pelaz L, Gilmer GH, Venezia VC, Gossmann H-, Jaraiz M, Barbolla J. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion Applied Physics Letters. 74: 2017-2019. DOI: 10.1063/1.123742 |
0.349 |
|
1999 |
Pelaz L, Gilmer GH, Gossmann H-, Rafferty CS, Jaraiz M, Barbolla J. B cluster formation and dissolution in Si: A scenario based on atomistic modeling Applied Physics Letters. 74: 3657-3659. DOI: 10.1063/1.123213 |
0.336 |
|
1998 |
Herner SB, Gossmann H-, Pelaz LP, Gilmer GH, Jaraı́z M, Jacobson DC, Eaglesham DJ. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model Journal of Applied Physics. 83: 6182-6184. DOI: 10.1063/1.367489 |
0.393 |
|
1998 |
Herner SB, Gossmann H-, Baumann FH, Gilmer GH, Jacobson DC, Jones KS. Capture of vacancies by extrinsic dislocation loops in silicon Applied Physics Letters. 72: 67-69. DOI: 10.1063/1.120646 |
0.322 |
|
1997 |
Stolk PA, Gossmann H-, Eaglesham DJ, Jacobson DC, Rafferty CS, Gilmer GH, Jaraíz M, Poate JM, Luftman HS, Haynes TE. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon Journal of Applied Physics. 81: 6031-6050. DOI: 10.1063/1.364452 |
0.416 |
|
1997 |
Gossmann H-, Haynes TE, Stolk PA, Jacobson DC, Gilmer GH, Poate JM, Luftman HS, Mogi TK, Thompson MO. The interstitial fraction of diffusivity of common dopants in Si Applied Physics Letters. 71: 3862-3864. DOI: 10.1063/1.120527 |
0.405 |
|
1996 |
Jaraiz M, Gilmer GH, Poate JM, Rubia TDdl. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena Applied Physics Letters. 68: 409-411. DOI: 10.1063/1.116701 |
0.457 |
|
1995 |
Gossmann H‐, Gilmer GH, Rafferty CS, Unterwald FC, Boone T, Poate JM, Luftman HS, Frank W. Determination of Si self‐interstitial diffusivities from the oxidation‐enhanced diffusion in B doping‐superlattices: The influence of the marker layers Journal of Applied Physics. 77: 1948-1951. DOI: 10.1063/1.358828 |
0.382 |
|
1993 |
Caturla M-, Rubia TDDL, Gilmer GH. Point defect production, geometry and stability in silicon: A molecular dynamics simulation study Mrs Proceedings. 316. DOI: 10.1557/Proc-316-141 |
0.343 |
|
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