George Hudson Gilmer - Publications

1963 University of Virginia, Charlottesville, VA 
 1971-2000 Bell Laboratories, Murray Hill, NJ, United States 
 2000-2012 Lawrence Livermore National Laboratory, Livermore, CA, United States 
 2012- Colorado School of Mines, Golden, CO, United States 
Atomistic modeling of nanowire formation using vapor/solid and vapor/ liquid/solid crystal growth.

28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Wang H, Zepeda-Ruiz LA, Gilmer GH, Upmanyu M. Atomistics of vapour-liquid-solid nanowire growth. Nature Communications. 4: 1956. PMID 23752586 DOI: 10.1038/Ncomms2956  0.395
2011 King WE, Tumey SJ, Rest J, Gilmer GH. The effect of lattice and grain boundary diffusion on the redistribution of Xe in metallic nuclear fuels: Implications for the use of ion implantation to study fission-gas-bubble nucleation mechanisms Journal of Nuclear Materials. 415: 38-54. DOI: 10.1016/J.Jnucmat.2011.05.035  0.321
2011 King WE, Robel M, Gilmer GH. The potential to use fission gas release experiments to measure lattice and grain boundary diffusion in metallic fuels Journal of Nuclear Materials. 411: 97-111. DOI: 10.1016/J.Jnucmat.2011.01.037  0.307
2011 Soules TF, Gilmer GH, Matthews MJ, Stolken JS, Feit MD. Silica Molecular Dynamic Force Fields- A Practical Assessment Journal of Non-Crystalline Solids. 357: 1564-1573. DOI: 10.1016/J.Jnoncrysol.2011.01.009  0.318
2010 Zepeda-Ruiz LA, Gilmer GH, Walton CC, Hamza AV, Chason E. Surface morphology evolution during sputter deposition of thin films – lattice Monte Carlo simulations Journal of Crystal Growth. 312: 1183-1187. DOI: 10.1016/J.Jcrysgro.2009.12.035  0.355
2010 Donev A, Bulatov VV, Oppelstrup T, Gilmer GH, Sadigh B, Kalos MH. A First-Passage Kinetic Monte Carlo algorithm for complex diffusion-reaction systems Journal of Computational Physics. 229: 3214-3236. DOI: 10.1016/J.Jcp.2009.12.038  0.307
2009 Oppelstrup T, Bulatov VV, Donev A, Kalos MH, Gilmer GH, Sadigh B. First-passage kinetic Monte Carlo method. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 80: 066701. PMID 20365296 DOI: 10.1103/Physreve.80.066701  0.318
2009 De Yoreo JJ, Zepeda-Ruiz LA, Friddle RW, Qiu SR, Wasylenki LE, Chernov AA, Gilmer GH, Dove PM. Rethinking classical crystal growth models through molecular scale insights: Consequences of kink-limited kinetics Crystal Growth and Design. 9: 5135-5144. DOI: 10.1021/Cg900543G  0.356
2008 Zepeda-Ruiz LA, Gilmer GH, Maiti A, Gee RH, Burnham AK. Evaporation from the (1 1 0) surface of PETN Journal of Crystal Growth. 310: 3812-3819. DOI: 10.1016/J.Jcrysgro.2008.04.057  0.332
2006 Opplestrup T, Bulatov VV, Gilmer GH, Kalos MH, Sadigh B. First-passage Monte Carlo algorithm: diffusion without all the hops. Physical Review Letters. 97: 230602. PMID 17280187 DOI: 10.1103/Physrevlett.97.230602  0.347
2006 Zepeda-Ruiz LA, Maiti A, Gee R, Gilmer GH, Weeks BL. Size and habit evolution of PETN crystals—a lattice Monte Carlo study Journal of Crystal Growth. 291: 461-467. DOI: 10.1016/J.Jcrysgro.2006.02.052  0.364
2003 Dalla Torre J, Gilmer GH, Windt DL, Kalyanaraman R, Baumann FH, O’Sullivan PL, Sapjeta J, Dı́az de la Rubia T, Djafari Rouhani M. Microstructure of thin tantalum films sputtered onto inclined substrates: Experiments and atomistic simulations Journal of Applied Physics. 94: 263-271. DOI: 10.1063/1.1579112  0.341
2002 Rubia TDdl, Gilmer G. Cluster nucleation: Watching nanoclusters nucleate. Nature Materials. 1: 89-90. PMID 12618818 DOI: 10.1038/Nmat743  0.308
2002 O'Sullivan PL, Baumann FH, Gilmer GH, Torre JD, Shin CS, Petrov I, Lee T. Continuum model of thin film deposition incorporating finite atomic length scales Journal of Applied Physics. 92: 3487-3494. DOI: 10.1063/1.1497465  0.355
2002 Kalyanaraman R, Haynes TE, Holland OW, Gilmer GH. Character of defects at an ion-irradiated buried thin-film interface Journal of Applied Physics. 91: 6325. DOI: 10.1063/1.1470258  0.395
2001 Kalyanaraman R, Haynes TE, Holland OW, Gossmann HL, Rafferty CS, Gilmer GH. Binding energy of vacancies to clusters formed in Si by high-energy ion implantation Applied Physics Letters. 79: 1983-1985. DOI: 10.1063/1.1405814  0.382
2000 Pinachoa R, Jaraíz M, Gossmann HJ, Gilmer GH, Benton JL, Werner P. The Effect Of Carbon/Self-Interstitial Clusters On Carbon Diffusion In Silicon Modeled By Kinetic Monte Carlo Simulations Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B7.2  0.37
1999 Torre JD, Gilmer GH, Windt DL, Baumann FH, Kalyanaraman R, Huang H, Rubia TDdl, Rouhani MD. Growth and Structure of Metallic Barrier Layers and Interconnect Films II: Atomistic Simulations of Film Deposition onto Inclined Surfaces Mrs Proceedings. 562. DOI: 10.1557/Proc-562-129  0.327
1999 Pelaz L, Venezia VC, Gossmann H-, Gilmer GH, Fiory AT, Rafferty CS, Jaraiz M, Barbolla J. Activation and deactivation of implanted B in Si Applied Physics Letters. 75: 662-664. DOI: 10.1063/1.124474  0.356
1999 Pelaz L, Gilmer GH, Venezia VC, Gossmann H-, Jaraiz M, Barbolla J. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion Applied Physics Letters. 74: 2017-2019. DOI: 10.1063/1.123742  0.349
1999 Pelaz L, Gilmer GH, Gossmann H-, Rafferty CS, Jaraiz M, Barbolla J. B cluster formation and dissolution in Si: A scenario based on atomistic modeling Applied Physics Letters. 74: 3657-3659. DOI: 10.1063/1.123213  0.336
1998 Herner SB, Gossmann H-, Pelaz LP, Gilmer GH, Jaraı́z M, Jacobson DC, Eaglesham DJ. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model Journal of Applied Physics. 83: 6182-6184. DOI: 10.1063/1.367489  0.393
1998 Herner SB, Gossmann H-, Baumann FH, Gilmer GH, Jacobson DC, Jones KS. Capture of vacancies by extrinsic dislocation loops in silicon Applied Physics Letters. 72: 67-69. DOI: 10.1063/1.120646  0.322
1997 Stolk PA, Gossmann H-, Eaglesham DJ, Jacobson DC, Rafferty CS, Gilmer GH, Jaraíz M, Poate JM, Luftman HS, Haynes TE. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon Journal of Applied Physics. 81: 6031-6050. DOI: 10.1063/1.364452  0.416
1997 Gossmann H-, Haynes TE, Stolk PA, Jacobson DC, Gilmer GH, Poate JM, Luftman HS, Mogi TK, Thompson MO. The interstitial fraction of diffusivity of common dopants in Si Applied Physics Letters. 71: 3862-3864. DOI: 10.1063/1.120527  0.405
1996 Jaraiz M, Gilmer GH, Poate JM, Rubia TDdl. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena Applied Physics Letters. 68: 409-411. DOI: 10.1063/1.116701  0.457
1995 Gossmann H‐, Gilmer GH, Rafferty CS, Unterwald FC, Boone T, Poate JM, Luftman HS, Frank W. Determination of Si self‐interstitial diffusivities from the oxidation‐enhanced diffusion in B doping‐superlattices: The influence of the marker layers Journal of Applied Physics. 77: 1948-1951. DOI: 10.1063/1.358828  0.382
1993 Caturla M-, Rubia TDDL, Gilmer GH. Point defect production, geometry and stability in silicon: A molecular dynamics simulation study Mrs Proceedings. 316. DOI: 10.1557/Proc-316-141  0.343
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