| Year |
Citation |
Score |
| 2019 |
Paul DJ, Cleaver JR, Ahmed H, Whall TE. Cotunneling of holes in silicon-based structures. Physical Review. B, Condensed Matter. 49: 16514-16517. PMID 10010803 DOI: 10.1103/Physrevb.49.16514 |
0.359 |
|
| 2019 |
Dzurak AS, Ford CJ, Kelly MJ, Pepper M, Frost JE, Ritchie DA, Jones GA, Ahmed H, Hasko DG. Two-dimensional electron-gas heating and phonon emission by hot ballistic electrons. Physical Review. B, Condensed Matter. 45: 6309-6312. PMID 10000387 DOI: 10.1103/Physrevb.45.6309 |
0.355 |
|
| 2019 |
Matthews P, Kelly MJ, Law VJ, Hasko DG, Pepper M, Stobbs WM, Ahmed H, Peacock DC, Frost JE, Ritchie DA, Jones GA. Electron interactions in the two-dimensional electron-gas base of a vertical hot-electron transistor. Physical Review. B, Condensed Matter. 42: 11415-11418. PMID 9995444 DOI: 10.1103/Physrevb.42.11415 |
0.342 |
|
| 2006 |
Thirion C, Wernsdorfer W, Kläui M, Vaz CAF, Lewis P, Ahmed H, Bland JAC, Mailly D. Anisotropy engineering in Co nanodiscs fabricated using prepatterned silicon pillars Nanotechnology. 17: 1960-1963. DOI: 10.1088/0957-4484/17/8/027 |
0.305 |
|
| 2005 |
Khalafalla MAH, Durrani ZAK, Mizuta H, Ahmed H, Oda S. Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors Thin Solid Films. 487: 255-259. DOI: 10.1016/J.Tsf.2005.01.075 |
0.367 |
|
| 2004 |
Blackburn AM, Hasko DG, Ahmed H, Williams DA. Tungsten pedestal structure for nanotriode devices Journal of Vacuum Science & Technology B. 22: 1298-1302. DOI: 10.1116/1.1722182 |
0.378 |
|
| 2004 |
He J, Durrani ZAK, Ahmed H. Universal three-way few-electron switch using silicon single-electron transistors Applied Physics Letters. 85: 308-310. DOI: 10.1063/1.1772526 |
0.405 |
|
| 2004 |
He J, Durrani ZAK, Ahmed H. Two-way switch for binary decision diagram logic using Silicon single-electron transistors Microelectronic Engineering. 73: 712-718. DOI: 10.1016/J.Mee.2004.03.040 |
0.4 |
|
| 2004 |
Altebaeumer T, Ahmed H. The bi-directional electron pump operated in the double dot regime Microelectronic Engineering. 73: 707-711. DOI: 10.1016/J.Mee.2004.03.039 |
0.391 |
|
| 2004 |
Mizuta H, Furuta Y, Kamiya T, Tan YT, Durrani ZAK, Amakawa S, Nakazato K, Ahmed H. Nanosilicon for single-electron devices Current Applied Physics. 4: 98-101. DOI: 10.1016/J.Cap.2003.10.005 |
0.386 |
|
| 2003 |
Mizuta H, Furuta Y, Kamiya T, Tan Y, Durrani ZAK, Nakazato K, Ahmed H. Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors Solid State Phenomena. 93: 419-428. DOI: 10.4028/Www.Scientific.Net/Ssp.93.419 |
0.478 |
|
| 2003 |
Kamiya T, Furuta Y, Tan Y, Durrani ZAK, Mizuta H, Ahmed H. Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices Solid State Phenomena. 93: 345-350. DOI: 10.4028/Www.Scientific.Net/Ssp.93.345 |
0.461 |
|
| 2003 |
Altebaeumer T, Ahmed H. Tunnel Barrier Formation in Silicon Nanowires Japanese Journal of Applied Physics. 42: 414-417. DOI: 10.1143/Jjap.42.414 |
0.392 |
|
| 2003 |
Kamiya T, Durrani ZAK, Ahmed H, Sameshima T, Furuta Y, Mizuta H, Lloyd N. Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices Journal of Vacuum Science & Technology B. 21: 1000-1003. DOI: 10.1116/1.1570849 |
0.324 |
|
| 2003 |
Lee SB, Teo KBK, Amaratunga GAJ, Milne WI, Chhowalla M, Hasko DG, Ahmed H. Fabrication of multiwalled carbon nanotube bridges by poly-methylmethacrylate suspended dispersion Journal of Vacuum Science & Technology B. 21: 996-999. DOI: 10.1116/1.1570843 |
0.334 |
|
| 2003 |
Teo KBK, Chhowalla M, Amaratunga GAJ, Milne WI, Legagneux P, Pirio G, Gangloff L, Pribat D, Semet V, Binh VT, Bruenger WH, Eichholz J, Hanssen H, Friedrich D, Lee SB, ... ... Ahmed H, et al. Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system Journal of Vacuum Science & Technology B. 21: 693-697. DOI: 10.1116/1.1545755 |
0.411 |
|
| 2003 |
Lee S, Hutchinson GD, Hasko DG, Williams DA, Ahmed H. Digital logic gates using hot-phonon controlled superconducting nanotransistors Ieee Transactions On Applied Superconductivity. 13: 1104-1106. DOI: 10.1109/Tasc.2003.814166 |
0.368 |
|
| 2003 |
Teo KBK, Lee SB, Chhowalla M, Semet V, Binh VT, Groening O, Castignolles M, Loiseau A, Pirio G, Legagneux P, Pribat D, Hasko DG, Ahmed H, Amaratunga GAJ, Milne WI. Plasma enhanced chemical vapour deposition carbon nanotubes/nanofibres - How uniform do they grow? Nanotechnology. 14: 204-211. DOI: 10.1088/0957-4484/14/2/321 |
0.303 |
|
| 2003 |
Lee S, Teh AS, Teo KBK, Chhowalla M, Hasko DG, Milne WI, Amaratunga GAJ, Ahmed H. Fabrication of carbon nanotube lateral field emitters Nanotechnology. 14: 192-195. DOI: 10.1088/0957-4484/14/2/318 |
0.325 |
|
| 2003 |
Lee S, Hutchinson GD, Williams DA, Hasko DG, Ahmed H. Superconducting nanotransistor based digital logic gates Nanotechnology. 14: 188-191. DOI: 10.1088/0957-4484/14/2/317 |
0.366 |
|
| 2003 |
Altebaeumer T, Amakawa S, Ahmed H. Cross-coupling in Coulomb blockade circuits: Bidirectional electron pump Journal of Applied Physics. 94: 3194-3200. DOI: 10.1063/1.1593807 |
0.355 |
|
| 2003 |
Ferguson AJ, Hasko DG, Ahmed H, Williams DA. Variable coupling in n-type silicon-germanium double quantum dots Applied Physics Letters. 82: 4492-4494. DOI: 10.1063/1.1577826 |
0.312 |
|
| 2003 |
Tan YT, Kamiya T, Durrani ZAK, Ahmed H. Room temperature nanocrystalline silicon single-electron transistors Journal of Applied Physics. 94: 633-637. DOI: 10.1063/1.1569994 |
0.438 |
|
| 2003 |
Milne WI, Teo KBK, Chhowalla M, Amaratunga GAJ, Lee SB, Hasko DG, Ahmed H, Groening O, Legagneux P, Gangloff L, Schnell JP, Pirio G, Pribat D, Castignolles M, Loiseau A, et al. Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition Diamond and Related Materials. 12: 422-428. DOI: 10.1016/S0925-9635(02)00292-3 |
0.302 |
|
| 2003 |
Teh AS, Lee S-, Teo KBK, Chhowalla M, Milne WI, Hasko DG, Ahmed H, Amaratunga GAJ. Lateral field emitters fabricated using carbon nanotubes Microelectronic Engineering. 67: 789-796. DOI: 10.1016/S0167-9317(03)00140-0 |
0.33 |
|
| 2002 |
Altebaeumer T, Ahmed H. Performance of Silicon Based Bi-Directional Electron Pumps Consisting of Two Coulomb Blockade Devices Japanese Journal of Applied Physics. 41: 2694-2697. DOI: 10.1143/Jjap.41.2694 |
0.369 |
|
| 2002 |
Lee SB, Teo KBK, Robinson LAW, Teh AS, Chhowalla M, Hasko DG, Amaratunga GAJ, Milne WI, Ahmed H. Characteristics of multiwalled carbon nanotube nanobridges fabricated by poly(methylmethacrylate) suspended dispersion Journal of Vacuum Science & Technology B. 20: 2773-2776. DOI: 10.1116/1.1520569 |
0.33 |
|
| 2002 |
Kamiya T, Durrani ZAK, Ahmed H. Control of grain-boundary tunneling barriers in polycrystalline silicon Applied Physics Letters. 81: 2388-2390. DOI: 10.1063/1.1509853 |
0.302 |
|
| 2002 |
Cain PA, Ahmed H, Williams DA. Hole transport in coupled SiGe quantum dots for quantum computation Journal of Applied Physics. 92: 346-350. DOI: 10.1063/1.1482425 |
0.344 |
|
| 2002 |
Durrani ZAK, Kamiya T, Tan YT, Ahmed H, Lloyd N. Single-electron charging in nanocrystalline silicon point-contacts Microelectronic Engineering. 63: 267-275. DOI: 10.1016/S0167-9317(02)00602-0 |
0.403 |
|
| 2002 |
Ahmed H. Novel nanodevices for electronics: fabrication and characteristics Microelectronic Engineering. 3-4. DOI: 10.1016/S0167-9317(02)00588-9 |
0.429 |
|
| 2002 |
Weaver DJ, Cleaver JRA, Avery L, Ahmed H. Substrate dopant imaging for layout reconstruction of integrated-circuit layers Microelectronic Engineering. 61: 1063-1067. DOI: 10.1016/S0167-9317(02)00583-X |
0.345 |
|
| 2002 |
Altebaeumer T, Ahmed H. The effect of cross-coupling in a bidirectional electron pump Microelectronic Engineering. 61: 549-554. DOI: 10.1016/S0167-9317(02)00475-6 |
0.384 |
|
| 2002 |
Yasin S, Hasko DG, Ahmed H. Comparison of MIBK/IPA and water/IPA as PMMA developers for electron beam nanolithography Microelectronic Engineering. 61: 745-753. DOI: 10.1016/S0167-9317(02)00468-9 |
0.337 |
|
| 2002 |
Lee SB, Teo KBK, Chhowalla M, Hasko DG, Amaratunga GAJ, Milne WI, Ahmed H. Study of multi-walled carbon nanotube structures fabricated by PMMA suspended dispersion Microelectronic Engineering. 61: 475-483. DOI: 10.1016/S0167-9317(02)00436-7 |
0.318 |
|
| 2002 |
Kläui M, Lewis PA, Vaz CAF, Bleloch A, Speaks R, Blamire MC, Bland JAC, Ahmed H. Fabrication and magnetic properties of prepatterned epitaxial nanodots Microelectronic Engineering. 61: 593-600. DOI: 10.1016/S0167-9317(02)00432-X |
0.356 |
|
| 2002 |
Johnson SD, Hasko DG, Teo KBK, Milne WI, Ahmed H. Fabrication of carbon nanotips in a scanning electron microscope for use as electron field emission sources Microelectronic Engineering. 61: 665-670. DOI: 10.1016/S0167-9317(02)00431-8 |
0.315 |
|
| 2002 |
Kamiya T, Tan YT, Durrani ZAK, Ahmed H. Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor Journal of Non-Crystalline Solids. 299302: 405-410. DOI: 10.1016/S0022-3093(01)01180-2 |
0.446 |
|
| 2001 |
Tan YT, Kamiya T, Durrani ZAK, Ahmed H. Optimisation of Tunnel Barriers for nc-Si Single-Electron Transistors The Japan Society of Applied Physics. 2001: 434-435. DOI: 10.7567/Ssdm.2001.P-1-18 |
0.401 |
|
| 2001 |
Altebaeumer T, Ahmed H. Performance of Silicon Based bi-directional Electron Pumps Consisting of Two Coulomb Blockade Devices The Japan Society of Applied Physics. 2001: 566-567. DOI: 10.7567/Ssdm.2001.Lb-2-1-1 |
0.425 |
|
| 2001 |
Kamiya T, Tan YT, Furuta Y, Mizuta H, Durrani ZAK, Ahmed H. Carrier Transport in Ultra-Thin Nano/Polycrystalline Silicon Films and Nanowires Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A16.2 |
0.351 |
|
| 2001 |
Furuta Y, Mizuta H, Nakazato K, Tan YT, Kamiya T, Durrani ZAK, Ahmed H, Taniguchi K. Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon. Japanese Journal of Applied Physics. 40: 615. DOI: 10.1143/Jjap.40.L615 |
0.392 |
|
| 2001 |
Altebaeumer T, Ahmed H. Characteristics of Electron Pump Circuits Using Silicon Multiple Tunnel Junctions Japanese Journal of Applied Physics. 40: 80-82. DOI: 10.1143/Jjap.40.80 |
0.442 |
|
| 2001 |
Evans GJ, Mizuta H, Ahmed H. Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime Japanese Journal of Applied Physics. 40: 5837-5840. DOI: 10.1143/Jjap.40.5837 |
0.439 |
|
| 2001 |
Mizuta H, Müller H, Tsukagoshi K, Williams D, Durrani Z, Irvine A, Evans G, Amakawa S, Nakazato K, Ahmed H. Nanoscale Coulomb blockade memory and logic devices Nanotechnology. 12: 155-159. DOI: 10.1088/0957-4484/12/2/317 |
0.342 |
|
| 2001 |
Kanjanachuchai S, Thornton T, Fernández JM, Ahmed H. Coulomb blockade in strained-Si nanowires on leaky virtual substrates Semiconductor Science and Technology. 16: 72-76. DOI: 10.1088/0268-1242/16/2/303 |
0.409 |
|
| 2001 |
Pooley DM, Ahmed H, Mizuta H, Nakazato K. Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers Journal of Applied Physics. 90: 4772-4776. DOI: 10.1063/1.1405825 |
0.43 |
|
| 2001 |
Lewis PA, Alphenaar BW, Ahmed H. Measurements of geometric enhancement factors for silicon nanopillar cathodes using a scanning tunneling microscope Applied Physics Letters. 79: 1348-1350. DOI: 10.1063/1.1396821 |
0.345 |
|
| 2001 |
Altebaeumer T, Amakawa S, Ahmed H. Characteristics of two Coulomb blockade transistors separated by an island to which an oscillating potential is applied: Theory and experiment Applied Physics Letters. 79: 533-535. DOI: 10.1063/1.1386615 |
0.361 |
|
| 2001 |
Altebaeumer T, Ahmed H. Electrical characteristics of two Coulomb blockade devices driven by a periodically oscillating potential Journal of Applied Physics. 90: 1350-1356. DOI: 10.1063/1.1382850 |
0.389 |
|
| 2001 |
Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N, Humphreys C. Effects of electron-beam exposure on a ruthenium nanocluster polymer Journal of Applied Physics. 90: 947-952. DOI: 10.1063/1.1379780 |
0.36 |
|
| 2001 |
Cain PA, Ahmed H, Williams DA. Conductance peak splitting in hole transport through a SiGe double quantum dot Applied Physics Letters. 78: 3624-3626. DOI: 10.1063/1.1377320 |
0.333 |
|
| 2001 |
Yasin S, Hasko DG, Ahmed H. Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development Applied Physics Letters. 78: 2760-2762. DOI: 10.1063/1.1369615 |
0.318 |
|
| 2001 |
Tan YT, Kamiya T, Durrani ZAK, Ahmed H. Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films Applied Physics Letters. 78: 1083-1085. DOI: 10.1063/1.1350428 |
0.43 |
|
| 2001 |
Tan YT, Durrani ZAK, Ahmed H. Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects Journal of Applied Physics. 89: 1262-1270. DOI: 10.1063/1.1331338 |
0.448 |
|
| 2001 |
Lewis PA, Ahmed H, Alphenaar BW. Colloidal gold natural lithography technique for fabricating GaAs nanopillars Microelectronic Engineering. 57: 925-930. DOI: 10.1016/S0167-9317(01)00473-7 |
0.34 |
|
| 2001 |
Altebaeumer T, Ahmed H. Silicon nanowires and their application in bi-directional electron pumps Microelectronic Engineering. 1029-1033. DOI: 10.1016/S0167-9317(01)00434-8 |
0.452 |
|
| 2001 |
Lee S-, Hasko DG, Ahmed H. Fabrication of a self-aligned superconducting nanotransistor based NOR logic gate Microelectronic Engineering. 57: 981-987. DOI: 10.1016/S0167-9317(01)00426-9 |
0.361 |
|
| 2000 |
Lewis PA, Alphenaar BW, Ahmed H. UHV-STM Study of Electron Emission from Individual Silicon Nanopillars The Japan Society of Applied Physics. 2000: 330-331. DOI: 10.7567/Ssdm.2000.D-5-4 |
0.377 |
|
| 2000 |
Pooley DM, Ahmed H, Mizuta H, Nakazato K. Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers The Japan Society of Applied Physics. 2000: 126-127. DOI: 10.7567/Ssdm.2000.D-2-8 |
0.407 |
|
| 2000 |
Altebaeumer T, Ahmed H. Characteristic of Electron Pumps Based on Silicon Coulomb Blockade Devices The Japan Society of Applied Physics. 2000: 218-219. DOI: 10.7567/Ssdm.2000.B-3-6 |
0.431 |
|
| 2000 |
Driskill-Smith AAG, Hasko DG, Ahmed H. Quantum interference in a vacuum nanotriode Journal of Vacuum Science & Technology B. 18: 3481-3487. DOI: 10.1116/1.1314388 |
0.38 |
|
| 2000 |
Durrani ZAK, Irvine AC, Ahmed H. Coulomb blockade memory using integrated single-electron transistor/metal-oxide-semiconductor transistor gain cells Ieee Transactions On Electron Devices. 47: 2334-2339. DOI: 10.1109/16.887016 |
0.363 |
|
| 2000 |
Irvine AC, Durrani ZAK, Ahmed H. A high-speed silicon-based few-electron memory with metal– oxide–semiconductor field-effect transistor gain element Journal of Applied Physics. 87: 8594-8603. DOI: 10.1063/1.373584 |
0.393 |
|
| 2000 |
Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Zhou W. Electron-beam-induced conduction in a ruthenium carbonyl nanoparticle polymer Applied Physics Letters. 76: 1773-1775. DOI: 10.1063/1.126163 |
0.378 |
|
| 2000 |
Weaver DJ, Cleaver JRA, Avery L, Ahmed H. Multilayer integrated-circuit imaging with contrast enhancement in a large-area, high-resolution electron-beam system Microelectronic Engineering. 53: 641-644. DOI: 10.1016/S0167-9317(00)00395-6 |
0.337 |
|
| 2000 |
Yasin S, Mumtaz A, Hasko DG, Carecenac F, Ahmed H. Characterisation of the ultrasonic development process in UVIII resist Microelectronic Engineering. 53: 471-474. DOI: 10.1016/S0167-9317(00)00358-0 |
0.339 |
|
| 2000 |
Driskill-Smith AAG, Hasko DG, Ahmed H. Fabrication and characterization of vacuum nanoelectronic devices Microelectronic Engineering. 53: 179-182. DOI: 10.1016/S0167-9317(00)00291-4 |
0.384 |
|
| 1999 |
Irvine AC, Durrani ZAK, Ahmed H. A High-Speed, Silicon-Based Few-Electron Memory Gain Cell The Japan Society of Applied Physics. 1999: 72-73. DOI: 10.7567/Ssdm.1999.D-1-3 |
0.344 |
|
| 1999 |
Pooley DM, Ahmed H, Lloyd NS. Fabrication and electron transport in multilayer silicon-insulator-silicon nanopillars Journal of Vacuum Science & Technology B. 17: 3235-3238. DOI: 10.1116/1.591136 |
0.446 |
|
| 1999 |
Lewis PA, Ahmed H. Patterning of silicon nanopillars formed with a colloidal gold etch mask Journal of Vacuum Science & Technology B. 17: 3239-3243. DOI: 10.1116/1.590988 |
0.363 |
|
| 1999 |
Stone NJ, Ahmed H, Nakazato K. A high-speed silicon single-electron random access memory Ieee Electron Device Letters. 20: 583-585. DOI: 10.1109/55.798051 |
0.386 |
|
| 1999 |
Kanjanachuchai S, Bonar JM, Ahmed H. Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator Semiconductor Science and Technology. 14: 1065-1068. DOI: 10.1088/0268-1242/14/12/309 |
0.325 |
|
| 1999 |
Driskill-Smith AAG, Hasko DG, Ahmed H. The Nanotriode: A Nanoscale Field-Emission Tube Applied Physics Letters. 75: 2845-2847. DOI: 10.1063/1.125169 |
0.396 |
|
| 1999 |
Pooley DM, Ahmed H, Mizuta H, Nakazato K. Coulomb blockade in silicon nano-pillars Applied Physics Letters. 74: 2191-2193. DOI: 10.1063/1.123797 |
0.352 |
|
| 1999 |
Durrani ZAK, Irvine AC, Ahmed H, Nakazato K. A memory cell with single-electron and metal-oxide-semiconductor transistor integration Applied Physics Letters. 74: 1293-1295. DOI: 10.1063/1.123528 |
0.385 |
|
| 1999 |
Nakazato K, Itoh K, Mizuta H, Ahmed H. Silicon stacked tunnel transistor for highspeed and high-density random access memory gain cells Electronics Letters. 35: 848-850. DOI: 10.1049/El:19990574 |
0.334 |
|
| 1999 |
Müller HO, Williams DA, Mizuta H, Durrani ZAK, Irvine AC, Ahmed H. Simulation of Si multiple tunnel junctions Physica B: Condensed Matter. 272: 85-87. DOI: 10.1016/S0921-4526(99)00349-X |
0.328 |
|
| 1999 |
Hori M, Goto T, Woodham RG, Ahmed H. Control over size and density of sub-5nm gold dots by retarding-field single ion deposition (RSID) Microelectronic Engineering. 47: 401-403. DOI: 10.1016/S0167-9317(99)00244-0 |
0.371 |
|
| 1999 |
Kanjanachuchai S, Bonar JM, Parker GJ, Ahmed H. Single-hole tunnelling in SiGe nanostructures Microelectronic Engineering. 46: 137-140. DOI: 10.1016/S0167-9317(99)00037-4 |
0.31 |
|
| 1998 |
Durrani ZAK, Irvine AC, Ahmed H, Biesemans S. Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations The Japan Society of Applied Physics. 1998: 210-211. DOI: 10.7567/Ssdm.1998.C-5-6 |
0.424 |
|
| 1998 |
Rogne H, Ahmed H. Emissivity Of Coated Silicon At Elevated Temperatures Mrs Proceedings. 525: 27. DOI: 10.1557/Proc-525-27 |
0.321 |
|
| 1998 |
Lewis PA, Ahmed H, Sato T. Silicon nanopillars formed with gold colloidal particle masking Journal of Vacuum Science & Technology B. 16: 2938-2941. DOI: 10.1116/1.590322 |
0.313 |
|
| 1998 |
Kanjanachuchai S, Thornton T, Fernández JM, Ahmed H. Leakage currents in virtual substrates: measurements and device implications Semiconductor Science and Technology. 13: 1215-1218. DOI: 10.1088/0268-1242/13/10/026 |
0.335 |
|
| 1998 |
Hori M, Woodham RG, Ahmed H. Sub-5 nm gold dot formation using retarding-field single ion deposition Applied Physics Letters. 73: 3223-3225. DOI: 10.1063/1.122725 |
0.373 |
|
| 1998 |
Irvine AC, Durrani ZAK, Ahmed H, Biesemans S. Single-electron effects in heavily doped polycrystalline silicon nanowires Applied Physics Letters. 73: 1113-1115. DOI: 10.1063/1.122101 |
0.446 |
|
| 1998 |
Stone NJ, Ahmed H. Silicon single-electron memory structure Microelectronic Engineering. 41: 511-514. DOI: 10.1016/S0167-9317(98)00119-1 |
0.368 |
|
| 1998 |
Thomas MDR, Hasko DG, Ahmed H, Brown DB, Johnson BFG. Electron-beam exposure characteristics of a novel Ru-PMMA composite resist Microelectronic Engineering. 327-330. DOI: 10.1016/S0167-9317(98)00075-6 |
0.324 |
|
| 1998 |
Ahmed H. Single electronics with metallic and semiconducting nanostructures Microelectronic Engineering. 41: 15. DOI: 10.1016/S0167-9317(98)00005-7 |
0.342 |
|
| 1997 |
Sato T, Ahmed H, Brown D, Johnson BFG. Dithiol-Linked Gold Colloidal Particles Used for Fabricating Single Electron Transistors The Japan Society of Applied Physics. 1997: 498-499. DOI: 10.7567/Ssdm.1997.B-14-6 |
0.355 |
|
| 1997 |
Driskill-Smith AAG, Hasko DG, Ahmed H. Fabrication and behavior of nanoscale field emission structures Journal of Vacuum Science & Technology B. 15: 2773-2776. DOI: 10.1116/1.589725 |
0.355 |
|
| 1997 |
Ahmed H. Single electron electronics: Challenge for nanofabrication Journal of Vacuum Science & Technology B. 15: 2101-2108. DOI: 10.1116/1.589228 |
0.453 |
|
| 1997 |
Ahmed MM, Ahmed H, Ladbrooke PH. An improved DC model for circuit analysis programs for submicron GaAs MESFET's Ieee Transactions On Electron Devices. 44: 360-363. DOI: 10.1109/16.556144 |
0.312 |
|
| 1997 |
Tsukagoshi K, Nakazato K, Ahmed H, Gamo K. Electron pump in multiple-tunnel junctions Physical Review B. 56: 3972-3975. DOI: 10.1103/Physrevb.56.3972 |
0.388 |
|
| 1997 |
Adeyeye AO, Bland JAC, Daboo C, Hasko DG, Ahmed H. Optimized process for the fabrication of mesoscopic magnetic structures Journal of Applied Physics. 82: 469-473. DOI: 10.1063/1.365840 |
0.376 |
|
| 1997 |
Sato T, Ahmed H, Brown D, Johnson BFG. Single electron transistor using a molecularly linked gold colloidal particle chain Journal of Applied Physics. 82: 696-701. DOI: 10.1063/1.365600 |
0.308 |
|
| 1997 |
Driskill-Smith AAG, Hasko DG, Ahmed H. Nanoscale field emission structures for ultra-low voltage operation at atmospheric pressure Applied Physics Letters. 71: 3159-3161. DOI: 10.1063/1.120276 |
0.344 |
|
| 1996 |
Hornsey RI, Marsh AM, Cleaver JR, Ahmed H. Erratum: High-current ballistic transport through variable-width constrictions in a high-mobility two-dimensional electron gas Physical Review. B, Condensed Matter. 54: 8261. PMID 9984510 DOI: 10.1103/Physrevb.54.8261 |
0.34 |
|
| 1996 |
Matsuoka H, Ahmed H. Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers Japanese Journal of Applied Physics. 35. DOI: 10.1143/Jjap.35.L418 |
0.367 |
|
| 1996 |
Woodham RG, Ahmed H. Single atom lithography and its applications Japanese Journal of Applied Physics. 35: 6683-6688. DOI: 10.1143/Jjap.35.6683 |
0.35 |
|
| 1996 |
Hoyle PC, Cleaver JRA, Ahmed H. Electron beam induced deposition from W(CO)6 at 2 to 20 keV and its applications Journal of Vacuum Science & Technology B. 14: 662-673. DOI: 10.1116/1.589154 |
0.352 |
|
| 1996 |
Rogne H, Timans PJ, Ahmed H. Infrared Absorption In Silicon At Elevated Temperatures Applied Physics Letters. 69: 2190-2192. DOI: 10.1063/1.117161 |
0.336 |
|
| 1996 |
Ahmed H. Single atom scale lithography for single electron devices Physica B-Condensed Matter. 227: 259-263. DOI: 10.1016/0921-4526(96)00415-2 |
0.392 |
|
| 1996 |
Ahmed H, Nakazato K. Single-electron devices Microelectronic Engineering. 32: 297-315. DOI: 10.1016/0167-9317(95)00179-4 |
0.463 |
|
| 1996 |
Williams DA, Marsh AM, Ahmed H. Transport through superconductor — semiconductor junctions in different scattering limits Surface Science. 324-327. DOI: 10.1016/0039-6028(96)00413-X |
0.348 |
|
| 1995 |
Hornsey RI, Marsh AM, Cleaver JR, Ahmed H. High-current ballistic transport through variable-width constrictions in a high-mobility two-dimensional electron gas. Physical Review. B, Condensed Matter. 51: 7010-7016. PMID 9977258 DOI: 10.1103/Physrevb.51.7010 |
0.34 |
|
| 1995 |
Nakazato K, Ahmed H. The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits Japanese Journal of Applied Physics. 34: 700-706. DOI: 10.1143/Jjap.34.700 |
0.402 |
|
| 1995 |
Langheinrich W, Ahmed H. Fabrication of Lateral Tunnel Junctions and Measurement of Coulomb Blockade Effects Japanese Journal of Applied Physics. 34: 6956-6960. DOI: 10.1143/Jjap.34.6956 |
0.415 |
|
| 1995 |
Wakaya F, Otoi H, Yanagisawa J, Yuba Y, Takaoka S, Murase K, Gamo K, Hasko DG, Jones GAC, Ahmed H. Transport Properties and Fabrication of Coupled Electron Waveguides Japanese Journal of Applied Physics. 34: 4446-4448. DOI: 10.1143/Jjap.34.4446 |
0.385 |
|
| 1995 |
Takahara J, Nomura A, Gamo K, Takaoka S, Murase K, Ahmed H. Magnetotransport in Hexagonal and Rectangular Antidot Lattices Japanese Journal of Applied Physics. 34: 4325-4328. DOI: 10.1143/Jjap.34.4325 |
0.302 |
|
| 1995 |
Chen W, Ahmed H. Fabrication and physics of 2 nm islands for single electron devices Journal of Vacuum Science & Technology B. 13: 2883-2887. DOI: 10.1116/1.588310 |
0.464 |
|
| 1995 |
Ahmed MM, Ahmed H, Ladbrooke PH. Effects of interface states on submicron GaAs metal-semiconductor field-effect transistors assessed by gate leakage current Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1519-1525. DOI: 10.1116/1.588180 |
0.355 |
|
| 1995 |
Marsh AM, Williams DA, Ahmed H. Granular superconducting contacts to GaAs:AlGaAs semiconductor heterostructures Semiconductor Science and Technology. 10: 1694-1699. DOI: 10.1088/0268-1242/10/12/021 |
0.382 |
|
| 1995 |
Blaikie RJ, Cumming DRS, Cleaver JRA, Ahmed H, Nakazato K. Electron transport in multiprobe quantum wires anomalous magnetoresistance effects Journal of Applied Physics. 78: 330-343. DOI: 10.1063/1.360680 |
0.303 |
|
| 1995 |
Nakazato K, Ahmed H. Enhancement of Coulomb blockade in semiconductor tunnel junctions Applied Physics Letters. 66: 3170-3172. DOI: 10.1063/1.113712 |
0.415 |
|
| 1995 |
Hoyle PC, Cleaver JRA, Ahmed H. Fabrication of free-standing microtransducers in GaAs with an electron-beam-induced oxide mask and Cl2 etching Sensors and Actuators a-Physical. 50: 31-37. DOI: 10.1016/0924-4247(96)80082-3 |
0.408 |
|
| 1994 |
Nakazato K, Ahmed H. The Multiple-Tunnel Junction (MTJ) and its Application to Single-Electron Memory and Logic The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1994.S-Iii-2 |
0.339 |
|
| 1994 |
Hussain T, Cleaver JRA, Ahmed H. Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile. Japanese Journal of Applied Physics. 33: 2087-2091. DOI: 10.1143/Jjap.33.2087 |
0.374 |
|
| 1994 |
Hussain T, Cleaver JRA, Ahmed H. Fabrication and performance of GaAs metal–semiconductor field effect transistors with step‐graded striped focused ion beam doping in the channel regions Journal of Vacuum Science & Technology B. 12: 158-160. DOI: 10.1116/1.587175 |
0.374 |
|
| 1994 |
Goodings CJ, Mizuta H, Cleaver JRA, Ahmed H. Variable‐area resonant tunneling diodes using implanted in‐plane gates Journal of Applied Physics. 76: 1276-1286. DOI: 10.1063/1.357787 |
0.375 |
|
| 1994 |
Shearwood C, Blundell SJ, Baird MJ, Bland JAC, Gester M, Ahmed H, Hughes HP. Magnetoresistance and magnetization in submicron ferromagnetic gratings Journal of Applied Physics. 75: 5249-5256. DOI: 10.1063/1.355723 |
0.309 |
|
| 1994 |
Hoyle PC, Cleaver JRA, Ahmed H. Ultralow‐energy focused electron beam induced deposition Applied Physics Letters. 64: 1448-1450. DOI: 10.1063/1.111912 |
0.37 |
|
| 1994 |
Blaikie RJ, Nakazato K, Oakeshott RBS, Cleaver JRA, Ahmed H. Lateral resonant tunneling through constrictions in a δ ‐doped GaAs layer Applied Physics Letters. 64: 118-120. DOI: 10.1063/1.110897 |
0.348 |
|
| 1994 |
Gajda MA, Ahmed H, Dodgson J. CMOS-compatible silicon devices on thin SiO2 membranes Electronics Letters. 30: 28-30. DOI: 10.1049/El:19940046 |
0.329 |
|
| 1994 |
Marsh AM, Williams DA, Ahmed H. Multiple Andreev reflection in buried heterostructure—alloy superconductor devices Physica B-Condensed Matter. 203: 307-309. DOI: 10.1016/0921-4526(94)90074-4 |
0.361 |
|
| 1994 |
Goodings CJ, Mizuta H, Cleaver JRA, Ahmed H. Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates Surface Science. 305: 363-368. DOI: 10.1016/0039-6028(94)90917-2 |
0.375 |
|
| 1994 |
Warris J, Suleman M, Mahmood F, Ahmed H. Kinetics of the formation of cobalt disilicide at high temperature under rapid electron beam heating Journal of Materials Science Letters. 13: 96-98. DOI: 10.1007/Bf00416811 |
0.365 |
|
| 1993 |
Hornsey RI, Cleaver JR, Ahmed H. Transverse hot-electron focusing. Physical Review. B, Condensed Matter. 48: 14679-14682. PMID 10007897 DOI: 10.1103/Physrevb.48.14679 |
0.369 |
|
| 1993 |
Chen W, Ahmed H. Fabrication of sub‐10 nm structures by lift‐off and by etching after electron‐beam exposure of poly(methylmethacrylate) resist on solid substrates Journal of Vacuum Science & Technology B. 11: 2519-2523. DOI: 10.1116/1.586658 |
0.39 |
|
| 1993 |
Hornsey RI, Cleaver JRA, Ahmed H. Fabrication of mesoscopic structures by channeled ion implantation for the study of boundary scattering of electrons Journal of Vacuum Science & Technology B. 11: 2579-2583. DOI: 10.1116/1.586628 |
0.329 |
|
| 1993 |
Hornsey RI, Thornton TJ, Cleaver JRA, Ahmed H. Investigation of mesoscopic structures fabricated by channeled Si++ion implantation of deep heterostructures Journal of Applied Physics. 73: 3203-3210. DOI: 10.1063/1.352964 |
0.403 |
|
| 1993 |
England JMC, Timans PJ, Hill C, Augustus PD, Ahmed H. The dynamics of amorphous‐to‐crystalline interface evolution in ion‐implanted polycrystalline silicon Journal of Applied Physics. 73: 4332-4343. DOI: 10.1063/1.352817 |
0.385 |
|
| 1993 |
Paul DJ, Cleaver JRA, Ahmed H, Whall TE. Coulomb blockade in silicon based structures at temperatures up to 50 K Applied Physics Letters. 63: 631-632. DOI: 10.1063/1.109972 |
0.335 |
|
| 1993 |
Chen W, Ahmed H. Fabrication of high aspect ratio silicon pillars of <10 nm diameter Applied Physics Letters. 63: 1116-1118. DOI: 10.1063/1.109798 |
0.416 |
|
| 1993 |
Chen W, Ahmed H. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist Applied Physics Letters. 62: 1499-1501. DOI: 10.1063/1.109609 |
0.387 |
|
| 1993 |
Hasko DG, Cleaver JRA, Ahmed H, Smith CG, Dixon JE. Hopping conduction in a free‐standing GaAs‐AlGaAs heterostructure wire Applied Physics Letters. 62: 2533-2535. DOI: 10.1063/1.109287 |
0.4 |
|
| 1993 |
Hoyle PC, Ogasawara M, Cleaver JRA, Ahmed H. Electrical resistance of electron beam induced deposits from tungsten hexacarbonyl Applied Physics Letters. 62: 3043-3045. DOI: 10.1063/1.109133 |
0.398 |
|
| 1993 |
Cumming DRS, Blaikie RJ, Ahmed H. Negative longitudinal resistance in a mesoscopic wire Applied Physics Letters. 62: 870-872. DOI: 10.1063/1.108550 |
0.371 |
|
| 1993 |
Nakazato K, Blaikie RJ, Cleaver JRA, Ahmed H. Single-electron memory Electronics Letters. 29: 384-385. DOI: 10.1049/El:19930258 |
0.323 |
|
| 1993 |
Shearwood C, Ahmed H, Nicholson LM, Bland JAC, Baird MJ, Patel M, Hughes HP. Fabrication and magnetisation measurements of variable-pitch gratings of cobalt on GaAs Microelectronic Engineering. 21: 431-434. DOI: 10.1016/0167-9317(93)90106-F |
0.426 |
|
| 1992 |
Blaikie RJ, Nakazato K, Cleaver JRA, Ahmed H. Enhancement of resistance anomalies by diffuse boundary scattering in multiprobe ballistic conductors. Physical Review B. 46: 9796-9799. PMID 10002797 DOI: 10.1103/Physrevb.46.9796 |
0.307 |
|
| 1992 |
Woodham RG, Cleaver JRA, Ahmed H, Ladbrooke PH. T‐gate, Γ‐gate, and air‐bridge fabrication for monolithic microwave integrated circuits by mixed ion‐beam, high‐voltage electron‐beam, and optical lithography Journal of Vacuum Science & Technology B. 10: 2927-2931. DOI: 10.1116/1.586337 |
0.445 |
|
| 1992 |
Smith CG, Chen W, Pepper M, Ahmed H, Hasko D, Ritchie DA, Frost JEF, Jones GAC. Fabrication and physics of lateral superlattices with 40 nm pitch on high‐mobility GaAs GaAlAs heterostructures Journal of Vacuum Science & Technology B. 10: 2904-2908. DOI: 10.1116/1.585985 |
0.453 |
|
| 1992 |
Mahmood F, Ahmed H, Suleman M, Raman VK. Interaction of titanium with single crystal silicon during rapid electron beam heating Journal of Vacuum Science & Technology B. 10: 1181-1186. DOI: 10.1116/1.585883 |
0.39 |
|
| 1992 |
Hopper A, Jones A, Augur RA, Fice MJ, Blythe S, Ahmed H. A Feasibility Study for the Fabrication of Planar Silicon Multichip Modules Using Electron Beam Lithography for Precise Location and Interconnection of Chips Ieee Transactions On Components, Hybrids, and Manufacturing Technology. 15: 97-102. DOI: 10.1109/33.124197 |
0.405 |
|
| 1992 |
Matthews P, Kelly MJ, Hasko DG, Frost JEF, Ritchie DA, Jones GAC, Pepper M, Ahmed H. The physics of the two-dimensional electron gas base vertical hot electron transistor Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/140 |
0.441 |
|
| 1992 |
Potts A, Kelly MJ, Hasko DG, Cleaver JRA, Ahmed H, Ritchie DA, Frost JEF, Jones GAC. Lattice heating of free-standing ultra-fine GaAs wires by hot electrons Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/055 |
0.381 |
|
| 1992 |
Kelly MJ, Potts A, Hamilton A, Tewordt M, Pepper M, Law VJ, Frost JEF, Ritchie DA, Jones GAC, Hasko DG, Ahmed H. Quasi-one-dimensional transport in semiconductor microstructures Physica Scripta. 45: 200-205. DOI: 10.1088/0031-8949/1992/T45/042 |
0.422 |
|
| 1992 |
Wilkinson RJ, Ager CD, Duffield T, Hughes HP, Hasko DG, Ahmed H, Frost JEF, Peacock DC, Ritchie DA, Jones GAC, Whitehouse CR, Apsley N. Plasmon excitation and self‐coupling in a bi‐periodically modulated two‐dimensional electron gas Journal of Applied Physics. 71: 6049-6061. DOI: 10.1063/1.350462 |
0.306 |
|
| 1992 |
Nakazato K, Thornton TJ, White J, Ahmed H. Single‐electron effects in a point contact using side‐gating in delta‐doped layers Applied Physics Letters. 61: 3145-3147. DOI: 10.1063/1.107988 |
0.328 |
|
| 1992 |
Blaikie RJ, Cleaver JRA, Ahmed H, Nakazato K. Variable width and electron density quantum wires in GaAs/AlGaAs with ion-implanted gates and a surface Schottky gate Applied Physics Letters. 60: 1618-1620. DOI: 10.1063/1.107481 |
0.4 |
|
| 1992 |
Cumming DRS, Ahmed H, Thornton T. Anomalous magnetoresistance at a mesoscopic bend Applied Physics Letters. 60: 2755-2757. DOI: 10.1063/1.106867 |
0.368 |
|
| 1992 |
Hamilton AR, Frost JEF, Smith CG, Kelly MJ, Linfield EH, Ford CJB, Ritchie DA, Jones GAC, Pepper M, Hasko DG, Ahmed H. Back-gated split-gate transistor : a one-dimensional ballistic channel with variable Fermi energy Applied Physics Letters. 60: 2782-2784. DOI: 10.1063/1.106849 |
0.354 |
|
| 1992 |
Nakazato K, Hornsey RI, Blaikie RJ, Cleaver JRA, Ahmed H, Thornton TJ. Electron focusing with a double grid in AlGaAs/GaAs heterostructures Applied Physics Letters. 60: 1093-1095. DOI: 10.1063/1.106454 |
0.374 |
|
| 1992 |
Goodings CJ, Cleaver JRA, Ahmed H. Variable-area resonant tunnelling diodes using implanted gates Electronics Letters. 28: 1535-1537. DOI: 10.1049/El:19920975 |
0.333 |
|
| 1992 |
Srinivas TAS, Timans PJ, Butcher RJ, Ahmed H. A free-standing microthermopile infrared detector Sensors and Actuators a-Physical. 32: 403-406. DOI: 10.1016/0924-4247(92)80020-4 |
0.346 |
|
| 1992 |
Woodham RG, Jones RM, Hasko DG, Cleaver JRA, Ahmed H. T-gate and airbridge fabrication for MMICs by combining multi-voltage electron-beam lithography and ion-beam lithography Microelectronic Engineering. 17: 563-566. DOI: 10.1016/0167-9317(92)90116-9 |
0.444 |
|
| 1992 |
Hornsey RI, Nakazato K, Cleaver JRA, Ahmed H. Masked ion beam damage isolation for microstructure delineation Microelectronic Engineering. 17: 431-434. DOI: 10.1016/0167-9317(92)90088-9 |
0.414 |
|
| 1992 |
Matthews P, Kelly MJ, Hasko DG, Ahmed H, Frost JEF, Ritchie DA, Jones GAC. Interactions between hot injected electrons and the cold electrons in the two-dimensional electron gas base of a vertical hot electron transistor Surface Science. 263: 141-146. DOI: 10.1016/0039-6028(92)90324-Y |
0.41 |
|
| 1991 |
Mahmood F, Ahmed H, Suleman M, Ahmed MM. Measurement of the activation energy of tantalum silicide growth on silicon by rapid electron beam annealing Japanese Journal of Applied Physics. 30: L1418-L1421. DOI: 10.1143/Jjap.30.L1418 |
0.412 |
|
| 1991 |
Huq SE, Hasko DG, Blamire MG, Ahmed H, Evetts JE. Fabrication of Sub-Micron Whole-Wafer Sis Tunnel Junctions for Millimeter Wave Mixers Ieee Transactions On Magnetics. 27: 3161-3164. DOI: 10.1109/20.133882 |
0.385 |
|
| 1991 |
Greene SK, Pepper M, Peacock DC, Ritchie DA, Law VJ, Newbury R, Frost JEF, Jones GAC, Brown RJ, Ahmed H, Hasko D. Quantum interference and Landau level broadening in narrow GaAs-AlGaAs channels Journal of Physics: Condensed Matter. 3: 1003-1010. DOI: 10.1088/0953-8984/3/8/013 |
0.316 |
|
| 1991 |
Greene SK, Pepper M, Wharam DA, Peacock DC, Ritchie DA, Frost JEF, Hasko DG, Ahmed H, Jones GAC. Transmission coefficients and Hall resistance in a small cross-shaped semiconductor junction Journal of Physics: Condensed Matter. 3: 1961-1965. DOI: 10.1088/0953-8984/3/12/028 |
0.314 |
|
| 1991 |
Potts A, Kelly MJ, Hasko DG, Smith CG, Cleaver JRA, Ahmed H, Peacock DC, Frost JEF, Ritchie DA, Jones GAC, Singleton J, Janssen TJBM. Thermal transport in free-standing semiconductor fine wires Superlattices and Microstructures. 9: 315-318. DOI: 10.1016/0749-6036(91)90250-U |
0.321 |
|
| 1991 |
Blaikie RJ, Nakazato K, Cleaver JRA, Ahmed H, Fraboni B. Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates Microelectronic Engineering. 13: 373-376. DOI: 10.1016/0167-9317(91)90114-S |
0.439 |
|
| 1990 |
Young RJ, Kirk ECG, Williams DA, Ahmed H. Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam Mrs Proceedings. 199: 205. DOI: 10.1557/Proc-199-205 |
0.313 |
|
| 1990 |
Potts A, Williams DA, Young RJ, Blaikie RJ, McMahon RA, Hasko DG, Cleaver JRA, Ahmed H. Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems Japanese Journal of Applied Physics. 29: 2675-2679. DOI: 10.1143/Jjap.29.2675 |
0.465 |
|
| 1990 |
Mahmood F, Cheema OS, Williams DA, McMahon RA, Ahmed H, Suleman M. Rapid electron beam annealing of tantalum films on silicon Journal of Vacuum Science & Technology B. 8: 630-634. DOI: 10.1116/1.585030 |
0.434 |
|
| 1990 |
Brown RJ, Pepper M, Ahmed H, Hasko DG, Ritchie DA, Frost JEF, Peacock DC, Jones GAC. Differential negative resistance in a one-dimensional mesoscopic system due to single-electron tunnelling Journal of Physics: Condensed Matter. 2: 2105-2109. DOI: 10.1088/0953-8984/2/8/017 |
0.419 |
|
| 1990 |
Potts A, Kelly MJ, Smith CG, Hasko DG, Cleaver JRA, Ahmed H, Peacock DC, Ritchie DA, Frost JEF, Jones GAC. Electron heating effects in free-standing single-crystal GaAs fine wires Journal of Physics: Condensed Matter. 2: 1817-1825. DOI: 10.1088/0953-8984/2/7/012 |
0.378 |
|
| 1990 |
Potts A, Hasko DG, Cleaver JRA, Smith CG, Ahmed H, Kelly MJ, Frost JEF, Jones GAC, Peacock DC, Ritchie DA. Quantum conductivity corrections in free-standing and supported n+-GaAs wires Journal of Physics: Condensed Matter. 2: 1807-1815. DOI: 10.1088/0953-8984/2/7/011 |
0.378 |
|
| 1990 |
Smith CG, Pepper M, Newbury R, Ahmed H, Hasko DG, Peacock DC, Frost JEF, Ritchie DA, Jones GAC, Hill G. Transport in a superlattice of 1D ballistic channels Journal of Physics: Condensed Matter. 2: 3405-3414. DOI: 10.1088/0953-8984/2/14/025 |
0.375 |
|
| 1990 |
Pepper M, Smith CG, Brown RJ, Wharam DA, Kelly MJ, Newbury R, Ahmed H, Hasko DG, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. One-dimensional ballistic transport of electrons Semiconductor Science and Technology. 5: 1185-1188. DOI: 10.1088/0268-1242/5/12/007 |
0.385 |
|
| 1990 |
Matthews P, Kelly MJ, Law VJ, Hasko DG, Pepper M, Ahmed H, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. Two-dimensional electron gas base hot electron transistor Electronics Letters. 26: 862-864. DOI: 10.1049/El:19900565 |
0.381 |
|
| 1990 |
Kelly MJ, Brown RJ, Pepper M, Hasko DG, Ahmed H, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. Room temperature negative differential resistance in the quasi-one-dimensional ballistic resistor Electronics Letters. 26: 171-173. DOI: 10.1049/El:19900116 |
0.324 |
|
| 1990 |
Pepper M, Brown RJ, Smith CG, Wharam DA, Kelly MJ, Newbury R, Ahmed H, Hasko DG, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. One-dimensional transport phenomena in GaAs heterojunction structures Physica a-Statistical Mechanics and Its Applications. 168: 112-120. DOI: 10.1016/0378-4371(90)90362-V |
0.35 |
|
| 1990 |
Young RJ, Cleaver JRA, Ahmed H. Gas-assisted focused ion beam etching for microfabrication and inspection Microelectronic Engineering. 11: 409-412. DOI: 10.1016/0167-9317(90)90140-O |
0.34 |
|
| 1990 |
Huq SE, Chen ZW, McMahon RA, Jones GAC, Ahmed H. Fabrication of 25nm wide gold lines using nanometer scale lithography and ionized cluster beam deposition Microelectronic Engineering. 11: 343-346. DOI: 10.1016/0167-9317(90)90126-E |
0.359 |
|
| 1990 |
Kirk ECG, Hasko DG, Blamire MG, Evetts JE, Ahmed H. Fabrication routes for sub-micron whole-wafer Nb/Al2O3/Nb tunnel junctions Microelectronic Engineering. 11: 109-112. DOI: 10.1016/0167-9317(90)90083-6 |
0.351 |
|
| 1990 |
Hasko DG, Srinivas TAS, Cleaver JRA, Ahmed H. Design and fabrication of a microminiature thermocouple array for far-infrared radiation detection Microelectronic Engineering. 11: 83-86. DOI: 10.1016/0167-9317(90)90077-7 |
0.324 |
|
| 1990 |
Brown RJ, Smith CG, Pepper M, Kelly MJ, Newbury R, Hasko DG, Ahmed H, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. Electronic transport in ballistic structures Microelectronic Engineering. 11: 35-38. DOI: 10.1016/0167-9317(90)90068-5 |
0.345 |
|
| 1990 |
Potts A, Kelly MJ, Hasko DG, Smith CG, Cleaver JRA, Ahmed H, Peacock DC, Ritchie DA, Frost JEF, Jones GAC. Thermal transport in free-standing single-crystal GaAs wires Microelectronic Engineering. 11: 15-18. DOI: 10.1016/0167-9317(90)90063-Y |
0.355 |
|
| 1990 |
Wharam D, Newbury R, Pepper M, Hasko D, Ahmed H, Frost J, Ritchie D, Peacock D, Jones G, Thornton T, Ekenberg U. Ballistic electron transport in quasi-one-dimensional systems Surface Science. 229: 233-238. DOI: 10.1016/0039-6028(90)90878-C |
0.397 |
|
| 1990 |
Smith CG, Pepper M, Ahmed H, Frost JEF, Hasko DG, Newbury R, Peacock DC, Ritchie DA, Jones GAC. One dimensional electron tunneling and related phenomena Surface Science. 228: 387-392. DOI: 10.1016/0039-6028(90)90334-5 |
0.366 |
|
| 1989 |
Wharam DA, Ekenberg U, Pepper M, Hasko DG, Ahmed H, Frost JEF, Ritchie DA, Peacock DC, Jones GAC. Empirical relation between gate voltage and electrostatic potential in the one-dimensional electron gas of a split-gate device. Physical Review B. 39: 6283-6286. PMID 9949069 DOI: 10.1103/Physrevb.39.6283 |
0.348 |
|
| 1989 |
England JMC, Timans PJ, Mcmahon RA, Ahmed H, Hill C, Augustus PD, Boys DR. Kinetics and Microstructure of Transiently Annealed Implanted Polycrystalline Silicon Layers Mrs Proceedings. 157: 647. DOI: 10.1557/Proc-157-647 |
0.303 |
|
| 1989 |
Smith CG, Pepper M, Ahmed H, Frost JEF, Hasko DG, Newbury R, Peacock DC, Ritchie DA, Jones GAC. Fabry-Perot interferometry with electron waves Journal of Physics: Condensed Matter. 1: 9035-9044. DOI: 10.1088/0953-8984/1/45/026 |
0.36 |
|
| 1989 |
Smith CG, Pepper M, Newbury R, Ahmed H, Hasko DG, Peacock DC, Frost JEF, Ritchie DA, Jones GAC, Hill G. One-dimensional quantised ballistic resistors in parallel configuration Journal of Physics: Condensed Matter. 1: 6763-6770. DOI: 10.1088/0953-8984/1/37/022 |
0.318 |
|
| 1989 |
Brown RJ, Smith CG, Pepper M, Kelly MJ, Newbury R, Ahmed H, Hasko DG, Frost JEF, Peacock DC, Ritchie DA, Jones GAC. Resonant magneto-transport through a lateral quantum box in a semiconductor heterostructure Journal of Physics: Condensed Matter. 1: 6291-6298. DOI: 10.1088/0953-8984/1/35/026 |
0.315 |
|
| 1989 |
Brown RJ, Kelly MJ, Pepper M, Ahmed H, Hasko DG, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. Electronic instabilities in the hot-electron regime of the one-dimensional ballistic resistor Journal of Physics: Condensed Matter. 1: 6285-6290. DOI: 10.1088/0953-8984/1/35/025 |
0.409 |
|
| 1989 |
Wharam DA, Pepper M, Newbury R, Ahmed H, Hasko DG, Peacock DC, Frost JEF, Ritchie DA, Jones GAC. Observation of Aharonov-Bohm oscillations in a narrow two-dimensional electron gas Journal of Physics: Condensed Matter. 1: 3369-3373. DOI: 10.1088/0953-8984/1/21/008 |
0.33 |
|
| 1989 |
Mahmood F, Raman VK, McMahon RA, Ahmed H, Jeynes C, Sarkar D. The reaction of ion-beam mixed titanium layers on silicon induced by electron beam heating Semiconductor Science and Technology. 4: 897-903. DOI: 10.1088/0268-1242/4/11/001 |
0.373 |
|
| 1989 |
Peacock DC, Ritchie DA, Frost JEF, Linfield EH, Davies AG, Smith C, Wharam DA, Ford CJB, Thornton T, Newbury R, Hasko DG, Ahmed H, Jones GAC, Pepper M. The Growth and Physics of MBE Structures Physica Scripta. 1989: 141-146. DOI: 10.1088/0031-8949/1989/T29/026 |
0.391 |
|
| 1989 |
Timans PJ, McMahon RA, Ahmed H, Hopper GF. Temperature distributions and molten zones induced by heating with line‐shaped electron beams Journal of Applied Physics. 66: 2285-2296. DOI: 10.1063/1.344285 |
0.327 |
|
| 1989 |
Williams DA, McMahon RA, Ahmed H, Garry G, Karapiperis L, Dieumegard D. Selective epitaxial growth in silicon on insulator: Planarity and mass flow Journal of Applied Physics. 65: 3718-3721. DOI: 10.1063/1.342602 |
0.346 |
|
| 1989 |
Ford CJB, Thornton TJ, Newbury R, Pepper M, Ahmed H, Peacock DC, Ritchie DA, Frost JEF, Jones GAC. Electrostatically defined heterojunction rings and the Aharonov–Bohm effect Applied Physics Letters. 54: 21-23. DOI: 10.1063/1.100818 |
0.338 |
|
| 1989 |
Williams D, McMahon R, Ahmed H. A study of growth defects in seeded and unseeded silicon on insulator layers Materials Science and Engineering: B. 4: 423-427. DOI: 10.1016/0921-5107(89)90281-X |
0.398 |
|
| 1989 |
Smith CG, Pepper M, Ahmed H, Frost JE, Hasko DG, Peacock DC, Ritchie DA, Jones GAC. Quantum ballistic transport through a zero-dimensional structure Superlattices and Microstructures. 5: 599-602. DOI: 10.1016/0749-6036(89)90394-7 |
0.423 |
|
| 1989 |
Williams D, McMahon R, Ahmed H. Seed window defects in silicon on insulator material Applied Surface Science. 36: 614-622. DOI: 10.1016/0169-4332(89)90957-4 |
0.367 |
|
| 1989 |
Wharam DA, Hasko DG, Pepper M, Ahmed H, Frost JEF, Peacock DC, Ritchie DA, Jones GAC. Physics and fabrication of one-dimensional sub-micron semiconducting channels Microelectronic Engineering. 9: 369-372. DOI: 10.1016/0167-9317(89)90081-6 |
0.362 |
|
| 1989 |
Hasko DG, Smith CG, Lucek JK, Cleaver JRA, Ahmed H. Fabrication and electrical, mechanical and thermal properties of sub-micron free-standing devices Microelectronic Engineering. 9: 337-340. DOI: 10.1016/0167-9317(89)90073-7 |
0.322 |
|
| 1989 |
Ahmed H. In-situ processing of semiconductors by combining MBE, lithography, pattern transfer, implantation and annealing Microelectronic Engineering. 9: 313-320. DOI: 10.1016/0167-9317(89)90070-1 |
0.389 |
|
| 1989 |
Brown RJ, Kelly MJ, Newbury R, Pepper M, Miller B, Ahmed H, Hasko DG, Peacock DC, Ritchie DA, Frost JEF, Jones GAC. The one dimensional quantised ballistic resistance in GaAs/AlGaAs heterojunctions with varying experimental conditions Solid-State Electronics. 32: 1179-1183. DOI: 10.1016/0038-1101(89)90210-4 |
0.379 |
|
| 1988 |
Ford CJ, Thornton TJ, Newbury R, Pepper M, Ahmed H, Peacock DC, Ritchie DA, Frost JE, Jones GA. Vanishing Hall voltage in a quasi-one-dimensional GaAs-AlxGa1-xAs heterojunction. Physical Review. B, Condensed Matter. 38: 8518-8521. PMID 9945624 DOI: 10.1103/Physrevb.38.8518 |
0.328 |
|
| 1988 |
van Houten H, Beenakker CW, van Loosdrecht PH, Thornton TJ, Ahmed H, Pepper M, Foxon CT, Harris JJ. Four-terminal magnetoresistance of a two-dimensional electron-gas constriction in the ballistic regime. Physical Review. B, Condensed Matter. 37: 8534-8536. PMID 9944213 DOI: 10.1103/Physrevb.37.8534 |
0.376 |
|
| 1988 |
Raman VK, Mahmood F, McMahon RA, Ahmed H, Jeynes C. Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon Japanese Journal of Applied Physics. 27: 2333-2339. DOI: 10.1143/Jjap.27.2333 |
0.39 |
|
| 1988 |
Cleaver JRA, Kirk ECG, Young RJ, Ahmed H. Scanning ion beam techniques for the examination of microelectronic devices Journal of Vacuum Science & Technology B. 6: 1026-1029. DOI: 10.1116/1.584341 |
0.372 |
|
| 1988 |
Hasko DG, Potts A, Cleaver JRA, Smith CG, Ahmed H. Fabrication of submicrometer freestanding single‐crystal gallium arsenide and silicon structures for quantum transport studies Journal of Vacuum Science & Technology B. 6: 1849-1851. DOI: 10.1116/1.584184 |
0.378 |
|
| 1988 |
Evason AF, Cleaver JRA, Ahmed H. Focused ion implantation of gallium arsenide metal–semiconductor field effect transistors with laterally graded doping profiles Journal of Vacuum Science & Technology B. 6: 1832-1835. DOI: 10.1116/1.584175 |
0.365 |
|
| 1988 |
Kirk ECG, McMahon RA, Cleaver JRA, Ahmed H. Scanning ion microscopy and microsectioning of electron beam recrystallized silicon on insulator devices Journal of Vacuum Science & Technology B. 6: 1940-1943. DOI: 10.1116/1.584137 |
0.445 |
|
| 1988 |
Evason AF, Cleaver JRA, Ahmed H. Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation Ieee Electron Device Letters. 9: 281-283. DOI: 10.1109/55.717 |
0.387 |
|
| 1988 |
Smith CG, Pepper M, Ahmed H, Frost JEF, Hasko DG, Peacock DC, Ritchie DA, Jones GAC. The transition from one- to zero-dimensional ballistic transport Journal of Physics C: Solid State Physics. 21. DOI: 10.1088/0022-3719/21/24/003 |
0.331 |
|
| 1988 |
Wharam DA, Pepper M, Ahmed H, Frost JEF, Hasko DG, Peacock DC, Ritchie DA, Jones GAC. Addition of the one-dimensional quantised ballistic resistance Journal of Physics C: Solid State Physics. 21. DOI: 10.1088/0022-3719/21/24/002 |
0.312 |
|
| 1988 |
Ford CJB, Thornton TJ, Newbury R, Pepper M, Ahmed H, Foxon CT, Harris JJ, Roberts C. Journal of Physics C: Solid State Physics. 21: L325-L331. DOI: 10.1088/0022-3719/21/10/005 |
0.352 |
|
| 1988 |
Potts A, Hasko DG, Cleaver JRA, Ahmed H. Fabrication of free-standing single-crystal silicon wires Applied Physics Letters. 52: 834-835. DOI: 10.1063/1.99299 |
0.437 |
|
| 1988 |
Smith DA, McMahon RA, Ahmed H, Barfoot KM, Peters TB, Hopper GF, Godfrey DJ. Scanning electron microscopy study of seeded recrystallization of silicon‐on‐insulator layers with either polycrystalline or epitaxially deposited silicon in the seed windows Journal of Applied Physics. 63: 1438-1441. DOI: 10.1063/1.339923 |
0.398 |
|
| 1988 |
Timans PJ, McMahon RA, Ahmed H. Time‐resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon‐on‐insulator films Applied Physics Letters. 53: 1844-1846. DOI: 10.1063/1.100372 |
0.364 |
|
| 1988 |
Ford CJB, Thornton T, Newbury R, Pepper M, Ahmed H, Davies GJ, Andrews D. Transport in GaAs heterojunction ring structures Superlattices and Microstructures. 4: 541-544. DOI: 10.1016/0749-6036(88)90233-9 |
0.4 |
|
| 1988 |
Huq SE, McMahon RA, Ahmed H. An investigation of thin gold films deposited by ionized cluster beams Thin Solid Films. 163: 337-342. DOI: 10.1016/0040-6090(88)90445-2 |
0.321 |
|
| 1988 |
Franklin RE, Kirk ECG, Cleaver JRA, Ahmed H. Channelling ion image contrast and sputtering in gold specimens observed in a high-resolution scanning ion microscope Journal of Materials Science Letters. 7: 39-41. DOI: 10.1007/Bf01729909 |
0.309 |
|
| 1987 |
Thornton TJ, Pepper M, Ahmed H, Davies GJ, Andrews D. Universal conductance fluctuations and electron coherence lengths in a narrow two-dimensional electron gas. Physical Review. B, Condensed Matter. 36: 4514-4517. PMID 9943451 DOI: 10.1103/Physrevb.36.4514 |
0.374 |
|
| 1987 |
Williams DA, McMahon RA, Ahmed H, Barfoot KM, Godfrey DJ, Dunne B, Mathewson A. TEM and SEM Studies of Multiple Silicon on Insulator Films for Three Dimensional Circuits. Mrs Proceedings. 107. DOI: 10.1557/Proc-107-235 |
0.323 |
|
| 1987 |
Smith CG, Ahmed H, Wybourne MN. Fabrication and phonon transport studies in nanometer scale free‐standing wires Journal of Vacuum Science & Technology B. 5: 314-317. DOI: 10.1116/1.583891 |
0.388 |
|
| 1987 |
Jones GAC, Blythe S, Ahmed H. Very high voltage (500 kV) electron beam lithography for thick resists and high resolution Journal of Vacuum Science & Technology B. 5: 120-123. DOI: 10.1116/1.583844 |
0.43 |
|
| 1987 |
Yallup KJ, Godfrey DJ, McMahon RA, Ahmed H. Rapid isothermal processing with electron beams of small-geometry CMOS devices Ieee Transactions On Electron Devices. 34: 1688-1693. DOI: 10.1109/T-Ed.1987.23138 |
0.44 |
|
| 1987 |
Armistead CJ, Butler BR, Clements SJ, Collar AJ, Moule DJ, Wheeler SA, Fice MJ, Ahmed H. DFB ridge waveguide lasers at λ = 1.5 μm with first-order gratings fabricated using electron beam lithography Electronics Letters. 23: 592-593. DOI: 10.1049/El:19870425 |
0.391 |
|
| 1987 |
Fice MJ, Ahmed H, Clements S. Fabrication of first-order gratings for 1.5 μm DFB lasers by high-voltage electron-beam lithography Electronics Letters. 23: 590-592. DOI: 10.1049/El:19870424 |
0.413 |
|
| 1987 |
Kirk ECG, Cleaver JRA, Ahmed H. Observation of voltage contrast in scanning ion microscopy of integrated circuits Electronics Letters. 23: 585-586. DOI: 10.1049/El:19870420 |
0.33 |
|
| 1987 |
Ford CJB, Ahmed H. Fabrication of GaAs heterojunction ring structures Microelectronic Engineering. 6: 169-174. DOI: 10.1016/0167-9317(87)90033-5 |
0.43 |
|
| 1987 |
Norris TS, Jones GAC, Ahmed H. Electron energy spread in high-voltage variable shape E-beam lithography systems Microelectronic Engineering. 6: 99-104. DOI: 10.1016/0167-9317(87)90022-0 |
0.367 |
|
| 1986 |
Thornton TJ, Pepper M, Ahmed H, Andrews D, Davies GJ. One-dimensional conduction in the two-dimensional electron gas in a GaAs-AlGaAs heterojunction. Physical Review Letters. 56: 1198-1201. PMID 10032595 DOI: 10.1103/Physrevlett.56.1198 |
0.353 |
|
| 1986 |
McInerney J, Fice M, Ahmed H. Formation of microgratings for III-V semiconductor integrated optoelectronics by high-voltage electron-beam lithography Journal of Lightwave Technology. 4: 1494-1501. DOI: 10.1109/Jlt.1986.1074657 |
0.433 |
|
| 1986 |
Cleaver JRA, Heard PJ, Evason AF, Ahmed H. Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching Applied Physics Letters. 49: 654-656. DOI: 10.1063/1.97070 |
0.356 |
|
| 1986 |
McMillan GB, Shannon JM, Clegg JB, Ahmed H. Characterization of shallow (Rp <20 nm) As- and B-implanted and electron-beam annealed silicon Journal of Applied Physics. 59: 2694-2703. DOI: 10.1063/1.336977 |
0.398 |
|
| 1986 |
Thornton T, Pepper M, Ahmed H, Andrews D, Davies GJ. Electron transport across depleted region of a fine-gate GaAs:AlGaAs heterojunction FET Electronics Letters. 22: 247-249. DOI: 10.1049/El:19860170 |
0.424 |
|
| 1986 |
Jones GAC, Blythe S, Ahmed H. Direct fabrication of nanometre-scale structures in semiconductors with 500 keV lithography Microelectronic Engineering. 5: 265-271. DOI: 10.1016/0167-9317(86)90053-5 |
0.399 |
|
| 1986 |
Reich DF, Fray DJ, Evason AF, Cleaver JR, Ahmed H. Metallurgy and microfabrication applications of gold-silicon-beryllium liquid-metal field-ion sources Microelectronic Engineering. 5: 171-178. DOI: 10.1016/0167-9317(86)90044-4 |
0.321 |
|
| 1985 |
Williams DA, Mcmahon RA, Hasko DG, Ahmed H, Hopper GF, Godfrey DJ. A Study of Melting and Resolidification of Silicon-on-Insulator Structures Formed by Lateral Epitaxy Mrs Proceedings. 53: 15. DOI: 10.1557/Proc-53-15 |
0.333 |
|
| 1985 |
Cowern NEB, Yallup KJ, Godfrey DJ, Hasko DG, McMahon RA, Ahmed H, Stobbs WM, McPhail DS. Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon Mrs Proceedings. 52: 65. DOI: 10.1557/Proc-52-65 |
0.322 |
|
| 1985 |
Timans PJ, McMahon RA, Ahmed H. Regrowth Rates of Amorphous Layers in Silicon-on-Sapphire Films Mrs Proceedings. 52: 123. DOI: 10.1557/Proc-52-123 |
0.364 |
|
| 1985 |
Timans PJ, McMahon RA, Ahmed H. Time Resolved Reflectivity Measurements Applied to Rapid Isothermal Annealing of Ion Implanted Silicon Mrs Proceedings. 45: 337. DOI: 10.1557/Proc-45-337 |
0.338 |
|
| 1985 |
Augur RA, Jones GAC, Ahmed H. Modeling and exposure of three‐dimensional shaped beam profiles in electron resist Journal of Vacuum Science & Technology B. 3: 429-433. DOI: 10.1116/1.583281 |
0.374 |
|
| 1985 |
Jones GAC, Sargent PM, Norris TS, Ahmed H. High‐voltage shaped e‐beam lithography Journal of Vacuum Science & Technology B. 3: 124-127. DOI: 10.1116/1.583193 |
0.393 |
|
| 1985 |
Peters TB, Pitt MB, McMahon RA, Hasko DG, Ahmed H. Performance of CMOS devices in silicon-on-sapphire films after solid-phase epitaxial growth with rapid electron-beam heating Ieee Electron Device Letters. 6: 482-484. DOI: 10.1109/Edl.1985.26200 |
0.402 |
|
| 1985 |
Cleaver JRA, Ahmed H, Heard PJ, Prewett PD, Dunn GJ, Kaufmann H. Focused ion beam repair techniques for clear and opaque defects in masks Microelectronic Engineering. 3: 253-260. DOI: 10.1016/0167-9317(85)90034-6 |
0.31 |
|
| 1985 |
Norris TS, Jones GAC, Ahmed H. Fabrication of high aspect ratio submicron structures by variable-shape electron lithography Microelectronic Engineering. 3: 85-92. DOI: 10.1016/0167-9317(85)90013-9 |
0.412 |
|
| 1984 |
Godfrey DJ, McMahon RA, Hasko DG, Ahmed H, Dowsett MG. Annealing and Diffusion of Boron in Self-Implanted Silicon by Furnace and Electron Beam Heating Mrs Proceedings. 36: 143. DOI: 10.1557/Proc-36-143 |
0.392 |
|
| 1984 |
Mcmahon RA, Hasko DG, Ahmed H, Stobbs WM, Godfrey DJ. A Comparison of Millisecond Annealing of B Implants and Isothermal Annealing for Times of a Few Seconds Mrs Proceedings. 35: 347. DOI: 10.1557/Proc-35-347 |
0.328 |
|
| 1984 |
Heard PJ, Cleaver JRA, Ahmed H. APPLICATION OF A FOCUSED ION BEAM SYSTEM TO DEFECT REPAIR OF VLSI MASKS Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena. 3: 87-90. DOI: 10.1116/1.583297 |
0.324 |
|
| 1984 |
McMillan GB, Shannon JM, Ahmed H. Annealing of Shallow (Rp 20-nm) Boron-Implanted Layers in Silicon Using Electron Beams Ieee Electron Device Letters. 5: 280-282. DOI: 10.1109/Edl.1984.25917 |
0.428 |
|
| 1984 |
McMillan GB, Smith DJ, Gowers JP, Ahmed H. Transmission electron microscopy and high resolution electron microscopy studies of shallow (Rp∼20 nm) As and B implanted and electron beam annealed silicon Applied Physics Letters. 44: 1081-1083. DOI: 10.1063/1.94651 |
0.44 |
|
| 1984 |
Smith DJ, Freeman LA, McMahon RA, Ahmed H, Pitt MG, Peters TB. Characterization of Si-implanted and electron-beam-annealed silicon-on-sapphire using high-resolution electron microscopy Journal of Applied Physics. 56: 2207-2212. DOI: 10.1063/1.334279 |
0.415 |
|
| 1984 |
McMillan GB, Shannon JM, Ahmed H. Processing of unipolar diodes with electron beams Electronics Letters. 20: 863-865. DOI: 10.1049/El:19840586 |
0.427 |
|
| 1984 |
Hopper GF, Davis JR, McMahon RA, Ahmed H. Silicon-on-insulator CMOS transistors in dual electron beam recrystallised polysilicon Electronics Letters. 20: 500-501. DOI: 10.1049/El:19840347 |
0.469 |
|
| 1984 |
Lee KL, Ahmed H, Kelly MJ, Wybourne MN. Fabrication of ultra-thin free-standing wires of silicon nitride Electronics Letters. 20: 289-291. DOI: 10.1049/El:19840198 |
0.338 |
|
| 1984 |
McMahon RA, Ahmed H, Godfrey DJ, Pitt MG. Application of electron beams in thermal processing of semiconductor materials and devices Microelectronics Journal. 15: 5-23. DOI: 10.1016/S0026-2692(84)80029-4 |
0.454 |
|
| 1983 |
McMahon RA, Ahmed H, Godfrey D, Yallup KJ. Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices Ieee Transactions On Electron Devices. 30: 1550-1555. DOI: 10.1109/T-Ed.1983.21336 |
0.414 |
|
| 1983 |
Davis JR, McMahon RA, Ahmed H. Techniques For Producing Defect-Free Soi By Dual Electron Beam Heating Of Deposited Polysilicon Le Journal De Physique Colloques. 44. DOI: 10.1051/Jphyscol:1983550 |
0.387 |
|
| 1983 |
Godfrey DJ, McMahon RA, Ahmed H, Dowsett M. Highly Controlled Diffusion Of Ion-Implanted Arsenic By Multiple Scan Electron-Beam Heating Le Journal De Physique Colloques. 44. DOI: 10.1051/Jphyscol:1983536 |
0.357 |
|
| 1982 |
Davis JR, Mcmahon RA, Ahmed H. Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing Mrs Proceedings. 13. DOI: 10.1557/Proc-13-563 |
0.398 |
|
| 1982 |
Mcmillan GB, Shannon JM, Ahmed H. Processing Of Shallow (Rp<150Å) Implanted Layers With Electron Beams Mrs Proceedings. 13: 437. DOI: 10.1557/Proc-13-437 |
0.367 |
|
| 1982 |
Ahmed H, Catto CJD, Cleaver JRA, Kanitkar PL, Smith D. A versatile test rig for the evaluation of thermionic electron guns Journal of Physics E: Scientific Instruments. 15: 1351-1355. DOI: 10.1088/0022-3735/15/12/020 |
0.373 |
|
| 1982 |
Davis JR, McMahon RA, Ahmed H. Recrystallisation of CVD poly-Si on insulator by dual electron-beam processing Electronics Letters. 18: 163-164. DOI: 10.1049/El:19820112 |
0.414 |
|
| 1982 |
Smith DJ, Camps RA, Cosslett VE, Freeman LA, Saxton WO, Nixon WC, Ahmed H, Catto CJD, Cleaver JRA, Smith KCA, Timbs AE. Optimisation and applications of the Cambridge University 600 kV high resolution electron microscope Ultramicroscopy. 9: 203-213. DOI: 10.1016/0304-3991(82)90201-7 |
0.345 |
|
| 1981 |
McMahon RA, Davis JR, Ahmed H. Dual Electron Beam Processing System for Semiconductor Materials Mrs Proceedings. 4: 783. DOI: 10.1557/Proc-4-783 |
0.382 |
|
| 1980 |
Speight JD, Glaccum AE, Machin D, Mcmahon RA, Ahmed H. Scanning E-Beam Annealing of Mos Devices Mrs Proceedings. 1: 383. DOI: 10.1557/Proc-1-383 |
0.38 |
|
| 1980 |
Shah NJ, Mcmahon RA, Williams JGS, Ahmed H. Multiple-Scan E-Beam Method Applied to a Range of Semiconducting Materials Mrs Proceedings. 1: 201. DOI: 10.1557/Proc-1-201 |
0.311 |
|
| 1980 |
Shah NJ, Ahmed H, Sanders IR, Singleton JF. Activation of low dose silicon implants in GaAs by multiply scanned electron beams Electronics Letters. 16: 433-434. DOI: 10.1049/El:19800302 |
0.412 |
|
| 1980 |
McMahon RA, Ahmed H, Dobson RM, Speight JD. Characterisation of multiple-scan electron beam annealing method Electronics Letters. 16: 295-297. DOI: 10.1049/El:19800215 |
0.394 |
|
| 1979 |
McMahon RA, Ahmed H, Speight JD, Dobson RM. Scanning-electron-beam annealing of ion-implanted p-n junction diodes Electronics Letters. 15: 433-435. DOI: 10.1049/El:19790311 |
0.419 |
|
| 1979 |
McMahon RA, Ahmed H. Electron-beam annealing of ion-implanted silicon Electronics Letters. 15: 45-47. DOI: 10.1049/El:19790032 |
0.395 |
|
| 1979 |
Cosslett VE, Camps RA, Saxton WO, Smith DJ, Nixon WC, Ahmed H, Catto CJD, Cleaver JRA, Smith KCA, Timbs AE, Turner PW, Ross PM. Atomic resolution with a 600-kV electron microscope [3] Nature. 281: 49-51. DOI: 10.1038/281049A0 |
0.365 |
|
| 1978 |
Phang JCH, Ahmed H. Line width control in electron-beam lithography Electronics Letters. 14: 382-384. DOI: 10.1049/El:19780258 |
0.335 |
|
| 1976 |
Ahmed H, Hoare RD. New method of registration for electron-beam lithography Electronics Letters. 12: 28-29. DOI: 10.1049/El:19760021 |
0.365 |
|
| 1975 |
Jones GAC, Ahmed H, Nixon WC. Electron optical system for microfabrication with 10 000 lines per field Electronics Letters. 11: 214-216. DOI: 10.1049/El:19750164 |
0.362 |
|
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