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Brian D. Thoms, Ph.D. - Publications

Affiliations: 
Physics Cornell University, Ithaca, NY, United States 
Area:
Surface Science
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Acharya AR, Thoms BD, Nepal N, Eddy CR. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4901873  0.683
2013 Acharya AR, Gamage S, Senevirathna MKI, Alevli M, Bahadir K, Melton AG, Ferguson I, Dietz N, Thoms BD. Thermal stability of InN epilayers grown by high pressure chemical vapor deposition Applied Surface Science. 268: 1-5. DOI: 10.1016/J.Apsusc.2012.10.184  0.597
2012 Acharya AR, Thoms BD. Compositional, Structural, and Optical Characterizations of In1-XGaxN Epilayers Grown by High Pressure Chemical Vapor Deposition The Himalayan Physics. 3: 6-9. DOI: 10.3126/Hj.V3I0.7267  0.413
2011 Acharya AR, Thoms BD. Study of InN surface by high resolution electron energy loss spectroscopy (HREELS ) The Himalayan Physics. 2: 35-37. DOI: 10.3126/Hj.V2I2.5208  0.619
2011 Acharya AR, Buegler M, Atalay R, Dietz N, Thoms BD, Tweedie JS, Collazo R. Observation of NH2 species on tilted InN (01 1̄ 1) facets Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3596619  0.666
2008 Bhatta RP, Thoms BD, Alevli M, Dietz N. Desorption of hydrogen from InN(0 0 0 over(1, ̄)) observed by HREELS Surface Science. 602: 1428-1432. DOI: 10.1016/J.Susc.2008.02.003  0.737
2007 Bhatta RP, Thoms BD, Weerasekera A, Perera AGU, Alevli M, Dietz N. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 967-970. DOI: 10.1116/1.2712185  0.757
2007 Bhatta RP, Thoms BD, Alevli M, Dietz N. Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Surface Science. 601: L120-L123. DOI: 10.1016/J.Susc.2007.07.018  0.757
2006 Bhatta RP, Thoms BD, Alevli M, Woods V, Dietz N. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition Applied Physics Letters. 88. DOI: 10.1063/1.2187513  0.754
2003 Eddy CR, Leonhardt D, Shamamian VA, Butler JE, Thoms BD. Mass spectrometry sampling method for characterizing high-density plasma etching mechanisms Applied Physics Letters. 82: 3626-3628. DOI: 10.1063/1.1577831  0.339
2002 Yang Y, Lee J, Thoms BD. Electron stimulated desorption of deuterium from GaN (0001) surface Materials Research Society Symposium - Proceedings. 743: 737-742. DOI: 10.1557/Proc-743-L11.30  0.512
2002 Yang Y, Lee J, Thoms BD, Koleske DD, Henry RL. Thermal desorption of deuterium from GaN(0001) Materials Research Society Symposium - Proceedings. 693: 443-448. DOI: 10.1557/Proc-693-I6.48.1  0.381
2000 Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL. Extremely efficient electron stimulated desorption of hydrogen from GaN(0001) Materials Science Forum. 338: II/-. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1537  0.419
2000 Yang Y, Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL. Adsorption and desorption of hydrogen on Ga-rich GaN(0001) Materials Science Forum. 338: II/-. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1533  0.317
1999 Eddy CR, Leonhardt D, Douglass SR, Shamamian VA, Thoms BD, Butler JE. Characterization of high density CH4/H2/Ar plasmas for compound semiconductor etching Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 780-792. DOI: 10.1116/1.581695  0.357
1999 Eddy CR, Leonhardt D, Douglass SR, Thoms BD, Shamamian VA, Butler JE. Characterization of Cl2/Ar high density plasmas for semiconductor etching Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 38-51. DOI: 10.1116/1.581543  0.384
1999 Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL. Efficient electron-stimulated desorption of hydrogen from GaN(0001) Physical Review B - Condensed Matter and Materials Physics. 60: 4821-4825. DOI: 10.1103/Physrevb.60.4821  0.418
1999 Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL. Electronic structure of H/GaN(0001): An EELS study of Ga-H formation Physical Review B - Condensed Matter and Materials Physics. 60: 4816-4820. DOI: 10.1103/Physrevb.60.4816  0.319
1999 Bellitto VJ, Yang Y, Thoms BD, Koleske DD, Wickenden AE, Henry RL. Desorption of hydrogen from GaN(0001) observed by HREELS and ELS Surface Science. 442: L1019-L1023. DOI: 10.1016/S0039-6028(99)00973-5  0.6
1999 Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL. HREELS of H/GaN(0001): evidence for Ga termination Surface Science. 430: 80-88. DOI: 10.1016/S0039-6028(99)00403-3  0.581
1998 Leonhardt D, Eddy CR, Shamamian VA, Holm RT, Glembocki OJ, Thoms BD, Katzer DS, Butler JE. Ion energy effects on surface chemistry and damage in a high density plasma etch process for gallium arsenide Japanese Journal of Applied Physics, Part 2: Letters. 37: L577-L579. DOI: 10.1143/Jjap.37.L577  0.455
1997 Eddy CR, Glembocki OJ, Shamamian VA, Leonhardt D, Holm RT, Butler JE, Thoms BD, Pang SW, Ko KK, Berg EW, Stutz CE. Characterization of GaAs surfaces subjected to a Cl2/Ar high density plasma etching process Materials Research Society Symposium - Proceedings. 448: 33-37. DOI: 10.1557/Proc-448-33  0.399
1997 Pehrsson PE, Thoms BD. Surface oxidation chemistry of β-SiC Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 1-9. DOI: 10.1116/1.580466  0.457
1997 Eddy CR, Glembocki OJ, Leonhardt D, Shamamian VA, Holm RT, Thoms BD, Butler JE, Pang SW. Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process Journal of Electronic Materials. 26: 1320-1325. DOI: 10.1007/S11664-997-0078-8  0.475
1995 Koleske DD, Gates SM, Thoms BD, Russell JN, Butler JE. Hydrogen on polycrystalline diamond films: Studies of isothermal desorption and atomic deuterium abstraction The Journal of Chemical Physics. 102: 992-1002. DOI: 10.1063/1.469167  0.493
1995 Thoms BD, Russell JN. Identification of a surface azide from the reaction of HN3 with C(100) Surface Science. 337: L807-L811. DOI: 10.1016/0039-6028(95)80040-9  0.479
1995 Thoms BD, Butler JE. HREELS and LEED of H C(100): the 2 × 1 monohydride dimer row reconstruction Surface Science. 328: 291-301. DOI: 10.1016/0039-6028(95)00039-9  0.568
1994 Thoms BD, Russell JN, Pehrsson PE, Butler JE. Adsorption and abstraction of hydrogen on polycrystalline diamond The Journal of Chemical Physics. 100: 8425-8431. DOI: 10.1063/1.466740  0.529
1994 Thoms BD, Pehrsson PE, Butler JE. A vibrational study of the adsorption and desorption of hydrogen on polycrystalline diamond Journal of Applied Physics. 75: 1804-1810. DOI: 10.1063/1.356373  0.597
1994 Thoms BD, Owens MS, Butler JE, Spiro C. Production and characterization of smooth, hydrogen-terminated diamond C(100) Applied Physics Letters. 65: 2957-2959. DOI: 10.1063/1.112503  0.587
1994 Koleske DD, Gates SM, Thoms BD, Russell JN, Butler JE. Isothermal desorption of hydrogen from polycrystalline diamond films Surface Science. 320: L105-L111. DOI: 10.1016/0039-6028(94)90306-9  0.405
1992 Lorraine PW, Thoms BD, Ho W. A differentially pumped electron-energy-loss spectrometer with multichannel detector for time-resolved studies at intermediate ambient pressures Review of Scientific Instruments. 63: 1652-1670. DOI: 10.1063/1.1143320  0.438
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