☰

Steven J. Koester - Publications

Affiliations: 
University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Electrical Engineering
Tree Info Similar researchers PubMed Report error

89 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Liu F, Golani P, Truttmann TK, Evangelista I, Smeaton MA, Bugallo D, Wen J, Manjeshwar AK, May SJ, Kourkoutis LF, Janotti A, Koester SJ, Jalan B. Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO. Acs Nano. PMID 37638732 DOI: 10.1021/acsnano.3c04003  0.752
2022 Capman NSS, Zhen XV, Nelson JT, Chaganti VRSK, Finc RC, Lyden MJ, Williams TL, Freking M, Sherwood GJ, Bühlmann P, Hogan CJ, Koester SJ. Machine Learning-Based Rapid Detection of Volatile Organic Compounds in a Graphene Electronic Nose. Acs Nano. PMID 36367841 DOI: 10.1021/acsnano.2c10240  0.47
2021 Izquierdo N, Myers JC, Golani P, De Los Santos A, Seaton N, Koester SJ, Campbell SA. Growth of Black Arsenic Phosphorus Thin Films and its Application for Field-Effect Transistors. Nanotechnology. PMID 33906169 DOI: 10.1088/1361-6528/abfc09  0.732
2021 Namgung S, Koester SJ, Oh SH. Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices. Acs Nano. PMID 33625831 DOI: 10.1021/acsnano.0c10759  0.308
2020 Golani P, Yun H, Ghosh S, Wen J, Mkhoyan A, Koester SJ. Ambipolar transport in van der waals black arsenic field effect transistors. Nanotechnology. PMID 32544901 DOI: 10.1088/1361-6528/Ab9D40  0.75
2020 Yun H, Ghosh S, Golani P, Koester SJ, Mkhoyan KA. Layer-Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly-Anisotropic Black As. Acs Nano. PMID 32310631 DOI: 10.1021/Acsnano.0C01506  0.728
2020 Stephan AW, Koester SJ. Spin Hall MTJ Devices for Advanced Neuromorphic Functions Ieee Transactions On Electron Devices. 67: 487-492. DOI: 10.1109/Ted.2019.2959732  0.314
2020 Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs—Part II: Model Validation Against Numerical and Experimental Data Ieee Transactions On Electron Devices. 67: 397-405. DOI: 10.1109/Ted.2019.2955651  0.391
2020 Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs—Part I: Effect of Contacts, Temperature, Ambipolarity, and Traps Ieee Transactions On Electron Devices. 67: 389-396. DOI: 10.1109/Ted.2019.2951662  0.378
2020 Chaganti VRSK, Truttmann TK, Liu F, Jalan B, Koester SJ. SrSnO 3 Field-Effect Transistors With Recessed Gate Electrodes Ieee Electron Device Letters. 41: 1428-1431. DOI: 10.1109/Led.2020.3011058  0.391
2020 Zhang Y, Su Q, Zhu J, Koirala S, Koester SJ, Wang X. Thickness-dependent thermal conductivity of mechanically exfoliated β -Ga 2 O 3 thin films Applied Physics Letters. 116: 202101. DOI: 10.1063/5.0004984  0.317
2019 Ma R, Zhang H, Yoo Y, Degregorio ZP, Jin L, Golani P, Ghasemi Azadani J, Low T, Johns JE, Bendersky LA, Davydov AV, Koester SJ. MoTe Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering. Acs Nano. PMID 31247141 DOI: 10.1021/Acsnano.9B02785  0.73
2019 Hu J, Stecklein G, Deen DA, Su Q, Crowell PA, Koester SJ. Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves Ieee Transactions On Electron Devices. 66: 5003-5010. DOI: 10.1109/Ted.2019.2943350  0.326
2019 Robbins MC, Golani P, Koester SJ. Right-Angle Black Phosphorus Tunneling Field Effect Transistor Ieee Electron Device Letters. 40: 1988-1991. DOI: 10.1109/Led.2019.2946763  0.322
2019 Wu RJ, Udyavara S, Ma R, Wang Y, Chhowalla M, Birol T, Koester SJ, Neurock M, Mkhoyan KA. Visualizing the metal- MoS2 contacts in two-dimensional field-effect transistors with atomic resolution Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.111001  0.321
2019 Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors Journal of Applied Physics. 125: 165706. DOI: 10.1063/1.5064474  0.396
2019 Zare Bidoky F, Tang B, Ma R, Jochem KS, Hyun WJ, Song D, Koester SJ, Lodge TP, Frisbie CD. Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance Advanced Functional Materials. 30: 1902028. DOI: 10.1002/Adfm.201902028  0.305
2018 Yue J, Prakash A, Robbins MC, Koester SJ, Jalan B. Depletion Mode MOSFET using La-doped BaSnO as a Channel Material. Acs Applied Materials & Interfaces. PMID 29897732 DOI: 10.1021/Acsami.8B05229  0.449
2018 Liang CD, Ma R, Su Y, O'Hara A, Zhang EX, Alles ML, Wang P, Zhao SE, Pantelides ST, Koester SJ, Schrimpf RD, Fleetwood DM. Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Nuclear Science. 65: 1227-1238. DOI: 10.1109/Tns.2018.2828080  0.336
2018 Haratipour N, Liu Y, Wu RJ, Namgung S, Ruden PP, Mkhoyan KA, Oh S, Koester SJ. Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Electron Devices. 65: 4093-4101. DOI: 10.1109/Ted.2018.2865440  0.39
2018 Chaganti VRSK, Prakash A, Yue J, Jalan B, Koester SJ. Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET Ieee Electron Device Letters. 39: 1381-1384. DOI: 10.1109/Led.2018.2861320  0.409
2018 Anugrah Y, Hu J, Stecklein G, Crowell PA, Koester SJ. Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves Aip Advances. 8: 015129. DOI: 10.1063/1.5008761  0.323
2018 Zhen XV, Swanson EG, Nelson JT, Zhang Y, Su Q, Koester SJ, Bühlmann P. Noncovalent Monolayer Modification of Graphene Using Pyrene and Cyclodextrin Receptors for Chemical Sensing Acs Applied Nano Materials. 1: 2718-2726. DOI: 10.1021/acsanm.8b00420  0.45
2017 Barik A, Zhang Y, Grassi R, Nadappuram BP, Edel JB, Low T, Koester SJ, Oh SH. Graphene-edge dielectrophoretic tweezers for trapping of biomolecules. Nature Communications. 8: 1867. PMID 29192277 DOI: 10.1038/S41467-017-01635-9  0.464
2017 Zhang Y, Ma R, Zhen X, Kudva Y, Buhlmann P, Koester SJ. Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors. Acs Applied Materials & Interfaces. PMID 29023095 DOI: 10.1021/Acsami.7B14864  0.587
2017 Deng B, Tran V, Xie Y, Jiang H, Li C, Guo Q, Wang X, Tian H, Koester SJ, Wang H, Cha JJ, Xia Q, Yang L, Xia F. Efficient electrical control of thin-film black phosphorus bandgap. Nature Communications. 8: 14474. PMID 28422160 DOI: 10.1038/Ncomms14474  0.399
2017 Robbins MC, Namgung S, Oh SH, Koester SJ. Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices. Acs Applied Materials & Interfaces. PMID 28286947 DOI: 10.1021/Acsami.6B14477  0.307
2017 Yoo Y, DeGregorio ZP, Su Y, Koester SJ, Johns JE. In-Plane 2H-1T' MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering. Advanced Materials (Deerfield Beach, Fla.). PMID 28221704 DOI: 10.1002/Adma.201605461  0.337
2017 Joung D, Nemilentsau A, Agarwal K, Dai C, Liu C, Su Q, Li J, Low T, Koester SJ, Cho JH. Self-Assembled Three-Dimensional Graphene-Based Polyhedrons Inducing Volumetric Light Confinement. Nano Letters. PMID 28147479 DOI: 10.1021/Acs.Nanolett.6B05412  0.323
2017 Haratipour N, Namgung S, Grassi R, Low T, Oh S, Koester SJ. High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering Ieee Electron Device Letters. 38: 685-688. DOI: 10.1109/Led.2017.2679117  0.348
2017 Robbins MC, Koester SJ. Black Phosphorus p- and n-MOSFETs With Electrostatically Doped Contacts Ieee Electron Device Letters. 38: 285-288. DOI: 10.1109/Led.2016.2638818  0.426
2017 Grassi R, Wu Y, Koester SJ, Low T. Semianalytical model of the contact resistance in two-dimensional semiconductors Physical Review B. 96. DOI: 10.1103/Physrevb.96.165439  0.382
2016 Namgung S, Shaver J, Oh SH, Koester SJ. Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials. Acs Nano. 10: 10500-10506. PMID 27934086 DOI: 10.1021/Acsnano.6B06468  0.382
2016 Kshirsagar CU, Xu W, Su Y, Robbins MC, Kim CH, Koester SJ. Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents. Acs Nano. PMID 27559610 DOI: 10.1021/Acsnano.6B03440  0.34
2016 Haratipour N, Namgung S, Oh SH, Koester SJ. Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors. Acs Nano. PMID 26914179 DOI: 10.1021/Acsnano.6B00482  0.449
2016 Haratipour N, Koester SJ. Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance Ieee Electron Device Letters. 37: 103-106. DOI: 10.1109/Led.2015.2499209  0.403
2016 Özçelik VO, Azadani JG, Yang C, Koester SJ, Low T. Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching Physical Review B. 94: 35125. DOI: 10.1103/Physrevb.94.035125  0.319
2016 Stecklein G, Crowell PA, Li J, Anugrah Y, Su Q, Koester SJ. Contact-Induced Spin Relaxation in Graphene Nonlocal Spin Valves Physical Review Applied. 6. DOI: 10.1103/Physrevapplied.6.054015  0.304
2016 Su Y, Kshirsagar CU, Robbins MC, Haratipour N, Koester SJ. Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors 2d Materials. 3. DOI: 10.1088/2053-1583/3/1/011006  0.384
2015 Olson EJ, Ma R, Sun T, Ebrish M, Haratipour N, Min K, Aluru NR, Koester S. Capacitive sensing of intercalated H2O molecules using graphene. Acs Applied Materials & Interfaces. PMID 26502269 DOI: 10.1021/Acsami.5B07731  0.327
2015 Wu RJ, Topsakal M, Low T, Robbins MC, Haratipour N, Jeong JS, Wentzcovitch RM, Koester SJ, Mkhoyan KA. Atomic and electronic structure of exfoliated black phosphorus Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4926753  0.395
2015 Szabo A, Koester SJ, Luisier M. Ab-initio simulation of van der Waals MoTe<inf>2</inf>-SnS<inf>2</inf> heterotunneling FETs for low-power electronics Ieee Electron Device Letters. 36: 514-516. DOI: 10.1109/Led.2015.2409212  0.4
2015 Haratipour N, Robbins MC, Koester SJ. Black Phosphorus p-MOSFETs with 7-nm HfO2 Gate Dielectric and Low Contact Resistance Ieee Electron Device Letters. 36: 411-413. DOI: 10.1109/Led.2015.2407195  0.339
2015 Anugrah Y, Robbins MC, Crowell PA, Koester SJ. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene Applied Physics Letters. 106. DOI: 10.1063/1.4914978  0.316
2015 Youngblood N, Chen C, Koester SJ, Li M. Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current Nature Photonics. 9: 247-252. DOI: 10.1038/Nphoton.2015.23  0.424
2014 Ebrish MA, Olson EJ, Koester SJ. Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene Acs Applied Materials and Interfaces. 6: 10296-10303. PMID 24896230 DOI: 10.1021/Am5017057  0.349
2014 Youngblood N, Anugrah Y, Ma R, Koester SJ, Li M. Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides. Nano Letters. 14: 2741-6. PMID 24734877 DOI: 10.1021/Nl500712U  0.362
2014 Li Y, Porter WM, Kshirsagar C, Roth I, Su Y, Reynolds MA, Gerbi BJ, Koester SJ. Fully-depleted silicon-on-insulator devices for radiation dosimetry in cancer therapy Ieee Transactions On Nuclear Science. 61: 3443-3450. DOI: 10.1109/Tns.2014.2365544  0.342
2014 Koester SJ, Li M. Waveguide-coupled graphene optoelectronics Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2272316  0.324
2014 Deen DA, Olson EJ, Ebrish MA, Koester SJ. Graphene-based quantum capacitance wireless vapor sensors Ieee Sensors Journal. 14: 1459-1466. DOI: 10.1109/Jsen.2013.2295302  0.319
2014 Haratipour N, Koester SJ. Multi-layer MoTe2 p-channel MOSFETs with high drive current Device Research Conference - Conference Digest, Drc. 171-172. DOI: 10.1109/DRC.2014.6872352  0.357
2014 Szabo A, Koester SJ, Luisier M. Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics? Device Research Conference - Conference Digest, Drc. 19-20. DOI: 10.1109/DRC.2014.6872279  0.306
2013 Lee Y, Kim D, Cai J, Lauer I, Chang L, Koester SJ, Blaauw D, Sylvester D. Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs) Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 21: 1632-1643. DOI: 10.1109/Tvlsi.2012.2213103  0.345
2013 Su Y, Ebrish MA, Olson EJ, Koester SJ. SnSe2 field-effect transistors with high drive current Applied Physics Letters. 103. DOI: 10.1063/1.4857495  0.37
2013 Deen DA, Champlain JG, Koester SJ. Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4818754  0.421
2012 Koester SJ, Li H, Li M. Switching energy limits of waveguide-coupled graphene-on-graphene optical modulators Optics Express. 20: 20330-20341. PMID 23037084 DOI: 10.1364/Oe.20.020330  0.338
2012 Li H, Anugrah Y, Koester SJ, Li M. Optical absorption in graphene integrated on silicon waveguides Applied Physics Letters. 101. DOI: 10.1063/1.4752435  0.344
2012 Koester SJ, Li M. High-speed waveguide-coupled graphene-on-graphene optical modulators Applied Physics Letters. 100. DOI: 10.1063/1.4704663  0.38
2012 Ebrish MA, Shao H, Koester SJ. Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes Applied Physics Letters. 100. DOI: 10.1063/1.3698394  0.386
2011 Koester SJ. High quality factor graphene varactors for wireless sensing applications Applied Physics Letters. 99. DOI: 10.1063/1.3651334  0.372
2010 Koswatta SO, Koester SJ, Haensch W. On the possibility of obtaining MOSFET-like performance and Sub-60-mV/dec swing in 1-D broken-gap tunnel transistors Ieee Transactions On Electron Devices. 57: 3222-3230. DOI: 10.1109/Ted.2010.2079250  0.375
2010 Majumdar A, Ouyang C, Koester SJ, Haensch W. Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs Ieee Transactions On Electron Devices. 57: 2067-2072. DOI: 10.1109/Ted.2010.2052410  0.332
2010 Zhang Q, Lu Y, Xing HG, Koester SJ, Koswatta SO. Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons Ieee Electron Device Letters. 31: 531-533. DOI: 10.1109/Led.2010.2045100  0.37
2009 Majumdar A, Ren Z, Koester SJ, Haensch W. Undoped-body extremely thin SOI MOSFETs with back gates Ieee Transactions On Electron Devices. 56: 2270-2276. DOI: 10.1109/Ted.2009.2028057  0.402
2009 Majumdar A, Wang X, Kumar A, Holt JR, Dobuzinsky D, Venigalla R, Ouyang C, Koester SJ, Haensch W. Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs Ieee Electron Device Letters. 30: 413-415. DOI: 10.1109/Led.2009.2014086  0.346
2008 Majumdar A, Ren Z, Sleight JW, Dobuzinsky D, Holt JR, Venigalla R, Koester SJ, Haensch W. High-performance undoped-body 8-nm-thin SOI field-effect transistors Ieee Electron Device Letters. 29: 515-517. DOI: 10.1109/Led.2008.920975  0.366
2008 Bedell SW, Majumdar A, Ott JA, Arnold J, Fogel K, Koester SJ, Sadana DK. Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs Ieee Electron Device Letters. 29: 811-813. DOI: 10.1109/Led.2008.2000713  0.349
2008 Chen KN, Krusin-Elbaum L, Newns DM, Elmegreen BG, Cheek R, Rana N, Young AM, Koester SJ, Lam C. Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications Ieee Electron Device Letters. 29: 131-133. DOI: 10.1109/Led.2007.912016  0.317
2007 Madan A, Jun B, Diestelhorst RM, Appaswamy A, Cressler JD, Schrimpf RD, Fleetwood DM, Marshall PW, Isaacs-Smith T, Williams JR, Koester SJ. The radiation tolerance of strained Si/SiGe n-MODFETs Ieee Transactions On Nuclear Science. 54: 2251-2256. DOI: 10.1109/Tns.2007.907871  0.347
2007 Sturm J, Fitzgerald E, Koester S, Kolodzey J, Muroto J, Paul D, Tillack B, Zaima S, Ghyselen B, Takagi S. Papers from the 3rd international SiGe technology and device meeting (Princeton, New Jersey, USA, 15-17 May 2006) (ISTDM 2006) Semiconductor Science and Technology. 22. DOI: 10.1088/0268-1242/22/1/E01  0.384
2006 Schow CL, Schares L, Koester SJ, Dehlinger G, John R, Doany FE. A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC Ieee Photonics Technology Letters. 18: 1981-1983. DOI: 10.1109/Lpt.2006.880770  0.342
2006 Koester SJ, Schaub JD, Dehlinger G, Chu JO. Germanium-on-SOI infrared detectors for integrated photonic applications Ieee Journal On Selected Topics in Quantum Electronics. 12: 1489-1502. DOI: 10.1109/Jstqe.2006.883160  0.404
2006 Frank MM, Koester SJ, Copel M, Ott JA, Paruchuri VK, Shang H, Loesing R. Hafnium oxide gate dielectrics on sulfur-passivated germanium Applied Physics Letters. 89. DOI: 10.1063/1.2338751  0.368
2005 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV. Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping Ieee Electron Device Letters. 26: 817-819. DOI: 10.1109/Led.2005.858103  0.366
2004 Dehlinger G, Koester SJ, Schaub JD, Chu JO, Ouyang QC, Grill A. High-speed Germanium-on-SOI lateral PIN photodiodes Ieee Photonics Technology Letters. 16: 2547-2549. DOI: 10.1109/Lpt.2004.835631  0.317
2003 Freeman GG, Jagannathan B, Zamdmer N, Groves R, Singh R, Tretiakov Y, Kumar M, Johnson JB, Plouchart JO, Greenberg DR, Koester SJ, Schaub JD. Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications International Journal of High Speed Electronics and Systems. 13: 175-219. DOI: 10.1142/S0129156403001570  0.373
2002 Huang L, Chu JO, Goma SA, D'Emic CP, Koester SJ, Canaperi DF, Mooney PM, Cordes SA, Speidell JL, Anderson RM, Wong H-P. Electron and hole mobility enhancement in strained SOI by wafer bonding Ieee Transactions On Electron Devices. 49: 1566-1571. DOI: 10.1109/Ted.2002.802675  0.383
2001 Huang LJ, Chu JO, Canaperi DF, D’Emic CP, Anderson RM, Koester SJ, Wong H-P. SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors Applied Physics Letters. 78: 1267-1269. DOI: 10.1063/1.1342212  0.376
2000 Lu W, Koester SJ, Wang X, Chu JO, Ma T, Adesida I. Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 3488. DOI: 10.1116/1.1321286  0.401
2000 Koester SJ, Hammond R, Chu JO. Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD Ieee Electron Device Letters. 21: 110-112. DOI: 10.1109/55.823572  0.304
2000 Lu W, Kuliev A, Koester S, Wang X, Chu J, Ma T, Adesida I. High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's Ieee Transactions On Electron Devices. 47: 1645-1652. DOI: 10.1109/16.853043  0.368
2000 Koester SJ, Chu JO, Webster CS. High-frequency noise performance of SiGe p-channel MODFETs Electronics Letters. 36: 674-675. DOI: 10.1049/El:20000512  0.336
1999 Lu W, Wang X, Hammond R, Kuliev A, Koester S, Chu J, Ismail K, Ma T, Adesida I. p-Type SiGe transistors with low gate leakage using SiN gate dielectric Ieee Electron Device Letters. 20: 514-516. DOI: 10.1109/55.791927  0.394
1999 Hammond R, Koester SJ, Chu JO. High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs Electronics Letters. 35: 1590-1591. DOI: 10.1049/El:19991036  0.415
1999 Koester SJ, Chu JO, Groves RA. High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD Electronics Letters. 35: 86-87. DOI: 10.1049/El:19990075  0.389
1997 Koester SJ, Ismail K, Chu JO. Determination of spin- and valley-split energy levels in strained Si quantum wells Semiconductor Science and Technology. 12: 384-388. DOI: 10.1088/0268-1242/12/4/007  0.32
1997 Koester SJ, Ismail K, Lee KY, Chu JO. Negative differential conductance in strained Si point contacts and wires Applied Physics Letters. 71: 1528-1530. DOI: 10.1063/1.119956  0.373
1997 Koester SJ, Ismail K, Lee KY, Chu JO. Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells Applied Physics Letters. 70: 2422-2424. DOI: 10.1063/1.118891  0.394
1993 Koester SJ, Bolognesi CR, Rooks MJ, Hu EL, Kroemer H. Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells Applied Physics Letters. 62: 1373-1375. DOI: 10.1063/1.108683  0.447
Show low-probability matches.