Alfonso Baldereschi - Publications

Affiliations: 
École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland 

98 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Vesselli E, Rizzi M, Furlan S, Duan X, Monachino E, Dri C, Peronio A, Africh C, Lacovig P, Baldereschi A, Comelli G, Peressi M. Tunability of the CO adsorption energy on a Ni/Cu surface: Site change and coverage effects. The Journal of Chemical Physics. 146: 224707. PMID 29166071 DOI: 10.1063/1.4985657  0.301
2015 Olmos-Asar JA, Vesselli E, Baldereschi A, Peressi M. Towards optimal seeding for the synthesis of ordered nanoparticle arrays on alumina/Ni3Al(111). Physical Chemistry Chemical Physics : Pccp. PMID 25793457 DOI: 10.1039/C5Cp00304K  0.301
2014 Olmos-Asar JA, Vesselli E, Baldereschi A, Peressi M. Self-seeded nucleation of Cu nanoclusters on Al2O3/Ni3Al(111): an ab initio investigation. Physical Chemistry Chemical Physics : Pccp. 16: 23134-42. PMID 25251210 DOI: 10.1039/C4Cp03271C  0.316
2013 Posternak M, Berner S, Baldereschi A, Delley B. Enhancing hydrophilicity of anatase TiO2 surfaces by deposition of alkaline earths: The case of ca Journal of Physical Chemistry C. 117: 26013-26020. DOI: 10.1021/Jp406817K  0.304
2010 Ouyang CY, Sljivancanin Z, Baldereschi A. Transition from Mn(4+) to Mn(3+) induced by surface reconstruction at λ-MnO(2)(001). The Journal of Chemical Physics. 133: 204701. PMID 21133446 DOI: 10.1063/1.3509401  0.362
2010 Tomba G, Stengel M, Schneider WD, Baldereschi A, De Vita A. Supramolecular self-assembly driven by electrostatic repulsion: The 1D aggregation of rubrene pentagons on Au111. Acs Nano. 4: 7545-51. PMID 21080665 DOI: 10.1021/Nn101884P  0.331
2010 Dri C, Peronio A, Vesselli E, Africh C, Rizzi M, Baldereschi A, Peressi M, Comelli G. Imaging and characterization of activated CO2 species on Ni(110) Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.165403  0.319
2010 Stevanović V, Šljivancanin Z, Baldereschi A. Role of adsorbed H, C, O, and CO on the atomic structure of free and MgO(100)-supported Ir4 clusters: An ab initio study Journal of Physical Chemistry C. 114: 15653-15660. DOI: 10.1021/Jp101012B  0.346
2009 Posternak M, Baldereschi A, Delley B. Dissociation of water on anatase TiO2 nanoparticles: The role of undercoordinated Ti atoms at edges Journal of Physical Chemistry C. 113: 15862-15867. DOI: 10.1021/Jp9032113  0.34
2008 Vesselli E, De Rogatis L, Ding X, Baraldi A, Savio L, Vattuone L, Rocca M, Fornasiero P, Peressi M, Baldereschi A, Rosei R, Comelli G. Carbon dioxide hydrogenation on Ni(110). Journal of the American Chemical Society. 130: 11417-22. PMID 18665600 DOI: 10.1021/Ja802554G  0.323
2007 Stevanovi? V, Sljivancanin Z, Baldereschi A. Effect of carbon adsorption on the isomer stability of Ir4 clusters. Physical Review Letters. 99: 165501. PMID 17995263 DOI: 10.1103/Physrevlett.99.165501  0.349
2007 Ding X, De Rogatis L, Vesselli E, Baraldi A, Comelli G, Rosei R, Savio L, Vattuone L, Rocca M, Fornasiero P, Ancilotto F, Baldereschi A, Peressi M. Interaction of carbon dioxide with Ni(110): A combined experimental and theoretical study Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.195425  0.336
2006 Šljivančanin Z, Popović ZS, Vukajlović FR, Baldereschi A. Atomic structure and spin magnetism of self-assembled Co nanowires on Pt(332) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.134412  0.357
2006 Debernardi A, Baldereschi A, Fanciulli M. Computation of the Stark effect in P impurity states in silicon Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.035202  0.341
2005 Debernardi A, Peressi M, Baldereschi A. Spin polarization and band alignments at NiMnSb/GaAs interface Computational Materials Science. 33: 263-268. DOI: 10.1016/J.Commatsci.2004.12.048  0.372
2004 Cangiani G, Baldereschi A, Posternak M, Krakauer H. Born charge differences of TiO2 polytypes: Multipole expansion of Wannier charge densities Physical Review B - Condensed Matter and Materials Physics. 69: 1211011-1211014. DOI: 10.1103/Physrevb.69.121101  0.348
2004 Sgiarovello C, Binggeli N, Baldereschi A. Surface morphology and ionization potentials of polar semiconductors: The case of GaAs Physical Review B - Condensed Matter and Materials Physics. 69: 353201-353208. DOI: 10.1103/Physrevb.69.035320  0.325
2004 Pelucchi E, Rubini S, Bonanni B, Franciosi A, Zaoui A, Peressi M, Baldereschi A, De Salvador D, Berti M, Drigo A, Romanato F. Structural and electronic properties of wide band gap Zn 1-xMgxSe alloys Journal of Applied Physics. 95: 4184-4192. DOI: 10.1063/1.1682688  0.366
2004 Vladimirova M, Trimarchi G, Baldereschi A, Weckesser J, Kern K, Barth JV, De Vita A. Substrate-induced supramolecular ordering of functional molecules: Theoretical modelling and STM investigation of the PEBA/Ag(1 1 1) system Acta Materialia. 52: 1589-1595. DOI: 10.1016/J.Actamat.2003.12.004  0.349
2003 Berthod C, Binggeli N, Baldereschi A. Schottky barrier heights at polar metal/semiconductor interfaces Physical Review B - Condensed Matter and Materials Physics. 68: 853231-8532311. DOI: 10.1103/Physrevb.68.085323  0.36
2003 Maxisch T, Binggeli N, Baldereschi A. Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions Physical Review B - Condensed Matter and Materials Physics. 67: 1253151-1253156. DOI: 10.1103/Physrevb.67.125315  0.415
2003 Debernardi A, Peressi M, Baldereschi A. Electronic properties of Mn compounds under strain Computational Materials Science. 27: 175-180. DOI: 10.1016/S0927-0256(02)00442-1  0.31
2003 Maxisch T, Baldereschi A, Binggeli N. Midgap interface states at epitaxial Al/AlAs(001) heterojunctions Solid State Communications. 126: 265-268. DOI: 10.1016/S0038-1098(03)00109-1  0.409
2003 Debernardi A, Peressi M, Baldereschi A. Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs Materials Science and Engineering C. 23: 743-746. DOI: 10.1016/J.Msec.2003.09.074  0.395
2002 Fall CJ, Binggeli N, Baldereschi A. Work functions and surface charges at metallic facet edges Physical Review B - Condensed Matter and Materials Physics. 66: 754051-7540510. DOI: 10.1103/Physrevb.66.075405  0.372
2002 Posternak M, Baldereschi A, Massidda S, Marzari N. Maximally localized Wannier functions in antiferromagnetic MnO within the FLAWPW formalism Physical Review B - Condensed Matter and Materials Physics. 65: 1844221-18442211. DOI: 10.1103/Physrevb.65.184422  0.534
2002 Haerle R, Riedo E, Pasquarello A, Baldereschi A. sp2/sp3 hybridization ratio in amorphous carbon from C 1s core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation Physical Review B - Condensed Matter and Materials Physics. 65: 451011-451019. DOI: 10.1103/Physrevb.65.045101  0.367
2002 Peressi M, Favot F, Cangiani G, Baldereschi A. Interface states at ZnSe/Ge heterojunctions: The role of atomic interdiffusion and disorder Applied Physics Letters. 81: 5171-5173. DOI: 10.1063/1.1532555  0.381
2001 Sgiarovello C, Binggeli N, Baldereschi A. Influence of surface morphology on the Si(100) and (111) ionization potentials Physical Review B - Condensed Matter and Materials Physics. 64: 1953051-1953057. DOI: 10.1103/Physrevb.64.195305  0.312
2001 Binggeli N, Ferrara P, Baldereschi A. Band-offset trends in nitride heterojunctions Physical Review B - Condensed Matter and Materials Physics. 63: 2453061-24530613. DOI: 10.1103/Physrevb.63.245306  0.389
2001 Rubini S, Pelucchi E, Lazzarino M, Kumar D, Franciosi A, Berthod C, Binggeli N, Baldereschi A. Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) Physical Review B - Condensed Matter and Materials Physics. 63: 2353071-2353078. DOI: 10.1103/Physrevb.63.235307  0.349
2001 Favot F, Dal Corso A, Baldereschi A. CO adsorbed on Cu(001): A comparison between local density approximation and Perdew, Burke, and Ernezerhof generalized gradient approximation Journal of Chemical Physics. 114: 483-488. DOI: 10.1063/1.1328042  0.336
2001 Haerle R, Pasquarello A, Baldereschi A. First-principle study of C 1s core-level shifts in amorphous carbon Computational Materials Science. 22: 67-72. DOI: 10.1016/S0927-0256(01)00167-7  0.348
2001 Fornari M, Marzari N, Peressi M, Baldereschi A. Wannier functions characterization of floating bonds in a-Si Computational Materials Science. 20: 337-342. DOI: 10.1016/S0927-0256(00)00191-9  0.586
2000 Favot F, Dal Corso A, Baldereschi A. Adsorption geometry of benzene on Pd(110): Results of first-principles calculations Europhysics Letters. 52: 698-704. DOI: 10.1209/Epl/I2000-00494-8  0.323
2000 Berthod C, Binggeli N, Baldereschi A. Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2114-2118. DOI: 10.1116/1.1303734  0.366
2000 Fall CJ, Binggeli N, Baldereschi A. Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure Physical Review B - Condensed Matter and Materials Physics. 61: 8489-8495. DOI: 10.1103/Physrevb.61.8489  0.338
2000 Bardi J, Binggeli N, Baldereschi A. Existence of localized interface states in meta/GaAs(100) junctions: Au versus Al contacts Physical Review B - Condensed Matter and Materials Physics. 61: 5416-5422. DOI: 10.1103/Physrevb.61.5416  0.315
2000 Peressi M, Fornari M, De Gironcoli S, De Santis L, Baldereschi A. Coordination defects in amorphous silicon and hydrogenated amorphous silicon: A characterization from first-principles calculations Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 80: 515-521. DOI: 10.1080/13642810008209759  0.347
2000 Haerle R, Baldereschi A, Galli G. Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamics Journal of Non-Crystalline Solids. 266: 740-745. DOI: 10.1016/S0022-3093(99)00793-0  0.351
1999 Favot F, Dal Corso A, Baldereschi A. Ab-initio study of the structure of Pd(110)-c(4 × 2)-benzene Surface Review and Letters. 6: 903-906. DOI: 10.1142/S0218625X99000962  0.313
1999 Fall CJ, Binggeli N, Baldereschi A. Deriving accurate work functions from thin-slab calculations Journal of Physics Condensed Matter. 11: 2689-2696. DOI: 10.1088/0953-8984/11/13/006  0.363
1999 Haerle R, Galli G, Baldereschi A. Structural models of amorphous carbon surfaces Applied Physics Letters. 75: 1718-1720. DOI: 10.1063/1.124836  0.33
1998 Fall CJ, Binggeli N, Baldereschi A. Anomaly in the anisotropy of the aluminum work function Physical Review B - Condensed Matter and Materials Physics. 58: R7544-R7547. DOI: 10.1103/Physrevb.58.R7544  0.335
1998 Fernández P, Dal Corso A, Baldereschi A. Ab initio study of the dielectric properties of silicon and gallium arsenide using polarized Wannier functions Physical Review B - Condensed Matter and Materials Physics. 58: R7480-R7483. DOI: 10.1103/Physrevb.58.R7480  0.302
1998 Berthod C, Binggeli N, Baldereschi A. Formation energy, lattice relaxation, and electronic structure of Al/Si/GaAs(100) junctions Physical Review B - Condensed Matter and Materials Physics. 57: 9757-9762. DOI: 10.1103/Physrevb.57.9757  0.372
1998 Di Ventra M, Baldereschi A. Near-band-edge resonant states of AIAs monolayers embedded in bulk GaAs: The role of d symmetries Physical Review B - Condensed Matter and Materials Physics. 57: 3733-3736. DOI: 10.1103/Physrevb.57.3733  0.333
1998 Bitz A, Di Ventra M, Baldereschi A, Staehli J, Pietag F, Gottschalch V, Rhan H, Schwabe R. Optical properties of ultrathin GaAs layers embedded in AlxGa1-xAs Physical Review B - Condensed Matter and Materials Physics. 57: 2426-2430. DOI: 10.1103/Physrevb.57.2426  0.304
1998 Peressi M, Binggeli N, Baldereschi A. Band engineering at interfaces: Theory and numerical experiments Journal of Physics D: Applied Physics. 31: 1273-1299. DOI: 10.1088/0022-3727/31/11/002  0.332
1997 Binggeli N, Ferrara P, Baldereschi A. Band Offsets In GaN/AlN and AlN/SiC Heterojunctions Mrs Proceedings. 482. DOI: 10.1557/Proc-482-911  0.395
1997 Dal Corso A, Baldereschi A. Ab initio study of the structural and electronic properties of adsorbates: CO on Cu(001) Surface Review and Letters. 4: 885-889. DOI: 10.1142/S0218625X97000973  0.343
1997 Dal Corso A, Pasquarello A, Baldereschi A. Density-functional perturbation theory for lattice dynamics with ultrasoft pseudopotentials Physical Review B - Condensed Matter and Materials Physics. 56: R11369-R11372. DOI: 10.1103/Physrevb.56.R11369  0.337
1997 Ferrara P, Binggeli N, Baldereschi A. Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures Physical Review B. 55: R7418-R7426. DOI: 10.1103/Physrevb.55.R7418  0.414
1997 Fernández P, Dal Corso A, Baldereschi A, Mauri F. First-principles Wannier functions of silicon and gallium arsenide Physical Review B - Condensed Matter and Materials Physics. 55: R1909-R1913. DOI: 10.1103/Physrevb.55.R1909  0.385
1996 Di Ventra M, Peressi M, Baldereschi A. Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions. Physical Review. B, Condensed Matter. 54: 5691-5695. PMID 9986532 DOI: 10.1103/Physrevb.54.5691  0.349
1996 Bardi J, Binggeli N, Baldereschi A. Pressure and alloy-composition dependence of Al/Ga1-xAlxAs (100) Schottky barriers. Physical Review. B, Condensed Matter. 54: R11102-R11105. PMID 9984996 DOI: 10.1103/Physrevb.54.R11102  0.331
1996 Dal Corso A, Pasquarello A, Baldereschi A, Car R. Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids. Physical Review. B, Condensed Matter. 53: 1180-1185. PMID 9983574 DOI: 10.1103/Physrevb.53.1180  0.395
1996 Berthod C, Binggeli N, Baldereschi A. Local interface dipoles cind the tuning of the Al/GaAs(100) Schottky-barrier height with ultrathin Si interlayers Europhysics Letters. 36: 67-72. DOI: 10.1209/Epl/I1996-00188-3  0.389
1996 Berthod C, Bardi J, Binggeli N, Baldereschi A. Schottky barrier tuning at Al/GaAs(100) junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3000-3007. DOI: 10.1116/1.588949  0.394
1996 Ventra MD, Peressi M, Baldereschi A. Role of structural and chemical contributions to valence‐band offsets at strained‐layer heterojunctions: The GaAs/GaP (001) case Journal of Vacuum Science & Technology B. 14: 2936-2939. DOI: 10.1116/1.588937  0.363
1996 Di Ventra M, Papp G, Coluzza C, Baldereschi A, Schulz PA. Indented barrier resonant tunneling rectifiers Journal of Applied Physics. 80: 4174-4176. DOI: 10.1063/1.363290  0.315
1996 Lazzouni ME, Peressi M, Baldereschi A. Valence-band offset at the Si/GaP (110) interface Applied Physics Letters. 68: 75-77. DOI: 10.1063/1.116762  0.403
1995 Massidda S, Continenza A, Posternak M, Baldereschi A. Band-structure picture for MnO reexplored: A model GW calculation. Physical Review Letters. 74: 2323-2326. PMID 10057899 DOI: 10.1103/Physrevlett.74.2323  0.346
1995 Massidda S, Resta R, Posternak M, Baldereschi A. Polarization and dynamical charge of ZnO within different one-particle schemes. Physical Review. B, Condensed Matter. 52: 16977-16980. PMID 9981109 DOI: 10.1103/Physrevb.52.R16977  0.377
1995 Almeida J, Dell'Orto T, Coluzza C, Fasso A, Baldereschi A, Margaritondo G, Rudra A, Buhlmann HJ, Ilegems M. Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study Journal of Applied Physics. 78: 3258-3261. DOI: 10.1063/1.360014  0.343
1995 Papp G, Di Ventra M, Coluzza C, Baldereschi A, Margaritondo G. Current rectification through a single-barrier resonant tunneling quantum structure Superlattices and Microstructures. 17: 273-275. DOI: 10.1006/Spmi.1995.1049  0.341
1994 Nicolini R, Vanzetti L, Mula G, Bratina G, Sorba L, Franciosi A, Peressi M, Baroni S, Resta R, Baldereschi A, Angelo JE, Gerberich WW. Local interface composition and band discontinuities in heterovalent heterostructures. Physical Review Letters. 72: 294-297. PMID 10056108 DOI: 10.1103/Physrevlett.72.294  0.327
1994 Dal Corso A, Posternak M, Resta R, Baldereschi A. Ab initio study of piezoelectricity and spontaneous polarization in ZnO. Physical Review. B, Condensed Matter. 50: 10715-10721. PMID 9975171 DOI: 10.1103/Physrevb.50.10715  0.33
1994 Posternak M, Resta R, Baldereschi A. Role of covalent bonding in the polarization of perovskite oxides: The case of KNbO3. Physical Review. B, Condensed Matter. 50: 8911-8914. PMID 9974925 DOI: 10.1103/Physrevb.50.8911  0.303
1994 dell'Orto T, Almeida J, Coluzza C, Baldereschi A, Margaritondo G, Cantile M, Yildirim S, Sorba L, Franciosi A. Internal photoemission studies of artificial band discontinuities at buried GaAs(100)/GaAs(100) homojunctions Applied Physics Letters. 64: 2111-2113. DOI: 10.1063/1.111699  0.366
1993 Peressi M, Colombo L, Resta R, Baroni S, Baldereschi A. Structural and electronic properties of strained Si/GaAs heterostructures. Physical Review. B, Condensed Matter. 48: 12047-12052. PMID 10007552 DOI: 10.1103/Physrevb.48.12047  0.378
1993 Scandolo S, Baldereschi A, Capasso F. Interband near-infrared second-harmonic generation with very large ∥χ(2)(2ω)∥ in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells Applied Physics Letters. 62: 3138-3140. DOI: 10.1063/1.109107  0.304
1992 Resta R, Posternak M, Baldereschi A. First-Principles Theory of Polarization in Ferroelectrics Mrs Proceedings. 291. DOI: 10.1557/Proc-291-647  0.312
1992 Marsi M, La Rosa S, Hwu Y, Gozzo F, Coluzza C, Baldereschi A, Margaritondo G, McKinley JT, Baroni S, Resta R. Microscopic manipulation of homojunction band lineups Journal of Applied Physics. 71: 2048-2050. DOI: 10.1063/1.351152  0.363
1991 Peressi M, Baroni S, Resta R, Baldereschi A. Tuning band offsets at semiconductor interfaces by intralayer deposition. Physical Review. B, Condensed Matter. 43: 7347-7350. PMID 9998208 DOI: 10.1103/Physrevb.43.7347  0.3
1991 Mäder KA, von Känel H, Baldereschi A. Interface-confined ordering at Si/Ge strained heterojunctions Superlattices and Microstructures. 9: 15-21. DOI: 10.1016/0749-6036(91)90084-5  0.355
1991 von Känel H, Müller E, Nissen HU, Bacsa W, Ospelt M, Mäder KA, Stalder R, Baldereschi A. Silicon heteroepitaxy: interface structure and physical properties Journal of Crystal Growth. 111: 889-896. DOI: 10.1016/0022-0248(91)91102-G  0.361
1990 Pennetta C, Baldereschi A. Quantum behaviour of muons in crystalline silicon Solid State Communications. 76: 825-830. DOI: 10.1016/0038-1098(90)90635-O  0.312
1989 Boguslawski P, Baldereschi A. Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices. Physical Review. B, Condensed Matter. 39: 8055-8058. PMID 9947508 DOI: 10.1103/Physrevb.39.8055  0.368
1989 Resta R, Baroni S, Baldereschi A. Theory of band offsets at semiconductor heterojunctions: An ab-initio linear response approach Superlattices and Microstructures. 6: 31-37. DOI: 10.1016/0749-6036(89)90090-6  0.395
1989 Mäder KA, Baldereschi A, von Känel H. Band structure and instability of Ge1-xSnx alloys Solid State Communications. 69: 1123-1126. DOI: 10.1016/0038-1098(89)91046-6  0.391
1989 Bogusławski P, Baldereschi A. Optical-gap reduction in the ordered phases of GaInAs solid solution Solid State Communications. 70: 1085-1090. DOI: 10.1016/0038-1098(89)90739-4  0.357
1989 Fiorentini V, Baldereschi A. Interpretation of double acceptor spectra in Ge Solid State Communications. 69: 953-958. DOI: 10.1016/0038-1098(89)90003-3  0.351
1988 Baldereschi A, Baroni S, Resta R. Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs. Physical Review Letters. 61: 734-737. PMID 10039416 DOI: 10.1103/Physrevlett.61.734  0.363
1988 Binggeli N, Baldereschi A. Prediction of line intensities and interpretation of acceptor spectra in semiconductors Solid State Communications. 66: 323-328. DOI: 10.1016/0038-1098(88)90849-6  0.342
1988 Massidda S, Baldereschi A. Interlayer states and chemical bonds in hexagonal CaGa2 Solid State Communications. 66: 855-858. DOI: 10.1016/0038-1098(88)90399-7  0.338
1988 Bogusławski P, Baldereschi A. Excess elastic energy and the instability of (GaAs)1(InAs)1(0 0 1), Ga3InAs4, GaIn3As4 and Ga1-xInxAs alloys Solid State Communications. 66: 679-682. DOI: 10.1016/0038-1098(88)90231-1  0.319
1987 Catellani A, Posternak M, Baldereschi A, Freeman AJ. Bulk and surface electronic structure of hexagonal boron nitride. Physical Review. B, Condensed Matter. 36: 6105-6111. PMID 9942294 DOI: 10.1103/Physrevb.36.6105  0.323
1986 Catellani A, Posternak M, Baldereschi A, Jansen HJ, Freeman AJ. Erratum: Electronic interlayer states in hexagonal boron nitride Physical Review. B, Condensed Matter. 34: 5929. PMID 9940443 DOI: 10.1103/Physrevb.34.5929  0.301
1985 Catellani A, Posternak M, Baldereschi A, Jansen HJ, Freeman AJ. Electronic interlayer states in hexagonal boron nitride. Physical Review. B, Condensed Matter. 32: 6997-6999. PMID 9936833 DOI: 10.1103/Physrevb.32.6997  0.392
1982 Posternak M, Baldereschi A, Freeman A, Wimmer E, Weinert M. Free-Electron Interlayer States in Pure and Li-Intercalated Graphite Mrs Proceedings. 20. DOI: 10.1557/Proc-20-117  0.373
1982 Baroni S, Quattropani A, Baldereschi A. Influence of electronic relaxation on core and valence excited states of alkaline-earth atoms Physical Review A. 25: 2869-2876. DOI: 10.1103/Physreva.25.2869  0.328
1982 Pennetta C, Baldereschi A. Migration energy of interstitial ions in Si and Ge Solid State Communications. 44: 1397-1400. DOI: 10.1016/0038-1098(82)90902-4  0.388
1981 Bernholc J, Pantelides ST, Lipari NO, Baldereschi A. The electronic structure of deep SP-bonded acceptor impurities in semiconductors Solid State Communications. 37: 705-708. DOI: 10.1016/0038-1098(81)91082-6  0.321
1981 Baur J, Maschke K, Baldereschi A. Relevance of non-linear screening in covalent semiconductors Solid State Communications. 39: 1297-1300. DOI: 10.1016/0038-1098(81)90230-1  0.302
1981 Baroni S, Quattropani A, Baldereschi A. Rydberg series of valence and core excited inert-gas atoms: Effects of electron relaxation Chemical Physics Letters. 79: 509-512. DOI: 10.1016/0009-2614(81)85025-7  0.337
1979 Baldereschi A, Car R, Tosatti E. Microscopic local fields in dielectrics Solid State Communications. 32: 757-760. DOI: 10.1016/0038-1098(79)90749-X  0.318
1975 Baldereschi A, Maschke K. Band structure of semiconductor alloys beyond the virtual crystal approximation. effect of compositional disorder on the energy gaps in GaPxAs1-x Solid State Communications. 16: 99-102. DOI: 10.1016/0038-1098(75)90799-1  0.338
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