| Year |
Citation |
Score |
| 2017 |
Vesselli E, Rizzi M, Furlan S, Duan X, Monachino E, Dri C, Peronio A, Africh C, Lacovig P, Baldereschi A, Comelli G, Peressi M. Tunability of the CO adsorption energy on a Ni/Cu surface: Site change and coverage effects. The Journal of Chemical Physics. 146: 224707. PMID 29166071 DOI: 10.1063/1.4985657 |
0.301 |
|
| 2015 |
Olmos-Asar JA, Vesselli E, Baldereschi A, Peressi M. Towards optimal seeding for the synthesis of ordered nanoparticle arrays on alumina/Ni3Al(111). Physical Chemistry Chemical Physics : Pccp. PMID 25793457 DOI: 10.1039/C5Cp00304K |
0.301 |
|
| 2014 |
Olmos-Asar JA, Vesselli E, Baldereschi A, Peressi M. Self-seeded nucleation of Cu nanoclusters on Al2O3/Ni3Al(111): an ab initio investigation. Physical Chemistry Chemical Physics : Pccp. 16: 23134-42. PMID 25251210 DOI: 10.1039/C4Cp03271C |
0.316 |
|
| 2013 |
Posternak M, Berner S, Baldereschi A, Delley B. Enhancing hydrophilicity of anatase TiO2 surfaces by deposition of alkaline earths: The case of ca Journal of Physical Chemistry C. 117: 26013-26020. DOI: 10.1021/Jp406817K |
0.304 |
|
| 2010 |
Ouyang CY, Sljivancanin Z, Baldereschi A. Transition from Mn(4+) to Mn(3+) induced by surface reconstruction at λ-MnO(2)(001). The Journal of Chemical Physics. 133: 204701. PMID 21133446 DOI: 10.1063/1.3509401 |
0.362 |
|
| 2010 |
Tomba G, Stengel M, Schneider WD, Baldereschi A, De Vita A. Supramolecular self-assembly driven by electrostatic repulsion: The 1D aggregation of rubrene pentagons on Au111. Acs Nano. 4: 7545-51. PMID 21080665 DOI: 10.1021/Nn101884P |
0.331 |
|
| 2010 |
Dri C, Peronio A, Vesselli E, Africh C, Rizzi M, Baldereschi A, Peressi M, Comelli G. Imaging and characterization of activated CO2 species on Ni(110) Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.165403 |
0.319 |
|
| 2010 |
Stevanović V, Šljivancanin Z, Baldereschi A. Role of adsorbed H, C, O, and CO on the atomic structure of free and MgO(100)-supported Ir4 clusters: An ab initio study Journal of Physical Chemistry C. 114: 15653-15660. DOI: 10.1021/Jp101012B |
0.346 |
|
| 2009 |
Posternak M, Baldereschi A, Delley B. Dissociation of water on anatase TiO2 nanoparticles: The role of undercoordinated Ti atoms at edges Journal of Physical Chemistry C. 113: 15862-15867. DOI: 10.1021/Jp9032113 |
0.34 |
|
| 2008 |
Vesselli E, De Rogatis L, Ding X, Baraldi A, Savio L, Vattuone L, Rocca M, Fornasiero P, Peressi M, Baldereschi A, Rosei R, Comelli G. Carbon dioxide hydrogenation on Ni(110). Journal of the American Chemical Society. 130: 11417-22. PMID 18665600 DOI: 10.1021/Ja802554G |
0.323 |
|
| 2007 |
Stevanovi? V, Sljivancanin Z, Baldereschi A. Effect of carbon adsorption on the isomer stability of Ir4 clusters. Physical Review Letters. 99: 165501. PMID 17995263 DOI: 10.1103/Physrevlett.99.165501 |
0.349 |
|
| 2007 |
Ding X, De Rogatis L, Vesselli E, Baraldi A, Comelli G, Rosei R, Savio L, Vattuone L, Rocca M, Fornasiero P, Ancilotto F, Baldereschi A, Peressi M. Interaction of carbon dioxide with Ni(110): A combined experimental and theoretical study Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.195425 |
0.336 |
|
| 2006 |
Šljivančanin Z, Popović ZS, Vukajlović FR, Baldereschi A. Atomic structure and spin magnetism of self-assembled Co nanowires on Pt(332) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.134412 |
0.357 |
|
| 2006 |
Debernardi A, Baldereschi A, Fanciulli M. Computation of the Stark effect in P impurity states in silicon Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.035202 |
0.341 |
|
| 2005 |
Debernardi A, Peressi M, Baldereschi A. Spin polarization and band alignments at NiMnSb/GaAs interface Computational Materials Science. 33: 263-268. DOI: 10.1016/J.Commatsci.2004.12.048 |
0.372 |
|
| 2004 |
Cangiani G, Baldereschi A, Posternak M, Krakauer H. Born charge differences of TiO2 polytypes: Multipole expansion of Wannier charge densities Physical Review B - Condensed Matter and Materials Physics. 69: 1211011-1211014. DOI: 10.1103/Physrevb.69.121101 |
0.348 |
|
| 2004 |
Sgiarovello C, Binggeli N, Baldereschi A. Surface morphology and ionization potentials of polar semiconductors: The case of GaAs Physical Review B - Condensed Matter and Materials Physics. 69: 353201-353208. DOI: 10.1103/Physrevb.69.035320 |
0.325 |
|
| 2004 |
Pelucchi E, Rubini S, Bonanni B, Franciosi A, Zaoui A, Peressi M, Baldereschi A, De Salvador D, Berti M, Drigo A, Romanato F. Structural and electronic properties of wide band gap Zn 1-xMgxSe alloys Journal of Applied Physics. 95: 4184-4192. DOI: 10.1063/1.1682688 |
0.366 |
|
| 2004 |
Vladimirova M, Trimarchi G, Baldereschi A, Weckesser J, Kern K, Barth JV, De Vita A. Substrate-induced supramolecular ordering of functional molecules: Theoretical modelling and STM investigation of the PEBA/Ag(1 1 1) system Acta Materialia. 52: 1589-1595. DOI: 10.1016/J.Actamat.2003.12.004 |
0.349 |
|
| 2003 |
Berthod C, Binggeli N, Baldereschi A. Schottky barrier heights at polar metal/semiconductor interfaces Physical Review B - Condensed Matter and Materials Physics. 68: 853231-8532311. DOI: 10.1103/Physrevb.68.085323 |
0.36 |
|
| 2003 |
Maxisch T, Binggeli N, Baldereschi A. Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions Physical Review B - Condensed Matter and Materials Physics. 67: 1253151-1253156. DOI: 10.1103/Physrevb.67.125315 |
0.415 |
|
| 2003 |
Debernardi A, Peressi M, Baldereschi A. Electronic properties of Mn compounds under strain Computational Materials Science. 27: 175-180. DOI: 10.1016/S0927-0256(02)00442-1 |
0.31 |
|
| 2003 |
Maxisch T, Baldereschi A, Binggeli N. Midgap interface states at epitaxial Al/AlAs(001) heterojunctions Solid State Communications. 126: 265-268. DOI: 10.1016/S0038-1098(03)00109-1 |
0.409 |
|
| 2003 |
Debernardi A, Peressi M, Baldereschi A. Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs Materials Science and Engineering C. 23: 743-746. DOI: 10.1016/J.Msec.2003.09.074 |
0.395 |
|
| 2002 |
Fall CJ, Binggeli N, Baldereschi A. Work functions and surface charges at metallic facet edges Physical Review B - Condensed Matter and Materials Physics. 66: 754051-7540510. DOI: 10.1103/Physrevb.66.075405 |
0.372 |
|
| 2002 |
Posternak M, Baldereschi A, Massidda S, Marzari N. Maximally localized Wannier functions in antiferromagnetic MnO within the FLAWPW formalism Physical Review B - Condensed Matter and Materials Physics. 65: 1844221-18442211. DOI: 10.1103/Physrevb.65.184422 |
0.531 |
|
| 2002 |
Haerle R, Riedo E, Pasquarello A, Baldereschi A. sp2/sp3 hybridization ratio in amorphous carbon from C 1s core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation Physical Review B - Condensed Matter and Materials Physics. 65: 451011-451019. DOI: 10.1103/Physrevb.65.045101 |
0.367 |
|
| 2002 |
Peressi M, Favot F, Cangiani G, Baldereschi A. Interface states at ZnSe/Ge heterojunctions: The role of atomic interdiffusion and disorder Applied Physics Letters. 81: 5171-5173. DOI: 10.1063/1.1532555 |
0.381 |
|
| 2001 |
Sgiarovello C, Binggeli N, Baldereschi A. Influence of surface morphology on the Si(100) and (111) ionization potentials Physical Review B - Condensed Matter and Materials Physics. 64: 1953051-1953057. DOI: 10.1103/Physrevb.64.195305 |
0.312 |
|
| 2001 |
Binggeli N, Ferrara P, Baldereschi A. Band-offset trends in nitride heterojunctions Physical Review B - Condensed Matter and Materials Physics. 63: 2453061-24530613. DOI: 10.1103/Physrevb.63.245306 |
0.389 |
|
| 2001 |
Rubini S, Pelucchi E, Lazzarino M, Kumar D, Franciosi A, Berthod C, Binggeli N, Baldereschi A. Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) Physical Review B - Condensed Matter and Materials Physics. 63: 2353071-2353078. DOI: 10.1103/Physrevb.63.235307 |
0.349 |
|
| 2001 |
Favot F, Dal Corso A, Baldereschi A. CO adsorbed on Cu(001): A comparison between local density approximation and Perdew, Burke, and Ernezerhof generalized gradient approximation Journal of Chemical Physics. 114: 483-488. DOI: 10.1063/1.1328042 |
0.336 |
|
| 2001 |
Haerle R, Pasquarello A, Baldereschi A. First-principle study of C 1s core-level shifts in amorphous carbon Computational Materials Science. 22: 67-72. DOI: 10.1016/S0927-0256(01)00167-7 |
0.348 |
|
| 2001 |
Fornari M, Marzari N, Peressi M, Baldereschi A. Wannier functions characterization of floating bonds in a-Si Computational Materials Science. 20: 337-342. DOI: 10.1016/S0927-0256(00)00191-9 |
0.583 |
|
| 2000 |
Favot F, Dal Corso A, Baldereschi A. Adsorption geometry of benzene on Pd(110): Results of first-principles calculations Europhysics Letters. 52: 698-704. DOI: 10.1209/Epl/I2000-00494-8 |
0.323 |
|
| 2000 |
Berthod C, Binggeli N, Baldereschi A. Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2114-2118. DOI: 10.1116/1.1303734 |
0.366 |
|
| 2000 |
Fall CJ, Binggeli N, Baldereschi A. Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure Physical Review B - Condensed Matter and Materials Physics. 61: 8489-8495. DOI: 10.1103/Physrevb.61.8489 |
0.338 |
|
| 2000 |
Bardi J, Binggeli N, Baldereschi A. Existence of localized interface states in meta/GaAs(100) junctions: Au versus Al contacts Physical Review B - Condensed Matter and Materials Physics. 61: 5416-5422. DOI: 10.1103/Physrevb.61.5416 |
0.315 |
|
| 2000 |
Peressi M, Fornari M, De Gironcoli S, De Santis L, Baldereschi A. Coordination defects in amorphous silicon and hydrogenated amorphous silicon: A characterization from first-principles calculations Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 80: 515-521. DOI: 10.1080/13642810008209759 |
0.347 |
|
| 2000 |
Haerle R, Baldereschi A, Galli G. Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamics Journal of Non-Crystalline Solids. 266: 740-745. DOI: 10.1016/S0022-3093(99)00793-0 |
0.351 |
|
| 1999 |
Favot F, Dal Corso A, Baldereschi A. Ab-initio study of the structure of Pd(110)-c(4 × 2)-benzene Surface Review and Letters. 6: 903-906. DOI: 10.1142/S0218625X99000962 |
0.313 |
|
| 1999 |
Fall CJ, Binggeli N, Baldereschi A. Deriving accurate work functions from thin-slab calculations Journal of Physics Condensed Matter. 11: 2689-2696. DOI: 10.1088/0953-8984/11/13/006 |
0.363 |
|
| 1999 |
Haerle R, Galli G, Baldereschi A. Structural models of amorphous carbon surfaces Applied Physics Letters. 75: 1718-1720. DOI: 10.1063/1.124836 |
0.33 |
|
| 1998 |
Fall CJ, Binggeli N, Baldereschi A. Anomaly in the anisotropy of the aluminum work function Physical Review B - Condensed Matter and Materials Physics. 58: R7544-R7547. DOI: 10.1103/Physrevb.58.R7544 |
0.335 |
|
| 1998 |
Fernández P, Dal Corso A, Baldereschi A. Ab initio study of the dielectric properties of silicon and gallium arsenide using polarized Wannier functions Physical Review B - Condensed Matter and Materials Physics. 58: R7480-R7483. DOI: 10.1103/Physrevb.58.R7480 |
0.302 |
|
| 1998 |
Berthod C, Binggeli N, Baldereschi A. Formation energy, lattice relaxation, and electronic structure of Al/Si/GaAs(100) junctions Physical Review B - Condensed Matter and Materials Physics. 57: 9757-9762. DOI: 10.1103/Physrevb.57.9757 |
0.372 |
|
| 1998 |
Di Ventra M, Baldereschi A. Near-band-edge resonant states of AIAs monolayers embedded in bulk GaAs: The role of d symmetries Physical Review B - Condensed Matter and Materials Physics. 57: 3733-3736. DOI: 10.1103/Physrevb.57.3733 |
0.333 |
|
| 1998 |
Bitz A, Di Ventra M, Baldereschi A, Staehli J, Pietag F, Gottschalch V, Rhan H, Schwabe R. Optical properties of ultrathin GaAs layers embedded in AlxGa1-xAs Physical Review B - Condensed Matter and Materials Physics. 57: 2426-2430. DOI: 10.1103/Physrevb.57.2426 |
0.304 |
|
| 1998 |
Peressi M, Binggeli N, Baldereschi A. Band engineering at interfaces: Theory and numerical experiments Journal of Physics D: Applied Physics. 31: 1273-1299. DOI: 10.1088/0022-3727/31/11/002 |
0.332 |
|
| 1997 |
Binggeli N, Ferrara P, Baldereschi A. Band Offsets In GaN/AlN and AlN/SiC Heterojunctions Mrs Proceedings. 482. DOI: 10.1557/Proc-482-911 |
0.395 |
|
| 1997 |
Dal Corso A, Baldereschi A. Ab initio study of the structural and electronic properties of adsorbates: CO on Cu(001) Surface Review and Letters. 4: 885-889. DOI: 10.1142/S0218625X97000973 |
0.343 |
|
| 1997 |
Dal Corso A, Pasquarello A, Baldereschi A. Density-functional perturbation theory for lattice dynamics with ultrasoft pseudopotentials Physical Review B - Condensed Matter and Materials Physics. 56: R11369-R11372. DOI: 10.1103/Physrevb.56.R11369 |
0.337 |
|
| 1997 |
Ferrara P, Binggeli N, Baldereschi A. Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures Physical Review B. 55: R7418-R7426. DOI: 10.1103/Physrevb.55.R7418 |
0.414 |
|
| 1997 |
Fernández P, Dal Corso A, Baldereschi A, Mauri F. First-principles Wannier functions of silicon and gallium arsenide Physical Review B - Condensed Matter and Materials Physics. 55: R1909-R1913. DOI: 10.1103/Physrevb.55.R1909 |
0.385 |
|
| 1996 |
Di Ventra M, Peressi M, Baldereschi A. Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions. Physical Review. B, Condensed Matter. 54: 5691-5695. PMID 9986532 DOI: 10.1103/Physrevb.54.5691 |
0.349 |
|
| 1996 |
Bardi J, Binggeli N, Baldereschi A. Pressure and alloy-composition dependence of Al/Ga1-xAlxAs (100) Schottky barriers. Physical Review. B, Condensed Matter. 54: R11102-R11105. PMID 9984996 DOI: 10.1103/Physrevb.54.R11102 |
0.331 |
|
| 1996 |
Dal Corso A, Pasquarello A, Baldereschi A, Car R. Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids. Physical Review. B, Condensed Matter. 53: 1180-1185. PMID 9983574 DOI: 10.1103/Physrevb.53.1180 |
0.395 |
|
| 1996 |
Berthod C, Binggeli N, Baldereschi A. Local interface dipoles cind the tuning of the Al/GaAs(100) Schottky-barrier height with ultrathin Si interlayers Europhysics Letters. 36: 67-72. DOI: 10.1209/Epl/I1996-00188-3 |
0.389 |
|
| 1996 |
Berthod C, Bardi J, Binggeli N, Baldereschi A. Schottky barrier tuning at Al/GaAs(100) junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3000-3007. DOI: 10.1116/1.588949 |
0.394 |
|
| 1996 |
Ventra MD, Peressi M, Baldereschi A. Role of structural and chemical contributions to valence‐band offsets at strained‐layer heterojunctions: The GaAs/GaP (001) case Journal of Vacuum Science & Technology B. 14: 2936-2939. DOI: 10.1116/1.588937 |
0.363 |
|
| 1996 |
Di Ventra M, Papp G, Coluzza C, Baldereschi A, Schulz PA. Indented barrier resonant tunneling rectifiers Journal of Applied Physics. 80: 4174-4176. DOI: 10.1063/1.363290 |
0.315 |
|
| 1996 |
Lazzouni ME, Peressi M, Baldereschi A. Valence-band offset at the Si/GaP (110) interface Applied Physics Letters. 68: 75-77. DOI: 10.1063/1.116762 |
0.403 |
|
| 1995 |
Massidda S, Continenza A, Posternak M, Baldereschi A. Band-structure picture for MnO reexplored: A model GW calculation. Physical Review Letters. 74: 2323-2326. PMID 10057899 DOI: 10.1103/Physrevlett.74.2323 |
0.346 |
|
| 1995 |
Massidda S, Resta R, Posternak M, Baldereschi A. Polarization and dynamical charge of ZnO within different one-particle schemes. Physical Review. B, Condensed Matter. 52: 16977-16980. PMID 9981109 DOI: 10.1103/Physrevb.52.R16977 |
0.377 |
|
| 1995 |
Almeida J, Dell'Orto T, Coluzza C, Fasso A, Baldereschi A, Margaritondo G, Rudra A, Buhlmann HJ, Ilegems M. Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study Journal of Applied Physics. 78: 3258-3261. DOI: 10.1063/1.360014 |
0.343 |
|
| 1995 |
Papp G, Di Ventra M, Coluzza C, Baldereschi A, Margaritondo G. Current rectification through a single-barrier resonant tunneling quantum structure Superlattices and Microstructures. 17: 273-275. DOI: 10.1006/Spmi.1995.1049 |
0.341 |
|
| 1994 |
Nicolini R, Vanzetti L, Mula G, Bratina G, Sorba L, Franciosi A, Peressi M, Baroni S, Resta R, Baldereschi A, Angelo JE, Gerberich WW. Local interface composition and band discontinuities in heterovalent heterostructures. Physical Review Letters. 72: 294-297. PMID 10056108 DOI: 10.1103/Physrevlett.72.294 |
0.327 |
|
| 1994 |
Dal Corso A, Posternak M, Resta R, Baldereschi A. Ab initio study of piezoelectricity and spontaneous polarization in ZnO. Physical Review. B, Condensed Matter. 50: 10715-10721. PMID 9975171 DOI: 10.1103/Physrevb.50.10715 |
0.33 |
|
| 1994 |
Posternak M, Resta R, Baldereschi A. Role of covalent bonding in the polarization of perovskite oxides: The case of KNbO3. Physical Review. B, Condensed Matter. 50: 8911-8914. PMID 9974925 DOI: 10.1103/Physrevb.50.8911 |
0.303 |
|
| 1994 |
dell'Orto T, Almeida J, Coluzza C, Baldereschi A, Margaritondo G, Cantile M, Yildirim S, Sorba L, Franciosi A. Internal photoemission studies of artificial band discontinuities at buried GaAs(100)/GaAs(100) homojunctions Applied Physics Letters. 64: 2111-2113. DOI: 10.1063/1.111699 |
0.366 |
|
| 1993 |
Peressi M, Colombo L, Resta R, Baroni S, Baldereschi A. Structural and electronic properties of strained Si/GaAs heterostructures. Physical Review. B, Condensed Matter. 48: 12047-12052. PMID 10007552 DOI: 10.1103/Physrevb.48.12047 |
0.378 |
|
| 1993 |
Scandolo S, Baldereschi A, Capasso F. Interband near-infrared second-harmonic generation with very large ∥χ(2)(2ω)∥ in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells Applied Physics Letters. 62: 3138-3140. DOI: 10.1063/1.109107 |
0.304 |
|
| 1992 |
Resta R, Posternak M, Baldereschi A. First-Principles Theory of Polarization in Ferroelectrics Mrs Proceedings. 291. DOI: 10.1557/Proc-291-647 |
0.312 |
|
| 1992 |
Marsi M, La Rosa S, Hwu Y, Gozzo F, Coluzza C, Baldereschi A, Margaritondo G, McKinley JT, Baroni S, Resta R. Microscopic manipulation of homojunction band lineups Journal of Applied Physics. 71: 2048-2050. DOI: 10.1063/1.351152 |
0.363 |
|
| 1991 |
Peressi M, Baroni S, Resta R, Baldereschi A. Tuning band offsets at semiconductor interfaces by intralayer deposition. Physical Review. B, Condensed Matter. 43: 7347-7350. PMID 9998208 DOI: 10.1103/Physrevb.43.7347 |
0.3 |
|
| 1991 |
Mäder KA, von Känel H, Baldereschi A. Interface-confined ordering at Si/Ge strained heterojunctions Superlattices and Microstructures. 9: 15-21. DOI: 10.1016/0749-6036(91)90084-5 |
0.355 |
|
| 1991 |
von Känel H, Müller E, Nissen HU, Bacsa W, Ospelt M, Mäder KA, Stalder R, Baldereschi A. Silicon heteroepitaxy: interface structure and physical properties Journal of Crystal Growth. 111: 889-896. DOI: 10.1016/0022-0248(91)91102-G |
0.361 |
|
| 1990 |
Pennetta C, Baldereschi A. Quantum behaviour of muons in crystalline silicon Solid State Communications. 76: 825-830. DOI: 10.1016/0038-1098(90)90635-O |
0.312 |
|
| 1989 |
Boguslawski P, Baldereschi A. Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices. Physical Review. B, Condensed Matter. 39: 8055-8058. PMID 9947508 DOI: 10.1103/Physrevb.39.8055 |
0.368 |
|
| 1989 |
Resta R, Baroni S, Baldereschi A. Theory of band offsets at semiconductor heterojunctions: An ab-initio linear response approach Superlattices and Microstructures. 6: 31-37. DOI: 10.1016/0749-6036(89)90090-6 |
0.395 |
|
| 1989 |
Mäder KA, Baldereschi A, von Känel H. Band structure and instability of Ge1-xSnx alloys Solid State Communications. 69: 1123-1126. DOI: 10.1016/0038-1098(89)91046-6 |
0.391 |
|
| 1989 |
Bogusławski P, Baldereschi A. Optical-gap reduction in the ordered phases of GaInAs solid solution Solid State Communications. 70: 1085-1090. DOI: 10.1016/0038-1098(89)90739-4 |
0.357 |
|
| 1989 |
Fiorentini V, Baldereschi A. Interpretation of double acceptor spectra in Ge Solid State Communications. 69: 953-958. DOI: 10.1016/0038-1098(89)90003-3 |
0.351 |
|
| 1988 |
Baldereschi A, Baroni S, Resta R. Band offsets in lattice-matched heterojunctions: A model and first-principles calculations for GaAs/AlAs. Physical Review Letters. 61: 734-737. PMID 10039416 DOI: 10.1103/Physrevlett.61.734 |
0.363 |
|
| 1988 |
Binggeli N, Baldereschi A. Prediction of line intensities and interpretation of acceptor spectra in semiconductors Solid State Communications. 66: 323-328. DOI: 10.1016/0038-1098(88)90849-6 |
0.342 |
|
| 1988 |
Massidda S, Baldereschi A. Interlayer states and chemical bonds in hexagonal CaGa2 Solid State Communications. 66: 855-858. DOI: 10.1016/0038-1098(88)90399-7 |
0.338 |
|
| 1988 |
Bogusławski P, Baldereschi A. Excess elastic energy and the instability of (GaAs)1(InAs)1(0 0 1), Ga3InAs4, GaIn3As4 and Ga1-xInxAs alloys Solid State Communications. 66: 679-682. DOI: 10.1016/0038-1098(88)90231-1 |
0.319 |
|
| 1987 |
Catellani A, Posternak M, Baldereschi A, Freeman AJ. Bulk and surface electronic structure of hexagonal boron nitride. Physical Review. B, Condensed Matter. 36: 6105-6111. PMID 9942294 DOI: 10.1103/Physrevb.36.6105 |
0.323 |
|
| 1986 |
Catellani A, Posternak M, Baldereschi A, Jansen HJ, Freeman AJ. Erratum: Electronic interlayer states in hexagonal boron nitride Physical Review. B, Condensed Matter. 34: 5929. PMID 9940443 DOI: 10.1103/Physrevb.34.5929 |
0.301 |
|
| 1985 |
Catellani A, Posternak M, Baldereschi A, Jansen HJ, Freeman AJ. Electronic interlayer states in hexagonal boron nitride. Physical Review. B, Condensed Matter. 32: 6997-6999. PMID 9936833 DOI: 10.1103/Physrevb.32.6997 |
0.392 |
|
| 1982 |
Posternak M, Baldereschi A, Freeman A, Wimmer E, Weinert M. Free-Electron Interlayer States in Pure and Li-Intercalated Graphite Mrs Proceedings. 20. DOI: 10.1557/Proc-20-117 |
0.373 |
|
| 1982 |
Baroni S, Quattropani A, Baldereschi A. Influence of electronic relaxation on core and valence excited states of alkaline-earth atoms Physical Review A. 25: 2869-2876. DOI: 10.1103/Physreva.25.2869 |
0.328 |
|
| 1982 |
Pennetta C, Baldereschi A. Migration energy of interstitial ions in Si and Ge Solid State Communications. 44: 1397-1400. DOI: 10.1016/0038-1098(82)90902-4 |
0.388 |
|
| 1981 |
Bernholc J, Pantelides ST, Lipari NO, Baldereschi A. The electronic structure of deep SP-bonded acceptor impurities in semiconductors Solid State Communications. 37: 705-708. DOI: 10.1016/0038-1098(81)91082-6 |
0.321 |
|
| 1981 |
Baur J, Maschke K, Baldereschi A. Relevance of non-linear screening in covalent semiconductors Solid State Communications. 39: 1297-1300. DOI: 10.1016/0038-1098(81)90230-1 |
0.302 |
|
| 1981 |
Baroni S, Quattropani A, Baldereschi A. Rydberg series of valence and core excited inert-gas atoms: Effects of electron relaxation Chemical Physics Letters. 79: 509-512. DOI: 10.1016/0009-2614(81)85025-7 |
0.337 |
|
| 1979 |
Baldereschi A, Car R, Tosatti E. Microscopic local fields in dielectrics Solid State Communications. 32: 757-760. DOI: 10.1016/0038-1098(79)90749-X |
0.318 |
|
| 1975 |
Baldereschi A, Maschke K. Band structure of semiconductor alloys beyond the virtual crystal approximation. effect of compositional disorder on the energy gaps in GaPxAs1-x Solid State Communications. 16: 99-102. DOI: 10.1016/0038-1098(75)90799-1 |
0.338 |
|
| Show low-probability matches. |