Alfonso Baldereschi - Publications

Affiliations: 
École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland 

140 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Vesselli E, Rizzi M, Furlan S, Duan X, Monachino E, Dri C, Peronio A, Africh C, Lacovig P, Baldereschi A, Comelli G, Peressi M. Tunability of the CO adsorption energy on a Ni/Cu surface: Site change and coverage effects. The Journal of Chemical Physics. 146: 224707. PMID 29166071 DOI: 10.1063/1.4985657  0.48
2015 Olmos-Asar JA, Vesselli E, Baldereschi A, Peressi M. Towards optimal seeding for the synthesis of ordered nanoparticle arrays on alumina/Ni3Al(111). Physical Chemistry Chemical Physics : Pccp. PMID 25793457 DOI: 10.1039/C5Cp00304K  0.36
2015 Olmos-Asar JA, Monachino E, Dri C, Peronio A, Africh C, Lacovig P, Comelli G, Baldereschi A, Peressi M, Vesselli E. CO on supported Cu nanoclusters: Coverage and finite size contributions to the formation of carbide via the boudouard process Acs Catalysis. 5: 2719-2726. DOI: 10.1021/Cs501361H  0.36
2014 Olmos-Asar JA, Vesselli E, Baldereschi A, Peressi M. Self-seeded nucleation of Cu nanoclusters on Al2O3/Ni3Al(111): an ab initio investigation. Physical Chemistry Chemical Physics : Pccp. 16: 23134-42. PMID 25251210 DOI: 10.1039/C4Cp03271C  0.36
2013 Posternak M, Berner S, Baldereschi A, Delley B. Enhancing hydrophilicity of anatase TiO2 surfaces by deposition of alkaline earths: The case of ca Journal of Physical Chemistry C. 117: 26013-26020. DOI: 10.1021/Jp406817K  0.36
2013 Vesselli E, Monachino E, Rizzi M, Furlan S, Duan X, Dri C, Peronio A, Africh C, Lacovig P, Baldereschi A, Comelli G, Peressi M. Steering the chemistry of carbon oxides on a NiCu catalyst Acs Catalysis. 3: 1555-1559. DOI: 10.1021/Cs400327Y  0.36
2013 Peressi M, Baldereschi A. Ab initio Studies of Structural and Electronic Properties Characterization of Semiconductor Heterostructures and Nanostructures: Second Edition. 21-73. DOI: 10.1016/B978-0-444-59551-5.00002-9  0.36
2012 Rizzi M, Furlan S, Peressi M, Baldereschi A, Dri C, Peronio A, Africh C, Lacovig P, Vesselli E, Comelli G. Tailoring bimetallic alloy surface properties by kinetic control of self-diffusion processes at the nanoscale. Journal of the American Chemical Society. 134: 16827-33. PMID 22989103 DOI: 10.1021/Ja307294P  0.36
2010 Ouyang CY, Sljivancanin Z, Baldereschi A. Transition from Mn(4+) to Mn(3+) induced by surface reconstruction at λ-MnO(2)(001). The Journal of Chemical Physics. 133: 204701. PMID 21133446 DOI: 10.1063/1.3509401  0.36
2010 Tomba G, Stengel M, Schneider WD, Baldereschi A, De Vita A. Supramolecular self-assembly driven by electrostatic repulsion: The 1D aggregation of rubrene pentagons on Au111. Acs Nano. 4: 7545-51. PMID 21080665 DOI: 10.1021/Nn101884P  0.36
2010 Dri C, Peronio A, Vesselli E, Africh C, Rizzi M, Baldereschi A, Peressi M, Comelli G. Imaging and characterization of activated CO2 species on Ni(110) Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.165403  0.36
2010 Vukajlović FR, Popović ZS, Baldereschi A, Šljivančanin Z. Effect of adsorbed H atoms on magnetism in monoatomic Fe wires at Ir(100) Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.085425  0.36
2010 Vesselli E, Rizzi M, de Rogatis L, Ding X, Baraldi A, Comelli G, Savio L, Vattuone L, Rocca M, Fornasiero P, Baldereschi A, Peressi M. Hydrogen-assisted transformation of CO 2 on nickel: The role of formate and carbon monoxide Journal of Physical Chemistry Letters. 1: 402-406. DOI: 10.1021/Jz900221C  0.36
2010 Ouyang CY, Zeng XM, Šljivancanin Z, Baldereschi A. Oxidation states of Mn atoms at clean and Al2O 3-covered LiMn2O4(001) surfaces Journal of Physical Chemistry C. 114: 4756-4759. DOI: 10.1021/jp911746g  0.36
2010 Stevanović V, Šljivancanin Z, Baldereschi A. Role of adsorbed H, C, O, and CO on the atomic structure of free and MgO(100)-supported Ir4 clusters: An ab initio study Journal of Physical Chemistry C. 114: 15653-15660. DOI: 10.1021/Jp101012B  0.36
2009 Ouyang CY, Šljivančanin Z, Baldereschi A. First-principles study of γ -Al2 O3 (100) surface Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.235410  0.36
2009 Posternak M, Baldereschi A, Delley B. Dissociation of water on anatase TiO2 nanoparticles: The role of undercoordinated Ti atoms at edges Journal of Physical Chemistry C. 113: 15862-15867. DOI: 10.1021/Jp9032113  0.36
2008 Vesselli E, De Rogatis L, Ding X, Baraldi A, Savio L, Vattuone L, Rocca M, Fornasiero P, Peressi M, Baldereschi A, Rosei R, Comelli G. Carbon dioxide hydrogenation on Ni(110). Journal of the American Chemical Society. 130: 11417-22. PMID 18665600 DOI: 10.1021/Ja802554G  0.36
2007 Stevanovi? V, Sljivancanin Z, Baldereschi A. Effect of carbon adsorption on the isomer stability of Ir4 clusters. Physical Review Letters. 99: 165501. PMID 17995263 DOI: 10.1103/Physrevlett.99.165501  0.36
2007 Ding X, De Rogatis L, Vesselli E, Baraldi A, Comelli G, Rosei R, Savio L, Vattuone L, Rocca M, Fornasiero P, Ancilotto F, Baldereschi A, Peressi M. Interaction of carbon dioxide with Ni(110): A combined experimental and theoretical study Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.195425  0.36
2006 Šljivančanin Z, Popović ZS, Vukajlović FR, Baldereschi A. Atomic structure and spin magnetism of self-assembled Co nanowires on Pt(332) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.134412  0.36
2006 Posternak M, Baldereschi A, Walter EJ, Krakauer H. Wannier functions and Born charge tensors of brookite Ti O2 Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.125113  0.36
2006 Debernardi A, Baldereschi A, Fanciulli M. Computation of the Stark effect in P impurity states in silicon Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.035202  0.48
2005 Pivetta M, Patthey F, Stengel M, Baldereschi A, Schneider WD. Local work function Moiré pattern on ultrathin ionic films: NaCl on Ag(100) Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.115404  0.48
2005 Debernardi A, Peressi M, Baldereschi A. Spin polarization and band alignments at NiMnSb/GaAs interface Computational Materials Science. 33: 263-268. DOI: 10.1016/J.Commatsci.2004.12.048  0.48
2004 Cangiani G, Baldereschi A, Posternak M, Krakauer H. Born charge differences of TiO2 polytypes: Multipole expansion of Wannier charge densities Physical Review B - Condensed Matter and Materials Physics. 69: 1211011-1211014. DOI: 10.1103/Physrevb.69.121101  0.36
2004 Sgiarovello C, Binggeli N, Baldereschi A. Surface morphology and ionization potentials of polar semiconductors: The case of GaAs Physical Review B - Condensed Matter and Materials Physics. 69: 353201-353208. DOI: 10.1103/Physrevb.69.035320  0.36
2004 Pelucchi E, Rubini S, Bonanni B, Franciosi A, Zaoui A, Peressi M, Baldereschi A, De Salvador D, Berti M, Drigo A, Romanato F. Structural and electronic properties of wide band gap Zn 1-xMgxSe alloys Journal of Applied Physics. 95: 4184-4192. DOI: 10.1063/1.1682688  0.36
2004 Vladimirova M, Trimarchi G, Baldereschi A, Weckesser J, Kern K, Barth JV, De Vita A. Substrate-induced supramolecular ordering of functional molecules: Theoretical modelling and STM investigation of the PEBA/Ag(1 1 1) system Acta Materialia. 52: 1589-1595. DOI: 10.1016/J.Actamat.2003.12.004  0.36
2003 Berthod C, Binggeli N, Baldereschi A. Schottky barrier heights at polar metal/semiconductor interfaces Physical Review B - Condensed Matter and Materials Physics. 68: 853231-8532311. DOI: 10.1103/Physrevb.68.085323  0.36
2003 Maxisch T, Binggeli N, Baldereschi A. Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions Physical Review B - Condensed Matter and Materials Physics. 67: 1253151-1253156. DOI: 10.1103/Physrevb.67.125315  0.36
2003 Debernardi A, Peressi M, Baldereschi A. Electronic properties of Mn compounds under strain Computational Materials Science. 27: 175-180. DOI: 10.1016/S0927-0256(02)00442-1  0.36
2003 Maxisch T, Baldereschi A, Binggeli N. Midgap interface states at epitaxial Al/AlAs(001) heterojunctions Solid State Communications. 126: 265-268. DOI: 10.1016/S0038-1098(03)00109-1  0.36
2003 Debernardi A, Peressi M, Baldereschi A. Magnetic phase transition in strained MnAs compound Materials Science and Engineering C. 23: 1059-1062. DOI: 10.1016/J.Msec.2003.09.155  0.36
2003 Debernardi A, Peressi M, Baldereschi A. Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs Materials Science and Engineering C. 23: 743-746. DOI: 10.1016/J.Msec.2003.09.074  0.36
2003 Stengel M, De Vita A, Baldereschi A. Adatom-Vacancy Mechanisms for the C60/Al(111)-(6 × 6) Reconstruction Physical Review Letters. 91: 1661011-1661014.  0.36
2002 Fall CJ, Binggeli N, Baldereschi A. Work functions at facet edges. Physical Review Letters. 88: 156802. PMID 11955212  0.36
2002 Fall CJ, Binggeli N, Baldereschi A. Work functions and surface charges at metallic facet edges Physical Review B - Condensed Matter and Materials Physics. 66: 754051-7540510. DOI: 10.1103/Physrevb.66.075405  0.36
2002 Posternak M, Baldereschi A, Massidda S, Marzari N. Maximally localized Wannier functions in antiferromagnetic MnO within the FLAWPW formalism Physical Review B - Condensed Matter and Materials Physics. 65: 1844221-18442211. DOI: 10.1103/Physrevb.65.184422  0.36
2002 Fall CJ, Binggeli N, Baldereschi A. Theoretical maps of work-function anisotropies Physical Review B - Condensed Matter and Materials Physics. 65: 454011-454016. DOI: 10.1103/Physrevb.65.045401  0.48
2002 Haerle R, Riedo E, Pasquarello A, Baldereschi A. sp2/sp3 hybridization ratio in amorphous carbon from C 1s core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation Physical Review B - Condensed Matter and Materials Physics. 65: 451011-451019. DOI: 10.1103/Physrevb.65.045101  0.36
2002 Peressi M, Favot F, Cangiani G, Baldereschi A. Interface states at ZnSe/Ge heterojunctions: The role of atomic interdiffusion and disorder Applied Physics Letters. 81: 5171-5173. DOI: 10.1063/1.1532555  0.36
2001 Vladimirova M, Stengel M, De Vita A, Baldereschi A, Böhringer M, Morgenstern K, Berndt R, Schneider WD. Supramolecular self-assembly and selective step decoration on the Au(111) surface Europhysics Letters. 56: 254-260. DOI: 10.1209/Epl/I2001-00514-3  0.36
2001 Sgiarovello C, Binggeli N, Baldereschi A. Influence of surface morphology on the Si(100) and (111) ionization potentials Physical Review B - Condensed Matter and Materials Physics. 64: 1953051-1953057. DOI: 10.1103/Physrevb.64.195305  0.36
2001 Binggeli N, Ferrara P, Baldereschi A. Band-offset trends in nitride heterojunctions Physical Review B - Condensed Matter and Materials Physics. 63: 2453061-24530613. DOI: 10.1103/Physrevb.63.245306  0.36
2001 Rubini S, Pelucchi E, Lazzarino M, Kumar D, Franciosi A, Berthod C, Binggeli N, Baldereschi A. Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) Physical Review B - Condensed Matter and Materials Physics. 63: 2353071-2353078. DOI: 10.1103/Physrevb.63.235307  0.36
2001 Favot F, Dal Corso A, Baldereschi A. Ab initio study of CO adsorption on Ni(110): Effects on surface magnetism at low coverage Physical Review B - Condensed Matter and Materials Physics. 63: 1154161-1154165. DOI: 10.1103/Physrevb.63.115416  0.36
2001 Favot F, Dal Corso A, Baldereschi A. CO adsorbed on Cu(001): A comparison between local density approximation and Perdew, Burke, and Ernezerhof generalized gradient approximation Journal of Chemical Physics. 114: 483-488. DOI: 10.1063/1.1328042  0.36
2001 Haerle R, Pasquarello A, Baldereschi A. First-principle study of C 1s core-level shifts in amorphous carbon Computational Materials Science. 22: 67-72. DOI: 10.1016/S0927-0256(01)00167-7  0.36
2001 Fornari M, Marzari N, Peressi M, Baldereschi A. Wannier functions characterization of floating bonds in a-Si Computational Materials Science. 20: 337-342. DOI: 10.1016/S0927-0256(00)00191-9  0.48
2000 Favot F, Dal Corso A, Baldereschi A. Adsorption geometry of benzene on Pd(110): Results of first-principles calculations Europhysics Letters. 52: 698-704. DOI: 10.1209/Epl/I2000-00494-8  0.36
2000 Berthod C, Binggeli N, Baldereschi A. Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2114-2118. DOI: 10.1116/1.1303734  0.48
2000 Fall CJ, Binggeli N, Baldereschi A. Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure Physical Review B - Condensed Matter and Materials Physics. 61: 8489-8495. DOI: 10.1103/Physrevb.61.8489  0.48
2000 Bardi J, Binggeli N, Baldereschi A. Existence of localized interface states in meta/GaAs(100) junctions: Au versus Al contacts Physical Review B - Condensed Matter and Materials Physics. 61: 5416-5422. DOI: 10.1103/Physrevb.61.5416  0.48
2000 Peressi M, Fornari M, De Gironcoli S, De Santis L, Baldereschi A. Coordination defects in amorphous silicon and hydrogenated amorphous silicon: A characterization from first-principles calculations Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 80: 515-521. DOI: 10.1080/13642810008209759  0.48
2000 Haerle R, Baldereschi A, Galli G. Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamics Journal of Non-Crystalline Solids. 266: 740-745. DOI: 10.1016/S0022-3093(99)00793-0  0.36
1999 Fornari M, Peressi M, De Gironcoli S, Baldereschi A. Floating bonds and gap states in a-Si and a-Si:H from first principles calculations Europhysics Letters. 47: 481-486. DOI: 10.1209/epl/i1999-00413-7  0.36
1999 Favot F, Dal Corso A, Baldereschi A. Ab-initio study of the structure of Pd(110)-c(4 × 2)-benzene Surface Review and Letters. 6: 903-906. DOI: 10.1142/S0218625X99000962  0.36
1999 Massidda S, Posternak M, Baldereschi A, Resta R. Noncubic Behavior of Antiferromagnetic Transition-Metal Monoxides with the Rocksalt Structure Physical Review Letters. 82: 430-433. DOI: 10.1103/Physrevlett.82.430  0.36
1999 Bardi J, Binggeli N, Baldereschi A. Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs(100) and (110) junctions Physical Review B - Condensed Matter and Materials Physics. 59: 8054-8064. DOI: 10.1103/Physrevb.59.8054  0.48
1999 Fall CJ, Binggeli N, Baldereschi A. Deriving accurate work functions from thin-slab calculations Journal of Physics Condensed Matter. 11: 2689-2696. DOI: 10.1088/0953-8984/11/13/006  0.48
1999 Haerle R, Galli G, Baldereschi A. Structural models of amorphous carbon surfaces Applied Physics Letters. 75: 1718-1720. DOI: 10.1063/1.124836  0.36
1999 Fall CJ, Binggeli N, Baldereschi A. Local work function around sharp aluminum facet edges Computer Physics Communications. 121: 631. DOI: 10.1016/S0010-4655(06)70036-4  0.36
1999 Bardi J, Binggeli N, Baldereschi A. Numerical investigation of Schottky barriers at Al/GaAlAs interfaces Computer Physics Communications. 121: 602.  0.36
1998 Fall CJ, Binggeli N, Baldereschi A. Anomaly in the anisotropy of the aluminum work function Physical Review B - Condensed Matter and Materials Physics. 58: R7544-R7547. DOI: 10.1103/Physrevb.58.R7544  0.36
1998 Fernández P, Dal Corso A, Baldereschi A. Ab initio study of the dielectric properties of silicon and gallium arsenide using polarized Wannier functions Physical Review B - Condensed Matter and Materials Physics. 58: R7480-R7483. DOI: 10.1103/Physrevb.58.R7480  0.36
1998 Lazzarino M, Scarel G, Rubini S, Bratina G, Sorba L, Franciosi A, Berthod C, Binggeli N, Baldereschi A. Al/ZnSe(100) Schottky-barrier height versus initial ZnSe surface reconstruction Physical Review B - Condensed Matter and Materials Physics. 57: R9431-R9434. DOI: 10.1103/Physrevb.57.R9431  0.36
1998 Berthod C, Binggeli N, Baldereschi A. Formation energy, lattice relaxation, and electronic structure of Al/Si/GaAs(100) junctions Physical Review B - Condensed Matter and Materials Physics. 57: 9757-9762. DOI: 10.1103/Physrevb.57.9757  0.36
1998 Di Ventra M, Baldereschi A. Near-band-edge resonant states of AIAs monolayers embedded in bulk GaAs: The role of d symmetries Physical Review B - Condensed Matter and Materials Physics. 57: 3733-3736. DOI: 10.1103/Physrevb.57.3733  0.36
1998 Bitz A, Di Ventra M, Baldereschi A, Staehli J, Pietag F, Gottschalch V, Rhan H, Schwabe R. Optical properties of ultrathin GaAs layers embedded in AlxGa1-xAs Physical Review B - Condensed Matter and Materials Physics. 57: 2426-2430. DOI: 10.1103/Physrevb.57.2426  0.48
1998 Peressi M, Binggeli N, Baldereschi A. Band engineering at interfaces: Theory and numerical experiments Journal of Physics D: Applied Physics. 31: 1273-1299. DOI: 10.1088/0022-3727/31/11/002  0.36
1998 Peressi M, Baldereschi A. Structural and electronic properties of Ga2Se3 Journal of Applied Physics. 83: 3092-3095.  0.36
1997 Dal Corso A, Baldereschi A. Ab initio study of the structural and electronic properties of adsorbates: CO on Cu(001) Surface Review and Letters. 4: 885-889. DOI: 10.1142/S0218625X97000973  0.36
1997 Dal Corso A, Pasquarello A, Baldereschi A. Density-functional perturbation theory for lattice dynamics with ultrasoft pseudopotentials Physical Review B - Condensed Matter and Materials Physics. 56: R11369-R11372. DOI: 10.1103/Physrevb.56.R11369  0.36
1997 Fernández P, Dal Corso A, Baldereschi A, Mauri F. First-principles Wannier functions of silicon and gallium arsenide Physical Review B - Condensed Matter and Materials Physics. 55: R1909-R1913. DOI: 10.1103/Physrevb.55.R1909  0.36
1997 Posternak M, Baldereschi A, Krakauer H, Resta R. Non-nominal value of the dynamical effective charge in alkaline-earth oxides Physical Review B - Condensed Matter and Materials Physics. 55: R15983-R15986. DOI: 10.1103/Physrevb.55.R15983  0.36
1997 Tinivella U, Peressi M, Baldereschi A. Random pseudobinary ionic alloys: Lattice energy and structural properties Journal of Physics Condensed Matter. 9: 11141-11149. DOI: 10.1088/0953-8984/9/50/015  0.36
1997 Massidda S, Continenza A, Posternak M, Baldereschi A. Self-energy corrections in transition metal oxides Physica B: Condensed Matter. 237: 324-327.  0.48
1997 Massidda S, Continenza A, Posternak M, Baldereschi A. Quasiparticle energy bands of transition-metal oxides within a model GW scheme Physical Review B - Condensed Matter and Materials Physics. 55: 13494-13502.  0.36
1996 Di Ventra M, Peressi M, Baldereschi A. Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions. Physical Review. B, Condensed Matter. 54: 5691-5695. PMID 9986532 DOI: 10.1103/Physrevb.54.5691  0.36
1996 Bardi J, Binggeli N, Baldereschi A. Pressure and alloy-composition dependence of Al/Ga1-xAlxAs (100) Schottky barriers. Physical Review. B, Condensed Matter. 54: R11102-R11105. PMID 9984996 DOI: 10.1103/Physrevb.54.R11102  0.36
1996 Dal Corso A, Pasquarello A, Baldereschi A, Car R. Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids. Physical Review. B, Condensed Matter. 53: 1180-1185. PMID 9983574 DOI: 10.1103/Physrevb.53.1180  0.36
1996 Resta R, Massidda S, Posternak M, Baldereschi A. Polarization, dynamical charge, and bonding in partly covalent polar insulators Materials Research Society Symposium - Proceedings. 408: 9-12. DOI: 10.1557/Proc-408-9  0.36
1996 Berthod C, Binggeli N, Baldereschi A. Local interface dipoles cind the tuning of the Al/GaAs(100) Schottky-barrier height with ultrathin Si interlayers Europhysics Letters. 36: 67-72. DOI: 10.1209/Epl/I1996-00188-3  0.36
1996 Berthod C, Bardi J, Binggeli N, Baldereschi A. Schottky barrier tuning at Al/GaAs(100) junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3000-3007. DOI: 10.1116/1.588949  0.48
1996 Di Ventra M, Papp G, Coluzza C, Baldereschi A, Schulz PA. Indented barrier resonant tunneling rectifiers Journal of Applied Physics. 80: 4174-4176. DOI: 10.1063/1.363290  0.36
1996 Lazzouni ME, Peressi M, Baldereschi A. Valence-band offset at the Si/GaP (110) interface Applied Physics Letters. 68: 75-77. DOI: 10.1063/1.116762  0.48
1995 Massidda S, Continenza A, Posternak M, Baldereschi A. Band-structure picture for MnO reexplored: A model GW calculation. Physical Review Letters. 74: 2323-2326. PMID 10057899 DOI: 10.1103/Physrevlett.74.2323  0.36
1995 Massidda S, Resta R, Posternak M, Baldereschi A. Polarization and dynamical charge of ZnO within different one-particle schemes. Physical Review. B, Condensed Matter. 52: 16977-16980. PMID 9981109 DOI: 10.1103/Physrevb.52.R16977  0.36
1995 Sengstag T, Binggeli N, Baldereschi A. Anomalies in the pressure dependence of the effective charge in cubic semiconductors. Physical Review. B, Condensed Matter. 52: R8613-R8616. PMID 9979907 DOI: 10.1103/Physrevb.52.R8613  0.36
1995 Fiorentini V, Baldereschi A. Dielectric scaling of the self-energy scissor operator in semiconductors and insulators. Physical Review. B, Condensed Matter. 51: 17196-17198. PMID 9978735 DOI: 10.1103/Physrevb.51.17196  0.36
1995 Resta R, Posternak M, Baldereschi A. Quantum mechanism of polarization in perovskites Ferroelectrics. 164: 153-159. DOI: 10.1080/00150199508221837  0.36
1995 Almeida J, Dell'Orto T, Coluzza C, Fasso A, Baldereschi A, Margaritondo G, Rudra A, Buhlmann HJ, Ilegems M. Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study Journal of Applied Physics. 78: 3258-3261. DOI: 10.1063/1.360014  0.36
1995 Papp G, Di Ventra M, Coluzza C, Baldereschi A, Margaritondo G. Current rectification through a single-barrier resonant tunneling quantum structure Superlattices and Microstructures. 17: 273-275. DOI: 10.1006/Spmi.1995.1049  0.36
1995 Papp G, Coluzza C, Di Ventra M, Baldereschi A, Margaritondo G, Gu By. The I-V characteristics of double barrier stair-wells Superlattices and Microstructures. 17: 117. DOI: 10.1006/Spmi.1995.1023  0.36
1994 Nicolini R, Vanzetti L, Mula G, Bratina G, Sorba L, Franciosi A, Peressi M, Baroni S, Resta R, Baldereschi A, Angelo JE, Gerberich WW. Local interface composition and band discontinuities in heterovalent heterostructures. Physical Review Letters. 72: 294-297. PMID 10056108 DOI: 10.1103/Physrevlett.72.294  0.36
1994 Dal Corso A, Posternak M, Resta R, Baldereschi A. Ab initio study of piezoelectricity and spontaneous polarization in ZnO. Physical Review. B, Condensed Matter. 50: 10715-10721. PMID 9975171 DOI: 10.1103/Physrevb.50.10715  0.36
1994 Posternak M, Resta R, Baldereschi A. Role of covalent bonding in the polarization of perovskite oxides: The case of KNbO3. Physical Review. B, Condensed Matter. 50: 8911-8914. PMID 9974925 DOI: 10.1103/Physrevb.50.8911  0.36
1994 dell'Orto T, Almeida J, Coluzza C, Baldereschi A, Margaritondo G, Cantile M, Yildirim S, Sorba L, Franciosi A. Internal photoemission studies of artificial band discontinuities at buried GaAs(100)/GaAs(100) homojunctions Applied Physics Letters. 64: 2111-2113. DOI: 10.1063/1.111699  0.36
1993 Resta R, Posternak M, Baldereschi A. Towards a quantum theory of polarization in ferroelectrics: The case of KNbO3. Physical Review Letters. 70: 1010-1013. PMID 10054261 DOI: 10.1103/PhysRevLett.70.1010  0.36
1993 Massidda S, Posternak M, Baldereschi A. Hartree-Fock LAPW approach to the electronic properties of periodic systems. Physical Review. B, Condensed Matter. 48: 5058-5068. PMID 10009019 DOI: 10.1103/PhysRevB.48.5058  0.36
1993 Mäder KA, von Känel H, Baldereschi A. Electronic structure and bonding in epitaxially stabilized cubic iron silicides. Physical Review. B, Condensed Matter. 48: 4364-4372. PMID 10008908 DOI: 10.1103/PhysRevB.48.4364  0.36
1993 Peressi M, Colombo L, Resta R, Baroni S, Baldereschi A. Structural and electronic properties of strained Si/GaAs heterostructures. Physical Review. B, Condensed Matter. 48: 12047-12052. PMID 10007552 DOI: 10.1103/Physrevb.48.12047  0.36
1993 Baldereschi A, Peressi M. Atomic scale structure of ionic and semiconducting solid solutions Journal of Physics: Condensed Matter. 5: B37-B48. DOI: 10.1088/0953-8984/5/34B/007  0.36
1992 Biasiol G, Sorba L, Bratina G, Nicolini R, Franciosi A, Peressi M, Baroni S, Resta R, Baldereschi A. Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures. Physical Review Letters. 69: 1283-1286. PMID 10047174 DOI: 10.1103/PhysRevLett.69.1283  0.36
1992 Baldereschi A, Posternak M, Resta R. Baldereschi, Posternak, and Resta reply. Physical Review Letters. 69: 390. PMID 10046663 DOI: 10.1103/PhysRevLett.69.390  0.36
1992 Massidda S, Posternak M, Baldereschi A. Unrestricted Hartree-Fock approach to the insulating behavior of antiferromagnetic CaCuO2. Physical Review. B, Condensed Matter. 46: 11705-11708. PMID 10003060 DOI: 10.1103/PhysRevB.46.11705  0.36
1992 Binggeli N, Baldereschi A. Analysis of acceptor chemical shifts in Ge. Physical Review. B, Condensed Matter. 45: 5944-5952. PMID 10000334 DOI: 10.1103/PhysRevB.45.5944  0.36
1992 Marsi M, La Rosa S, Hwu Y, Gozzo F, Coluzza C, Baldereschi A, Margaritondo G, McKinley JT, Baroni S, Resta R. Microscopic manipulation of homojunction band lineups Journal of Applied Physics. 71: 2048-2050. DOI: 10.1063/1.351152  0.36
1991 Peressi M, Baroni S, Resta R, Baldereschi A. Tuning band offsets at semiconductor interfaces by intralayer deposition. Physical Review. B, Condensed Matter. 43: 7347-7350. PMID 9998208 DOI: 10.1103/Physrevb.43.7347  0.36
1991 Binggeli N, Baldereschi A. Determination of the hole effective masses in GaAs from acceptor spectra. Physical Review. B, Condensed Matter. 43: 14734-14737. PMID 9997372 DOI: 10.1103/PhysRevB.43.14734  0.36
1991 von Känel H, Müller E, Nissen HU, Bacsa W, Ospelt M, Mäder KA, Stalder R, Baldereschi A. Silicon heteroepitaxy: interface structure and physical properties Journal of Crystal Growth. 111: 889-896. DOI: 10.1016/0022-0248(91)91102-G  0.36
1991 Pennetta C, Baldereschi A. Mass dependence of the ground state of charged particles in a silicon crystal Il Nuovo Cimento D. 13: 495-504. DOI: 10.1007/BF02452133  0.36
1990 Posternak M, Baldereschi A, Catellani A, Resta R. Ab initio study of the spontaneous polarization of pyroelectric BeO. Physical Review Letters. 64: 1777-1780. PMID 10041486 DOI: 10.1103/PhysRevLett.64.1777  0.36
1990 Peressi M, Baroni S, Baldereschi A, Resta R. Electronic structure of InP/Ga0.47In0.53As interfaces. Physical Review. B, Condensed Matter. 41: 12106-12110. PMID 9993664 DOI: 10.1103/Physrevb.41.12106  0.36
1990 Ortiz G, Resta R, Baldereschi A. Neglecting local-field effects in the band-offset problem Journal of Physics: Condensed Matter. 2: 10217-10222. DOI: 10.1088/0953-8984/2/50/027  0.36
1989 Gygi F, Baldereschi A. Quasiparticle energies in semiconductors: Self-energy correction to the local-density approximation. Physical Review Letters. 62: 2160-2163. PMID 10039871 DOI: 10.1103/Physrevlett.62.2160  0.36
1989 Boguslawski P, Baldereschi A. Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices. Physical Review. B, Condensed Matter. 39: 8055-8058. PMID 9947508 DOI: 10.1103/Physrevb.39.8055  0.36
1989 Mäder KA, Baldereschi A, von Känel H. Band structure and instability of Ge1-xSnx alloys Solid State Communications. 69: 1123-1126. DOI: 10.1016/0038-1098(89)91046-6  0.36
1988 Binggeli N, Baldereschi A. Prediction of line intensities and interpretation of acceptor spectra in semiconductors Solid State Communications. 66: 323-328. DOI: 10.1016/0038-1098(88)90849-6  0.36
1987 Catellani A, Posternak M, Baldereschi A, Freeman AJ. Bulk and surface electronic structure of hexagonal boron nitride. Physical Review. B, Condensed Matter. 36: 6105-6111. PMID 9942294 DOI: 10.1103/Physrevb.36.6105  0.36
1986 Catellani A, Posternak M, Baldereschi A, Jansen HJ, Freeman AJ. Erratum: Electronic interlayer states in hexagonal boron nitride Physical Review. B, Condensed Matter. 34: 5929. PMID 9940443 DOI: 10.1103/Physrevb.34.5929  0.36
1986 Gygi F, Baldereschi A. Self-consistent Hartree-Fock and screened-exchange calculations in solids: Application to silicon. Physical Review. B, Condensed Matter. 34: 4405-4408. PMID 9940225 DOI: 10.1103/Physrevb.34.4405  0.36
1985 Catellani A, Posternak M, Baldereschi A, Jansen HJ, Freeman AJ. Electronic interlayer states in hexagonal boron nitride. Physical Review. B, Condensed Matter. 32: 6997-6999. PMID 9936833 DOI: 10.1103/Physrevb.32.6997  0.36
1985 Massidda S, Baldereschi A. Electron-density distribution in diamond, silicon and germanium under high pressure Solid State Communications. 56: 431-434. DOI: 10.1016/0038-1098(85)90025-0  0.36
1982 Pennetta C, Baldereschi A. Migration energy of interstitial ions in Si and Ge Solid State Communications. 44: 1397-1400. DOI: 10.1016/0038-1098(82)90902-4  0.36
1981 Depeursinge Y, Baldereschi A. Polytypism and layer-layer interaction in the III-VI layer semiconductors Physica B+C. 105: 324-328. DOI: 10.1016/0378-4363(81)90268-0  0.36
1981 Bernholc J, Pantelides ST, Lipari NO, Baldereschi A. The electronic structure of deep SP-bonded acceptor impurities in semiconductors Solid State Communications. 37: 705-708. DOI: 10.1016/0038-1098(81)91082-6  0.36
1981 Baur J, Maschke K, Baldereschi A. Relevance of non-linear screening in covalent semiconductors Solid State Communications. 39: 1297-1300. DOI: 10.1016/0038-1098(81)90230-1  0.36
1981 Baroni S, Quattropani A, Baldereschi A. Rydberg series of valence and core excited inert-gas atoms: Effects of electron relaxation Chemical Physics Letters. 79: 509-512. DOI: 10.1016/0009-2614(81)85025-7  0.36
1979 Czaja W, Baldereschi A. The isoelectronic trap iodine in AgBr Journal of Physics C: Solid State Physics. 12: 405-424. DOI: 10.1088/0022-3719/12/2/026  0.36
1979 Baldereschi A, Tosatti E. Dielectric band structure of solids Solid State Communications. 29: 131-135. DOI: 10.1016/0038-1098(79)91022-6  0.36
1978 Baldereschi A, Tosatti E. Mean-value point and dielectric properties of semiconductors and insulators Physical Review B. 17: 4710-4717. DOI: 10.1103/Physrevb.17.4710  0.36
1978 Depeursinge Y, Doni E, Girlanda R, Baldereschi A, Maschke K. Electronic properties of the layer semiconductor InSe Solid State Communications. 27: 1449-1453. DOI: 10.1016/0038-1098(78)91593-4  0.36
1977 Baldereschi A, Maschke K, Hess E, Neumann H, Schulze KR, Unger K. Energy band structure of AlxGa1-xAs Journal of Physics C: Solid State Physics. 10: 4709-4717. DOI: 10.1088/0022-3719/10/23/007  0.36
1977 Baldereschi A, Meloni F, Aymerich F, Mula G. Electronic properties of the defect-zincblende semiconductor CdIn4Se4 Solid State Communications. 21: 113-116. DOI: 10.1016/0038-1098(77)91490-9  0.36
1977 Balzarotti A, Girlanda R, Grasso V, Doni E, Antonangeli F, Piacentini M, Baldereschi A. X-ray photoelectron spectrum and two-dimensional band structure of InSe Solid State Communications. 24: 327-329. DOI: 10.1016/0038-1098(77)90220-4  0.36
1976 Rowe JE, Margaritondo G, Kasper H, Baldereschi A. Polarized-light photoelectron spectroscopy of GaSe and GaS with synchrotron radiation Solid State Communications. 20: 921-924. DOI: 10.1016/0038-1098(76)91306-5  0.36
1976 Mercier A, Mooser E, Voitchovsky JP, Baldereschi A. Luminescence of the resonant exciton in GaSxSe1-x Journal of Luminescence. 12: 285-290. DOI: 10.1016/0022-2313(76)90094-6  0.36
1972 Baldereschi A, Hopfield JJ. Binding to isoelectronic impurities in semiconductors Physical Review Letters. 28: 171-174. DOI: 10.1103/PhysRevLett.28.171  0.36
Show low-probability matches.