| Year |
Citation |
Score |
| 2019 |
Yang Y, Williams ED. Comment on "Kinetics and reconstruction of steps at the Si(001) surface" Physical Review Letters. 65: 1285. PMID 10042223 DOI: 10.1103/Physrevlett.65.1285 |
0.327 |
|
| 2014 |
Sangwan V, Ballarotto V, Hines D, Fuhrer M, Williams E. Corrigendum to “Controlled growth, patterning and placement of carbon nanotube thin films” [Solid-State Electron. 54 (2010) 1204–1210] Solid-State Electronics. 93: 66. DOI: 10.1016/J.Sse.2013.07.002 |
0.767 |
|
| 2013 |
Yuan X, Yu L, Li J, Xie G, Rong T, Zhang L, Chen J, Meng Q, Irving AT, Wang D, Williams ED, Liu JP, Sadler AJ, Williams BR, Shen L, et al. ATF3 suppresses metastasis of bladder cancer by regulating gelsolin-mediated remodeling of the actin cytoskeleton. Cancer Research. 73: 3625-37. PMID 23536558 DOI: 10.1158/0008-5472.CAN-12-3879 |
0.318 |
|
| 2012 |
Chen JH, Li L, Cullen WG, Williams ED, Fuhrer MS. Reply Nature Physics. 8: 353. DOI: 10.1038/Nphys2306 |
0.557 |
|
| 2012 |
Groce MA, Conrad BR, Cullen WG, Pimpinelli A, Williams ED, Einstein TL. Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide Surface Science. 606: 53-56. DOI: 10.1016/J.Susc.2011.08.020 |
0.782 |
|
| 2011 |
Ghanem TK, Williams ED, Fuhrer MS. Characterization of the electrical contact between a conductive atomic force microscope cantilever and a carbon nanotube Journal of Applied Physics. 110. DOI: 10.1063/1.3626811 |
0.749 |
|
| 2011 |
Chen JH, Li L, Cullen WG, Williams ED, Fuhrer MS. Tunable Kondo effect in graphene with defects Nature Physics. 7: 535-538. DOI: 10.1038/Nphys1962 |
0.606 |
|
| 2011 |
Huang J, Hines DR, Jung BJ, Bronsgeest MS, Tunnell A, Ballarotto V, Katz HE, Fuhrer MS, Williams ED, Cumings J. Polymeric semiconductor/graphene hybrid field-effect transistors Organic Electronics: Physics, Materials, Applications. 12: 1471-1476. DOI: 10.1016/J.Orgel.2011.05.021 |
0.758 |
|
| 2011 |
Sangwan VK, Southard A, Moore TL, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED. Transfer printing approach to all-carbon nanoelectronics Microelectronic Engineering. 88: 3150-3154. DOI: 10.1016/J.Mee.2011.06.017 |
0.789 |
|
| 2010 |
Cullen WG, Yamamoto M, Burson KM, Chen JH, Jang C, Li L, Fuhrer MS, Williams ED. High-fidelity conformation of graphene to SiO2 topographic features. Physical Review Letters. 105: 215504. PMID 21231322 DOI: 10.1103/PhysRevLett.105.215504 |
0.59 |
|
| 2010 |
Sangwan VK, Ballarotto VW, Siegrist K, Williams ED. Characterizing voltage contrast in photoelectron emission microscopy. Journal of Microscopy. 238: 210-7. PMID 20579259 DOI: 10.1111/J.1365-2818.2009.03342.X |
0.765 |
|
| 2010 |
Tao C, Cullen WG, Williams ED. Visualizing the electron scattering force in nanostructures. Science (New York, N.Y.). 328: 736-40. PMID 20448180 DOI: 10.1126/Science.1186648 |
0.569 |
|
| 2010 |
Williams ED, Bartelt NC. Thermodynamics of surface morphology. Science (New York, N.Y.). 251: 393-400. PMID 17775103 DOI: 10.1126/Science.251.4992.393 |
0.328 |
|
| 2010 |
Xiao S, Chen JH, Adam S, Williams ED, Fuhrer MS. Charged impurity scattering in bilayer graphene Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.041406 |
0.623 |
|
| 2010 |
Bevan KH, Guo H, Williams ED, Zhang Z. First-principles quantum transport theory of the enhanced wind force driving electromigration on Ag(111) Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235416 |
0.304 |
|
| 2010 |
Sangwan VK, Behnam A, Ballarotto VW, Fuhrer MS, Ural A, Williams ED. Optimizing transistor performance of percolating carbon nanotube networks Applied Physics Letters. 97. DOI: 10.1063/1.3469930 |
0.693 |
|
| 2009 |
Chen JH, Cullen WG, Jang C, Fuhrer MS, Williams ED. Defect scattering in graphene. Physical Review Letters. 102: 236805. PMID 19658959 DOI: 10.1103/Physrevlett.102.236805 |
0.621 |
|
| 2009 |
Stasevich TJ, Tao C, Cullen WG, Williams ED, Einstein TL. Impurity decoration for crystal shape control: C60 on Ag(111). Physical Review Letters. 102: 085501. PMID 19257751 DOI: 10.1103/Physrevlett.102.085501 |
0.66 |
|
| 2009 |
Stasevich TJ, Tao C, Cullen WG, Williams ED, Einstein TL. Impurity decoration for crystal shape control: C60 on Ag(111) Physical Review Letters. 102. DOI: 10.1103/PhysRevLett.102.085501 |
0.436 |
|
| 2009 |
Conrad BR, Tosado J, Dutton G, Dougherty DB, Jin W, Bonnen T, Schuldenfrei A, Cullen WG, Williams ED, Reutt-Robey JE, Robey SW. C60 cluster formation at interfaces with pentacene thin-film phases Applied Physics Letters. 95. DOI: 10.1063/1.3266857 |
0.777 |
|
| 2009 |
Conrad BR, Cullen WG, Riddick BC, Williams ED. Pentacene islands grown on ultra-thin SiO2 Surface Science. 603: L27-L30. DOI: 10.1016/J.Susc.2008.12.020 |
0.748 |
|
| 2009 |
Chen JH, Jang C, Ishigami M, Xiao S, Cullen WG, Williams ED, Fuhrer MS. Diffusive charge transport in graphene on SiO2 Solid State Communications. 149: 1080-1086. DOI: 10.1016/J.Ssc.2009.02.042 |
0.541 |
|
| 2009 |
Southard A, Sangwan V, Cheng J, Williams ED, Fuhrer MS. Solution-processed single walled carbon nanotube electrodes for organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 10: 1556-1561. DOI: 10.1016/J.Orgel.2009.09.001 |
0.703 |
|
| 2008 |
Jang C, Adam S, Chen JH, Williams ED, Das Sarma S, Fuhrer MS. Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering. Physical Review Letters. 101: 146805. PMID 18851558 DOI: 10.1103/Physrevlett.101.146805 |
0.624 |
|
| 2008 |
Tao C, Liu Q, Riddick BC, Riddick BS, Cullen WG, Reutt-Robey J, Weeks JD, Williams ED. Dynamic interfaces in an organic thin film. Proceedings of the National Academy of Sciences of the United States of America. 105: 16418-25. PMID 18765797 DOI: 10.1073/Pnas.0805811105 |
0.736 |
|
| 2008 |
Conrad BR, Gomar-Nadal E, Cullen WG, Pimpinelli A, Einstein TL, Williams ED. Effect of impurities on pentacene island nucleation Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.205328 |
0.78 |
|
| 2008 |
Tobias D, Ishigami M, Tselev A, Barbara P, Williams ED, Lobb CJ, Fuhrer MS. Origins of 1 f noise in individual semiconducting carbon nanotube field-effect transistors Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.033407 |
0.556 |
|
| 2008 |
Tunnell AJ, Ballarotto VW, Hines DR, Williams ED. Vertical integration on plastic substrates using transfer printing Applied Physics Letters. 93. DOI: 10.1063/1.3026744 |
0.768 |
|
| 2008 |
Sangwan VK, Ballarotto VW, Fuhrer MS, Williams ED. Facile fabrication of suspended as-grown carbon nanotube devices Applied Physics Letters. 93. DOI: 10.1063/1.2987457 |
0.71 |
|
| 2008 |
Chen JH, Jang C, Adam S, Fuhrer MS, Williams ED, Ishigami M. Charged-impurity scattering in graphene Nature Physics. 4: 377-381. DOI: 10.1038/Nphys935 |
0.536 |
|
| 2008 |
Tunnell AJ, Hines DR, Gomar-Nadal E, Williams ED. Printing-induced improvements of organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 9: 507-514. DOI: 10.1016/J.Orgel.2008.02.012 |
0.785 |
|
| 2007 |
Bondarchuk O, Cullen WG, Degawa M, Williams ED, Bole T, Rous PJ. Biased surface fluctuations due to current stress. Physical Review Letters. 99: 206801. PMID 18233173 DOI: 10.1103/Physrevlett.99.206801 |
0.615 |
|
| 2007 |
Tao CG, Cullen WG, Williams ED, Dasgupta C. Generalized survival in step fluctuations. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 76: 021601. PMID 17930045 DOI: 10.1103/Physreve.76.021601 |
0.532 |
|
| 2007 |
Ishigami M, Chen JH, Cullen WG, Fuhrer MS, Williams ED. Atomic structure of graphene on SiO2. Nano Letters. 7: 1643-8. PMID 17497819 DOI: 10.1021/Nl070613A |
0.641 |
|
| 2007 |
Conrad BR, Cullen WG, Dougherty DB, Lyubinetsky I, Williams ED. Spatial first-passage statistics of Al/Si(111)-(square root 3 x square root 3) step fluctuations. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 75: 021603. PMID 17358349 DOI: 10.1103/Physreve.75.021603 |
0.785 |
|
| 2007 |
Tao C, Stasevich TJ, Cullen WG, Einstein TL, Williams ED. Metal-molecule interface fluctuations. Nano Letters. 7: 1495-9. PMID 17352508 DOI: 10.1021/Nl070210A |
0.654 |
|
| 2007 |
Conrad BR, Cullen WG, Dougherty DB, Lyubinetsky I, Williams ED. Spatial first-passage statistics of Al/Si(111)-(3×3) step fluctuations Physical Review E - Statistical, Nonlinear, and Soft Matter Physics. 75. DOI: 10.1103/PhysRevE.75.021603 |
0.775 |
|
| 2007 |
Constantin M, Dasgupta C, Das Sarma S, Dougherty DB, Williams ED. Persistence and survival in equilibrium step fluctuations Journal of Statistical Mechanics: Theory and Experiment. DOI: 10.1088/1742-5468/2007/07/P07011 |
0.627 |
|
| 2007 |
Williams ED, Bondarchuk O, Tao CG, Yan W, Cullen WG, Rous PJ, Bole T. Temporal step fluctuations on a conductor surface: electromigration force, surface resistivity and low-frequency noise New Journal of Physics. 9: 387-387. DOI: 10.1088/1367-2630/9/10/387 |
0.585 |
|
| 2007 |
Conrad BR, Cullen WG, Yan W, Williams ED. Percolative effects on noise in pentacene transistors Applied Physics Letters. 91. DOI: 10.1063/1.2823577 |
0.721 |
|
| 2007 |
Esen G, Fuhrer MS, Ishigami M, Williams ED. Transmission line impedance of carbon nanotube thin films for chemical sensing Applied Physics Letters. 90. DOI: 10.1063/1.2709995 |
0.553 |
|
| 2007 |
Hines DR, Ballarotto VW, Williams ED, Shao Y, Solin SA. Transfer printing methods for the fabrication of flexible organic electronics Journal of Applied Physics. 101. DOI: 10.1063/1.2403836 |
0.643 |
|
| 2007 |
Tao C, Cullen W, Williams E, Hunyadi S, Murphy C. Surface morphology and step fluctuations on Ag nanowires Surface Science. 601: 4939-4943. DOI: 10.1016/J.Susc.2007.08.023 |
0.604 |
|
| 2007 |
Degawa M, Stasevich TJ, Pimpinelli A, Einstein TL, Williams ED. Facet-edge fluctuations with periphery diffusion kinetics Surface Science. 601: 3979-3983. DOI: 10.1016/J.Susc.2007.04.097 |
0.691 |
|
| 2007 |
Chen JH, Ishigami M, Jang C, Hines DR, Fuhrer MS, Williams ED. Printed graphene circuits Advanced Materials. 19: 3623-3627. DOI: 10.1002/Adma.200701059 |
0.709 |
|
| 2006 |
Degawa M, Stasevich TJ, Cullen WG, Pimpinelli A, Einstein TL, Williams ED. Distinctive fluctuations in a confined geometry. Physical Review Letters. 97: 080601. PMID 17026286 DOI: 10.1103/Physrevlett.97.080601 |
0.68 |
|
| 2006 |
Xu B, Tao C, Williams ED, Reutt-Robey JE. Coverage dependent supramolecular structures: C60:ACA monolayers on Ag(111). Journal of the American Chemical Society. 128: 8493-9. PMID 16802815 DOI: 10.1021/Ja060227F |
0.718 |
|
| 2006 |
Sangwan VK, Hines DR, Ballarotto VW, Esen G, Fuhrer MS, Williams ED. Patterned Carbon Nanotube Thin-Film Transistors with Transfer-Print Assembly Mrs Proceedings. 963: 94-100. DOI: 10.1557/Proc-0963-Q10-57 |
0.725 |
|
| 2006 |
Degawa M, Thürmer K, Williams ED. Kinetic parameters of Pb obtained from crystallite evolutions Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 2070-2075. DOI: 10.1143/Jjap.45.2070 |
0.583 |
|
| 2006 |
Degawa M, Stasevich TJ, Cullen WG, Pimpinelli A, Einstein TL, Williams ED. Distinctive fluctuations in a confined geometry Physical Review Letters. 97. DOI: 10.1103/PhysRevLett.97.080601 |
0.638 |
|
| 2006 |
Degawa M, Thürmer K, Williams ED. Constrained evolution of nanocrystallites Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.155432 |
0.591 |
|
| 2006 |
Tao C, Stasevich TJ, Einstein TL, Williams ED. Step fluctuations on Ag(111) surfaces with C60 Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125436 |
0.653 |
|
| 2006 |
Szalma F, Dougherty DB, Degawa M, Williams ED, Haftel MI, Einstein TL. Correlations in nanoscale step fluctuations: Comparison of simulation and experiments Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.115413 |
0.775 |
|
| 2006 |
Shao Y, Solin SA, Hines DR, Williams ED. The effect of transfer printing on pentacene thin-film crystal structure Journal of Applied Physics. 100. DOI: 10.1063/1.2336301 |
0.64 |
|
| 2006 |
Ishigami M, Chen JH, Williams ED, Tobias D, Chen YF, Fuhrer MS. Hooge's constant for carbon nanotube field effect transistors Applied Physics Letters. 88. DOI: 10.1063/1.2206685 |
0.538 |
|
| 2005 |
Ranganathan M, Dougherty DB, Cullen WG, Zhao T, Weeks JD, Williams ED. Spiral evolution in a confined geometry. Physical Review Letters. 95: 225505. PMID 16384234 DOI: 10.1103/Physrevlett.95.225505 |
0.625 |
|
| 2005 |
Xu B, Tao C, Cullen WG, Reutt-Robey JE, Williams ED. Chiral symmetry breaking in two-dimensional C60-ACA intermixed systems. Nano Letters. 5: 2207-11. PMID 16277454 DOI: 10.1021/Nl051415R |
0.71 |
|
| 2005 |
Dougherty DB, Tao C, Bondarchuk O, Cullen WG, Williams ED, Constantin M, Dasgupta C, Das Sarma S. Sampling-time effects for persistence and survival in step structural fluctuations. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 71: 021602. PMID 15783332 DOI: 10.1103/Physreve.71.021602 |
0.709 |
|
| 2005 |
Bondarchuk O, Dougherty DB, Degawa M, Williams ED, Constantin M, Dasgupta C, Das Sarma S. Correlation time for step structural fluctuations Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.045426 |
0.725 |
|
| 2005 |
Breban M, Romero DB, Mezhenny S, Ballarotto VW, Williams ED. Photocurrent probe of field-dependent mobility in organic thin-film transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2131183 |
0.594 |
|
| 2005 |
Hines DR, Mezhenny S, Breban M, Williams ED, Ballarotto VW, Esen G, Southard A, Fuhrer MS. Nanotransfer printing of organic and carbon nanotube thin-film transistors on plastic substrates Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901809 |
0.783 |
|
| 2005 |
Pimpinelli A, Degawa M, Einstein TL, Williams ED. A facet is not an island: Step-step interactions and the fluctuations of the boundary of a crystal facet Surface Science. 598: L355-L360. DOI: 10.1016/J.Susc.2005.09.023 |
0.666 |
|
| 2005 |
Degawa M, Williams ED. Barriers to shape evolution of supported nano-crystallites Surface Science. 595: 87-96. DOI: 10.1016/J.Susc.2005.08.012 |
0.57 |
|
| 2005 |
Degawa M, Szalma F, Williams ED. Nano-scale equilibrium crystal shapes Surface Science. 583: 126-138. DOI: 10.1016/J.Susc.2005.03.032 |
0.568 |
|
| 2004 |
Breban M, Mezhenny S, Hines DR, Romero DB, Ballarotto VW, Williams ED. Environmental Sensitivity of Pentacene Thin-Film Transistors Mrs Proceedings. 828. DOI: 10.1557/Proc-828-A4.4 |
0.717 |
|
| 2004 |
Williams ED. Nanoscale Structures: Lability, Length Scales, and Fluctuations Mrs Bulletin. 29: 621-629. DOI: 10.1557/Mrs2004.182 |
0.305 |
|
| 2004 |
Dougherty DB, Lyubinetsky I, Einstein TL, Williams ED. Distinguishing step relaxation mechanisms via pair correlation functions Physical Review B - Condensed Matter and Materials Physics. 70: 1-5. DOI: 10.1103/Physrevb.70.235422 |
0.716 |
|
| 2004 |
Siegrist K, Ballarotto VW, Breban M, Yongsunthon R, Williams ED. Imaging buried structures with photoelectron emission microscopy Applied Physics Letters. 84: 1419-1421. DOI: 10.1063/1.1650914 |
0.778 |
|
| 2004 |
Rous PJ, Yongsunthon R, Stanishevsky A, Williams ED. Real-space imaging of current distributions at the submicron scale using magnetic force microscopy: Inversion methodology Journal of Applied Physics. 95: 2477-2486. DOI: 10.1063/1.1641149 |
0.706 |
|
| 2004 |
Dougherty DB, Thürmer K, Degawa M, Cullen WG, Reutt-Robey JE, Williams ED. Triggered fast relaxation of metastable Pb crystallites Surface Science. 554: 233-244. DOI: 10.1016/J.Susc.2004.01.035 |
0.791 |
|
| 2003 |
Constantin M, Das Sarma S, Dasgupta C, Bondarchuk O, Dougherty DB, Williams ED. Infinite family of persistence exponents for interface fluctuations. Physical Review Letters. 91: 086103. PMID 14525262 DOI: 10.1103/Physrevlett.91.086103 |
0.646 |
|
| 2003 |
Siegrist K, Ballarotto VW, Williams ED. Quantifying Field-Induced Contrast Effects in Photoelectron Emission Microscopy Mrs Proceedings. 803. DOI: 10.1557/Proc-803-Gg3.9 |
0.321 |
|
| 2003 |
Siegrist K, Williams ED, Ballarotto VW. Characterizing topography-induced contrast in photoelectron emission microscopy Journal of Vacuum Science and Technology. 21: 1098-1102. DOI: 10.1116/1.1562185 |
0.75 |
|
| 2003 |
THüRMER K, Williams ED, Reutt-Robey JE. Dewetting dynamics of ultrathin silver films on Si(111) Physical Review B. 68: 155423. DOI: 10.1103/Physrevb.68.155423 |
0.402 |
|
| 2003 |
Yongsunthon R, Stanishevsky A, Williams ED, Rous PJ. Mapping electron flow using magnetic force microscopy Applied Physics Letters. 82: 3287-3289. DOI: 10.1063/1.1573349 |
0.711 |
|
| 2003 |
Schroll RD, Cohen SD, Einstein TL, Métois JJ, Gebremariam H, Richards HL, Williams ED. Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: Anomalous step-step repulsion Applied Surface Science. 212: 219-223. DOI: 10.1016/S0169-4332(03)00409-4 |
0.588 |
|
| 2003 |
Yongsunthon R, Rous PJ, Stanishevsky A, Siegrist K, Williams ED. Phase imaging of buried structures Applied Surface Science. 210: 6-11. DOI: 10.1016/S0169-4332(02)01470-8 |
0.778 |
|
| 2003 |
Thürmer K, Reutt-Robey JE, Williams ED. Nucleation limited crystal shape transformations Surface Science. 537: 123-133. DOI: 10.1016/S0039-6028(03)00600-9 |
0.647 |
|
| 2003 |
Dougherty DB, Bondarchuk O, Degawa M, Williams ED. Persistence exponents for step edge diffusion Surface Science. 527: L213-L218. DOI: 10.1016/S0039-6028(03)00017-7 |
0.728 |
|
| 2002 |
Thürmer K, Williams E, Reutt-Robey J. Autocatalytic oxidation of lead crystallite surfaces. Science (New York, N.Y.). 297: 2033-5. PMID 12242437 DOI: 10.1126/Science.297.5589.2033 |
0.66 |
|
| 2002 |
Dougherty DB, Lyubinetsky I, Williams ED, Constantin M, Dasgupta C, Das Sarma S. Experimental persistence probability for fluctuating steps. Physical Review Letters. 89: 136102. PMID 12225042 DOI: 10.1103/Physrevlett.89.136102 |
0.646 |
|
| 2002 |
Ballarotto VW, Breban M, Siegrist K, Phaneuf RJ, Williams ED. Photoelectron emission microscopy of ultrathin oxide covered devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2514-2518. DOI: 10.1116/1.1525007 |
0.594 |
|
| 2002 |
Cohen SD, Schroll RD, Einstein TL, Métois JJ, Gebremariam H, Richards HL, Williams ED. Si(111) step fluctuations at high temperature: Anomalous step-step repulsion Physical Review B. 66: 115310. DOI: 10.1103/Physrevb.66.115310 |
0.574 |
|
| 2002 |
Lyubinetsky I, Dougherty DB, Einstein TL, Williams ED. Dynamics of step fluctuations on a chemically heterogeneous surface of Al/Si(111)-(√3×√3) Physical Review B. 66. DOI: 10.1103/Physrevb.66.085327 |
0.741 |
|
| 2002 |
Yongsunthon R, Williams ED, McCoy J, Pego R, Stanishevsky A, Rous PJ. Test of response linearity for magnetic force microscopy data Journal of Applied Physics. 92: 1256-1261. DOI: 10.1063/1.1489701 |
0.693 |
|
| 2002 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED. Model for doping-induced contrast in photoelectron emission microscopy Journal of Applied Physics. 91: 469-475. DOI: 10.1063/1.1423399 |
0.335 |
|
| 2001 |
Yongsunthon R, Williams ED, Stanishevsky A, McCoy J, Pego R, Rous PJ, Peckerar M. Magnetic Force Microscopy Signatures of Defects in Current-carrying Lines Mrs Proceedings. 699. DOI: 10.1557/Proc-699-R5.2 |
0.69 |
|
| 2001 |
Park JY, Phaneuf RJ, Williams ED. Conductance Imaging of the Depletion Region of Biased Silicon PN Junction Device Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J2.3 |
0.321 |
|
| 2001 |
Park JY, Phaneuf RJ, Williams ED. Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 523-526. DOI: 10.1116/1.1358883 |
0.34 |
|
| 2001 |
Thürmer K, Reutt-Robey JE, Williams ED, Uwaha M, Emundts A, Bonzel HP. Step Dynamics in 3D Crystal Shape Relaxation Physical Review Letters. 87: 186102. DOI: 10.1103/Physrevlett.87.186102 |
0.321 |
|
| 2001 |
Ganpule CS, Roytburd AL, Nagarajan V, Hill BK, Ogale SB, Williams ED, Ramesh R, Scott JF. Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films Physical Review B. 65: 14101. DOI: 10.1103/Physrevb.65.014101 |
0.302 |
|
| 2001 |
Shinde SR, Ogale AS, Ogale SB, Aggarwal S, Novikov V, Williams ED, Ramesh R. Self-organized pattern formation in the oxidation of supported iron thin films. i. an experimental study Physical Review B. 64. DOI: 10.1103/Physrevb.64.035408 |
0.321 |
|
| 2001 |
Ganpule CS, Nagarajan V, Li H, Ogale AS, Martinez AD, Ogale SB, Aggarwal S, Williams E, Wolf PD, Ramesh R. Direct observation of domain dynamics in lead zirconate titanate thin films Integrated Ferroelectrics. 32: 199-208. DOI: 10.1080/10584580108215690 |
0.3 |
|
| 2001 |
Nagarajan V, Ganpule CS, Li H, Salamanca-Riba L, Roytburd AL, Williams ED, Ramesh R. Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates Applied Physics Letters. 79: 2805-2807. DOI: 10.1063/1.1402645 |
0.309 |
|
| 2001 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED, Yang WC, Nemanich RJ. Photon energy dependence of contrast in photoelectron emission microscopy of Si devices Applied Physics Letters. 78: 3547-3549. DOI: 10.1063/1.1376151 |
0.307 |
|
| 2001 |
Yongsunthon R, Stanishevsky A, McCoy J, Williams ED. Observation of current crowding near fabricated voids in gold lines Applied Physics Letters. 78: 2661-2663. DOI: 10.1063/1.1368190 |
0.706 |
|
| 2001 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED. PEEM imaging and modeling of dopant-concentration variation in Si devices Characterization and Metrology For Ulsi Technology. 550: 307-311. DOI: 10.1063/1.1354416 |
0.337 |
|
| 2001 |
Aggarwal S, Ogale SB, Ganpule CS, Shinde SR, Novikov VA, Monga AP, Burr MR, Ramesh R, Ballarotto V, Williams ED. Oxide nanostructures through self-assembly Applied Physics Letters. 78: 1442-1444. DOI: 10.1063/1.1352666 |
0.303 |
|
| 2001 |
Ichimiya A, Hayashi K, Williams ED, Einstein TL, Uwaha M, Watanabe K. Decay of silicon mounds: Scaling laws and description with continuum step parameters Applied Surface Science. 175: 33-35. DOI: 10.1016/S0169-4332(01)00157-X |
0.576 |
|
| 2001 |
Lyubinetsky I, Dougherty DB, Richards HL, Einstein TL, Williams ED. Step wandering on Al/Si(1 1 1)-(√3 × √3) surface at high temperatures Surface Science. 492: L671-L676. DOI: 10.1016/S0039-6028(01)01462-5 |
0.72 |
|
| 2001 |
Degawa M, Thürmer K, Morishima I, Minoda H, Yagi K, Williams E. Initial stage of in-phase step wandering on Si(111) vicinal surfaces Surface Science. 487: 171-179. DOI: 10.1016/S0039-6028(01)01089-5 |
0.603 |
|
| 2001 |
Emundts A, Bonzel HP, Wynblatt P, Thürmer K, Reutt-Robey J, Williams ED. Continuous and discontinuous transitions on 3D equilibrium crystal shapes: A new look at Pb and Au Surface Science. 481: 13-24. DOI: 10.1016/S0039-6028(01)01055-X |
0.663 |
|
| 2000 |
Ganpule CS, Roytburd AL, Nagarajan V, Stanishevsky A, Melngailis J, Williams ED, Ramesh R. Nanoscale electromechanical phenomena in ferroelectric thin films Mrs Proceedings. 655. DOI: 10.1557/Proc-655-Cc1.5.1 |
0.337 |
|
| 2000 |
Aggarwal S, Ganpule C, Jenkins IG, Nagaraj B, Stanishevsky A, Melngailis J, Williams E, Ramesh R. High density ferroelectric memories: Materials, processing and scaling Integrated Ferroelectrics. 28: 213-225. DOI: 10.1080/10584580008222233 |
0.323 |
|
| 2000 |
Nagarajan V, Alpay SP, Ganpule CS, Nagaraj BK, Aggarwal S, Williams ED, Roytburd AL, Ramesh R. Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films Applied Physics Letters. 77: 438-440. DOI: 10.1063/1.127002 |
0.323 |
|
| 2000 |
Park JY, Phaneuf RJ, Williams ED. Variation of threshold field in field induced fabrication of Au nanodots on ultrathin in situ grown silicon oxide Surface Science. 470: L69-L74. DOI: 10.1016/S0039-6028(00)00897-9 |
0.311 |
|
| 2000 |
Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED, Mogren S. PEEM imaging of dopant contrast in Si(001) Surface Science. 461. DOI: 10.1016/S0039-6028(00)00619-1 |
0.32 |
|
| 2000 |
Sudoh K, Iwasaki H, Williams ED. Facet growth due to attractive step-step interactions on vicinal Si (113) Surface Science. 452. DOI: 10.1016/S0039-6028(00)00395-2 |
0.342 |
|
| 1999 |
Thürmer K, Liu DJ, Williams ED, Weeks JD. Onset of step antibanding instability due to surface electromigration Physical Review Letters. 83: 5531-5534. DOI: 10.1103/Physrevlett.83.5531 |
0.35 |
|
| 1999 |
Toroczkai Z, Williams ED. Nanoscale Fluctuations at Solid Surfaces Physics Today. 52: 24-28. DOI: 10.1063/1.882897 |
0.321 |
|
| 1999 |
Nagarajan V, Ganpule CS, Nagaraj B, Aggarwal S, Alpay SP, Roytburd AL, Williams ED, Ramesh R. Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films Applied Physics Letters. 75: 4183-4185. DOI: 10.1063/1.125576 |
0.342 |
|
| 1999 |
Ganpule CS, Stanishevsky A, Aggarwal S, Melngailis J, Williams E, Ramesh R, Joshi V, Araujo CPd. Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films Applied Physics Letters. 75: 3874-3876. DOI: 10.1063/1.125485 |
0.305 |
|
| 1999 |
Jeong H, Williams ED. Steps on surfaces: experiment and theory Surface Science Reports. 34: 171-294. DOI: 10.1016/S0167-5729(98)00010-7 |
0.33 |
|
| 1999 |
Fu ES, Wang X, Williams ED. Characterization of structures fabricated by atomic force microscope lithography Surface Science. 438: 58-67. DOI: 10.1016/S0039-6028(99)00552-X |
0.354 |
|
| 1998 |
Sudoh K, Yoshinobu T, Iwasaki H, Williams ED. Step Fluctuations on Vicinal Si(113) Physical Review Letters. 80: 5152-5155. DOI: 10.1103/Physrevlett.80.5152 |
0.31 |
|
| 1998 |
Lanczycki CJ, Kotlyar R, Fu E, Yang Y-, Williams ED, Sarma SD. Growth Of Si On The Si(111) Surface Physical Review B. 57: 13132-13148. DOI: 10.1103/Physrevb.57.13132 |
0.307 |
|
| 1998 |
Hildner ML, Phaneuf RJ, Williams ED. Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy Applied Physics Letters. 72: 3314-3316. DOI: 10.1063/1.121635 |
0.344 |
|
| 1998 |
Schwennicke C, Wang X-, Einstein TL, Williams ED. Evolution of surface morphology of vicinal Si(111) surfaces after aluminum deposition Surface Science. 418: 22-31. DOI: 10.1016/S0039-6028(98)00658-X |
0.581 |
|
| 1998 |
Wang X, Williams ED. Step structures on Br-chemisorbed vicinal Si(111) Surface Science. 400: 220-231. DOI: 10.1016/S0039-6028(97)00864-9 |
0.381 |
|
| 1998 |
Giesen M, Phaneuf RJ, Williams ED, Einstein TL. Photoemission electron microscopy of Schottky contacts Surface Science. 396: 411-421. DOI: 10.1016/S0039-6028(97)00696-1 |
0.586 |
|
| 1998 |
Williams ED. Nanostructure evolution and electromigration on silicon: Experimental application of length-scaling predictions Solid State Communications. 107: 681-691. DOI: 10.1016/S0038-1098(98)00214-2 |
0.361 |
|
| 1997 |
Tsai V, Wang X-, Williams ED, Schneir J, Dixson R. Conformal oxides on Si surfaces Applied Physics Letters. 71: 1495-1497. DOI: 10.1063/1.119947 |
0.357 |
|
| 1997 |
Fu ES, Liu DJ, Johnson MD, Weeks JD, Williams ED. The effective charge in surface electromigration Surface Science. 385: 259-269. DOI: 10.1016/S0039-6028(97)00188-X |
0.336 |
|
| 1997 |
Giesen M, Phaneuf RJ, Williams ED, Einstein TL, Ibach H. Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy Applied Physics A. 64: 423-430. DOI: 10.1007/S003390050500 |
0.557 |
|
| 1996 |
Fu ES, Johnson MD, Liu D, Weeks JD, Williams ED. Size Scaling in the Decay of Metastable Structures. Physical Review Letters. 77: 1091-1094. PMID 10062988 DOI: 10.1103/Physrevlett.77.1091 |
0.316 |
|
| 1996 |
Williams ED, Fu ES, Li B. Evolution of Morphology During Etching of Si Mrs Proceedings. 466. DOI: 10.1557/Proc-466-157 |
0.301 |
|
| 1996 |
Yang Y-, Fu ES, Williams ED. An STM study of current-induced step bunching on Si(111) Surface Science. 356: 101-111. DOI: 10.1016/0039-6028(96)00033-7 |
0.375 |
|
| 1996 |
Ryland RG, Hasegawa S, Williams ED. Silicon motion during antimony deposition on Si(111) Surface Science. 345: 222-234. DOI: 10.1016/0039-6028(95)00864-0 |
0.782 |
|
| 1995 |
Kodiyalam S, Khor KE, Bartelt NC, Williams ED, Sarma SD. Energetics of vicinal Si(111) steps using empirical potentials. Physical Review B. 51: 5200-5213. PMID 9979396 DOI: 10.1103/Physrevb.51.5200 |
0.327 |
|
| 1995 |
Williams ED, Fu E, Yang YN, Kandel D, Weeks JD. Measurement of the anisotropy ratio during current-induced step bunching Surface Science. 336: L746-L752. DOI: 10.1016/0039-6028(95)00551-X |
0.335 |
|
| 1994 |
Hasegawa S, Ryland RG, Williams ED. Interface roughening in surfactant deposition Applied Physics Letters. 65: 2609-2611. DOI: 10.1063/1.112583 |
0.784 |
|
| 1994 |
Williams ED, Phaneuf R, Wei J, Bartelt N, Einstein T. Erratum to “thermodynamics and statistical mechanics of the faceting of stepped Si(111)” [Surface Science 294 (1993) 219] Surface Science. 310: 451-452. DOI: 10.1016/0039-6028(94)91407-9 |
0.543 |
|
| 1994 |
Jung TM, Phaneuf RJ, Williams ED. Sublimation and phase transitions on singular and vicinal Si(111) surfaces Surface Science. 301: 129-135. DOI: 10.1016/0039-6028(94)91294-7 |
0.325 |
|
| 1994 |
Bartelt NC, Einstein TL, Williams ED. Measuring surface mass diffusion coefficients by observing step fluctuations Surface Science. 312: 411-421. DOI: 10.1016/0039-6028(94)90732-3 |
0.562 |
|
| 1994 |
Williams ED. Surface steps and surface morphology: understanding macroscopic phenomena from atomic observations Surface Science. 502-524. DOI: 10.1016/0039-6028(94)90678-5 |
0.319 |
|
| 1994 |
Rous PJ, Einstein TL, Williams ED. Theory of surface electromigration on metals: application to self-electromigration on Cu(111) Surface Science. 315: L995-L1002. DOI: 10.1016/0039-6028(94)90532-0 |
0.549 |
|
| 1994 |
Li B, Bartelt NC, Williams ED. The contact angles of trapped steps Chemical Physics Letters. 217: 595-599. DOI: 10.1016/0009-2614(93)E1437-L |
0.337 |
|
| 1993 |
Phaneuf RJ, Bartelt NC, Williams ED, Swiech W, Bauer E. Crossover from metastable to unstable facet growth on Si(111). Physical Review Letters. 71: 2284-2287. PMID 10054634 DOI: 10.1103/Physrevlett.71.2284 |
0.353 |
|
| 1993 |
Bartelt NC, Goldberg JL, Einstein TL, Williams ED, Heyraud JC, Métois JJ. Brownian motion of steps on Si(111). Physical Review. B, Condensed Matter. 48: 15453-15456. PMID 10008088 DOI: 10.1103/Physrevb.48.15453 |
0.56 |
|
| 1993 |
Williams ED, Phaneuf RJ, Wei J, Bartelt NC, Einstein TL. Thermodynamics and statistical mechanics of the faceting of stepped Si(111) Surface Science. 294: 219-242. DOI: 10.1016/0167-2584(93)91093-4 |
0.58 |
|
| 1992 |
Wei J, Wang X, Goldberg JL, Bartelt NC, Williams ED. Step-height mixtures on vicinal Si(111) surfaces. Physical Review Letters. 68: 3885-3888. PMID 10045829 DOI: 10.1103/Physrevlett.68.3885 |
0.366 |
|
| 1992 |
Einstein TL, Jung TM, Bartelt NC, Williams ED, Rottman C. Step doubling and related transitions on vicinal surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 2600-2605. DOI: 10.1116/1.577944 |
0.546 |
|
| 1992 |
Bartelt NC, Einstein TL, Williams ED. The role of step collisions on diffraction from vicinal surfaces Surface Science. 276: 308-324. DOI: 10.1016/0167-2584(92)90095-M |
0.584 |
|
| 1992 |
Bartelt NC, Goldberg JL, Einstein TL, Williams ED. The equilibration of terrace width distributions on stepped surfaces Surface Science. 273: 252-260. DOI: 10.1016/0039-6028(92)90290-M |
0.562 |
|
| 1991 |
Williams ED, Phaneuf RJ, Bartelt NC, Świe¸ch W, Bauer E. The Role of Surface Stress in the Faceting of Stepped Si(111) Surfaces Mrs Proceedings. 238: 219. DOI: 10.1557/Proc-238-219 |
0.333 |
|
| 1991 |
Li B, Williams ED. Stability of the YBa 2 Cu 3 O 7− x −Si interface Journal of Materials Research. 6: 1634-1640. DOI: 10.1557/Jmr.1991.1634 |
0.334 |
|
| 1991 |
Goldberg JL, Wang X‐, Wei J, Bartelt NC, Williams ED. Quantization of terrace widths on vicinal Si(111) Journal of Vacuum Science and Technology. 9: 1868-1873. DOI: 10.1116/1.577536 |
0.355 |
|
| 1991 |
Wei J, Wang X, Bartelt NC, Williams ED, Tung RT. The precipitation of kinks on stepped Si(111) surfaces Journal of Chemical Physics. 94: 8384-8389. DOI: 10.1063/1.460070 |
0.344 |
|
| 1991 |
Goldberg JL, Wang XS, Bartelt NC, Williams ED. Surface height correlation functions of vicinal Si(111) surfaces using scanning tunneling microscopy Surface Science. 249: L285-L292. DOI: 10.1016/0039-6028(91)90815-A |
0.344 |
|
| 1991 |
Wei J, Williams ED, Park RL. Low-energy electron diffraction study of the reconstruction and orientational stability of Si(331) Surface Science. 250: L368-L372. DOI: 10.1016/0039-6028(91)90698-R |
0.34 |
|
| 1991 |
Jung TM, Phaneuf RJ, Williams ED. Step structure and surface reconstruction on vicinal Ge(111) surfaces Surface Science. 254: 235-250. DOI: 10.1016/0039-6028(91)90656-D |
0.337 |
|
| 1991 |
Bartelt NC, Einstein TL, Williams ED. Diffraction from stepped surfaces in thermal equilibrium Surface Science. 244: 149-159. DOI: 10.1016/0039-6028(91)90178-U |
0.575 |
|
| 1990 |
Wang X, Goldberg JL, Bartelt NC, Einstein TL, Williams ED. Terrace-width distributions on vicinal Si(111). Physical Review Letters. 65: 2430-2433. PMID 10042546 DOI: 10.1103/Physrevlett.65.2430 |
0.535 |
|
| 1990 |
Yang Y, Williams ED, Park RL, Bartelt NC, Einstein TL. Disordering of the (3 x 1) reconstruction on Si(113) and the chiral three-state Potts model. Physical Review Letters. 64: 2410-2413. PMID 10041705 DOI: 10.1103/Physrevlett.64.2410 |
0.528 |
|
| 1990 |
Ohno TR, Williams ED. Step structure and interface morphology: Arsenic on vicinal silicon surfaces Journal of Vacuum Science & Technology B. 8: 874-883. DOI: 10.1116/1.584981 |
0.361 |
|
| 1990 |
Yang Y, Williams ED. The role of carbon in the faceting of silicon surfaces on the (111) to (001) azimuth Journal of Vacuum Science and Technology. 8: 2481-2488. DOI: 10.1116/1.576719 |
0.354 |
|
| 1990 |
Bartelt NC, Einstein TL, Williams ED. The influence of step-step interactions on step wandering Surface Science. 240: L591-L598. DOI: 10.1016/0039-6028(90)90722-K |
0.577 |
|
| 1989 |
Hwang RQ, Williams ED, Park RL. High-resolution low-energy electron-diffraction study of the phase diagram of vicinal Si(111) surfaces. Physical Review. B, Condensed Matter. 40: 11716-11722. PMID 9991774 DOI: 10.1103/Physrevb.40.11716 |
0.301 |
|
| 1989 |
Bartelt NC, Williams ED, Phaneuf RJ, Yang Y, Sarma SD. Orientational stability of silicon surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1898-1905. DOI: 10.1116/1.576025 |
0.356 |
|
| 1989 |
Ohno TR, Williams ED. Arsenic‐induced step rearrangements on vicinal Si (111) substrates Applied Physics Letters. 55: 2628-2630. DOI: 10.1063/1.101957 |
0.364 |
|
| 1989 |
Williams ED, Bartelt NC. Surface faceting and the equilibrium crystal shape Ultramicroscopy. 31: 36-48. DOI: 10.1016/0304-3991(89)90032-6 |
0.316 |
|
| 1989 |
Yang Y, Williams ED. Carbon-induced faceting of Si(112) Surface Science. 215: 102-110. DOI: 10.1016/0039-6028(89)90703-6 |
0.321 |
|
| 1988 |
Phaneuf RJ, Williams ED, Bartelt NC. Temperature dependence of vicinal Si(111) surfaces. Physical Review. B, Condensed Matter. 38: 1984-1993. PMID 9946485 DOI: 10.1103/Physrevb.38.1984 |
0.334 |
|
| 1988 |
Phaneuf RJ, Williams ED. Summary Abstract: Surface phase separation of vicinal Si(111) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 657. DOI: 10.1116/1.575146 |
0.305 |
|
| 1988 |
Phaneuf RJ, Williams ED. Metastable structures of Si(111) formed by laser-quenching Surface Science. 195: 330-340. DOI: 10.1016/0039-6028(88)90799-6 |
0.347 |
|
| 1988 |
Akinci G, Ohno TR, Williams ED. NiSi2 on Si(111): II. Effects of substrate temperature and defect structure Surface Science. 201: 27-46. DOI: 10.1016/0039-6028(88)90595-X |
0.375 |
|
| 1988 |
Akinci G, Ohno TR, Williams ED. NiSi2 on Si(111) I. Effects of substrate cleaning procedure and reconstruction Surface Science. 193: 534-548. DOI: 10.1016/0039-6028(88)90452-9 |
0.342 |
|
| 1988 |
Hwang RQ, Williams ED, Park RL. Thermal disordering of the (√3×√3)R30° structure of Al on Si(111) Surface Science. 193: L53-L57. DOI: 10.1016/0039-6028(88)90317-2 |
0.301 |
|
| 1988 |
Mahamuni SR, Abell DT, Williams ED. Defect sensitivity of the growth of Nb on Si(111) Solid State Communications. 68: 145-147. DOI: 10.1016/0038-1098(88)90262-1 |
0.316 |
|
| 1987 |
Phaneuf RJ, Williams ED. Surface phase separation of vicinal Si(111). Physical Review Letters. 58: 2563-2566. PMID 10034784 DOI: 10.1103/Physrevlett.58.2563 |
0.303 |
|
| 1987 |
Idzerda YU, Williams ED, Einstein TL, Park RL. Electron-induced extended-fine-structure measurements of thin-film growth and reaction. Physical Review. B, Condensed Matter. 36: 5941-5948. PMID 9942273 DOI: 10.1103/Physrevb.36.5941 |
0.566 |
|
| 1987 |
Idzerda YU, Williams ED, Einstein TL, Park RL. Reaction and structure of Ti on Si probed by surface extended energy‐loss fine structure and extended appearance potential fine structure Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 847-851. DOI: 10.1116/1.574323 |
0.682 |
|
| 1987 |
Akinci G, Ohno T, Williams ED. Effects of surface defects on the orientation of NiSi2 formed on Si (111) substrates Applied Physics Letters. 50: 754-756. DOI: 10.1063/1.98035 |
0.387 |
|
| 1986 |
Vahakangas J, Williams ED, Park RL. Surface states in the epitaxial growth of titanium on copper (111). Physical Review. B, Condensed Matter. 33: 2281-2285. PMID 9938562 DOI: 10.1103/Physrevb.33.2281 |
0.307 |
|
| 1986 |
Vähäkangas J, Idzerda YU, Williams ED, Park RL. Initial growth of Ti on Si. Physical Review. B, Condensed Matter. 33: 8716-8723. PMID 9938273 DOI: 10.1103/Physrevb.33.8716 |
0.549 |
|
| 1986 |
Zhu QG, Iwasaki H, Williams ED, Park RL. Formation of iron silicide thin films Journal of Applied Physics. 60: 2629-2631. DOI: 10.1063/1.337136 |
0.304 |
|
| 1986 |
Idzerda YU, Williams ED, Park RL, Vähäkangas J. Initial formation of titanium silicide Surface Science Letters. 177. DOI: 10.1016/0167-2584(86)90721-8 |
0.592 |
|
| 1986 |
Qi-Gao Zhu, An-Dong Zhang, Williams ED, Park RL. On the detailed growth of thin silver films on Si(111) Surface Science. 172: 433-441. DOI: 10.1016/0039-6028(86)90765-X |
0.332 |
|
| 1985 |
Taylor DE, Williams ED, Park RL, Bartelt NC, Einstein TL. Two-dimensional ordering of chlorine on Ag(100). Physical Review. B, Condensed Matter. 32: 4653-4659. PMID 9937646 DOI: 10.1103/Physrevb.32.4653 |
0.493 |
|
| 1985 |
Idzerda YU, Williams ED, Einstein TL, Park RL. Surface extended electron loss fine structure: dependence on incident electron energy and collection solid angle Surface Science. 160: 75-86. DOI: 10.1016/0039-6028(85)91028-3 |
0.665 |
|
| 1984 |
Bartelt NC, Einstein TL, Williams ED. Summary Abstract: Relationship between many-parameter lattice gas systems and simpler models: Easy approximations for Tc Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 1006-1007. DOI: 10.1116/1.572640 |
0.49 |
|
| 1982 |
Williams ED, Weinberg WH, Sobrero AC. CO on Ru(001): Island size and disordering The Journal of Chemical Physics. 76: 1150-1161. DOI: 10.1063/1.443084 |
0.505 |
|
| 1982 |
Yates J, Williams E, Weinberg W. Reply to comments on “does chemisorbed carbon monoxide dissociate on rhodium?” by D.G. Castner, L.H. Dubois, B.A. Sexton and G.A. Somorjai Surface Science. 115: L93-L95. DOI: 10.1016/0039-6028(82)90398-3 |
0.415 |
|
| 1981 |
Williams ED, Weinberg W. Computations of profiles of low-energy electron diffraction beams for arrays of ordered islands Surface Science. 109: 574-590. DOI: 10.1016/0039-6028(81)90428-3 |
0.483 |
|
| 1980 |
Williams ED, Thiel PA, Weinberg WH, Yates JT. Segregation of co‐adsorbed species: Hydrogen and carbon monoxide on the (111) surface of rhodium The Journal of Chemical Physics. 72: 3496-3505. DOI: 10.1063/1.439613 |
0.604 |
|
| 1980 |
Yates J, Williams E, Weinberg W. Does chemisorbed carbon monoxide dissociate on rhodium? Surface Science. 91: 562-570. DOI: 10.1016/0039-6028(80)90351-9 |
0.502 |
|
| 1980 |
Chan C, Van Hove M, Weinberg W, Williams E. An R-factor analysis of several models of the reconstructed Ir(110)-(1 × 2) surface a Surface Science. 91: 440-448. DOI: 10.1016/0039-6028(80)90343-X |
0.478 |
|
| 1979 |
Chan C, Luke KL, Van Hove MA, Weinberg WH, Williams ED. Structural determination of the unreconstructed and the reconstructed (110) surfaces of iridium Journal of Vacuum Science and Technology. 16: 642-645. DOI: 10.1116/1.570042 |
0.484 |
|
| 1979 |
Williams ED, Weinberg W. The geometric structure of carbon monoxide chemisorbed on the ruthenium (001) surface at low temperatures ∗ Surface Science. 82: 93-101. DOI: 10.1016/0039-6028(79)90320-0 |
0.501 |
|
| 1979 |
Thiel P, Williams E, Yates J, Weinberg W. The chemisorption of Co on Rh(111) Surface Science. 84: 54-64. DOI: 10.1016/0039-6028(79)90279-6 |
0.623 |
|
| 1979 |
Chan C, van Hove M, Weinberg W, Williams E. Structural study of the reconstructed Ir(110)-(1 x 2) surface by low-energy electron diffraction Solid State Communications. 30: 47-49. DOI: 10.1016/0038-1098(79)91130-X |
0.486 |
|
| 1978 |
Williams ED, Cunningham SL, Weinberg WH. Abstract: Determination of adatom interaction energies by a Monte Carlo calculation: Oxygen on W(110) Journal of Vacuum Science and Technology. 15: 417-418. DOI: 10.1116/1.569584 |
0.454 |
|
| 1978 |
Williams ED, Cunningham SL, Weinberg WH. A determination of adatom–adatom interaction energies: Application to oxygen chemisorbed on the tungsten (110) surface The Journal of Chemical Physics. 68: 4688-4693. DOI: 10.1063/1.435579 |
0.485 |
|
| 1870 |
Wang X-, Phaneuf RJ, Williams ED. Comparison of LEED and STM measurements of vicinal Si(111) Journal of Microscopy. 152: 473-480. DOI: 10.1111/J.1365-2818.1988.Tb01410.X |
0.356 |
|
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