Ellen D. Williams - Publications

Affiliations: 
Physics University of Maryland, College Park, College Park, MD 
Area:
Nanostructures
Website:
http://www.physics.umd.edu/spg/awards.htm

194 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Yang Y, Williams ED. Comment on "Kinetics and reconstruction of steps at the Si(001) surface" Physical Review Letters. 65: 1285. PMID 10042223 DOI: 10.1103/Physrevlett.65.1285  0.327
2014 Sangwan V, Ballarotto V, Hines D, Fuhrer M, Williams E. Corrigendum to “Controlled growth, patterning and placement of carbon nanotube thin films” [Solid-State Electron. 54 (2010) 1204–1210] Solid-State Electronics. 93: 66. DOI: 10.1016/J.Sse.2013.07.002  0.767
2013 Yuan X, Yu L, Li J, Xie G, Rong T, Zhang L, Chen J, Meng Q, Irving AT, Wang D, Williams ED, Liu JP, Sadler AJ, Williams BR, Shen L, et al. ATF3 suppresses metastasis of bladder cancer by regulating gelsolin-mediated remodeling of the actin cytoskeleton. Cancer Research. 73: 3625-37. PMID 23536558 DOI: 10.1158/0008-5472.CAN-12-3879  0.322
2012 Chen JH, Li L, Cullen WG, Williams ED, Fuhrer MS. Reply Nature Physics. 8: 353. DOI: 10.1038/Nphys2306  0.561
2012 Groce MA, Conrad BR, Cullen WG, Pimpinelli A, Williams ED, Einstein TL. Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide Surface Science. 606: 53-56. DOI: 10.1016/J.Susc.2011.08.020  0.782
2011 Ghanem TK, Williams ED, Fuhrer MS. Characterization of the electrical contact between a conductive atomic force microscope cantilever and a carbon nanotube Journal of Applied Physics. 110. DOI: 10.1063/1.3626811  0.749
2011 Chen JH, Li L, Cullen WG, Williams ED, Fuhrer MS. Tunable Kondo effect in graphene with defects Nature Physics. 7: 535-538. DOI: 10.1038/Nphys1962  0.609
2011 Huang J, Hines DR, Jung BJ, Bronsgeest MS, Tunnell A, Ballarotto V, Katz HE, Fuhrer MS, Williams ED, Cumings J. Polymeric semiconductor/graphene hybrid field-effect transistors Organic Electronics: Physics, Materials, Applications. 12: 1471-1476. DOI: 10.1016/J.Orgel.2011.05.021  0.758
2011 Sangwan VK, Southard A, Moore TL, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED. Transfer printing approach to all-carbon nanoelectronics Microelectronic Engineering. 88: 3150-3154. DOI: 10.1016/J.Mee.2011.06.017  0.789
2010 Cullen WG, Yamamoto M, Burson KM, Chen JH, Jang C, Li L, Fuhrer MS, Williams ED. High-fidelity conformation of graphene to SiO2 topographic features. Physical Review Letters. 105: 215504. PMID 21231322 DOI: 10.1103/PhysRevLett.105.215504  0.594
2010 Sangwan VK, Ballarotto VW, Siegrist K, Williams ED. Characterizing voltage contrast in photoelectron emission microscopy. Journal of Microscopy. 238: 210-7. PMID 20579259 DOI: 10.1111/J.1365-2818.2009.03342.X  0.765
2010 Tao C, Cullen WG, Williams ED. Visualizing the electron scattering force in nanostructures. Science (New York, N.Y.). 328: 736-40. PMID 20448180 DOI: 10.1126/Science.1186648  0.57
2010 Williams ED, Bartelt NC. Thermodynamics of surface morphology. Science (New York, N.Y.). 251: 393-400. PMID 17775103 DOI: 10.1126/Science.251.4992.393  0.327
2010 Xiao S, Chen JH, Adam S, Williams ED, Fuhrer MS. Charged impurity scattering in bilayer graphene Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.041406  0.626
2010 Bevan KH, Guo H, Williams ED, Zhang Z. First-principles quantum transport theory of the enhanced wind force driving electromigration on Ag(111) Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235416  0.304
2010 Sangwan VK, Behnam A, Ballarotto VW, Fuhrer MS, Ural A, Williams ED. Optimizing transistor performance of percolating carbon nanotube networks Applied Physics Letters. 97. DOI: 10.1063/1.3469930  0.698
2009 Chen JH, Cullen WG, Jang C, Fuhrer MS, Williams ED. Defect scattering in graphene. Physical Review Letters. 102: 236805. PMID 19658959 DOI: 10.1103/Physrevlett.102.236805  0.624
2009 Stasevich TJ, Tao C, Cullen WG, Williams ED, Einstein TL. Impurity decoration for crystal shape control: C60 on Ag(111). Physical Review Letters. 102: 085501. PMID 19257751 DOI: 10.1103/Physrevlett.102.085501  0.66
2009 Stasevich TJ, Tao C, Cullen WG, Williams ED, Einstein TL. Impurity decoration for crystal shape control: C60 on Ag(111) Physical Review Letters. 102. DOI: 10.1103/PhysRevLett.102.085501  0.436
2009 Conrad BR, Tosado J, Dutton G, Dougherty DB, Jin W, Bonnen T, Schuldenfrei A, Cullen WG, Williams ED, Reutt-Robey JE, Robey SW. C60 cluster formation at interfaces with pentacene thin-film phases Applied Physics Letters. 95. DOI: 10.1063/1.3266857  0.777
2009 Conrad BR, Cullen WG, Riddick BC, Williams ED. Pentacene islands grown on ultra-thin SiO2 Surface Science. 603: L27-L30. DOI: 10.1016/J.Susc.2008.12.020  0.748
2009 Chen JH, Jang C, Ishigami M, Xiao S, Cullen WG, Williams ED, Fuhrer MS. Diffusive charge transport in graphene on SiO2 Solid State Communications. 149: 1080-1086. DOI: 10.1016/J.Ssc.2009.02.042  0.544
2009 Southard A, Sangwan V, Cheng J, Williams ED, Fuhrer MS. Solution-processed single walled carbon nanotube electrodes for organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 10: 1556-1561. DOI: 10.1016/J.Orgel.2009.09.001  0.709
2008 Jang C, Adam S, Chen JH, Williams ED, Das Sarma S, Fuhrer MS. Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering. Physical Review Letters. 101: 146805. PMID 18851558 DOI: 10.1103/Physrevlett.101.146805  0.627
2008 Tao C, Liu Q, Riddick BC, Riddick BS, Cullen WG, Reutt-Robey J, Weeks JD, Williams ED. Dynamic interfaces in an organic thin film. Proceedings of the National Academy of Sciences of the United States of America. 105: 16418-25. PMID 18765797 DOI: 10.1073/Pnas.0805811105  0.736
2008 Conrad BR, Gomar-Nadal E, Cullen WG, Pimpinelli A, Einstein TL, Williams ED. Effect of impurities on pentacene island nucleation Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.205328  0.78
2008 Tobias D, Ishigami M, Tselev A, Barbara P, Williams ED, Lobb CJ, Fuhrer MS. Origins of 1 f noise in individual semiconducting carbon nanotube field-effect transistors Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.033407  0.558
2008 Tunnell AJ, Ballarotto VW, Hines DR, Williams ED. Vertical integration on plastic substrates using transfer printing Applied Physics Letters. 93. DOI: 10.1063/1.3026744  0.768
2008 Sangwan VK, Ballarotto VW, Fuhrer MS, Williams ED. Facile fabrication of suspended as-grown carbon nanotube devices Applied Physics Letters. 93. DOI: 10.1063/1.2987457  0.715
2008 Chen JH, Jang C, Adam S, Fuhrer MS, Williams ED, Ishigami M. Charged-impurity scattering in graphene Nature Physics. 4: 377-381. DOI: 10.1038/Nphys935  0.539
2008 Tunnell AJ, Hines DR, Gomar-Nadal E, Williams ED. Printing-induced improvements of organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 9: 507-514. DOI: 10.1016/J.Orgel.2008.02.012  0.785
2007 Bondarchuk O, Cullen WG, Degawa M, Williams ED, Bole T, Rous PJ. Biased surface fluctuations due to current stress. Physical Review Letters. 99: 206801. PMID 18233173 DOI: 10.1103/Physrevlett.99.206801  0.615
2007 Tao CG, Cullen WG, Williams ED, Dasgupta C. Generalized survival in step fluctuations. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 76: 021601. PMID 17930045 DOI: 10.1103/Physreve.76.021601  0.533
2007 Ishigami M, Chen JH, Cullen WG, Fuhrer MS, Williams ED. Atomic structure of graphene on SiO2. Nano Letters. 7: 1643-8. PMID 17497819 DOI: 10.1021/Nl070613A  0.644
2007 Conrad BR, Cullen WG, Dougherty DB, Lyubinetsky I, Williams ED. Spatial first-passage statistics of Al/Si(111)-(square root 3 x square root 3) step fluctuations. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 75: 021603. PMID 17358349 DOI: 10.1103/Physreve.75.021603  0.785
2007 Tao C, Stasevich TJ, Cullen WG, Einstein TL, Williams ED. Metal-molecule interface fluctuations. Nano Letters. 7: 1495-9. PMID 17352508 DOI: 10.1021/Nl070210A  0.654
2007 Conrad BR, Cullen WG, Dougherty DB, Lyubinetsky I, Williams ED. Spatial first-passage statistics of Al/Si(111)-(3×3) step fluctuations Physical Review E - Statistical, Nonlinear, and Soft Matter Physics. 75. DOI: 10.1103/PhysRevE.75.021603  0.775
2007 Constantin M, Dasgupta C, Das Sarma S, Dougherty DB, Williams ED. Persistence and survival in equilibrium step fluctuations Journal of Statistical Mechanics: Theory and Experiment. DOI: 10.1088/1742-5468/2007/07/P07011  0.627
2007 Williams ED, Bondarchuk O, Tao CG, Yan W, Cullen WG, Rous PJ, Bole T. Temporal step fluctuations on a conductor surface: electromigration force, surface resistivity and low-frequency noise New Journal of Physics. 9: 387-387. DOI: 10.1088/1367-2630/9/10/387  0.586
2007 Conrad BR, Cullen WG, Yan W, Williams ED. Percolative effects on noise in pentacene transistors Applied Physics Letters. 91. DOI: 10.1063/1.2823577  0.721
2007 Esen G, Fuhrer MS, Ishigami M, Williams ED. Transmission line impedance of carbon nanotube thin films for chemical sensing Applied Physics Letters. 90. DOI: 10.1063/1.2709995  0.555
2007 Hines DR, Ballarotto VW, Williams ED, Shao Y, Solin SA. Transfer printing methods for the fabrication of flexible organic electronics Journal of Applied Physics. 101. DOI: 10.1063/1.2403836  0.645
2007 Tao C, Cullen W, Williams E, Hunyadi S, Murphy C. Surface morphology and step fluctuations on Ag nanowires Surface Science. 601: 4939-4943. DOI: 10.1016/J.Susc.2007.08.023  0.604
2007 Degawa M, Stasevich TJ, Pimpinelli A, Einstein TL, Williams ED. Facet-edge fluctuations with periphery diffusion kinetics Surface Science. 601: 3979-3983. DOI: 10.1016/J.Susc.2007.04.097  0.691
2007 Chen JH, Ishigami M, Jang C, Hines DR, Fuhrer MS, Williams ED. Printed graphene circuits Advanced Materials. 19: 3623-3627. DOI: 10.1002/Adma.200701059  0.712
2006 Degawa M, Stasevich TJ, Cullen WG, Pimpinelli A, Einstein TL, Williams ED. Distinctive fluctuations in a confined geometry. Physical Review Letters. 97: 080601. PMID 17026286 DOI: 10.1103/Physrevlett.97.080601  0.68
2006 Xu B, Tao C, Williams ED, Reutt-Robey JE. Coverage dependent supramolecular structures: C60:ACA monolayers on Ag(111). Journal of the American Chemical Society. 128: 8493-9. PMID 16802815 DOI: 10.1021/Ja060227F  0.718
2006 Sangwan VK, Hines DR, Ballarotto VW, Esen G, Fuhrer MS, Williams ED. Patterned Carbon Nanotube Thin-Film Transistors with Transfer-Print Assembly Mrs Proceedings. 963: 94-100. DOI: 10.1557/Proc-0963-Q10-57  0.73
2006 Degawa M, Thürmer K, Williams ED. Kinetic parameters of Pb obtained from crystallite evolutions Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 2070-2075. DOI: 10.1143/Jjap.45.2070  0.583
2006 Degawa M, Stasevich TJ, Cullen WG, Pimpinelli A, Einstein TL, Williams ED. Distinctive fluctuations in a confined geometry Physical Review Letters. 97. DOI: 10.1103/PhysRevLett.97.080601  0.638
2006 Degawa M, Thürmer K, Williams ED. Constrained evolution of nanocrystallites Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.155432  0.591
2006 Tao C, Stasevich TJ, Einstein TL, Williams ED. Step fluctuations on Ag(111) surfaces with C60 Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125436  0.654
2006 Szalma F, Dougherty DB, Degawa M, Williams ED, Haftel MI, Einstein TL. Correlations in nanoscale step fluctuations: Comparison of simulation and experiments Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.115413  0.775
2006 Shao Y, Solin SA, Hines DR, Williams ED. The effect of transfer printing on pentacene thin-film crystal structure Journal of Applied Physics. 100. DOI: 10.1063/1.2336301  0.642
2006 Ishigami M, Chen JH, Williams ED, Tobias D, Chen YF, Fuhrer MS. Hooge's constant for carbon nanotube field effect transistors Applied Physics Letters. 88. DOI: 10.1063/1.2206685  0.541
2005 Ranganathan M, Dougherty DB, Cullen WG, Zhao T, Weeks JD, Williams ED. Spiral evolution in a confined geometry. Physical Review Letters. 95: 225505. PMID 16384234 DOI: 10.1103/Physrevlett.95.225505  0.625
2005 Xu B, Tao C, Cullen WG, Reutt-Robey JE, Williams ED. Chiral symmetry breaking in two-dimensional C60-ACA intermixed systems. Nano Letters. 5: 2207-11. PMID 16277454 DOI: 10.1021/Nl051415R  0.71
2005 Dougherty DB, Tao C, Bondarchuk O, Cullen WG, Williams ED, Constantin M, Dasgupta C, Das Sarma S. Sampling-time effects for persistence and survival in step structural fluctuations. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 71: 021602. PMID 15783332 DOI: 10.1103/Physreve.71.021602  0.709
2005 Bondarchuk O, Dougherty DB, Degawa M, Williams ED, Constantin M, Dasgupta C, Das Sarma S. Correlation time for step structural fluctuations Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.045426  0.725
2005 Breban M, Romero DB, Mezhenny S, Ballarotto VW, Williams ED. Photocurrent probe of field-dependent mobility in organic thin-film transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2131183  0.594
2005 Hines DR, Mezhenny S, Breban M, Williams ED, Ballarotto VW, Esen G, Southard A, Fuhrer MS. Nanotransfer printing of organic and carbon nanotube thin-film transistors on plastic substrates Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901809  0.784
2005 Pimpinelli A, Degawa M, Einstein TL, Williams ED. A facet is not an island: Step-step interactions and the fluctuations of the boundary of a crystal facet Surface Science. 598: L355-L360. DOI: 10.1016/J.Susc.2005.09.023  0.666
2005 Degawa M, Williams ED. Barriers to shape evolution of supported nano-crystallites Surface Science. 595: 87-96. DOI: 10.1016/J.Susc.2005.08.012  0.57
2005 Degawa M, Szalma F, Williams ED. Nano-scale equilibrium crystal shapes Surface Science. 583: 126-138. DOI: 10.1016/J.Susc.2005.03.032  0.568
2004 Breban M, Mezhenny S, Hines DR, Romero DB, Ballarotto VW, Williams ED. Environmental Sensitivity of Pentacene Thin-Film Transistors Mrs Proceedings. 828. DOI: 10.1557/Proc-828-A4.4  0.718
2004 Williams ED. Nanoscale Structures: Lability, Length Scales, and Fluctuations Mrs Bulletin. 29: 621-629. DOI: 10.1557/Mrs2004.182  0.305
2004 Dougherty DB, Lyubinetsky I, Einstein TL, Williams ED. Distinguishing step relaxation mechanisms via pair correlation functions Physical Review B - Condensed Matter and Materials Physics. 70: 1-5. DOI: 10.1103/Physrevb.70.235422  0.716
2004 Siegrist K, Ballarotto VW, Breban M, Yongsunthon R, Williams ED. Imaging buried structures with photoelectron emission microscopy Applied Physics Letters. 84: 1419-1421. DOI: 10.1063/1.1650914  0.778
2004 Rous PJ, Yongsunthon R, Stanishevsky A, Williams ED. Real-space imaging of current distributions at the submicron scale using magnetic force microscopy: Inversion methodology Journal of Applied Physics. 95: 2477-2486. DOI: 10.1063/1.1641149  0.706
2004 Dougherty DB, Thürmer K, Degawa M, Cullen WG, Reutt-Robey JE, Williams ED. Triggered fast relaxation of metastable Pb crystallites Surface Science. 554: 233-244. DOI: 10.1016/J.Susc.2004.01.035  0.791
2003 Constantin M, Das Sarma S, Dasgupta C, Bondarchuk O, Dougherty DB, Williams ED. Infinite family of persistence exponents for interface fluctuations. Physical Review Letters. 91: 086103. PMID 14525262 DOI: 10.1103/Physrevlett.91.086103  0.646
2003 Siegrist K, Ballarotto VW, Williams ED. Quantifying Field-Induced Contrast Effects in Photoelectron Emission Microscopy Mrs Proceedings. 803. DOI: 10.1557/Proc-803-Gg3.9  0.321
2003 Siegrist K, Williams ED, Ballarotto VW. Characterizing topography-induced contrast in photoelectron emission microscopy Journal of Vacuum Science and Technology. 21: 1098-1102. DOI: 10.1116/1.1562185  0.75
2003 THüRMER K, Williams ED, Reutt-Robey JE. Dewetting dynamics of ultrathin silver films on Si(111) Physical Review B. 68: 155423. DOI: 10.1103/Physrevb.68.155423  0.402
2003 Yongsunthon R, Stanishevsky A, Williams ED, Rous PJ. Mapping electron flow using magnetic force microscopy Applied Physics Letters. 82: 3287-3289. DOI: 10.1063/1.1573349  0.711
2003 Schroll RD, Cohen SD, Einstein TL, Métois JJ, Gebremariam H, Richards HL, Williams ED. Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: Anomalous step-step repulsion Applied Surface Science. 212: 219-223. DOI: 10.1016/S0169-4332(03)00409-4  0.588
2003 Yongsunthon R, Rous PJ, Stanishevsky A, Siegrist K, Williams ED. Phase imaging of buried structures Applied Surface Science. 210: 6-11. DOI: 10.1016/S0169-4332(02)01470-8  0.778
2003 Thürmer K, Reutt-Robey JE, Williams ED. Nucleation limited crystal shape transformations Surface Science. 537: 123-133. DOI: 10.1016/S0039-6028(03)00600-9  0.647
2003 Dougherty DB, Bondarchuk O, Degawa M, Williams ED. Persistence exponents for step edge diffusion Surface Science. 527: L213-L218. DOI: 10.1016/S0039-6028(03)00017-7  0.728
2002 Thürmer K, Williams E, Reutt-Robey J. Autocatalytic oxidation of lead crystallite surfaces. Science (New York, N.Y.). 297: 2033-5. PMID 12242437 DOI: 10.1126/Science.297.5589.2033  0.66
2002 Dougherty DB, Lyubinetsky I, Williams ED, Constantin M, Dasgupta C, Das Sarma S. Experimental persistence probability for fluctuating steps. Physical Review Letters. 89: 136102. PMID 12225042 DOI: 10.1103/Physrevlett.89.136102  0.646
2002 Ballarotto VW, Breban M, Siegrist K, Phaneuf RJ, Williams ED. Photoelectron emission microscopy of ultrathin oxide covered devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2514-2518. DOI: 10.1116/1.1525007  0.594
2002 Cohen SD, Schroll RD, Einstein TL, Métois JJ, Gebremariam H, Richards HL, Williams ED. Si(111) step fluctuations at high temperature: Anomalous step-step repulsion Physical Review B. 66: 115310. DOI: 10.1103/Physrevb.66.115310  0.574
2002 Lyubinetsky I, Dougherty DB, Einstein TL, Williams ED. Dynamics of step fluctuations on a chemically heterogeneous surface of Al/Si(111)-(√3×√3) Physical Review B. 66. DOI: 10.1103/Physrevb.66.085327  0.741
2002 Yongsunthon R, Williams ED, McCoy J, Pego R, Stanishevsky A, Rous PJ. Test of response linearity for magnetic force microscopy data Journal of Applied Physics. 92: 1256-1261. DOI: 10.1063/1.1489701  0.693
2002 Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED. Model for doping-induced contrast in photoelectron emission microscopy Journal of Applied Physics. 91: 469-475. DOI: 10.1063/1.1423399  0.335
2001 Yongsunthon R, Williams ED, Stanishevsky A, McCoy J, Pego R, Rous PJ, Peckerar M. Magnetic Force Microscopy Signatures of Defects in Current-carrying Lines Mrs Proceedings. 699. DOI: 10.1557/Proc-699-R5.2  0.69
2001 Park JY, Phaneuf RJ, Williams ED. Conductance Imaging of the Depletion Region of Biased Silicon PN Junction Device Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J2.3  0.321
2001 Park JY, Phaneuf RJ, Williams ED. Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 523-526. DOI: 10.1116/1.1358883  0.34
2001 Thürmer K, Reutt-Robey JE, Williams ED, Uwaha M, Emundts A, Bonzel HP. Step Dynamics in 3D Crystal Shape Relaxation Physical Review Letters. 87: 186102. DOI: 10.1103/Physrevlett.87.186102  0.321
2001 Ganpule CS, Roytburd AL, Nagarajan V, Hill BK, Ogale SB, Williams ED, Ramesh R, Scott JF. Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films Physical Review B. 65: 14101. DOI: 10.1103/Physrevb.65.014101  0.302
2001 Shinde SR, Ogale AS, Ogale SB, Aggarwal S, Novikov V, Williams ED, Ramesh R. Self-organized pattern formation in the oxidation of supported iron thin films. i. an experimental study Physical Review B. 64. DOI: 10.1103/Physrevb.64.035408  0.321
2001 Ganpule CS, Nagarajan V, Li H, Ogale AS, Martinez AD, Ogale SB, Aggarwal S, Williams E, Wolf PD, Ramesh R. Direct observation of domain dynamics in lead zirconate titanate thin films Integrated Ferroelectrics. 32: 199-208. DOI: 10.1080/10584580108215690  0.3
2001 Nagarajan V, Ganpule CS, Li H, Salamanca-Riba L, Roytburd AL, Williams ED, Ramesh R. Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates Applied Physics Letters. 79: 2805-2807. DOI: 10.1063/1.1402645  0.309
2001 Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED, Yang WC, Nemanich RJ. Photon energy dependence of contrast in photoelectron emission microscopy of Si devices Applied Physics Letters. 78: 3547-3549. DOI: 10.1063/1.1376151  0.307
2001 Yongsunthon R, Stanishevsky A, McCoy J, Williams ED. Observation of current crowding near fabricated voids in gold lines Applied Physics Letters. 78: 2661-2663. DOI: 10.1063/1.1368190  0.706
2001 Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED. PEEM imaging and modeling of dopant-concentration variation in Si devices Characterization and Metrology For Ulsi Technology. 550: 307-311. DOI: 10.1063/1.1354416  0.337
2001 Aggarwal S, Ogale SB, Ganpule CS, Shinde SR, Novikov VA, Monga AP, Burr MR, Ramesh R, Ballarotto V, Williams ED. Oxide nanostructures through self-assembly Applied Physics Letters. 78: 1442-1444. DOI: 10.1063/1.1352666  0.304
2001 Ichimiya A, Hayashi K, Williams ED, Einstein TL, Uwaha M, Watanabe K. Decay of silicon mounds: Scaling laws and description with continuum step parameters Applied Surface Science. 175: 33-35. DOI: 10.1016/S0169-4332(01)00157-X  0.576
2001 Lyubinetsky I, Dougherty DB, Richards HL, Einstein TL, Williams ED. Step wandering on Al/Si(1 1 1)-(√3 × √3) surface at high temperatures Surface Science. 492: L671-L676. DOI: 10.1016/S0039-6028(01)01462-5  0.72
2001 Degawa M, Thürmer K, Morishima I, Minoda H, Yagi K, Williams E. Initial stage of in-phase step wandering on Si(111) vicinal surfaces Surface Science. 487: 171-179. DOI: 10.1016/S0039-6028(01)01089-5  0.603
2001 Emundts A, Bonzel HP, Wynblatt P, Thürmer K, Reutt-Robey J, Williams ED. Continuous and discontinuous transitions on 3D equilibrium crystal shapes: A new look at Pb and Au Surface Science. 481: 13-24. DOI: 10.1016/S0039-6028(01)01055-X  0.663
2000 Ganpule CS, Roytburd AL, Nagarajan V, Stanishevsky A, Melngailis J, Williams ED, Ramesh R. Nanoscale electromechanical phenomena in ferroelectric thin films Mrs Proceedings. 655. DOI: 10.1557/Proc-655-Cc1.5.1  0.337
2000 Aggarwal S, Ganpule C, Jenkins IG, Nagaraj B, Stanishevsky A, Melngailis J, Williams E, Ramesh R. High density ferroelectric memories: Materials, processing and scaling Integrated Ferroelectrics. 28: 213-225. DOI: 10.1080/10584580008222233  0.323
2000 Nagarajan V, Alpay SP, Ganpule CS, Nagaraj BK, Aggarwal S, Williams ED, Roytburd AL, Ramesh R. Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films Applied Physics Letters. 77: 438-440. DOI: 10.1063/1.127002  0.323
2000 Park JY, Phaneuf RJ, Williams ED. Variation of threshold field in field induced fabrication of Au nanodots on ultrathin in situ grown silicon oxide Surface Science. 470: L69-L74. DOI: 10.1016/S0039-6028(00)00897-9  0.311
2000 Ballarotto VW, Siegrist K, Phaneuf RJ, Williams ED, Mogren S. PEEM imaging of dopant contrast in Si(001) Surface Science. 461. DOI: 10.1016/S0039-6028(00)00619-1  0.32
2000 Sudoh K, Iwasaki H, Williams ED. Facet growth due to attractive step-step interactions on vicinal Si (113) Surface Science. 452. DOI: 10.1016/S0039-6028(00)00395-2  0.342
1999 Thürmer K, Liu DJ, Williams ED, Weeks JD. Onset of step antibanding instability due to surface electromigration Physical Review Letters. 83: 5531-5534. DOI: 10.1103/Physrevlett.83.5531  0.35
1999 Toroczkai Z, Williams ED. Nanoscale Fluctuations at Solid Surfaces Physics Today. 52: 24-28. DOI: 10.1063/1.882897  0.321
1999 Nagarajan V, Ganpule CS, Nagaraj B, Aggarwal S, Alpay SP, Roytburd AL, Williams ED, Ramesh R. Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films Applied Physics Letters. 75: 4183-4185. DOI: 10.1063/1.125576  0.342
1999 Ganpule CS, Stanishevsky A, Aggarwal S, Melngailis J, Williams E, Ramesh R, Joshi V, Araujo CPd. Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films Applied Physics Letters. 75: 3874-3876. DOI: 10.1063/1.125485  0.305
1999 Jeong H, Williams ED. Steps on surfaces: experiment and theory Surface Science Reports. 34: 171-294. DOI: 10.1016/S0167-5729(98)00010-7  0.329
1999 Fu ES, Wang X, Williams ED. Characterization of structures fabricated by atomic force microscope lithography Surface Science. 438: 58-67. DOI: 10.1016/S0039-6028(99)00552-X  0.354
1998 Sudoh K, Yoshinobu T, Iwasaki H, Williams ED. Step Fluctuations on Vicinal Si(113) Physical Review Letters. 80: 5152-5155. DOI: 10.1103/Physrevlett.80.5152  0.31
1998 Lanczycki CJ, Kotlyar R, Fu E, Yang Y-, Williams ED, Sarma SD. Growth Of Si On The Si(111) Surface Physical Review B. 57: 13132-13148. DOI: 10.1103/Physrevb.57.13132  0.307
1998 Hildner ML, Phaneuf RJ, Williams ED. Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy Applied Physics Letters. 72: 3314-3316. DOI: 10.1063/1.121635  0.343
1998 Schwennicke C, Wang X-, Einstein TL, Williams ED. Evolution of surface morphology of vicinal Si(111) surfaces after aluminum deposition Surface Science. 418: 22-31. DOI: 10.1016/S0039-6028(98)00658-X  0.581
1998 Wang X, Williams ED. Step structures on Br-chemisorbed vicinal Si(111) Surface Science. 400: 220-231. DOI: 10.1016/S0039-6028(97)00864-9  0.38
1998 Giesen M, Phaneuf RJ, Williams ED, Einstein TL. Photoemission electron microscopy of Schottky contacts Surface Science. 396: 411-421. DOI: 10.1016/S0039-6028(97)00696-1  0.586
1998 Williams ED. Nanostructure evolution and electromigration on silicon: Experimental application of length-scaling predictions Solid State Communications. 107: 681-691. DOI: 10.1016/S0038-1098(98)00214-2  0.361
1997 Tsai V, Wang X-, Williams ED, Schneir J, Dixson R. Conformal oxides on Si surfaces Applied Physics Letters. 71: 1495-1497. DOI: 10.1063/1.119947  0.357
1997 Fu ES, Liu DJ, Johnson MD, Weeks JD, Williams ED. The effective charge in surface electromigration Surface Science. 385: 259-269. DOI: 10.1016/S0039-6028(97)00188-X  0.336
1997 Giesen M, Phaneuf RJ, Williams ED, Einstein TL, Ibach H. Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy Applied Physics A. 64: 423-430. DOI: 10.1007/S003390050500  0.557
1996 Fu ES, Johnson MD, Liu D, Weeks JD, Williams ED. Size Scaling in the Decay of Metastable Structures. Physical Review Letters. 77: 1091-1094. PMID 10062988 DOI: 10.1103/Physrevlett.77.1091  0.316
1996 Williams ED, Fu ES, Li B. Evolution of Morphology During Etching of Si Mrs Proceedings. 466. DOI: 10.1557/Proc-466-157  0.301
1996 Yang Y-, Fu ES, Williams ED. An STM study of current-induced step bunching on Si(111) Surface Science. 356: 101-111. DOI: 10.1016/0039-6028(96)00033-7  0.375
1996 Ryland RG, Hasegawa S, Williams ED. Silicon motion during antimony deposition on Si(111) Surface Science. 345: 222-234. DOI: 10.1016/0039-6028(95)00864-0  0.782
1995 Kodiyalam S, Khor KE, Bartelt NC, Williams ED, Sarma SD. Energetics of vicinal Si(111) steps using empirical potentials. Physical Review B. 51: 5200-5213. PMID 9979396 DOI: 10.1103/Physrevb.51.5200  0.326
1995 Williams ED, Fu E, Yang YN, Kandel D, Weeks JD. Measurement of the anisotropy ratio during current-induced step bunching Surface Science. 336: L746-L752. DOI: 10.1016/0039-6028(95)00551-X  0.335
1994 Hasegawa S, Ryland RG, Williams ED. Interface roughening in surfactant deposition Applied Physics Letters. 65: 2609-2611. DOI: 10.1063/1.112583  0.784
1994 Williams ED, Phaneuf R, Wei J, Bartelt N, Einstein T. Erratum to “thermodynamics and statistical mechanics of the faceting of stepped Si(111)” [Surface Science 294 (1993) 219] Surface Science. 310: 451-452. DOI: 10.1016/0039-6028(94)91407-9  0.543
1994 Jung TM, Phaneuf RJ, Williams ED. Sublimation and phase transitions on singular and vicinal Si(111) surfaces Surface Science. 301: 129-135. DOI: 10.1016/0039-6028(94)91294-7  0.324
1994 Bartelt NC, Einstein TL, Williams ED. Measuring surface mass diffusion coefficients by observing step fluctuations Surface Science. 312: 411-421. DOI: 10.1016/0039-6028(94)90732-3  0.562
1994 Williams ED. Surface steps and surface morphology: understanding macroscopic phenomena from atomic observations Surface Science. 502-524. DOI: 10.1016/0039-6028(94)90678-5  0.319
1994 Rous PJ, Einstein TL, Williams ED. Theory of surface electromigration on metals: application to self-electromigration on Cu(111) Surface Science. 315: L995-L1002. DOI: 10.1016/0039-6028(94)90532-0  0.549
1994 Li B, Bartelt NC, Williams ED. The contact angles of trapped steps Chemical Physics Letters. 217: 595-599. DOI: 10.1016/0009-2614(93)E1437-L  0.336
1993 Phaneuf RJ, Bartelt NC, Williams ED, Swiech W, Bauer E. Crossover from metastable to unstable facet growth on Si(111). Physical Review Letters. 71: 2284-2287. PMID 10054634 DOI: 10.1103/Physrevlett.71.2284  0.353
1993 Bartelt NC, Goldberg JL, Einstein TL, Williams ED, Heyraud JC, Métois JJ. Brownian motion of steps on Si(111). Physical Review. B, Condensed Matter. 48: 15453-15456. PMID 10008088 DOI: 10.1103/Physrevb.48.15453  0.56
1993 Williams ED, Phaneuf RJ, Wei J, Bartelt NC, Einstein TL. Thermodynamics and statistical mechanics of the faceting of stepped Si(111) Surface Science. 294: 219-242. DOI: 10.1016/0167-2584(93)91093-4  0.58
1992 Wei J, Wang X, Goldberg JL, Bartelt NC, Williams ED. Step-height mixtures on vicinal Si(111) surfaces. Physical Review Letters. 68: 3885-3888. PMID 10045829 DOI: 10.1103/Physrevlett.68.3885  0.366
1992 Einstein TL, Jung TM, Bartelt NC, Williams ED, Rottman C. Step doubling and related transitions on vicinal surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 2600-2605. DOI: 10.1116/1.577944  0.546
1992 Bartelt NC, Einstein TL, Williams ED. The role of step collisions on diffraction from vicinal surfaces Surface Science. 276: 308-324. DOI: 10.1016/0167-2584(92)90095-M  0.584
1992 Bartelt NC, Goldberg JL, Einstein TL, Williams ED. The equilibration of terrace width distributions on stepped surfaces Surface Science. 273: 252-260. DOI: 10.1016/0039-6028(92)90290-M  0.562
1991 Williams ED, Phaneuf RJ, Bartelt NC, Świe¸ch W, Bauer E. The Role of Surface Stress in the Faceting of Stepped Si(111) Surfaces Mrs Proceedings. 238: 219. DOI: 10.1557/Proc-238-219  0.333
1991 Li B, Williams ED. Stability of the YBa 2 Cu 3 O 7− x −Si interface Journal of Materials Research. 6: 1634-1640. DOI: 10.1557/Jmr.1991.1634  0.334
1991 Goldberg JL, Wang X‐, Wei J, Bartelt NC, Williams ED. Quantization of terrace widths on vicinal Si(111) Journal of Vacuum Science and Technology. 9: 1868-1873. DOI: 10.1116/1.577536  0.355
1991 Wei J, Wang X, Bartelt NC, Williams ED, Tung RT. The precipitation of kinks on stepped Si(111) surfaces Journal of Chemical Physics. 94: 8384-8389. DOI: 10.1063/1.460070  0.343
1991 Goldberg JL, Wang XS, Bartelt NC, Williams ED. Surface height correlation functions of vicinal Si(111) surfaces using scanning tunneling microscopy Surface Science. 249: L285-L292. DOI: 10.1016/0039-6028(91)90815-A  0.344
1991 Wei J, Williams ED, Park RL. Low-energy electron diffraction study of the reconstruction and orientational stability of Si(331) Surface Science. 250: L368-L372. DOI: 10.1016/0039-6028(91)90698-R  0.34
1991 Jung TM, Phaneuf RJ, Williams ED. Step structure and surface reconstruction on vicinal Ge(111) surfaces Surface Science. 254: 235-250. DOI: 10.1016/0039-6028(91)90656-D  0.337
1991 Bartelt NC, Einstein TL, Williams ED. Diffraction from stepped surfaces in thermal equilibrium Surface Science. 244: 149-159. DOI: 10.1016/0039-6028(91)90178-U  0.574
1990 Wang X, Goldberg JL, Bartelt NC, Einstein TL, Williams ED. Terrace-width distributions on vicinal Si(111). Physical Review Letters. 65: 2430-2433. PMID 10042546 DOI: 10.1103/Physrevlett.65.2430  0.535
1990 Yang Y, Williams ED, Park RL, Bartelt NC, Einstein TL. Disordering of the (3 x 1) reconstruction on Si(113) and the chiral three-state Potts model. Physical Review Letters. 64: 2410-2413. PMID 10041705 DOI: 10.1103/Physrevlett.64.2410  0.528
1990 Ohno TR, Williams ED. Step structure and interface morphology: Arsenic on vicinal silicon surfaces Journal of Vacuum Science & Technology B. 8: 874-883. DOI: 10.1116/1.584981  0.361
1990 Yang Y, Williams ED. The role of carbon in the faceting of silicon surfaces on the (111) to (001) azimuth Journal of Vacuum Science and Technology. 8: 2481-2488. DOI: 10.1116/1.576719  0.354
1990 Bartelt NC, Einstein TL, Williams ED. The influence of step-step interactions on step wandering Surface Science. 240: L591-L598. DOI: 10.1016/0039-6028(90)90722-K  0.577
1989 Hwang RQ, Williams ED, Park RL. High-resolution low-energy electron-diffraction study of the phase diagram of vicinal Si(111) surfaces. Physical Review. B, Condensed Matter. 40: 11716-11722. PMID 9991774 DOI: 10.1103/Physrevb.40.11716  0.301
1989 Bartelt NC, Williams ED, Phaneuf RJ, Yang Y, Sarma SD. Orientational stability of silicon surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1898-1905. DOI: 10.1116/1.576025  0.355
1989 Ohno TR, Williams ED. Arsenic‐induced step rearrangements on vicinal Si (111) substrates Applied Physics Letters. 55: 2628-2630. DOI: 10.1063/1.101957  0.364
1989 Williams ED, Bartelt NC. Surface faceting and the equilibrium crystal shape Ultramicroscopy. 31: 36-48. DOI: 10.1016/0304-3991(89)90032-6  0.315
1989 Yang Y, Williams ED. Carbon-induced faceting of Si(112) Surface Science. 215: 102-110. DOI: 10.1016/0039-6028(89)90703-6  0.321
1988 Phaneuf RJ, Williams ED, Bartelt NC. Temperature dependence of vicinal Si(111) surfaces. Physical Review. B, Condensed Matter. 38: 1984-1993. PMID 9946485 DOI: 10.1103/Physrevb.38.1984  0.333
1988 Phaneuf RJ, Williams ED. Summary Abstract: Surface phase separation of vicinal Si(111) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 657. DOI: 10.1116/1.575146  0.305
1988 Phaneuf RJ, Williams ED. Metastable structures of Si(111) formed by laser-quenching Surface Science. 195: 330-340. DOI: 10.1016/0039-6028(88)90799-6  0.347
1988 Akinci G, Ohno TR, Williams ED. NiSi2 on Si(111): II. Effects of substrate temperature and defect structure Surface Science. 201: 27-46. DOI: 10.1016/0039-6028(88)90595-X  0.374
1988 Akinci G, Ohno TR, Williams ED. NiSi2 on Si(111) I. Effects of substrate cleaning procedure and reconstruction Surface Science. 193: 534-548. DOI: 10.1016/0039-6028(88)90452-9  0.342
1988 Hwang RQ, Williams ED, Park RL. Thermal disordering of the (√3×√3)R30° structure of Al on Si(111) Surface Science. 193: L53-L57. DOI: 10.1016/0039-6028(88)90317-2  0.301
1988 Mahamuni SR, Abell DT, Williams ED. Defect sensitivity of the growth of Nb on Si(111) Solid State Communications. 68: 145-147. DOI: 10.1016/0038-1098(88)90262-1  0.316
1987 Phaneuf RJ, Williams ED. Surface phase separation of vicinal Si(111). Physical Review Letters. 58: 2563-2566. PMID 10034784 DOI: 10.1103/Physrevlett.58.2563  0.303
1987 Idzerda YU, Williams ED, Einstein TL, Park RL. Electron-induced extended-fine-structure measurements of thin-film growth and reaction. Physical Review. B, Condensed Matter. 36: 5941-5948. PMID 9942273 DOI: 10.1103/Physrevb.36.5941  0.566
1987 Idzerda YU, Williams ED, Einstein TL, Park RL. Reaction and structure of Ti on Si probed by surface extended energy‐loss fine structure and extended appearance potential fine structure Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 847-851. DOI: 10.1116/1.574323  0.682
1987 Akinci G, Ohno T, Williams ED. Effects of surface defects on the orientation of NiSi2 formed on Si (111) substrates Applied Physics Letters. 50: 754-756. DOI: 10.1063/1.98035  0.386
1986 Vahakangas J, Williams ED, Park RL. Surface states in the epitaxial growth of titanium on copper (111). Physical Review. B, Condensed Matter. 33: 2281-2285. PMID 9938562 DOI: 10.1103/Physrevb.33.2281  0.307
1986 Vähäkangas J, Idzerda YU, Williams ED, Park RL. Initial growth of Ti on Si. Physical Review. B, Condensed Matter. 33: 8716-8723. PMID 9938273 DOI: 10.1103/Physrevb.33.8716  0.549
1986 Zhu QG, Iwasaki H, Williams ED, Park RL. Formation of iron silicide thin films Journal of Applied Physics. 60: 2629-2631. DOI: 10.1063/1.337136  0.304
1986 Idzerda YU, Williams ED, Park RL, Vähäkangas J. Initial formation of titanium silicide Surface Science Letters. 177. DOI: 10.1016/0167-2584(86)90721-8  0.592
1986 Qi-Gao Zhu, An-Dong Zhang, Williams ED, Park RL. On the detailed growth of thin silver films on Si(111) Surface Science. 172: 433-441. DOI: 10.1016/0039-6028(86)90765-X  0.332
1985 Taylor DE, Williams ED, Park RL, Bartelt NC, Einstein TL. Two-dimensional ordering of chlorine on Ag(100). Physical Review. B, Condensed Matter. 32: 4653-4659. PMID 9937646 DOI: 10.1103/Physrevb.32.4653  0.493
1985 Idzerda YU, Williams ED, Einstein TL, Park RL. Surface extended electron loss fine structure: dependence on incident electron energy and collection solid angle Surface Science. 160: 75-86. DOI: 10.1016/0039-6028(85)91028-3  0.665
1984 Bartelt NC, Einstein TL, Williams ED. Summary Abstract: Relationship between many-parameter lattice gas systems and simpler models: Easy approximations for Tc Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 1006-1007. DOI: 10.1116/1.572640  0.49
1982 Williams ED, Weinberg WH, Sobrero AC. CO on Ru(001): Island size and disordering The Journal of Chemical Physics. 76: 1150-1161. DOI: 10.1063/1.443084  0.505
1982 Yates J, Williams E, Weinberg W. Reply to comments on “does chemisorbed carbon monoxide dissociate on rhodium?” by D.G. Castner, L.H. Dubois, B.A. Sexton and G.A. Somorjai Surface Science. 115: L93-L95. DOI: 10.1016/0039-6028(82)90398-3  0.415
1981 Williams ED, Weinberg W. Computations of profiles of low-energy electron diffraction beams for arrays of ordered islands Surface Science. 109: 574-590. DOI: 10.1016/0039-6028(81)90428-3  0.483
1980 Williams ED, Thiel PA, Weinberg WH, Yates JT. Segregation of co‐adsorbed species: Hydrogen and carbon monoxide on the (111) surface of rhodium The Journal of Chemical Physics. 72: 3496-3505. DOI: 10.1063/1.439613  0.604
1980 Yates J, Williams E, Weinberg W. Does chemisorbed carbon monoxide dissociate on rhodium? Surface Science. 91: 562-570. DOI: 10.1016/0039-6028(80)90351-9  0.502
1980 Chan C, Van Hove M, Weinberg W, Williams E. An R-factor analysis of several models of the reconstructed Ir(110)-(1 × 2) surface a Surface Science. 91: 440-448. DOI: 10.1016/0039-6028(80)90343-X  0.478
1979 Chan C, Luke KL, Van Hove MA, Weinberg WH, Williams ED. Structural determination of the unreconstructed and the reconstructed (110) surfaces of iridium Journal of Vacuum Science and Technology. 16: 642-645. DOI: 10.1116/1.570042  0.484
1979 Williams ED, Weinberg W. The geometric structure of carbon monoxide chemisorbed on the ruthenium (001) surface at low temperatures ∗ Surface Science. 82: 93-101. DOI: 10.1016/0039-6028(79)90320-0  0.501
1979 Thiel P, Williams E, Yates J, Weinberg W. The chemisorption of Co on Rh(111) Surface Science. 84: 54-64. DOI: 10.1016/0039-6028(79)90279-6  0.622
1979 Chan C, van Hove M, Weinberg W, Williams E. Structural study of the reconstructed Ir(110)-(1 x 2) surface by low-energy electron diffraction Solid State Communications. 30: 47-49. DOI: 10.1016/0038-1098(79)91130-X  0.486
1978 Williams ED, Cunningham SL, Weinberg WH. Abstract: Determination of adatom interaction energies by a Monte Carlo calculation: Oxygen on W(110) Journal of Vacuum Science and Technology. 15: 417-418. DOI: 10.1116/1.569584  0.453
1978 Williams ED, Cunningham SL, Weinberg WH. A determination of adatom–adatom interaction energies: Application to oxygen chemisorbed on the tungsten (110) surface The Journal of Chemical Physics. 68: 4688-4693. DOI: 10.1063/1.435579  0.484
1870 Wang X-, Phaneuf RJ, Williams ED. Comparison of LEED and STM measurements of vicinal Si(111) Journal of Microscopy. 152: 473-480. DOI: 10.1111/J.1365-2818.1988.Tb01410.X  0.355
Show low-probability matches.