Wenyuan Jiao - Publications

Affiliations: 
2010-2015 Electrical and Computer Engineering Duke University, Durham, NC 

11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Collar KN, Li J, Jiao W, Kong W, Brown AS. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. Nanotechnology. 29: 035604. PMID 29186010 DOI: 10.1088/1361-6528/Aa9E34  0.547
2017 Collar K, Li J, Jiao W, Guan Y, Losurdo M, Humlicek J, Brown AS. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy Aip Advances. 7: 075016. DOI: 10.1063/1.4986751  0.481
2017 Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy Aip Advances. 7: 035109. DOI: 10.1063/1.4973637  0.535
2016 Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix Applied Physics Letters. 108. DOI: 10.1063/1.4953408  0.563
2015 Giangregorio MM, Jiao W, Bianco GV, Capezzuto P, Brown AS, Bruno G, Losurdo M. Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids. Nanoscale. PMID 26158222 DOI: 10.1039/C5Nr02610E  0.523
2015 Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4931942  0.547
2015 Kong W, Jiao WY, Li JC, Collar K, Kim TH, Leach JH, Brown AS. Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4927245  0.552
2015 Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, Kim TH, Kuech TF, Brown AS. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation Aip Advances. 5. DOI: 10.1063/1.4922139  0.552
2014 Losurdo M, Yi C, Suvorova A, Rubanov S, Kim TH, Giangregorio MM, Jiao W, Bergmair I, Bruno G, Brown AS. Demonstrating the capability of the high-performance plasmonic gallium-graphene couple. Acs Nano. 8: 3031-41. PMID 24575951 DOI: 10.1021/Nn500472R  0.604
2014 Losurdo M, Bergmair I, Dastmalchi B, Kim TH, Giangregroio MM, Jiao W, Bianco GV, Brown AS, Hingerl K, Bruno G. Graphene as an electron shuttle for silver deoxidation: Removing a key barrier to plasmonics and metamaterials for sers in the visible Advanced Functional Materials. 24: 1864-1878. DOI: 10.1002/Adfm.201303135  0.528
2012 Yi C, Kim TH, Jiao W, Yang Y, Lazarides A, Hingerl K, Bruno G, Brown A, Losurdo M. Evidence of plasmonic coupling in gallium nanoparticles/graphene/SiC. Small (Weinheim An Der Bergstrasse, Germany). 8: 2721-30. PMID 22674808 DOI: 10.1002/Smll.201200694  0.605
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