| Year |
Citation |
Score |
| 2020 |
von den Driesch N, Wirths S, Troitsch R, Mussler G, Breuer U, Moutanabbir O, Grützmacher D, Buca D. Thermally activated diffusion and lattice relaxation in (Si)GeSn materials Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.033604 |
0.349 |
|
| 2020 |
Grange T, Mukherjee S, Capellini G, Montanari M, Persichetti L, Gaspare LD, Birner S, Attiaoui A, Moutanabbir O, Virgilio M, Seta MD. Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering Physical Review Applied. 13: 44062. DOI: 10.1103/Physrevapplied.13.044062 |
0.358 |
|
| 2020 |
Bouthillier É, Assali S, Nicolas J, Moutanabbir O. Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors Semiconductor Science and Technology. 35: 95006. DOI: 10.1088/1361-6641/Ab9846 |
0.365 |
|
| 2020 |
An Q, Fortin-Deschênes M, Yu G, Moutanabbir O, Guo H. Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys Journal of Applied Physics. 127: 25305. DOI: 10.1063/1.5131262 |
0.356 |
|
| 2020 |
Nicolas J, Assali S, Mukherjee S, Lotnyk A, Moutanabbir O. Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn Crystal Growth & Design. 20: 3493-3498. DOI: 10.1021/Acs.Cgd.0C00270 |
0.402 |
|
| 2019 |
Fortin-Deschênes M, Waller O, An Q, Lagos MJ, Botton GA, Guo H, Moutanabbir O. 2D Antimony-Arsenic Alloys. Small (Weinheim An Der Bergstrasse, Germany). e1906540. PMID 31880095 DOI: 10.1002/Smll.201906540 |
0.322 |
|
| 2019 |
Mukherjee S, Attiaoui A, Bauer M, Moutanabbir O. 3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices. Acs Applied Materials & Interfaces. PMID 31808669 DOI: 10.1021/Acsami.9B13802 |
0.402 |
|
| 2019 |
Fortin-Deschênes M, Jacobberger RM, Deslauriers CA, Waller O, Bouthillier É, Arnold MS, Moutanabbir O. Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials (Deerfield Beach, Fla.). e1900569. PMID 30968486 DOI: 10.1002/Adma.201900569 |
0.346 |
|
| 2019 |
Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, et al. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale. PMID 30821309 DOI: 10.1039/C9Nr00713J |
0.317 |
|
| 2019 |
Assali S, Elsayed M, Nicolas J, Liedke MO, Wagner A, Butterling M, Krause-Rehberg R, Moutanabbir O. Vacancy complexes in nonequilibrium germanium-tin semiconductors Applied Physics Letters. 114: 251907. DOI: 10.1063/1.5108878 |
0.389 |
|
| 2019 |
Assali S, Nicolas J, Moutanabbir O. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation Journal of Applied Physics. 125: 025304. DOI: 10.1063/1.5050273 |
0.474 |
|
| 2018 |
Mukherjee S, Givan U, Senz S, de la Mata M, Arbiol J, Moutanabbir O. Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder. Nano Letters. PMID 29694788 DOI: 10.1021/Acs.Nanolett.8B00612 |
0.339 |
|
| 2018 |
Mamun MA, Tapily K, Moutanabbir O, Baumgart H, Elmustafa AA. Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0131804Jss |
0.316 |
|
| 2018 |
Assali S, Attiaoui A, Mukherjee S, Nicolas J, Moutanabbir O. TEOS layers for low temperature processing of group IV optoelectronic devices Journal of Vacuum Science & Technology B. 36: 061204. DOI: 10.1116/1.5047909 |
0.398 |
|
| 2018 |
Assali S, Nicolas J, Mukherjee S, Dijkstra A, Moutanabbir O. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission Applied Physics Letters. 112: 251903. DOI: 10.1063/1.5038644 |
0.477 |
|
| 2018 |
Attiaoui A, Wirth S, Blanchard-Dionne A, Meunier M, Hartmann JM, Buca D, Moutanabbir O. Extreme IR absorption in group IV-SiGeSn core-shell nanowires Journal of Applied Physics. 123: 223102. DOI: 10.1063/1.5021393 |
0.442 |
|
| 2018 |
Fortin-Deschênes M, Moutanabbir O. Recovering the Semiconductor Properties of the Epitaxial Group V 2D Materials Antimonene and Arsenene Journal of Physical Chemistry C. 122: 9162-9168. DOI: 10.1021/Acs.Jpcc.8B00044 |
0.327 |
|
| 2017 |
Fortin-Deschênes M, Waller O, Mentes TO, Locatelli A, Mukherjee S, Genuzio F, Levesque PL, Hebert A, Martel R, Moutanabbir O. Synthesis of Antimonene on Germanium. Nano Letters. PMID 28678509 DOI: 10.1021/Acs.Nanolett.7B02111 |
0.358 |
|
| 2017 |
Jung D, Faucher J, Mukherjee S, Akey A, Ironside DJ, Cabral M, Sang X, Lebeau J, Bank SR, Buonassisi T, Moutanabbir O, Lee ML. Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications. 8: 14204. PMID 28128282 DOI: 10.1038/Ncomms14204 |
0.402 |
|
| 2017 |
Mukherjee S, Kodali N, Isheim D, Wirths S, Hartmann JM, Buca D, Seidman DN, Moutanabbir O. Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors Physical Review B. 95. DOI: 10.1103/Physrevb.95.161402 |
0.402 |
|
| 2017 |
Abboud Z, Moutanabbir O. Temperature-Dependent in Situ Studies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters Journal of Physical Chemistry C. 121: 3396. DOI: 10.1021/Acs.Jpcc.6B11426 |
0.317 |
|
| 2016 |
Fortin-Deschênes M, Levesque PL, Martel R, Moutanabbir O. Dynamics and Mechanisms of Exfoliated Black Phosphorus Sublimation. The Journal of Physical Chemistry Letters. 7: 1667-74. PMID 27097073 DOI: 10.1021/Acs.Jpclett.6B00584 |
0.383 |
|
| 2016 |
Moutanabbir O, Isheim D, Mao Z, Seidman DN. Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology. 27: 205706. PMID 27071742 DOI: 10.1088/0957-4484/27/20/205706 |
0.365 |
|
| 2016 |
Mukherjee S, Watanabe H, Isheim D, Seidman DN, Moutanabbir O. Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters. PMID 26741402 DOI: 10.1021/Acs.Nanolett.5B04728 |
0.32 |
|
| 2016 |
Chagnon D, Pippel E, Senz S, Moutanabbir O. Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport The Journal of Physical Chemistry C. 120: 2932-2940. DOI: 10.1021/Acs.Jpcc.5B07361 |
0.338 |
|
| 2016 |
Baribeau JM, Bauer M, Desjardins P, Lee ML, Loo R, Moutanabbir O, Rastelli A, Reznicek A, Quitoriano N. ICSI-9, Montréal 2015: Silicon for now and beyond Thin Solid Films. 602: 1-2. DOI: 10.1016/J.Tsf.2016.01.041 |
0.362 |
|
| 2015 |
Mukherjee S, Givan U, Senz S, Bergeron A, Francoeur S, de la Mata M, Arbiol J, Sekiguchi T, Itoh KM, Isheim D, Seidman DN, Moutanabbir O. Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters. 15: 3885-93. PMID 25993500 DOI: 10.1021/Acs.Nanolett.5B00708 |
0.579 |
|
| 2015 |
Scheerschmidt K, Moutanabbir O. Tracking atomic processes throughout the formation of heteroepitaxial interfaces Crystal Research and Technology. 50: 490-498. DOI: 10.1002/Crat.201500061 |
0.438 |
|
| 2014 |
Blumtritt H, Isheim D, Senz S, Seidman DN, Moutanabbir O. Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology. 25: 435704. PMID 25299058 DOI: 10.1088/0957-4484/25/43/435704 |
0.407 |
|
| 2014 |
Lee SM, Pippel E, Moutanabbir O, Kim JH, Lee HJ, Knez M. In situ Raman spectroscopic study of Al-infiltrated spider dragline silk under tensile deformation. Acs Applied Materials & Interfaces. 6: 16827-34. PMID 25203848 DOI: 10.1021/Am5041797 |
0.328 |
|
| 2014 |
Xiong G, Moutanabbir O, Reiche M, Harder R, Robinson I. Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials (Deerfield Beach, Fla.). 26: 7747-63. PMID 24955950 DOI: 10.1002/Adma.201304511 |
0.363 |
|
| 2014 |
Balois MV, Hayazawa N, Tarun A, Kawata S, Reiche M, Moutanabbir O. Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters. 14: 3793-8. PMID 24867226 DOI: 10.1021/Nl500891F |
0.372 |
|
| 2014 |
Attiaoui A, Moutanabbir O. Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys Journal of Applied Physics. 116: 063712. DOI: 10.1063/1.4889926 |
0.372 |
|
| 2014 |
Chen P, Zhang JJ, Feser JP, Pezzoli F, Moutanabbir O, Cecchi S, Isella G, Gemming T, Baunack S, Chen G, Schmidt OG, Rastelli A. Thermal transport through short-period SiGe nanodot superlattices Journal of Applied Physics. 115. DOI: 10.1063/1.4863115 |
0.394 |
|
| 2014 |
Dadwal U, Kumar P, Moutanabbir O, Reiche M, Singh R. Effect of implantation temperature on the H-induced microstructural damage in AlN Journal of Alloys and Compounds. 588: 300-304. DOI: 10.1016/J.Jallcom.2013.10.227 |
0.343 |
|
| 2013 |
Moutanabbir O, Isheim D, Blumtritt H, Senz S, Pippel E, Seidman DN. Colossal injection of catalyst atoms into silicon nanowires. Nature. 496: 78-82. PMID 23552946 DOI: 10.1038/Nature11999 |
0.412 |
|
| 2013 |
Balois MV, Hayazawa N, Tarun A, Moutanabbir O, Kawata S. Precise and stable polarization control in a tightly focusing system for accurate characterization of strained Silicon nanostructures The Japan Society of Applied Physics. DOI: 10.1364/Jsap.2013.19A_D5_9 |
0.418 |
|
| 2013 |
Tarun A, Hayazawa N, Balois MV, Kawata S, Reiche M, Moutanabbir O. Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study New Journal of Physics. 15: 53042. DOI: 10.1088/1367-2630/15/5/053042 |
0.413 |
|
| 2013 |
Fournier-Lupien JH, Mukherjee S, Wirths S, Pippel E, Hayazawa N, Mussler G, Hartmann JM, Desjardins P, Buca D, Moutanabbir O. Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys Applied Physics Letters. 103. DOI: 10.1063/1.4855436 |
0.41 |
|
| 2013 |
Essig S, Moutanabbir O, Wekkeli A, Nahme H, Oliva E, Bett AW, Dimroth F. Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity Journal of Applied Physics. 113: 203512. DOI: 10.1063/1.4807905 |
0.385 |
|
| 2012 |
Hähnel A, Reiche M, Moutanabbir O, Blumtritt H, Geisler H, Höntschel J, Engelmann HJ. Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 18: 229-40. PMID 22258726 DOI: 10.1017/S1431927611012657 |
0.383 |
|
| 2012 |
Qin Y, Vogelgesang R, Eßlinger M, Sigle W, Van Aken P, Moutanabbir O, Knez M. Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates Advanced Functional Materials. 22: 5157-5165. DOI: 10.1002/Adfm.201201791 |
0.304 |
|
| 2011 |
Tarun A, Hayazawa N, Ishitobi H, Kawata S, Reiche M, Moutanabbir O. Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters. 11: 4780-8. PMID 21967475 DOI: 10.1021/Nl202599Q |
0.426 |
|
| 2011 |
Qin Y, Pan A, Liu L, Moutanabbir O, Yang RB, Knez M. Atomic layer deposition assisted template approach for electrochemical synthesis of Au crescent-shaped half-nanotubes. Acs Nano. 5: 788-94. PMID 21210698 DOI: 10.1021/Nn102879S |
0.396 |
|
| 2011 |
Moutanabbir O, Senz S, Scholz R, Alexe M, Kim Y, Pippel E, Wang Y, Wiethoff C, Nabbefeld T, Meyer zu Heringdorf F, Horn-von Hoegen M. Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature. Acs Nano. 5: 1313-20. PMID 21210666 DOI: 10.1021/Nn1030274 |
0.373 |
|
| 2011 |
Moutanabbir O, Reiche M, Zakharov N, Naumann F, Petzold M. Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer. Nanotechnology. 22: 045701. PMID 21157010 DOI: 10.1088/0957-4484/22/4/045701 |
0.522 |
|
| 2011 |
Tarun A, Hayazawa N, Moutanabbir O, Kawata S. Probing Transverse-Optical Phonons in Strained Si Nanowire: Strain Profiles and Nanomechanical properties The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.M-9-1 |
0.409 |
|
| 2011 |
Elsayed M, Krause-Rehberg R, Moutanabbir O, Anwand W, Richter S, Hagendorf C. Cu diffusion-induced vacancy-like defects in freestanding GaN New Journal of Physics. 13: 013029. DOI: 10.1088/1367-2630/13/1/013029 |
0.328 |
|
| 2011 |
Xiong G, Moutanabbir O, Huang X, Paknejad SA, Shi X, Harder R, Reiche M, Robinson IK. Elastic relaxation in an ultrathin strained silicon-on-insulator structure Applied Physics Letters. 99: 114103. DOI: 10.1063/1.3637634 |
0.42 |
|
| 2011 |
Moutanabbir O, Isheim D, Seidman DN, Kawamura Y, Itoh KM. Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers Applied Physics Letters. 98: 013111. DOI: 10.1063/1.3531816 |
0.592 |
|
| 2011 |
Hähnel A, Reiche M, Moutanabbir O, Blumtritt H, Geisler H, Hoentschel J, Engelmann H. Nano-beam electron diffraction evaluation of strain behaviour in nano-scale patterned strained silicon-on-insulator Physica Status Solidi (C). 8: 1319-1324. DOI: 10.1002/Pssc.201084007 |
0.394 |
|
| 2011 |
Reiche M, Moutanabbir O, Hoentschel J, Hähnel A, Flachowsky S, Gösele U, Horstmann M. Strained Silicon Nanodevices Mechanical Stress On the Nanoscale: Simulation, Material Systems and Characterization Techniques. 131-150. DOI: 10.1002/9783527639540.ch6 |
0.546 |
|
| 2010 |
Moutanabbir O, Miyamoto S, Haller EE, Itoh KM. Transport of deposited atoms throughout strain-mediated self-assembly. Physical Review Letters. 105: 026101. PMID 20867717 DOI: 10.1103/Physrevlett.105.026101 |
0.663 |
|
| 2010 |
Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The transition between conformal atomic layer epitaxy and nanowire growth. Journal of the American Chemical Society. 132: 7592-4. PMID 20469861 DOI: 10.1021/Ja102590V |
0.704 |
|
| 2010 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Gösele U, Motohashi M, Tarun A, Hayazawa N, Kawata S. Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide. Nanotechnology. 21: 134013. PMID 20208119 DOI: 10.1088/0957-4484/21/13/134013 |
0.642 |
|
| 2010 |
Moutanabbir O, Senz S, Alexe M, Kim Y, Scholz R, Blumtritt H, Wiethoff C, Nabbefeld T, Heringdorf FJMz, Hoegen MH, Isheim D, Seidman DN. The Role of Aluminum Catalyst Atoms in Shaping the Structural and Electrical Properties of Epitaxial Silicon Nanowires The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.H-3-4 |
0.307 |
|
| 2010 |
Moutanabbir O, Gösele U. Heterogeneous integration of compound semiconductors Annual Review of Materials Research. 40: 469-500. DOI: 10.1146/Annurev-Matsci-070909-104448 |
0.585 |
|
| 2010 |
Miyamoto S, Moutanabbir O, Ishikawa T, Eto M, Haller EE, Sawano K, Shiraki Y, Itoh KM. Excitonic Aharonov-Bohm effect in isotopically pure 70Ge/Si self-assembled type-II quantum dots Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.073306 |
0.593 |
|
| 2010 |
Moutanabbir O, Scholz R, Gösele U, Guittoum A, Jungmann M, Butterling M, Krause-Rehberg R, Anwand W, Egger W, Sperr P. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115205 |
0.561 |
|
| 2010 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Gösele U, Motohashi M, Tarun A, Hayazawa N, Kawata S. Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide Nanotechnology. 21. DOI: 10.1088/0957-4484/21/13/134013 |
0.576 |
|
| 2010 |
Moutanabbir O, Reiche M, Hähnel A, Oehme M, Kasper E. Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator Applied Physics Letters. 97: 053105. DOI: 10.1063/1.3475399 |
0.439 |
|
| 2010 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Motohashi M, Tarun A, Hayazawa N, Kawata S. UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure Applied Physics Letters. 96. DOI: 10.1063/1.3449135 |
0.412 |
|
| 2010 |
Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The transition between conformal atomic layer epitaxy and nanowire growth Journal of the American Chemical Society. 132: 7592-7594. DOI: 10.1021/ja102590v |
0.691 |
|
| 2010 |
Singh R, Christiansen SH, Moutanabbir O, Gösele U. The phenomenology of ion implantation-induced blistering and thin-layer splitting in compound semiconductors Journal of Electronic Materials. 39: 2177-2189. DOI: 10.1007/S11664-010-1334-X |
0.599 |
|
| 2010 |
Moutanabbir O, Gösele U. Bulk GaN ion cleaving Journal of Electronic Materials. 39: 482-488. DOI: 10.1007/S11664-010-1100-0 |
0.588 |
|
| 2010 |
Singh R, Dadwal U, Scholz R, Moutanabbir O, Christiansen S, Gösele U. Study of implantation-induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 44-47. DOI: 10.1002/Pssc.200982630 |
0.582 |
|
| 2009 |
Reiche M, Moutanabbir O, Hoentschel J, Gösele U, Flachowsky S, Horstmann M. Strained silicon devices Solid State Phenomena. 156: 61-68. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.61 |
0.584 |
|
| 2009 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Naumann F, Petzold M, Gösele U. Probing the strain states in nanopatterned strained SOI Ecs Transactions. 25: 187-194. DOI: 10.1149/1.3204406 |
0.494 |
|
| 2009 |
Moutanabbir O, Senz S, Scholz R, Christiansen S, Reiche M, Avramescu A, Strauss U, Gösele U. Stress adjustment and bonding of H-implanted 2 in. Freestanding GaN wafer: The concept of double-sided splitting Electrochemical and Solid-State Letters. 12: H105-H108. DOI: 10.1149/1.3066081 |
0.569 |
|
| 2009 |
Moutanabbir O, Scholz R, Gösele U, Terreault B. Facile synthesis of highly stable a-Si by ion implantation of low-keV H isotopes Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.233202 |
0.619 |
|
| 2009 |
Miyamoto S, Moutanabbir O, Haller EE, Itoh KM. Spatial correlation of self-assembled isotopically pure Ge/Si(001) nanoislands Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.165415 |
0.676 |
|
| 2009 |
Moutanabbir O, Reiche M, Erfurth W, Naumann F, Petzold M, Gösele U. The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator Applied Physics Letters. 94. DOI: 10.1063/1.3157134 |
0.612 |
|
| 2009 |
Moutanabbir O, Chabal YJ, Chicoine M, Christiansen S, Krause-Rehberg R, Schiettekatte F, Scholz R, Seitz O, Senz S, Süßkraut F, Gösele U. Mechanisms of ion-induced GaN thin layer splitting Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 1264-1268. DOI: 10.1016/J.Nimb.2009.01.028 |
0.583 |
|
| 2009 |
Moutanabbir O, Senz S, Zhang Z, Gösele U. Synthesis of isotopically controlled metal-catalyzed silicon nanowires Nano Today. 4: 393-398. DOI: 10.1016/J.Nantod.2009.08.009 |
0.6 |
|
| 2009 |
Moutanabbir O, Terreault B, Giguère A. Amorphisation and sub-100-nm exfoliation of hydrogen-ion-implanted silicon Physica Status Solidi (C). 6: 1958-1963. DOI: 10.1002/Pssc.200881453 |
0.454 |
|
| 2008 |
Reiche M, Moutanabbir O, Himcinschi C, Christiansen S, Erfurth W, Gösele U, Mantl S, Buca D, Zhao QT, Loo R, Nguyen D, Muster F, Petzold M. Strained silicon on wafer level by wafer bonding: Materials processing, strain measurements and strain relaxation Ecs Transactions. 16: 311-320. DOI: 10.1149/1.2982883 |
0.539 |
|
| 2008 |
Moutanabbir O, Reiche M, Erfurth W, Scholz R, Gösele U. Strain relaxation in nanostructured ultra thin SSOI Proceedings - Ieee International Soi Conference. 71-72. DOI: 10.1109/SOI.2008.4656299 |
0.507 |
|
| 2008 |
Moutanabbir O, Scholz R, Senz S, Gösele U, Chicoine M, Schiettekatte F, Süßkraut F, Krause-Rehberg R. Microstructural evolution in H ion induced splitting of freestanding GaN Applied Physics Letters. 93. DOI: 10.1063/1.2955832 |
0.629 |
|
| 2008 |
Moutanabbir O, Miyamoto S, Sagara A, Oshikawa H, Itoh K. Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealing Thin Solid Films. 517: 391-394. DOI: 10.1016/J.Tsf.2008.08.105 |
0.593 |
|
| 2008 |
Simpson PJ, Knights AP, Chicoine M, Dudeck K, Moutanabbir O, Ruffell S, Schiettekatte F, Terreault B. Thermal evolution of defects produced by implantation of H, D and He in Silicon Applied Surface Science. 255: 63-67. DOI: 10.1016/J.Apsusc.2008.05.171 |
0.381 |
|
| 2008 |
Himcinschi C, Singh R, Moutanabbir O, Scholz R, Reiche M, Christiansen SH, Gösele U, Zahn DRT. Etching-back of uniaxially strained silicon on insulator investigated by spectroscopic ellipsometry Physica Status Solidi (a) Applications and Materials Science. 205: 841-844. DOI: 10.1002/Pssa.200777753 |
0.644 |
|
| 2007 |
Robinson JT, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes TO, Aballe L, Dubon OD. Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si. Nano Letters. 7: 2655-9. PMID 17672506 DOI: 10.1021/Nl071051Y |
0.387 |
|
| 2007 |
Moutanabbir O, Terreault B, Chicoine M, Schiettekatte F, Simpson PJ. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.075201 |
0.363 |
|
| 2007 |
Moutanabbir O, Miyamoto S, Fujimoto A, Itoh KM. Isotopically controlled self-assembled Ge/Si nanostructures Journal of Crystal Growth. 324-329. DOI: 10.1016/J.Jcrysgro.2006.11.178 |
0.604 |
|
| 2006 |
Moutanabbir O, Terreault B, Chicoine M, Simpson PJ, Zahel T, Hobler G. Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale Physica B: Condensed Matter. 376: 36-40. DOI: 10.1016/J.Physb.2005.12.011 |
0.386 |
|
| 2005 |
Desrosiers N, Giguère A, Moutanabbir O, Terreault B. Ion blistering of boron-doped silicon: The critical role of defect passivation Applied Physics Letters. 87: 231908. DOI: 10.1063/1.2139845 |
0.379 |
|
| 2005 |
Moutanabbir O, Terreault B. Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions Applied Physics Letters. 86: 051906. DOI: 10.1063/1.1861502 |
0.357 |
|
| 2005 |
Moutanabbir O, Terreault B, Chicoine M, Schiettekatte F. The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale Applied Physics A. 80: 1455-1462. DOI: 10.1007/S00339-004-3094-Z |
0.403 |
|
| 2004 |
Moutanabbir O, Terreault B. Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon Journal of Chemical Physics. 121: 7973-7986. PMID 15485260 DOI: 10.1063/1.1794571 |
0.404 |
|
| 2004 |
Moutanabbir O, Giguère A, Terreault B. Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon Applied Physics Letters. 84: 3286-3288. DOI: 10.1063/1.1723699 |
0.378 |
|
| 2003 |
Moutanabbir O, Terreault B, Shaffer E, Ross GG. Isotope and Dose Effects in Low-Energy H/D Blistering of Silicon: Narrow Operational Window for Ion-Cutting at < 100 nm Mrs Proceedings. 792. DOI: 10.1557/Proc-792-R9.12 |
0.389 |
|
| 2003 |
Moutanabbir O, Terreault B, Ross GG. Isotope and crystal orientation effects in low-energy H/D blistering of Si Applied Physics Letters. 82: 4675-4677. DOI: 10.1063/1.1580637 |
0.368 |
|
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