Jordan R. Lang, Ph.D. - Publications

Affiliations: 
2012 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering

14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Yaung KN, Vaisman M, Lang J, Lee ML. GaAsP solar cells on GaP/Si with low threading dislocation density Applied Physics Letters. 109. DOI: 10.1063/1.4959825  0.689
2015 Masuda T, Tomasulo S, Lang JR, Lee ML. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy Journal of Applied Physics. 117. DOI: 10.1063/1.4914046  0.782
2015 Vaisman M, Tomasulo S, Masuda T, Lang JR, Faucher J, Lee ML. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4908181  0.699
2014 Yaung KN, Tomasulo S, Lang JR, Faucher J, Lee ML. Defect selective etching of GaAsyP1-yphotovoltaic materials Journal of Crystal Growth. 404: 140-145. DOI: 10.1016/J.Jcrysgro.2014.07.005  0.655
2013 Lang JR, Faucher J, Tomasulo S, Nay Yaung K, Larry Lee M. Comparison of GaAsP solar cells on GaP and GaP/Si Applied Physics Letters. 103. DOI: 10.1063/1.4819456  0.789
2013 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, et al. Optimization of annealing process for improved InGaN solar cell performance Journal of Electronic Materials. 42: 3467-3470. DOI: 10.1007/S11664-013-2794-6  0.591
2012 Browne DA, Young EC, Lang JR, Hurni CA, Speck JS. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4727967  0.745
2012 Lang JR, Young NG, Farrell RM, Wu YR, Speck JS. Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4765068  0.431
2012 Hurni CA, Lang JR, Burke PG, Speck JS. Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4751108  0.757
2012 Lang JR, Speck JS. NH 3-rich growth of InGaN and InGaN/GaN superlattices by NH 3-based molecular beam epitaxy Journal of Crystal Growth. 346: 50-55. DOI: 10.1016/J.Jcrysgro.2012.02.036  0.538
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Lang JR, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Effect of doping and polarization on carrier collection in InGaN quantum well solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3595487  0.585
2011 Farrell RM, Neufeld CJ, Cruz SC, Lang JR, Iza M, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm Applied Physics Letters. 98. DOI: 10.1063/1.3591976  0.58
2011 Lang JR, Neufeld CJ, Hurni CA, Cruz SC, Matioli E, Mishra UK, Speck JS. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3 -based molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3575563  0.773
2010 Hurni CA, Bierwagen O, Lang JR, McSkimming BM, Gallinat CS, Young EC, Browne DA, Mishra UK, Speck JS. P-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents Applied Physics Letters. 97. DOI: 10.1063/1.3521388  0.771
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