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Ravi Shivaraman, Ph.D. - Publications

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Ahmadi E, Chalabi H, Kaun SW, Shivaraman R, Speck JS, Mishra UK. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4896967  0.566
2014 Yang T, Shivaraman R, Speck JS, Wu Y. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Journal of Applied Physics. 116: 113104. DOI: 10.1063/1.4896103  0.458
2014 Ahmadi E, Shivaraman R, Wu F, Wienecke S, Kaun SW, Keller S, Speck JS, Mishra UK. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104. DOI: 10.1063/1.4866435  0.579
2013 Shivaraman R, Kawaguchi Y, Tanaka S, Denbaars SP, Nakamura S, Speck JS. Comparative analysis of 202̄1 and 202̄1 ̄ semipolar GaN light emitting diodes using atom probe tomography Applied Physics Letters. 102. DOI: 10.1063/1.4812363  0.394
2013 Shivaraman R, Wu Y-, Choi S, Chung R, Speck J. Atom Probe Tomography of III-Nitrides Based Semiconducting Devices Microscopy and Microanalysis. 19: 956-957. DOI: 10.1017/S1431927613006776  0.46
2012 Wu Y, Shivaraman R, Wang K, Speck JS. Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Applied Physics Letters. 101: 83505. DOI: 10.1063/1.4747532  0.449
2012 Choi S, Wu F, Shivaraman R, Young EC, Speck JS. Publisher’s Note: “Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy” [Appl. Phys. Lett. 100, 232102 (2012)] Applied Physics Letters. 101: 49903. DOI: 10.1063/1.4740223  0.476
2012 Choi S, Wu F, Shivaraman R, Young EC, Speck JS. Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy Applied Physics Letters. 100: 232102. DOI: 10.1063/1.4725482  0.501
2011 Prosa TJ, Clifton PH, Zhong H, Tyagi A, Shivaraman R, DenBaars SP, Nakamura S, Speck JS. Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate” [Appl. Phys. Lett. 98, 191903 (2011)] Applied Physics Letters. 98: 239901. DOI: 10.1063/1.3598937  0.388
2011 Prosa TJ, Clifton PH, Zhong H, Tyagi A, Shivaraman R, DenBaars SP, Nakamura S, Speck JS. Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate Applied Physics Letters. 98: 191903. DOI: 10.1063/1.3589370  0.408
2011 Chung RB, Wu F, Shivaraman R, Keller S, Denbaars SP, Speck JS, Nakamura S. Growth study and impurity characterization of AlxIn 1-xN grown by metal organic chemical vapor deposition Journal of Crystal Growth. 324: 163-167. DOI: 10.1016/J.Jcrysgro.2011.04.025  0.454
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