Stephen W. Kaun, Ph.D. - Publications

Affiliations: 
2014 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering

30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Jiang R, Shen X, Fang J, Wang P, Zhang EX, Chen J, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle EC, Speck JS, Pantelides ST. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 18: 364-376. DOI: 10.1109/Tdmr.2018.2847338  0.527
2018 Oshima Y, Ahmadi E, Kaun S, Wu F, Speck JS. Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 33: 15013. DOI: 10.1088/1361-6641/Aa9C4D  0.523
2018 Kyle ECH, Kaun SW, Wu F, Bonef B, Speck JS. Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy” [J. Cryst. Growth 454 (2016) 164–172] Journal of Crystal Growth. 496: 80-80. DOI: 10.1016/J.Jcrysgro.2018.05.017  0.503
2017 Ahmadi E, Koksaldi OS, Kaun SW, Oshima Y, Short DB, Mishra UK, Speck JS. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 41102. DOI: 10.7567/Apex.10.041102  0.547
2017 Jiang R, Zhang EX, McCurdy MW, Chen J, Shen X, Wang P, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 218-225. DOI: 10.1109/Tns.2016.2626962  0.482
2016 Chen J, Puzyrev YS, Zhang EX, Fleetwood DM, Schrimpf RD, Arehart AR, Ringel SA, Kaun SW, Kyle ECH, Speck JS, Saunier P, Lee C, Pantelides ST. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 16: 282-289. DOI: 10.1109/Tdmr.2016.2581178  0.56
2016 Hogan JE, Kaun SW, Ahmadi E, Oshima Y, Speck JS. Chlorine-based dry etching of β-Ga2O3 Semiconductor Science and Technology. 31: 65006. DOI: 10.1088/0268-1242/31/6/065006  0.458
2016 Jiang R, Shen X, Chen J, Duan GX, Zhang EX, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 109. DOI: 10.1063/1.4958706  0.598
2016 Kyle ECH, Kaun SW, Wu F, Bonef B, Speck JS. High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 454: 164-172. DOI: 10.1016/J.Jcrysgro.2016.08.045  0.577
2015 Kaun SW, Wu F, Speck JS. β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 33: 41508. DOI: 10.1116/1.4922340  0.464
2015 Ahmadi E, Wu F, Li H, Kaun SW, Tahhan M, Hestroffer K, Keller S, Speck JS, Mishra UK. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8. DOI: 10.1088/0268-1242/30/5/055012  0.634
2015 Kaun SW, Mazumder B, Fireman MN, Kyle ECH, Mishra UK, Speck JS. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055010  0.578
2015 Kyle ECH, Kaun SW, Young EC, Speck JS. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN Applied Physics Letters. 106. DOI: 10.1063/1.4922216  0.503
2014 Sasikumar A, Arehart AR, Kaun SW, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Defects in GaN based transistors Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2042020  0.544
2014 Chen J, Zhang EX, Zhang CX, McCurdy MW, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS. RF performance of proton-irradiated AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 61: 2959-2964. DOI: 10.1109/Tns.2014.2362872  0.515
2014 Kaun SW, Ahmadi E, Mazumder B, Wu F, Kyle ECH, Burke PG, Mishra UK, Speck JS. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/4/045011  0.608
2014 Ahmadi E, Chalabi H, Kaun SW, Shivaraman R, Speck JS, Mishra UK. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4896967  0.687
2014 Kyle ECH, Kaun SW, Burke PG, Wu F, Wu YR, Speck JS. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Journal of Applied Physics. 115. DOI: 10.1063/1.4874735  0.62
2014 Ahmadi E, Shivaraman R, Wu F, Wienecke S, Kaun SW, Keller S, Speck JS, Mishra UK. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104. DOI: 10.1063/1.4866435  0.726
2013 Chen J, Puzyrev YS, Zhang CX, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Kaun SW, Kyle ECH, Speck JS. Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 60: 4080-4086. DOI: 10.1109/Tns.2013.2281771  0.532
2013 Kaun SW, Wong MH, Mishra UK, Speck JS. Molecular beam epitaxy for high-performance Ga-face GaN electron devices Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074001  0.601
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  0.574
2013 Mazumder B, Kaun SW, Lu J, Keller S, Mishra UK, Speck JS. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4798249  0.574
2013 Kaun SW, Wong MH, Lu J, Mishra UK, Speck JS. Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN Electronics Letters. 49: 903-905. DOI: 10.1049/El.2013.1723  0.59
2012 Kaun SW, Burke PG, Hoi Wong M, Kyle ECH, Mishra UK, Speck JS. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4773510  0.631
2012 Kaun SW, Wong MH, Mishra UK, Speck JS. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4730951  0.61
2012 Hodges C, Killat N, Kaun SW, Wong MH, Gao F, Palacios T, Mishra UK, Speck JS, Wolverson D, Kuball M. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers Applied Physics Letters. 100. DOI: 10.1063/1.3693427  0.551
2011 Kaun SW, Wong MH, Dasgupta S, Choi S, Chung R, Mishra UK, Speck JS. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Applied Physics Express. 4: 24101. DOI: 10.1143/Apex.4.024101  0.626
2011 Gao F, Lu B, Li L, Kaun S, Speck JS, Thompson CV, Palacios T. Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3665065  0.495
2011 Ťapajna M, Kaun SW, Wong MH, Gao F, Palacios T, Mishra UK, Speck JS, Kuball M. Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99: 223501. DOI: 10.1063/1.3663573  0.581
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