Phaedon Avouris, Ph.D. - Publications

Affiliations: 
1969-1974 Michigan State University, East Lansing, MI 
 1975-1977 AT&T Bell Laboratories 
 1978- IBM Thomas J. Watson Research Center, Yorktown Heights, NY, United States 
Website:
https://en.wikipedia.org/wiki/Phaedon_Avouris

154 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Rodrigo D, Low T, Farmer DB, Altug H, Avouris P. Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125407  0.72
2016 Farmer DB, Avouris P, Li Y, Heinz TF, Han SJ. Ultrasensitive Plasmonic Detection of Molecules with Graphene Acs Photonics. 3: 553-557. DOI: 10.1021/Acsphotonics.6B00143  0.72
2015 Engel M, Steiner M, Han SJ, Avouris P. Power Dissipation and Electrical Breakdown in Black Phosphorus. Nano Letters. PMID 26348293 DOI: 10.1021/Acs.Nanolett.5B02622  0.72
2015 Kumar A, Low T, Fung KH, Avouris P, Fang NX. Tunable Light-Matter Interaction and the Role of Hyperbolicity in Graphene-hBN System. Nano Letters. 15: 3172-80. PMID 25897983 DOI: 10.1021/Acs.Nanolett.5B01191  0.72
2015 Farmer DB, Rodrigo D, Low T, Avouris P. Plasmon-plasmon hybridization and bandwidth enhancement in nanostructured graphene. Nano Letters. 15: 2582-7. PMID 25749426 DOI: 10.1021/Acs.Nanolett.5B00148  0.72
2015 Engel M, Steiner M, Seo JW, Hersam MC, Avouris P. Hot spot dynamics in carbon nanotube array devices. Nano Letters. 15: 2127-31. PMID 25713977 DOI: 10.1021/Acs.Nanolett.5B00048  0.72
2015 Chaves A, Low T, Avouris P, Çaklr D, Peeters FM. Anisotropic exciton Stark shift in black phosphorus Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.155311  0.72
2014 Koppens FH, Mueller T, Avouris P, Ferrari AC, Vitiello MS, Polini M. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nature Nanotechnology. 9: 780-93. PMID 25286273 DOI: 10.1038/Nnano.2014.215  0.72
2014 Low T, Roldán R, Wang H, Xia F, Avouris P, Moreno LM, Guinea F. Plasmons and screening in monolayer and multilayer black phosphorus. Physical Review Letters. 113: 106802. PMID 25238376 DOI: 10.1103/Physrevlett.113.106802  0.72
2014 Freitag M, Low T, Martin-Moreno L, Zhu W, Guinea F, Avouris P. Substrate-sensitive mid-infrared photoresponse in graphene. Acs Nano. 8: 8350-6. PMID 25033317 DOI: 10.1021/Nn502822Z  0.72
2014 Yan H, Low T, Guinea F, Xia F, Avouris P. Tunable phonon-induced transparency in bilayer graphene nanoribbons. Nano Letters. 14: 4581-6. PMID 25019702 DOI: 10.1021/Nl501628X  0.72
2014 Low T, Guinea F, Yan H, Xia F, Avouris P. Novel midinfrared plasmonic properties of bilayer graphene. Physical Review Letters. 112: 116801. PMID 24702400 DOI: 10.1103/Physrevlett.112.116801  0.72
2014 Zhu W, Low T, Lee YH, Wang H, Farmer DB, Kong J, Xia F, Avouris P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nature Communications. 5: 3087. PMID 24435154 DOI: 10.1038/Ncomms4087  0.72
2014 Avouris P, Farmer DB, Freitag M, Li Y, Low T, Yan H, Wang H. Graphene plasmons: Properties and applications Proceedings of Spie - the International Society For Optical Engineering. 9162. DOI: 10.1117/12.2060587  0.72
2014 Avouris P, Freitag M. Graphene photonics, plasmonics, and optoelectronics Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2272315  0.72
2014 Low T, Engel M, Steiner M, Avouris P. Origin of photoresponse in black phosphorus phototransistors Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.081408  0.72
2013 Freitag M, Low T, Zhu W, Yan H, Xia F, Avouris P. Photocurrent in graphene harnessed by tunable intrinsic plasmons. Nature Communications. 4: 1951. PMID 23727714 DOI: 10.1038/Ncomms2951  0.72
2013 Freitag M, Low T, Avouris P. Increased responsivity of suspended graphene photodetectors. Nano Letters. 13: 1644-8. PMID 23452264 DOI: 10.1021/Nl4001037  0.72
2013 Scharf B, Perebeinos V, Fabian J, Avouris P. Effects of optical and surface polar phonons on the optical conductivity of doped graphene Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.035414  0.72
2013 Zhu W, Low T, Farmer DB, Jenkins K, Ek B, Avouris P. Effect of dual gate control on the alternating current performance of graphene radio frequency device Journal of Applied Physics. 114. DOI: 10.1063/1.4816443  0.72
2013 Zhu W, Farmer DB, Jenkins KA, Ek B, Oida S, Li X, Bucchignano J, Dawes S, Duch EA, Avouris P. Graphene radio frequency devices on flexible substrate Applied Physics Letters. 102. DOI: 10.1063/1.4810008  0.72
2013 Yan H, Low T, Zhu W, Wu Y, Freitag M, Li X, Guinea F, Avouris P, Xia F. Damping pathways of mid-infrared plasmons in graphene nanostructures Nature Photonics. 7: 394-399. DOI: 10.1038/Nphoton.2013.57  0.72
2013 Freitag M, Low T, Xia F, Avouris P. Photoconductivity of biased graphene Nature Photonics. 7: 53-59. DOI: 10.1038/Nphoton.2012.314  0.72
2012 Engel M, Steiner M, Sundaram RS, Krupke R, Green AA, Hersam MC, Avouris P. Spatially resolved electrostatic potential and photocurrent generation in carbon nanotube array devices. Acs Nano. 6: 7303-10. PMID 22769018 DOI: 10.1021/Nn302416E  0.72
2012 Zhu W, Low T, Perebeinos V, Bol AA, Zhu Y, Yan H, Tersoff J, Avouris P. Structure and electronic transport in graphene wrinkles. Nano Letters. 12: 3431-6. PMID 22646513 DOI: 10.1021/Nl300563H  0.72
2012 Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM. State-of-the-art graphene high-frequency electronics. Nano Letters. 12: 3062-7. PMID 22563820 DOI: 10.1021/Nl300904K  0.72
2012 Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/Nn205106Z  0.72
2012 Wu Y, Perebeinos V, Lin YM, Low T, Xia F, Avouris P. Quantum behavior of graphene transistors near the scaling limit. Nano Letters. 12: 1417-23. PMID 22316333 DOI: 10.1021/Nl204088B  0.72
2012 Avouris P, Xia F. Graphene applications in electronics and photonics Mrs Bulletin. 37: 1225-1234. DOI: 10.1557/Mrs.2012.206  0.72
2012 Low T, Perebeinos V, Kim R, Freitag M, Avouris P. Cooling of photoexcited carriers in graphene by internal and substrate phonons Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.045413  0.72
2012 Steiner M, Engel M, Lin YM, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo JWT, Green AA, Hersam MC, Krupke R, Avouris P. High-frequency performance of scaled carbon nanotube array field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4742325  0.72
2011 Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/Science.1204428  0.72
2011 Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 472: 74-8. PMID 21475197 DOI: 10.1038/Nature09979  0.72
2011 Xia F, Perebeinos V, Lin YM, Wu Y, Avouris P. The origins and limits of metal-graphene junction resistance. Nature Nanotechnology. 6: 179-84. PMID 21297624 DOI: 10.1038/Nnano.2011.6  0.72
2011 Koswatta SO, Valdes-Garcia A, Steiner MB, Lin YM, Avouris P. Ultimate RF performance potential of carbon electronics Ieee Transactions On Microwave Theory and Techniques. 59: 2739-2750. DOI: 10.1109/Tmtt.2011.2150241  0.72
2011 Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/Led.2011.2162934  0.72
2011 Farmer DB, Perebeinos V, Lin YM, Dimitrakopoulos C, Avouris P. Charge trapping and scattering in epitaxial graphene Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205417  0.72
2011 Kim R, Perebeinos V, Avouris P. Relaxation of optically excited carriers in graphene Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075449  0.72
2010 Kinoshita M, Steiner M, Engel M, Small JP, Green AA, Hersam MC, Krupke R, Mendez EE, Avouris P. The polarized carbon nanotube thin film LED. Optics Express. 18: 25738-45. PMID 21164919 DOI: 10.1364/Oe.18.025738  0.72
2010 Chiu HY, Perebeinos V, Lin YM, Avouris P. Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering. Nano Letters. 10: 4634-9. PMID 20886859 DOI: 10.1021/Nl102756R  0.72
2010 Zhu W, Neumayer D, Perebeinos V, Avouris P. Silicon nitride gate dielectrics and band gap engineering in graphene layers. Nano Letters. 10: 3572-6. PMID 20715804 DOI: 10.1021/Nl101832Y  0.72
2010 Freitag M, Chiu HY, Steiner M, Perebeinos V, Avouris P. Thermal infrared emission from biased graphene. Nature Nanotechnology. 5: 497-501. PMID 20453854 DOI: 10.1038/Nnano.2010.90  0.72
2010 Mueller T, Kinoshita M, Steiner M, Perebeinos V, Bol AA, Farmer DB, Avouris P. Efficient narrow-band light emission from a single carbon nanotube p-n diode. Nature Nanotechnology. 5: 27-31. PMID 19915571 DOI: 10.1038/Nnano.2009.319  0.72
2010 Avouris P, Martel R. Progress in Carbon Nanotube Electronics and Photonics Mrs Bulletin. 35: 306-313. DOI: 10.1557/Mrs2010.553  0.4
2010 Dimitrakopoulos C, Lin YM, Grill A, Farmer DB, Freitag M, Sun Y, Han SJ, Chen Z, Jenkins KA, Zhu Y, Liu Z, McArdle TJ, Ott JA, Wisnieff R, Avouris P. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 985-992. DOI: 10.1116/1.3480961  0.72
2010 Lin YM, Chiu HY, Jenkins KA, Farmer DB, Avouris P, Valdes-Garcia A. Dual-gate graphene FETs with fT of 50 GHz Ieee Electron Device Letters. 31: 68-70. DOI: 10.1109/Led.2009.2034876  0.72
2010 Perebeinos V, Avouris P. Inelastic scattering and current saturation in graphene Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.195442  0.72
2010 Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671  0.72
2009 Freitag M, Steiner M, Naumov A, Small JP, Bol AA, Perebeinos V, Avouris P. Carbon nanotube photo- and electroluminescence in longitudinal electric fields. Acs Nano. 3: 3744-8. PMID 19928934 DOI: 10.1021/Nn900962F  0.72
2009 Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. Nano Letters. 9: 4474-8. PMID 19883119 DOI: 10.1021/Nl902788U  0.72
2009 Steiner M, Freitag M, Perebeinos V, Tsang JC, Small JP, Kinoshita M, Yuan D, Liu J, Avouris P. Phonon populations and electrical power dissipation in carbon nanotube transistors. Nature Nanotechnology. 4: 320-4. PMID 19421219 DOI: 10.1038/Nnano.2009.22  0.72
2009 Rotkin SV, Perebeinos V, Petrov AG, Avouris P. An essential mechanism of heat dissipation in carbon nanotube electronics. Nano Letters. 9: 1850-5. PMID 19334687 DOI: 10.1021/Nl803835Z  0.72
2009 Freitag M, Steiner M, Martin Y, Perebeinos V, Chen Z, Tsang JC, Avouris P. Energy dissipation in graphene field-effect transistors. Nano Letters. 9: 1883-8. PMID 19331421 DOI: 10.1021/Nl803883H  0.72
2009 Xia F, Mueller T, Golizadeh-Mojarad R, Freitag M, Lin YM, Tsang J, Perebeinos V, Avouris P. Photocurrent imaging and efficient photon detection in a graphene transistor. Nano Letters. 9: 1039-44. PMID 19203207 DOI: 10.1021/Nl8033812  0.72
2009 Farmer DB, Golizadeh-Mojarad R, Perebeinos V, Lin YM, Tulevski GS, Tsang JC, Avouris P. Chemical doping and electron-hole conduction asymmetry in graphene devices. Nano Letters. 9: 388-92. PMID 19102701 DOI: 10.1021/Nl803214A  0.72
2009 Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P. Operation of graphene transistors at gigahertz frequencies. Nano Letters. 9: 422-6. PMID 19099364 DOI: 10.1021/Nl803316H  0.72
2009 Perebeinos V, Rotkin SV, Petrov AG, Avouris P. The effects of substrate phonon mode scattering on transport in carbon nanotubes. Nano Letters. 9: 312-6. PMID 19055370 DOI: 10.1021/Nl8030086  0.72
2009 Zhu W, Perebeinos V, Freitag M, Avouris P. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.235402  0.72
2009 Steiner M, Freitag M, Tsang JC, Perebeinos V, Bol AA, Failla AV, Avouris P. How does the substrate affect the Raman and excited state spectra of a carbon nanotube? Applied Physics a: Materials Science and Processing. 96: 271-282. DOI: 10.1007/S00339-009-5211-5  0.72
2008 Engel M, Small JP, Steiner M, Freitag M, Green AA, Hersam MC, Avouris P. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. Acs Nano. 2: 2445-52. PMID 19206278 DOI: 10.1021/Nn800708W  0.72
2008 Perebeinos V, Avouris P. Phonon and electronic nonradiative decay mechanisms of excitons in carbon nanotubes. Physical Review Letters. 101: 057401. PMID 18764429 DOI: 10.1103/Physrevlett.101.057401  0.72
2008 Koswatta SO, Perebeinos V, Lundstrom MS, Avouris P. Computational study of exciton generation in suspended carbon nanotube transistors. Nano Letters. 8: 1596-601. PMID 18457455 DOI: 10.1021/Nl0801226  0.72
2008 Hertel T, Perebeinos V, Crochet J, Arnold K, Kappes M, Avouris P. Intersubband decay of 1-D exciton resonances in carbon nanotubes. Nano Letters. 8: 87-91. PMID 18069868 DOI: 10.1021/Nl0720915  0.72
2008 Chen Z, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J. Externally assembled gate-all-around carbon nanotube field-effect transistor Ieee Electron Device Letters. 29: 183-185. DOI: 10.1109/Led.2007.914069  0.72
2008 Lin YM, Perebeinos V, Chen Z, Avouris P. Electrical observation of subband formation in graphene nanoribbons Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.161409  0.72
2008 Avouris P, Freitag M, Perebeinos V. Carbon-nanotube photonics and optoelectronics Nature Photonics. 2: 341-350. DOI: 10.1038/Nphoton.2008.94  0.72
2007 Avouris P, Chen Z, Perebeinos V. Carbon-based electronics. Nature Nanotechnology. 2: 605-15. PMID 18654384 DOI: 10.1038/Nnano.2007.300  0.72
2007 Tulevski GS, Hannon J, Afzali A, Chen Z, Avouris P, Kagan CR. Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays. Journal of the American Chemical Society. 129: 11964-8. PMID 17824611 DOI: 10.1021/Ja073647T  0.72
2007 Nguyen TQ, Martel R, Bushey M, Avouris P, Carlsen A, Nuckolls C, Brus L. Self-assembly of 1-D organic semiconductor nanostructures. Physical Chemistry Chemical Physics : Pccp. 9: 1515-32. PMID 17429546 DOI: 10.1039/B609956D  0.72
2007 Perebeinos V, Avouris P. Exciton ionization, Franz-Keldysh, and Stark effects in carbon nanotubes. Nano Letters. 7: 609-13. PMID 17261074 DOI: 10.1021/Nl0625022  0.72
2007 Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. 1/f noise in carbon nanotube Devices - On the impact of contacts and device geometry Ieee Transactions On Nanotechnology. 6: 368-373. DOI: 10.1109/Tnano.2007.892052  0.72
2007 Lin YM, Appenzeller J, Chen Z, Avouris P. Electrical transport and 1 / f noise in semiconducting carbon nanotubes Physica E: Low-Dimensional Systems and Nanostructures. 37: 72-77. DOI: 10.1016/J.Physe.2006.07.008  0.72
2006 Freitag M, Tsang JC, Kirtley J, Carlsen A, Chen J, Troeman A, Hilgenkamp H, Avouris P. Electrically excited, localized infrared emission from single carbon nanotubes. Nano Letters. 6: 1425-33. PMID 16834423 DOI: 10.1021/Nl060462W  0.72
2006 Lin YM, Appenzeller J, Knoch J, Chen Z, Avouris P. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes. Nano Letters. 6: 930-6. PMID 16683828 DOI: 10.1021/Nl052528D  0.72
2006 Chen Z, Appenzeller J, Lin YM, Sippel-Oakley J, Rinzler AG, Tang J, Wind SJ, Solomon PM, Avouris P. An integrated logic circuit assembled on a single carbon nanotube. Science (New York, N.Y.). 311: 1735. PMID 16556834 DOI: 10.1126/Science.1122797  0.72
2006 Perebeinos V, Tersoff J, Avouris P. Mobility in semiconducting carbon nanotubes at finite carrier density. Nano Letters. 6: 205-8. PMID 16464035 DOI: 10.1021/Nl052044H  0.72
2006 Perebeinos V, Avouris P. Impact excitation by hot carriers in carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.121410  0.72
2005 Perebeinos V, Tersoff J, Avouris P. Radiative lifetime of excitons in carbon nanotubes. Nano Letters. 5: 2495-9. PMID 16351202 DOI: 10.1021/Nl051828S  0.72
2005 Chen J, Perebeinos V, Freitag M, Tsang J, Fu Q, Liu J, Avouris P. Bright infrared emission from electrically induced excitons in carbon nanotubes. Science (New York, N.Y.). 310: 1171-4. PMID 16293757 DOI: 10.1126/Science.1119177  0.72
2005 Chen Z, Appenzeller J, Knoch J, Lin YM, Avouris P. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. Nano Letters. 5: 1497-502. PMID 16178264 DOI: 10.1021/Nl0508624  0.72
2005 Qiu X, Freitag M, Perebeinos V, Avouris P. Photoconductivity spectra of single-carbon nanotubes: implications on the nature of their excited States. Nano Letters. 5: 749-52. PMID 15826121 DOI: 10.1021/Nl050227Y  0.72
2005 Perebeinos V, Tersoff J, Avouris P. Electron-phonon interaction and transport in semiconducting carbon nanotubes. Physical Review Letters. 94: 086802. PMID 15783915 DOI: 10.1103/Physrevlett.94.086802  0.72
2005 Perebeinos V, Tersoff J, Avouris P. Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes. Physical Review Letters. 94: 027402. PMID 15698227 DOI: 10.1103/Physrevlett.94.027402  0.72
2005 Lin YM, Appenzeller J, Knoch J, Avouris P. High-performance carbon nanotube field-effect transistor with tunable polarities Ieee Transactions On Nanotechnology. 4: 481-489. DOI: 10.1109/Tnano.2005.851427  0.72
2005 Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design Ieee Transactions On Electron Devices. 52: 2568-2576. DOI: 10.1109/Ted.2005.859654  0.72
2005 Lin YM, Appenzeller J, Chen Z, Chen ZG, Cheng HM, Avouris P. High-performance dual-gate carbon nanotube FETs with 40-nm gate length Ieee Electron Device Letters. 26: 823-825. DOI: 10.1109/Led.2005.857704  0.72
2004 Perebeinos V, Tersoff J, Avouris P. Scaling of excitons in carbon nanotubes. Physical Review Letters. 92: 257402. PMID 15245063 DOI: 10.1103/Physrevlett.92.257402  0.72
2004 Nguyen TQ, Martel R, Avouris P, Bushey ML, Brus L, Nuckolls C. Molecular interactions in one-dimensional organic nanostructures. Journal of the American Chemical Society. 126: 5234-42. PMID 15099108 DOI: 10.1021/Ja031600B  0.72
2004 Lin YM, Appenzeller J, Avouris P. Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering Nano Letters. 4: 947-950. DOI: 10.1021/Nl049745J  0.72
2004 Freitag M, Perebeinos V, Chen J, Stein A, Tsang JC, Misewich JA, Martel R, Avouris P. Hot carrier electroluminescence from a single carbon nanotube Nano Letters. 4: 1063-1066. DOI: 10.1021/Nl049607U  0.72
2003 Misewich JA, Martel R, Avouris P, Tsang JC, Heinze S, Tersoff J. Electrically induced optical emission from a carbon nanotube FET Science. 300: 783-786. PMID 12730598 DOI: 10.1126/Science.1081294  0.4
2003 Radosavljević M, Appenzeller J, Derycke V, Martel R, Avouris P, Loiseau A, Cochon JL, Pigache D. Electrical properties and transport in boron nitride nanotubes Applied Physics Letters. 82: 4131-4133. DOI: 10.1063/1.1581370  0.4
2003 Freitag M, Martin Y, Misewich JA, Martel R, Avouris P. Photoconductivity of single carbon nanotubes Nano Letters. 3: 1067-1071. DOI: 10.1021/Nl034313E  0.4
2002 Appenzeller J, Knoch J, Derycke V, Martel R, Wind S, Avouris P. Field-modulated carrier transport in carbon nanotube transistors. Physical Review Letters. 89: 126801. PMID 12225112 DOI: 10.1103/Physrevlett.89.126801  0.4
2002 Wind SJ, Martel R, Avouris P. Localized and directed lateral growth of carbon nanotubes from a porous template Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2745-2748. DOI: 10.1116/1.1523019  0.4
2002 Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2798-2801. DOI: 10.1116/1.1521731  0.4
2002 Appenzeller J, Martel R, Avouris P, Knoch J, Scholvin J, Del Alamo JA, Rice P, Solomon P. Sub-40 nm SOI V-groove n-MOSFETs Ieee Electron Device Letters. 23: 100-102. DOI: 10.1109/55.981319  0.4
2002 Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P. Carbon nanotubes as Schottky barrier transistors Physical Review Letters. 89: 1068011-1068014. DOI: 10.1103/Physrevlett.89.106801  0.4
2002 Avouris P, Martel R, Heinze S, Radosavljevic M, Wind S, Derycke V, Appenzeller J, Terso J. The role of Schottky barriers on the behavior of carbon nanotube field‐effect transistors Structural and Electronic Properties of Molecular Nanostructures. Xvi International Winterschool On Electronic Properties of Novel Materials. 633: 508-512. DOI: 10.1063/1.1514172  0.4
2002 Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes Applied Physics Letters. 80: 3817-3819. DOI: 10.1063/1.1480877  0.4
2002 Derycke V, Martel R, Appenzeller J, Avouris P. Controlling doping and carrier injection in carbon nanotube transistors Applied Physics Letters. 80: 2773-2775. DOI: 10.1063/1.1467702  0.4
2002 Derycke V, Martel R, Radosavljević M, Ross aFM, Avouris P. Catalyst-Free Growth of Ordered Single-Walled Carbon Nanotube Networks Nano Letters. 2: 1043-1046. DOI: 10.1021/Nl0256309  0.4
2002 Steckel JA, Jordan KD, Avouris P. Oxygen atom reactions with circumtrindene and related molecules: Analogues for the oxidation of nanotube caps Journal of Physical Chemistry A. 106: 2572-2579. DOI: 10.1021/Jp014421U  0.72
2002 Avouris P, Martel R, Derycke V, Appenzeller J. Carbon nanotube transistors and logic circuits Physica B: Condensed Matter. 323: 6-14. DOI: 10.1016/S0921-4526(02)00870-0  0.4
2002 Appenzeller J, Martel R, Derycke V, Radosavljeví M, Wind S, Neumayer D, Avouris P. Carbon nanotubes as potential building blocks for future nanoelectronics Microelectronic Engineering. 64: 391-397. DOI: 10.1016/S0167-9317(02)00813-4  0.4
2001 Collins PG, Hersam M, Arnold M, Martel R, Avouris P. Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes Physical Review Letters. 86: 3128-3131. PMID 11290124 DOI: 10.1103/Physrevlett.86.3128  0.4
2001 Martel R, Derycke V, Lavoie C, Appenzeller J, Chan KK, Tersoff J, Avouris P. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes Physical Review Letters. 87. DOI: 10.1103/Physrevlett.87.256805  0.4
2001 Appenzeller J, Martel R, Avouris P, Stahl H, Hunger UT, Lengeler B. Phase-coherent transport in ropes of single-wall carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 64: 1214041-1214044. DOI: 10.1103/Physrevb.64.121404  0.4
2001 Liu K, Avouris P, Martel R, Hsu WK. Electrical transport in doped multiwalled carbon nanotubes Physical Review B. 63: 161404. DOI: 10.1103/Physrevb.63.161404  0.4
2001 Appenzeller J, Martel R, Avouris P, Stahl H, Lengeler B. Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes Applied Physics Letters. 78: 3313-3315. DOI: 10.1063/1.1373413  0.4
2001 Derycke V, Martel R, Appenzeller J, Avouris P. Carbon Nanotube Inter- and Intramolecular Logic Gates Nano Letters. 1: 453-456. DOI: 10.1021/Nl015606F  0.4
2001 Sorescu DC, Jordan KD, Avouris P. Theoretical study of oxygen adsorption on graphite and the (8,0) single-walled carbon nanotube Journal of Physical Chemistry B. 105: 11227-11232. DOI: 10.1021/Jp0122979  0.72
2001 Stahl H, Appenzeller J, Lengeler B, Martel R, Avouris P. Investigation of the inter-tube coupling in single-wall nanotube ropes Materials Science and Engineering C. 15: 291-294. DOI: 10.1016/S0928-4931(01)00229-6  0.4
2001 Appenzeller J, Martel R, Solomon P, Chan K, Avouris P, Knoch J, Benedict J, Tanner M, Thomas S, Wang KL, Del Alamo JA. A 10 nm MOSFET concept Microelectronic Engineering. 56: 213-219. DOI: 10.1016/S0167-9317(00)00530-X  0.4
2000 Shea HR, Martel R, Avouris P. Electrical transport in rings of single-wall nanotubes: one-dimensional localization Physical Review Letters. 84: 4441-4444. PMID 10990706 DOI: 10.1103/Physrevlett.84.4441  0.4
2000 Landman U, Barnett RN, Scherbakov AG, Avouris P. Metal-semiconductor nanocontacts: silicon nanowires Physical Review Letters. 85: 1958-61. PMID 10970657 DOI: 10.1103/Physrevlett.85.1958  0.72
2000 Stahl H, Appenzeller J, Martel R, Avouris P, Lengeler B. Intertube coupling in ropes of single-wall carbon nanotubes Physical Review Letters. 85: 5186-5189. DOI: 10.1103/Physrevlett.85.5186  0.4
2000 Appenzeller J, Martel R, Solomon P, Chan K, Avouris P, Knoch J, Benedict J, Tanner M, Thomas S, Wang KL, Del Alamo JA. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 77: 298-300. DOI: 10.1063/1.126956  0.4
1999 Martel R, Schmidt T, Sandstrom RL, Avouris P. Current-induced nanochemistry: Local oxidation of thin metal films Journal of Vacuum Science and Technology. 17: 1451-1456. DOI: 10.1116/1.581835  0.4
1999 Rochefort A, Avouris P, Lesage F, Salahub DR. Electrical and mechanical properties of distorted carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 60: 13824-13830. DOI: 10.1103/Physrevb.60.13824  0.72
1999 Martel R, Shea HR, Avouris P. Ring Formation in Single-Wall Carbon Nanotubes Journal of Physical Chemistry B. 103: 7551-7556. DOI: 10.1021/Jp991513Z  0.4
1999 Shea HR, Martel R, Hertel T, Schmidt T, Avouris P. Manipulation of carbon nanotubes and properties of nanotube field-effect transistors and rings Microelectronic Engineering. 46: 101-104. DOI: 10.1016/S0167-9317(99)00025-8  0.44
1998 Hertel T, Walkup RE, Avouris P. Deformation of carbon nanotubes by surface van der Waals forces Physical Review B. 58: 13870-13873. DOI: 10.1103/Physrevb.58.13870  0.44
1998 Martel R, Schmidt T, Shea HR, Hertel T, Avouris P. Single- and multi-wall carbon nanotube field-effect transistors Applied Physics Letters. 73: 2447-2449. DOI: 10.1063/1.122477  0.44
1998 Schmidt T, Martel R, Sandstrom RL, Avouris P. Current-induced local oxidation of metal films: Mechanism and quantum-size effects Applied Physics Letters. 73: 2173-2175. DOI: 10.1063/1.122413  0.4
1998 Hertel T, Martel R, Avouris P. Manipulation of Individual Carbon Nanotubes and Their Interaction with Surfaces Journal of Physical Chemistry B. 102: 910-915. DOI: 10.1021/Jp9734686  0.44
1998 Rochefort A, Salahub DR, Avouris P. The effect of structural distortions on the electronic structure of carbon nanotubes Chemical Physics Letters. 297: 45-50. DOI: 10.1016/S0009-2614(98)01105-1  0.72
1998 Avouris P, Martel R, Hertel T, Sandstrom R. Afm-Tip-Induced And Current-Induced Local Oxidation Of Silicon And Metals Applied Physics A. 66: 659-667. DOI: 10.1007/S003390051218  0.44
1997 Avouris P, Hertel T, Martel R. Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication Applied Physics Letters. 71: 285-287. DOI: 10.1063/1.119521  0.44
1996 Martel R, Avouris P, Lyo I-. Molecularly Adsorbed Oxygen Species on Si(111)-(7×7): STM-Induced Dissociative Attachment Studies Science. 272: 385-388. DOI: 10.1126/Science.272.5260.385  0.4
1996 Avouris P, Walkup RE, Rossi AR, Shen TC, Abeln GC, Tucker JR, Lyding JW. STM-induced H atom desorption from Si(100): isotope effects and site selectivity Chemical Physics Letters. 257: 148-154. DOI: 10.1016/0009-2614(96)00518-0  0.44
1995 Shen TC, Wang C, Abeln GC, Tucker JR, Lyding JW, Avouris P, Walkup RE. Atomic scale desorption through electronic and vibrational excitation mechanisms Science. 268: 1590-1592. PMID 17754609 DOI: 10.1126/Science.268.5217.1590  0.44
1994 Avouris P, Lyo I‐, Walkup RE, Hasegawa Y. Real space imaging of electron scattering phenomena at metal surfaces Journal of Vacuum Science & Technology B. 12: 1447-1455. DOI: 10.1116/1.587314  0.44
1994 Wintterlin J, Avouris P. Scanning tunneling microscopy (STM) studies of the chemical vapor deposition of Ge on Si(111) from Ge hydrides and a comparison with molecular beam epitaxy Journal of Chemical Physics. 100: 687-704. DOI: 10.1063/1.466934  0.68
1993 Walkup RE, Newns DM, Avouris P. Role of multiple inelastic transitions in atom transfer with the scanning tunneling microscope. Physical Review B. 48: 1858-1861. PMID 10008551 DOI: 10.1103/Physrevb.48.1858  0.44
1993 Walkup RE, Newns DM, Avouris P. Vibrational Heating and Atom Transfer with the STM Journal of Electron Spectroscopy and Related Phenomena. 523-532. DOI: 10.1016/0368-2048(93)80118-6  0.44
1993 Wintterlin J, Avouris P. Hydrogen effects in CVD: Selective etching and metastable phases Surface Science. 286. DOI: 10.1016/0167-2584(93)90604-H  0.68
1992 Dujardin G, Walkup RE, Avouris P. Dissociation of individual molecules with electrons from the tip of a scanning tunneling microscope. Science. 255: 1232-1235. PMID 17816830 DOI: 10.1126/Science.255.5049.1232  0.44
1989 Walkup RE, Avouris P, Lang ND, Kawai R. Ion-surface interactions and electronically stimulated desorption of physisorbed atoms. Physical Review Letters. 63: 1972-1975. PMID 10040728 DOI: 10.1103/Physrevlett.63.1972  0.44
1989 Walkup RE, Avouris P. Lattice-recoil effects in stimulated desorption from metal surfaces. Physical Review B. 39: 5504-5507. PMID 9948948 DOI: 10.1103/Physrevb.39.5504  0.44
1987 Walkup RE, Avouris P, Ghosh AP. Positive-ion production by electron bombardment of alkali halides. Physical Review. B, Condensed Matter. 36: 4577-4580. PMID 9943468 DOI: 10.1103/Physrevb.36.4577  0.44
1987 Walkup RE, Avouris P, Ghosh AP. Excited-atom production by electron and ion bombardment of alkali halides Journal of Vacuum Science & Technology B. 5: 1423-1426. DOI: 10.1116/1.583628  0.44
1987 Avouris P, Bozso F, Walkup RE. Desorption via electronic transitions: Fundamental mechanisms and applications Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 27: 136-146. DOI: 10.1016/0168-583X(87)90014-0  0.44
1986 Walkup RE, Avouris P, Ghosh AP. Excited-atom production by electron bombardment of alkali halides. Physical Review Letters. 57: 2227-2230. PMID 10033668 DOI: 10.1103/Physrevlett.57.2227  0.44
1986 Walkup RE, Avouris P. Classical-trajectory studies of electron- or photon-stimulated desorption from ionic solids. Physical Review Letters. 56: 524-527. PMID 10033214 DOI: 10.1103/Physrevlett.56.524  0.44
1986 Walkup RE, Avouris P, Ghosh AP. Excited-Atom Production by Electron Bombardment of Alkali-Halides Mrs Proceedings. 75: 599. DOI: 10.1557/Proc-75-599  0.44
1986 Walkup RE, Avouris P. Dynamics of Electron and Photon Stimulated Desorption Mrs Proceedings. 68: 435. DOI: 10.1557/Proc-68-435  0.44
1986 Walkup RE, Avouris P. Summary Abstract: Classical trajectory calculations of photon‐stimulated desorption of ions from alkali–halides Journal of Vacuum Science and Technology. 4: 1247-1247. DOI: 10.1116/1.573408  0.44
1984 Avouris PH, Demuth JE, DiNardo NJ. Summary Abstract: Excited states of physisorbed and chemisorbed adsorbates and their decay mechanisms Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 1050-1051. DOI: 10.1116/1.572652  0.72
1984 Demuth JE, Avouris P. Oversight in overview Physics Today. 37: 109. DOI: 10.1063/1.2916182  0.72
1983 Cheung WY, Chupka WA, Colson SD, Gauyacq D, Avouris P, Wynne JJ. Rydberg-Rydberg transitions of NO using an optical-optical double resonance multiphoton ionization technique The Journal of Chemical Physics. 78: 3625-3634. DOI: 10.1063/1.445191  0.72
1981 Avouris P, Rossi AR, Albrecht AC. Electronic band-shape calculations in ammonia The Journal of Chemical Physics. 74: 5516-5520. DOI: 10.1063/1.440958  0.72
1975 Kordas J, Avouris P, El-Bayoumi MA. Effect of temperature on the oscillator strength of a nonrigid molecule Journal of Physical Chemistry. 79: 2420-2423. DOI: 10.1021/J100589A015  0.72
1975 El-Bayoumi MA, Avouris P. Dynamics Of Double Proton Transfer In The Excited State Of 7-Azaindole Hydrogen Bonded Dimer, A Time-Resolved Fluorescence Study Cheminform. 6. DOI: 10.1002/Chin.197525054  0.96
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