312 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Schall D, Mohsin M, Sagade AA, Otto M, Chmielak B, Suckow S, Giesecke AL, Neumaier D, Kurz H. Infrared transparent graphene heater for silicon photonic integrated circuits. Optics Express. 24: 7871-8. PMID 27137229 DOI: 10.1364/Oe.24.007871  0.33
2014 Plötzing T, Winzer T, Malic E, Neumaier D, Knorr A, Kurz H. Experimental verification of carrier multiplication in graphene. Nano Letters. 14: 5371-5375. PMID 25144320 DOI: 10.1021/Nl502114W  0.333
2014 Mohsin M, Schall D, Otto M, Noculak A, Neumaier D, Kurz H. Graphene based low insertion loss electro-absorption modulator on SOI waveguide. Optics Express. 22: 15292-7. PMID 24977619 DOI: 10.1364/Oe.22.015292  0.314
2014 Matheisen C, Waldow M, Chmielak B, Sawallich S, Wahlbrink T, Bolten J, Nagel M, Kurz H. Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices. Optics Express. 22: 5252-9. PMID 24663865 DOI: 10.1364/Oe.22.005252  0.354
2014 Schall D, Neumaier D, Mohsin M, Chmielak B, Bolten J, Porschatis C, Prinzen A, Matheisen C, Kuebart W, Junginger B, Templ W, Giesecke AL, Kurz H. 50 GBit/s Photodetectors Based on Wafer-Scale Graphene for Integrated Silicon Photonic Communication Systems Acs Photonics. 1: 781-784. DOI: 10.1021/Ph5001605  0.33
2014 Prinzen A, Bolten J, Waldow M, Kurz H. Study on fabrication tolerances of SOI based directional couplers and ring resonators Microelectronic Engineering. 121: 51-54. DOI: 10.1016/J.Mee.2014.03.019  0.31
2014 Bolten J, Manecke C, Wahlbrink T, Waldow M, Kurz H. At low costs: Study on optical propagation losses of silicon waveguides fabricated by electron beam lithography Microelectronic Engineering. 123: 1-3. DOI: 10.1016/J.Mee.2014.03.009  0.306
2013 Chmielak B, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Waldow M, Kurz H. Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides. Optics Express. 21: 25324-32. PMID 24150373 DOI: 10.1364/Oe.21.025324  0.303
2013 Leuthold J, Koos C, Freude W, Alloatti L, Palmer R, Korn D, Pfeifle J, Lauermann M, Dinu R, Wehrli S, Jazbinsek M, Günter P, Waldow M, Wahlbrink T, Bolten J, ... Kurz H, et al. Silicon-Organic hybrid electro-optical devices Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2271846  0.332
2013 Khandelwal R, Plachetka U, Min B, Moormann C, Kurz H. A comparative study based on optical and electrical performance of micro- and nano-textured surfaces for silicon solar cells Microelectronic Engineering. 111: 220-223. DOI: 10.1016/J.Mee.2013.03.162  0.326
2013 Kim JW, Plachetka U, Moormann C, Kurz H. Fabrication of inverse micro/nano pyramid structures using soft UV-NIL and wet chemical methods for residual layer removal and Si-etching Microelectronic Engineering. 110: 403-407. DOI: 10.1016/J.Mee.2013.02.098  0.317
2013 Plachetka U, Kim JW, Khandelwal R, Windgassen H, Moormann C, Kurz H. Tailored etching processes for UV-NIL resist material for Si-antireflective surfaces Microelectronic Engineering. 110: 361-364. DOI: 10.1016/J.Mee.2013.02.063  0.34
2012 Safiei A, Derix R, Suckow S, Koch H, Breuer U, Pletzer TM, Wolter K, Kurz H. SiliconPV 2012 generation of defect-related acceptor states by laser doping Solar Energy Materials and Solar Cells. 106: 2-6. DOI: 10.1016/J.Solmat.2012.06.045  0.317
2012 Koo N, Schmidt M, Mollenhauer T, Moormann C, Schlachter F, Kurz H. Fabrication of MOSFETs by 3D soft UV-nanoimprint Microelectronic Engineering. 97: 85-88. DOI: 10.1016/J.Mee.2012.05.015  0.337
2012 Safiei A, Windgassen H, Wolter K, Kurz H. Emitter Profile Tailoring to Contact Homogeneous High Sheet Resistance Emitter Energy Procedia. 27: 432-437. DOI: 10.1016/J.Egypro.2012.07.089  0.344
2011 Chmielak B, Waldow M, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Nagel M, Merget F, Kurz H. Pockels effect based fully integrated, strained silicon electro-optic modulator. Optics Express. 19: 17212-9. PMID 21935084 DOI: 10.1364/Oe.19.017212  0.344
2011 Nagel M, Michalski A, Botzem T, Kurz H. Near-field investigation of THz surface-wave emission from optically excited graphite flakes. Optics Express. 19: 4667-4672. PMID 21369298 DOI: 10.1364/Oe.19.004667  0.358
2011 Pletzer TM, Stegemann EFR, Windgassen H, Suckow S, Bätzner DL, Kurz H. Gettering in multicrystalline silicon wafers with screen‐printed emitters Progress in Photovoltaics. 19: 946-953. DOI: 10.1002/Pip.1099  0.301
2010 Schönenberger S, Stöferle T, Moll N, Mahrt RF, Dahlem MS, Wahlbrink T, Bolten J, Mollenhauer T, Kurz H, Offrein BJ. Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator. Optics Express. 18: 22485-96. PMID 20941147 DOI: 10.1364/Oe.18.022485  0.363
2010 Kray S, Spöler F, Hellerer T, Kurz H. Electronically controlled coherent linear optical sampling for optical coherence tomography. Optics Express. 18: 9976-90. PMID 20588852 DOI: 10.1364/Oe.18.009976  0.334
2010 Wächter M, Matheisen C, Waldow M, Wahlbrink T, Bolten J, Nagel M, Kurz H. Optical generation of terahertz and second-harmonic light in plasma-activated silicon nanophotonic structures Applied Physics Letters. 97: 161107. DOI: 10.1063/1.3503586  0.351
2010 Szafranek BN, Schall D, Otto M, Neumaier D, Kurz H. Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature Applied Physics Letters. 96: 112103. DOI: 10.1063/1.3364139  0.301
2010 Berghoff B, Suckow S, Rölver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J. Quantum wells based on Si/SiOx stacks for nanostructured absorbers Solar Energy Materials and Solar Cells. 94: 1893-1896. DOI: 10.1016/J.Solmat.2010.06.033  0.314
2010 Suckow S, Berghoff B, Kurz H. Geometric broadening in resonant tunneling through Si quantum dots Energy Procedia. 2: 207-212. DOI: 10.1016/J.Egypro.2010.07.030  0.304
2009 Lemme MC, Gottlob HDB, Echtermeyer TJ, Schmidt M, Kurz H, Endres R, Schwalke U, Czernohorkky M, Tetzlaff D, Osten HJ. Complementary metal oxide semiconductor integration of epitaxial Gd2O3 Journal of Vacuum Science & Technology B. 27: 258-261. DOI: 10.1116/1.3054350  0.3
2009 Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engström O, Newcomb SB. Gd silicate: A high-k dielectric compatible with high temperature annealing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 249-252. DOI: 10.1116/1.3025904  0.325
2009 Berghoff B, Suckow S, Rölver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J. Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers Journal of Applied Physics. 106. DOI: 10.1063/1.3238294  0.32
2009 Wächter M, Nagel M, Kurz H. Tapered photoconductive terahertz field probe tip with subwavelength spatial resolution Applied Physics Letters. 95: 41112. DOI: 10.1063/1.3189702  0.344
2009 Awad M, Nagel M, Kurz H. Tapered Sommerfeld wire terahertz near-field imaging Applied Physics Letters. 94: 51107. DOI: 10.1063/1.3078278  0.316
2009 Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H. Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Solid-State Electronics. 53: 1246-1251. DOI: 10.1016/J.Sse.2009.09.017  0.341
2009 Gottlob HDB, Schmidt M, Stefani A, Lemme MC, Kurz H, Mitrovic IZ, Davey WM, Hall S, Werner M, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engström O, Newcomb SB. Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics Microelectronic Engineering. 86: 1642-1645. DOI: 10.1016/J.Mee.2009.03.084  0.317
2009 Wahlbrink T, Tsai WS, Waldow M, Först M, Bolten J, Mollenhauer T, Kurz H. Fabrication of high efficiency SOI taper structures Microelectronic Engineering. 86: 1117-1119. DOI: 10.1016/J.Mee.2009.01.047  0.309
2008 Awad M, Nagel M, Kurz H. Negative-index metamaterial with polymer-embedded wire-pair structures at terahertz frequencies. Optics Letters. 33: 2683-5. PMID 19015708 DOI: 10.1364/Ol.33.002683  0.32
2008 Kray S, Spöler F, Först M, Kurz H. Dual femtosecond laser multiheterodyne optical coherence tomography. Optics Letters. 33: 2092-4. PMID 18794941 DOI: 10.1364/Ol.33.002092  0.318
2008 Waldow M, Plötzing T, Gottheil M, Först M, Bolten J, Wahlbrink T, Kurz H. 25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator. Optics Express. 16: 7693-702. PMID 18545478 DOI: 10.1364/Oe.16.007693  0.306
2008 Gottlob HDB, Echtermeyer TJ, Schmidt M, Mollenhauer T, Wahlbrink T, Lemme MC, Kurz H. Leakage Current Mechanisms in Epitaxial Gd2O3 High-k Gate Dielectrics Electrochemical and Solid State Letters. 11. DOI: 10.1149/1.2828201  0.319
2008 Plachetka U, Koo N, Wahlbrink T, Bolten J, Waldow M, Plotzing T, Forst M, Kurz H. Fabrication of Photonic Ring Resonator Device in Silicon Waveguide Technology Using Soft UV-Nanoimprint Lithography Ieee Photonics Technology Letters. 20: 490-492. DOI: 10.1109/Lpt.2008.918386  0.314
2008 Czernohorsky M, Tetzlaff D, Bugiel E, Dargis R, Osten HJ, Gottlob HDB, Schmidt M, Lemme MC, Kurz H. Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing Semiconductor Science and Technology. 23: 35010. DOI: 10.1088/0268-1242/23/3/035010  0.311
2008 Berghoff B, Suckow S, Rölver R, Spangenberg B, Kurz H, Dimyati A, Mayer J. Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in SiO2 Applied Physics Letters. 93. DOI: 10.1063/1.2992057  0.31
2008 Rölver R, Berghoff B, Bätzner DL, Spangenberg B, Kurz H. Lateral Si/SiO2 quantum well solar cells Applied Physics Letters. 92. DOI: 10.1063/1.2936308  0.317
2008 Wächter M, Nagel M, Kurz H. Low-loss terahertz transmission through curved metallic slit waveguides fabricated by spark erosion Applied Physics Letters. 92: 161102. DOI: 10.1063/1.2913006  0.327
2008 Rölver R, Berghoff B, Bätzner D, Spangenberg B, Kurz H, Schmidt M, Stegemann B. Si/SiO2 multiple quantum wells for all silicon tandem cells: Conductivity and photocurrent measurements Thin Solid Films. 516: 6763-6766. DOI: 10.1016/J.Tsf.2007.12.087  0.338
2008 Gottlob HDB, Lemme MC, Schmidt M, Echtermeyer TJ, Mollenhauer T, Kurz H, Cherkaoui K, Hurley PK, Newcomb SB. Gentle FUSI NiSi metal gate process for high-k dielectric screening Microelectronic Engineering. 85: 2019-2021. DOI: 10.1016/J.Mee.2008.03.016  0.302
2008 Wahlbrink T, Bolten J, Mollenhauer T, Kurz H, Baumann K, Moll N, Stöferle T, Mahrt RF. Fabrication and characterization of Ta2O5 photonic feedback structures Microelectronic Engineering. 85: 1425-1428. DOI: 10.1016/J.Mee.2008.01.059  0.327
2007 Spöler F, Kray S, Grychtol P, Hermes B, Bornemann J, Först M, Kurz H. Simultaneous dual-band ultra-high resolution optical coherence tomography. Optics Express. 15: 10832-41. PMID 19547440 DOI: 10.1364/Oe.15.010832  0.303
2007 Först M, Niehusmann J, Plötzing T, Bolten J, Wahlbrink T, Moormann C, Kurz H. High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators. Optics Letters. 32: 2046-8. PMID 17632638 DOI: 10.1364/Ol.32.002046  0.343
2007 Wagner JM, Seino K, Bechstedt F, Dymiati A, Mayer J, Rölver R, Först M, Berghoff B, Spangenberg B, Kurz H. Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1500-1504. DOI: 10.1116/1.2779040  0.334
2007 Awad M, Nagel M, Kurz H, Herfort J, Ploog K. Characterization of low temperature GaAs antenna array terahertz emitters Applied Physics Letters. 91: 181124. DOI: 10.1063/1.2800885  0.344
2007 Wächter M, Nagel M, Kurz H. Metallic slit waveguide for dispersion-free low-loss terahertz signal transmission Applied Physics Letters. 90: 61111. DOI: 10.1063/1.2472544  0.316
2007 Kuttge M, Kurz H, Rivas JG, Sánchez-Gil JA, Bolívar PH. Analysis of the propagation of terahertz surface plasmon polaritons on semiconductor groove gratings Journal of Applied Physics. 101: 23707. DOI: 10.1063/1.2409895  0.344
2007 Echtermeyer T, Gottlob HDB, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi JK, Lemme MC, Kurz H. Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes Solid-State Electronics. 51: 617-621. DOI: 10.1016/J.Sse.2007.02.008  0.304
2007 Turchanikov VI, Nazarov AN, Lysenko VS, Ostahov V, Winkler O, Spangenberg B, Kurz H. Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation Microelectronics Reliability. 47: 626-630. DOI: 10.1016/J.Microrel.2007.01.075  0.304
2007 Först M, Nagel M, Awad M, Wächter M, Dekorsy T, Kurz H. Coherent and ultrafast optoelectronics in III–V semiconductor compounds Physica Status Solidi B-Basic Solid State Physics. 244: 2971-2987. DOI: 10.1002/Pssb.200675615  0.373
2006 Nagel M, Marchewka A, Kurz H. Low-index discontinuity terahertz waveguides. Optics Express. 14: 9944-54. PMID 19529388 DOI: 10.1364/Oe.14.009944  0.351
2006 Fuchs A, Bender M, Plachetka U, Kock L, Wahlbrink T, Gottlob HDB, Efavi JK, Moeller M, Schmidt M, Mollenhauer T, Moormann C, Lemme MC, Kurz H. Nanowire fin field effect transistors via UV-based nanoimprint lithography Journal of Vacuum Science & Technology B. 24: 2964-2967. DOI: 10.1116/1.2395956  0.325
2006 Gottlob HDB, Mollenhauer T, Wahlbrink T, Schmidt M, Echtermeyer T, Efavi JK, Lemme MC, Kurz H. Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics Journal of Vacuum Science & Technology B. 24: 710-714. DOI: 10.1116/1.2180256  0.345
2006 Rölver R, Först M, Winkler O, Spangenberg B, Kurz H. Influence of excitonic singlet-triplet splitting on the photoluminescence of Si∕SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition Journal of Vacuum Science and Technology. 24: 141-145. DOI: 10.1116/1.2141620  0.376
2006 Rivas JG, Sánchez-Gil JA, Kuttge M, Bolivar PH, Kurz H. Optically switchable mirrors for surface plasmon polaritons propagating on semiconductor surfaces Physical Review B. 74: 245324. DOI: 10.1103/Physrevb.74.245324  0.337
2006 Liberis J, Matulioniene I, Matulionis A, Lemme MC, Kurz H, Först M. Hot-phonon temperature and lifetime in biased boron-implanted SiO2/Si/SiO2 channels Semiconductor Science and Technology. 21: 803-807. DOI: 10.1088/0268-1242/21/6/017  0.343
2006 Rivas JG, Kuttge M, Kurz H, Bolivar PH, Sánchez-Gil JA. Low-frequency active surface plasmon optics on semiconductors Applied Physics Letters. 88: 82106. DOI: 10.1063/1.2177348  0.342
2006 Lemme MC, Efavi JK, Mollenhauer T, Schmidt M, Gottlob HDB, Wahlbrink T, Kurz H. Nanoscale TiN metal gate technology for CMOS integration Microelectronic Engineering. 83: 1551-1554. DOI: 10.1016/J.Mee.2006.01.161  0.302
2005 Wåchter M, Nagel M, Kurz H. Frequency-dependent characterization of THz Sommerfeld wave propagation on single-wires Optics Express. 13: 10815-10822. PMID 19503299 DOI: 10.1364/Opex.13.010815  0.307
2005 Gómez Rivas J, Janke C, Bolivar P, Kurz H. Transmission of THz radiation through InSb gratings of subwavelength apertures. Optics Express. 13: 847-59. PMID 19494946 DOI: 10.1364/Opex.13.000847  0.322
2005 Janke C, Rivas JG, Bolivar PH, Kurz H. All-optical switching of the transmission of electromagnetic radiation through subwavelength apertures. Optics Letters. 30: 2357-9. PMID 16196318 DOI: 10.1364/Ol.30.002357  0.337
2005 Janke C, Först M, Nagel M, Kurz H, Bartels A. Asynchronous optical sampling for high-speed characterization of integrated resonant terahertz sensors. Optics Letters. 30: 1405-7. PMID 15981548 DOI: 10.1364/Ol.30.001405  0.339
2005 Rölver R, Brüninghoff S, Först M, Spangenberg B, Kurz H. Fabrication of a Si∕SiO2 multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology B. 23: 3214-3218. DOI: 10.1116/1.2074867  0.322
2005 Rivas JG, Benet AF, Niehusmann J, Bolivar PH, Kurz H. Time-resolved broadband analysis of slow-light propagation and superluminal transmission of electromagnetic waves in three-dimensional photonic crystals Physical Review B. 71: 155110. DOI: 10.1103/Physrevb.71.155110  0.316
2005 Kim D, Merget F, Laurenzis M, Bolivar PH, Kurz H. Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition Journal of Applied Physics. 97: 83538. DOI: 10.1063/1.1875742  0.32
2005 Turchanikov VI, Nazarov AN, Lysenko VS, Winkler O, Spangenberg B, Kurz H. Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots Materials Science and Engineering B-Advanced Functional Solid-State Materials. 124: 517-520. DOI: 10.1016/J.Mseb.2005.08.068  0.323
2005 Rölver R, Winkler O, Först M, Spangenberg B, Kurz H. Light emission from Si/SiO2 superlattices fabricated by RPECVD Microelectronics Reliability. 45: 915-918. DOI: 10.1016/J.Microrel.2004.11.025  0.357
2005 Schmidt M, Mollenhauer T, Gottlob HDB, Wahlbrink T, Efavi JK, Ottaviano L, Cristoloveanu S, Lemme MC, Kurz H. Nickel-silicide process for ultra-thin-body SOI-MOSFETs Microelectronic Engineering. 82: 497-502. DOI: 10.1016/J.Mee.2005.07.049  0.313
2005 Efavi JK, Mollenhauer T, Wahlbrink T, Gottlob HDB, Lemme MC, Kurz H. Tungsten work function engineering for dual metal gate nano-CMOS Journal of Materials Science: Materials in Electronics. 16: 433-436. DOI: 10.1007/S10854-005-2310-8  0.316
2004 Rivas JG, Kuttge M, Bolivar PH, Kurz H, Sánchez-Gil JA. Propagation of surface plasmon polaritons on semiconductor gratings. Physical Review Letters. 93: 256804. PMID 15697927 DOI: 10.1103/Physrevlett.93.256804  0.366
2004 Niehusmann J, Vörckel A, Bolivar PH, Wahlbrink T, Henschel W, Kurz H. Ultrahigh-quality-factor silicon-on-insulator microring resonator. Optics Letters. 29: 2861-3. PMID 15645805 DOI: 10.1364/Ol.29.002861  0.313
2004 Rivas JG, Bolivar PH, Kurz H. Thermal switching of the enhanced transmission of terahertz radiation through subwavelength apertures. Optics Letters. 29: 1680-1682. PMID 15309858 DOI: 10.1364/Ol.29.001680  0.323
2004 Laurenzis M, Först M, Bolivar PH, Kurz H. Influence of Hot Carrier Diffusion on the Density Limitation of Optical Data Storage Japanese Journal of Applied Physics. 43: 4700-4703. DOI: 10.1143/Jjap.43.4700  0.337
2004 Hadjiloucas S, Galvao RKH, Becerra VM, Bowen JW, Martini R, Brucherseifer M, Pellemans HPM, Bolivar PH, Kurz H, Chamberlain JM. Comparison of subspace and ARX models of a waveguide's terahertz transient response after optimal wavelet filtering Ieee Transactions On Microwave Theory and Techniques. 52: 2409-2419. DOI: 10.1109/Tmtt.2004.835983  0.539
2004 Saxler J, Gómez Rivas J, Janke C, Pellemans HPM, Haring Bolívar P, Kurz H. Time-domain measurements of surface plasmon polaritons in the terahertz frequency range Physical Review B - Condensed Matter and Materials Physics. 69: 155427-1-155427-4. DOI: 10.1103/Physrevb.69.155427  0.359
2004 Lemme MC, Moormann C, Lerch H, Moller M, Vratzov B, Kurz H. Triple-gate metal?oxide?semiconductor field effect transistors fabricated with interference lithography Nanotechnology. 15. DOI: 10.1088/0957-4484/15/4/016  0.306
2004 Henschel W, Wahlbrink T, Georgiev YM, Lemme MC, Mollenhauer T, Vratzov B, Fuchs A, Kurz H, Kittler M, Schwierz F. Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates Solid-State Electronics. 48: 739-745. DOI: 10.1016/J.Sse.2003.09.037  0.325
2004 Lemme MC, Mollenhauer T, Henschel W, Wahlbrink T, Baus M, Winkler O, Granzner R, Schwierz F, Spangenberg B, Kurz H. Subthreshold behavior of triple-gate MOSFETs on SOI material Solid-State Electronics. 48: 529-534. DOI: 10.1016/J.Sse.2003.09.027  0.302
2004 Mizoguchi K, Hino T, Nakayama M, Dekorsy T, Bartels A, Kurz H, Nakashima S. Umklapp process in observation of coherent folded longitudinal acoustic phonons in a GaAs/AlAs long-period superlattice Physica E-Low-Dimensional Systems & Nanostructures. 21: 646-650. DOI: 10.1016/J.Physe.2003.11.096  0.323
2004 Efavi J, Lemme M, Mollenhauer T, Wahlbrink T, Bobek T, Wang D, Gottlob H, Kurz H. Investigation of NiAlN as gate-material for submicron CMOS technology Microelectronic Engineering. 76: 354-359. DOI: 10.1016/J.Mee.2004.07.050  0.331
2004 Winkler O, Baus M, Spangenberg B, Kurz H. Floating nano-dot MOS capacitor memory arrays without cell transistors Microelectronic Engineering. 73: 719-724. DOI: 10.1016/J.Mee.2004.03.041  0.317
2004 Baus M, Lemme MC, Chmielus S, Sittig R, Spangenberg B, Kurz H. Fabrication of monolithic bidirectional switch devices Microelectronic Engineering. 73: 463-467. DOI: 10.1016/J.Mee.2004.03.018  0.3
2004 Lemme MC, Mollenhauer T, Gottlob H, Henschel W, Efavi J, Welch C, Kurz H. Highly selective HBr etch process for fabrication of triple-gate nano-scale SOI-MOSFETs Microelectronic Engineering. 73: 346-350. DOI: 10.1016/J.Mee.2004.02.065  0.33
2004 Nüsse S, Wolter F, Bolivar PH, Köhler K, Hey R, Grahn HT, Kurz H. Intraband coherence of Bloch oscillations after momentum scattering Applied Physics A. 78: 491-495. DOI: 10.1007/S00339-003-2409-9  0.321
2004 Rivas JG, Janke C, Bolívar PH, Kurz H. Surface-plasmon-polariton enhanced tunneling of THz radiation through arrays of sub-wavelength apertures Springer Series in Chemical Physics. 690-692. DOI: 10.1007/3-540-27213-5_209  0.328
2004 Först M, Kurz H, Dekorsy T, Leavitt RP. Well-width dependence of coupled Bloch-phonon oscillations in biased InGaAs/InAlAs superlattices Physica Status Solidi (C). 1: 2702-2705. DOI: 10.1002/Pssc.200405315  0.383
2003 Hadjiloucas S, Galvão RKH, Bowen JW, Martini R, Brucherseifer M, Pellemans HPM, Bolívar PH, Kurz H, Digby J, Parkhurst GM, Chamberlain JM. Measurement of propagation constant in waveguides with wideband coherent terahertz spectroscopy Journal of the Optical Society of America B. 20: 391. DOI: 10.1364/Josab.20.000391  0.582
2003 Henschel W, Wahlbrink T, Georgiev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H. Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates Journal of Vacuum Science & Technology B. 21: 2975-2979. DOI: 10.1116/1.1621670  0.355
2003 Vorckel A, Monster M, Henschel W, Bolivar PH, Kurz H. Asymmetrically coupled silicon-on-insulator microring resonators for compact add-drop multiplexers Ieee Photonics Technology Letters. 15: 921-923. DOI: 10.1109/Lpt.2003.813419  0.308
2003 Rivas JG, Schotsch C, Bolivar PH, Kurz H. Enhanced transmission of THz radiation through subwavelength holes Physical Review B. 68: 201306. DOI: 10.1103/Physrevb.68.201306  0.333
2003 Janke C, Bolivar PH, Bartels A, Kurz H, Künzel H. Inversionless amplification of coherent terahertz radiation Physical Review B. 67: 155206. DOI: 10.1103/Physrevb.67.155206  0.33
2003 Först M, Kurz H, Dekorsy T, Leavitt RP. Bloch-phonon coupling and tunneling-induced coherent phonon excitation in semiconductor superlattices Physical Review B. 67. DOI: 10.1103/Physrevb.67.085305  0.371
2003 Zedler M, Janke C, Bolivar PH, Kurz H, Künzel H. Improved coherent terahertz emission by modification of the dielectric environment Applied Physics Letters. 83: 4196-4198. DOI: 10.1063/1.1628400  0.361
2003 Nositschka WA, Beneking C, Voigt O, Kurz H. Texturisation of multicrystalline silicon wafers for solar cells by reactive ion etching through colloidal masks Solar Energy Materials and Solar Cells. 76: 155-166. DOI: 10.1016/S0927-0248(02)00214-3  0.306
2003 Hofmann K, Spangenberg B, Luysberg M, Kurz H. Properties of evaporated titanium thin films and their possible application in single electron devices Thin Solid Films. 436: 168-174. DOI: 10.1016/S0040-6090(03)00582-0  0.311
2002 Bartels A, Kurz H. Generation of a broadband continuum by a Ti:sapphire femtosecond oscillator with a 1-GHz repetition rate. Optics Letters. 27: 1839-41. PMID 18033380 DOI: 10.1364/Ol.27.001839  0.352
2002 Nagel M, Bolivar PH, Brucherseifer M, Kurz H, Bosserhoff A, Büttner R. Integrated planar terahertz resonators for femtomolar sensitivity label-free detection of DNA hybridization. Applied Optics. 41: 2074-8. PMID 11936814 DOI: 10.1364/Ao.41.002074  0.323
2002 Hofmann K, Spangenberg B, Kurz H. Modified design for fabrication of metal based single electron transistors Journal of Vacuum Science & Technology B. 20: 271-273. DOI: 10.1116/1.1434969  0.311
2002 Brucherseifer M, Bolivar PH, Kurz H. Combined optical and spatial modulation THz-spectroscopy for the analysis of thin-layered systems Applied Physics Letters. 81: 1791-1793. DOI: 10.1063/1.1505118  0.349
2002 Herbst M, Schramm C, Brunner K, Asperger T, Riedl H, Abstreiter G, Vörckel A, Kurz H, Müller E. Structural and optical properties of vertically correlated Ge island layers grown at low temperatures Materials Science and Engineering B-Advanced Functional Solid-State Materials. 89: 54-57. DOI: 10.1016/S0921-5107(01)00756-5  0.359
2001 Sekine N, Hirakawa K, Voßebürger M, Bolivar PH, Kurz H. Crossover from coherent to incoherent excitation of two-dimensional plasmons in GaAs/Al x Ga 1-x As single quantum wells by femtosecond laser pulses Physical Review B. 64: 201323. DOI: 10.1103/Physrevb.64.201323  0.354
2001 Kyrsta S, Cremer R, Neuschütz D, Laurenzis M, Bolivar PH, Kurz H. Deposition and characterization of Ge–Sb–Te layers for applications in optical data storage Applied Surface Science. 179: 55-60. DOI: 10.1016/S0169-4332(01)00263-X  0.36
2001 Bobek T, Facsko S, Dekorsy T, Kurz H. Ordered quantum dot formation on GaSb surfaces during ion sputtering Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 178: 101-104. DOI: 10.1016/S0168-583X(00)00468-7  0.309
2001 Hofmann K, Spangenberg B, Kurz H. In situ fabrication of vertical tunnel junctions for SET devices Microelectronic Engineering. 57: 851-856. DOI: 10.1016/S0167-9317(01)00563-9  0.31
2001 Kyrsta S, Cremer R, Neuschütz D, Laurenzis M, Bolivar PH, Kurz H. Characterization of Ge–Sb–Te thin films deposited using a composition-spread approach Thin Solid Films. 398: 379-384. DOI: 10.1016/S0040-6090(01)01384-0  0.312
2001 Nagel M, Dekorsy T, Brucherseifer M, Bolívar PH, Kurz H. Characterization of polypropylene thin-film microstrip lines at millimeter and submillimeter wavelengths Microwave and Optical Technology Letters. 29: 97-100. DOI: 10.1002/Mop.1096  0.304
2000 Bartels A, Dekorsy T, Kurz H. Impulsive excitation of phonon-pair combination states by second-order raman scattering Physical Review Letters. 84: 2981-4. PMID 11018991 DOI: 10.1103/Physrevlett.84.2981  0.323
2000 Dekorsy T, Bartels A, Kurz H, Kohler K, Hey R, Ploog K. Coupled bloch-phonon oscillations in semiconductor superlattices Physical Review Letters. 85: 1080-3. PMID 10991479 DOI: 10.1103/Physrevlett.85.1080  0.359
2000 Hofmann K, Luysberg M, Spangenberg B, Kurz H. Electrical And Microscopic Investigation Of E-Gun Evaporated Titanium Thin Films Mrs Proceedings. 615. DOI: 10.1557/Proc-615-G6.5.1  0.301
2000 Trappe C, Béchevet B, Hyot B, Winkler O, Facsko S, Kurz H. Recrystallization Dynamics of Phase Change Optical Disks with a Nitrogen Interface Layer Japanese Journal of Applied Physics. 39: 766-769. DOI: 10.1143/Jjap.39.766  0.341
2000 Först M, Segschneider G, Dekorsy T, Kurz H, Köhler K. Midbandgap electro-optic detection of Bloch oscillations Physical Review B. 61. DOI: 10.1103/Physrevb.61.R10563  0.371
2000 Hawker P, Kent AJ, Challis LJ, Bartels A, Dekorsy T, Kurz H, Köhler K. Observation of coherent zone-folded acoustic phonons generated by Raman scattering in a superlattice Applied Physics Letters. 77: 3209-3211. DOI: 10.1063/1.1324981  0.359
2000 Dekorsy T, Bartels A, Kurz H, Ghosh A, Jönsson L, Wilkins J, Köhler K, Hey R, Ploog K. Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment Physica E: Low-Dimensional Systems and Nanostructures. 7: 279-284. DOI: 10.1016/S1386-9477(99)00289-1  0.346
2000 Wilke I, Khazan M, Rieck CT, Kuzel P, Jaekel C, Kurz H. Time-domain Terahertz spectroscopy as a diagnostic tool for the electrodynamic properties of high temperature superconductors Physica C-Superconductivity and Its Applications. 341: 2271-2272. DOI: 10.1016/S0921-4534(00)00981-3  0.312
2000 Bobek T, Stein J, Dekorsy T, Kurz H. Sensitivity of SHG-measurements on oxide deposition process parameters Thin Solid Films. 364: 95-97. DOI: 10.1016/S0040-6090(99)00899-8  0.338
2000 Cremer R, Witthaut M, Neuschütz D, Trappe C, Laurenzis M, Winkler O, Kurz H. Deposition and characterization of metastable Cu3N layers for applications in optical data storage Mikrochimica Acta. 133: 299-302. DOI: 10.1007/S006040070109  0.328
1999 Bartels A, Dekorsy T, Kurz H. Femtosecond Ti:sapphire ring laser with a 2-GHz repetition rate and its application in time-resolved spectroscopy. Optics Letters. 24: 996-8. PMID 18073921 DOI: 10.1364/Ol.24.000996  0.312
1999 Koester T, Goldschmidtboeing F, Hadam B, Stein J, Altmeyer S, Spangenberg B, Kurz H, Neumann R, Brunner K, Abstreiter G. Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material Japanese Journal of Applied Physics. 38: 465-468. DOI: 10.1143/Jjap.38.465  0.351
1999 Bartels A, Dekorsy T, Kurz H, Köhler K. Coherent zone-folded longitudinal acoustic phonons in semiconductor superlattices : excitation and detection Physical Review Letters. 82: 1044-1047. DOI: 10.1103/Physrevlett.82.1044  0.302
1999 Sekine N, Yamanaka K, Hirakawa K, Voßebürger M, Haring-Bolivar P, Kurz H. Observation of terahertz radiation from higher-order two-dimensional plasmon modes in GaAs/AlGaAs single quantum wells Applied Physics Letters. 74: 1006-1008. DOI: 10.1063/1.123437  0.309
1999 Bartels A, Dekorsy T, Kurz H, Köhler K. Coherent acoustic phonons in GaAs/AlAs superlattices Physica B-Condensed Matter. 263: 45-47. DOI: 10.1016/S0921-4526(98)01192-2  0.316
1999 Sekine N, Hirakawa K, Vossebuerger M, Haring-Bolivar P, Kurz H. Excitation process of two-dimensional plasmons excited by femtosecond laser pulses Microelectronic Engineering. 47: 289-292. DOI: 10.1016/S0167-9317(99)00216-6  0.365
1999 Bolivar PH, Dekorsy T, Kurz H. Chapter 4 Optically Excited Bloch Oscillations—Fundamentals and Application Perspectives Semiconductors and Semimetals. 66: 187-217. DOI: 10.1016/S0080-8784(08)60207-0  0.363
1999 Wolter F, Martini R, Tolk S, Haring Bolivar P, Kurz H, Hey R, Grahn H. Influence of carrier–carrier scattering on intraband dephasing Superlattices and Microstructures. 26: 93-102. DOI: 10.1006/Spmi.1999.0763  0.561
1999 Först M, Cho GC, Dekorsy T, Kurz H. Chirped Bloch oscillations in strain-balanced InGaAs/InGaAs superlattices Superlattices and Microstructures. 26: 83-92. DOI: 10.1006/Spmi.1999.0762  0.336
1999 Dekorsy T, Bartels A, Kurz H, Mizoguchi K, Nakayama M, Kohler K. Coherent Acoustic Phonons in Semiconductor Superlattices Physica Status Solidi B-Basic Solid State Physics. 215: 425-430. DOI: 10.1002/(Sici)1521-3951(199909)215:1<425::Aid-Pssb425>3.0.Co;2-O  0.325
1998 Vossebürger M, Brucherseifer M, Cho GC, Roskos HG, Kurz H. Propagation effects in electro-optic sampling of terahertz pulses in GaAs. Applied Optics. 37: 3368-71. PMID 18273296 DOI: 10.1364/Ao.37.003368  0.335
1998 Roskos HG, Pfeifer T, Heiliger H-, Löffler T, Kurz H. Optical Probing of Ultrafast Devices Materials Science Forum. 59-66. DOI: 10.4028/Www.Scientific.Net/Msf.297-298.59  0.302
1998 Bakker HJ, Cho GC, Kurz H, Wu Q, Zhang XC. Distortion of terahertz pulses in electro-optic sampling Journal of the Optical Society of America B: Optical Physics. 15: 1795-1801. DOI: 10.1364/Josab.15.001795  0.531
1998 Dekorsy T, Cho GC, Kurz H. Coherent Phonons in Semiconductors and Semiconductor Heterostructures Journal of Nonlinear Optical Physics & Materials. 7: 201-213. DOI: 10.1142/S021886359800017X  0.369
1998 Koester T, Goldschmidtboeing F, Hadam B, Stein J, Altmeyer S, Spangenberg B, Kurz H, Neumann R, Brunner K, Abstreiter G. Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films Journal of Vacuum Science & Technology B. 16: 3804-3807. DOI: 10.1116/1.590412  0.358
1998 Hu S, Hamidi A, Altmeyer S, Köster T, Spangenberg B, Kurz H. Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography Journal of Vacuum Science & Technology B. 16: 2822-2824. DOI: 10.1116/1.590277  0.301
1998 Pfeifer T, Loffler T, Roskos HG, Kurz H, Singer M, Biebl EM. Electro-optic near-field mapping of planar resonators Ieee Transactions On Antennas and Propagation. 46: 284-291. DOI: 10.1109/8.660974  0.32
1998 Bakker H, Hunsche S, Kurz H. Coherent phonon polaritons as probes of anharmonic phonons in ferroelectrics Reviews of Modern Physics. 70: 523-536. DOI: 10.1103/Revmodphys.70.523  0.331
1998 Lüpke G, Busch O, Meyer C, Kurz H, Brandt O, Yang H, Trampert A, Ploog KH, Lucovsky G. Interface electronic transition observed by optical second-harmonic spectroscopy in β − G a N / G a A s ( 001 ) heterostructures Physical Review B. 57: 3722-3725. DOI: 10.1103/Physrevb.57.3722  0.34
1998 Dekorsy T, Segschneider G, Kim AMT, Hunsche S, Kurz H. Nonlinear optics in semiconductors and multiple quantum wells Pure and Applied Optics (Print Edition) (United Kingdom). 7: 313-318. DOI: 10.1088/0963-9659/7/2/020  0.381
1998 Bartels A, Dekorsy T, Kurz H, Köhler K. Coherent control of acoustic phonons in semiconductor superlattices Applied Physics Letters. 72: 2844-2846. DOI: 10.1063/1.121476  0.314
1998 Nagel M, Meyer C, Heiliger H, Dekorsy T, Kurz H, Hey R, Ploog K. Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene Applied Physics Letters. 72: 1018-1020. DOI: 10.1063/1.120952  0.378
1998 Köster T, Hadam B, Goldschmidtböing F, Hofmann K, Gondermann J, Stein J, Hu S, Altmeyer S, Spangenberg B, Kurz H. MOS-compatible fabrication and characterization of tunnel junctions in BESOI-material Microelectronic Engineering. 41: 531-534. DOI: 10.1016/S0167-9317(98)00124-5  0.351
1998 Hollkott J, Kahlmann F, Jaekel C, Hu S, Spangenberg B, Kurz H. Sub-100 nm lithography and high aspect-ratio masks for fabrication of Josephson devices by ion implantation Microelectronic Engineering. 41: 403-406. DOI: 10.1016/S0167-9317(98)00093-8  0.301
1998 Mikkelsen H, Hunderi O, Dekorsy T, Hunsche S, Kurz H. Coupling of exciton states in superlattice and bulk GaAs optoelectronic modulators, studied by density matrix models and optical modulation spectroscopy Superlattices and Microstructures. 23: 191-194. DOI: 10.1006/Spmi.1996.0374  0.364
1998 Bakker HJ, Dekorsy T, Cho GC, Kurz H, Leisching P, Köhler H. Coherent dynamics of continuum and excitonic states in quantum confined systems Physica Status Solidi (B) Basic Research. 206: 443-453. DOI: 10.1002/(Sici)1521-3951(199803)206:1<443::Aid-Pssb443>3.0.Co;2-X  0.493
1998 Bakker HJ, Hunsche S, Kurz H. Coherent phonon polaritons as probes of anharmonic phonons in ferroelectrics Reviews of Modern Physics. 70: 523-536.  0.457
1998 Cho GC, Bakker HJ, Kurz H. THz pulse distortion in electro-optic detection by phonon-polariton propagation Conference On Lasers and Electro-Optics Europe - Technical Digest. 60-61.  0.467
1997 Köster T, Hadam B, Hofmann K, Gondermann J, Stein J, Hu S, Altmeyer S, Spangenberg B, Kurz H. Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material Journal of Vacuum Science & Technology B. 15: 2836-2839. DOI: 10.1116/1.589739  0.35
1997 Jaekel C, Roskos HG, Kurz H. Ultrafast optoelectronic switches based on high-T/sub c/ superconductors Ieee Transactions On Applied Superconductivity. 7: 3722-3725. DOI: 10.1109/77.622227  0.328
1997 Nüsse S, Haring Bolivar P, Kurz H, Klimov V, Levy F. Carrier cooling and exciton formation in GaSe Physical Review B. 56: 4578-4583. DOI: 10.1103/Physrevb.56.4578  0.365
1997 Mizoguchi K, Matsutani K, Nakashima S, Dekorsy T, Kurz H, Nakayama M. Observation Of Coherent Acoustic Phonons In Fibonacci Superlattices Physical Review B. 55: 9336-9339. DOI: 10.1103/Physrevb.55.9336  0.302
1997 Ohlhoff C, Lupke G, Meyer C, Kurz H. Static and high-frequency electric fields in silicon MOS and MS structures probed by optical second-harmonic generation Physical Review B. 55: 4596-4606. DOI: 10.1103/Physrevb.55.4596  0.325
1997 Bartels G, Cho GC, Dekorsy T, Kurz H, Stahl A, Köhler K. Coherent signature of differential transmission signals in semiconductors: Theory and experiment Physical Review B. 55: 16404-16413. DOI: 10.1103/Physrevb.55.16404  0.325
1997 Cho GC, Ziebell A, Dekorsy T, Bakker HJ, Opitz B, Kohl A, Kurz H. Time-resolved study of coherent and incoherent transport in an InGaAsP/InGaAsP superlattice electro-optic modulator Journal of Applied Physics. 82: 4400-4407. DOI: 10.1063/1.366540  0.568
1997 Altmeyer S, Hamidi A, Spangenberg B, Kurz H. 77 K single electron transistors fabricated with 0.1 μm technology Journal of Applied Physics. 81: 8118-8120. DOI: 10.1063/1.365374  0.327
1997 Segschneider G, Dekorsy T, Kurz H, Hey R, Ploog K. Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs Applied Physics Letters. 71: 2779-2781. DOI: 10.1063/1.120131  0.337
1997 Heiliger H-, Nagel M, Roskos HG, Kurz H, Schnieder F, Heinrich W, Hey R, Ploog K. Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium Applied Physics Letters. 70: 2233-2235. DOI: 10.1063/1.118849  0.327
1997 Meyer C, Lüpke G, Kamienski ESv, Gölz A, Kurz H. Nonlinear optical mapping of 3C-inclusions in 6H-SiC-epilayers Diamond and Related Materials. 6: 1374-1377. DOI: 10.1016/S0925-9635(97)00097-6  0.311
1997 Kamienski EGSv, Leonhard C, Scharnholz S, Gölz A, Kurz H. Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC Diamond and Related Materials. 6: 1497-1499. DOI: 10.1016/S0925-9635(97)00049-6  0.303
1997 Debey D, Bluhm R, Habets N, Kurz H. Fabrication of planar thermocouples for real-time measurements of temperature profiles in polymer melts Sensors and Actuators a-Physical. 58: 179-184. DOI: 10.1016/S0924-4247(97)01389-7  0.303
1997 Lucovsky G, Banerjee A, Niimi H, Koh K, Hinds B, Meyer C, Lüpke G, Kurz H. Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C Applied Surface Science. 202-206. DOI: 10.1016/S0169-4332(97)80079-7  0.313
1997 Gölz A, Scharnholz S, Kurz H. The role of oxygen and nitrogen at the interface Microelectronic Engineering. 36: 187-190. DOI: 10.1016/S0167-9317(97)00045-2  0.309
1997 Gölz A, Lucovsky G, Koh K, Wolfe D, Niimi H, Kurz H. Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces Microelectronic Engineering. 36: 73-76. DOI: 10.1016/S0167-9317(97)00018-X  0.312
1997 Gondermann J, Schiepanski J, Hadam B, Köster T, Röwer T, Stein J, Spangenberg B, Roskos H, Kurz H. New concept for ultra small N-MOSFET's Microelectronic Engineering. 35: 305-308. DOI: 10.1016/S0167-9317(96)00134-7  0.307
1997 Köster T, Stein J, Hadam B, Gondermann J, Spangenberg B, Roskos HG, Kurz H, Holzmann M, Riedinger M, Abstreiter G. Fabrication and characterisation of SiGe based in-plane-gate transistors Microelectronic Engineering. 35: 301-304. DOI: 10.1016/S0167-9317(96)00132-3  0.352
1997 Lövenich R, Victor K, Bartels G, Stahl A, Müller A, Haring-Bolivar P, Dekorsy T, Kurz H. The resonant interband contribution to the TEOS signal Solid State Communications. 101: 167-171. DOI: 10.1016/S0038-1098(96)00562-5  0.319
1997 Lü ZG, Cho GC, Lüpke G, Kurz H. Visible fs-pulses generated by dispersive frequency doubling in Lithium Triborate Optics Communications. 133: 263-267. DOI: 10.1016/S0030-4018(96)00299-4  0.308
1997 Hunsche S, Kurz H. Coherent lattice dynamics of highly photo-excited tellurium Applied Physics A. 65: 221-229. DOI: 10.1007/S003390050570  0.371
1997 Nüsse S, Haring Bolivar P, Kurz H, Klimov V, Lévy F. Femtosecond Study of Carrier Cooling and Exciton Formation in the Layered III–VI Semiconductor GaSe Physica Status Solidi (B). 204: 98-101. DOI: 10.1002/1521-3951(199711)204:1<98::Aid-Pssb98>3.0.Co;2-G  0.372
1997 Wolter F, Roskos HG, Bolivar PH, Bartels G, Kurz H, Köhler K, Grahn HT, Hey R. Influence of LO-Phonon Emission on Bloch Oscillations in Semiconductor Superlattices Physica Status Solidi B-Basic Solid State Physics. 204: 83-86. DOI: 10.1002/1521-3951(199711)204:1<83::Aid-Pssb83>3.0.Co;2-B  0.332
1996 Dekorsy T, Kim AM, Cho GC, Hunsche S, Bakker HJ, Kurz H, Chuang SL, Köhler K. Quantum Coherence of Continuum States in the Valence Band of GaAs Quantum Wells. Physical Review Letters. 77: 3045-3048. PMID 10062117 DOI: 10.1103/Physrevlett.77.3045  0.532
1996 Scheidler M, Lemmer U, Kersting R, Karg S, Riess W, Cleve B, Mahrt RF, Kurz H, Bässler H, Göbel EO, Thomas P. Monte Carlo study of picosecond exciton relaxation and dissociation in poly(phenylenevinylene). Physical Review. B, Condensed Matter. 54: 5536-5544. PMID 9986515 DOI: 10.1103/Physrevb.54.5536  0.323
1996 Cho GC, Dekorsy T, Bakker HJ, Kurz H, Kohl A, Opitz B. Bloch oscillations in In-Ga-As-P/In-Ga-As-P heterostructures observed with time-resolved transmission spectroscopy. Physical Review. B, Condensed Matter. 54: 4420-4423. PMID 9986386 DOI: 10.1103/Physrevb.54.4420  0.52
1996 Martini R, Klose G, Roskos H, Kurz H, Grahn H, Hey R. Superradiant emission from Bloch oscillations in semiconductor superlattices. Physical Review B. 54: 14325-14328. PMID 9985518 DOI: 10.1103/Physrevb.54.R14325  0.58
1996 Jaekel C, Roskos HG, Kurz H. Emission of picosecond electromagnetic pulses from optically excited superconducting bridges. Physical Review B. 54. PMID 9984406 DOI: 10.1103/Physrevb.54.R6889  0.34
1996 Dekorsy T, Auer H, Bakker HJ, Roskos HG, Kurz H. THz electromagnetic emission by coherent infrared-active phonons. Physical Review. B, Condensed Matter. 53: 4005-4014. PMID 9983955 DOI: 10.1103/Physrevb.53.4005  0.566
1996 Dekorsy T, Kim AM, Cho GC, Kurz H, Kuznetsov AV, Förster A. Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures. Physical Review. B, Condensed Matter. 53: 1531-1538. PMID 9983616 DOI: 10.1103/Physrevb.53.1531  0.366
1996 Cho GC, Bakker HJ, Dekorsy T, Kurz H. Time-resolved observation of coherent phonons by the Franz-Keldysh effect. Physical Review. B, Condensed Matter. 53: 6904-6907. PMID 9982118 DOI: 10.1103/Physrevb.53.6904  0.546
1996 Trappe C, Schütze M, Lüpke G, Kurz H. Nonresonant Multiphoton Double Ionization Of Ga And As Probed By A Picosecond Double-Pulse Technique Physical Review A. 53: 4320-4325. PMID 9913404 DOI: 10.1103/Physreva.53.4320  0.304
1996 Voßebürger M, Roskos HG, Wolter F, Waschke C, Kurz H, Hirakawa K, Wilke I, Yamanaka K. Radiative decay of optically excited coherent plasmons in a two-dimensional electron gas Journal of the Optical Society of America B-Optical Physics. 13: 1045-1053. DOI: 10.1364/Josab.13.001045  0.378
1996 Leisching P, Dekorsy T, Bakker HJ, Roskos HG, Kurz H, Köhler K. Dephasing and selection rules of interband and intraband polarizations in superlattices Journal of the Optical Society of America B. 13: 1009. DOI: 10.1364/Josab.13.001009  0.539
1996 Köster T, Gondermann J, Hadam B, Spangenberg B, Schütze M, Roskos HG, Kurz H, Brunner J, Abstreiter G. Optical properties of reactive‐ion‐etched Si/Si1−xGex heterostructures Journal of Vacuum Science & Technology B. 14: 698-706. DOI: 10.1116/1.589159  0.365
1996 Gondermann J, Röwer T, Hadam B, Köster T, Stein J, Spangenberg B, Roskos H, Kurz H. A triangle‐shaped nanoscale metal–oxide–semiconductor device Journal of Vacuum Science & Technology B. 14: 4042-4045. DOI: 10.1116/1.588640  0.313
1996 Pfeifer T, Heiliger H-, Loffler T, Ohlhoff C, Meyer C, Lupke G, Roskos HG, Kurz H. Optoelectronic on-chip characterization of ultrafast electric devices: Measurement techniques and applications Ieee Journal of Selected Topics in Quantum Electronics. 2: 586-604. DOI: 10.1109/2944.571758  0.355
1996 Heiliger H‐, Vossebürger M, Roskos HG, Kurz H, Hey R, Ploog K. Application of liftoff low‐temperature‐grown GaAs on transparent substrates for THz signal generation Applied Physics Letters. 69: 2903-2905. DOI: 10.1063/1.117357  0.326
1996 Meyer C, Lüpke G, Kamienski ESv, Gölz A, Kurz H. Nonlinear Optical Mapping Of Silicon Carbide Polytypes In 6H-Sic Epilayers Applied Physics Letters. 69: 2243-2245. DOI: 10.1063/1.117141  0.315
1996 Kim AMT, Hunsche S, Dekorsy T, Kurz H, Köhler K. Time-resolved study of intervalence band thermalization in a GaAs quantum well Applied Physics Letters. 68: 2956-2958. DOI: 10.1063/1.116367  0.34
1996 Ohlhoff C, Meyer C, Lüpke G, Löffler T, Pfeifer T, Roskos HG, Kurz H. Optical Second-Harmonic Probe For Silicon Millimeter-Wave Circuits Applied Physics Letters. 68: 1699-1701. DOI: 10.1063/1.115910  0.326
1996 Pfeifer T, Loffler T, Roskos HG, Kurz H, Singer M, Biebl EM. Electro-optic measurement of the electric near-field distribution of 7 GHz planar resonator Electronics Letters. 32: 1305-1307. DOI: 10.1049/El:19960881  0.328
1996 Dekorsy T, Auer H, Waschke C, Bakker HJ, Roskos HG, Kurz H. THz-wave emission by coherent optical phonons Physica B-Condensed Matter. 219: 775-777. DOI: 10.1016/0921-4526(95)00882-9  0.555
1996 Heiliger H-, Pfeifer T, Roskos HG, Kurz H. External photoconductive switches as generators and detectors of picosecond electric transients Microelectronic Engineering. 31: 415-426. DOI: 10.1016/0167-9317(95)00364-9  0.323
1996 Löffler T, Pfeifer T, Roskos HG, Kurz H, Weide DWvd. Stable optoelectronic detection of free-running microwave signals with 150-GHz bandwidth Microelectronic Engineering. 31: 397-408. DOI: 10.1016/0167-9317(95)00362-2  0.343
1996 Pfeifer T, Heiliger H-, Löffler T, Roskos HG, Kurz H. Picosecond optoelectronic on-wafer characterization of coplanar waveguides on high-resistivity Si and Si/SiO 2 substrates Microelectronic Engineering. 31: 385-395. DOI: 10.1016/0167-9317(95)00361-4  0.381
1996 Barth R, Hamidi AH, Hadam B, Holkott J, Dunkmann D, Auge J, Kurz H. Electron beam lithography and ion implantation techniques for fabrication of high-T c Josephson junctions Microelectronic Engineering. 30: 407-410. DOI: 10.1016/0167-9317(95)00274-X  0.3
1996 Altmeyer S, Spangenberg B, Kühnel F, Kurz H. Step edge cut off: a new fabrication process for metal-based single electron devices Microelectronic Engineering. 30: 399-402. DOI: 10.1016/0167-9317(95)00272-3  0.325
1996 Köster T, Hadam B, Gondermann J, Spangenberg B, Roskos HG, Kurz H, Brunner J, Abstreiter G. Investigation of Si/SiGe heterostructures patterned by reactive ion etching Microelectronic Engineering. 30: 341-344. DOI: 10.1016/0167-9317(95)00259-6  0.378
1996 Barth R, Siewert J, Spangenberg B, Jaekel C, Kurz H, Utz B, Prusseit W, Kinder H, Wolf H. Silicon micromachining technique for fabricating high temperature superconducting microbolometers Vacuum. 47: 1129-1132. DOI: 10.1016/0042-207X(96)00141-8  0.307
1996 Hirakawa K, Wilke I, Yamanaka K, Roskos HG, Voßbürger M, Wolter F, Waschke C, Kurz H, Grayson M, Tsui DC. Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGa/AsGaAs heterojunctions Surface Science. 368-371. DOI: 10.1016/0039-6028(96)00423-2  0.339
1996 Dekorsy T, Ott R, Leisching P, Bakker H, Waschke C, Roskos H, Kurz H, Köhler K. Time-resolved optical investigations of bloch oscillations in semiconductor superlattices Solid-State Electronics. 40: 551-554. DOI: 10.1016/0038-1101(95)00288-X  0.566
1996 Leisching P, Beck W, Kurz H, Köhler K, Schäfer W, Leo K. Nonlinear optical studies of Bloch oscillations Solid-State Electronics. 40: 545-549. DOI: 10.1016/0038-1101(95)00287-1  0.486
1996 Hunsche S, Dekorsy T, Klimov V, Kurz H. Ultrafast dynamics of carrier-induced absorption changes in highly-excited CdSe nanocrystals Applied Physics B. 62: 3-10. DOI: 10.1007/Bf01081240  0.348
1996 Klimov VI, Haring-Bolivar P, Kurz H, Karavanskii VA. Optical nonlinearities and carrier trapping dynamics in CdS and CuxS nanocrystals Superlattices and Microstructures. 20: 395-404. DOI: 10.1006/Spmi.1996.0095  0.314
1996 Schütze M, Trappe C, Tabellion M, Lüpke G, Kurz H. All-optical mass spectrometric system based on picosecond laser pulses Surface and Interface Analysis. 24: 399-404. DOI: 10.1002/(Sici)1096-9918(199606)24:6<399::Aid-Sia134>3.0.Co;2-N  0.315
1995 Lüpke G, Meyer C, Ohlhoff C, Kurz H, Lehmann S, Marowsky G. Optical second-harmonic generation as a probe of electric-field-induced perturbation of centrosymmetric media. Optics Letters. 20: 1997-1999. PMID 19862229 DOI: 10.1364/Ol.20.001997  0.324
1995 Hunsche S, Wienecke K, Dekorsy T, Kurz H. Impulsive Softening of Coherent Phonons in Tellurium. Physical Review Letters. 75: 1815-1818. PMID 10060398 DOI: 10.1103/Physrevlett.75.1815  0.36
1995 Leisching P, Ott R, Bolivar PH, Dekorsy T, Bakker HJ, Roskos HG, Kurz H, Köhler K. External-field-induced electric dipole moment of biexcitons in a semiconductor. Physical Review. B, Condensed Matter. 52: 16993-16996. PMID 9981113 DOI: 10.1103/Physrevb.52.R16993  0.524
1995 Leisching P, Dekorsy T, Bakker HJ, Kurz H, Köhler K. Exceptionally slow dephasing of electronic continuum states in a semiconductor. Physical Review. B, Condensed Matter. 51: 18015-18018. PMID 9978844 DOI: 10.1103/Physrevb.51.18015  0.522
1995 Dekorsy T, Ott R, Kurz H, Köhler K. Bloch Oscillations At Room Temperature Physical Review B. 51: 17275-17278. PMID 9978755 DOI: 10.1103/Physrevb.51.17275  0.352
1995 Leisching P, Beck W, Kurz H, Schäfer W, Leo K, Köhler K. External field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing Physical Review B. 51: 7962-7965. PMID 9977400 DOI: 10.1103/Physrevb.51.7962  0.478
1995 Roskos HG, Waschke C, Victor K, Köhler K, Kurz H. Bloch oscillations in semiconductor superlattices Japanese Journal of Applied Physics. 34: 1370-1375. DOI: 10.1143/Jjap.34.1370  0.366
1995 Loffler T, Pfeifer T, Roskos HG, Kurz H. Detection of free-running electric signals up to 75 GHz using a femtosecond-pulse laser Ieee Photonics Technology Letters. 7: 1189-1191. DOI: 10.1109/68.466586  0.317
1995 Pfeifer T, Heiliger H-, Roskos HG, Kurz H. Generation and detection of picosecond electric pulses with freely positionable photoconductive probes Ieee Transactions On Microwave Theory and Techniques. 43: 2856-2862. DOI: 10.1109/22.475646  0.331
1995 Barth R, Siewert J, Jaekel C, Spangenberg B, Kurz H, Prusseit W, Utz B, Wolf H. Epitaxial YBa2Cu3O7−δ air‐bridge microbolometers on silicon substrates Journal of Applied Physics. 78: 4218-4221. DOI: 10.1063/1.360745  0.355
1995 Altmeyer S, Spangenberg B, Kurz H. A New Concept For The Design And Realization Of Metal Based Single Electron Devices : Step Edge Cut-Off Applied Physics Letters. 67: 569-571. DOI: 10.1063/1.115172  0.312
1995 Pfeifer T, Heiliger H–, Kamienski ESv, Roskos HG, Kurz H. Charge accumulation effects and microwave absorption of coplanar waveguides fabricated on high–resistivity Si with SiO2 insulation layer Applied Physics Letters. 67: 2624-2626. DOI: 10.1063/1.114316  0.362
1995 Hermanns JP, Rüders F, Kamienski ESv, Roskos HG, Kurz H, Hollricher O, Buchal C, Mantl S. Vertical silicon metal–semiconductor–metal photodetectors with buried CoSi2 contact Applied Physics Letters. 66: 866-868. DOI: 10.1063/1.113413  0.345
1995 Barth R, Siewert J, Spangenberg B, Jaekel C, Kurz H, Utz B, Prusseit W, Wolf H. High-Tc air-bridge microbolometers fabricated by silicon micromachining technique Microelectronic Engineering. 27: 499-502. DOI: 10.1016/0167-9317(94)00153-L  0.308
1995 Gondermann J, Spangenberg B, Köster T, Hadam B, Roskos HG, Kurz H, Brunner J, Schittenhelm P, Abstreiter G, Goβner H, Eisele I. Fabrication and characterization of Si/SiGe nanometer structures Microelectronic Engineering. 27: 83-86. DOI: 10.1016/0167-9317(94)00061-X  0.336
1995 Brunner J, Schittenhelm P, Gondermann J, Spangenberg B, Hadam B, Köster T, Roskos HG, Kurz H, Gossner H, Eisele I, Abstreiter G. SiGe wires and dots grown by local epitaxy Journal of Crystal Growth. 150: 1060-1064. DOI: 10.1016/0022-0248(95)80101-H  0.317
1995 Brunner J, Jung W, Schittenhelm P, Gail M, Abstreiter G, Gonderman J, Hadam B, Koester T, Spangenberg B, Roskos HG, Kurz H, Gossner H, Eisele I. Local epitaxy of Si/SiGe wires and dots Journal of Crystal Growth. 157: 270-275. DOI: 10.1016/0022-0248(95)00325-8  0.345
1995 Leisching P, Ott R, Bolivar PH, Dekorsy T, Bakker HJ, Roskos HG, Kurz H, Köhler K. Coherent dynamics of excitonic and biexcitonic wave packets in semiconductor superlattices Il Nuovo Cimento D. 17: 1573-1578. DOI: 10.1007/Bf02457246  0.332
1995 Beck W, Leisching P, Kurz H, Schäfer W, Leo K, Köhler K. External-field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing Il Nuovo Cimento D. 17: 1355-1358. DOI: 10.1007/Bf02457209  0.478
1995 Klimov V, Hunsche S, Kurz H. Coulomb effects in femtosecond nonlinear transmission of semiconductor nanocrystals Physica Status Solidi (B). 188: 259-267. DOI: 10.1002/Pssb.2221880123  0.372
1994 Kersting R, Lemmer U, Deussen M, Bakker HJ, Mahrt RF, Kurz H, Arkhipov VI, Bässler H, Göbel EO. Ultrafast field-induced dissociation of excitons in conjugated polymers. Physical Review Letters. 73: 1440-1443. PMID 10056793 DOI: 10.1103/Physrevlett.73.1440  0.529
1994 Hunsche S, Leo K, Kurz H, Köhler K. Exciton absorption saturation by phase-space filling: Influence of carrier temperature and density. Physical Review. B, Condensed Matter. 49: 16565-16568. PMID 10010811 DOI: 10.1103/Physrevb.49.16565  0.487
1994 Hunsche S, Leo K, Kurz H, Köhler K. Femtosecond intersubband relaxation in GaAs quantum wells. Physical Review. B, Condensed Matter. 50: 5791-5794. PMID 9976941 DOI: 10.1103/Physrevb.50.5791  0.496
1994 Bakker HJ, Hunsche S, Kurz H. Investigation of anharmonic lattice vibrations with coherent phonon polaritons. Physical Review. B, Condensed Matter. 50: 914-920. PMID 9975757 DOI: 10.1103/Physrevb.50.914  0.481
1994 Klimov V, Hunsche S, Kurz H. Biexciton effects in femtosecond nonlinear transmission of semiconductor quantum dots. Physical Review. B, Condensed Matter. 50: 8110-8113. PMID 9974823 DOI: 10.1103/Physrevb.50.8110  0.354
1994 Dekorsy T, Leisching P, Köhler K, Kurz H. Electro-optic detection of Bloch oscillations. Physical Review B. 50: 8106-8109. PMID 9974822 DOI: 10.1103/Physrevb.50.8106  0.342
1994 Bakker HJ, Kurz H. Polariton effects in four-wave mixing. Physical Review. B, Condensed Matter. 50: 7805-7808. PMID 9974767 DOI: 10.1103/Physrevb.50.7805  0.502
1994 Pfeifer T, Heiliger H-, Kamienski ESv, Roskos HG, Kurz H. Fabrication and characterization of freely positionable silicon-on-sapphire photoconductive probes Journal of the Optical Society of America B-Optical Physics. 11: 2547-2552. DOI: 10.1364/Josab.11.002547  0.34
1994 Leisching P, Bolivar PH, Schwedler R, Leo K, Kurz H, Kohler K, Ganser P. Investigation of Bloch oscillations in a GaAs/AlGaAs superlattice by spectrally resolved four-wave mixing Semiconductor Science and Technology. 9: 419-421. DOI: 10.1088/0268-1242/9/5S/003  0.485
1994 Waschke C, Roskos HG, Leo K, Kurz H, Kohler K. Experimental realization of the Bloch oscillator in a semiconductor superlattice Semiconductor Science and Technology. 9: 416-418. DOI: 10.1088/0268-1242/9/5S/002  0.497
1994 Dekorsy T, Leisching P, Waschke C, Kohler K, Leo K, Roskos HG, Kurz H. Terahertz Bloch oscillations in semiconductor superlattices Semiconductor Science and Technology. 9: 1959-1964. DOI: 10.1088/0268-1242/9/11S/017  0.528
1994 Averin SV, Kamienski ESv, Roskos HG, Kersting R, Pletner J, Geelen H, Kohl A, Spangenberg B, Leo K, Kurz H, Hollricher O. Heterobarrier photodiode MSM structures with subpicosecond temporal resolution Quantum Electronics. 24: 814-818. DOI: 10.1070/Qe1994V024N09Abeh000249  0.486
1994 Schwedler R, Mikkelsen H, Wolter K, Laschet D, Hergeth J, Kurz H. InGaAs/InP multiple quantum well modulators in experiment and theory Journal De Physique Iii. 4: 2341-2359. DOI: 10.1051/Jp3:1994281  0.324
1994 Barth R, Siewert J, Spangenberg B, Jaekel C, Kurz H, Prusseit W, Kinder H. Free-standing epitaxial YBa2Cu3O7 microbolometers on silicon substrates Cryogenics. 34: 871-874. DOI: 10.1016/S0011-2275(05)80205-X  0.351
1994 Yasuda T, Bjorkman C, Ma Y, Lu Z, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces on Si(111) surfaces Microelectronic Engineering. 25: 217-222. DOI: 10.1016/0167-9317(94)90018-3  0.468
1994 Misra V, Hattangady S, Xu XL, Watkins MJ, Hornung B, Lucovsky G, Wortman JJ, Emmerichs U, Meyer C, Leo K, Kurz H. Integrated processing of stacked-gate heterostructures: plasma-assisted low temperature processing combined with rapid thermal high-temperature processing Microelectronic Engineering. 25: 209-214. DOI: 10.1016/0167-9317(94)90017-5  0.486
1994 Waschke C, Leisching P, Bolivar PH, Schwedler R, Brüggemann F, Roskos HG, Leo K, Kurz H, Köhler K. Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing Solid-State Electronics. 37: 1321-1326. DOI: 10.1016/0038-1101(94)90417-0  0.499
1994 Hunsche S, Heesel H, Kurz H. Influence of reflectivity on femtosecond transmission spectroscopy of thin GaAs films Optics Communications. 109: 258-264. DOI: 10.1016/0030-4018(94)90690-4  0.336
1994 Emmerichs U, Bakker H, Kurz H. Generation of high-repetition rate femtosecond pulses tunable in the mid-infrared Optics Communications. 111: 497-501. DOI: 10.1016/0030-4018(94)90526-6  0.501
1994 Mahrt RF, Lemmer U, Greiner A, Wada Y, Bässler H, Göbel EO, Kersting R, Leo K, Kurz H. Time resolved luminescence spectroscopy of conjugated polymers Journal of Luminescence. 60: 479-481. DOI: 10.1016/0022-2313(94)90196-1  0.423
1994 Kersting R, Schwedler R, Kohl A, Leo K, Kurz H. Ultrafast carrier dynamics in In1?x Ga x As/InP heterostructures Optical and Quantum Electronics. 26: S705-S718. DOI: 10.1007/Bf00326657  0.507
1994 Roskos HG, Waschke C, Schwedler R, Leisching P, Dhaibi Y, Kurz H, Köhler K. Bloch oscillations in GaAs/AlGaAs superlattices after excitation well above the bandgap Superlattices and Microstructures. 15: 281-281. DOI: 10.1006/Spmi.1994.1054  0.341
1994 Schwedler R, Brüggemann F, Ziebell A, Opitz B, Kohl A, Kurz H. Valence band structure of fractional Wannier-Stark effect shallow InGaAs/InGaAs superlattices Superlattices and Microstructures. 15: 145-149. DOI: 10.1006/Spmi.1994.1029  0.338
1994 Dekorsy T, Leisching P, Beck W, Ott R, Dhaibi Y, Schwedler R, Roskos HG, Kurz H, Köhler K. Internal field dynamics of coherent bloch oscillations in superlattices Superlattices and Microstructures. 15: 11. DOI: 10.1006/Spmi.1994.1003  0.333
1993 Waschke C, Roskos HG, Schwedler R, Leo K, Kurz H, Köhler K. Coherent submillimeter-wave emission from Bloch oscillations in a semiconductor superlattice. Physical Review Letters. 70: 3319-3322. PMID 10053838 DOI: 10.1103/Physrevlett.70.3319  0.489
1993 Hunsche S, Heesel H, Ewertz A, Kurz H, Collet JH. Spectral-hole burning and carrier thermalization in GaAs at room temperature. Physical Review. B, Condensed Matter. 48: 17818-17826. PMID 10008412 DOI: 10.1103/Physrevb.48.17818  0.342
1993 Dekorsy T, Pfeifer T, Kütt W, Kurz H. Subpicosecond carrier transport in GaAs surface-space-charge fields. Physical Review B. 47: 3842-3849. PMID 10006492 DOI: 10.1103/Physrevb.47.3842  0.357
1993 Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Transport properties of optically generated free carriers in hydrogenated amorphous silicon in the femtosecond time regime. Physical Review. B, Condensed Matter. 47: 3593-3597. PMID 10006458 DOI: 10.1103/Physrevb.47.3593  0.38
1993 Heesel H, Hunsche S, Mikkelsen H, Dekorsy T, Leo K, Kurz H. Dynamics of electric field screening in a bulk GaAs modulator. Physical Review. B, Condensed Matter. 47: 16000-16003. PMID 10006011 DOI: 10.1103/Physrevb.47.16000  0.491
1993 Hohenester U, Supancic P, Kocevar P, Zhou XQ, Kütt W, Kurz H. Subpicosecond thermalization and relaxation of highly photoexcited electrons and holes in intrinsic and p-type GaAs and InP. Physical Review B. 47: 13233-13245. PMID 10005628 DOI: 10.1103/Physrevb.47.13233  0.365
1993 Bjorkman CH, Yasuda T, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Second-Harmonic Generation: A New Technique for Probing Chemical Bonding on Vicinal Si(III) Surfaces The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.S-Iii-2  0.438
1993 Yasuda T, Lee DR, Bjorkman CH, Ma Y, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. A Low-Temperature Process for Device Quality Si/SiO2 Interfaces on Si(111) Mrs Proceedings. 315. DOI: 10.1557/Proc-315-375  0.457
1993 Dekorsky T, Kütt W, Pfeifer T, Kurz H. Coherent control of LO-phonon dynamics in opaque semiconductors by femtosecond laser pulses Epl. 23: 223-228. DOI: 10.1209/0295-5075/23/3/011  0.377
1993 Lucovsky G, Bjorkman CH, Yasuda T, Emmerichs U, Meyer C, Leo K, Kurz H. Thermal Relaxation Phenomena in the Formation of Device-Quality SiO2/Si Interfaces Japanese Journal of Applied Physics. 32: 6196-6199. DOI: 10.1143/Jjap.32.6196  0.48
1993 HUNSCHE S, BAKKER H, KURZ H. TIME-RESOLVED STUDY OF PHONON-POLARITONS IN LiTaO3 AT ROOM TEMPERATURE Modern Physics Letters B. 7: 797-811. DOI: 10.1142/S0217984993000783  0.499
1993 Bjorkman CH, Shearon CE, Ma Y, Yasuda T, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 964-970. DOI: 10.1116/1.578576  0.47
1993 Stephens DJ, He SS, Lucovsky G, Mikkelsen H, Leo K, Kurz H. Effects of thin film deposition rates, and process‐induced interfacial layers on the optical properties of plasma‐deposited SiO2/Si3N4 Bragg reflectors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 893-899. DOI: 10.1116/1.578323  0.503
1993 Gondermann J, Kamienski EGSv, Roskos HG, Kurz H. Al-SiO/sub 2/-Al sandwich microstrip lines for high-frequency on-chip interconnects Ieee Transactions On Microwave Theory and Techniques. 41: 2087-2091. DOI: 10.1109/22.260691  0.308
1993 Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H Journal of Applied Physics. 73: 1235-1239. DOI: 10.1063/1.353263  0.346
1993 Dekorsy T, Kurz H, Zhou XQ, Ploog K. Investigation of field, carrier, and coherent phonon dynamics in low‐temperature grown GaAs Applied Physics Letters. 63: 2899-2901. DOI: 10.1063/1.110291  0.355
1993 Kersting R, Plettner J, Leo K, Averin S, Kurz H. Time‐resolved luminescence study of ultrafast carrier transport in GaAs metal‐semiconductor‐metal devices Applied Physics Letters. 62: 732-734. DOI: 10.1063/1.108853  0.479
1993 SCHWEDLER R, BRÜGGEMANN F, OPITZ B, KOHL A, WOLTER K, LEO K, KURZ H. Observation of type-I and type-II Wannier-stark-effect in InGaAs/InGaAs superlattices Le Journal De Physique Iv. 3: 445-448. DOI: 10.1051/Jp4:1993596  0.46
1993 Schwedler R, Gallmann B, Wolter K, Kohl A, Leo K, Kurz H, Baumann F. Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy Materials Science and Engineering: B. 20: 66-68. DOI: 10.1016/0921-5107(93)90398-7  0.489
1993 Kohl A, Juillaguet S, Fraisse B, Schwedler R, Royo F, Peyre H, Bruggeman F, Wolter K, Leo K, Kurz H, Camassel J. Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices Materials Science and Engineering: B. 21: 244-248. DOI: 10.1016/0921-5107(93)90358-T  0.439
1993 Dekorsy T, Zhou X, Ploog K, Kurz H. Subpicosecond electric field dynamics in low-temperature-grown GaAs observed by reflective electro-optic sampling Materials Science and Engineering: B. 22: 68-71. DOI: 10.1016/0921-5107(93)90225-C  0.421
1993 Schwedler R, Gallmann B, Wolter K, Kohl A, Leo K, Kurz H, Juillaguet S, Massone E, Camassel J, Laurenti JP, Baumann FH. Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence Applied Surface Science. 63: 187-190. DOI: 10.1016/0169-4332(93)90087-R  0.488
1993 Langheinrich W, Spangenberg B, Barth R, Kurz H. Superconducting submicron bridges fabricated by electron beam lithography and dry etching Microelectronic Engineering. 21: 479-482. DOI: 10.1016/0167-9317(93)90115-L  0.333
1993 Zettler J-, Mikkelsen H, Trepk T, Leo K, Kurz H, Richter W. Modulated ellipsometry for characterization of multiple quantum wells and superlattices Thin Solid Films. 233: 112-116. DOI: 10.1016/0040-6090(93)90070-6  0.491
1993 Kurz H, Esser A, Heesel H, Lucovsky G, Wang C, Parsons G. Optical detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the Sub-picosecond time domain Journal of Non-Crystalline Solids. 575-578. DOI: 10.1016/0022-3093(93)90617-7  0.34
1993 Lemmer U, Rischer R, Feldmann J, Mahrt RF, Yang J, Greiner A, Bässler H, Göbel EO, Heesel H, Kurz H. Time-resolved studies of two-photon absorption processes in poly(p-phenylenevinylene)s Chemical Physics Letters. 203: 28-32. DOI: 10.1016/0009-2614(93)89304-Z  0.312
1993 Albrecht W, Kruse T, Leo K, Kurz H. Oxygen dependence of the fermi-level and electron-phonon coupling constant in YBa2Cu3Ox films Applied Physics A. 56: 463-465. DOI: 10.1007/Bf00332583  0.468
1993 Albrecht W, Kruse T, Leo K, Kurz H. Dynamics of optically excited quasiparticles in YBa2Cu3O7 Applied Physics A. 57: 203-206. DOI: 10.1007/Bf00331446  0.476
1993 Schwedler R, Br�ggemann F, Kohl A, Wolter K, Leo K, Kurz H. Type-I and type-II Wannier-Stark effect in InGaAs/InGaAs superlattices Applied Physics a Solids and Surfaces. 57: 199-201. DOI: 10.1007/Bf00331445  0.456
1993 Trappe C, Schütze M, Raff M, Hannot R, Kurz H. Use of ultrashort laser pulses for desorption from semiconductor surfaces and nonresonant post-ionization of sub-monolayers Fresenius Journal of Analytical Chemistry. 346: 368-373. DOI: 10.1007/Bf00321453  0.315
1992 Albrecht W, Kruse T, Kurz H. Time-resolved observation of coherent phonons in superconducting YBa 2 Cu 3 O 7 − δ thin films Physical Review Letters. 69: 1451-1454. PMID 10047220 DOI: 10.1103/Physrevlett.69.1451  0.336
1992 Bakker HJ, Hunsche S, Kurz H. Observation of THz phonon-polariton beats in LiTaO3. Physical Review Letters. 69: 2823-2826. PMID 10046598 DOI: 10.1103/Physrevlett.69.2823  0.542
1992 Zettler J-, Mikkelsen H, Leo K, Kurz H, Carius R, Förster A. Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well Physical Review B. 46: 15955-15962. PMID 10003736 DOI: 10.1103/Physrevb.46.15955  0.503
1992 Emmerichs U, Meyer C, Leo K, Kurz H, Bjorkman CH, Shearon CE, Ma Y, Yasuda T, Lucovsky G. Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers Mrs Proceedings. 281. DOI: 10.1557/Proc-281-815  0.463
1992 Stephens DJ, He SS, Lucovsky G, Mkkelsen H, Leo K, Kurz H. The Optical Properties of Plasma-Deposited SiO2 and Si3N4 Bragg Reflectors in the Spectral Range from 1.8 to 3.0 eV Mrs Proceedings. 281. DOI: 10.1557/Proc-281-809  0.504
1992 Scholz R, Stahl A, Zhou X, Leo K, Kurz H. Subpicosecond hot luminescence in III-V compounds Ieee Journal of Quantum Electronics. 28: 2473-2485. DOI: 10.1109/3.159554  0.477
1992 Kutt WA, Albrecht W, Kurz H. Generation of coherent phonons in condensed media Ieee Journal of Quantum Electronics. 28: 2434-2444. DOI: 10.1109/3.159550  0.396
1992 Hohenester U, Supancic P, Kocevar P, Zhou XQ, Lemmer U, Cho GC, Kutt W, Kurz H. Doping dependence of the ultrafast thermalization and relaxation of highly photoexcited carriers in bulk polar semiconductors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/043  0.366
1992 Kurz H. Femtosecond spectroscopy of hot carrier relaxation in bulk semiconductors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/029  0.387
1992 Kutt W, Cho GC, Pfeifer T, Kurz H. Subpicosecond generation and decay of coherent phonons in III-V compounds Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/018  0.35
1992 Prusseit W, Corsépius S, Zwerger M, Berberich P, Kinder H, Eibl O, Jaekel C, Breuer U, Kurz H. Epitaxial YBa2Cu3O7−δ films on silicon using combined YSZ/Y2O3 buffer layers: A comprehensive study Physica C-Superconductivity and Its Applications. 201: 249-256. DOI: 10.1016/0921-4534(92)90470-W  0.302
1992 Esser A, Maidorn G, Kurz H. Photoinduced transient reflectance investigation of process-induced near-surface defects in silicon Applied Surface Science. 54: 482-489. DOI: 10.1016/0169-4332(92)90091-B  0.333
1992 Schwedler R, Gallman B, Wolter K, Kohl A, Leo K, Kurz H, Juillaguet S, Camassel J, Laurenti J, Baumann F. Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE Microelectronic Engineering. 19: 891-894. DOI: 10.1016/0167-9317(92)90566-A  0.344
1992 Pfeifer T, Dekorsy T, Kütt W, Kurz H. Generation mechanism for coherent LO phonons in surface-space-charge fields of III-V-compounds Applied Physics A. 55: 482-488. DOI: 10.1007/Bf00348337  0.344
1992 Kersting R, Kohl A, Voss T, Leo K, Kurz H. Ultrafast carrier dynamics in strained In1?xGaxAs/InP heterostructures Applied Physics a Solids and Surfaces. 55: 596-598. DOI: 10.1007/Bf00331679  0.467
1991 Esser A, Heesel H, Kurz H, Wang C, Williams MJ, Lucovsky G. The role of dangling bond states in the picosecond recovery of photoinduced absorption in a-Si:H Journal of Non-Crystalline Solids. 535-538. DOI: 10.1016/S0022-3093(05)80173-5  0.312
1991 Kütt W, Cho GC, Strahnen M, Kurz H. Electro-optic sampling of surface space-charge fields on III–V compounds Applied Surface Science. 50: 325-329. DOI: 10.1016/0169-4332(91)90192-M  0.354
1991 Albrecht TF, Seibert K, Kurz H. Chirp measurement of large-bandwidth femtosecond optical pulses using two-photon absorption Optics Communications. 84: 223-227. DOI: 10.1016/0030-4018(91)90076-P  0.303
1990 Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN, Lucovsky G, Nemanich RJ. Ultrafast recombination and trapping in amorphous silicon. Physical Review. B, Condensed Matter. 41: 2879-2884. PMID 9994054 DOI: 10.1016/0022-3093(89)90654-6  0.331
1990 Laurenti JP, Camassel J, Reynes B, Grutzmacher D, Wolter K, Kurz H. Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE Semiconductor Science and Technology. 5: 222-228. DOI: 10.1088/0268-1242/5/3/007  0.349
1990 Kersting R, Zhou XQ, Wolter K, Grützmacher D, Kurz H. Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wells Superlattices and Microstructures. 7: 345-348. DOI: 10.1016/0749-6036(90)90223-T  0.308
1990 Esser A, Kütt W, Strahnen M, Maidorn G, Kurz H. Femtosecond transient reflectivity measurements as a probe for process-induced defects in silicon Applied Surface Science. 46: 446-450. DOI: 10.1016/0169-4332(90)90187-5  0.303
1990 Breuer U, Albrecht W, Kurz H. SNMS studies of high temperature superconductor films on silicon Journal of the Less Common Metals. 1164-1171. DOI: 10.1016/0022-5088(90)90532-O  0.321
1990 Klocke V, Pfau A, Albrecht W, Valder C, Breuer U, Kurz H, Fleuster M, Güntherodt G. Electron-beam evaporation and interface characterization of Bi2Sr2Ca1Cu2Oy thin films on SrTiO3- and Si-substrates Journal of the Less-Common Metals. 164: 671-678. DOI: 10.1016/0022-5088(90)90275-O  0.311
1989 Zhou XQ, Cho GC, Lemmer U, Kütt W, Wolter K, Kurz H. Hot carrier relaxation in InP and GaAs on a subpicosecond time scale Solid-State Electronics. 32: 1591-1595. DOI: 10.1016/0038-1101(89)90279-7  0.359
1989 Davidson BN, Lucovsky G, Parsons GN, Nemanich RJ, Esser A, Seibert K, Kurz H. Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant Journal of Non-Crystalline Solids. 114: 579-581. DOI: 10.1016/0022-3093(89)90656-X  0.367
1988 Kurz H, Kuett W, Seibert K, Strahnen M. Hot carrier relaxation in highly excited III–V compounds Solid-State Electronics. 31: 447-450. DOI: 10.1016/0038-1101(88)90315-2  0.33
1985 Malvezzi AM, Kurz H, Bloembergen N. Nonlinear photoemission from picosecond irradiated silicon Applied Physics a Solids and Surfaces. 36: 143-146. DOI: 10.1007/BF00624934  0.455
1984 Lompré LA, Liu JM, Kurz H, Bloembergen N. Optical heating of electron-hole plasma in silicon by picosecond pulses Applied Physics Letters. 44: 3-5. DOI: 10.1063/1.94543  0.496
1984 Liu JM, Lompre LA, Kurz H, Bloembergen N. Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layers Applied Physics a Solids and Surfaces. 34: 25-29. DOI: 10.1007/BF00617570  0.449
1983 Lompré LA, Liu JM, Kurz H, Bloembergen N. Time-resolved temperature measurement of picosecond laser irradiated silicon Applied Physics Letters. 43: 168-170. DOI: 10.1063/1.94268  0.483
1983 Kurz H, Liu JM, Bloembergen N. Pulsed laser annealing of semiconductors experimental facts and open questions Physica B+C. 117: 1010-1013. DOI: 10.1016/0378-4363(83)90722-2  0.465
1982 Liu JM, Kurz H, Bloembergen N. Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in silicon Applied Physics Letters. 41: 643-646. DOI: 10.1063/1.93611  0.471
1982 Yen R, Liu JM, Kurz H, Bloembergen N. Space-time resolved reflectivity measurements of picosecond laser-pulse induced phase transitions in (111) silicon surface layers Applied Physics a Solids and Surfaces. 27: 153-160. DOI: 10.1007/BF00616666  0.492
1981 Liu JM, Yen R, Kurz H, Bloembergen N. Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses Applied Physics Letters. 39: 755-757. DOI: 10.1063/1.92843  0.465
Show low-probability matches.