| Year |
Citation |
Score |
| 2019 |
Wang X, Bar-Yam Y, Adler D, Joannopoulos JD. dc conductivity and the Meyer-Neldel rule in a-Si:H. Physical Review. B, Condensed Matter. 38: 1601-1604. PMID 9946439 DOI: 10.1103/Physrevb.38.1601 |
0.311 |
|
| 1988 |
Branz HM, Silver M, Adler D. Sweep-out experiments: A new spectroscopy for the electronic density of states in doped semiconductors Philosophical Magazine Part B. 57: 271-282. DOI: 10.1080/13642818808201620 |
0.405 |
|
| 1988 |
Lo CF, Johnson KH, Adler D. Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method Journal of Non-Crystalline Solids. 99: 97-103. DOI: 10.1016/0022-3093(88)90461-9 |
0.352 |
|
| 1988 |
Hsiaw HC, Johnson KH, Lo CF, Adler D. Valence and conduction band molecular-orbital topologies and the optical and electrical properties of gallium arsenide and silicon Journal of Non-Crystalline Solids. 105: 101-106. DOI: 10.1016/0022-3093(88)90343-2 |
0.384 |
|
| 1987 |
Branz HM, Capuder K, Lyons EH, Haggerty JS, Adler D. Conductivity and quenched-in defects in hydrogenated amorphous silicon. Physical Review. B, Condensed Matter. 36: 7934-7940. PMID 9942590 DOI: 10.1103/Physrevb.36.7934 |
0.377 |
|
| 1987 |
Bar-Yam Y, Adler D, Joannopoulos JD. Electronic States in Amorphous Solids, Liquids, and Alloys Mrs Proceedings. 95: 3. DOI: 10.1557/Proc-95-3 |
0.334 |
|
| 1987 |
Tokuda KL, Adler D, Reif R. Preparation and Properties of Hydrogenated Amorphous Silicon Produced by Plasma-Enhanced Chemical Vapor Decomposition of Silane Mrs Proceedings. 95: 255. DOI: 10.1557/Proc-95-255 |
0.328 |
|
| 1987 |
Silver M, Branz HM, Adler D. Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films Mrs Proceedings. 95. DOI: 10.1557/Proc-95-107 |
0.384 |
|
| 1987 |
Adler D, Silver M. Microscopic mobility in hydrogenated amorphous silicon Philosophical Magazine Letters. 56: 113-119. DOI: 10.1080/09500838708205259 |
0.377 |
|
| 1987 |
Branz HM, Flint JH, Harris CJ, Haggerty JS, Adler D. Incorporation of boron during thermal chemical vapor deposition of doped hydrogenated amorphous silicon Applied Physics Letters. 51: 922-924. DOI: 10.1063/1.98802 |
0.378 |
|
| 1987 |
Silver M, Winborne G, Adler D, Cannella V. Electron mobility in hydrogenated amorphous silicon under single and double injection Applied Physics Letters. 50: 983-985. DOI: 10.1063/1.98005 |
0.376 |
|
| 1987 |
Meunier M, Flint JH, Haggerty JS, Adler D. Laser‐induced chemical vapor deposition of hydrogenated amorphous silicon. II. Film properties Journal of Applied Physics. 62: 2822-2829. DOI: 10.1063/1.339413 |
0.573 |
|
| 1987 |
Meunier M, Flint JH, Haggerty JS, Adler D. Laser‐induced chemical vapor deposition of hydrogenated amorphous silicon. I. Gas‐phase process model Journal of Applied Physics. 62: 2812-2821. DOI: 10.1063/1.339412 |
0.538 |
|
| 1987 |
Pan ET‐, Flint JH, Adler D, Haggerty JS. Laser‐induced chemical vapor deposition of silicon nitride films: Film and process characterizations Journal of Applied Physics. 61: 4535-4539. DOI: 10.1063/1.338414 |
0.363 |
|
| 1987 |
Adler D. Electronic structure of hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 90: 77-89. DOI: 10.1016/S0022-3093(87)80388-5 |
0.417 |
|
| 1987 |
Adler D. Theoretical investigations of the light-induced effects in hydrogenated amorphous silicon Solar Cells. 21: 439-448. DOI: 10.1016/0379-6787(87)90142-6 |
0.366 |
|
| 1987 |
Branz H, Liem L, Harris C, Fan S, Flint J, Adler D, Haggerty J. Laser-induced chemical vapor deposition of hydrogenated amorphous silicon: Photovoltaic devices and material properties Solar Cells. 21: 177-188. DOI: 10.1016/0379-6787(87)90117-7 |
0.412 |
|
| 1987 |
Flint JH, Branz HM, Harris CJ, Haggerty JS, Adler D. Boron incorporation in hydrogenated amorphous silicon films prepared by chemical vapor deposition Journal of Non-Crystalline Solids. 1419-1422. DOI: 10.1016/0022-3093(87)90340-1 |
0.357 |
|
| 1987 |
Branz HM, Adler D, Silver M. Theory of sweep-out experiments: a new spectroscopy for the electronic density of states in doped hydrogenated amorphous silicon films Journal of Non-Crystalline Solids. 655-658. DOI: 10.1016/0022-3093(87)90154-2 |
0.382 |
|
| 1986 |
He YJ, Hasegawa M, Lee R, Berko S, Adler D, Jung AL. Positron-annihilation study of voids in a-Si and a-Si:H. Physical Review. B, Condensed Matter. 33: 5924-5927. PMID 9939129 DOI: 10.1103/Physrevb.33.5924 |
0.375 |
|
| 1986 |
Silver M, Adler D, Shaw MP, Cannella V, McGill J. Electronic Transport in Hydrogenated Amorphous Silicon Mrs Proceedings. 70: 119. DOI: 10.1557/Proc-70-119 |
0.409 |
|
| 1986 |
Adler D, Silver M, Shaw MP, Cannella V. Inadequacy of the Conventional View of Hydrogenated Amorphous Silicon Mrs Proceedings. 70: 113. DOI: 10.1557/Proc-70-113 |
0.348 |
|
| 1986 |
Silver M, Adler D, Shaw MP, Cannella V. Transport and the electronic structure of hydrogenated amorphous silicon Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 53: 89-95. DOI: 10.1080/01418638608244285 |
0.391 |
|
| 1986 |
Branz HM, Fan S, Flint JH, Fiske BT, Adler D, Haggerty JS. Doped hydrogenated amorphous silicon films by laser‐induced chemical vapor deposition Applied Physics Letters. 48: 171-173. DOI: 10.1063/1.96933 |
0.398 |
|
| 1986 |
Khan BA, Adler D, Senturia SD. Transient field-effect and time-of-flight investigation of chalcogenide glasses Journal of Applied Physics. 60: 2875-2881. DOI: 10.1063/1.337072 |
0.365 |
|
| 1986 |
Silver M, Snow E, Adler D. Transient electronic response in hydrogenated amorphous silicon Journal of Applied Physics. 59: 3503-3507. DOI: 10.1063/1.336821 |
0.427 |
|
| 1986 |
Eberhart ME, Johnson KH, Adler D, O'Handley RC. Cluster molecular orbital models of melting and the amorphous state Journal of Non-Crystalline Solids. 83: 12-26. DOI: 10.1016/0022-3093(86)90052-9 |
0.304 |
|
| 1985 |
Silver M, Snow E, Adler D. Calculation of the extended-state electron mobility in hydrogenated amorphous silicon Solid State Communications. 54: 15-17. DOI: 10.1016/0038-1098(85)91023-3 |
0.382 |
|
| 1985 |
Silver M, Snow E, Adler D. Transient photodecay measurements as a probe of the density of localized states in amorphous semiconductors Solid State Communications. 53: 637-640. DOI: 10.1016/0038-1098(85)90366-7 |
0.349 |
|
| 1985 |
Adler D, Schwartz BB, Steele MC. Physical properties of amorphous materials Materials Science and Engineering. 96: 325. DOI: 10.1016/0025-5416(87)90567-2 |
0.405 |
|
| 1985 |
Silver M, Snow E, Adler D. Validity of the thermalization approximation in amorphous semiconductors Journal of Non-Crystalline Solids. 455-458. DOI: 10.1016/0022-3093(85)90696-9 |
0.362 |
|
| 1985 |
Jung A, Shi L, Liu G, Xiong J, Cao BS, Yu W, Jiang H, Song J, Long K, Adler D. Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 221-224. DOI: 10.1016/0022-3093(85)90643-X |
0.368 |
|
| 1985 |
Shapiro FR, Adler D. Electrical conductivity and thermoelectric power in amorphous semiconductors Journal of Non-Crystalline Solids. 139-142. DOI: 10.1016/0022-3093(85)90628-3 |
0.405 |
|
| 1985 |
Zygmunt SA, Eberhart ME, Johnson KH, Adler D. Planar ring structures in hydrogenated amorphous silicon: A new model for the Staebler-Wronski effect Journal of Non-Crystalline Solids. 77: 107-110. DOI: 10.1016/0022-3093(85)90622-2 |
0.376 |
|
| 1985 |
Jung A, Wang Y, Liu G, Xiong J, Cao B, Yu W, Adler D. Defects and microvoids in a-Si and a-Si:H Journal of Non-Crystalline Solids. 74: 19-24. DOI: 10.1016/0022-3093(85)90396-5 |
0.387 |
|
| 1985 |
Zygmunt SA, Eberhart ME, Johnson KH, Adler D. Theoretical studies of aromatic silicon-based structures and their application to photostructural changes in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 75: 297-303. DOI: 10.1016/0022-3093(85)90234-0 |
0.388 |
|
| 1985 |
Shapiro FR, Adler D. Equilibrium transport in amorphous semiconductors Journal of Non-Crystalline Solids. 74: 189-194. DOI: 10.1016/0022-3093(85)90065-1 |
0.356 |
|
| 1985 |
Adler D. Chemistry and Physics of Covalent Amorphous Semiconductors Cheminform. 16: 5-103. DOI: 10.1007/978-1-4899-2260-1_2 |
0.331 |
|
| 1984 |
Adler D. Chapter 14 Defects and Density of Localized States Semiconductors and Semimetals. 21: 291-318. DOI: 10.1016/S0080-8784(08)63032-X |
0.401 |
|
| 1984 |
Silver M, Snow E, Adler D. Extended-state mobility in hydrogenated amorphous silicon Solid State Communications. 51: 581-584. DOI: 10.1016/0038-1098(84)91063-9 |
0.388 |
|
| 1984 |
Cullen P, Harbison JP, Lang DV, Adler D. A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous silicon Solid State Communications. 50: 991-994. DOI: 10.1016/0038-1098(84)90272-2 |
0.372 |
|
| 1984 |
Khan BA, Bai P, Adler D. Electronic structure of amorphous arsenic telluride Journal of Non-Crystalline Solids. 66: 321-326. DOI: 10.1016/0022-3093(84)90339-9 |
0.367 |
|
| 1984 |
Shapiro FR, Adler D. Transport in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 66: 303-308. DOI: 10.1016/0022-3093(84)90336-3 |
0.419 |
|
| 1984 |
Adler D, Eberhart ME, Johnson KH, Zygmunt SA. Metastable defects in amorphous silicon alloys Journal of Non-Crystalline Solids. 66: 273-278. DOI: 10.1016/0022-3093(84)90331-4 |
0.354 |
|
| 1984 |
Khan BA, Adler D. Chemical modification of chalcogenide glasses by lithium Journal of Non-Crystalline Solids. 64: 35-42. DOI: 10.1016/0022-3093(84)90204-7 |
0.331 |
|
| 1984 |
Yamazaki S, Shiraishi T, Adler D. Isomerization model for photo-induced effects in a-Si:H Journal of Non-Crystalline Solids. 68: 167-174. DOI: 10.1016/0022-3093(84)90001-2 |
0.414 |
|
| 1983 |
Meunier M, Flint J, Adler D, Haggerty J. A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Mrs Proceedings. 29. DOI: 10.1557/Proc-29-397 |
0.582 |
|
| 1983 |
Adler D. Origin of the photo-induced changes in hydrogenated amorphous silicon Solar Cells. 9: 133-148. DOI: 10.1016/0379-6787(83)90082-0 |
0.43 |
|
| 1983 |
Adler D, Shapiro FR. Effective correlation energy of the dangling bond in amorphous silicon Physica B-Condensed Matter. 932-934. DOI: 10.1016/0378-4363(83)90698-8 |
0.365 |
|
| 1983 |
Khan BA, Kastner MA, Adler D. Time-of-flight and photoconductivity studies of a-As2Se3 films Solid State Communications. 45: 187-189. DOI: 10.1016/0038-1098(83)90373-3 |
0.32 |
|
| 1983 |
Silver M, Snow E, Aiga M, Cannella V, Ross R, Yaniv Z, Shaw M, Adler D. Comparison of fast transient response between crystal and amorphous silicon pin photodiodes Journal of Non-Crystalline Solids. 445-448. DOI: 10.1016/0022-3093(83)90616-6 |
0.331 |
|
| 1983 |
Cullen P, Harbison JP, Lang DV, Adler D. Space charge spectroscopy of the gap states in hydrogenated amorphous silicon counterdoped with boron Journal of Non-Crystalline Solids. 261-264. DOI: 10.1016/0022-3093(83)90571-9 |
0.357 |
|
| 1983 |
Khan BA, Bai P, Jung A, Adler D. Dispersive transport in amorphous arsenic telluride Journal of Non-Crystalline Solids. 1007-1010. DOI: 10.1016/0022-3093(83)90337-X |
0.309 |
|
| 1983 |
Meunier M, Gattuso TR, Adler D, Haggerty JS. Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silane Applied Physics Letters. 43: 273-275. DOI: 10.1016/0022-3093(83)90267-3 |
0.567 |
|
| 1983 |
Jung A, Luo J, Yao X, Lin C, Yang Y, Adler D. Deep-level spectroscopy of reactively sputtered a-Si:H films Journal of Non-Crystalline Solids. 57: 241-250. DOI: 10.1016/0022-3093(83)90057-1 |
0.407 |
|
| 1982 |
Gattuso TR, Meunier M, Adler D, Haggerty JS. Ir Laser-Induced Deposition of Silicon Thin Films Mrs Proceedings. 17. DOI: 10.1557/Proc-17-215 |
0.551 |
|
| 1982 |
Eberhart ME, Johnson KH, Adler D. Theoretical models for the electronic structures of hydrogenated amorphous silicon. II. Three-center bonds Physical Review B. 26: 3138-3143. DOI: 10.1103/Physrevb.26.3138 |
0.361 |
|
| 1982 |
Silver M, Giles NC, Snow E, Shaw MP, Cannella V, Adler D. Study of the electronic structure of amorphous silicon using reverse-recovery techniques Applied Physics Letters. 41: 935-937. DOI: 10.1063/1.93341 |
0.411 |
|
| 1982 |
Silver M, Cohen L, Adler D. Multiple‐trapping dispersive transport at high temperatures Applied Physics Letters. 40: 261-263. DOI: 10.1063/1.93067 |
0.335 |
|
| 1982 |
Adler D. Electronic correlations and transient effects in disordered systems Solar Energy Materials. 8: 53-69. DOI: 10.1016/0165-1633(82)90050-8 |
0.354 |
|
| 1982 |
Adler D. Normal structural bonding and defects in covalent amorphous solids Journal of Solid State Chemistry. 45: 40-50. DOI: 10.1016/0022-4596(82)90289-4 |
0.393 |
|
| 1982 |
Gabriel MC, Adler D. Switching in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 48: 297-305. DOI: 10.1016/0022-3093(82)90167-3 |
0.412 |
|
| 1981 |
Frye RC, Adler D. Transient effects in chalcogenide glasses Physical Review Letters. 46: 1027-1030. DOI: 10.1103/Physrevlett.46.1027 |
0.348 |
|
| 1981 |
Frye RC, Adler D. Field effect in chalcogenide glasses Physical Review B. 24: 5812-5834. DOI: 10.1103/Physrevb.24.5812 |
0.362 |
|
| 1981 |
Frye RC, Adler D. Photoconductivity and negatively correlated defects Physical Review B. 24: 5485-5496. DOI: 10.1103/Physrevb.24.5485 |
0.343 |
|
| 1981 |
Silver M, Cohen L, Adler D. Dispersive transport and electronic structure of amorphous silicon alloys Physical Review B. 24: 4855-4858. DOI: 10.1103/Physrevb.24.4855 |
0.325 |
|
| 1981 |
Senturia SD, Rubinstein J, Azoury SJ, Adler D. Determination of the field effect in low-conductivity materials with the charge-flow transistor Journal of Applied Physics. 52: 3663-3670. DOI: 10.1063/1.329103 |
0.315 |
|
| 1981 |
Adler D. Defects In Amorphous Chalcogenides And Silicon Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:1981401 |
0.341 |
|
| 1981 |
Shiraishi T, Iida M, Shinohara K, Adler D. Electrical conduction mechanisms in amorphous GeTe thin films Journal of Non-Crystalline Solids. 45: 169-181. DOI: 10.1016/0022-3093(81)90185-X |
0.357 |
|
| 1981 |
Shiraishi T, Adler D. High-speed transient currents in chalcogenide glasses Journal of Non-Crystalline Solids. 46: 269-276. DOI: 10.1016/0022-3093(81)90005-3 |
0.34 |
|
| 1980 |
Mabatah AK, Yoffa EJ, Eklund PC, Dresselhaus MS, Adler D. Electrical properties of Ni1-xCoxS2 Physical Review B. 21: 1676-1689. DOI: 10.1103/Physrevb.21.1676 |
0.369 |
|
| 1980 |
Madan A, Czubatyj W, Adler D, Silver M. Carrier-generation efficiencies in a-Si : F : H-based photovoltaic devices Philosophical Magazine Part B. 42: 257-264. DOI: 10.1080/01418638008227284 |
0.342 |
|
| 1980 |
Adler D, Silver M, Madan A, Czubatyj W. Recombination mechanisms in amorphous silicon‐based alloys Journal of Applied Physics. 51: 6429-6431. DOI: 10.1063/1.327594 |
0.347 |
|
| 1980 |
Adler D. Chemistry and Physics of Amorphous Semiconductors. Journal of Chemical Education. 57: 560. DOI: 10.1021/Ed057P560 |
0.355 |
|
| 1980 |
Adler D. Theory of amorphous semiconductors Solar Cells. 2: 199-226. DOI: 10.1016/0379-6787(80)90027-7 |
0.411 |
|
| 1980 |
Frye RC, Adler D, Shaw MP. Fabrication and characterization of heterojunctions between chalcogenide glasses and III-V crystals Journal of Non-Crystalline Solids. 35: 1099-1104. DOI: 10.1016/0022-3093(80)90346-4 |
0.332 |
|
| 1980 |
Adler D. Electronic structure of amorphous semiconductors Journal of Non-Crystalline Solids. 42: 315-333. DOI: 10.1016/0022-3093(80)90033-2 |
0.403 |
|
| 1980 |
Adler D. Chemistry and physics of amorphous semiconductors Journal of Chemical Education. 57: 560-564. DOI: 10.1007/Bf00396353 |
0.355 |
|
| 1980 |
Adler D, Shur MS, Silver M, Ovshinsky SR. Threshold Switching in Chalcogenide-Glass Thin Films Journal of Applied Physics. 51: 3289-3309. DOI: 10.1007/978-1-4684-8745-9_16 |
0.364 |
|
| 1979 |
Yoffa EJ, Rodrigues WA, Adler D. Electronic correlations in narrow-band solids Physical Review B. 19: 1203-1212. DOI: 10.1103/Physrevb.19.1203 |
0.304 |
|
| 1979 |
Frye RC, Adler D, Shaw MP. Properties of chalcogenide-glass/n-GaAs heterojunctions Journal of Applied Physics. 50: 4866-4871. DOI: 10.1063/1.326551 |
0.331 |
|
| 1979 |
Petersen KE, Adler D. A model for the on state of amorphous chalcogenide threshold switches Journal of Applied Physics. 50: 925-932. DOI: 10.1063/1.326013 |
0.326 |
|
| 1978 |
Adler D. Density of states in the gap of tetrahedrally bonded amorphous semiconductors Physical Review Letters. 41: 1755-1758. DOI: 10.1103/Physrevlett.41.1755 |
0.392 |
|
| 1978 |
Ovshinsky SR, Adler D. Local structure, bonding, and electronic properties of covalent amorphous semiconductors Contemporary Physics. 19: 54-63. DOI: 10.1080/00107517808210876 |
0.34 |
|
| 1978 |
Walsh PJ, Ishioka S, Adler D. Electroluminescence from the on state of a thin‐film chalcogenide glass Applied Physics Letters. 33: 593-595. DOI: 10.1063/1.90472 |
0.355 |
|
| 1977 |
Adler D, Yoffa EJ. Localized electronic states in amorphous semiconductors Canadian Journal of Chemistry. 55: 1920-1929. DOI: 10.1139/V77-268 |
0.395 |
|
| 1977 |
Mabatah AK, Yoffa EJ, Eklund PC, Dresselhaus MS, Adler D. Anomalous electrical transport properties of Ni1-xCoxS2 Physical Review Letters. 39: 494-497. DOI: 10.1103/Physrevlett.39.494 |
0.341 |
|
| 1976 |
Kastner M, Adler D, Fritzsche H. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors Physical Review Letters. 37: 1504-1507. DOI: 10.1103/Physrevlett.37.1504 |
0.323 |
|
| 1976 |
Adler D, Yoffa EJ. Electronic Structure of Amorphous Semiconductors Physical Review Letters. 36: 1197-1200. DOI: 10.1103/Physrevlett.36.1197 |
0.341 |
|
| 1976 |
Mizrah T, Adler D. Operation of ITO/Si heterojunction solar cells Applied Physics Letters. 29: 682-684. DOI: 10.1063/1.88901 |
0.34 |
|
| 1976 |
Reinhard DK, Adler D, Arntz FO. Electron‐ and photon‐induced conductivity in chalcogenide glasses Journal of Applied Physics. 47: 1560-1573. DOI: 10.1063/1.322771 |
0.398 |
|
| 1976 |
Petersen KE, Adler D. On state of amorphous threshold switches Journal of Applied Physics. 47: 256-263. DOI: 10.1063/1.322309 |
0.385 |
|
| 1976 |
Mizrah T, Adler D. Photovoltaic properties of sputtered silicon films Journal of Non-Crystalline Solids. 22: 37-44. DOI: 10.1016/0022-3093(76)90005-3 |
0.396 |
|
| 1975 |
Petersen KE, Adler D. Electronic nature of amorphous threshold switching Applied Physics Letters. 27: 625-627. DOI: 10.1063/1.88312 |
0.334 |
|
| 1975 |
Bowen HK, Adler D, Auker BH. Electrical and optical properties of FeO Journal of Solid State Chemistry. 12: 355-359. DOI: 10.1016/0022-4596(75)90340-0 |
0.333 |
|
| 1975 |
Adler D. Fundamental problems in the electronic structure of transition-metal oxides Journal of Solid State Chemistry. 12: 332-340. DOI: 10.1016/0022-4596(75)90337-0 |
0.345 |
|
| 1974 |
Petersen KE, Adler D. On-state characteristics of amorphous/crystalline heterojunctions Applied Physics Letters. 25: 211-213. DOI: 10.1063/1.1655443 |
0.4 |
|
| 1974 |
Petersen KE, Adler D, Shaw MP. Operation of an amorphous-emitter transistor Applied Physics Letters. 25: 585-587. DOI: 10.1063/1.1655321 |
0.351 |
|
| 1973 |
Petersen KE, Birkholz U, Adler D. Properties of crystalline and amorphous silicon telluride Physical Review B. 8: 1453-1461. DOI: 10.1103/Physrevb.8.1453 |
0.402 |
|
| 1973 |
Reinhard DK, Arntz FO, Adler D. Field‐dependent conductivity of chalcogenide glasses Applied Physics Letters. 23: 521-523. DOI: 10.1063/1.1654983 |
0.364 |
|
| 1973 |
Reinhard DK, Arntz FO, Adler D. Properties of chalcogenide glass‐silicon heterojunctions Applied Physics Letters. 23: 186-188. DOI: 10.1063/1.1654853 |
0.386 |
|
| 1972 |
Kaplan T, Bullock DC, Adler D, Epstein DJ. Thermally Induced Negative Resistance in Si-Doped YIG Applied Physics Letters. 20: 439-441. DOI: 10.1063/1.1654007 |
0.373 |
|
| 1972 |
Adler D, Bowen HK, Ferrao LPC, Marchant DD, Singh RN, Sauvage JA. Effects of thermal-neutron irradiation on amorphous-silicon films☆ Journal of Non-Crystalline Solids. 844-849. DOI: 10.1016/0022-3093(72)90236-0 |
0.383 |
|
| 1972 |
Kaplan T, Adler D. Electrothermal switching in amorphous semiconductors Journal of Non-Crystalline Solids. 538-543. DOI: 10.1016/0022-3093(72)90189-5 |
0.314 |
|
| 1971 |
Kaplan T, Adler D. Thermal Effects in Amorphous‐Semiconductor Switching Applied Physics Letters. 19: 418-420. DOI: 10.1063/1.1653754 |
0.305 |
|
| 1970 |
Adler D, Feinleib J. Electrical and Optical Properties of Narrow-Band Materials Physical Review B. 2: 3112-3134. DOI: 10.1103/Physrevb.2.3112 |
0.388 |
|
| 1970 |
Bari RA, Adler D, Lange RV. Electrical Conductivity in Narrow Energy Bands Physical Review B. 2: 2898-2905. DOI: 10.1103/Physrevb.2.2898 |
0.304 |
|
| 1970 |
Adler D. Electrical and optical properties of transition-metal oxides Radiation Effects and Defects in Solids. 4: 123-131. DOI: 10.1080/00337577008234978 |
0.326 |
|
| 1970 |
Adler D, Franz JM, Hewes CR, Kraemer BP, Sellmyer DJ, Senturia SD. Transport properties of a memory-type chalcogenide glass Journal of Non-Crystalline Solids. 4: 330-337. DOI: 10.1016/0022-3093(70)90059-1 |
0.316 |
|
| 1969 |
Adler D, Feinleib J. Band Structure of Magnetic Semiconductors Journal of Applied Physics. 40: 1586-1588. DOI: 10.1063/1.1657783 |
0.339 |
|
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