| Year |
Citation |
Score |
| 2020 |
Krishna A, Raj A, Hatui N, Koksaldi O, Jang R, Keller S, Mishra UK. AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment Physica Status Solidi (a). 217: 1900692. DOI: 10.1002/Pssa.201900692 |
0.734 |
|
| 2019 |
Pasayat SS, Ahmadi E, Romanczyk B, Koksaldi O, Agarwal A, Guidry M, Gupta C, Wurm C, Keller S, Mishra UK. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009. DOI: 10.1088/1361-6641/Ab0761 |
0.689 |
|
| 2019 |
Zhang Y, Alema F, Mauze A, Koksaldi OS, Miller R, Osinsky A, Speck JS. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Apl Materials. 7: 22506. DOI: 10.1063/1.5058059 |
0.435 |
|
| 2018 |
Koksaldi OS, Haller J, Li H, Romanczyk B, Guidry M, Wienecke S, Keller S, Mishra UK. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance Ieee Electron Device Letters. 39: 1014-1017. DOI: 10.1109/Led.2018.2834939 |
0.74 |
|
| 2017 |
Ahmadi E, Koksaldi OS, Zheng X, Mates T, Oshima Y, Mishra UK, Speck JS. Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 71101. DOI: 10.7567/Apex.10.071101 |
0.763 |
|
| 2017 |
Ahmadi E, Koksaldi OS, Kaun SW, Oshima Y, Short DB, Mishra UK, Speck JS. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 41102. DOI: 10.7567/Apex.10.041102 |
0.72 |
|
| 2017 |
Agarwal A, Koksaldi O, Gupta C, Keller S, Mishra UK. Maskless regrowth of GaN for trenched devices by MOCVD Applied Physics Letters. 111: 233507. DOI: 10.1063/1.5003257 |
0.772 |
|
| 2017 |
Hestroffer K, Lund C, Koksaldi O, Li H, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang Q, Christen J, Kim MJ, Mishra UK, Keller S. Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 465: 55-59. DOI: 10.1016/J.Jcrysgro.2017.02.037 |
0.719 |
|
| 2017 |
Chan SH, Keller S, Koksaldi OS, Gupta C, DenBaars SP, Mishra UK. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane Journal of Crystal Growth. 464: 54-58. DOI: 10.1016/J.Jcrysgro.2016.11.096 |
0.776 |
|
| 2016 |
Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.021501 |
0.715 |
|
| 2016 |
Gupta C, Chan SH, Lund C, Agarwal A, Koksaldi OS, Liu J, Enatsu Y, Keller S, Mishra UK. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels Applied Physics Express. 9: 121001. DOI: 10.7567/Apex.9.121001 |
0.695 |
|
| 2014 |
Yeluri R, Liu X, Guidry M, Koksaldi OS, Lal S, Kim J, Lu J, Keller S, Mishra UK. Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN Applied Physics Letters. 105. DOI: 10.1063/1.4903344 |
0.731 |
|
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