| Year |
Citation |
Score |
| 2023 |
Shibata K, Yoshida M, Hirakawa K, Otsuka T, Bisri SZ, Iwasa Y. Single PbS colloidal quantum dot transistors. Nature Communications. 14: 7486. PMID 37980351 DOI: 10.1038/s41467-023-43343-7 |
0.534 |
|
| 2023 |
Septianto RD, Miranti R, Kikitsu T, Hikima T, Hashizume D, Matsushita N, Iwasa Y, Bisri SZ. Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots. Nature Communications. 14: 2670. PMID 37236922 DOI: 10.1038/s41467-023-38216-y |
0.477 |
|
| 2021 |
Liu L, Septianto RD, Bisri SZ, Ishida Y, Aida T, Iwasa Y. Evidence of band filling in PbS colloidal quantum dot square superstructures. Nanoscale. 13: 14001-14007. PMID 34477680 DOI: 10.1039/d0nr09189h |
0.47 |
|
| 2020 |
Miranti R, Shin D, Septianto RD, Ibáñez M, Kovalenko MV, Matsushita N, Iwasa Y, Bisri SZ. Exclusive Electron Transport in Core@Shell PbTe@PbS Colloidal Semiconductor Nanocrystal Assemblies. Acs Nano. PMID 32073817 DOI: 10.1021/Acsnano.9B08687 |
0.558 |
|
| 2020 |
Septianto RD, Liu L, Iskandar F, Matsushita N, Iwasa Y, Bisri SZ. On-demand tuning of charge accumulation and carrier mobility in quantum dot solids for electron transport and energy storage devices Npg Asia Materials. 12. DOI: 10.1038/S41427-020-0215-X |
0.575 |
|
| 2019 |
Liu L, Bisri SZ, Ishida Y, Aida T, Iwasa Y. Tunable electronic properties by ligand coverage control in PbS nanocrystal assemblies. Nanoscale. PMID 31647086 DOI: 10.1039/C9Nr07101F |
0.491 |
|
| 2019 |
Puebla J, Auvray F, Yamaguchi N, Xu M, Bisri SZ, Iwasa Y, Ishii F, Otani Y. Photoinduced Rashba Spin-to-Charge Conversion via an Interfacial Unoccupied State. Physical Review Letters. 122: 256401. PMID 31347901 DOI: 10.1103/Physrevlett.122.256401 |
0.448 |
|
| 2018 |
Derenskyi V, Gomulya W, Gao J, Bisri SZ, Pasini M, Loo YL, Loi MA. Semiconducting SWNTs sorted by polymer wrapping : How pure are they? Applied Physics Letters. 112: 72106. DOI: 10.1063/1.5011388 |
0.577 |
|
| 2017 |
Bisri SZ, Shimizu S, Nakano M, Iwasa Y. Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics. Advanced Materials (Deerfield Beach, Fla.). 29. PMID 28582588 DOI: 10.1002/Adma.201607054 |
0.559 |
|
| 2016 |
Nugraha MI, Matsui H, Bisri SZ, Sytnyk M, Heiss W, Loi MA, Takeya J. Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles Apl Materials. 4: 116105. DOI: 10.1063/1.4966208 |
0.624 |
|
| 2016 |
Nugraha MI, Matsui H, Watanabe S, Kubo T, Häusermann R, Bisri SZ, Sytnyk M, Heiss W, Loi MA, Takeya J. Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors Advanced Electronic Materials. 3: 1600360. DOI: 10.1002/Aelm.201600360 |
0.54 |
|
| 2016 |
Shulga AG, Piveteau L, Bisri SZ, Kovalenko MV, Loi MA. Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics Advanced Electronic Materials. 2. DOI: 10.1002/Aelm.201600095 |
0.595 |
|
| 2016 |
Shulga AG, Piveteau L, Bisri SZ, Kovalenko MV, Loi MA. Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics Advanced Electronic Materials. 2: 1500467. DOI: 10.1002/Aelm.201500467 |
0.62 |
|
| 2016 |
Bisri SZ, Derenskyi V, Gomulya W, Salazar-Rios JM, Fritsch M, Fröhlich N, Jung S, Allard S, Scherf U, Loi MA. Anomalous Carrier Transport in Ambipolar Field-Effect Transistor of Large Diameter Single-Walled Carbon Nanotube Network Advanced Electronic Materials. 2: 1500222. DOI: 10.1002/Aelm.201500222 |
0.584 |
|
| 2015 |
Hamaguchi A, Negishi T, Kimura Y, Ikeda Y, Takimiya K, Bisri SZ, Iwasa Y, Shiro T. Single-Crystal-Like Organic Thin-Film Transistors Fabricated from Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) Precursor-Polystyrene Blends. Advanced Materials (Deerfield Beach, Fla.). PMID 26418457 DOI: 10.1002/Adma.201502413 |
0.538 |
|
| 2015 |
Huisman EH, Shulga AG, Zomer PJ, Tombros N, Bartesaghi D, Bisri SZ, Loi MA, Koster LJ, van Wees BJ. High gain hybrid graphene-organic semiconductor phototransistors. Acs Applied Materials & Interfaces. 7: 11083-8. PMID 25961150 DOI: 10.1021/Acsami.5B00610 |
0.564 |
|
| 2015 |
Nugraha MI, Häusermann R, Bisri SZ, Matsui H, Sytnyk M, Heiss W, Takeya J, Loi MA. High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 2107-12. PMID 25688488 DOI: 10.1002/Adma.201404495 |
0.617 |
|
| 2015 |
Gomulya W, Rios JMS, Derenskyi V, Bisri SZ, Jung S, Fritsch M, Allard S, Scherf U, Dos Santos MC, Loi MA. Effect of temperature on the selection of semiconducting single walled carbon nanotubes using Poly(3-dodecylthiophene-2,5-diyl) Carbon. 84: 66-73. DOI: 10.1016/J.Carbon.2014.11.037 |
0.541 |
|
| 2015 |
Salazar-Rios JM, Gomulya W, Derenskyi V, Yang J, Bisri SZ, Chen Z, Facchetti A, Loi MA. Field-Effect Transistors: Selecting Semiconducting Single-Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide-Based Polymers (Adv. Electron. Mater. 8/2015) Advanced Electronic Materials. 1: n/a-n/a. DOI: 10.1002/Aelm.201570027 |
0.602 |
|
| 2015 |
Salazar-Rios JM, Gomulya W, Derenskyi V, Yang J, Bisri SZ, Chen Z, Facchetti A, Loi MA. Selecting Semiconducting Single-Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide-Based Polymers Advanced Electronic Materials. 1: 1500074. DOI: 10.1002/Aelm.201500074 |
0.583 |
|
| 2014 |
Derenskyi V, Gomulya W, Rios JM, Fritsch M, Fröhlich N, Jung S, Allard S, Bisri SZ, Gordiichuk P, Herrmann A, Scherf U, Loi MA. Carbon nanotube network ambipolar field-effect transistors with 10(8) on/off ratio. Advanced Materials (Deerfield Beach, Fla.). 26: 5969-75. PMID 25043747 DOI: 10.1002/Adma.201401395 |
0.579 |
|
| 2014 |
Samanta SK, Fritsch M, Scherf U, Gomulya W, Bisri SZ, Loi MA. Conjugated polymer-assisted dispersion of single-wall carbon nanotubes: the power of polymer wrapping. Accounts of Chemical Research. 47: 2446-56. PMID 25025887 DOI: 10.1021/Ar500141J |
0.594 |
|
| 2014 |
Bisri SZ, Degoli E, Spallanzani N, Krishnan G, Kooi BJ, Ghica C, Yarema M, Heiss W, Pulci O, Ossicini S, Loi MA. Determination of the electronic energy levels of colloidal nanocrystals using field-effect transistors and Ab-initio calculations. Advanced Materials (Deerfield Beach, Fla.). 26: 5639-45. PMID 24920491 DOI: 10.1002/Adma.201400660 |
0.565 |
|
| 2014 |
Bisri SZ, Piliego C, Gao J, Loi MA. Outlook and emerging semiconducting materials for ambipolar transistors. Advanced Materials (Deerfield Beach, Fla.). 26: 1176-99. PMID 24591008 DOI: 10.1002/Adma.201304280 |
0.659 |
|
| 2014 |
Balazs DM, Nugraha MI, Bisri SZ, Sytnyk M, Heiss W, Loi MA. Reducing charge trapping in PbS colloidal quantum dot solids Applied Physics Letters. 104: 112104. DOI: 10.1063/1.4869216 |
0.75 |
|
| 2014 |
Bisri SZ, Takenobu T, Iwasa Y. The pursuit of electrically-driven organic semiconductor lasers Journal of Materials Chemistry C. 2: 2827-2836. DOI: 10.1039/C3Tc32206H |
0.633 |
|
| 2014 |
Hotta S, Yamao T, Bisri SZ, Takenobu T, Iwasa Y. Organic single-crystal light-emitting field-effect transistors Journal of Materials Chemistry C. 2: 965-980. DOI: 10.1039/C3Tc31998A |
0.694 |
|
| 2013 |
Gomulya W, Costanzo GD, de Carvalho EJ, Bisri SZ, Derenskyi V, Fritsch M, Fröhlich N, Allard S, Gordiichuk P, Herrmann A, Marrink SJ, dos Santos MC, Scherf U, Loi MA. Semiconducting single-walled carbon nanotubes on demand by polymer wrapping. Advanced Materials (Deerfield Beach, Fla.). 25: 2948-56. PMID 23616236 DOI: 10.1002/Adma.201300267 |
0.583 |
|
| 2013 |
Bisri SZ, Piliego C, Yarema M, Heiss W, Loi MA. Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals. Advanced Materials (Deerfield Beach, Fla.). 25: 4309-14. PMID 23580404 DOI: 10.1002/Adma.201205041 |
0.632 |
|
| 2013 |
Piliego C, Protesescu L, Bisri SZ, Kovalenko MV, Loi MA. 5.2% efficient PbS nanocrystal Schottky solar cells Energy and Environmental Science. 6: 3054-3059. DOI: 10.1039/C3Ee41479E |
0.589 |
|
| 2013 |
Yomogida Y, Sakai H, Sawabe K, Gocho S, Bisri SZ, Nakanotani H, Adachi C, Hasobe T, Iwasa Y, Takenobu T. Multi-color light-emitting transistors composed of organic single crystals Organic Electronics: Physics, Materials, Applications. 14: 2737-2742. DOI: 10.1016/J.Orgel.2013.07.025 |
0.65 |
|
| 2012 |
Bisri SZ, Sawabe K, Imakawa M, Maruyama K, Yamao T, Hotta S, Iwasa Y, Takenobu T. Organic single-crystal light-emitting transistor coupling with optical feedback resonators. Scientific Reports. 2: 985. PMID 23248748 DOI: 10.1038/Srep00985 |
0.656 |
|
| 2012 |
Bisri SZ, Gao J, Derenskyi V, Gomulya W, Iezhokin I, Gordiichuk P, Herrmann A, Loi MA. High performance ambipolar field-effect transistor of random network carbon nanotubes. Advanced Materials (Deerfield Beach, Fla.). 24: 6147-52. PMID 23001950 DOI: 10.1002/Adma.201202699 |
0.627 |
|
| 2012 |
Bisri SZ, Gao J, Derenskyi V, Gomulya W, Iezhokin I, Gordiichuk P, Herrmann A, Loi MA. Carbon Nanotubes: High Performance Ambipolar Field‐Effect Transistor of Random Network Carbon Nanotubes (Adv. Mater. 46/2012) Advanced Materials. 24: 6115-6115. DOI: 10.1002/Adma.201290292 |
0.535 |
|
| 2011 |
Bisri SZ, Takenobu T, Sawabe K, Tsuda S, Yomogida Y, Yamao T, Hotta S, Adachi C, Iwasa Y. p-i-n Homojunction in organic light-emitting transistors. Advanced Materials (Deerfield Beach, Fla.). 23: 2753-8. PMID 21608046 DOI: 10.1002/Adma.201004572 |
0.666 |
|
| 2010 |
Yomogida Y, Takenobu T, Shimotani H, Sawabe K, Bisri SZ, Yamao T, Hotta S, Iwasa Y. Green light emission from the edges of organic single-crystal transistors Applied Physics Letters. 97: 173301. DOI: 10.1063/1.3504690 |
0.688 |
|
| 2010 |
Sawabe K, Takenobu T, Bisri SZ, Yamao T, Hotta S, Iwasa Y. High current densities in a highly photoluminescent organic single-crystal light-emitting transistor Applied Physics Letters. 97: 043307. DOI: 10.1063/1.3466915 |
0.706 |
|
| 2010 |
Bisri SZ, Takenobu T, Takahashi T, Iwasa Y. Electron transport in rubrene single-crystal transistors Applied Physics Letters. 96: 183304. DOI: 10.1063/1.3419899 |
0.681 |
|
| 2009 |
Sukirno S, Bisri SZ, Irmelia I. Electronic Transport Parameter of Carbon Nanotube MetalSemiconductor OnTube Heterojunction Journal of Mathematical and Fundamental Sciences. 41: 15-37. DOI: 10.5614/Itbj.Sci.2009.41.1.2 |
0.36 |
|
| 2009 |
Bisri SZ, Takenobu T, Yomogida Y, Shimotani H, Yamao T, Hotta S, Iwasa Y. High Mobility and Luminescent Efficiency in Organic Single-Crystal Light-Emitting Transistors Advanced Functional Materials. 19: 1728-1735. DOI: 10.1002/Adfm.200900028 |
0.708 |
|
| 2008 |
Takenobu T, Bisri SZ, Takahashi T, Yahiro M, Adachi C, Iwasa Y. High current density in light-emitting transistors of organic single crystals. Physical Review Letters. 100: 066601. PMID 18352500 DOI: 10.1103/Physrevlett.100.066601 |
0.703 |
|
| 2008 |
Bisri SZ, Sari RY, Hasanah L, Usman I. Catalytic Carbon Submicron Fabrication Using Home- Built Very-High Frequency Plasma Enhanced Chemical Vapour Deposition Journal of Mathematical and Fundamental Sciences. 40: 166-181. DOI: 10.5614/Itbj.Sci.2008.40.2.6 |
0.309 |
|
| 2008 |
Bisri SZ, Takahashi T, Takenobu T, Yahiro M, Adachi C, Iwasa Y. Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes Advances in Materials Research. 10: 103-110. DOI: 10.1007/978-3-540-77968-1_8 |
0.69 |
|
| 2007 |
Bisri SZ, Takahashi T, Takenobu T, Yahiro M, Adachi C, Iwasa Y. Ambipolar Field-Effect Transistor of High Photoluminescent Material Tetraphenylpyrene (TPPy) Single Crystal Japanese Journal of Applied Physics. 46: L596-L598. DOI: 10.1143/Jjap.46.L596 |
0.709 |
|
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