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Christopher I. Thomas - Publications

Affiliations: 
2009 Cornell University, Ithaca, NY, United States 
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Hwang J, Shields VB, Thomas CI, Shivaraman S, Hao D, Kim M, Woll AR, Tompa GS, Spencer MG. Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD). Journal of Crystal Growth. 312: 3219-3224. PMID 20976026 DOI: 10.1016/J.Jcrysgro.2010.07.046  0.691
2009 Lu J, Thomas CI, Chandrashekhar MVS, Spencer MG. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method Journal of Applied Physics. 105. DOI: 10.1063/1.3130398  0.682
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction Applied Physics Letters. 91. DOI: 10.1063/1.2754650  0.669
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face Applied Physics Letters. 90. DOI: 10.1063/1.2730738  0.687
2006 Chandrashekhar MVS, Thomas CI, Li H, Spencer MG, Lal A. Demonstration of a 4H SiC betavoltaic cell Applied Physics Letters. 88: 1-3. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1351  0.677
2006 Chandrashekhar MVS, Thomas CI, Spencer MG. Measurement of the mean electron-hole pair ionization energy in 4H SiC Applied Physics Letters. 89. DOI: 10.1063/1.2243799  0.657
2003 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Passivation effect on channel recessed 4H-SiC MESFETs Materials Science Forum. 433: 749-752. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.749  0.709
2003 Barrios CA, Thomas CI, Spencer M, Lipson M. 3C-SiC modulator for high-speed integrated photonics Mrs Proceedings. 799. DOI: 10.1557/Proc-799-Z5.12  0.53
2003 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs Ieee Transactions On Electron Devices. 50: 1569-1574. DOI: 10.1109/Ted.2003.814982  0.745
2003 Cha HY, Thomas CI, Choi YC, Eastman LF, Spencer MG. Gate field emission induced breakdown in power SiC MESFETs Ieee Electron Device Letters. 24: 571-573. DOI: 10.1109/Led.2003.815422  0.696
2002 Cha H, Thomas CI, Koley G, Eastman LF, Spencer MG. The Effect of Channel Recess and Passivation on 4H-SiC MESFETs Mrs Proceedings. 742. DOI: 10.1557/PROC-742-K5.19  0.714
2002 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. The effect of channel recess and passivation on 4H-SiC MESFETs Materials Research Society Symposium - Proceedings. 742: 283-288. DOI: 10.1557/Proc-742-K5.19  0.726
2002 Koley G, Cha HY, Thomas CI, Spencer MG. Laser-induced surface potential transients observed in III-nitride heterostructures Applied Physics Letters. 81: 2282-2284. DOI: 10.1063/1.1506416  0.702
1999 Thomas C, Taylor C, Griffin J, Rose WL, Spencer MG, Capano M, Rendakova S, Kornegay K. Annealing of Ion Implantation Damage in SiC Using a Graphite Mask Mrs Proceedings. 572. DOI: 10.1557/PROC-572-45  0.495
1999 Thomas C, Taylor C, Griffin J, Rose WL, Spencer MG, Capano M, Rendakova S, Kornegay K. Annealing of ion implantation damage in SiC using a graphite mask Materials Research Society Symposium - Proceedings. 572: 45-50. DOI: 10.1557/Proc-572-45  0.551
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