Year |
Citation |
Score |
2019 |
Kim JH, Bergren MR, Park JC, Adhikari S, Lorke M, Frauenheim T, Choe DH, Kim B, Choi H, Gregorkiewicz T, Lee YH. Carrier multiplication in van der Waals layered transition metal dichalcogenides. Nature Communications. 10: 5488. PMID 31792222 DOI: 10.1038/S41467-019-13325-9 |
0.352 |
|
2019 |
Si C, Choe DH, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photo-Induced Vacancy Ordering and Phase Transition in MoTe2. Nano Letters. PMID 31096752 DOI: 10.1021/Acs.Nanolett.9B00613 |
0.572 |
|
2018 |
Choe DH, West D, Zhang S. Band Alignment and the Built-in Potential of Solids. Physical Review Letters. 121: 196802. PMID 30468617 DOI: 10.1103/Physrevlett.121.196802 |
0.533 |
|
2018 |
Zhang J, Xie W, Agiorgousis ML, Choe DH, Meunier V, Xu X, Zhao J, Zhang S. Quantum oscillation in carrier transport in two-dimensional junctions. Nanoscale. PMID 29666851 DOI: 10.1039/C8Nr01359D |
0.533 |
|
2018 |
Lucking MC, Xie W, Choe DH, West D, Lu TM, Zhang SB. Traditional Semiconductors in the Two-Dimensional Limit. Physical Review Letters. 120: 086101. PMID 29543005 DOI: 10.1103/Physrevlett.120.086101 |
0.377 |
|
2017 |
Kim S, Song S, Park J, Yu HS, Cho S, Kim D, Baik J, Choe DH, Chang KJ, Lee YH, Kim SW, Yang H. Long-Range Lattice Engineering of MoTe2 by 2D Electride. Nano Letters. PMID 28488868 DOI: 10.1021/Acs.Nanolett.6B05199 |
0.511 |
|
2017 |
Han WH, Oh YJ, Choe D, Kim S, Lee I, Chang KJ. Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B Npg Asia Materials. 9. DOI: 10.1038/Am.2017.98 |
0.532 |
|
2016 |
Sung HJ, Choe DH, Chang KJ. Tuning Dirac points by strain in MoX2 nanoribbons (X = S, Se, Te) with a 1T' structure. Physical Chemistry Chemical Physics : Pccp. PMID 27257641 DOI: 10.1039/C6Cp02204A |
0.485 |
|
2016 |
Choe DH, Sung HJ, Chang KJ. Understanding topological phase transition in monolayer transition metal dichalcogenides Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125109 |
0.466 |
|
2015 |
Cho S, Kim S, Kim JH, Zhao J, Seok J, Keum DH, Baik J, Choe DH, Chang KJ, Suenaga K, Kim SW, Lee YH, Yang H. DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂. Science (New York, N.Y.). 349: 625-8. PMID 26250680 DOI: 10.1126/Science.Aab3175 |
0.519 |
|
2015 |
Choe DH, Chang KJ. Universal Conductance Fluctuation in Two-Dimensional Topological Insulators. Scientific Reports. 5: 10997. PMID 26055574 DOI: 10.1038/Srep10997 |
0.393 |
|
2015 |
Song SH, Kim BH, Choe DH, Kim J, Kim DC, Lee DJ, Kim JM, Chang KJ, Jeon S. Bandgap Widening of Phase Quilted, 2D MoS2 by Oxidative Intercalation. Advanced Materials (Deerfield Beach, Fla.). 27: 3152-8. PMID 25867545 DOI: 10.1002/Adma.201500649 |
0.417 |
|
2015 |
Keum DH, Cho S, Kim JH, Choe DH, Sung HJ, Kan M, Kang H, Hwang JY, Kim SW, Yang H, Chang KJ, Lee YH. Bandgap opening in few-layered monoclinic MoTe2 Nature Physics. 11: 482-486. DOI: 10.1038/Nphys3314 |
0.494 |
|
2014 |
Sung HJ, Choe DH, Chang KJ. The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2on α-quartz New Journal of Physics. 16. DOI: 10.1088/1367-2630/16/11/113055 |
0.448 |
|
2012 |
Choe DH, Chang KJ. Effect of dimensionality on the localization behavior in hydrogenated graphene systems. Nano Letters. 12: 5175-80. PMID 22963004 DOI: 10.1021/Nl302207P |
0.39 |
|
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