| Year |
Citation |
Score |
| 2012 |
Pitigala PKDDP, Matsik SG, Perera AGU, Khanna SP, Li LH, Linfield EH, Wasilewski ZR, Buchanan M, Liu HC. Photovoltaic infrared detection with p-type graded barrier heterostructures Journal of Applied Physics. 111: 084505. DOI: 10.1063/1.4704695 |
0.764 |
|
| 2011 |
Perera AGU, Matsik SG, Pitigala DP, Lao YF, Khanna SP, Li LH, Linfield EH, Wasilewski ZR, Buchanan M, Wu XH, Liu HC. Room temperature photovoltaic response of split-off band infrared detectors with a graded barrier Proceedings of Spie. 7945. DOI: 10.1117/12.870047 |
0.494 |
|
| 2011 |
Pitigala P, Jayaweera P, Matsik S, Perera A, Liu H. Highly sensitive GaAs/AlGaAs heterojunction bolometer Sensors and Actuators a: Physical. 167: 245-248. DOI: 10.1016/J.Sna.2011.02.017 |
0.443 |
|
| 2011 |
Shishodia M, Jayaweera P, Matsik S, Perera A, Liu H, Buchanan M. Surface plasmon enhanced IR absorption: Design and experiment Photonics and Nanostructures - Fundamentals and Applications. 9: 95-100. DOI: 10.1016/J.Photonics.2010.12.002 |
0.41 |
|
| 2011 |
Perera AGU, Matsik SG, Pitigala DP, Lao YF, Khanna SP, Li LH, Linfield EH, Wasilewski ZR, Buchanan M, Wu XH, Liu HC. Effects of graded barriers on the operation of split-off band infrared detectors Infrared Physics & Technology. 54: 296-301. DOI: 10.1016/J.Infrared.2010.12.033 |
0.501 |
|
| 2010 |
Unil Perera AG, Matsik SG, Shishodia MS, Jayasinghe RC, Pitigala PKDDP. Spin split-off band based high operating temperature IR detectors in 3-5 μm and beyond Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.850234 |
0.532 |
|
| 2010 |
Lao YF, Jayaweera PVV, Matsik SG, Perera AGU, Liu HC, Buchanan M, Wasilewski ZR. Analysis of Dark Current Mechanisms for Split-Off Band Infrared Detectors at High Temperatures Ieee Transactions On Electron Devices. 57: 1230-1236. DOI: 10.1109/Ted.2010.2046065 |
0.46 |
|
| 2010 |
Ariyawansa G, Aytac Y, Perera AGU, Matsik SG, Buchanan M, Wasilewski ZR, Liu HC. Five-band bias-selectable integrated quantum well detector in an n-p-n architecture Applied Physics Letters. 97: 231102. DOI: 10.1063/1.3524236 |
0.741 |
|
| 2009 |
Ariyawansa G, Jayaweera PV, Perera AG, Matsik SG, Buchanan M, Wasilewski ZR, Liu HC. Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device. Optics Letters. 34: 2036-8. PMID 19571991 DOI: 10.1364/Ol.34.002036 |
0.812 |
|
| 2009 |
Byrum LE, Ariyawansa G, Jayasinghe R, Dietz N, Perera AGU, Matsik SG, Ferguson IT, Bezinger A, Liu HC. Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.828156 |
0.783 |
|
| 2009 |
Perera AGU, Jayasinghe RC, Ariyawansa G, Dietz N, Matsik SG, Ferguson IT, Liu HC. GaN-based heterojunction structures for ultraviolet/infrared dual-band detection 2009 Ieee Nanotechnology Materials and Devices Conference, Nmdc 2009. 142-147. DOI: 10.1109/NMDC.2009.5167529 |
0.794 |
|
| 2009 |
Matsik SG, Jayaweera PVV, Perera AGU, Choi KK, Wijewarnasuriya P. Device modeling for split-off band detectors Journal of Applied Physics. 106: 064503. DOI: 10.1063/1.3224873 |
0.483 |
|
| 2009 |
Byrum LE, Ariyawansa G, Jayasinghe RC, Dietz N, Perera AGU, Matsik SG, Ferguson IT, Bezinger A, Liu HC. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors Journal of Applied Physics. 106. DOI: 10.1063/1.3211292 |
0.706 |
|
| 2009 |
Matsik SG, Jayasinghe RC, Weerasekara AB, Perera AGU, Linfield EH, Khanna SP, Lachab M, Liu HC. Effect of emitter thickness on the spectral shape of heterojunction interfacial workfunction internal photoemission detectors Journal of Applied Physics. 106. DOI: 10.1063/1.3153954 |
0.796 |
|
| 2009 |
Byrum LE, Ariyawansa G, Jayasinghe RC, Dietz N, Perera AGU, Matsik SG, Ferguson IT, Bezinger A, Liu HC. Capacitance hysteresis in GaN/AlGaN heterostructures Journal of Applied Physics. 105. DOI: 10.1063/1.3068179 |
0.7 |
|
| 2009 |
Perera A, Jayaweera P, Ariyawansa G, Matsik S, Tennakone K, Buchanan M, Liu H, Su X, Bhattacharya P. Room temperature nano- and microstructure photon detectors Microelectronics Journal. 40: 507-511. DOI: 10.1016/J.Mejo.2008.06.019 |
0.817 |
|
| 2009 |
Perera A, Jayaweera P, Matsik S, Liu H, Buchanan M, Wasilewski Z. Operating temperature and the responsivity of split-off band detectors Infrared Physics & Technology. 52: 241-246. DOI: 10.1016/J.Infrared.2009.05.024 |
0.522 |
|
| 2008 |
Jayasinghe RC, Ariyawansa G, Dietz N, Perera AG, Matsik SG, Yu HB, Ferguson IT, Bezinger A, Laframboise SR, Buchanan M, Liu HC. Simultaneous detection of ultraviolet and infrared radiation in a single GaN/GaAlN heterojunction. Optics Letters. 33: 2422-4. PMID 18978874 DOI: 10.1364/Ol.33.002422 |
0.801 |
|
| 2008 |
Jit S, Weerasekara AB, Jayasinghe RC, Matsik SG, Perera AGU, Buchanan M, Sproule GI, Liu HC, Stintz A, Krishna S, Khanna SP, Lachab M, Linfield EH. Dopant migration-induced interface dipole effect in n-doped GaAs/AlGaAs terahertz detectors Ieee Electron Device Letters. 29: 1090-1093. DOI: 10.1109/Led.2008.2002946 |
0.813 |
|
| 2008 |
Matsik SG, Perera AGU. Self-consistent performance modeling for dualband detectors Journal of Applied Physics. 104: 044502. DOI: 10.1063/1.2967714 |
0.458 |
|
| 2008 |
Jayaweera PVV, Matsik SG, Perera AGU, Liu HC, Buchanan M, Wasilewski ZR. Uncooled infrared detectors for 3–5μm and beyond Applied Physics Letters. 93: 21105. DOI: 10.1063/1.2959060 |
0.523 |
|
| 2008 |
Ariyawansa G, Apalkov V, Perera AGU, Matsik SG, Huang G, Bhattacharya P. Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows Applied Physics Letters. 92: 111104. DOI: 10.1063/1.2898521 |
0.717 |
|
| 2008 |
Perera AGU, Ariyawansa G, Jayaweera PVV, Matsik SG, Buchanan M, Liu HC. Semiconductor terahertz detectors and absorption enhancement using plasmons Microelectronics Journal. 39: 601-606. DOI: 10.1016/J.Mejo.2007.07.086 |
0.725 |
|
| 2007 |
Wu le K, Hao HL, Shen WZ, Ariyawansa G, Perera AG, Matsik SG. Dual-band pixelless upconversion imaging devices. Optics Letters. 32: 2366-8. PMID 17700787 DOI: 10.1364/Ol.32.002366 |
0.796 |
|
| 2007 |
Weerasekara A, Rinzan M, Matsik S, Perera AG, Buchanan M, Liu HC, von Winckel G, Stintz A, Krishna S. n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency. Optics Letters. 32: 1335-7. PMID 17440579 DOI: 10.1364/Ol.32.001335 |
0.798 |
|
| 2007 |
Perera AGU, Ariyawansa G, Apalkov VM, Matsik SG, Su XH, Chakrabarti S, Bhattacharya P. Wavelength and polarization selective multi-band tunnelling quantum dot detectors Opto-Electronics Review. 15: 223-228. DOI: 10.2478/S11772-007-0024-6 |
0.755 |
|
| 2007 |
Perera AGU, Ariyawansa G, Jayasinghe R, Byrum L, Dietz N, Matsik SG, Ferguson IT, Luo H, Bezinger A, Liu HC. Dual band HEIWIP detectors with nitride materials Proceedings of Spie - the International Society For Optical Engineering. 6678. DOI: 10.1117/12.734731 |
0.772 |
|
| 2007 |
Jayaweera PVV, Matsik SG, Perera AGU, Paltiel Y, Sher A, Raizman A, Luo H, Liu HC. GaSb homojunctions for far-infrared (terahertz) detection Applied Physics Letters. 90. DOI: 10.1063/1.2713760 |
0.523 |
|
| 2007 |
Weerasekara A, Rinzan M, Matsik S, Perera A, Buchanan M, Liu H, von Winckel G, Stintz A, Krishna S. Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity Infrared Physics & Technology. 50: 194-198. DOI: 10.1016/J.Infrared.2006.10.019 |
0.821 |
|
| 2007 |
Rinzan M, Matsik S, Perera A. Quantum mechanical effects in internal photoemission THz detectors Infrared Physics & Technology. 50: 199-205. DOI: 10.1016/J.Infrared.2006.10.014 |
0.464 |
|
| 2007 |
Perera AGU, Ariyawansa G, Rinzan MBM, Stevens M, Alevli M, Dietz N, Matsik SG, Asghar A, Ferguson IT, Luo H, Bezinger A, Liu HC. Performance improvements of ultraviolet/infrared dual-band detectors Infrared Physics and Technology. 50: 142-148. DOI: 10.1016/J.Infrared.2006.10.013 |
0.765 |
|
| 2007 |
Matsik S, Rinzan M, Perera A, Tan H, Jagadish C, Liu H. Effects of a p–n junction on heterojunction far infrared detectors Infrared Physics & Technology. 50: 274-278. DOI: 10.1016/J.Infrared.2006.10.010 |
0.489 |
|
| 2007 |
Jayaweera P, Matsik S, Tennakone K, Perera A, Liu H, Krishna S. Spin split-off transition based IR detectors operating at high temperatures Infrared Physics & Technology. 50: 279-283. DOI: 10.1016/J.Infrared.2006.10.007 |
0.487 |
|
| 2006 |
Ariyawansa G, Rinzan MBM, Strassburg M, Dietz N, Perera AGU, Matsik SG, Asghar A, Ferguson IT, Luo H, Liu HC. GaN∕AlGaN heterojunction infrared detector responding in 8–14 and 20–70μm ranges Applied Physics Letters. 89: 141122. DOI: 10.1063/1.2360205 |
0.767 |
|
| 2006 |
Ariyawansa G, Rinzan MBM, Alevli M, Strassburg M, Dietz N, Perera AGU, Matsik SG, Asghar A, Ferguson IT, Luo H, Bezinger A, Liu HC. GaN/AlGaN ultraviolet/infrared dual-band detector Applied Physics Letters. 89. DOI: 10.1063/1.2345226 |
0.762 |
|
| 2006 |
Ariyawansa G, Rinzan MBM, Matsik SG, Hastings G, Perera AGU, Liu HC, Buchanan M, Sproule GI, Gavrilenko VI, Kuznetsov VP. Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions Applied Physics Letters. 89: 061112. DOI: 10.1063/1.2336202 |
0.733 |
|
| 2006 |
Weerasekara AB, Matsik SG, Cymbalyuk GS, Perera AGU. Grouping behavior of inter-pulse time intervals for triggered pulses in an AlGaAs/InGaAs multilayer structure Physica D: Nonlinear Phenomena. 215: 159-165. DOI: 10.1016/J.Physd.2006.01.020 |
0.728 |
|
| 2005 |
Matsik SG, Rinzan MBM, Esaev DG, Perera AGU, Winckel Gv, Stintz A, Krishna S, Liu HC, Byloos MD, Oogarah T, Sproule GI, Liu K, Buchanan M. Effect of doped substrate on GaAs-AlGaAs interfacial workfunction IR detector response through cavity effect Ieee Transactions On Electron Devices. 52: 413-418. DOI: 10.1109/Ted.2005.843876 |
0.474 |
|
| 2005 |
Ariyawansa G, Rinzan MBM, Esaev DG, Matsik SG, Hastings G, Perera AGU, Liu HC, Zvonkov BN, Gavrilenko VI. Near- and far-infrared p‐GaAs dual-band detector Applied Physics Letters. 86: 143510. DOI: 10.1063/1.1899242 |
0.775 |
|
| 2005 |
Hu ZG, Rinzan MBM, Matsik SG, Perera AGU, Von Winckel G, Stintz A, Krishna S. Optical characterizations of heavily doped p-type AlxGa1−xAs and GaAs epitaxial films at terahertz frequencies Journal of Applied Physics. 97: 093529. DOI: 10.1063/1.1894581 |
0.337 |
|
| 2005 |
Rinzan MBM, Perera AGU, Matsik SG, Liu HC, Wasilewski ZR, Buchanan M. AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold Applied Physics Letters. 86: 71112. DOI: 10.1063/1.1867561 |
0.528 |
|
| 2005 |
Rinzan M, Perera A, Matsik S, Liu H, Buchanan M, von Winckel G, Stintz A, Krishna S. Terahertz absorption in AlGaAs films and detection using heterojunctions Infrared Physics & Technology. 47: 188-194. DOI: 10.1016/J.Infrared.2005.02.025 |
0.458 |
|
| 2004 |
Rinzan MBM, Esaev DG, Perera AGU, Matsik SG, Von Winckel G, Stintz A, Krishna S. Free carrier absorption in Be-doped epitaxial AlGaAs thin films Applied Physics Letters. 85: 5236-5238. DOI: 10.1063/1.1829383 |
0.447 |
|
| 2004 |
Esaev DG, Rinzan MBM, Matsik SG, Perera AGU. Design and optimization of GaAs∕AlGaAs heterojunction infrared detectors Journal of Applied Physics. 96: 4588-4597. DOI: 10.1063/1.1786342 |
0.481 |
|
| 2004 |
Matsik SG, Rinzan MBM, Esaev DG, Perera AGU, Liu HC, Buchanan M. 20 μm cutoff heterojunction interfacial work function internal photoemission detectors Applied Physics Letters. 84: 3435-3437. DOI: 10.1063/1.1634386 |
0.466 |
|
| 2004 |
Esaev DG, Rinzan MBM, Matsik SG, Perera AGU, Liu HC, Zvonkov BN, Gavrilenko VI, Belyanin AA. High performance single emitter homojunction interfacial work function far infrared detectors Journal of Applied Physics. 95: 512-519. DOI: 10.1063/1.1632553 |
0.587 |
|
| 2003 |
Krishna S, Raghavan S, von Winckel G, Stintz A, Ariyawansa G, Matsik SG, Perera AGU. Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector Applied Physics Letters. 83: 2745-2747. DOI: 10.1063/1.1615838 |
0.801 |
|
| 2003 |
Esaev DG, Matsik SG, Rinzan MBM, Perera AGU, Liu HC, Buchanan M. Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors Journal of Applied Physics. 93: 1879-1883. DOI: 10.1063/1.1539918 |
0.484 |
|
| 2003 |
Matsik SG, Rinzan MBM, Perera AGU, Liu HC, Wasilewski ZR, Buchanan M. Cutoff tailorability of heterojunction terahertz detectors Applied Physics Letters. 82: 139-141. DOI: 10.1063/1.1534409 |
0.491 |
|
| 2003 |
Perera AGU, Matsik SG, Rinzan MBM, Weerasekara A, Alevli M, Liu HC, Buchanan M, Zvonkov B, Gavrilenko V. The effects of light-heavy hole transitions on the cutoff wavelengths of far infrared detectors Infrared Physics and Technology. 44: 347-353. DOI: 10.1016/S1350-4495(03)00154-3 |
0.795 |
|
| 2002 |
Perera AGU, Matsik SG. Quantum Structures For Far-Infrared Detection International Journal of High Speed Electronics and Systems. 12: 821-872. DOI: 10.1142/S012915640200171X |
0.519 |
|
| 2001 |
Letov V, Ershov M, Matsik SG, Perera AGU, Liu HC, Wasilewski ZR, Buchanan M. Transient photocurrent overshoot in quantum-well infrared photodetectors Applied Physics Letters. 79: 2094-2096. DOI: 10.1063/1.1400772 |
0.404 |
|
| 2001 |
Perera AGU, Matsik SG, Yaldiz B, Liu HC, Shen A, Gao M, Wasilewski ZR, Buchanan M. Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm Applied Physics Letters. 78: 2241-2243. DOI: 10.1063/1.1361283 |
0.588 |
|
| 2001 |
Ershov M, Yaldiz B, Perera AGU, Matsik SG, Liu HC, Buchanan M, Wasilewski ZR, Williams MD. Space charge spectroscopy of integrated quantum well infrared photodetector–light emitting diode Infrared Physics & Technology. 42: 259-265. DOI: 10.1016/S1350-4495(01)00084-6 |
0.431 |
|
| 2001 |
Perera AGU, Matsik SG, Liu HC, Gao M, Buchanan M, Schaff WJ, Yeo W. 35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs Infrared Physics & Technology. 42: 157-162. DOI: 10.1016/S1350-4495(01)00071-8 |
0.511 |
|
| 2001 |
Perera A, Matsik S, Letov V, Liu H, Gao M, Buchanan M, Schaff W. Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures Solid-State Electronics. 45: 1121-1125. DOI: 10.1016/S0038-1101(01)00138-1 |
0.311 |
|
| 2000 |
Perera AGU, Matsik SG, Liu HC, Gao M, Buchanan M, Schaff WJ, Yeo W. GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm Applied Physics Letters. 77: 741-743. DOI: 10.1063/1.127104 |
0.508 |
|
| 2000 |
Perera AGU, Matsik SG, Ershov M, Yi YW, Liu HC, Buchanan M, Wasilewski ZR. Effects of traps on the dark current transients in GaAs/AlGaAs quantum-well infrared photodetectors Physica E-Low-Dimensional Systems & Nanostructures. 7: 130-134. DOI: 10.1016/S1386-9477(99)00302-1 |
0.423 |
|
| 2000 |
Ershov M, Liu H, Perera A, Matsik S. Optical interference and nonlinearities in quantum-well infrared photodetectors Physica E: Low-Dimensional Systems and Nanostructures. 7: 115-119. DOI: 10.1016/S1386-9477(99)00293-3 |
0.387 |
|
| 1998 |
Perera AGU, Silvestrov VG, Matsik SG, Liu HC, Buchanan M, Wasilewski ZR, Ershov M. Nonuniform vertical charge transport and relaxation in quantum well infrared detectors Journal of Applied Physics. 83: 991-997. DOI: 10.1063/1.366787 |
0.397 |
|
| 1998 |
Perera AGU, Shen WZ, Matsik SG, Liu HC, Buchanan M, Schaff WJ. GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm Applied Physics Letters. 72: 1596-1598. DOI: 10.1063/1.121126 |
0.512 |
|
| 1996 |
Perera AGU, Matsik SG, Francombe MH. Infrared detection with spontaneous pulsing in multiquantum well structures Proceedings of Spie. 2746: 142-151. DOI: 10.1117/12.243035 |
0.42 |
|
| 1995 |
Perera AGU, Matsik SG. Space charge analysis in quantum well structures leading to spontaneous pulsing Applied Physics Letters. 67: 962-964. DOI: 10.1063/1.114709 |
0.374 |
|
| 1995 |
Perera A, Matsik S. Chaotic to periodic spontaneous pulsing in current driven silicon p-i-n structures Physica D: Nonlinear Phenomena. 84: 615-625. DOI: 10.1016/0167-2789(94)00181-O |
0.353 |
|
| 1994 |
Perera AGU, Matsik S. Device model for pulsing in siliconp‐i‐nstructures Applied Physics Letters. 64: 878-880. DOI: 10.1063/1.110982 |
0.353 |
|
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