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Pernell Dongmo - Publications

Affiliations: 
2015 University of Delaware, Newark, DE, United States 
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Chai GMT, Broderick CA, O'Reilly EP, Othaman Z, Jin SR, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO, Sweeney SJ, Hosea TJC. Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso> Eg Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/9/094015  0.529
2014 Dongmo P, Hartshorne M, Cristiani T, Jablonski ML, Bomberger C, Isheim D, Seidman DN, Taheri ML, Zide J. Observation of self-assembled core-shell structures in epitaxially embedded TbErAs nanoparticles. Small (Weinheim An Der Bergstrasse, Germany). 10: 4920-5. PMID 25104265 DOI: 10.1002/Smll.201400891  0.514
2013 Zhong Y, Dongmo PB, Gong L, Law S, Chase B, Wasserman D, Zide JMO. Degenerately doped ingabias: Si as a highly conductive and transparent contact material in the infrared range Optical Materials Express. 3: 1197-1204. DOI: 10.1364/Ome.3.001197  0.509
2012 Ramu AT, Clinger LE, Dongmo PB, Imamura JT, Zide JMO, Bowers JE. Incompatibility of standard III-V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3701951  0.341
2012 Marko IP, Batool Z, Hild K, Jin SR, Hossain N, Hosea TJC, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO, Sweeney SJ. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters. 101: 221108. DOI: 10.1063/1.4768532  0.479
2012 Kudrawiec R, Kopaczek J, Misiewicz J, Walukiewicz W, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO. Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance Journal of Applied Physics. 112: 113508. DOI: 10.1063/1.4768262  0.49
2012 Dongmo P, Zhong Y, Attia P, Bomberger C, Cheaito R, Ihlefeld JF, Hopkins PE, Zide J. Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs Journal of Applied Physics. 112. DOI: 10.1063/1.4761996  0.497
2012 Zhong Y, Dongmo PB, Petropoulos JP, Zide JMO. Effects of molecular beam epitaxy growth conditions on composition and optical properties of InxGa1−xBiyAs1−y Applied Physics Letters. 100: 112110. DOI: 10.1063/1.3695066  0.542
2011 Petropoulos JP, Cristiani TR, Dongmo PB, Zide JM. A simple thermodynamic model for the doping and alloying of nanoparticles. Nanotechnology. 22: 245704. PMID 21508499 DOI: 10.1088/0957-4484/22/24/245704  0.705
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