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Michael Shur - Publications

Affiliations: 
1967 Physics A. F. Ioffe Institute of Physics and Technology  
 1977-1978 Wayne State University, Detroit, MI, United States 
 1978-1979 Oakland University, Rochester Hills, MI, United States 
 1979-1989 Electrical Engineering University of Minnesota, Twin Cities, Minneapolis, MN 
 1989-1996 University of Virginia, Charlottesville, VA 
 1996- Solid State Electronics Rensselaer Polytechnic Institute, Troy, NY, United States 
Website:
https://ecse.rpi.edu/people/faculty/michael-shur
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Year Citation  Score
2020 Nikoobakht B, Hansen RP, Zong Y, Agrawal A, Shur M, Tersoff J. High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs). Science Advances. 6: eaba4346. PMID 32851164 DOI: 10.1126/Sciadv.Aba4346  0.354
2020 Liu X, Ytterdal T, Shur M. Plasmonic FET Terahertz Spectrometer Ieee Access. 8: 56039-56044. DOI: 10.1109/Access.2020.2982275  0.377
2020 Aizin GR, Mikalopas J, Shur M. Plasmonic instabilities in two-dimensional electron channels of variable width Physical Review B. 101. DOI: 10.1103/Physrevb.101.245404  0.379
2020 Ryzhii V, Ryzhii M, Otsuji T, E Karasik V, Leiman V, Mitin V, Shur MS. Multiple graphene-layer-based heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injection Semiconductor Science and Technology. 35: 085023. DOI: 10.1088/1361-6641/Ab9398  0.356
2020 Ryzhii V, Otsuji T, Shur M. Graphene based plasma-wave devices for terahertz applications Applied Physics Letters. 116: 140501. DOI: 10.1063/1.5140712  0.335
2019 Ponomarev DS, Lavrukhin DV, Yachmenev AE, Khabibullin RA, Semenikhin IE, Vyurkov VV, Marem’yanin KV, Gavrilenko VI, Ryzhii M, Shur M, Otsuji T, Ryzhii V. Sub-terahertz FET detector with self-assembled Sn-nanothreads Journal of Physics D: Applied Physics. 53: 075102. DOI: 10.1088/1361-6463/Ab588F  0.352
2019 Shur M. Wide band gap semiconductor technology: State-of-the-art Solid-State Electronics. 155: 65-75. DOI: 10.1016/J.Sse.2019.03.020  0.388
2018 Ryzhii V, Otsuji T, Ryzhii M, Ponomarev DS, Karasik VE, Leiman VG, Mitin V, Shur MS. Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures Semiconductor Science and Technology. 33: 124010. DOI: 10.1088/1361-6641/Aae9B2  0.327
2018 Shur M, Rudin S, Rupper G, Ivanov T. p-Diamond as candidate for plasmonic terahertz and far infrared applications Applied Physics Letters. 113: 253502. DOI: 10.1063/1.5053091  0.362
2017 Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Shur M, Balandin AA. Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. Nano Letters. 17: 377-383. PMID 28073263 DOI: 10.1021/Acs.Nanolett.6B04334  0.573
2017 Shur M, Rupper G, Rudin S. Ultimate limits for highest modulation frequency and shortest response time of field effect transistor Proceedings of Spie. 10194. DOI: 10.1117/12.2261105  0.377
2017 Shatalov M, Jain R, Saxena T, Dobrinsky A, Shur M. Development of Deep UV LEDs and Current Problems in Material and Device Technology Semiconductors and Semimetals. 96: 45-83. DOI: 10.1016/Bs.Semsem.2016.08.002  0.366
2016 Stolyarov MA, Liu G, Bloodgood MA, Aytan E, Jiang C, Samnakay R, Salguero TT, Nika DL, Rumyantsev SL, Shur MS, Bozhilov KN, Balandin AA. Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale. PMID 27531559 DOI: 10.1039/C6Nr03469A  0.483
2016 Muraviev A, Gutin A, Rupper G, Rudin S, Shen X, Yamaguchi M, Aizin G, Shur M. New optical gating technique for detection of electric field waveforms with subpicosecond resolution. Optics Express. 24: 12730-12739. PMID 27410292 DOI: 10.1364/Oe.24.012730  0.334
2016 Coquillat D, Nodjiadjim V, Blin S, Konczykowska A, Dyakonova N, Consejo C, Nouvel P, Pènarier A, Torres J, But D, Ruffenach S, Teppe F, Riet M, Muraviev A, Gutin A, ... Shur M, et al. High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors International Journal of High Speed Electronics and Systems. 25: 1640011. DOI: 10.1142/S0129156416400115  0.351
2016 Shur M, Rudin S, Rupper G, Yamaguchi M, Shen X, Muraviev A. Subpicosecond Nonlinear Plasmonic Response Probed by Femtosecond Optical Pulses International Journal of High Speed Electronics and Systems. 25: 1640003. DOI: 10.1142/S0129156416400036  0.344
2016 Shur M, Rudin S, Rupper G, Muraviev A. Novel ultrasensitive plasmonic detector of terahertz pulses enhanced by femtosecond optical pulses Proceedings of Spie. 9934. DOI: 10.1117/12.2238067  0.321
2016 Rudin S, Rupper G, Reed ML, Shur M. Plasmonic response of partially gated field effect transistors Proceedings of Spie. 9934. DOI: 10.1117/12.2238036  0.413
2016 Shur M. Recent developments in terahertz sensing technology Proceedings of Spie. 9836. DOI: 10.1117/12.2218682  0.356
2016 Saxena T, Shur M. Silicon-on-Insulator Photoimpedance Sensor Using Capacitance Dispersion Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2576458  0.327
2016 Aizin GR, Mikalopas J, Shur M. Current-driven plasmonic boom instability in three-dimensional gated periodic ballistic nanostructures Physical Review B. 93. DOI: 10.1103/Physrevb.93.195315  0.32
2016 Podlipskas, Aleksiejunas R, Kadys A, Mickevičius J, Jurkevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/14/145110  0.321
2016 Mickevičius J, Jurkevičius J, Kadys A, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells Aip Advances. 6. DOI: 10.1063/1.4947574  0.327
2016 Sinha R, Karabiyik M, Ahmadivand A, Al-Amin C, Vabbina PK, Shur M, Pala N. Tunable, Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators Journal of Infrared, Millimeter, and Terahertz Waves. 37: 230-242. DOI: 10.1007/S10762-015-0227-8  0.308
2016 Karabiyik M, Ahmadivand A, Sinha R, Al-Amin C, Vabbina PK, Kaya S, Rupper G, Rudin S, Shur M, Pala N. Plasmonic properties of asymmetric dual grating gate plasmonic crystals Physica Status Solidi (B) Basic Research. 253: 671-675. DOI: 10.1002/Pssb.201552609  0.337
2015 Saxena T, Shur M, Nargelas S, Podlipskas Ž, Aleksiejūnas R, Tamulaitis G, Shatalov M, Yang J, Gaska R. Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content. Optics Express. 23: 19646-55. PMID 26367622 DOI: 10.1364/Oe.23.019646  0.336
2015 Shur M. Terahertz Sensing Technology International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415500019  0.335
2015 Shur M. Terahertz electronics for sensing and imaging applications Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2085442  0.348
2015 Otsuji T, Satou A, Watanabe T, Boubanga-Tombet SA, Ryzhii M, Dubinov A, Popov VV, Mitin V, Shur M, Ryzhii V. Recent advances in the research toward graphene-based terahertz lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2079411  0.331
2015 Chao PC, Chu K, Creamer C, Diaz J, Yurovchak T, Shur M, Kallaher R, McGray C, Via GD, Blevins JD. Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480756  0.406
2015 Liu G, Rumyantsev SL, Jiang C, Shur MS, Balandin AA. Selective Gas Sensing with h-BN Capped MoS2 Heterostructure Thin-Film Transistors Ieee Electron Device Letters. 36: 1202-1204. DOI: 10.1109/Led.2015.2481388  0.474
2015 Rumyantsev SL, Jiang C, Samnakay R, Shur MS, Balandin AA. 1/f noise characteristics of MoS2 thin-film transistors: Comparison of single and multilayer structures Ieee Electron Device Letters. 36: 517-519. DOI: 10.1109/Led.2015.2412536  0.537
2015 Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Reduced 1/f noise in high-mobility BN-graphene-BN heterostructure transistors Device Research Conference - Conference Digest, Drc. 2015: 153-154. DOI: 10.1109/DRC.2015.7175601  0.499
2015 Mickevičius J, Jurkevičius J, Kadys A, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/27/275105  0.333
2015 Ryzhii V, Otsuji T, Ryzhii M, Mitin V, Shur MS. Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors Journal of Applied Physics. 118. DOI: 10.1063/1.4936265  0.306
2015 Saxena T, Nargelas S, Mickevičius J, Kravcov O, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers Journal of Applied Physics. 118. DOI: 10.1063/1.4929499  0.338
2015 Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4926872  0.612
2015 Rudin S, Rupper G, Shur M. Ultimate response time of high electron mobility transistors Journal of Applied Physics. 117. DOI: 10.1063/1.4919706  0.365
2015 Jiang C, Rumyantsev SL, Samnakay R, Shur MS, Balandin AA. High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics Journal of Applied Physics. 117. DOI: 10.1063/1.4906496  0.528
2015 Samnakay R, Jiang C, Rumyantsev SL, Shur MS, Balandin AA. Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Applied Physics Letters. 106. DOI: 10.1063/1.4905694  0.553
2015 Rupper G, Rudin S, Shur M. Response of plasmonic terahertz detectors to amplitude modulated signals Solid-State Electronics. 111: 76-79. DOI: 10.1016/J.Sse.2015.05.035  0.365
2015 Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M. Novel AlInN/GaN integrated circuits operating up to 500 °C Solid-State Electronics. 113: 22-27. DOI: 10.1016/J.Sse.2015.05.007  0.347
2015 Gutin A, Ytterdal T, Muraviev A, Shur M. Modelling effect of parasitics in plasmonic FETs Solid-State Electronics. 104: 75-78. DOI: 10.1016/J.Sse.2014.10.013  0.347
2014 Saxena T, Rumyantsev S, Dutta P, Shur M. Frequency tunable photo-impedance sensor Proceedings of Spie - the International Society For Optical Engineering. 9220. DOI: 10.1117/12.2062457  0.313
2014 Otsuji T, Ryzhii V, Tombet SAB, Watanabe T, Satou A, Ryzhii M, Dubinov A, Aleshkin VY, Popov V, Mitin V, Shur M. Graphene plasmonic heterostructures for new types of terahertz lasers Proceedings of Spie - the International Society For Optical Engineering. 9199. DOI: 10.1117/12.2061510  0.342
2014 Sinha R, Karabiyik M, Al-Amin C, Vabbina PK, Shur M, Pala N. Microdisk resonators for difference frequency generation in THz range Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2050650  0.315
2014 Otsuji T, Shur M. Terahertz plasmonics Ieee Microwave Magazine. 15: 43-50. DOI: 10.1109/Mmm.2014.2355712  0.358
2014 Shur M, Rumyantsev S, Jiang C, Samnakay R, Renteria J, Balandin AA. Selective gas sensing with MoS2 Thin Film Transistors Proceedings of Ieee Sensors. 2014: 55-57. DOI: 10.1109/ICSENS.2014.6984931  0.426
2014 Shatalov M, Sun W, Jain R, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Garrett GA, Rodak LE, Wraback M, Shur M, Gaska R. High power AlGaN ultraviolet light emitters Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/084007  0.321
2014 Saxena T, Rumyantsev SL, Dutta PS, Shur M. CdS based novel photo-impedance light sensor Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/2/025002  0.337
2014 Renteria J, Samnakay R, Rumyantsev SL, Jiang C, Goli P, Shur MS, Balandin AA. Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts Applied Physics Letters. 104. DOI: 10.1063/1.4871374  0.536
2014 Rudin S, Rupper G, Gutin A, Shur M. Theory and measurement of plasmonic terahertz detector response to large signals Journal of Applied Physics. 115. DOI: 10.1063/1.4862808  0.382
2014 Gaevski M, Deng J, Gaska R, Shur M, Simin G. GaN microwave varactors with insulated electrodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 853-856. DOI: 10.1002/Pssc.201300667  0.347
2014 Gaevski M, Deng J, Dobrinsky A, Gaska R, Shur M, Simin G. Static and transient characteristics of GaN power HFETs with low-conducting coating Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 866-870. DOI: 10.1002/Pssc.201300541  0.351
2014 Turin V, Zebrev G, Makarov S, Iñiguez B, Shur M. The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 27: 863-874. DOI: 10.1002/Jnm.1969  0.303
2013 Ryzhii V, Dubinov AA, Otsuji T, Aleshkin VY, Ryzhii M, Shur M. Double-graphene-layer terahertz laser: concept, characteristics, and comparison. Optics Express. 21: 31567-77. PMID 24514730 DOI: 10.1364/Oe.21.031567  0.319
2013 Knap W, Rumyantsev S, Vitiello MS, Coquillat D, Blin S, Dyakonova N, Shur M, Teppe F, Tredicucci A, Nagatsuma T. Nanometer size field effect transistors for terahertz detectors. Nanotechnology. 24: 214002. PMID 23618776 DOI: 10.1088/0957-4484/24/21/214002  0.308
2013 But DB, Diakonova N, Drexler C, Drachenko O, Romanov K, Golenkov OG, Sizov FF, Gutin A, Shur M, Ganichev SD, Knap W. The dynamic range of THz broadband FET detectors Proceedings of Spie - the International Society For Optical Engineering. 8846. DOI: 10.1117/12.2024226  0.361
2013 Rudin S, Rupper G, Gutin A, Shur M. Response of plasmonic terahertz detector to large signals: Theory and experiment Proceedings of Spie - the International Society For Optical Engineering. 8716. DOI: 10.1117/12.2015330  0.356
2013 Gutin A, Nahar S, Hella M, Shur M. Modeling terahertz plasmonic Si FETs with SPICE Ieee Transactions On Terahertz Science and Technology. 3: 545-549. DOI: 10.1109/Tthz.2013.2262799  0.333
2013 Jahan F, Yang YH, Gaevski M, Deng J, Gaska R, Shur M, Simin G. 2-to 20-GHz switch using III-nitride capacitively coupled contact varactors Ieee Electron Device Letters. 34: 208-210. DOI: 10.1109/Led.2012.2231396  0.353
2013 Hindle F, Shur M, Abbot D, Ozanyan KB. Guest Editorial: THz sensing: Materials, devices, and systems Ieee Sensors Journal. 13: 7. DOI: 10.1109/Jsen.2012.2226647  0.347
2013 Gutin A, Ytterdal T, Kachorovskii V, Muraviev A, Shur M. THz SPICE for modeling detectors and nonquadratic response at large input signal Ieee Sensors Journal. 13: 55-62. DOI: 10.1109/Jsen.2012.2224105  0.316
2013 Shur M, Muraviev AV, Rumyantsev SL, Knap W, Liu G, Balandin AA. Plasmonic and bolometric terahertz graphene sensors Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688554  0.431
2013 Liu G, Rumyantsev SL, Balandin AA, Shur MS. Surface and volume 1/f noise in multi-layer graphene 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013. DOI: 10.1109/ICNF.2013.6578991  0.475
2013 Simin G, Jahan F, Yang J, Gaevski M, Hu X, Deng J, Gaska R, Shur M. III-nitride microwave control devices and ICs Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074008  0.397
2013 Rumyantsev SL, Coquillat D, Ribeiro R, Goiran M, Knap W, Shur MS, Balandin AA, Levinshtein ME. The effect of a transverse magnetic field on 1/f noise in graphene Applied Physics Letters. 103. DOI: 10.1063/1.4826644  0.497
2013 Muraviev AV, Rumyantsev SL, Liu G, Balandin AA, Knap W, Shur MS. Plasmonic and bolometric terahertz detection by graphene field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826139  0.515
2013 Mickevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Correlation between carrier localization and efficiency droop in AlGaN epilayers Applied Physics Letters. 103. DOI: 10.1063/1.4813259  0.315
2013 Kachorovskii VY, Rumyantsev SL, Knap W, Shur M. Performance limits for field effect transistors as terahertz detectors Applied Physics Letters. 102. DOI: 10.1063/1.4809672  0.344
2013 Hossain MZ, Rumyantsev S, Shur MS, Balandin AA. Reduction of 1/f noise in graphene after electron-beam irradiation Applied Physics Letters. 102. DOI: 10.1063/1.4802759  0.534
2013 Liu G, Rumyantsev S, Shur MS, Balandin AA. Origin of 1/f noise in graphene multilayers: Surface vs. volume Applied Physics Letters. 102. DOI: 10.1063/1.4794843  0.522
2013 Dmitriev A, Shur M. Lateral modulation doping of two-dimensional electron or hole gas Physica Status Solidi (B) Basic Research. 250: 318-323. DOI: 10.1002/Pssb.201248222  0.319
2012 Chivukula VS, Ciplys D, Kim JH, Rimeika R, Xu JM, Shur MS. Surface acoustic wave response to optical absorption by graphene composite film. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 59: 265-70. PMID 24626034 DOI: 10.1109/TUFFC.2012.2186  0.446
2012 Rumyantsev S, Liu G, Shur MS, Potyrailo RA, Balandin AA. Selective gas sensing with a single pristine graphene transistor. Nano Letters. 12: 2294-8. PMID 22506589 DOI: 10.1021/Nl3001293  0.524
2012 Shatalov M, Sun W, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Shur M, Gaska R, Moe C, Garrett G, Wraback M. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% Applied Physics Express. 5. DOI: 10.1143/Apex.5.082101  0.316
2012 Shatalov M, Lunev A, Hu X, Bilenko O, Gaska I, Sun W, Yang J, Dobrinsky A, Bilenko Y, Gaska R, Shur M. Performance and applications of deep UV LED International Journal of High Speed Electronics and Systems. 21. DOI: 10.1142/S0129156412500115  0.326
2012 Mitin V, Ramaswamy R, Wang K, Choi JK, Pakmehr M, Muraviev A, Shur M, Gaska R, Pogrebnyak V, Sergeev A. THz detectors based on heating of two-dimensional electron gas in disordered nitride heterostructures Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919267  0.336
2012 Balandin AA, Rumyantsev S, Liu G, Shur MS, Potyrailo RA. Selective gas sensing with a single graphene-on-silicon transistor 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243283  0.476
2012 Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective gas sensing by graphene Proceedings of Ieee Sensors. DOI: 10.1109/ICSENS.2012.6411434  0.44
2012 Mickevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Internal quantum efficiency in AlGaN with strong carrier localization Applied Physics Letters. 101. DOI: 10.1063/1.4767657  0.301
2012 Gutin A, Kachorovskii V, Muraviev A, Shur M. Plasmonic terahertz detector response at high intensities Journal of Applied Physics. 112: 014508. DOI: 10.1063/1.4732138  0.355
2012 Liu G, Rumyantsev S, Shur M, Balandin AA. Graphene thickness-graded transistors with reduced electronic noise Applied Physics Letters. 100: 033103. DOI: 10.1063/1.3676277  0.585
2012 Jahan F, Gaevski M, Deng J, Gaska R, Shur M, Simin G. RF power limiter using capacitively-coupled contacts III-nitride varactor Electronics Letters. 48: 1480-1481. DOI: 10.1049/El.2012.3428  0.363
2011 Hossain MZ, Rumyantsev SL, Shahil KM, Teweldebrhan D, Shur M, Balandin AA. Low-frequency current fluctuations in "graphene-like" exfoliated thin-films of bismuth selenide topological insulators. Acs Nano. 5: 2657-63. PMID 21413716 DOI: 10.1021/Nn102861D  0.592
2011 Hadi WA, Shur M, Eastman LF, O'Leary SK. Steady-state and transient electron transport in ZnO: Recent progress Materials Research Society Symposium Proceedings. 1327: 1-6. DOI: 10.1557/Opl.2011.851  0.34
2011 Liu G, Rumyantsev S, Stillman W, Shur M, Balandin AA. 1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1357  0.59
2011 Hossain MZ, Rumyantsev SL, Shahil KMF, Teweldebrhan D, Shur M, Balandin AA. Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1349  0.565
2011 Bhalerao S, Koudymov A, Shur M, Ytterdal T, Jackson W, Taussig C. Compact capacitance model for printed thin film transistors with non-ideal contacts International Journal of High Speed Electronics and Systems. 20: 801-813. DOI: 10.1142/S0129156411007069  0.365
2011 Simin G, Wang J, Khan B, Yang J, Sattu A, Gaska R, Shur M. Novel approaches to microwave switching devices using nitride technology International Journal of High Speed Electronics and Systems. 20: 219-227. DOI: 10.1142/S0129156411006556  0.369
2011 LIU G, STILLMAN W, RUMYANTSEV S, SHUR M, BALANDIN AA. LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES International Journal of High Speed Electronics and Systems. 20: 161-170. DOI: 10.1142/S0129156411006490  0.589
2011 Rumyantsev S, Stillman W, Shur M, Heeg T, Schlom DG, Koveshnikov S, Kambhampati R, Tokranov V, Oktyabrsky S. Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric International Journal of High Speed Electronics and Systems. 20: 105-113. DOI: 10.1142/S0129156411006441  0.396
2011 Stillman W, Donais C, Rumyantsev S, Shur M, Veksler D, Hobbs C, Smith C, Bersuker G, Taylor W, Jammy R. Silicon finfets as detectors of terahertz and sub-terahertz radiation International Journal of High Speed Electronics and Systems. 20: 27-42. DOI: 10.1142/S0129156411006374  0.31
2011 Ramaswamy R, Wang K, Stier A, Muraviev A, Strasser G, Markelz A, Shur M, Gaska R, Sergeev A, Mitin V. 2DEG GaN hot electron microbolometers and quantum cascade lasers for THz heterodyne sensing Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.883329  0.405
2011 Shur M. Silicon and nitride FETs for THz sensing Proceedings of Spie. 8031. DOI: 10.1117/12.883309  0.402
2011 Sattu AK, Yang J, Gaska R, Khan MB, Shur M, Simin G. Small- and large-signal performance of III-nitride RF switches with hybrid fast/slow gate design Ieee Microwave and Wireless Components Letters. 21: 305-307. DOI: 10.1109/Lmwc.2011.2138686  0.339
2011 Sattu A, Deng J, Billingsley D, Yang J, Shur M, Gaska R, Simin G. Enhanced power and breakdown in III-N RF switches with a slow gate Ieee Electron Device Letters. 32: 749-751. DOI: 10.1109/Led.2011.2126557  0.349
2011 Rumyantsev SL, Liu G, Shur MS, Balandin AA. Observation of the memory steps in graphene at elevated temperatures Applied Physics Letters. 98: 222107. DOI: 10.1063/1.3596441  0.481
2011 Sattu A, Billingsley D, Deng J, Yang J, Simin G, Shur M, Gaska R. Low-loss AlInN/GaN microwave switch Electronics Letters. 47: 863-865. DOI: 10.1049/El.2011.1010  0.347
2011 Young CD, Veksler D, Rumyantsev S, Huang J, Park H, Taylor W, Shur M, Bersuker G. Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization Microelectronic Engineering. 88: 1255-1258. DOI: 10.1016/J.Mee.2011.03.109  0.325
2011 Billingsley D, Yang J, Gaska R, Shur M. Migration-enhanced metalorganic chemical vapor deposition of Al xIn1-xN/GaN heterostructures (x>0.75) on c-plane sapphire Journal of Crystal Growth. 327: 98-101. DOI: 10.1016/J.Jcrysgro.2011.06.015  0.304
2010 Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 395302. PMID 21403224 DOI: 10.1088/0953-8984/22/39/395302  0.588
2010 Shatalov M, Sun W, Bilenko Y, Sattu A, Hu X, Deng J, Yang J, Shur M, Moe C, Wraback M, Gaska R. Large chip high power deep ultraviolet light-emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.062101  0.369
2010 Sattu A, Yang J, Shur M, Gaska R, Simin G. AlGaN/GaN microwave switch with hybrid slow and fast gate design Ieee Electron Device Letters. 31: 1389-1391. DOI: 10.1109/Led.2010.2073676  0.371
2010 Chivukula V, Ciplys D, Sereika A, Shur M, Yang J, Gaska R. AlGaN based highly sensitive radio-frequency UV sensor Applied Physics Letters. 96. DOI: 10.1063/1.3405692  0.315
2010 Sun W, Shatalov M, Deng J, Hu X, Yang J, Lunev A, Bilenko Y, Shur M, Gaska R. Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power Applied Physics Letters. 96. DOI: 10.1063/1.3302466  0.361
2010 Shur M. Plasma wave terahertz electronics Electronics Letters. 46: S18. DOI: 10.1049/El.2010.8457  0.319
2010 Deng J, Yang J, Hu X, Gaska R, Khan B, Simin G, Shur M. Insertion loss and linearity of III-nitride microwave switches Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2423-2425. DOI: 10.1002/Pssc.200983898  0.36
2010 Hossain MZ, Rumyantsev SL, Teweldebrhan D, Shahil KMF, Shur M, Balandin AA. 1/f noise in conducting channels of topological insulator materials Physica Status Solidi (a). 208: 144-146. DOI: 10.1002/Pssa.201026604  0.608
2009 Simin G, Shur MS, Gaska R. 5-Terminal THz GaN based transistor with field- and space-charge control electrodes International Journal of High Speed Electronics and Systems. 19: 7-14. DOI: 10.1142/S0129156409006047  0.305
2009 Simin G, Khan B, Wang J, Koudymov A, Gaevski M, Jain R, Yang J, Hu X, Gaska R, Shur M. Multigate GaN RF switches with capacitively coupled contacts Ieee Electron Device Letters. 30: 895-897. DOI: 10.1109/Led.2009.2025675  0.341
2009 Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480. DOI: 10.1109/Led.2009.2017284  0.36
2009 Shao Q, Liu G, Teweldebrhan D, Balandin AA, Rumyantsev S, Shur MS, Yan D. Flicker Noise in Bilayer Graphene Transistors Ieee Electron Device Letters. 30: 288-290. DOI: 10.1109/Led.2008.2011929  0.548
2009 Liu G, Stillman W, Rumyantsev S, Shao Q, Shur M, Balandin AA. Low-frequency electronic noise in the double-gate single-layer graphene transistors Applied Physics Letters. 95: 033103. DOI: 10.1063/1.3180707  0.602
2009 Shatalov M, Yang J, Sun W, Kennedy R, Gaska R, Liu K, Shur M, Tamulaitis G. Efficiency of light emission in high aluminum content AlGaN quantum wells Journal of Applied Physics. 105. DOI: 10.1063/1.3103321  0.317
2009 Simin G, Koudymov A, Yang Z, Hu X, Yang J, Shur M, Gaska R. Cryogenic RF switch using III-nitride MOSHFETs Electronics Letters. 45: 207-208. DOI: 10.1049/El:20092562  0.336
2008 Koudymov A, Shur M. Non-ideal current transport in heterostructure field effect transistors International Journal of High Speed Electronics and Systems. 18: 935-947. DOI: 10.1142/S0129156408005898  0.398
2008 Yang Z, Wang J, Hu X, Yang J, Simin G, Shur M, Gaska R. Current crowding in high performance low-loss HFET RF switches Ieee Electron Device Letters. 29: 15-17. DOI: 10.1109/Led.2007.911621  0.368
2008 Popov VV, Koudymov AN, Shur M, Polischuk OV. Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel Journal of Applied Physics. 104. DOI: 10.1063/1.2955731  0.365
2008 Sawyer S, Rumyantsev S, Shur M. Degradation of AlGaN-based ultraviolet light emitting diodes Solid-State Electronics. 52: 968-972. DOI: 10.1016/J.Sse.2008.01.027  0.565
2006 Sawyer S, Rumyantsev SL, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Current and optical noise of GaN/AlGaN light emitting diodes Journal of Applied Physics. 100. DOI: 10.1063/1.2204355  0.542
2005 Satou A, Khmyrova I, Chaplik A, Ryzhii V, Shur M. Spectrum of Plasma Oscillations in Slot Diode with Two-Dimensional Electron Channel Japanese Journal of Applied Physics. 44: 2592-2595. DOI: 10.7567/Ssdm.2004.P8-11L  0.306
2005 Dyakonov M, Shur MS. Current instability and plasma waves generation in ungated two-dimensional electron layers Applied Physics Letters. 87: 111501. DOI: 10.1142/S0129156406003771  0.359
2005 Rumyantsev SL, Sawyer S, Pala N, Shur MS, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low frequency noise of light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5844: 75-85. DOI: 10.1117/12.608559  0.543
2005 Rumyantsev SL, Sawyer S, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low-frequency noise of GaN-based ultraviolet light-emitting diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1928310  0.539
2004 Simin G, Khan MA, Shur MS, Gaska R. Insulated Gate Iii-N Heterostructure Field-Effect Transistors International Journal of High Speed Electronics and Systems. 14: 197-224. DOI: 10.1142/S0129156404002302  0.347
2004 Sawyer S, Rumyantsev SL, Pala N, Shur MS, Bilenko Y, Gaska R, Kosterin PV, Salzberg BM. Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes International Journal of High Speed Electronics and Systems. 14: 702-707. DOI: 10.1109/Lechpd.2004.1549675  0.529
2003 Simin G, Adivarahan V, Fatima H, Saygi S, Koudymov A, He X, Shuai W, Rai S, Yang J, Khan MA, Tarakji A, Deng J, Gaska R, Shur MS. Insulated gate 111-N devices and ICs 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 398-399. DOI: 10.1109/ISDRS.2003.1272152  0.324
2003 Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Solid-State Electronics. 47: 1099-1104. DOI: 10.1016/S0038-1101(02)00475-6  0.397
2002 Ryzhii V, Shur M. Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plasma Oscillations in High-Electron-Mobility Transistors Japanese Journal of Applied Physics. 41: L922-L924. DOI: 10.1143/Jjap.41.L922  0.326
2002 Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS Fluctuation and Noise Letters. 2. DOI: 10.1142/S0219477502000968  0.334
2002 Rumyantsev SL, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Yang JW. Low Frequency Noise in Gallium Nitride Field Effect Transistors International Journal of High Speed Electronics and Systems. 12: 449-458. DOI: 10.1142/S012915640200137X  0.305
2002 Ryzhii V, Shur M. Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistors Semiconductor Science and Technology. 17: 1168-1171. DOI: 10.1088/0268-1242/17/11/306  0.357
2002 Ryzhii V, Khmyrova I, Satou A, Vaccaro PO, Aida T, Shur M. Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation Journal of Applied Physics. 92: 5756-5760. DOI: 10.1063/1.1510596  0.346
2002 Ryzhii V, Khmyrova I, Shur M. Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations Journal of Applied Physics. 91: 1875-1881. DOI: 10.1063/1.1431436  0.335
2002 Carlos Rojo J, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Journal of Crystal Growth. 240: 508-512. DOI: 10.1016/S0022-0248(02)01078-3  0.302
2001 Zhang JP, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Yang JW, Simin G, Khan MA, Shur M, Gaska R. Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes Japanese Journal of Applied Physics. 40: 921. DOI: 10.1143/Jjap.40.L921  0.311
2001 Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Ivanov PA, Khan MA, Simin G, Yang J, Hu X, Tarakji A, Gaska R. Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors Fluctuation and Noise Letters. 1. DOI: 10.1142/S0219477501000469  0.319
2001 Gaska R, Shur MS, Hu X, Yang JW, Tarakji A, Simin G, Khan A, Deng J, Werner T, Rumyantsev S, Pala N. Highly doped thin-channel GaN-metal-semiconductor field-effect transistors Applied Physics Letters. 78: 769-771. DOI: 10.1063/1.1344577  0.301
2001 Contreras S, Knap W, Frayssinet E, Sadowski ML, Goiran M, Shur M. High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction Journal of Applied Physics. 89: 1251-1255. DOI: 10.1063/1.1328788  0.354
2001 Zhang JP, Kuokstis E, Fareed Q, Wang HM, Yang JW, Simin G, Khan MA, Tamulaitis G, Kurilcik G, Jursenas S, Zukauskas A, Gaska R, Shur M. Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters Physica Status Solidi (a). 188: 95-99. DOI: 10.1002/1521-396X(200111)188:1<95::Aid-Pssa95>3.0.Co;2-Q  0.313
2000 Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 612-618. DOI: 10.1557/S109257830000483X  0.356
2000 Necliudov PV, Shur M, Gundlach DJ, Jackson TN. Electrical Instabilities and 1/f Noise in Organic Pentacene Thin Film Transistors Mrs Proceedings. 660. DOI: 10.1557/Proc-660-Jj7.10  0.385
2000 Wang L, Fjeldly TA, Iniguez B, Slade HC, Shur M. Self-heating and kink effects in a-Si:H thin film transistors Ieee Transactions On Electron Devices. 47: 387-397. DOI: 10.1109/16.822285  0.314
2000 Chitnis A, Kumar A, Shatalov M, Adivarahan V, Lunev A, Yang JW, Simin G, Khan MA, Gaska R, Shur M. High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells Applied Physics Letters. 77: 3800-3802. DOI: 10.1063/1.1331084  0.356
2000 Adivarahan V, Simin G, Yang JW, Lunev A, Khan MA, Pala N, Shur M, Gaska R. SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors Applied Physics Letters. 77: 863-865. DOI: 10.1063/1.1306647  0.421
2000 Khan MA, Hu X, Tarakji A, Simin G, Yang J, Gaska R, Shur MS. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. 77: 1339-1341. DOI: 10.1063/1.1290269  0.313
2000 Ryzhii V, Khmyrova I, Shur M. Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors Journal of Applied Physics. 88: 2868-2871. DOI: 10.1063/1.1287759  0.329
2000 Khan MA, Yang JW, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur MS, Beaumont B, Teisseire M, Neu G. GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates Applied Physics Letters. 76: 3807-3809. DOI: 10.1063/1.126788  0.321
2000 Pala N, Gaska R, Rumyantsev S, Shur MS, Asif Khan M, Hu X, Simin G, Yang J. Low-frequency noise in AlGaN/GaN MOSHFETs Electronics Letters. 36: 268-270. DOI: 10.1049/El:20000171  0.303
1999 Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.9  0.43
1999 Tager AA, Gaska R, Avrutsky IA, Fay M, Chik H, SpringThorpe A, Eicher S, Xu JM, Shur M. Ion-implanted GaAs-InGaAs lateral current injection laser Ieee Journal On Selected Topics in Quantum Electronics. 5: 664-672. DOI: 10.1109/2944.788433  0.701
1999 Lü JQ, Pala N, Shur M, Hurt MJ, Peatman WCB. High temperature performance of ion implanted hetero-dimensional JFETs Electronics Letters. 35: 845-846. DOI: 10.1049/El:19990562  0.341
1998 Chen Q, Yang J, Gaska R, Khan M, Shur M, Sullivan G, Sailor A, Higgings J, Ping A, Adesida I. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor Ieee Electron Device Letters. 19: 44-46. DOI: 10.1109/55.658598  0.306
1998 Levinshtein ME, Rumyantsev SL, Gaska R, Yang JW, Shur MS. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise Applied Physics Letters. 73: 1089-1091. DOI: 10.1063/1.122093  0.31
1998 Peatman W, Tsai R, Weikle R, Shur M. Microwave operation of multi-channel 2D MESFET Electronics Letters. 34: 1029. DOI: 10.1049/El:19980706  0.327
1997 Shur MS. GaN And Related Materials For High Power Applications Mrs Proceedings. 483. DOI: 10.1557/PROC-483-15  0.306
1997 Gaska R, Yang JW, Osinsky A, Bykhovski AD, Shur MS. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 71: 3673-3675. DOI: 10.1063/1.120477  0.302
1997 Alause H, Knap W, Azema SC, Bluet J, Sadowski M, Huant S, Young J, Khan MA, Chen Q, Shur M. Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures Materials Science and Engineering: B. 46: 79-83. DOI: 10.1016/S0921-5107(96)01936-8  0.304
1997 Khan MA, Chen Q, Shur MS, Dermott BT, Higgins JA, Burm J, Schaff WJ, Eastman LF. GaN based heterostructure for high power devices Solid-State Electronics. 41: 1555-1559. DOI: 10.1016/S0038-1101(97)00104-4  0.3
1996 Ytterdal T, Hurt M, Shur M, Park H, Tsai R, Peatman WCB. High-temperature characteristics of 2-D MESFET's Ieee Electron Device Letters. 17: 214-216. DOI: 10.1109/55.491833  0.365
1996 Peatman WCB, Tsai R, Ytterdal T, Hurt M, Park H, Gonzales J, Shur M. Sub-half-micrometer width 2-D MESFET Ieee Electron Device Letters. 17: 40-42. DOI: 10.1109/55.484117  0.392
1996 Tsai R, Schuermeyer F, Peatman W, Shur M. The optoelectronic response of a laterally contacted 2-D MESFET Ieee Transactions On Electron Devices. 43: 2300-2301. DOI: 10.1109/16.544424  0.332
1996 Dyakonov M, Shur M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid Ieee Transactions On Electron Devices. 43: 380-387. DOI: 10.1109/16.485650  0.376
1996 Hurt M, Peatman W, Tsai R, Ytterdal T, Shur M, Moon B. Ion-implanted 0.4 [micro sign]m wide 2-D MESFET for low power electronics Electronics Letters. 32: 772. DOI: 10.1049/El:19960477  0.339
1996 Shur M, Gelmont B, Khan MA. Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN Journal of Electronic Materials. 25: 777-785. DOI: 10.1007/Bf02666636  0.353
1995 Khan MA, Chen Q, Sun CJ, Yang JW, Shur MS. Recent Progress in Gan Based Field Effect Transistors Mrs Proceedings. 410. DOI: 10.1557/PROC-410-17  0.316
1995 Bykhovski A, Gelmont B, Shur M, Khan A. Current‐voltage characteristics of strained piezoelectric structures Journal of Applied Physics. 77: 1616-1620. DOI: 10.1063/1.358916  0.325
1995 Asif Khan M, Chen Q, Sun CJ, Shur M, Gelmont B. Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition Applied Physics Letters. 67: 1429-1431. DOI: 10.1063/1.114516  0.324
1994 Globus T, Slade HC, Shur M, Hack M. Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current Mrs Proceedings. 336. DOI: 10.1557/Proc-336-823  0.354
1994 Peatman W, Park H, Shur M. Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications Ieee Electron Device Letters. 15: 245-247. DOI: 10.1109/55.294084  0.405
1994 Peatman W, Brown E, Rooks M, Maki P, Grimm W, Shur M. Novel resonant tunneling transistor with high transconductance at room temperature Ieee Electron Device Letters. 15: 236-238. DOI: 10.1109/55.294081  0.403
1994 Martinez E, Shur M, Schuermeyer F. Heterostructure Insulated Gate Field Effect Transistors Operated in Hot Electron Regime Ieee Transactions On Electron Devices. 41: 854-856. DOI: 10.1109/16.285045  0.359
1994 Asif Khan M, Kuznia JN, Olson DT, Schaff WJ, Burm JW, Shur MS. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor Applied Physics Letters. 65: 1121-1123. DOI: 10.1063/1.112116  0.302
1994 Schuermeyer F, Shur M, Martinez E, Cerny C. Gate currents in heterostructure field-effect transistors: contribution by “warm” electrons Materials Science and Engineering: B. 28: 264-267. DOI: 10.1016/0921-5107(94)90061-2  0.382
1993 Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. Physical Review Letters. 71: 2465-2468. PMID 10054687 DOI: 10.1103/Physrevlett.71.2465  0.308
1993 Levinshtein ME, Simin GS, Shur M. Getting to Know Semiconductors American Journal of Physics. 61: 765-765. DOI: 10.1119/1.17164  0.338
1993 Shur M. Future impact of solid-state technology on computers Computer. 26: 103-104. DOI: 10.1109/2.206547  0.321
1993 Fjeldly T, Shur M. Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs Ieee Transactions On Electron Devices. 40: 137-145. DOI: 10.1109/16.249436  0.359
1993 Rho K, Lee K, Shur M, Fjeldly T. Unified quasi-static MOSFET capacitance model Ieee Transactions On Electron Devices. 40: 131-136. DOI: 10.1109/16.249435  0.33
1993 Moon Bj, Lee S, Shur M, Morkoç H, Gopinath A. Measurements of Gate Voltage Dependence of Electron Mobility in δ-Doped HFET's Ieee Transactions On Electron Devices. 40: 1711-1713. DOI: 10.1109/16.231581  0.393
1993 Bykhovski A, Gelmont B, Shur M. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure Journal of Applied Physics. 74: 6734-6739. DOI: 10.1063/1.355070  0.31
1993 Gelmont B, Kim K, Shur M. Monte Carlo simulation of electron transport in gallium nitride Journal of Applied Physics. 74: 1818-1821. DOI: 10.1063/1.354787  0.317
1993 Bykhovski A, Gelmont B, Shur M. Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation Applied Physics Letters. 63: 2243-2245. DOI: 10.1063/1.110540  0.313
1992 Globus T, Shur M, Hack M. Studies of the Stability of Amorphous Silicon Thin Film Transistors Mrs Proceedings. 258. DOI: 10.1557/Proc-258-1013  0.373
1992 Globus T, Shur M, Byun Y, Hack M. New Split FET Technique for Measurements of Source Series Resistance Applied to Amorphous Silicon Thin-Film Transistors Ieee Electron Device Letters. 13: 108-110. DOI: 10.1109/55.144974  0.373
1992 Peatman W, Crowe T, Shur M. A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications Ieee Electron Device Letters. 13: 11-13. DOI: 10.1109/55.144935  0.381
1992 Bhaumik K, Gelmont B, Mattauch R, Shur M. Series impedance of GaAs planar Schottky diodes operated to 500 GHz Ieee Transactions On Microwave Theory and Techniques. 40: 880-885. DOI: 10.1109/22.137393  0.353
1992 Gelmont B, Shur M, Moglesture C. Theory of junction between two-dimensional electron gas and p-type semiconductor Ieee Transactions On Electron Devices. 39: 1216-1222. DOI: 10.1109/16.129106  0.378
1992 Chao PC, Shur M, Lee BR, Kao MY. Breakdown Walkout in AlGaAs/GaAs HEMT’s Ieee Transactions On Electron Devices. 39: 738-740. DOI: 10.1109/16.123504  0.409
1992 Zou J, Shur M, Dong H, Gopinath A. Performance and Optimization of Dipole Heterostructure Field-Effect Transistor Ieee Transactions On Electron Devices. 39: 250-256. DOI: 10.1109/16.121680  0.393
1992 Kanamori M, Jensen G, Shur M, Lee K. Effect of p-i-p/sup +/ buffer on characteristics of n-channel heterostructure field-effect transistors Ieee Transactions On Electron Devices. 39: 226-233. DOI: 10.1109/16.121677  0.323
1992 Gelmont B, Lund B, Kim KS, Jensen GU, Shur M, Fjeldly TA. Monte Carlo simulation of electron transport in mercury cadmium telluride Journal of Applied Physics. 71: 4977-4982. DOI: 10.1063/1.350596  0.318
1992 Schuermeyer F, Martinez E, Shur M, Grider D, Nohava J. Subthreshold and above threshold gate current in heterostructure insulated gate field-effect transistors Electronics Letters. 28: 1024-1026. DOI: 10.1049/El:19920650  0.367
1992 Kelner G, Binari S, Shur M, Sleger K, Palmour J, Kong H. α-SiC buried-gate junction field effect transistors Materials Science and Engineering: B. 11: 121-124. DOI: 10.1016/0921-5107(92)90203-L  0.416
1992 Shur M, Fjeldly T, Ytterdal T, Lee K. Unified MOSFET model Solid-State Electronics. 35: 1795-1802. DOI: 10.1016/0038-1101(92)90263-C  0.345
1992 Byun YH, Shur M, Hack M, Lee K. New analytical polycrystalline-silicon thin-film transistor model for computer aided design and parameter extraction Solid-State Electronics. 35: 655-663. DOI: 10.1016/0038-1101(92)90033-9  0.367
1992 Jones SH, Tait GB, Shur M. Modulated-impurity-concentration transferred-electron devices exhibiting large harmonic frequency content Microwave and Optical Technology Letters. 5: 354-359. DOI: 10.1002/Mop.4650050804  0.382
1991 Schuermeyer F, Shur M, Grider D. Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors Ieee Electron Device Letters. 12: 571-573. DOI: 10.1109/55.119192  0.357
1991 Gelmont B, Shur M, Mattauch RJ. Capacitance-voltage characteristics of microwave Schottky diodes Ieee Transactions On Microwave Theory and Techniques. 39: 857-863. DOI: 10.1109/22.79114  0.387
1991 Jensen GU, Lund B, Fjeldly TA, Shur M. Monte Carlo Simulation of Short-Channel Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 38: 840-851. DOI: 10.1109/16.75214  0.379
1991 Byun Y, Schuermeyer F, Lee K, Shur M, Cook P, Martinez E, Martinez E, Evans K, Stutz C. Quantum-well doped p-channel AlGaAs/GaAs/sub 0.85/Sb/sub 0.15//GaAs heterostructure field-effect transistors Ieee Transactions On Electron Devices. 38: 672-674. DOI: 10.1109/16.75180  0.379
1991 Moon B, Park C, Lee K, Shur M. New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method Ieee Transactions On Electron Devices. 38: 592-602. DOI: 10.1109/16.75171  0.359
1991 Moon B, Park C, Rho K, Lee K, Shur M, Fjeldly T. Analytical model for p-channel MOSFETs Ieee Transactions On Electron Devices. 38: 2632-2646. DOI: 10.1109/16.158685  0.348
1991 Kelner G, Binari S, Shur M, Palmour J. High temperature operation of α-silicon carbide buried-gate junction field-effect transistors Electronics Letters. 27: 1038. DOI: 10.1049/El:19910646  0.354
1991 Jensen GU, Lund B, Fjeldly TA, Shur M. Monte Carlo simulation of semiconductor devices Computer Physics Communications. 67: 1-61. DOI: 10.1016/0010-4655(91)90220-F  0.425
1990 Byun Y, Lee K, Shur M. Unified charge control model and subthreshold current in heterostructure field-effect transistors Ieee Electron Device Letters. 11: 50-53. DOI: 10.1109/55.46928  0.391
1990 Ruden PP, Shur M, Akinwande AI, Baek J, Nohava JC, Grider DE. AlGaAs/InGaAs/GaAs Quantum Well Doped Channel Heterostructure Field Effect Transistors Ieee Transactions On Electron Devices. 37: 2171-2175. DOI: 10.1109/16.59906  0.382
1990 Baek J, Shur M. Mechanism of Negative Transconductance in Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 37: 1917-1921. DOI: 10.1109/16.57145  0.379
1990 Moon BJ, Byun YH, Lee K, Shur M. New Continuous Hetero Structure Field-Effect-Transistor Model And Unified Parameter Extraction Technique Ieee Transactions On Electron Devices. 37: 908-919. DOI: 10.1109/16.52424  0.401
1990 Chen Y, Dahlberg ED, Shur M, Akinwande A. Effect of a magnetic field on the gate current in heterostructure field‐effect transistors Applied Physics Letters. 56: 2028-2030. DOI: 10.1063/1.103007  0.379
1989 Hack M, Shaw JG, Shur M. Development of Spice Models for Amorphous Silicon Thin-Film Transistors Mrs Proceedings. 149. DOI: 10.1557/Proc-149-233  0.328
1989 Ruden P, Shur M, Arch D, Daniels R, Grider D, Nohava T. Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors Ieee Transactions On Electron Devices. 36: 2371-2379. DOI: 10.1109/16.43656  0.399
1989 Ruden PP, Shur M, Akinwande AI, Jenkins P. Distributive Nature of Gate Current and Negative Transconductance in Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 36: 453-456. DOI: 10.1109/16.19951  0.383
1989 Shur M, Hack M, Shaw JG. A new analytic model for amorphous silicon thin-film transistors Journal of Applied Physics. 66: 3371-3380. DOI: 10.1063/1.344481  0.365
1989 Shur M, Hack M, Shaw JG, Martin RA. Capacitance-voltage characteristics of amorphous silicon thin-film transistors Journal of Applied Physics. 66: 3381-3385. DOI: 10.1063/1.344134  0.365
1989 Costa J, Peczalski A, Shur M. Monte Carlo studies of electronic transport in compensated InP Journal of Applied Physics. 66: 674-679. DOI: 10.1063/1.343536  0.374
1989 Grinberg AA, Shur M. A new analytical model for heterostructure field‐effect transistors Journal of Applied Physics. 65: 2116-2120. DOI: 10.1063/1.342859  0.387
1989 Hack M, Shur M, Tsai CC. Amorphous silicon photoconductive diode Applied Physics Letters. 54: 96-98. DOI: 10.1063/1.101200  0.333
1989 Hack M, Shaw JG, Shur M. Simulations and physics of amorphous silicon thin-film transistors Journal of Non-Crystalline Solids. 115: 150-155. DOI: 10.1016/0022-3093(89)90389-X  0.345
1988 Berroth M, Shur M, Haydl W. Experimental Studies of Hot Electron Effects in GaAs MESFETs The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1988.D-1-3  0.307
1988 Daniels RR, Ruden PP, Shur M, Grider D, Nohava TE, Arch DK. Quantum-Well p-Channel AlGaAs/InGaAs/GaAs Heterostructure Insulated-Gate Field-Effect Transistors with Very High Transconductance Ieee Electron Device Letters. 9: 355-357. DOI: 10.1109/55.742  0.397
1988 Xu J, Shur M. Temperature dependence of electron mobility and peak velocity in compensated GaAs Applied Physics Letters. 52: 922-923. DOI: 10.1063/1.99274  0.313
1988 Ruden PP, Han CJ, Shur M. Gate current of modulation-doped field-effect transistors Journal of Applied Physics. 64: 1541-1546. DOI: 10.1063/1.341830  0.418
1988 Xu J, Shur M. Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. 52, 922 (1988)] Applied Physics Letters. 53: 1219-1219. DOI: 10.1063/1.100422  0.315
1988 Sweeny M, Xu J, Shur M. Hole subbands in one-dimensional quantum well wires Superlattices and Microstructures. 4: 623-626. DOI: 10.1016/0749-6036(88)90249-2  0.321
1988 Xu J, Shur M. Double base hot electron transistor Superlattices and Microstructures. 4: 329-332. DOI: 10.1016/0749-6036(88)90177-2  0.338
1988 Xu J, Shur M. Double Ridley-Watkins-Hilsum-Gunn effect in compensated GaAs Solid-State Electronics. 31: 607-610. DOI: 10.1016/0038-1101(88)90352-8  0.351
1987 Hack M, Tuan H, Shaw J, Shur M, Yap P. Physics of Novel Amorphous Silicon High-Voltage Transistor Mrs Proceedings. 95. DOI: 10.1557/Proc-95-457  0.385
1987 Xu J, Shur M. Velocity-field dependence in GaAs Ieee Transactions On Electron Devices. 34: 1831-1832. DOI: 10.1109/T-Ed.1987.23158  0.306
1987 Xu J, Shur M, Hack M. Amplification of bipolar current flow by charge induced from an insulated gate electrode Journal of Applied Physics. 62: 1108-1111. DOI: 10.1063/1.339717  0.336
1987 Xu J, Shur M. Ballistic transport in hot‐electron transistors Journal of Applied Physics. 62: 3816-3820. DOI: 10.1063/1.339223  0.351
1987 Arch DK, Shur M, Abrokwah JK, Daniels RR. Superlattice conduction in superlattice modulation‐doped field‐effect transistors Journal of Applied Physics. 61: 1503-1509. DOI: 10.1063/1.338083  0.368
1987 Hack M, Shur M. Analysis of amorphous silicon thin-film transistors Journal of Non-Crystalline Solids. 1291-1294. DOI: 10.1016/0022-3093(87)90309-7  0.34
1987 Hack M, Street RA, Shur M. Capacitance studies of thermal equilibrium changes in n-type amorphous silicon Journal of Non-Crystalline Solids. 803-806. DOI: 10.1016/0022-3093(87)90192-X  0.343
1986 Hack M, Shur M, Czubatyj W. Double Injection Field Effect Transistor A New Type of Solid State Device Mrs Proceedings. 70. DOI: 10.1557/Proc-70-643  0.39
1986 Chen C, Shur M, Peczalski A. Trapping-enhanced temperature variation of the threshold voltage of GaAs MESFET's Ieee Transactions On Electron Devices. 33: 792-798. DOI: 10.1109/T-Ed.1986.22570  0.382
1986 Baek JH, Shur M, Daniels RR, Arch DK, Abrokwah JK, Tufte ON. New mechanism of gate current in heterostructure insulated gate field-effect transistors Ieee Electron Device Letters. 7: 519-521. DOI: 10.1109/Edl.1986.26458  0.401
1986 Hack M, Shur M. Limitations to the open circuit voltage of amorphous silicon solar cells Applied Physics Letters. 49: 1432-1434. DOI: 10.1063/1.97345  0.343
1986 Xu J, Bernhardt BA, Shur M, Chen C, Peczalski A. Electron mobility and velocity in compensated GaAs Applied Physics Letters. 49: 342-344. DOI: 10.1063/1.97162  0.343
1986 Hack M, Shur M, Czubatyj W. Double‐injection field‐effect transistor: A new type of solid‐state device Applied Physics Letters. 48: 1386-1388. DOI: 10.1063/1.96917  0.39
1986 Shur M, Hyun C, Hack M. New high field-effect mobility regimes of amorphous silicon alloy thin-film transistor operation Journal of Applied Physics. 59: 2488-2497. DOI: 10.1063/1.336994  0.341
1986 Shur M, Hack M. Determination of density of localized states in amorphous silicon alloys from the low field conductance of thinn‐i‐ndiodes Journal of Applied Physics. 59: 803-807. DOI: 10.1063/1.336601  0.331
1986 Hack M, Shur M. Implications of light‐induced defects on the performance of amorphous silicon alloyp‐i‐nsolar cells Journal of Applied Physics. 59: 2222-2228. DOI: 10.1063/1.336363  0.339
1985 Hack M, Shur M, Hyun C, Yaniv Z, Cannella V, Yang M. Experimental and Theoretical Analysis of the above Threshold Characteristics of Amorphous Silicon Alloy Field Effect Transistors Mrs Proceedings. 49. DOI: 10.1557/Proc-49-373  0.402
1985 Shur M. Spill‐over effects in planar doped barrier devices Applied Physics Letters. 47: 869-871. DOI: 10.1063/1.95959  0.356
1985 Hack M, Shur M. Analysis of light-induced degradation in amorphous silicon alloy p-i-n solar cells Journal of Applied Physics. 58: 1656-1661. DOI: 10.1063/1.336056  0.314
1985 Hack M, Shur M. Analysis of light-induced degradation in amorphous silicon alloy p-i-n solar cells Journal of Non-Crystalline Solids. 1481-1484. DOI: 10.1016/0022-3093(85)90934-2  0.309
1985 Shur M, Hyun C, Hack M, Yaniv Z, Yang M, Cannella V. Localized states distribution and the characteristics of amorphous silicon alloy field defect transistors Journal of Non-Crystalline Solids. 1401-1404. DOI: 10.1016/0022-3093(85)90917-2  0.355
1984 Shur M, Hack M, Hyun C. Characteristics of Amorphous Silicon Based Alloy Field Effect Transistors Mrs Proceedings. 33. DOI: 10.1557/Proc-33-307  0.364
1984 Shur M. Folded gate—A novel logic gate structure Ieee Electron Device Letters. 5: 454-455. DOI: 10.1109/Edl.1984.25985  0.368
1984 Shur M, Hack M. Physics of amorphous silicon based alloy field‐effect transistors Journal of Applied Physics. 55: 3831-3842. DOI: 10.1063/1.332893  0.375
1983 Lee K, Shur M, Drummond TJ, Morkoç H. Electron density of the two‐dimensional electron gas in modulation doped layers Journal of Applied Physics. 54: 2093-2096. DOI: 10.1063/1.332259  0.367
1983 Shur M, Hack M. A new analytical approach to amorphous silicon thin film transistors Journal of Non-Crystalline Solids. 1171-1174. DOI: 10.1016/0022-3093(83)90376-9  0.386
1983 Hack M, Shur M, Czubatyj W, Yang J, McGill J. Amorphous silicon based alloy solar cell modeling with new diffusion length interpretation Journal of Non-Crystalline Solids. 1115-1118. DOI: 10.1016/0022-3093(83)90362-9  0.382
1982 Drummond T, Morkoc H, Lee K, Shur M. Model for modulation doped field effect transistor Ieee Electron Device Letters. 3: 338-341. DOI: 10.1109/Edl.1982.25593  0.353
1976 Shur M. Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors Electronics Letters. 12: 615. DOI: 10.1049/El:19760470  0.34
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