Year |
Citation |
Score |
2020 |
Hossain E, Bhadra S, Jain H, Das S, Bhattacharya A, Ghosh S, Levine D. Recharging and rejuvenation of decontaminated N95 masks. Physics of Fluids (Woodbury, N.Y. : 1994). 32: 093304. PMID 32982134 DOI: 10.1063/5.0023940 |
0.753 |
|
2020 |
Shah AP, Rahman AA, Bhattacharya A. Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma Journal of Vacuum Science and Technology. 38: 13001. DOI: 10.1116/1.5123787 |
0.32 |
|
2020 |
Hossain E, Rahman AA, Shah AP, Chalke BA, Bhattacharya A. Large-area, thermally-sulfurized WS2 thin films: control of growth direction and use as a substrate for GaN epitaxy Semiconductor Science and Technology. 35: 35011. DOI: 10.1088/1361-6641/Ab6Bb3 |
0.784 |
|
2019 |
Maliakkal CB, Gokhale M, Parmar J, Bapat R, Chalke B, Ghosh S, Bhattacharya A. Growth, structural and optical characterization of wurtzite GaP nanowires. Nanotechnology. PMID 30802882 DOI: 10.1088/1361-6528/Ab0A46 |
0.802 |
|
2019 |
Hossain E, Kulkarni R, Mondal R, Guddolian S, Rahman AA, Thamizhavel A, Bhattacharya A. Optimization of Gas Ambient for High Quality β-Ga2O3 Single Crystals Grown by the Optical Floating Zone Technique Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0261907Jss |
0.766 |
|
2019 |
Rahman AA, Hossain E, Vaishnav H, Bhattacharya A, Sarma A. Laser induced structural phase transitions in Cu3SbS4 thin films Semiconductor Science and Technology. 34: 105026. DOI: 10.1088/1361-6641/Ab3Fdf |
0.761 |
|
2019 |
Hossain E, Rahman AA, Gokhale M, Kulkarni R, Mondal R, Thamizhavel A, Bhattacharya A. Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE Journal of Crystal Growth. 524: 125165. DOI: 10.1016/J.Jcrysgro.2019.125165 |
0.819 |
|
2018 |
Hossain E, Rahman AA, Bapat RD, Parmar JB, Shah AP, Arora A, Bratschitsch R, Bhattacharya A. Facile synthesis of WS nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties. Nanoscale. PMID 30155539 DOI: 10.1039/C8Nr03138J |
0.789 |
|
2018 |
Gupta VK, Ingale AA, Bhattacharya A, Gokhale M, Aggarwal R, Pal S. Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface. Nanotechnology. PMID 30052203 DOI: 10.1088/1361-6528/Aad672 |
0.391 |
|
2018 |
Mitra R, Jariwala B, Bhattacharya A, Das A. Probing in-plane anisotropy in few-layer ReSusing low frequency noise measurement. Nanotechnology. 29: 145706. PMID 29457965 DOI: 10.1088/1361-6528/Aaac03 |
0.324 |
|
2018 |
Parthiban P, Rahman AA, Bhattacharya A, Das D. Abrasive Free Chemical Mechanical Planarization of Semi-Polar (11–22) GaN: Effect on Structural and Surface Properties and Subsequent Homoepitaxial Growth Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0031804Jss |
0.33 |
|
2017 |
Arora A, Noky J, Drüppel M, Jariwala B, Deilmann T, Schneider R, Schmidt R, Del Pozo Zamudio O, Stiehm T, Bhattacharya A, Krüger P, Michaelis de Vasconcellos S, Rohlfing M, Bratschitsch R. Highly anisotropic in-plane excitons in atomically thin and bulk-like 1T(')-ReSe2. Nano Letters. PMID 28414459 DOI: 10.1021/Acs.Nanolett.7B00765 |
0.387 |
|
2017 |
Jariwala B, Thamizhavel A, Bhattacharya A. ReSe2: a reassessment of crystal structure and thermal analysis Journal of Physics D. 50: 44001. DOI: 10.1088/1361-6463/Aa5062 |
0.348 |
|
2016 |
Maliakkal CB, Hatui N, Bapat RD, Chalke BA, Rahman AA, Bhattacharya A. The Mechanism of Ni-Assisted GaN Nanowire Growth. Nano Letters. 16: 7632-7638. PMID 27960500 DOI: 10.1021/Acs.Nanolett.6B03604 |
0.795 |
|
2016 |
Arora Y, Shah AP, Battu S, Maliakkal CB, Haram S, Bhattacharya A, Khushalani D. Nanostructured MoS2/BiVO4 Composites for Energy Storage Applications. Scientific Reports. 6: 36294. PMID 27808122 DOI: 10.1038/Srep36294 |
0.775 |
|
2016 |
Gupta P, Rahman AA, Subramanian S, Gupta S, Thamizhavel A, Orlova T, Rouvimov S, Vishwanath S, Protasenko V, Laskar MR, Xing HG, Jena D, Bhattacharya A. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Scientific Reports. 6: 23708. PMID 27025461 DOI: 10.1038/Srep23708 |
0.82 |
|
2016 |
Jariwala B, Voiry D, Jindal A, Chalke BA, Bapat R, Thamizhavel A, Chhowalla M, Deshmukh M, Bhattacharya A. Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals Chemistry of Materials. 28: 3352-3359. DOI: 10.1021/Acs.Chemmater.6B00364 |
0.689 |
|
2016 |
Maliakkal CB, Rahman AA, Hatui N, Chalke BA, Bapat RD, Bhattacharya A. Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates Journal of Crystal Growth. 439: 47-53. DOI: 10.1016/J.Jcrysgro.2015.12.044 |
0.801 |
|
2016 |
Hatui N, Rahman AA, Maliakkal CB, Bhattacharya A. Direct MOVPE growth of semipolar (11 2¯ 2) AlxGa1-xN across the alloy composition range Journal of Crystal Growth. 437: 1-5. DOI: 10.1016/J.Jcrysgro.2015.12.009 |
0.811 |
|
2016 |
Jariwala B, Voiry D, Jindal A, Chalke BA, Bapat R, Thamizhavel A, Chhowalla M, Deshmukh M, Bhattacharya A. ChemInform Abstract: Synthesis and Characterization of ReS2and ReSe2Layered Chalcogenide Single Crystals. Cheminform. 47. DOI: 10.1002/CHIN.201631017 |
0.548 |
|
2015 |
Maliakkal CB, Mathew JP, Hatui N, Rahman AA, Deshmukh MM, Bhattacharya A. Fabrication and characterization of GaN nanowire doubly clamped resonators Journal of Applied Physics. 118. DOI: 10.1063/1.4930088 |
0.781 |
|
2015 |
Hatui N, Frentrup M, Rahman AA, Kadir A, Subramanian S, Kneissl M, Bhattacharya A. MOVPE growth of semipolar (112¯2) Al1-xInxN across the alloy composition range (0 ≤ x ≤ 0.55) Journal of Crystal Growth. 411: 106-109. DOI: 10.1016/J.Jcrysgro.2014.11.016 |
0.802 |
|
2014 |
Gupta P, Dongare PD, Grover S, Dubey S, Mamgain H, Bhattacharya A, Deshmukh MM. A facile process for soak-and-peel delamination of CVD graphene from substrates using water. Scientific Reports. 4: 3882. PMID 24457558 DOI: 10.1038/Srep03882 |
0.749 |
|
2014 |
Bhattacharya A. 2D Layered Materials: Novel Substrates for III-nitride Growth Photonics. DOI: 10.1364/Photonics.2014.M2B.3 |
0.406 |
|
2014 |
Saraswat G, Gupta P, Bhattacharya A, Raychaudhuri P. Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene Apl Materials. 2. DOI: 10.1063/1.4875356 |
0.667 |
|
2013 |
Shah AP, Laskar MR, Azizur Rahman A, Gokhale MR, Bhattacharya A. Inductively coupled plasma-reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4818871 |
0.75 |
|
2013 |
Turuvekere S, Karumuri N, Rahman AA, Bhattacharya A, Dasgupta A, Dasgupta N. Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and modeling Ieee Transactions On Electron Devices. 60: 3157-3165. DOI: 10.1109/Ted.2013.2272700 |
0.33 |
|
2013 |
Frentrup M, Hatui N, Wernicke T, Stellmach J, Bhattacharya A, Kneissl M. Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction Journal of Applied Physics. 114. DOI: 10.1063/1.4834521 |
0.729 |
|
2013 |
Gupta P, Rahman AA, Hatui N, Parmar JB, Chalke BA, Bapat RD, Purandare SC, Deshmukh MM, Bhattacharya A. Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers Applied Physics Letters. 103. DOI: 10.1063/1.4827539 |
0.812 |
|
2013 |
Arora A, Hatui N, Bhattacharya A, Ghosh S. Large exciton g-factors in anisotropically strained A-plane GaN film measured using magneto-optical Kerr effect spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4817399 |
0.713 |
|
2013 |
Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A. MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Journal of Crystal Growth. 372: 105-108. DOI: 10.1016/J.Jcrysgro.2013.03.020 |
0.811 |
|
2013 |
Sarau G, Lahiri B, Banzer P, Gupta P, Bhattacharya A, Vollmer F, Christiansen S. Split Ring Resonators: Enhanced Raman Scattering of Graphene using Arrays of Split Ring Resonators (Advanced Optical Materials 2/2013) Advanced Optical Materials. 1: 150-150. DOI: 10.1002/Adom.201370016 |
0.636 |
|
2013 |
Sarau G, Lahiri B, Banzer P, Gupta P, Bhattacharya A, Vollmer F, Christiansen S. Enhanced Raman Scattering of Graphene using Arrays of Split Ring Resonators Advanced Optical Materials. 1: 151-157. DOI: 10.1002/Adom.201200053 |
0.636 |
|
2012 |
Abhilash TS, Mathew JP, Sengupta S, Gokhale MR, Bhattacharya A, Deshmukh MM. Wide bandwidth nanowire electromechanics on insulating substrates at room temperature. Nano Letters. 12: 6432-5. PMID 23171031 DOI: 10.1021/Nl303804E |
0.649 |
|
2012 |
Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A. Optoelectronic devices based on III-N quantum wells grown on CVD graphene Photonics. 1-2. DOI: 10.1364/Photonics.2012.W3A.4 |
0.797 |
|
2012 |
De S, Layek A, Bhattacharya S, Kumar Das D, Kadir A, Bhattacharya A, Dhar S, Chowdhury A. Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4754079 |
0.705 |
|
2011 |
Laskar MR, Arora A, Shah AP, Rahman AA, Gokhale MR, Bhattacharya A. Polarization sensitive solar-blind detector based on a-plane AlGaN Ieee Photonic Society 24th Annual Meeting, Pho 2011. 37-38. DOI: 10.1109/Pho.2011.6110413 |
0.754 |
|
2011 |
Dhara S, Solanki HS, Pawan AR, Singh V, Sengupta S, Chalke BA, Dhar A, Gokhale M, Bhattacharya A, Deshmukh MM. Tunable thermal conductivity in defect engineered nanowires at low temperatures Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.121307 |
0.792 |
|
2011 |
De S, Kumar Das D, Layek A, Raja A, Kumar Singh M, Bhattacharya A, Dhar S, Chowdhury A. Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3671092 |
0.308 |
|
2011 |
Solanki HS, Sengupta S, Dubey S, Singh V, Dhara S, Kumar A, Bhattacharya A, Ramakrishnan S, Clerk AA, Deshmukh MM. High Q electromechanics with InAs nanowire quantum dots Applied Physics Letters. 99. DOI: 10.1063/1.3663631 |
0.785 |
|
2011 |
Dhara S, Sengupta S, Solanki HS, Maurya A, Pavan R. A, Gokhale MR, Bhattacharya A, Deshmukh MM. Facile fabrication of lateral nanowire wrap-gate devices with improved performance Applied Physics Letters. 99. DOI: 10.1063/1.3634010 |
0.781 |
|
2011 |
Laskar MR, Ganguli T, Rahman AA, Arora A, Hatui N, Gokhale MR, Ghosh S, Bhattacharya A. Anisotropic structural and optical properties of a -plane (11 2- 0) AlInN nearly-lattice-matched to GaN Applied Physics Letters. 98. DOI: 10.1063/1.3583457 |
0.811 |
|
2011 |
Laskar MR, Ganguli T, Rahman AA, Mukherjee A, Hatui N, Gokhale MR, Bhattacharya A. Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content Journal of Applied Physics. 109. DOI: 10.1063/1.3525602 |
0.788 |
|
2011 |
Laskar MR, Ganguli T, Hatui N, Rahman AA, Gokhale MR, Bhattacharya A. High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers Journal of Crystal Growth. 315: 208-210. DOI: 10.1016/J.Jcrysgro.2010.09.003 |
0.79 |
|
2011 |
Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A. Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Journal of Crystal Growth. 315: 233-237. DOI: 10.1016/J.Jcrysgro.2010.08.019 |
0.8 |
|
2011 |
De S, Layek A, Raja A, Kadir A, Gokhale MR, Bhattacharya A, Dhar S, Chowdhury A. Light-Emitting Diodes: Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes (Adv. Funct. Mater. 20/2011) Advanced Functional Materials. 21: 3827-3827. DOI: 10.1002/Adfm.201190086 |
0.673 |
|
2011 |
De S, Layek A, Raja A, Kadir A, Gokhale MR, Bhattacharya A, Dhar S, Chowdhury A. Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes Advanced Functional Materials. 21: 3828-3835. DOI: 10.1002/Adfm.201100894 |
0.711 |
|
2010 |
Prabhu SS, Deshpande A, Chaubal AU, Dhara S, Gokhale M, Bhattacharya A, Vengurlekar AS. Time-resolved THz-spectroscopy of InAs nano-wires Irmmw-Thz 2010 - 35th International Conference On Infrared, Millimeter, and Terahertz Waves, Conference Guide. DOI: 10.1109/ICIMW.2010.5613054 |
0.706 |
|
2010 |
Solanki HS, Sengupta S, Dhara S, Singh V, Patil S, Dhall R, Parpia J, Bhattacharya A, Deshmukh MM. Tuning mechanical modes and influence of charge screening in nanowire resonators Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115459 |
0.765 |
|
2010 |
Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A. Optimizationof a-plane (11̄2 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1̄1 02) sapphire Journal of Crystal Growth. 312: 2033-2037. DOI: 10.1016/J.Jcrysgro.2010.03.042 |
0.806 |
|
2010 |
Laskar MR, Ganguli T, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A. MOVPE growth and characterization of a-plane AIGaN over the entire composition range Physica Status Solidi - Rapid Research Letters. 4: 163-165. DOI: 10.1002/Pssr.201004091 |
0.801 |
|
2010 |
Kadir A, Ganguli T, Gokhale MR, Shah AP, Bhattacharya A. The role of InGaN interlayers on the microstructure of InN epilayers grown via metal organic vapour phase epitaxy Physica Status Solidi (a) Applications and Materials Science. 207: 1070-1073. DOI: 10.1002/Pssa.200983113 |
0.746 |
|
2009 |
Prabhu SS, Chaubal AU, Deshpande A, Dhara S, Gokhale M, Bhattacharya A, Vengurlekar AS. THz spectroscopy of InAs nanowires 34th International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz 2009. DOI: 10.1109/ICIMW.2009.5324622 |
0.701 |
|
2009 |
Dhara S, Solanki HS, Singh V, Narayanan A, Chaudhari P, Gokhale M, Bhattacharya A, Deshmukh MM. Magnetotransport properties of individual InAs nanowires Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.121311 |
0.774 |
|
2008 |
Bansal B, Kadir A, Bhattacharya A, Moshchalkov V. Photoluminescence from localized states in disordered indium nitride Applied Physics Letters. 93: 21113. DOI: 10.1063/1.2959185 |
0.679 |
|
2008 |
Kadir A, Mukhopadhyay S, Ganguli T, Galande C, Gokhale M, Arora B, Raychaudhuri P, Bhattacharya A. Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide Solid State Communications. 146: 361-364. DOI: 10.1016/J.Ssc.2008.04.002 |
0.695 |
|
2008 |
Kadir A, Gokhale MR, Bhattacharya A, Pretorius A, Rosenauer A. MOVPE growth and characterization of InN/GaN single and multi-quantum well structures Journal of Crystal Growth. 311: 95-98. DOI: 10.1016/J.Jcrysgro.2008.10.056 |
0.718 |
|
2008 |
Lobo N, Kadir A, Laskar MR, Shah AP, Gokhale MR, Rahman AA, Arora BM, Narasimhan KL, Bhattacharya A. Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy Journal of Crystal Growth. 310: 4747-4750. DOI: 10.1016/J.Jcrysgro.2008.08.022 |
0.777 |
|
2008 |
Ganguli T, Kadir A, Gokhale M, Kumar R, Shah AP, Arora BM, Bhattacharya A. Microstructure of InN epilayers deposited in a close-coupled showerhead reactor Journal of Crystal Growth. 310: 4942-4946. DOI: 10.1016/J.Jcrysgro.2008.08.007 |
0.719 |
|
2008 |
Mahmood ZH, Shah AP, Kadir A, Gokhale MR, Bhattacharya A, Arora BM. Charge deep level transient spectroscopy of electron traps in MOVPE grown n-GaN on sapphire Physica Status Solidi (B) Basic Research. 245: 2567-2571. DOI: 10.1002/Pssb.200844243 |
0.699 |
|
2007 |
Mahmood ZH, Shah AP, Kadir A, Gokhale MR, Ghosh S, Bhattacharya A, Arora BM. Determination of InN-GaN heterostructure band offsets from internal photoemission measurements Applied Physics Letters. 91. DOI: 10.1063/1.2794788 |
0.682 |
|
2007 |
Kadir A, Ganguli T, Kumar R, Gokhale MR, Shah AP, Ghosh S, Arora BM, Bhattacharya A. The role of hydrostatic stress in determining the bandgap of InN epilayers Applied Physics Letters. 91: 111913. DOI: 10.1063/1.2784199 |
0.703 |
|
2007 |
Bansal B, Gokhale MR, Bhattacharya A, Arora BM. InAs/InP quantum dots with bimodal size distribution : Two evolution pathways Journal of Applied Physics. 101: 94303. DOI: 10.1063/1.2710292 |
0.33 |
|
2007 |
Bansal B, Gokhale MR, Bhattacharya A, Arora BM. Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots Journal of Crystal Growth. 298: 586-590. DOI: 10.1016/J.Jcrysgro.2006.10.154 |
0.36 |
|
2007 |
Kadir A, Ganguli T, Gokhale MR, Shah AP, Chandvankar SS, Arora BM, Bhattacharya A. Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor Journal of Crystal Growth. 298: 403-408. DOI: 10.1016/J.Jcrysgro.2006.10.078 |
0.746 |
|
2007 |
Arora BM, Majumdar A, Shah AP, Gokhale MR, Ghosh S, Bhattacharya A, Sengupta D. Characteristics of high responsivity 8.5 μm InGaAs/InP QWIPs grown by metalorganic vapour phase epitaxy Infrared Physics and Technology. 50: 206-210. DOI: 10.1016/J.Infrared.2006.10.002 |
0.309 |
|
2006 |
Banerjee R, Bhattacharya A, Genc A, Arora BM. Structure of twins in GaAs nanowires grown by the vapour–liquid–solid process Philosophical Magazine Letters. 86: 807-816. DOI: 10.1080/09500830601055367 |
0.405 |
|
2006 |
Bansal B, Kadir A, Bhattacharya A, Arora BM, Bhat R. Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells Applied Physics Letters. 89: 32110. DOI: 10.1063/1.2227618 |
0.695 |
|
2006 |
Banerjee R, Bhattacharya A, Ratan R, Shah AP, Gokhale MR, Arora BM, Genc A, Kar S. Root-like structure at the nanowire/substrate interface in GaAs nanowires Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2159579 |
0.413 |
|
2005 |
Bansal B, Gokhale MR, Bhattacharya A, Arora BM. Growth kinetics effects on self-assembled InAs∕InP quantum dots Applied Physics Letters. 87: 203104. DOI: 10.1063/1.2128486 |
0.37 |
|
2005 |
Bhattacharya A, Nasarek M, Zeimer U, Klein A, Zorn M, Bugge F, Gramlich S, Weyers M. Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy Journal of Crystal Growth. 274: 331-338. DOI: 10.1016/J.Jcrysgro.2004.10.008 |
0.334 |
|
2004 |
Chandvankar SS, Shah AP, Bhattacharya A, Chandrasekaran KS, Arora BM. Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy Journal of Crystal Growth. 260: 348-359. DOI: 10.1016/J.Jcrysgro.2003.08.066 |
0.352 |
|
2003 |
Poser F, Bhattacharya A, Weeke S, Richter W. Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (100) substrates Journal of Crystal Growth. 248: 317-321. DOI: 10.1016/S0022-0248(02)01886-9 |
0.392 |
|
2003 |
Haberland K, Zorn M, Klein A, Bhattacharya A, Weyers M, Zettler J-, Richter W. In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy Journal of Crystal Growth. 248: 194-200. DOI: 10.1016/S0022-0248(02)01816-X |
0.348 |
|
2003 |
Ingale A, Datta S, Bhattacharya A, Ghokale MR, Arora BM. Raman and photoluminescence characterisation of InxGa1−xP self-assembled quantum dots on GaP(100) substrate Materials Science and Engineering: C. 23: 1115-1121. DOI: 10.1016/J.Msec.2003.09.079 |
0.394 |
|
2002 |
Datta S, Bhattacharya A, Gokhale MR, Pai SP, John J, Arora BM. Optimization of MOVPE-grown InxGa1-xP self-assembled quantum dots on GaP Journal of Crystal Growth. 241: 115-123. DOI: 10.1016/S0022-0248(02)01207-1 |
0.386 |
|
2002 |
Zorn M, Haberland K, Knigge A, Bhattacharya A, Weyers M, Zettler J-, Richter W. MOVPE process development for 650 nm VCSELS using optical in-situ techniques Journal of Crystal Growth. 235: 25-34. DOI: 10.1016/S0022-0248(01)01758-4 |
0.377 |
|
2000 |
Bhattacharya A, Zorn M, Oster A, Nasarek M, Wenzel H, Sebastian J, Weyers M, Tränkle G. Optimization of MOVPE growth for 650 nm-emitting VCSELs Journal of Crystal Growth. 221: 663-667. DOI: 10.1016/S0022-0248(00)00796-X |
0.349 |
|
2000 |
Venkataraghavan R, Gokhale MR, Shah AP, Bhattacharya A, Chandrasekaran KS, Arora BM. Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells Journal of Crystal Growth. 221: 535-539. DOI: 10.1016/S0022-0248(00)00765-X |
0.376 |
|
2000 |
Brunner F, Richter E, Bergunde T, Rechenberg I, Bhattacharya A, Maassdorf A, Tomm JW, Kurpas P, Achouche M, Würfl J, Weyers M. Effect of high-temperature annealing on GalnP/GaAs HBT structures grown by LP-MOVPE Journal of Electronic Materials. 29: 205-209. DOI: 10.1007/S11664-000-0143-Z |
0.382 |
|
2000 |
Haberland K, Bhattacharya A, Zorn M, Weyers M, Zettler JT, Richter W. MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy Journal of Electronic Materials. 29: 468-472. DOI: 10.1007/S11664-000-0102-8 |
0.332 |
|
1999 |
Zorn M, Kurpas P, Bhattacharya A, Weyers M, Zettler J-, Richter W. Correlation of Ingap(001) Surface Structure During Growth and Cupt B -Type Bulk Ordering Mrs Proceedings. 583: 217. DOI: 10.1557/Proc-583-217 |
0.325 |
|
1999 |
Knauer A, Erbert G, Wenzel H, Bhattacharya A, Bugge F, Maege J, Pittroff W, Sebastian J. 7 W CW power from tensile-strained GaAs/sub y/P/sub 1-y//AlGaAs (/spl lambda/=735 nm) QW diode lasers Electronics Letters. 35: 638-639. DOI: 10.1049/El:19990465 |
0.322 |
|
1998 |
Bhattacharya A, Botez D, Nabiev RF. Effect of element width on above-threshold behaviour of antiguided diode laser arrays Electronics Letters. 34: 84-85. DOI: 10.1049/El:19980083 |
0.523 |
|
1997 |
Botez D, Mawst L, Bhattacharya A, Lopez J, Li J, Kuech T, Iakovlev V, Suruceanu G, Caliman A, Syrbu A, Morris J. 6 W CW front-facet power from short-cavity (0.5 mm), 100 [micro sign]m stripe Al-free 0.98 [micro sign]m-emitting diode lasers Electronics Letters. 33: 2037. DOI: 10.1049/El:19971390 |
0.643 |
|
1997 |
Yang H, Mawst L, Nesnidal M, Lopez J, Bhattacharya A, Botez D. 10 W near-diffraction-limited peak pulsed power from Al-free, 0.98 [micro sign]m-emitting phase-locked antiguided arrays Electronics Letters. 33: 136. DOI: 10.1049/El:19970099 |
0.646 |
|
1997 |
Mawst L, Bhattacharya A, Nesnidal M, Lopez J, Botez D, Syrbu A, Yakovlev V, Suruceanu G, Mereutza A, Jansen M, Nabiev R. MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers Journal of Crystal Growth. 170: 383-389. DOI: 10.1016/S0022-0248(96)00513-1 |
0.651 |
|
1996 |
Nesnidal M, Mawst L, Bhattacharya A, Botez D, DiMarco L, Connolly J, Abeles J. Single-frequency, single-spatial-mode ROW-DFB diode laser arrays Ieee Photonics Technology Letters. 8: 182-184. DOI: 10.1109/68.484234 |
0.636 |
|
1996 |
Mawst LJ, Bhattacharya A, Lopez J, Botez D, Garbuzov DZ, DeMarco L, Nabiev RF, Jansen M, Fang F, Nabiev RF. Erratum: ‘‘8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers’’ [Appl. Phys. Lett. 69, 1532 (1996)] Applied Physics Letters. 69: 3437-3437. DOI: 10.1063/1.118163 |
0.613 |
|
1996 |
Mawst LJ, Bhattacharya A, Lopez J, Botez D, Garbuzov DZ, DeMarco L, Connolly JC, Jansen M, Fang F, Nabiev RF. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers Applied Physics Letters. 69: 1532-1534. DOI: 10.1063/1.117995 |
0.534 |
|
1996 |
Bhattacharya A, Mawst LJ, Nayak S, Li J, Kuech TF. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates Applied Physics Letters. 68: 2240-2242. DOI: 10.1063/1.115871 |
0.597 |
|
1996 |
Botez D, Mawst L, Bhattacharya A, Lopez J, Li J, Kuech T, Iakovlev V, Suruceanu G, Caliman A, Syrbu A. 66% CW wallplug efficiency from Al-free 0.98 [micro sign]m-emitting diode lasers Electronics Letters. 32: 2012. DOI: 10.1049/El:19961300 |
0.553 |
|
1996 |
Bhattacharya A, Mawst L, Nesnidal M, Lopez J, Botez D. 0.4 W CW diffraction limited beam Al free 0.98 [micro sign]m wavelength three core ARROW-type diode lasers Electronics Letters. 32: 657. DOI: 10.1049/El:19960456 |
0.639 |
|
1996 |
Syrbu A, Yakovlev V, Suruceanu G, Mereutza A, Mawst L, Bhattacharya A, Nesnidal M, Lopez J, Botez D. ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high CW power and ‘wallplug’ efficiency Electronics Letters. 32: 352. DOI: 10.1049/el:19960251 |
0.422 |
|
1995 |
Zmudzinski C, Botez D, Mawst LI, Bhattacharya A, Nesnidal M, Nabiev RF. Three-core ARROW-type diode laser: novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's Ieee Journal of Selected Topics in Quantum Electronics. 1: 129-137. DOI: 10.1109/2944.401190 |
0.571 |
|
1995 |
Mawst LJ, Bhattacharya A, Nesnidal M, Lopez J, Botez D, Morris JA, Zory P. High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation Applied Physics Letters. 67: 2901-2903. DOI: 10.1063/1.114836 |
0.785 |
|
1995 |
Mawst L, Bhattacharya A, Nesnidal M, Lopez J, Botez D, Morris J, Zory P. High CW output power and ‘wallplug’ efficiency Al-free InGaAs/InGaAsP/InGaP double quantum well diode lasers Electronics Letters. 31: 1153. DOI: 10.1049/El:19950812 |
0.773 |
|
1993 |
Anitha VP, Bhattacharya A, Patil NG, Major S. Study of sputtered molybdenum nitride as a diffusion barrier Thin Solid Films. 236: 306-310. DOI: 10.1016/0040-6090(93)90687-K |
0.334 |
|
Show low-probability matches. |