Year |
Citation |
Score |
2014 |
Reine M, Pinkie B, Schuster J, Bellotti E. New model for the ideal nBn infrared detector Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2054525 |
0.384 |
|
2013 |
Reine M, Pinkie B, Schuster J, Bellotti E. Numerical simulation of InAs nBn infrared detectors with N-Type barrier layers Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016150 |
0.386 |
|
2013 |
Reine M, Schuster J, Pinkie B, Bellotti E. Numerical simulation and analytical modeling of inas nBn infrared detectors with p-type barriers Journal of Electronic Materials. 42: 3015-3033. DOI: 10.1007/S11664-013-2685-X |
0.351 |
|
2012 |
Schuster J, Pinkie B, Reine M, Bellotti E. Numerical simulation of InAs/AlAsSb nBn detector arrays Proceedings of Spie. 8353: 835330. DOI: 10.1117/12.919401 |
0.355 |
|
2012 |
Schuster J, Keasler CA, Reine M, Bellotti E. Numerical Simulation of InAs nBn Back-Illuminated Detectors Journal of Electronic Materials. 41: 2981-2991. DOI: 10.1007/S11664-012-2168-5 |
0.355 |
|
2010 |
Smith FTJ, Lamarre P, Marciniec J, Tobin S, Parodos T, LoVecchio P, Wong K, Reine MB, Bellotti E, LeVan P, Hahn A, Bliss D. HgCdTe LWIR p-on-n photodiodes formed by arsenic diffusion from the vapor phase Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.861079 |
0.387 |
|
2009 |
Reine MB. History of HgCdTe infrared detectors at BAE Systems Proceedings of Spie. 7298. DOI: 10.1117/12.817850 |
0.372 |
|
2009 |
Lamarre P, Fulk C, D'Orsogna D, Bellotti E, Smith F, Lovecchio P, Reine MB, Parodos T, Marciniec J, Tobin SP, Markunas J. Characterization of dislocations in HgCdTe heteroepitaxial layers using a new substrate removal technique Journal of Electronic Materials. 38: 1746-1754. DOI: 10.1007/S11664-009-0771-X |
0.329 |
|
2008 |
Reine MB, Marciniec JW, Wong KK, Parodos T, Mullarkey JD, Lamarre PA, Tobin SP, Minich RW, Gustavsen KA, Compton M, Williams GM. Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes Journal of Electronic Materials. 37: 1376-1386. DOI: 10.1007/S11664-008-0420-9 |
0.405 |
|
2007 |
Parodos T, Fitzgerald EA, Caster A, Tobin S, Marciniec J, Welsch J, Hairston A, Lamarre P, Riendeau J, Woodward B, Hu S, Reine M, Lovecchio P. Effect of dislocations on VLWIR HgCdTe photodiodes Journal of Electronic Materials. 36: 1068-1076. DOI: 10.1007/S11664-007-0173-X |
0.399 |
|
2007 |
Reine MB, Marciniec JW, Wong KK, Parodos T, Mullarkey JD, Lamarre PA, Tobin SP, Gustavsen KA, Williams GM. HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays Journal of Electronic Materials. 36: 1059-1067. DOI: 10.1007/S11664-007-0172-Y |
0.404 |
|
2006 |
Hairston A, Tobin SP, Hutchins M, Marciniec J, Mullarkey J, Norton P, Gurnee M, Reine MB. SWIR HgCdTe 256×256 focal plane array technology at BAE systems Proceedings of Spie - the International Society For Optical Engineering. 6295. DOI: 10.1117/12.693201 |
0.395 |
|
2006 |
Reine MB, Marciniec JW, Wong KK, Parodos T, Mullarkey JD, Lamarre PA, Tobin SP, Gustavsen KA, Williams GM. HgCdTe MWIR back-illuminated electron-inldated avalanche photodiode arrays Proceedings of Spie - the International Society For Optical Engineering. 6294. DOI: 10.1117/12.692872 |
0.408 |
|
2002 |
Guo S, Pophristic M, Ferguson I, Peres B, Lamarre P, Tobin S, Wong K, Reine M, Sood A. Growth of high Al concentration AlGaN for solar blind photodetector applications Materials Research Society Symposium - Proceedings. 693: 665-670. DOI: 10.1557/Proc-693-I11.18.1 |
0.399 |
|
2001 |
Lamarre P, Hairston A, Tobin SP, Wong KK, Sood AK, Reine MB, Pophristic M, Birkham R, Ferguson IT, Singh R, Eddy CR, Chowdhury U, Wong MM, Dupuis RD, Kozodoy P, et al. AlGaN UV focal plane arrays Physica Status Solidi (a). 188: 289-292. DOI: 10.1002/1521-396X(200111)188:1<289::Aid-Pssa289>3.0.Co;2-U |
0.385 |
|
2000 |
Lamarre P, Hairston A, Tobin S, Wong KK, Taylor MF, Sood AK, Reine MB, Schurman MJ, Ferguson IT, Singh R, Eddy CR. AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G10.9 |
0.448 |
|
1999 |
Mitra P, Case FC, Reine MB, Parodos T, Tobin SP, Norton PW. MOVPE growth of HgCdTe for high performance 3-5mm photodiodes operating at 100-180K Journal of Electronic Materials. 28: 589-595. DOI: 10.1007/S11664-999-0040-Z |
0.455 |
|
1998 |
Reine MB, Hairston AW, O'Dette P, Tobin SP, Smith FTJ, Musicant BL, Mitra P, Case FC. Simultaneous MW/LW dual-band MOVPE HgCdTe 64x64 FPAs Proceedings of Spie. 3379: 200-212. DOI: 10.1117/12.317588 |
0.376 |
|
1998 |
Mitra P, Case FC, Reine MB. Progress in MOVPE of HgCdTe for advanced infrared detectors Journal of Electronic Materials. 27: 510-520. DOI: 10.1007/S11664-998-0007-5 |
0.415 |
|
1997 |
Mitra P, Case FC, Reine MB, Starr R, Weiler MH. Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes Journal of Crystal Growth. 170: 542-548. DOI: 10.1016/S0022-0248(96)00651-3 |
0.399 |
|
1997 |
Mitra P, Barnes SL, Case FC, Reine MB, O'Dette P, Starr R, Hairston A, Kuhler K, Weiler MH, Musicant BL. MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays Journal of Electronic Materials. 26: 482-487. DOI: 10.1007/S11664-997-0181-X |
0.441 |
|
1996 |
Mitra P, Tyan YL, Case FC, Starr R, Reine MB. Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe and in situ growth of high performance long wavelength infrared photodiodes Journal of Electronic Materials. 25: 1328-1335. DOI: 10.1007/Bf02655028 |
0.425 |
|
1995 |
Reine MB, Norton PW, Starr R, Weiler MH, Kestigian M, Musicant BL, Mitra P, Schimert T, Case FC, Bhat IB, Ehsani H, Rao V. Independently accessed back-to-back HgCdTe photodiodes: a new dual-band infrared detector Journal of Electronic Materials. 24: 669-679. DOI: 10.1007/Bf02657977 |
0.431 |
|
1995 |
Mitra P, Schimert TR, Case FC, Starr R, Weiler MH, Kestigian M, Reine MB. Metalorganic chemical vapor deposition of HgCdTe for photodiode applications Journal of Electronic Materials. 24: 661-668. DOI: 10.1007/Bf02657976 |
0.448 |
|
1995 |
Rao V, Ehsani H, Bhat IB, Kestigian M, Starr R, Weiler MH, Reine MB. Metalorganic vapor phase epitaxy in-situ growth of p-on-n and n-on-p Hg1-xCdxTe junction photodiodes using tertiarybutylarsine as the acceptor source Journal of Electronic Materials. 24: 437-443. DOI: 10.1007/Bf02657945 |
0.411 |
|
1995 |
Mitra P, Schimert TR, Case FC, Barnes SL, Reine MB, Starr R, Weiler MH, Kestigian M. Metalorganic chemical vapor deposition of HgCdTe p/n junctions using arsenic and iodine doping Journal of Electronic Materials. 24: 1077-1085. DOI: 10.1007/Bf02653056 |
0.447 |
|
1994 |
Krueger EE, Pultz GN, Maschhoff KR, Tobin SP, Norton PW, Rutter JH, Reine MB. Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm Mrs Proceedings. 299. DOI: 10.1557/Proc-299-85 |
0.429 |
|
1991 |
Pultz GN, Norton PW, Krueger EE, Reine MB. Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11-18 μm applications Journal of Vacuum Science & Technology B. 9: 1724-1730. DOI: 10.1116/1.585406 |
0.396 |
|
1990 |
Krueger EE, Pultz GN, Norton PW, Mroczkowski JA, Weiler MH, Reine MB. Two-Layer LPE Hgcdte P-on-n 8-18μm Photodiodes Mrs Proceedings. 216. DOI: 10.1557/Proc-216-93 |
0.407 |
|
1980 |
Tobin SP, Briggs RJ, Marciniec JW, Zimmermann PH, Sood AK, Reine MB. WP-B6 dark-current mechanisms in long-wavelength n + -on-p Hg 0.8 Cd 0.2 Te photodiodes over the 200-10-K temperature range Ieee Transactions On Electron Devices. 27: 2202-2202. DOI: 10.1109/T-Ed.1980.20248 |
0.326 |
|
1968 |
Weiler MH, Reine M, Lax B. Theory of Multiphoton Magnetoabsorption in Semiconductors Physical Review. 171: 949-958. DOI: 10.1103/Physrev.171.949 |
0.435 |
|
1967 |
Reine M, Vrehen QHF, Lax B. Photon-Assisted Magnetotunneling in Germanium in Parallel and Crossed Electric and Magnetic Fields Physical Review. 163: 726-733. DOI: 10.1103/Physrev.163.726 |
0.45 |
|
1966 |
Button KJ, Lax B, Weiler MH, Reine M. Multiphoton magneto-optical resonance in PbTe and InSb Physical Review Letters. 17: 1005-1007. DOI: 10.1103/Physrevlett.17.1005 |
0.464 |
|
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