☰

George T Wang - Publications

Affiliations: 
Stanford University, Palo Alto, CA 
Tree Info Similar researchers PubMed Report error

58 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Raffaelle PR, Wang GT, Shestopalov AA. Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using -Halogen-succinimides. Acs Applied Materials & Interfaces. 15: 55139-55149. PMID 37965814 DOI: 10.1021/acsami.3c13269  0.366
2022 Parke T, Silva-Quinones D, Wang GT, Teplyakov AV. The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. PMID 36516050 DOI: 10.1002/cphc.202200724  0.664
2021 Turner EM, Campbell Q, Pizarro J, Yang H, Sapkota KR, Lu P, Baczewski AD, Wang GT, Jones KS. Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires. Nano Letters. PMID 34582219 DOI: 10.1021/acs.nanolett.1c01670  0.312
2021 Frederick E, Dwyer K, Wang GT, Misra S, Butera RE. The stability of Cl-, Br-, and I-passivated Si(100)-(2×1) in ambient environments for atomically-precise pattern preservation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 34348242 DOI: 10.1088/1361-648X/ac1aa4  0.363
2021 Silva-Quinones D, Butera RE, Wang GT, Teplyakov AV. Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100). Langmuir : the Acs Journal of Surfaces and Colloids. PMID 34062064 DOI: 10.1021/acs.langmuir.1c00763  0.643
2020 Silva-Quinones D, He C, Butera RE, Wang GT, Teplyakov AV. Reaction of BCl with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry. Applied Surface Science. 533. PMID 33100450 DOI: 10.1016/J.Apsusc.2020.146907  0.716
2020 Silva-Quinones D, He C, Dwyer KJ, Butera RE, Wang GT, Teplyakov AV. Reaction of Hydrazine with Solution- and Vacuum-Prepared Selectively Terminated Si(100) Surfaces: Pathways to the Formation of Direct Si-N Bonds. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 33086003 DOI: 10.1021/acs.langmuir.0c02088  0.693
2019 Sapkota KR, Lu P, Medlin DL, Wang GT. High temperature synthesis and characterization of ultrathin tellurium nanostructures Apl Materials. 7: 81103. DOI: 10.1063/1.5109899  0.325
2018 Golam Sarwar ATM, Leung B, Wang GT, Myers RC. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays Crystal Growth & Design. 18: 1191-1197. DOI: 10.1021/Acs.Cgd.7B01725  0.34
2017 Li C, Wright JB, Liu S, Lu P, Figiel JJ, Leung B, Chow WW, Brener I, Koleske DD, Luk TS, Feezell DF, Brueck SR, Wang GT. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers. Nano Letters. PMID 28118019 DOI: 10.1021/Acs.Nanolett.6B04483  0.339
2016 Wang GT. III-Nitride nanowire lasers: fabrication and control of optical properties(Conference Presentation) Proceedings of Spie. 9924: 992402. DOI: 10.1117/12.2239450  0.325
2016 Boubanga-Tombet S, Wright JB, Lu P, Williams MRC, Li C, Wang GT, Prasankumar RP. Ultrafast Carrier Capture and Auger Recombination in Single GaN/InGaN Multiple Quantum Well Nanowires Acs Photonics. 3: 2237-2242. DOI: 10.1021/Acsphotonics.6B00622  0.324
2015 Song E, Li Q, Swartzentruber B, Pan W, Wang GT, Martinez JA. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires. Nanotechnology. 27: 015204. PMID 26606258 DOI: 10.1088/0957-4484/27/1/015204  0.35
2015 Léonard F, Song E, Li Q, Swartzentruber B, Martinez JA, Wang GT. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires. Nano Letters. PMID 26529491 DOI: 10.1021/Acs.Nanolett.5B03572  0.338
2015 Liu S, Li C, Figiel JJ, Brueck SR, Brener I, Wang GT. Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure. Nanoscale. 7: 9581-8. PMID 25952721 DOI: 10.1039/C5Nr01855B  0.302
2015 Lin Y, Leung B, Li Q, Figiel JJ, Wang GT. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy Journal of Crystal Growth. 427: 67-71. DOI: 10.1016/J.Jcrysgro.2015.07.006  0.318
2014 Xu H, Hurtado A, Wright JB, Li C, Liu S, Figiel JJ, Luk TS, Brueck SR, Brener I, Balakrishnan G, Li Q, Wang GT. Polarization control in GaN nanowire lasers. Optics Express. 22: 19198-203. PMID 25321005 DOI: 10.1364/Oe.22.019198  0.301
2014 Pan W, Dimakis E, Wang GT, Moustakas TD, Tsui DC. Two-dimensional electron gas in monolayer InN quantum wells Applied Physics Letters. 105. DOI: 10.1063/1.4902916  0.316
2014 Wang GT, Li Q, Wierer JJ, Koleske DD, Figiel JJ. Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs Physica Status Solidi (a) Applications and Materials Science. 211: 748-751. DOI: 10.1002/Pssa.201300491  0.31
2013 Howell SL, Padalkar S, Yoon K, Li Q, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy. Nano Letters. 13: 5123-8. PMID 24099617 DOI: 10.1021/Nl402331U  0.301
2013 Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array. Nano Letters. 13: 4317-25. PMID 23919559 DOI: 10.1021/Nl4021045  0.328
2013 Zhang S, Li Y, Fathololoumi S, Nguyen HPT, Wang Q, Mi Z, Li Q, Wang GT. On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping Aip Advances. 3: 082103. DOI: 10.1063/1.4817834  0.364
2012 Zhao S, Fathololoumi S, Bevan KH, Liu DP, Kibria MG, Li Q, Wang GT, Guo H, Mi Z. Tuning the surface charge properties of epitaxial InN nanowires Nano Letters. 12: 2877-2882. PMID 22545811 DOI: 10.1021/Nl300476D  0.475
2012 Riley JR, Bernal RA, Li Q, Espinosa HD, Wang GT, Lauhon LJ. Atom probe tomography of a-axis GaN nanowires: analysis of nonstoichiometric evaporation behavior. Acs Nano. 6: 3898-906. PMID 22515737 DOI: 10.1021/Nn2050517  0.32
2012 Wang GT, Li Q, Wierer J, Figiel J, Wright JB, Luk TS, Brener I. Top-down fabrication of GaN-based nanorod LEDs and lasers Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.909377  0.327
2012 Zhao S, Mi Z, Kibria MG, Li Q, Wang GT. Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires Physical Review B. 85. DOI: 10.1103/Physrevb.85.245313  0.469
2012 Kar A, Li Q, Upadhya PC, Seo MA, Wright J, Luk TS, Wang GT, Prasankumar RP. The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires Applied Physics Letters. 101: 143104. DOI: 10.1063/1.4756915  0.354
2012 Li Q, Figiel JJ, Wang GT, Xu H, Balakrishnan G. GaN epitaxy on Cu(110) by metal organic chemical vapor deposition Applied Physics Letters. 100: 192110. DOI: 10.1063/1.4714738  0.3
2011 Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. Optics Express. 19: 25528-34. PMID 22273946 DOI: 10.1364/Oe.19.025528  0.364
2011 Subramania G, Li Q, Lee YJ, Figiel JJ, Wang GT, Fischer AJ. Gallium nitride based logpile photonic crystals. Nano Letters. 11: 4591-6. PMID 21970551 DOI: 10.1021/Nl201867V  0.301
2011 Huang JY, Zheng H, Mao SX, Li Q, Wang GT. In situ nanomechanics of GaN nanowires. Nano Letters. 11: 1618-22. PMID 21417390 DOI: 10.1021/Nl200002X  0.337
2011 Wang GT, Li Q, Huang J, Talin AA, Armstrong A, Upadhya PC, Prasankumar RP. III-nitride nanowires: novel materials for solid-state lighting Proceedings of Spie. 7954. DOI: 10.1117/12.872776  0.323
2011 Baird L, Ong CP, Cole RA, Haegel NM, Talin AA, Li Q, Wang GT. Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires Applied Physics Letters. 98. DOI: 10.1063/1.3573832  0.301
2010 Li Q, Wang GT. Spatial distribution of defect luminescence in GaN nanowires. Nano Letters. 10: 1554-8. PMID 20392110 DOI: 10.1021/Nl903517T  0.43
2010 Wang GT, Li Q, Huang J, Talin AA, Lin Y, Arslan I, Armstrong A, Upadhya PC, Prasankumar RP. III-nitride nanowires: growth, properties, and applications Proceedings of Spie. 7768. DOI: 10.1117/12.859404  0.313
2010 Upadhya PC, Li Q, Wang GT, Fischer AJ, Taylor AJ, Prasankumar RP. The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024017  0.338
2010 Armstrong A, Li Q, Lin Y, Talin AA, Wang GT. GaN nanowire surface state observed using deep level optical spectroscopy Applied Physics Letters. 96: 163106. DOI: 10.1063/1.3404182  0.425
2009 Prasankumar RP, Upadhya PC, Li Q, Smith N, Choi SG, Azad AK, Talbayev D, Wang GT, Fischer AJ, Hollingsworth J, Trugman SA, Picraux ST, Taylor AJ. Ultrafast carrier dynamics in semiconductor nanowires Proceedings of Spie - the International Society For Optical Engineering. 7406. DOI: 10.1117/12.828022  0.313
2009 Armstrong A, Li Q, Bogart KHA, Lin Y, Wang GT, Talin AA. Deep level optical spectroscopy of GaN nanorods Journal of Applied Physics. 106: 53712. DOI: 10.1063/1.3211317  0.316
2009 Li Q, Figiel JJ, Wang GT. Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres Applied Physics Letters. 94: 231105. DOI: 10.1063/1.3152012  0.329
2009 Lin Y, Li Q, Armstrong A, Wang GT. In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten/gallium nanoprobes Solid State Communications. 149: 1608-1610. DOI: 10.1016/J.Ssc.2009.06.035  0.334
2009 Armstrong A, Wang GT, Talin AA. Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires Journal of Electronic Materials. 38: 484-489. DOI: 10.1007/S11664-008-0569-2  0.39
2008 Talin AA, Wang GT, Lai E, Anderson RJ. Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires Applied Physics Letters. 92: 93105. DOI: 10.1063/1.2889941  0.314
2008 Arslan I, Talin AA, Wang GT. Three-dimensional visualization of surface defects in core-shell nanowires Journal of Physical Chemistry C. 112: 11093-11097. DOI: 10.1021/Jp804194S  0.379
2008 Li Q, Creighton JR, Wang GT. The role of collisions in the aligned growth of vertical nanowires Journal of Crystal Growth. 310: 3706-3709. DOI: 10.1016/J.Jcrysgro.2008.05.026  0.309
2007 Creighton JR, Wang GT, Coltrin ME. Fundamental chemistry and modeling of group-III nitride MOVPE Journal of Crystal Growth. 298: 2-7. DOI: 10.1016/J.Jcrysgro.2006.10.060  0.35
2006 Wang GT, Talin AA, Werder DJ, Creighton JR, Lai E, Anderson RJ, Arslan I. Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition Nanotechnology. 17: 5773-5780. DOI: 10.1088/0957-4484/17/23/011  0.35
2005 Creighton JR, Wang GT. Kinetics of metal organic-ammonia adduct decomposition: implications for group-III nitride MOCVD. The Journal of Physical Chemistry. A. 109: 10554-62. PMID 16834311 DOI: 10.1021/Jp054380S  0.313
2004 Wang GT, Creighton JR. Complex Formation between Magnesocene (MgCp2) and NH3: Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect Journal of Physical Chemistry A. 108: 4873-4877. DOI: 10.1021/Jp036494E  0.365
2003 Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996. DOI: 10.1021/Jp026864J  0.779
2002 Wang GT, Mui C, Musgrave CB, Bent SF. Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1. Journal of the American Chemical Society. 124: 8990-9004. PMID 12137555 DOI: 10.1021/Ja026330W  0.8
2002 Mui C, Han JH, Wang GT, Musgrave CB, Bent SF. Proton transfer reactions on semiconductor surfaces. Journal of the American Chemical Society. 124: 4027-38. PMID 11942841 DOI: 10.1021/Ja0171512  0.795
2001 Mui C, Wang GT, Bent SF, Musgrave CB. Reactions of methylamines at the Si(100)-2×1 surface Journal of Chemical Physics. 114: 10170-10180. DOI: 10.1063/1.1370056  0.808
2001 Wang GT, Mui C, Musgrave CB, Bent SF. Example of a thermodynamically controlled reaction on a semiconductor surface: Acetone on Ge(100)-2 × 1 Journal of Physical Chemistry B. 105: 12559-12565. DOI: 10.1021/Jp013058O  0.806
2001 Wang GT, Mui C, Musgrave CB, Bent SF. Effect of a methyl-protecting group on the adsorption of pyrrolidine on Si(100)-2 × Journal of Physical Chemistry B. 105: 3295-3299. DOI: 10.1021/Jp004298R  0.789
2001 Russell JN, Butler JE, Wang GT, Bent SF, Hovis JS, Hamers RJ, D'Evelyn MP. π bond versus radical character of the diamond (1 0 0)-2 × 1 surface Materials Chemistry and Physics. 72: 147-151. DOI: 10.1016/S0254-0584(01)00425-4  0.609
1999 Lal P, Teplyakov AV, Noah Y, Kong MJ, Wang GT, Bent SF. Adsorption of ethylene on the Ge(100)-2×1 surface: Coverage and time-dependent behavior Journal of Chemical Physics. 110: 10545-10553. DOI: 10.1063/1.478986  0.727
1999 Wang GT, Mui C, Musgrave CB, Bent SF. Cycloaddition of Cyclopentadiene and Dicyclopentadiene on Si(100)-2x1: Comparison of Monomer and Dimer Adsorption Journal of Physical Chemistry B. 103: 6803-6808. DOI: 10.1021/Jp991528X  0.8
Show low-probability matches.