Year |
Citation |
Score |
2017 |
Gupta I, Serb A, Berdan R, Khiat A, Prodromakis T. Volatility Characterization for RRAM Devices Ieee Electron Device Letters. 38: 28-31. DOI: 10.1109/Led.2016.2631631 |
0.784 |
|
2016 |
Serb A, Bill J, Khiat A, Berdan R, Legenstein R, Prodromakis T. Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses. Nature Communications. 7: 12611. PMID 27681181 DOI: 10.1038/Ncomms12611 |
0.681 |
|
2016 |
Berdan R, Vasilaki E, Khiat A, Indiveri G, Serb A, Prodromakis T. Emulating short-term synaptic dynamics with memristive devices. Scientific Reports. 6: 18639. PMID 26725838 DOI: 10.1038/Srep18639 |
0.717 |
|
2016 |
Xing J, Serb A, Khiat A, Berdan R, Xu H, Prodromakis T. An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution Ieee Transactions On Circuits and Systems I: Regular Papers. 63: 818-826. DOI: 10.1109/Tcsi.2016.2538039 |
0.755 |
|
2015 |
Berdan R, Serb A, Khiat A, Regoutz A, Papavassiliou C, Prodromakis T. A $\mu $ -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays Ieee Transactions On Electron Devices. 62: 2190-2196. DOI: 10.1109/Ted.2015.2433676 |
0.708 |
|
2015 |
Gupta I, Serb A, Berdan R, Khiat A, Regoutz A, Prodromakis T. A Cell Classifier for RRAM Process Development Ieee Transactions On Circuits and Systems Ii: Express Briefs. 62: 676-680. DOI: 10.1109/Tcsii.2015.2415276 |
0.792 |
|
2014 |
Berdan R, Lim C, Khiat A, Papavassiliou C, Prodromakis T. A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM Ieee Electron Device Letters. 35: 135-137. DOI: 10.1109/Led.2013.2291158 |
0.717 |
|
2014 |
Serb A, Berdan R, Khiat A, Li SLW, Vasilaki E, Papavassiliou C, Prodromakis T. Memristors as synapse emulators in the context of event-based computation Proceedings - Ieee International Symposium On Circuits and Systems. 2085-2088. DOI: 10.1109/ISCAS.2014.6865577 |
0.638 |
|
2014 |
Salaoru I, Khiat A, Li Q, Berdan R, Papavassiliou C, Prodromakis T. Origin of the OFF state variability in ReRAM cells Journal of Physics D. 47: 145102. DOI: 10.1088/0022-3727/47/14/145102 |
0.713 |
|
2013 |
Berdan R, Prodromakis T, Khiat A, Salaoru I, Toumazou C, Perez-Diaz F, Vasilaki E. Temporal processing with volatile memristors Proceedings - Ieee International Symposium On Circuits and Systems. 425-428. DOI: 10.1109/ISCAS.2013.6571871 |
0.625 |
|
2013 |
Salaoru I, Khiat A, Li Q, Berdan R, Prodromakis T. Pulse-induced resistive and capacitive switching in TiO2 thin film devices Applied Physics Letters. 103: 233513. DOI: 10.1063/1.4840316 |
0.775 |
|
2012 |
Berdan R, Prodromakis T, Salaoru I, Khiat A, Toumazou C. Memristive devices as parameter setting elements in programmable gain amplifiers Applied Physics Letters. 101: 243502. DOI: 10.1063/1.4770315 |
0.764 |
|
2012 |
Berdan R, Prodromakis T, Toumazou C. High precision analogue memristor state tuning Electronics Letters. 48: 1105-1107. DOI: 10.1049/El.2012.2295 |
0.765 |
|
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