| Year |
Citation |
Score |
| 2019 |
Cheong HM, Burnett JH, Paul W, Hopkins PF, Gossard AC. Hydrostatic-pressure dependence of band offsets in GaAs/AlxGa1-xAs heterostructures. Physical Review. B, Condensed Matter. 49: 10444-10449. PMID 10009868 DOI: 10.1103/Physrevb.49.10444 |
0.339 |
|
| 2019 |
Cheong HM, Burnett JH, Paul W, Hopkins PF, Campman K, Gossard AC. Hydrostatic-pressure coefficient of the direct band-gap energy of AlxGa1-xAs for x=0-0.35. Physical Review. B, Condensed Matter. 53: 10916-10920. PMID 9982663 DOI: 10.1103/Physrevb.53.10916 |
0.351 |
|
| 2019 |
Cheong HM, Wickboldt P, Pang D, Chen JH, Paul W. Effects of hydrostatic pressure on the photoluminescence of porous silicon. Physical Review. B, Condensed Matter. 52: 11577-11579. PMID 9980273 DOI: 10.1103/Physrevb.52.R11577 |
0.351 |
|
| 2019 |
Mackenzie KD, Burnett JH, Eggert JR, Li YM, Paul W. Comparison of the structural, electrical, and optical properties of amorphous silicon-germanium alloys produced from hydrides and fluorides. Physical Review. B, Condensed Matter. 38: 6120-6136. PMID 9947071 DOI: 10.1103/Physrevb.38.6120 |
0.394 |
|
| 2008 |
Paul W, Burnett JH, Cheong HM. Role of high pressures in semiconductor research High‐Pressure Science and Technology. 309: 545-548. DOI: 10.1063/1.46094 |
0.406 |
|
| 2004 |
Paul W. Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research Physica Status Solidi B-Basic Solid State Physics. 241: 3095-3098. DOI: 10.1002/Pssb.200405201 |
0.332 |
|
| 1998 |
Chen C, Lubianiker Y, Cohen JD, Yang JC, Guha S, Wickboldt P, Paul W. The Electronic Structure, Metastability and Transport Properties of Optimized Amorphous Silicon-Germanium Alloys Mrs Proceedings. 507. DOI: 10.1557/Proc-507-769 |
0.323 |
|
| 1998 |
Marques FC, Wickboldt P, Pang D, Chen JH, Paul W. Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge Journal of Applied Physics. 84: 3118-3124. DOI: 10.1063/1.368466 |
0.319 |
|
| 1998 |
Paul W. Chapter 1 High Pressure in Semiconductor Physics: A Historical Overview Semiconductors and Semimetals. 54: 1-48. DOI: 10.1016/S0080-8784(08)60229-X |
0.318 |
|
| 1997 |
Wickboldt P, Pang D, Paul W, Chen JH, Chen C, Cohen JD. Ambipolar Phototransport (μτ e = μτ h ) Observed as an Intrinsic Property of a-SiGe:H Mrs Proceedings. 467. DOI: 10.1557/Proc-467-263 |
0.439 |
|
| 1997 |
Wickboldt P, Pang D, Paul W, Chen JH, Zhong F, Chen C, Cohen JD, Williamson DL. High performance glow discharge a-Si1−xGex:H of large x Journal of Applied Physics. 81: 6252-6267. DOI: 10.1063/1.364413 |
0.395 |
|
| 1996 |
Cheong HM, Paul W, Withrow SP, Zhu JG, Budai JD, White CW, Hembree DM. Hydrostatic pressure dependence of the photoluminescence of Si nanocrystals in SiO2 Applied Physics Letters. 68: 87-89. DOI: 10.1063/1.116767 |
0.406 |
|
| 1996 |
Wickboldt P, Pang D, Chen JH, Cheong HM, Paul W. Examination of (crystallized a-Ge:H)/a-SiNx:H multilayers which display photoluminescence Journal of Non-Crystalline Solids. 198200: 813-816. DOI: 10.1016/0022-3093(96)00039-7 |
0.381 |
|
| 1996 |
Wickboldt P, Pang D, Paul W, Chen JH, Zhong F, Cohen JD, Chen Y, Williamson DL. Improved a-Si1 − xGex:H of large x deposited by PECVD Journal of Non-Crystalline Solids. 198200: 567-571. DOI: 10.1016/0022-3093(95)00765-2 |
0.405 |
|
| 1996 |
Chen JH, Pang D, Wickboldt P, Cheong HM, Paul W. Visible room-temperature photoluminescence from oxidized germanium Journal of Non-Crystalline Solids. 198200: 128-131. DOI: 10.1016/0022-3093(95)00666-4 |
0.424 |
|
| 1996 |
Corey RL, Kernan MJ, Leopold DJ, Fedders PA, Norberg RE, Turner WA, Paul W. Stability of the number of silicon-hydrogen bonds upon photoillumination of undoped amorphous hydrogenated silicon Journal of Non-Crystalline Solids. 198: 65-68. DOI: 10.1016/0022-3093(95)00659-1 |
0.404 |
|
| 1995 |
Zhong F, Chen C, Cohen JD, Wickboldt P, Paul W. Defect Properties of Cathode Deposited Glow Discharge Amorphous Silicon Germanium Alloys Mrs Proceedings. 377: 553. DOI: 10.1557/Proc-377-553 |
0.355 |
|
| 1995 |
Chen JH, Pang D, Cheong HM, Wickboldt P, Paul W. Room‐temperature 1.5 μm luminescence of co‐deposited erbium and germanium Applied Physics Letters. 67: 2182-2184. DOI: 10.1063/1.115096 |
0.416 |
|
| 1995 |
Cheong HM, Burnett JH, Paul W, Koteles ES, Elman B. Observation of an optical switching effect in GaAs/AlGaAs quantum wells under hydrostatic pressure Journal of Physics and Chemistry of Solids. 56: 375-379. DOI: 10.1016/0022-3697(94)00213-4 |
0.371 |
|
| 1994 |
Moon JA, Tauc J, Lee J, Schiff EA, Wickboldt P, Paul W. Femtosecond photomodulation spectroscopy of a-Si:H and a-Si:Ge:H alloys in the midinfrared. Physical Review. B, Condensed Matter. 50: 10608-10618. PMID 9975157 DOI: 10.1103/Physrevb.50.10608 |
0.662 |
|
| 1994 |
Wickboldt P, Pang D, Paul W. A Basic Study of the GeH4 + H2 RF Discharge Mrs Proceedings. 336. DOI: 10.1557/Proc-336-547 |
0.331 |
|
| 1994 |
Liu EZ, Wickboldt P, Wetsel AE, Pang D, Chen JH, Paul W. Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model Philosophical Magazine Part B. 70: 109-120. DOI: 10.1080/01418639408240199 |
0.464 |
|
| 1994 |
Burnett JH, Cheong HM, Westervelt RM, Paul W, Hopkins PF, Sundaram M, Gossard AC. Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-x quantum wells in a magnetic field Surface Science. 305: 208-214. DOI: 10.1016/0039-6028(94)90886-9 |
0.315 |
|
| 1993 |
Burnett JH, Cheong HM, Westervelt RM, Paul W, Hopkins PF, Sundaram M, Gossard AC. Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 48: 4524-4529. PMID 10008931 DOI: 10.1103/Physrevb.48.4524 |
0.314 |
|
| 1993 |
Burnett JH, Cheong HM, Paul W, Hopkins PF, Gossard AC. Pressure Dependence of the Harmonic Oscillator Levels of AlxGa1-xAs Parabolic Quantum Wells Japanese Journal of Applied Physics. 32: 75-77. DOI: 10.7567/Jjaps.32S1.75 |
0.34 |
|
| 1993 |
Chan PH, Fedders PA, Norberg RE, Paul W, Pang D, Wickboldt P. Proton and deuteron double resonance studies of structural differences between amorphous Si and Ge films Materials Research Society Symposium Proceedings. 297: 741-745. DOI: 10.1557/Proc-297-741 |
0.397 |
|
| 1993 |
Cheong HM, Burnett JH, Paul W, Young PM, Lansari Y, Schetzina JF. Photoluminescence of HgTe/CdTe superlattices under high hydrostatic pressures Physical Review B. 48: 4460-4463. DOI: 10.1103/Physrevb.48.4460 |
0.392 |
|
| 1993 |
Cheong HM, Burnett JH, Paul W, Young PM, Lansari Y, Schetzina JF. Pressure dependence of infrared photoluminescence spectra from HgTe/CdTe superlattices Semiconductor Science and Technology. 8. DOI: 10.1088/0268-1242/8/1S/013 |
0.366 |
|
| 1993 |
Paul W, Lewis A, Connell G, Moustakas T. Doping, Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering Solid State Communications. 88: 1019-1022. DOI: 10.1016/0038-1098(93)90287-W |
0.355 |
|
| 1993 |
Paul W, Chen JH, Liu EZ, Wetsel AE, Wickboldt P. The mott lecture. Structural and electronic properties of amorphous SiGe:H alloys Journal of Non-Crystalline Solids. 1-10. DOI: 10.1016/0022-3093(93)90479-H |
0.451 |
|
| 1993 |
Paul W, Street RA, Wagner S. Hydrogenated amorphous semiconductors Journal of Electronic Materials. 22: 39-48. DOI: 10.1007/Bf02665722 |
0.357 |
|
| 1992 |
Chen JH, Wickboldt P, Pang D, Wetsel AE, Paul W. Effects of Gas Dilution on the Growth and Properties of Glow Discharge a-Ge:H Mrs Proceedings. 258: 547. DOI: 10.1557/Proc-258-547 |
0.323 |
|
| 1992 |
Liu EZ, Pang D, Paul W, Chen JH. Time-of-Flight Measurement on a-Ge:H and a-SiGe:H Alloys Mrs Proceedings. 258. DOI: 10.1557/Proc-258-529 |
0.372 |
|
| 1992 |
Norberg RE, Bodart J, Corey R, Fedders PA, Paul W, Turner WA, Pang D, Wetsel A. Deuteron Magnetic Resonance Studies of Structure and Photo-Induced Metastable Rearrangements in Deuterated Amorphous Si, Ge and SiGe Films Mrs Proceedings. 258. DOI: 10.1557/Proc-258-377 |
0.395 |
|
| 1992 |
Paul W, Jones SJ, Turner WA, Wickboldt P. Structural properties of amorphous hydrogenated germanium Journal of Non-Crystalline Solids. 141: 271-286. DOI: 10.1016/S0022-3093(05)80542-3 |
0.396 |
|
| 1992 |
Hong SJ, Lee C, Jang J, Paul W. Direct Evidence Of Geminate Recombination In Hydrogenated Amorphous-Silicon At Low-Temperature Solid State Communications. 82: 131-134. DOI: 10.1016/0038-1098(92)90686-4 |
0.337 |
|
| 1991 |
Li Y-, Paul W. Comments on the Determination of Defect Density in a-Si:H Alloys by Integrating the Sub-Bandgap Optical Absorption Coefficient Mrs Proceedings. 219. DOI: 10.1557/Proc-219-587 |
0.444 |
|
| 1991 |
Chen L, Tauc J, Pang D, Turner WA, Paul W. States in the Gap of Improved a-Ge:H Studied by Photomodulation Spectroscopy Mrs Proceedings. 219. DOI: 10.1557/Proc-219-575 |
0.402 |
|
| 1991 |
Norberg RE, Fedders PA, Bodart J, Corey R, Kim YW, Paul W, Turner W. Correlation of Structure and Structural Changes with Photovoltaic Quality of a-Si:D,H and a-Ge:D,H Films Mrs Proceedings. 219. DOI: 10.1557/Proc-219-223 |
0.409 |
|
| 1991 |
Paul W, Jones SJ, Marques FC, Pang D, Turner WA, Wetsel AE, Wickboldt P, Chen JH. Influence of Deposition Conditions on the optical and Electronic Properties of a-Ge:H Mrs Proceedings. 219. DOI: 10.1557/Proc-219-211 |
0.473 |
|
| 1991 |
Wickboldt BP, Jones SJ, Marques FC, Pang D, Turner WA, Wetsel AE, Paul W, Chen JH. A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties Philosophical Magazine B. 64: 655-674. DOI: 10.1080/13642819108207628 |
0.356 |
|
| 1991 |
Paul W, Jones SJ, Turner WA. Studies on the structure of a-ge: H using differential scanning calorimetry, gas evolution on heating and transmission electron microscopy Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 63: 247-268. DOI: 10.1080/01418639108224443 |
0.409 |
|
| 1991 |
Paul W. Structural, optical and photoelectronic properties of improved PECVD a-Ge:H Journal of Non-Crystalline Solids. 803-808. DOI: 10.1016/S0022-3093(05)80242-X |
0.459 |
|
| 1991 |
Wraback M, Tauc J, Pang D, Paul W, Lee JK, Schiff EA. Femtosecond studies of photoinduced bleaching and hot carrier dynamics in a-Si:H and a-Ge:H Journal of Non-Crystalline Solids. 137: 531-534. DOI: 10.1016/S0022-3093(05)80172-3 |
0.678 |
|
| 1991 |
Lee C, Turner W, Paul W. True position of dangling bonds in the gap of undoped hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 137: 367-370. DOI: 10.1016/S0022-3093(05)80132-2 |
0.374 |
|
| 1991 |
Wickboldt P, Marques F, Jones SJ, Pang D, Turner WA, Paul W. Stress measurement of glow discharge produced a-Ge:H thin films and its relation to electronic and structural properties Journal of Non-Crystalline Solids. 83-86. DOI: 10.1016/S0022-3093(05)80062-6 |
0.327 |
|
| 1991 |
Norberg RE, Fedders PA, Bodart J, Corey R, Paul W, Turner W, Jones S. Connections between photovoltaic quality and the structure of deuterated amorphous Si and Ge films Journal of Non-Crystalline Solids. 137: 71-73. DOI: 10.1016/S0022-3093(05)80059-6 |
0.43 |
|
| 1991 |
Burnett JH, Cheong HM, Paul W, Hopkins PF, Rimberg AJ, Westervelt RM, Sundaram M, Gossard AC. Photoluminescence excitation spectroscopy of wide parabolic GaAs AlGaAs quantum wells Superlattices and Microstructures. 10: 167-170. DOI: 10.1016/0749-6036(91)90223-E |
0.369 |
|
| 1991 |
Turner W, Jones S, Li Y, Pang D, Wetsel A, Paul W. Structural, optical, and electrical studies of amorphous hydrogenated germanium Solar Cells. 30: 245-254. DOI: 10.1016/0379-6787(91)90056-U |
0.445 |
|
| 1991 |
Cheong HM, Burnett JH, Paul W. Photoluminescence of CdTe under hydrostatic pressure Solid State Communications. 77: 565-566. DOI: 10.1016/0038-1098(91)90924-K |
0.336 |
|
| 1990 |
Jones SJ, Turner WA, Pang D, Paul W. An Electron Microscopy Study of the effects of Deposition Conditions on the Growth of Glow Discharge Prepared a-Ge:H Films. Mrs Proceedings. 202. DOI: 10.1557/Proc-202-43 |
0.345 |
|
| 1990 |
Jones S, Turner W, Pang D, Paul W. The Effect of Sample Substrate on the Structural Properties of Co-Deposited Films of A-Ge:H Mrs Proceedings. 192. DOI: 10.1557/Proc-192-553 |
0.355 |
|
| 1990 |
Wetsel AE, Jones SJ, Turner WA, Pang D, Paul W, El Zawawi I, Bouizem Y, Chahed L, Theye ML, Marques FC, Chambouleyron I. Comparison of the Properties of Sputtered and Glow Discharge a-Ge:H Films Mrs Proceedings. 192. DOI: 10.1557/Proc-192-547 |
0.473 |
|
| 1990 |
Turner WA, Pang D, Wetsel AE, Jones SJ, Paul W, Chen J. Optimization of the Properties of Undoped a-Ge:H Mrs Proceedings. 192. DOI: 10.1557/Proc-192-493 |
0.465 |
|
| 1990 |
Turner WA, Jones SJ, Pang D, Bateman BF, Chen JH, Li YM, Marques FC, Wetsel AE, Wickboldt P, Paul W, Bodart J, Norberg RE, El Zawawi I, Theye ML. Structural, optical, and electrical characterization of improved amorphous hydrogenated germanium Journal of Applied Physics. 67: 7430-7438. DOI: 10.1063/1.344533 |
0.426 |
|
| 1989 |
Turner WA, Jones SJ, Lee C, Lee SM, Li Y, Paul W. The Effect of Hydrogen Dilution of the Gas Plasma on Glow Discharge a-Ge:H Mrs Proceedings. 149. DOI: 10.1557/Proc-149-69 |
0.405 |
|
| 1989 |
Jones SJ, Lee SM, Turner WA, Paul W. Substrate Temperature Dependence of the Structural Properties of Glow Discharge Produced a-Ge:H Mrs Proceedings. 149. DOI: 10.1557/Proc-149-45 |
0.365 |
|
| 1989 |
Li YM, Turner WA, Lee C, Paul W. Substrate Temperature Dependence of the Optical and Electronic Properties of Glow Discharge Produced a-Ge:H Mrs Proceedings. 149: 187-192. DOI: 10.1557/Proc-149-187 |
0.392 |
|
| 1989 |
Lee SM, Jones SJ, Li Y, Turner WA, Paul W. Comparison of the structural properties of a-Si:H prepared from SiH4 and SiH4 + H2 plasmas, and correlation of the structure with the photoelectronic properties Philosophical Magazine B. 60: 547-564. DOI: 10.1080/13642818908205927 |
0.434 |
|
| 1989 |
Burnett JH, Cheong HM, Paul W, Koteles ES, Elman B. Modification of the coupling of double quantum wells through band structure changes under hydrostatic pressure Superlattices and Microstructures. 6: 167-170. DOI: 10.1016/0749-6036(89)90115-8 |
0.383 |
|
| 1989 |
Zallen R, Holtz M, Geissberger AE, Sadler RA, Paul W, Thèye ML. Raman-scattering studies of implantation-amorphized gallium arsenide: Comparison to sputtered and evaporated a-GaAs films Journal of Non-Crystalline Solids. 114: 795-797. DOI: 10.1016/0022-3093(89)90723-0 |
0.581 |
|
| 1989 |
Volz MP, Fedders PA, Norberg RE, Turner W, Paul W. Deuteron magnetic resonance in amorphous germanium Journal of Non-Crystalline Solids. 114: 546-548. DOI: 10.1016/0022-3093(89)90645-5 |
0.354 |
|
| 1989 |
Jones SJ, Turner WA, Paul W. The effect of sample substrate on the structural properties of co-deposited a-Ge:H films Journal of Non-Crystalline Solids. 114: 525-527. DOI: 10.1016/0022-3093(89)90638-8 |
0.385 |
|
| 1987 |
Mackenzie KD, Paul W. Comparison of Properties of a-Si 1− x Ge x :H and a-Si 1− x Ge x :H:F Mrs Proceedings. 95. DOI: 10.1557/Proc-95-281 |
0.454 |
|
| 1987 |
Mackenzie KD, Paul W. Transient and steady-state photoconductivity in a-Si1−xGex:H,F alloys☆ Journal of Non-Crystalline Solids. 1055-1058. DOI: 10.1016/0022-3093(87)90253-5 |
0.417 |
|
| 1987 |
Mackenzie KD, Burnett JH, Eggert JR, Li YM, Paul W. Improvement of photoconductive response in amorphous silicon-germanium alloys produced from fluorides instead of hydrides Journal of Non-Crystalline Solids. 1019-1022. DOI: 10.1016/0022-3093(87)90245-6 |
0.406 |
|
| 1987 |
Chahed L, Vuye G, Thèye ML, Li YM, MacKenzie KD, Paul W. Comparative study of the optical absorption spectra of amorphous hydrogenated silicon derived from photothermal deflection spectroscopy and photoconductivity measurements Journal of Non-Crystalline Solids. 727-730. DOI: 10.1016/0022-3093(87)90171-2 |
0.42 |
|
| 1986 |
Bork VP, Fedders PA, Norberg RE, Leopold DJ, Mackenzie KD, Paul W. DEUTERON MAGNETIC RESONANCE IN a-Si AND a-SiGe PRODUCED FROM FLUORIDES. Materials Research Society Symposia Proceedings. 70: 307-312. DOI: 10.1557/Proc-70-307 |
0.344 |
|
| 1985 |
Mackenzie KD, Eggert JR, Leopold DJ, Li YM, Lin S, Paul W. Structural, electrical, and optical properties of a-Si1-xGex:H and an inferred electronic band structure. Physical Review. B, Condensed Matter. 31: 2198-2212. PMID 9936027 DOI: 10.1103/Physrevb.31.2198 |
0.44 |
|
| 1985 |
Kirby PB, Macleod DW, Paul W. Surface-field measurements in low-mobility semiconductors Philosophical Magazine Part B. 51: 389-396. DOI: 10.1080/13642818508240586 |
0.352 |
|
| 1985 |
Mackenzie KD, Hanna J, Eggert JR, Li YM, Sun ZL, Paul W. Properties of a-Si1−xGex:H and a-Si1−xGex:H:F alloys Journal of Non-Crystalline Solids. 881-884. DOI: 10.1016/0022-3093(85)90801-4 |
0.394 |
|
| 1985 |
Bork VP, Fedders PA, Norberg RE, Leopold DJ, Mackenzie KD, Paul W. Deuteron magnetic resonance in a-Ge:D, H and a-Si:D, H Journal of Non-Crystalline Solids. 77: 715-718. DOI: 10.1016/0022-3093(85)90758-6 |
0.337 |
|
| 1985 |
Eggert JR, Paul W. Midgap electroabsorption in amorphous silicon-based schottky diodes Journal of Non-Crystalline Solids. 559-562. DOI: 10.1016/0022-3093(85)90722-7 |
0.355 |
|
| 1985 |
Burnett JH, Sun ZL, Mackenzie KD, Li YM, Eggert JR, Paul W. Neutron transmutation doping of a-Si:H Journal of Non-Crystalline Solids. 523-526. DOI: 10.1016/0022-3093(85)90713-6 |
0.452 |
|
| 1984 |
Ellis FB, Gordon RG, Paul W, Yacobi BG. Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition Journal of Applied Physics. 55: 4309-4317. DOI: 10.1063/1.333042 |
0.472 |
|
| 1984 |
Kirby PB, Eggert JR, Mackenzie KD, Paul W. Time-of-flight studies on compensated aSi:H Journal of Non-Crystalline Solids. 66: 181-186. DOI: 10.1016/0022-3093(84)90318-1 |
0.37 |
|
| 1983 |
Kirby PB, Paul W, Lee C, Lin S, Roedern BV, Weisfield RL. Parts-per-million-phosphorus doping of a-Si:H: Changes in carrier lifetime Physical Review B. 28: 3635-3638. DOI: 10.1103/Physrevb.28.3635 |
0.439 |
|
| 1983 |
Kirby PB, Paul W. Photo-induced mid-gap absorption and transient photoconductivity in the a-Si:H system Journal of Non-Crystalline Solids. 453-456. DOI: 10.1016/0022-3093(83)90618-X |
0.443 |
|
| 1983 |
Collins RW, Paul W. Saturation of band tail states in a-Si:H Journal of Non-Crystalline Solids. 369-372. DOI: 10.1016/0022-3093(83)90597-5 |
0.45 |
|
| 1983 |
Ellis FB, Gordon RG, Paul W, Yacobi BG. Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition Journal of Non-Crystalline Solids. 719-722. DOI: 10.1016/0022-3093(83)90272-7 |
0.482 |
|
| 1982 |
Von Roedern B, Paul DK, Blake J, Collins RW, Moddel G, Paul W. Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphous Si1-xGex alloys Physical Review B. 25: 7678-7687. DOI: 10.1103/Physrevb.25.7678 |
0.676 |
|
| 1982 |
Kirby PB, Paul W. Carrier propagation in sputtered a -Si:H Physical Review B. 25: 5373-5383. DOI: 10.1103/Physrevb.25.5373 |
0.417 |
|
| 1982 |
Collins RW, Paul W. Nongeminate radiative recombination in sputtered and glow discharge a -Si:H Physical Review B. 25: 5263-5266. DOI: 10.1103/Physrevb.25.5263 |
0.484 |
|
| 1982 |
Collins RW, Paul W. Model for the temperature dependence of photoluminescence in a -Si:H and related materials Physical Review B. 25: 5257-5262. DOI: 10.1103/Physrevb.25.5257 |
0.48 |
|
| 1982 |
Collins RW, Paul W. Time-resolved photoluminescence spectra in sputtered a -Si:H Physical Review B. 25: 2611-2615. DOI: 10.1103/Physrevb.25.2611 |
0.403 |
|
| 1982 |
Anderson DA, Paul W. Transport properties of a-si: H alloys prepared by r.f. sputtering ii. the effects of doping Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 45: 1-23. DOI: 10.1080/13642818208246385 |
0.408 |
|
| 1982 |
Lachter A, Weisfield RL, Paul W. Bulk and interface Gap states in a-Si:H: A comparative study of field effect and capacitance measurements on codeposited samples Solar Energy Materials. 7: 263-279. DOI: 10.1016/0165-1633(82)90001-6 |
0.401 |
|
| 1982 |
Kirby PB, Paul W, Ray S, Tauc J. Comparison of the dispersion parameters from time-of-flight and photo-induced midgap absorption measurements on sputtered a-Si:H Solid State Communications. 42: 533-535. DOI: 10.1016/0038-1098(82)90637-8 |
0.666 |
|
| 1981 |
Paul W, Paul DK, Roedern Bv, Blake J, Oguz S. Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density Physical Review Letters. 46: 1016-1020. DOI: 10.1103/Physrevlett.46.1016 |
0.452 |
|
| 1981 |
Yacobi BG, Collins RW, Moddel G, Viktorovitch P, Paul W. Effect of oxygen on the optoelectronic properties of amorphous hydrogenated silicon Physical Review B. 24: 5907-5912. DOI: 10.1103/Physrevb.24.5907 |
0.678 |
|
| 1981 |
Anderson DA, Paul W. Transport properties of a-Si: H alloys prepared by r.f. sputtering I Philosophical Magazine Part B. 44: 187-213. DOI: 10.1080/01418638108222557 |
0.414 |
|
| 1981 |
Viktorovitch P, Moddel G, Blake J, Oguz S, Weisfield RL, Paul W. DENSITY OF STATES STUDY IN SPUTTERED a-Si : H : EFFECT OF IMPURITIES AND H RELATED DEFECTS Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:1981495 |
0.646 |
|
| 1981 |
Oguz S, Paul DK, Blake J, Collins RW, Lachter A, Yacobi BG, Paul W. INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm-1 IR ABSORPTION BAND Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:19814150 |
0.479 |
|
| 1981 |
Collins RW, Paul W. TIME RESOLVED PHOTOLUMINESCENCE SPECTRA OF SPUTTERED a-Si:H Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:19814129 |
0.441 |
|
| 1981 |
Paul W, Anderson DA. Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering Solar Energy Materials. 5: 229-316. DOI: 10.1016/0165-1633(81)90001-0 |
0.443 |
|
| 1980 |
Paesler MA, Paul W. Photoluminescence in sputtered amorphous silicon-hydrogen alloys Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 41: 393-417. DOI: 10.1080/13642818008245396 |
0.46 |
|
| 1980 |
Collins RW, Paesler MA, Paul W. The temperature dependence of photoluminescence in a-Si: H alloys Solid State Communications. 34: 833-836. DOI: 10.1016/0038-1098(80)91062-5 |
0.433 |
|
| 1980 |
Paul W. Dissent from the dihydride model of the vibrational spectra of amorphous silicon-hydrogen alloys Solid State Communications. 34: 283-285. DOI: 10.1016/0038-1098(80)90558-X |
0.413 |
|
| 1980 |
Paul DK, Blake J, Oguz S, Paul W. Vibrational properties of hydrogenated amorphous GaAs Journal of Non-Crystalline Solids. 501-506. DOI: 10.1016/0022-3093(80)90644-4 |
0.329 |
|
| 1980 |
Anderson DA, Moddel G, Paul W. Characterization of high gap state densitites in heavily hydrogenated a-Si Journal of Non-Crystalline Solids. 35: 345-350. DOI: 10.1016/0022-3093(80)90618-3 |
0.682 |
|
| 1980 |
Oguz S, Collins RW, Paesler MA, Paul W. Effects of partial evolution of H from a-Si:H on the infrared vibrational spectra and the photoluminescence Journal of Non-Crystalline Solids. 35: 231-236. DOI: 10.1016/0022-3093(80)90599-2 |
0.42 |
|
| 1980 |
Ackley DE, Tauc J, Paul W. Picosecond relaxations in amorphous semiconductors Journal of Non-Crystalline Solids. 957-961. DOI: 10.1016/0022-3093(80)90324-5 |
0.665 |
|
| 1980 |
Collins RW, Paesler MA, Moddel G, Paul W. Photoluminescence in sputtered amorphous Si:H alloys Journal of Non-Crystalline Solids. 35: 681-686. DOI: 10.1016/0022-3093(80)90283-5 |
0.702 |
|
| 1980 |
Anderson DA, Moddel G, Paul W. An assessment of the suitability of rf sputtered amorphous hydrogenated Si as a potential solar cell material Journal of Electronic Materials. 9: 141-152. DOI: 10.1007/Bf02655220 |
0.673 |
|
| 1979 |
Ackley DE, Tauc J, Paul W. Picosecond Relaxation of Optically Induced Absorption in Amorphous Semiconductors Physical Review Letters. 43: 715-718. DOI: 10.1103/Physrevlett.43.715 |
0.598 |
|
| 1979 |
Freeman EC, Paul W. Optical constants of rf sputtered hydrogenated amorphous Si Physical Review B. 20: 716-728. DOI: 10.1103/Physrevb.20.716 |
0.481 |
|
| 1979 |
Paul W, Cardona M, Allen PB. Nigel J. Shevchik Physics Today. 32: 62-62. DOI: 10.1063/1.2995631 |
0.337 |
|
| 1979 |
Anderson DA, Moddel G, Collins RW, Paul W. The effect of gap state density on the photoconductivity and photoluminescence of a-Si:H Solid State Communications. 31: 677-681. DOI: 10.1016/0038-1098(79)90322-3 |
0.682 |
|
| 1978 |
Freeman EC, Paul W. Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon Physical Review B. 18: 4288-4300. DOI: 10.1103/Physrevb.18.4288 |
0.44 |
|
| 1977 |
Moustakas TD, Anderson DA, Paul W. Preparation of highly photoconductive amorphous silicon by rf sputtering Solid State Communications. 23: 155-158. DOI: 10.1016/0038-1098(77)90099-0 |
0.433 |
|
| 1974 |
Shevchik NJ, Paul W. Voids in amorphous semiconductors Journal of Non-Crystalline Solids. 16: 55-71. DOI: 10.1016/0022-3093(74)90068-4 |
0.319 |
|
| 1973 |
Connell G, Temkin R, Paul W. Amorphous germanium III. Optical properties Advances in Physics. 22: 643-665. DOI: 10.1080/00018737300101359 |
0.387 |
|
| 1973 |
Temkin R, Paul W, Connell G. Amorphous germanium II. Structural properties Advances in Physics. 22: 581-641. DOI: 10.1080/00018737300101349 |
0.324 |
|
| 1973 |
Paul W, Connell G, Temkin R. Amorphous germanium I. A model for the structural and optical properties Advances in Physics. 22: 531-580. DOI: 10.1080/00018737300101339 |
0.384 |
|
| 1973 |
Shevchik NJ, Paul W. The structure of tetrahedrally coordinated amorphous semiconductors Journal of Non-Crystalline Solids. 13: 1-12. DOI: 10.1016/0022-3093(73)90032-X |
0.327 |
|
| 1972 |
Connell GAN, Camphausen DL, Paul W. Theory of Poole-Frenkel conduction in low-mobility semiconductors Philosophical Magazine. 26: 541-551. DOI: 10.1080/14786437208230103 |
0.316 |
|
| 1972 |
Temkin R, Connell G, Paul W. Structural and optical properties of amorphous GexSn1-x alloys Solid State Communications. 11: 1591-1595. DOI: 10.1016/0038-1098(72)90525-X |
0.333 |
|
| 1972 |
Shevchik NJ, Paul W. The structure of amorphous Ge Journal of Non-Crystalline Solids. 381-387. DOI: 10.1016/0022-3093(72)90164-0 |
0.304 |
|
| 1972 |
Camphausen DL, Connell GAN, Paul W. A model for transport in amorphous germanium Journal of Non-Crystalline Solids. 223-230. DOI: 10.1016/0022-3093(72)90140-8 |
0.386 |
|
| 1972 |
Connell GAN, Paul W. Is there an intimate relation between amorphous and crystalline semiconductors Journal of Non-Crystalline Solids. 215-222. DOI: 10.1016/0022-3093(72)90139-1 |
0.444 |
|
| 1971 |
Camphausen DL, Connell GAN, Paul W. Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond Physical Review Letters. 26: 184-188. DOI: 10.1103/Physrevlett.26.184 |
0.337 |
|
| 1970 |
Paul W. The present position of theory and experiment for VO2 Materials Research Bulletin. 5: 691-702. DOI: 10.1016/0025-5408(70)90110-8 |
0.318 |
|
| 1969 |
McGroddy JC, Nathan MI, Paul W, Porowski S, Smith JE, Dumke WP. The effects of hydrostatic pressure on hot-electron phenomena in n-InSb Ibm Journal of Research and Development. 13: 580-582. DOI: 10.1147/Rd.135.0580 |
0.302 |
|
| 1969 |
Ladd LA, Paul W. Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature Solid State Communications. 7: 425-428. DOI: 10.1016/0038-1098(69)90888-6 |
0.313 |
|
| 1969 |
Porowski S, Paul W, McGroddy JC, Nathan MI, Smith JE. Electron-hole pair production and gunn effect in InSb☆ Solid State Communications. 7: 905-908. DOI: 10.1016/0038-1098(69)90539-0 |
0.34 |
|
| 1969 |
Rossi CE, Paul W. The preparation of NiO thin films and their use in optical measurements in the visible and ultraviolet Journal of Physics and Chemistry of Solids. 30: 2295-2305. DOI: 10.1016/0022-3697(69)90156-5 |
0.366 |
|
| 1968 |
Kosicki BB, Jayaraman A, Paul W. Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbar Physical Review. 172: 764-769. DOI: 10.1103/Physrev.172.764 |
0.358 |
|
| 1967 |
Zallen R, Paul W. Effect of pressure on interband reflectivity spectra of germanium and related semiconductors Physical Review. 155: 703-711. DOI: 10.1103/Physrev.155.703 |
0.667 |
|
| 1967 |
Ludeke R, Paul W. Growth and Optical Properties of Wurtzite and Sphalerite CdSe Epitaxial Thin Films Physica Status Solidi B-Basic Solid State Physics. 23: 413-418. DOI: 10.1002/Pssb.19670230142 |
0.334 |
|
| 1964 |
Zallen R, Paul W. Band structure of gallium phosphide from optical experiments at high pressure Physical Review. 134. DOI: 10.1103/Physrev.134.A1628 |
0.659 |
|
| 1963 |
Feinleib J, Groves S, Paul W, Zallen R. Effect of pressure on the spontaneous and stimulated emission from GaAs Physical Review. 131: 2070-2078. DOI: 10.1103/Physrev.131.2070 |
0.608 |
|
| 1960 |
Cakdona M, Paul W. Pressure dependence of the direct energy gap in germanium Journal of Physics and Chemistry of Solids. 17: 138-142. DOI: 10.1016/0022-3697(60)90184-0 |
0.366 |
|
| 1959 |
Cardona M, Paul W, Brooks H. Dielectric constant of germanium and silicon as a function of volume Journal of Physics and Chemistry of Solids. 8: 204-206. DOI: 10.1016/0022-3697(59)90316-6 |
0.302 |
|
| 1959 |
Paul W. The effect of pressure on the properties of germanium and silicon Journal of Physics and Chemistry of Solids. 8: 196-204. DOI: 10.1016/0022-3697(59)90315-4 |
0.462 |
|
| 1958 |
Paul W, Warschauer DM. Optical properties of semiconductors under hydrostatic pressure—III: Germanium-silicon alloys Journal of Physics and Chemistry of Solids. 6: 6-15. DOI: 10.1016/0022-3697(58)90212-9 |
0.454 |
|
| 1958 |
Paul W, Warschauer DM. Optical properties of semiconductors under hydrostatic pressure—II. Silicon☆ Journal of Physics and Chemistry of Solids. 5: 102-106. DOI: 10.1016/0022-3697(58)90135-5 |
0.393 |
|
| 1958 |
Paul W, Warschauer DM. Optical properties of semiconductors under hydrostatic pressure—I. Germanium Journal of Physics and Chemistry of Solids. 5: 89-101. DOI: 10.1016/0022-3697(58)90134-3 |
0.384 |
|
| 1955 |
Paul W, Pearson GL. Pressure Dependence of the Resistivity of Silicon Physical Review. 98: 1755-1757. DOI: 10.1103/Physrev.98.1755 |
0.313 |
|
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