Leo J. Schowalter, Ph.D - Publications

Affiliations: 
1976-1981 Physics University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
 1987-2005 Physics Rensselaer Polytechnic Institute, Troy, NY, United States 

167 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Grandusky JR, Randive RV, Jordan TC, Schowalter LJ. Fabrication of high performance UVC LEDs on aluminum-nitride semiconductor substrates and theirpotential application in point-of-use water disinfection systems Springer Series in Materials Science. 227: 171-192. DOI: 10.1007/978-3-319-24100-5_7  0.68
2014 Moe CG, Grandusky JR, Chen J, Kitamura K, Mendrick MC, Jamil M, Toita M, Gibb SR, Schowalter LJ. High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037856  0.68
2014 Kitamura K, Grandusky JR, Moe CG, Chen J, Mendrick MC, Li Y, Toita M, Nagase K, Morishita T, Ishii H, Yamada S, Schowalter LJ. S3-P1: Reliability and lifetime of pseudomorphic UVC leds on AlN substrate under various stress condition Lester Eastman Conference 2014 - High Performance Devices, Lec 2014. DOI: 10.1109/LEC.2014.6951561  0.68
2014 Han J, Amano H, Schowalter L. Deep UV LEDs Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/080301  0.68
2014 Moe CG, Garrett GA, Grandusky JR, Chen J, Rodak LE, Rotella P, Wraback M, Schowalter LJ. Correlation between optical and electrical performance of mid-ultraviolet light-emitting diodes on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 786-789. DOI: 10.1002/pssc.201300686  0.68
2013 Grandusky JR, Chen J, Gibb SR, Mendrick MC, Moe CG, Rodak L, Garrett GA, Wraback M, Schowalter LJ. 270nm pseudomorphic ultraviolet light-emitting diodes with over 60mW continuous wave output power Applied Physics Express. 6. DOI: 10.7567/APEX.6.032101  0.68
2013 Moe CG, Chen JJ, Grandusky JR, Mendrick MC, Randive R, Rodak LE, Sampath AV, Wraback M, Schowalter LJ. Pseudomorphic mid-ultraviolet light-emitting diodes for water purification Cleo: Applications and Technology, Cleo_at 2013. JM3O.5.  0.68
2013 Chen J, Grandusky JR, Moe CG, Mendrick MC, Jamil M, Gibb SR, Schowalter LJ. High power pseudomorphic mid ultraviolet light emitting diodes with improved efficiency and lifetime Optics Infobase Conference Papers 0.68
2012 Grandusky JR, Chen J, Mendrick MC, Gibb SR, Schowalter LJ, Moe C, Wraback M. Improved efficiency high power 260 nm pseudomorphic ultraviolet light emitting diodes 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410979  0.68
2012 Chen J, Grandusky JR, Mendrick MC, Gibb SR, Schowalter LJ. Improved photon extraction by substrate thinning and surface roughening in 260 nm pseudomorphic ultraviolet light emitting diodes 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410967  0.68
2012 Grandusky JR, Zhong Z, Chen J, Leung C, Schowalter LJ. Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates Solid-State Electronics. 78: 127-130. DOI: 10.1016/j.sse.2012.05.056  0.68
2012 Chen J, Grandusky JR, Mendrick MC, Gibb SR, Moe C, Wraback M, Kim YS, Lin SY, Schowalter LJ. 260 nm pseudomorphic ultraviolet light emitting diodes with enhanced photon extraction efficiency 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.68
2011 Grandusky JR, Gibb SR, Mendrick MC, Moe C, Wraback M, Schowalter LJ. High output power from 260nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance Applied Physics Express. 4. DOI: 10.1143/APEX.4.082101  0.68
2011 Gibb SR, Grandusky JR, Mendrick M, Schowalter LJ. Performance of pseudomorphic ultraviolet LEDs grown on bulk aluminum nitride substrates International Journal of High Speed Electronics and Systems. 20: 497-504. DOI: 10.1142/S0129156411006787  0.68
2011 Chen J, Grandusky JR, Mendrick MC, Gibb S, Kim YS, Lin SY, Schowalter LJ. Enhanced photon extraction efficiency in 260nm pseudomorphic AlN-based ultraviolet light emitting diodes 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135384  0.68
2011 Schowalter LJ, Grandusky JR, Chen J, Mendrick MC, Gibb SR. Single-chip 260 nm pseudomorphic ultraviolet light emitting diode emitting over 200 mW output power 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135382  0.68
2011 Grandusky JR, Gibb SR, Mendrick M, Schowalter LJ. Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1528-1533. DOI: 10.1002/pssc.201000892  0.68
2011 Grandusky JR, Mendrick MC, Gibb S, Smart JA, Venkatachalam A, Graham S, Schowalter LJ. Development of reliable mW level powers in Pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates Optics Infobase Conference Papers 0.68
2011 Kim YS, Lin SY, Hsieh ML, Schowalter L. Surface modified structure for photon extraction of UV-LED Optics Infobase Conference Papers 0.68
2010 Grandusky JR, Gibb SR, Mendrick MC, Schowalter LJ. Properties of mid-ultraviolet light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates Applied Physics Express. 3. DOI: 10.1143/APEX.3.072103  0.68
2010 Sampath AV, Garrett GA, Readinger ED, Enck RW, Shen H, Wraback M, Grandusky JR, Schowalter LJ. Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates Solid-State Electronics. 54: 1130-1134. DOI: 10.1016/j.sse.2010.05.006  0.68
2010 Garrett GA, Sampath AV, Shen H, Wraback M, Sun W, Shatalov M, Hu X, Yang J, Bilenko Y, Lunev A, Shur MS, Gaska R, Grandusky JR, Schowalter LJ. Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2390-2393. DOI: 10.1002/pssc.200983906  0.68
2010 Grandusky J, Cui Y, Gibb S, Mendrick M, Schowalter L. Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2199-2201. DOI: 10.1002/pssc.200983635  0.68
2010 Garrett GA, Shen H, Wraback M, Grandusky JR, Gibb S, Schowalter LJ. Excitation wavelength dependence of time-resolved photoluminescence in deep-UV MQW LEDs on Bulk AlN Optics Infobase Conference Papers 0.68
2009 Grandusky JR, Smart JA, Mendrick MC, Schowalter LJ, Chen KX, Schubert EF. Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications Journal of Crystal Growth. 311: 2864-2866. DOI: 10.1016/j.jcrysgro.2009.01.101  0.68
2009 Mueller SG, Bondokov RT, Morgan KE, Slack GA, Schujman SB, Grandusky J, Smart JA, Schowalter LJ. The progress of AlN bulk growth and epitaxy for electronic applications Physica Status Solidi (a) Applications and Materials Science. 206: 1153-1159. DOI: 10.1002/pssa.200880758  0.68
2009 Sampath AV, Garrett GA, Sarney WL, Shen H, Wraback M, Grandusky JR, Schowalter LJ. The effects of increasing AlN mole fraction on the performance of AlGaN based ultraviolet light emitting diode active regions Optics Infobase Conference Papers 0.68
2008 Bondokov RT, Mueller SG, Morgan KE, Slack GA, Schujman S, Wood MC, Smart JA, Schowalter LJ. Large-area AlN substrates for electronic applications: An industrial perspective Journal of Crystal Growth. 310: 4020-4026. DOI: 10.1016/j.jcrysgro.2008.06.032  0.68
2008 Silveira E, Freitas JA, Schujman SB, Schowalter LJ. AlN bandgap temperature dependence from its optical properties Journal of Crystal Growth. 310: 4007-4010. DOI: 10.1016/j.jcrysgro.2008.06.015  0.68
2008 Schujman SB, Schowalter LJ, Bondokov RT, Morgan KE, Liu W, Smart JA, Bettles T. Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication Journal of Crystal Growth. 310: 887-890. DOI: 10.1016/j.jcrysgro.2007.11.134  0.68
2008 Mitchel WC, Elhamri S, Landis G, Gaska R, Schujman SB, Schowalter LJ. Electrical characterization of AlGaN/GaN on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1550-1552. DOI: 10.1002/pssc.200778470  0.68
2007 Ren Z, Sun Q, Kwon SY, Han J, Davitt K, Song YK, Nurmikko AV, Cho HK, Liu W, Smart JA, Schowalter LJ. Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2766841  0.68
2007 Kneissl M, Yang Z, Teepe M, Knollenberg C, Schmidt O, Kiesel P, Johnson NM, Schujman S, Schowalter LJ. Ultraviolet semiconductor laser diodes on bulk AlN Journal of Applied Physics. 101. DOI: 10.1063/1.2747546  0.68
2007 Ren Z, Sun Q, Kwon SY, Han J, Davitt K, Song YK, Nurmikko AV, Liu W, Smart J, Schowalter L. AlGaN deep ultraviolet LEDs on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2482-2485. DOI: 10.1002/pssc.200674758  0.68
2006 Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Surface acoustic wave velocity in single-crystal AlN substrates. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 53: 251-4. PMID 16471453 DOI: 10.1109/TUFFC.2006.1588412  0.68
2006 Schujman SB, Schowalter LJ, Liu W, Smart J. Very low dislocation density AlN substrates for device applications Proceedings of Spie - the International Society For Optical Engineering. 6121. DOI: 10.1117/12.658180  0.68
2006 Evans SM, Giles NC, Halliburton LE, Slack GA, Schujman SB, Schowalter LJ. Electron paramagnetic resonance of a donor in aluminum nitride crystals Applied Physics Letters. 88. DOI: 10.1063/1.2173237  0.68
2006 Schowalter LJ, Schujman SB, Liu W, Goorsky M, Wood MC, Grandusky J, Shahedipour-Sandvik F. Development of native, single crystal AlN substrates for device applications Physica Status Solidi (a) Applications and Materials Science. 203: 1667-1671. DOI: 10.1002/pssa.200565385  0.68
2006 Bondokov RT, Morgan KE, Slack GA, Schowalter LJ. Fabrication and characterization of 2-inch diameter AIN single-crystal wafers cut from bulk crystals Materials Research Society Symposium Proceedings. 955: 22-27.  0.68
2006 Cartwright AN, Cheung MCK, Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Wetzel C, Li P, Detchprohm T, Nelson JS. Ultrafast carrier dynamics and recombination in green emitting InGaN MQW LED Materials Research Society Symposium Proceedings. 916: 77-87.  0.68
2006 Bondokov RT, Morgan KE, Shetty R, Liu W, Slack GA, Goorsky M, Schowalter LJ. Defect content evaluation in single-crystal AlN wafers Materials Research Society Symposium Proceedings. 892: 763-768.  0.68
2006 Schujman SB, Liu W, Meyer N, Smart JA, Schowalter LJ. Atomic force microscope studies on native AlN substrates Materials Research Society Symposium Proceedings. 892: 769-774.  0.68
2005 Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Liu R, Ponce FA, Cheung M, Cartwright A. Deep gireenn emissnion at 570nm from InGaN/GaN MQW active region growm on bulk AIN substrate Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-8. DOI: 10.1117/12.617829  0.68
2005 Silveira E, Freitas JA, Glembocki OJ, Slack GA, Schowalter LJ. Excitonic structure of bulk AIN from optical reflectivity and cathodoluminescence measurements Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.041201  0.68
2005 Biswas SK, Schowalter LJ, Jung YJ, Vijayaraghavan A, Ajayan PM, Vajtai R. Room-temperature resonant tunneling of electrons in carbon nanotube junction quantum wells Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1915528  0.68
2005 Silveira E, Freitas JA, Slack GA, Schowalter LJ, Kneissl M, Treat DW, Johnson NM. Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film Journal of Crystal Growth. 281: 188-193. DOI: 10.1016/j.jcrysgro.2005.03.024  0.68
2004 Bu G, Ciplys D, Shur MS, Schowalter LJ, Schujman SB, Gaska R. Leaky surface acoustic waves in single-crystal AlN substrate International Journal of High Speed Electronics and Systems. 14: 837-846. DOI: 10.1142/S0129156404002922  0.68
2004 Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride Applied Physics Letters. 84: 4611-4613. DOI: 10.1063/1.1755843  0.68
2004 Silveira E, Freitas JA, Kneissl M, Treat DW, Johnson NM, Slack GA, Schowalter LJ. Near-bandedge cathodoluminescence of an AIN homoepitaxial film Applied Physics Letters. 84: 3501-3503. DOI: 10.1063/1.1738929  0.68
2004 Biswas SK, Vajtai R, Wei B, Meng G, Schowalter LJ, Ajayan PM. Vertically aligned conductive carbon nanotube junctions and arrays for device applications Applied Physics Letters. 84: 2889-2891. DOI: 10.1063/1.1702130  0.68
2003 Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Schujman SB, Schowalter LJ. Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities Applied Physics Letters. 83: 3507-3509. DOI: 10.1063/1.1623322  0.68
2003 Hu X, Deng J, Pala N, Gaska R, Shur MS, Chen CQ, Yang J, Simin G, Khan MA, Rojo JC, Schowalter LJ. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Applied Physics Letters. 82: 1299-1301. DOI: 10.1063/1.1555282  0.68
2003 Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Temperature coefficient of SAW frequency in single crystal bulk AlN Electronics Letters. 39: 755-757. DOI: 10.1049/el:20030488  0.68
2003 Shusterman YV, Yakovlev NL, Dovidenko K, Schowalter LJ. Growth and structure of epitaxial Al and Cu films on CaF2 Thin Solid Films. 443: 23-27. DOI: 10.1016/S0040-6090(03)00927-1  0.68
2003 Raghothamachar B, Dudley M, Rojo JC, Morgan K, Schowalter LJ. X-ray characterization of bulk AIN single crystals grown by the sublimation technique Journal of Crystal Growth. 250: 244-250. DOI: 10.1016/S0022-0248(02)02253-4  0.68
2003 Schowalter LJ, Slack GA, Whitlock JB, Morgan K, Schujman SB, Raghothamachar B, Dudley M, Evans KR. Fabrication of native, single-crystal AlN substrates Physica Status Solidi C: Conferences. 1997-2000. DOI: 10.1002/pssc.200303462  0.68
2003 Silveira E, Freitas JA, Slack GA, Schowalter LJ. Cathodoluminescence studies of large bulk AlN crystals Physica Status Solidi C: Conferences. 2618-2622. DOI: 10.1002/pssc.200303286  0.68
2003 Gaska R, Fareed Q, Tamulaitis G, Yilmaz I, Shur MS, Chen C, Yang J, Kuokstis E, Khan A, Rojo JC, Schowalter LJ. Stimulated Emission at 258 nm in AIN/ALGaN Quantum Wells Grown on Bulk AlN Substrates Materials Research Society Symposium - Proceedings. 764: 375-379.  0.68
2003 Slack GA, Whitlock J, Morgan K, Schowalter LJ. Properties of crucible materials for bulk growth of AlN Materials Research Society Symposium - Proceedings. 798: 293-296.  0.68
2003 Biswas SK, Schujman SB, Vajtai R, Wei B, Parker A, Schowalter LJ, Ajayan PM. AFM-based electrical characterization of nano-structures Materials Research Society Symposium - Proceedings. 738: 331-337.  0.68
2002 Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Deep-ultraviolet emission of AlGaN/AIN quantum wells on bulk AIN Applied Physics Letters. 81: 4658-4660. DOI: 10.1063/1.1524034  0.68
2002 Kuokstis E, Zhang J, Fareed Q, Yang JW, Simin G, Khan MA, Gaska R, Shur M, Rojo C, Schowalter L. Near-band-edge photoluminescence of wurtzite-type AlN Applied Physics Letters. 81: 2755-2757. DOI: 10.1063/1.1510586  0.68
2002 Schujman SB, Vajtai R, Biswas S, Dewhirst B, Schowalter LJ, Ajayan P. Electrical behavior of isolated multiwall carbon nanotubes characterized by scanning surface potential microscopy Applied Physics Letters. 81: 541-543. DOI: 10.1063/1.1490401  0.68
2002 Slack GA, Schowalter LJ, Morelli D, Freitas JA. Some effects of oxygen impurities on AlN and GaN Journal of Crystal Growth. 246: 287-298. DOI: 10.1016/S0022-0248(02)01753-0  0.68
2002 Carlos Rojo J, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Journal of Crystal Growth. 240: 508-512. DOI: 10.1016/S0022-0248(02)01078-3  0.68
2002 Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Rojo JC, Schowalter LJ. The influence of substrate surface polarity on optical properties of GaN grown on single crystal bulk AlN Materials Research Society Symposium - Proceedings. 743: 193-199.  0.68
2002 Hu X, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Growth and characterization of deep UV emitter structures grown on single crystal bulk AlN substrates Materials Research Society Symposium - Proceedings. 743: 439-443.  0.68
2002 Rojo JC, Schowalter LJ, Slack G, Morgan K, Barani J, Schujman S, Biswas S, Raghothamachar B, Dudley M, Shur M, Gaska R, Johnson NM, Kneissl M. Progress in the preparation of aluminum nitride substrates from bulk crystals Materials Research Society Symposium - Proceedings. 722: 5-13.  0.68
2002 Schujman SB, Vajtai R, Shusterman Y, Biswas S, Dewhirst B, Schowalter LJ, Wei BQ, Ajayan PM. AFM-based surface potential measurements on carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 377-382.  0.68
2001 Shusterman YV, Yakovlev NL, Schowalter LJ. Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1) Applied Surface Science. 175: 27-32. DOI: 10.1016/S0169-4332(01)00033-2  0.68
2001 Yakovlev NL, Rojo JC, Schowalter LJ. Morphology of facets on vapor-grown AIN crystals Surface Science. 493: 519-525. DOI: 10.1016/S0039-6028(01)01261-4  0.68
2001 Carlos Rojo J, Slack GA, Morgan K, Raghothamachar B, Dudley M, Schowalter LJ. Report on the growth of bulk aluminum nitride and subsequent substrate preparation Journal of Crystal Growth. 231: 317-321. DOI: 10.1016/S0022-0248(01)01452-X  0.68
2001 Rojo JC, Slack GA, Morgan K, Schowalter LJ, Dudley M. Growth of self-seeded aluminum nitride by sublimation-recondensation and substrate preparation Materials Research Society Symposium - Proceedings. 639: G1.10.1-G1.10.6.  0.68
2001 Rojo JC, Schowalter LJ, Morgan K, Florescu DI, Pollak FH, Raghothamachar B, Dudley M. Single-crystal aluminum nitride substrate preparation from bulk crystals Materials Research Society Symposium Proceedings. 680: 1-7.  0.68
2001 Shusterman YV, Yakovlev NL, Dovidenko K, Schowalter LJ. Epitaxial Al and Cu films grown on CaF2/Si(111) Materials Research Society Symposium - Proceedings. 648: P11381-P11386.  0.68
2000 Schowalter LJ, Rojo JC, Slack GA, Shusterman Y, Wang R, Bhat I, Arunmozhi G. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates Journal of Crystal Growth. 211: 78-81. DOI: 10.1016/S0022-0248(99)00778-2  0.68
2000 Schowalter LJ, Rojo JC, Yakolev N, Shusterman Y, Dovidenko K, Wang R, Bhat I, Slack GA. Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676.  0.68
1999 Kaveev AK, Kyutt RN, Moisseeva MM, Schowalter LJ, Shusterman YV, Sokolov NS, Suturin SM, Yakovlev NL. Molecular beam epitaxy and characterization of CdF2 layers on CaF2(1 1 1) Journal of Crystal Growth. 201: 1105-1108. DOI: 10.1016/S0022-0248(98)01536-X  0.68
1999 Schowalter LJ, Shusterman Y, Wang R, Bhat I, Aninmozhi G, Slack OA. Epitaxial growth of hi-nitride layers on aluminum nitride substrates Materials Research Society Symposium - Proceedings. 537: G3.76.  0.68
1999 Schowalter LJ, Shusterman Y, Wang R, Bhat I, Arunmozhi G, Slack GA. Epitaxial growth of III-Nitride layers on aluminum nitride substrates Mrs Internet Journal of Nitride Semiconductor Research. 4: 6d.  0.68
1998 Labella VP, Shusterman Y, Schowalter LJ, Ventrice CA. Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1692-1696. DOI: 10.1116/1.581286  0.68
1998 Lee BC, Khilko AY, Shusterman YV, Yakovlev NL, Sokolov NS, Kyutt RN, Suturin SM, Schowalter LJ. Structural and electrical characterization of epitaxial CdF2 layers grown on Si(111) and CaF2(111) substrates Applied Surface Science. 123: 590-594.  0.68
1998 LaBella VP, Ventrice CA, Schowalter LJ. Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF2/Si(111) structures Applied Surface Science. 123: 213-218.  0.68
1997 Schujman SB, Soss SR, Stokes K, Schowalter LJ. Self-assembled InAs islands on GaAs(111) substrates Surface Science. 385: L965-L970.  0.68
1997 LaBella VP, Schowalter LJ, Ventrice CA. Scanning tunneling microscopy and ballistic electron emission spectroscopy studies of molecular beam epitaxially grown Pt/CaF2/Si(111) structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1191-1195.  0.68
1997 Ventrice CA, LaBella VP, Schowalter LJ. Design of a scanning tunneling microscope for in situ topographic and spectroscopic measurements within a commercial molecular beam epitaxy machine Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 830-835.  0.68
1997 Persans PD, Deelman PW, Stokes KL, Schowalter LJ, Byrne A, Thundat T. Optical studies of Ge islanding on Si(111) Applied Physics Letters. 70: 472-474.  0.68
1997 Khilko AY, Kyutt RN, Mosina GN, Sokolov NS, Shusterman YV, Schowalter LJ. Structural studies of epitaxial CdF2 layers on Si(111) Materials Research Society Symposium - Proceedings. 441: 457-462.  0.68
1997 Deelman PW, Schowalter LJ, Thundat T. In-situ measurements of islanding and strain relaxation of Ge/Si(111) Materials Research Society Symposium - Proceedings. 441: 373-378.  0.68
1997 Schowalter LJ, Kim BM, Thundat TG, Ventrice CA, LaBella VP. Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF2/Si(111) heterostructures Materials Research Society Symposium - Proceedings. 466: 21-26.  0.68
1996 Ventrice CA, LaBella VP, Ramaswamy G, Yu H, Schowalter LJ. Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy. Physical Review. B, Condensed Matter. 53: 3952-3959. PMID 9983947  0.68
1996 Ventrice CA, LaBella VP, Ramaswamy G, Yu HP, Schowalter LJ. Hot-electron scattering at Au/Si(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopy Applied Surface Science. 104: 274-281. DOI: 10.1016/S0169-4332(96)00215-2  0.68
1996 Deelman PW, Thundat T, Schowalter LJ. AFM and RHEED study of Ge islanding on Si(111) and Si(100) Applied Surface Science. 104: 510-515. DOI: 10.1016/S0169-4332(96)00195-X  0.68
1996 Kim BM, Ventrice CA, Mercer T, Overney R, Schowalter LJ. Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces Applied Surface Science. 104: 409-416. DOI: 10.1016/S0169-4332(96)00179-1  0.68
1996 Schowalter LJ. Substrate engineering with plastic buffer layers Mrs Bulletin. 21: 45-49.  0.68
1996 Deelman PW, Schowalter LJ, Thundat T. Temperature-dependent strain relaxation and islanding of Ge/Si(111) Materials Research Society Symposium - Proceedings. 417: 227-232.  0.68
1996 Stokes KL, Deelman P, Kang HS, Schowalter LJ, Persans PD. Photomodulation spectroscopy of thin Ge films formed by molecular beam epitaxy on Si (111) Materials Research Society Symposium - Proceedings. 417: 165-168.  0.68
1996 Kim BM, Soss SR, Overney RM, Schowalter LJ. Effect of substrate misorientation on the evolution of surface morphology in epitaxially grown CaF2/Si(111) heterostructures Materials Research Society Symposium - Proceedings. 399: 177-182.  0.68
1995 Rodrigues RG, Yang K, Schowalter LJ, Borrego JM. Laser-aided measurements of electric fields on III-V semiconductor structures using modulation spectroscopy: solar cell P-N junctions and [111] strained layer superlattices Materials Science Forum. 173: 355-360.  0.68
1994 Wu Z, Arakawa ET, Inagaki T, Thundat T, Schowalter LJ. Experimental observations of a long-range surface mode in metal island films. Physical Review. B, Condensed Matter. 49: 7782-7785. PMID 10009531 DOI: 10.1103/PhysRevB.49.7782  0.68
1994 Ayers JE, Schowalter LJ. Comment on measurement of the activation barrier to nucleation of dislocations in thin films Physical Review Letters. 72: 4055. DOI: 10.1103/PhysRevLett.72.4055  0.68
1994 Yang K, Anan T, Schowalter LJ. Strain in pseudomorphic films grown on arbitrarily oriented substrates Applied Physics Letters. 65: 2789-2791. DOI: 10.1063/1.112564  0.68
1994 Li W, Anan T, Schowalter LJ. Nucleation of GaAs on CaF2/Si(111) substrates Applied Physics Letters. 65: 595-597. DOI: 10.1063/1.112310  0.68
1994 Yang K, Schowalter LJ, Thundat T. Diffusion length of Ga adatoms on GaAs (1̄1̄1̄) surface in the 19 ×19 reconstruction growth regime Applied Physics Letters. 64: 1641-1643. DOI: 10.1063/1.111817  0.68
1994 Li W, Anan T, Schowalter LJ. Optimization of GaAs epitaxy on CaF2/Si(111) substrates Journal of Crystal Growth. 135: 78-84. DOI: 10.1016/0022-0248(94)90728-5  0.68
1994 Schowalter LJ, Yang K, Thundat T, .Orr B. Atomic step organization in homoepitaxial growth on GaAs(111)B substrates Scanning Microscopy. 8: 889-896.  0.68
1994 Turner BR, Schowalter LJ, Lee EY, Jimenez JR. Study of PtSi/Si(100) interfaces by ballistic-electron-emission microscopy Materials Research Society Symposium Proceedings. 320: 217-220.  0.68
1994 Rodrigues RG, Yang K, Schowalter LJ, Borrego JM. Photoreflectance characterization of InGaAs/GaAs superlattices grown on [111]-oriented substrates Materials Research Society Symposium Proceedings. 324: 217-223.  0.68
1993 Wu Z, Arakawa ET, Jimenez JR, Schowalter LJ. Optical properties of epitaxial CoSi2 on Si from 0.062 to 22.3 eV. Physical Review. B, Condensed Matter. 47: 4356-4362. PMID 10006582 DOI: 10.1103/PhysRevB.47.4356  0.68
1993 Thundat T, Zheng XY, Chen GY, Sharp SL, Warmack RJ, Schowalter LJ. Characterization of atomic force microscope tips by adhesion force measurements Applied Physics Letters. 63: 2150-2152. DOI: 10.1063/1.110569  0.68
1993 Schowalter LJ, Li W. Residual strains in epitaxial fluorides on Si(111) substrates Applied Physics Letters. 62: 696-698. DOI: 10.1063/1.108843  0.68
1993 Yang K, Schowalter LJ, Thundat TG. Estimation of surface diffusion length from AFM images of faceted GaAs(1|1|1|) homoepitaxial films Materials Research Society Symposium Proceedings. 280: 143-146.  0.68
1993 Taylor AP, Kim BM, Persans PD, Schowalter LJ. Si and Ge nanocrystallites embedded in CaF2 by molecular beam epitaxy (MBE) Materials Research Society Symposium Proceedings. 298: 103-107.  0.68
1993 Taylor AP, Stokes K, Wu ZC, Persans PD, Schowalter LJ, LeGoues FK. Nanocrystallites of Si embedded in CaF2 by molecular beam epitaxy (MBE) Materials Research Society Symposium Proceedings. 283: 71-75.  0.68
1993 Lee. E.Y., Turner BR, Jimenez JR, Schowalter LJ. Imaging of metal/semiconductor interface by ballistic-electron-emission microscopy (BEEM) Materials Research Society Symposium Proceedings. 295: 231-234.  0.68
1992 Zhang X, Jin Y, Yang K, Schowalter LJ. Resonant nonlinear susceptibility near the GaAs band gap. Physical Review Letters. 69: 2303-2306. PMID 10046450 DOI: 10.1103/PhysRevLett.69.2303  0.68
1992 Lee EY, Schowalter LJ. Electron-hole pair creation and metal/semiconductor interface scattering observed by ballistic-electron-emission microscopy. Physical Review. B, Condensed Matter. 45: 6325-6328. PMID 10000391 DOI: 10.1103/PhysRevB.45.6325  0.68
1992 Wu ZC, Arakawa ET, Jimenez JR, Schowalter LJ. Optical properties of epitaxial CoSi2/Si and CoSi2 particles in Si from 0.062 to 2.76 eV Journal of Applied Physics. 71: 5601-5605. DOI: 10.1063/1.350539  0.68
1992 Yang K, Schowalter LJ. Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy Applied Physics Letters. 60: 1851-1853. DOI: 10.1063/1.107188  0.68
1992 Ayers JE, Schowalter LJ, Ghandhi SK. Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy Journal of Crystal Growth. 125: 329-335. DOI: 10.1016/0022-0248(92)90346-K  0.68
1991 Schowalter LJ, Lee EY. Role of elastic scattering in ballistic-electron-emission microscopy of Au/Si(001) and Au/Si(111) interfaces. Physical Review. B, Condensed Matter. 43: 9308-9311. PMID 9996614 DOI: 10.1103/PhysRevB.43.9308  0.68
1991 Taylor AP, Yang K, Schowalter LJ. High temperature Knudsen cell with graphite heating element Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 3181-3182. DOI: 10.1116/1.577143  0.68
1991 Lee EY, Schowalter LJ. Phonon scattering and quantum mechanical reflection at the Schottky barrier Journal of Applied Physics. 70: 2156-2162. DOI: 10.1063/1.349453  0.68
1991 Rajan K, Hsiung LM, Jimenez JR, Schowalter LJ, Ramanathan KV, Thompson RD, Iyer SS. Microstructural stability of epitaxial CoSi2/Si (001) interfaces Journal of Applied Physics. 70: 4853-4856. DOI: 10.1063/1.349026  0.68
1991 Luo L, Muenchausen RE, Maggiore CJ, Jimenez JR, Schowalter LJ. Growth of YBa2Cu3O7-x thin films on Si with a CoSi2 buffer layer Applied Physics Letters. 58: 419-421. DOI: 10.1063/1.104655  0.68
1991 Schowalter LJ, Jimenez JR, Hsiung LM, Rajan K, Hashimoto S, Thompson RD, Iyer SS. Control of misoriented grains and pinholes in CoSi2 grown on Si(001) Journal of Crystal Growth. 111: 948-956. DOI: 10.1016/0022-0248(91)91113-O  0.68
1991 Ayers JE, Ghandhi SK, Schowalter LJ. Crystallographic tilting of heteroepitaxial layers Journal of Crystal Growth. 113: 430-440. DOI: 10.1016/0022-0248(91)90077-I  0.68
1990 Schowalter LJ, Hall EL, Lewis N, Shin Hashimoto. Strain relief of large lattice mismatch heteroepitaxial films on silicon by tilting Thin Solid Films. 184: 437-445. DOI: 10.1016/0040-6090(90)90442-G  0.68
1989 Zegenhagen J, Huang K, Gibson WM, Hunt BD, Schowalter LJ. Structural properties of epitaxial NiSi2 on Si(111) investigated with x-ray standing waves. Physical Review. B, Condensed Matter. 39: 10254-10260. PMID 9947807 DOI: 10.1103/PhysRevB.39.10254  0.68
1989 Schowalter LJ, Fathauer RW. Growth and characterization of single crystal insulators on silicon Critical Reviews in Solid State and Materials Sciences. 15: 367-421. DOI: 10.1080/10408438908243740  0.68
1989 Jimenez JR, Wu ZC, Schowalter LJ, Hunt BD, Fathauer RW, Grunthaner PJ, Lin TL. Optical properties of epitaxial CoSi2 and NiSi2 films on silicon Journal of Applied Physics. 66: 2738-2741. DOI: 10.1063/1.344217  0.68
1989 Abedin MN, Schowalter LJ, Das P. Transverse acoustoelectric voltage measurements of GaAs grown directly on (100) Si substrates Journal of Applied Physics. 66: 4218-4222. DOI: 10.1063/1.343961  0.68
1989 Lee EY, Schowalter LJ. Computation of quantum mechanical transmission probability from plane interfaces using electronic band structures Journal of Applied Physics. 65: 4903-4907. DOI: 10.1063/1.343206  0.68
1989 Hashimoto S, Gibson WM, Schowalter LJ, Lee EY, Claxton PA. Reduction of strain in GaAs grown on CaF2/Si heteroepitaxial substrates Journal of Crystal Growth. 95: 403-404. DOI: 10.1016/0022-0248(89)90429-6  0.68
1988 Tromp RM, LeGoues FK, Krakow W, Schowalter LJ. Structural characterization of the Si(111)-CaF2 interface by high-resolution transmission electron microscopy. Physical Review Letters. 61: 2274. PMID 10039034 DOI: 10.1103/PhysRevLett.61.2274  0.68
1987 Zegenhagen J, Huang KG, Hunt BD, Schowalter LJ. Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111) Applied Physics Letters. 51: 1176-1178. DOI: 10.1063/1.98724  0.68
1987 Fathauer RW, Schowalter LJ. MIS characterization and modeling of the electrical properties of the epitaxial Caf2/Si(111) interface Journal of Electronic Materials. 16: 169-175. DOI: 10.1007/BF02655482  0.68
1987 Zegenhagen J, Kayed MA, Huang KG, Gibson WM, Phillips JC, Schowalter LJ, Hunt BD. Determination of lattice mismatch in NiSi2 overlayers on Si(111) Applied Physics a Solids and Surfaces. 44: 365-369. DOI: 10.1007/BF00624605  0.68
1986 Schowalter LJ, Fathauer RW. Molecular beam epitaxy growth and applications of epitaxial fluoride films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1026-1032. DOI: 10.1116/1.573447  0.68
1986 Fathauer RW, Hunt BD, Schowalter LJ, Okamoto M, Hashimoto S. Heteroepitaxy of insulator/metal/silicon structures: CaF 2/NiSi2/Si(111) and CaF2/CoSi 2/Si(111) Applied Physics Letters. 49: 64-66. DOI: 10.1063/1.97353  0.68
1986 Fathauer RW, Lewis N, Hall EL, Schowalter LJ. Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111) Journal of Applied Physics. 60: 3886-3894. DOI: 10.1063/1.337561  0.68
1986 Hashimoto S, Wielunski LS, Peng JL, Gibson WM, Schowalter LJ. Linear energy dependence of the interface peak intensity Nuclear Inst. and Methods in Physics Research, B. 13: 65-67. DOI: 10.1016/0168-583X(86)90473-8  0.68
1986 Hashimoto S, Feng YQ, Gibson WM, Schowalter LJ, Hunt BD. Steering effect at a strained NiSi2/Si (001) interface Nuclear Inst. and Methods in Physics Research, B. 13: 45-50. DOI: 10.1016/0168-583X(86)90469-6  0.68
1986 Okamoto M, Hashimoto S, Hunt BD, Schowalter LJ, Gibson WM. STRAIN MEASUREMENT IN EPITAXIAL NiSi//2/Si(111) BY MeV ION CHANNELING Materials Research Society Symposia Proceedings. 56: 157-162.  0.68
1986 Hashimoto S, Schowalter LJ, Fathauer RW, Gibson WM. STRAIN AND REORDERING IN CaF//2/Si(111) EPITAXY Materials Research Society Symposia Proceedings. 56: 247-252.  0.68
1986 Hunt BD, Lewis N, Hall EL, Turner LG, Schowalter LJ, Okamoto M, Hashimoto S. GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi//2 AND Si/CoSi//2/Si HETEROSTRUCTURES Materials Research Society Symposia Proceedings. 56: 151-156.  0.68
1986 Schowalter LJ, Fathauer RW, Ponce FA, Anderson G, Hashimoto S. ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS IN EPITAXIAL CaF//2 ON Si Materials Research Society Symposia Proceedings. 67: 125-133.  0.68
1986 Hauenstein RJ, Schowalter LJ, Hunt BD, Marsh OJ, McGill TC. TUNNELING SPECTROSCOPY OF SINGLE-CRYSTAL CoSi//2 and NiSi//2 EPILAYERS ON n-TYPE Si Materials Research Society Symposia Proceedings. 67: 227-233.  0.68
1986 Chrenko RM, Schowalter LJ, Hall EL, Lewis N. DEFECTS IN MBE SILICON Materials Research Society Symposia Proceedings. 56: 27-32.  0.68
1985 Hashimoto S, Peng JL, Gibson WM, Schowalter LJ, Fathauer RW. Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling Applied Physics Letters. 47: 1071-1073. DOI: 10.1063/1.96383  0.68
1985 Hauenstein RJ, Schlesinger TE, McGill TC, Hunt BD, Schowalter LJ. Schottky barrier height measurements of epitaxial NiSi2 on Si Applied Physics Letters. 47: 853-855. DOI: 10.1063/1.96007  0.68
1985 Schowalter LJ, Fathauer RW, Goehner RP, Turner LG, Deblois RW, Hashimoto S, Peng JL, Gibson WM, Krusius JP. Epitaxial growth and characterization of CaF2 on Si Journal of Applied Physics. 58: 302-308. DOI: 10.1063/1.335676  0.68
1985 Fathauer RW, Schowalter LJ, Lewis N, Hall EL. EPITAXIAL GROWTH OF Si AND Ge ON HETEROEPITAXIAL CaF//2/Si STRUCTURES Proceedings - the Electrochemical Society. 85: 277-284.  0.68
1985 Hashimoto S, Peng JL, Schowalter LJ, Gibson WM. MEASUREMENT OF STRAIN IN EPITAXIAL CaF//2 ON (111) Si BY MeV ION CHANNELING Proceedings - the Electrochemical Society. 85: 304-310.  0.68
1985 Chrenko RM, Turner LG, Schowalter LJ. Ga DOPING OF Si MBE LAYERS USING A LIQUID METAL ION SOURCE Proceedings - the Electrochemical Society. 85: 179-183.  0.68
1985 Schowalter LJ, Fathauer RW, Krusius JP. ELECTRICAL CHARACTERIZATION OF EPITAXIAL CALCIUM FLUORIDE ON SILICON (111) Proceedings - the Electrochemical Society. 85: 311-315.  0.68
1985 Hashimoto S, Peng JL, Schowalter LJ, Gibson WM. STRAIN DETERMINATION IN MBE GROWN CaF//2 ON (111) Si BY Mev CHANNELING Electrochemical Society Extended Abstracts. 85: 202-203.  0.68
1985 Fathauer RW, Schowalter LJ, Lewis N, Hall EL. HETEROEPITAXY OF Si/CaF//2/Si STRUCTURES BY MBE Electrochemical Society Extended Abstracts. 85: 198-199.  0.68
1984 Schowalter LJ, Steranka FM, Salamon MB, Wolfe JP. Evidence for separate Mott and liquid-gas transitions in photoexcited, strained germanium Physical Review B. 29: 2970-2985. DOI: 10.1103/PhysRevB.29.2970  0.68
1984 Fathauer RW, Schowalter LJ. Surface morphology of epitaxial CaF2 films on Si substrates Applied Physics Letters. 45: 519-521. DOI: 10.1063/1.95299  0.68
1984 Schowalter LJ, Fathauer RW, DeBlois RW, Turner LG, Krusius JP. EPITAXIAL INSULATING FILMS OF CaF//2 ON Si Proceedings - the Electrochemical Society. 84: 448-454.  0.68
1982 Schowalter LJ, Steranka FM, Salamon MB, Wolfe JP. Separate Mott and liquid-gas transitions in a coulomb gas: Photoexcited germanium Solid State Communications. 44: 795-799. DOI: 10.1016/0038-1098(82)90276-9  0.68
1981 Schowalter LJ, Steranka FM, Salamon MB, Wolfe JP. Long lifetimes of excitons in stressed Ge Solid State Communications. 37: 319-324. DOI: 10.1016/0038-1098(81)90368-9  0.68
1979 Klein MW, Schowalter LJ, Shukla P. Spin glasses in the Bethe-Peierls-Weiss and other mean-field approximations Physical Review B. 19: 1492-1502. DOI: 10.1103/PhysRevB.19.1492  0.68
1979 Schowalter LJ, Klein MW. Analytical treatment of the hole in the internal field distribution for an infinite-range spin glass Journal of Physics C: Solid State Physics. 12: L935-L943. DOI: 10.1088/0022-3719/12/24/003  0.68
1979 Shukla P, Schowalter LJ, Klein MW. Random spin system in the Bethe-Peierls-Weiss approximation Journal of Applied Physics. 50: 1723-1725. DOI: 10.1063/1.327195  0.68
1977 Schowalter LJ, Salamon MB, Tsuei CC, Craven RA. The critical specific heat of a glassy ferromagnet Solid State Communications. 24: 525-529. DOI: 10.1016/0038-1098(77)90155-7  0.68
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