Venkatesh Narayanamurti, Ph.D - Publications

Affiliations: 
1960-1965 Physics Cornell University, Ithaca, NY, United States 
 1992-1998 Physics University of California, Santa Barbara, Santa Barbara, CA, United States 
 1998-2008 Applied Physics Harvard University, Cambridge, MA, United States 

199 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Anadon LD, Narayanamurti V, Bunn M. Transforming U.S. energy innovation: How do we get there? Transforming U.S. Energy Innovation. 216-231. DOI: 10.1017/CBO9781107338890.006  0.52
2014 Charles J, Anadon LD, Narayanamurti V. Encouraging private sector energy technology innovation and public–private cooperation Transforming U.S. Energy Innovation. 125-168. DOI: 10.1017/CBO9781107338890.004  1
2014 Logar N, Narayanamurti V, Anadon LD. Reforming U.S. energy innovation institutions: Maximizing the return on investment Transforming U.S. Energy Innovation. 81-124. DOI: 10.1017/CBO9781107338890.003  1
2014 Logar N, Anadon LD, Narayanamurti V. Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships Minerva. 52: 237-261. DOI: 10.1007/s11024-014-9253-2  0.52
2013 Altfeder I, Yi W, Narayanamurti V. Spin-polarized scanning tunneling microscopy of the room-temperature antiferromagnet c-FeSi Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/PhysRevB.87.020403  1
2013 Dao TD, Dang CTT, Han G, Hoang CV, Yi W, Narayanamurti V, Nagao T. Chemically synthesized nanowire TiO2/ZnO core-shell p-n junction array for high sensitivity ultraviolet photodetector Applied Physics Letters. 103. DOI: 10.1063/1.4826921  1
2013 Narayanamurti V, Odumosu T, Vinsel L. RIP: The basic/applied research dichotomy Issues in Science and Technology. 29: 31-36.  1
2012 Gurwitz R, Tavor A, Karpeles L, Shalish I, Yi W, Seryogin G, Narayanamurti V. Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure Applied Physics Letters. 100. DOI: 10.1063/1.4712562  1
2012 Odumosu T, Narayanamurti V, Peirce B. Toward a common wireless market Issues in Science and Technology. 28: 23-25.  1
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. High-current-density monolayer CdSe/ZnS quantum dot light-emitting devices with oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 23: 4521-5. PMID 21901762 DOI: 10.1002/adma.201101782  1
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. Scanning tunneling microscope investigation of local density of states in Al-doped ZnO thin films Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.075430  1
2011 Likovich EM, Jaramillo R, Russell KJ, Ramanathan S, Narayanamurti V. Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence Applied Physics Letters. 99. DOI: 10.1063/1.3647622  1
2010 Dickey MD, Russell KJ, Lipomi DJ, Narayanamurti V, Whitesides GM. Transistors formed from a single lithography step using information encoded in topography. Small (Weinheim An Der Bergstrasse, Germany). 6: 2050-7. PMID 20715073 DOI: 10.1002/smll.201000554  1
2010 Russell KJ, Capasso F, Narayanamurti V, Lu H, Zide JMO, Gossard AC. Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.115322  1
2010 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.235325  1
2010 Hummon MR, Stollenwerk AJ, Narayanamurti V, Anikeeva PO, Panzer MJ, Wood V, Bulovi? V. Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.115439  1
2010 Yi W, Kim T, Shalish I, Loncar M, Aziz MJ, Narayanamurti V. Room-temperature photoresponse of Schottky photodiodes based on GaN xAs1-x synthesized by ion implantation and pulsed-laser melting Applied Physics Letters. 97. DOI: 10.1063/1.3500981  1
2010 Ruzmetov D, Gopalakrishnan G, Ko C, Narayanamurti V, Ramanathan S. Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Journal of Applied Physics. 107. DOI: 10.1063/1.3408899  1
2009 Shalish I, Seryogin G, Yi W, Bao JM, Zimmler MA, Likovich E, Bell DC, Capasso F, Narayanamurti V. Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire. Nanoscale Research Letters. 4: 532-537. PMID 20596436 DOI: 10.1007/s11671-009-9276-z  1
2009 Petersen EW, Likovich EM, Russell KJ, Narayanamurti V. Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles. Nanotechnology. 20: 405603. PMID 19738315 DOI: 10.1088/0957-4484/20/40/405603  1
2009 Likovich EM, Russell KJ, Petersen EW, Narayanamurti V. Weak localization and mobility in ZnO nanostructures Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.245318  1
2009 Likovich E, Russell K, Yi W, Narayanamurti V, Ku KC, Zhu M, Samarth N. Magnetoresistance in an asymmetric Ga1-xMnxAs resonant tunneling diode Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.201307  1
2009 Mani RG, Johnson WB, Umansky V, Narayanamurti V, Ploog K. Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.205320  1
2009 Ruzmetov D, Heiman D, Claflin BB, Narayanamurti V, Ramanathan S. Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.153107  1
2009 Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S. Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions Journal of Applied Physics. 106. DOI: 10.1063/1.3245338  1
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  1
2009 Likovich EM, Russell KJ, Narayanamurti V, Lu H, Gossard AC. Direct injection tunnel spectroscopy of a p-n junction Applied Physics Letters. 95. DOI: 10.1063/1.3177191  1
2009 Yoon J, Girgis AM, Shalish I, Ram-Mohan LR, Narayanamurti V. Size-dependent impurity activation energy in GaN nanowires Applied Physics Letters. 94. DOI: 10.1063/1.3115769  1
2009 Chen DJ, Huang Y, Liu B, Xie ZL, Zhang R, Zheng YD, Wei Y, Narayanamurti V. High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices Journal of Applied Physics. 105. DOI: 10.1063/1.3099601  1
2009 Yi W, Stollenwerk AJ, Narayanamurti V. Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures Surface Science Reports. 64: 169-190. DOI: 10.1016/j.surfrep.2009.01.001  1
2009 Narayanamurti V, Anadon LD, Sagar AD. Transforming energy innovation Issues in Science and Technology. 26: 57-64.  1
2008 Ruzmetov D, Zawilski KT, Senanayake SD, Narayanamurti V, Ramanathan S. Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 465204. PMID 21693844 DOI: 10.1088/0953-8984/20/46/465204  1
2008 Zimmler MA, Stichtenoth D, Ronning C, Yi W, Narayanamurti V, Voss T, Capasso F. Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass. Nano Letters. 8: 1695-9. PMID 18462004 DOI: 10.1021/nl080627w  1
2008 Likovich E, Russell K, Yi W, Narayanamurti V, Ku KC, Zhu M, Samarth N. Observation of magnetoresistance polarity reversal in 3D to 2D tunneling in an asymmetric GaMnAs resonant tunneling diode Device Research Conference - Conference Digest, Drc. 167-168. DOI: 10.1109/DRC.2008.4800787  1
2008 Ruzmetov D, Senanayake SD, Narayanamurti V, Ramanathan S. Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/PhysRevB.77.195442  1
2008 Kim T, Alberi K, Dubon OD, Aziz MJ, Narayanamurti V. Composition dependence of Schottky barrier heights and bandgap energies of GaNx As1-x synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 104. DOI: 10.1063/1.3041154  1
2008 Kim T, Aziz MJ, Narayanamurti V. Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting Applied Physics Letters. 93. DOI: 10.1063/1.2982424  1
2008 Chen DJ, Liu B, Chen GQ, Xu F, Xie ZL, Han P, Zhang R, Zheng YD, Narayanamurti V. The effect of long-duration higherature annealing in an air ambient on the properties of AlGaNGaN heterostructures Journal of Applied Physics. 103. DOI: 10.1063/1.2888563  0.52
2007 Zimmler MA, Bao J, Shalish I, Yi W, Narayanamurti V, Capasso F. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection. Nanotechnology. 18: 395201. PMID 21730412 DOI: 10.1088/0957-4484/18/39/395201  1
2007 Yi W, Narayanamurti V, Zide JMO, Bank SR, Gossard AC. Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/PhysRevB.75.115333  1
2007 Zimmler MA, Bao J, Shalish I, Yi W, Yoon J, Narayanamurti V, Capasso F. Electroluminescence from single nanowires by tunnel injection: An experimental study Nanotechnology. 18. DOI: 10.1088/0957-4484/18/23/235205  1
2007 Ruzmetov D, Zawilski KT, Narayanamurti V, Ramanathan S. Structure-functional property relationships in rf-sputtered vanadium dioxide thin films Journal of Applied Physics. 102. DOI: 10.1063/1.2817818  1
2006 Russell KJ, Narayanamurti V, Appelbaum I, Hanson MP, Gossard AC. Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/PhysRevB.74.205330  0.52
2006 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Schalek R, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations Journal of Applied Physics. 100. DOI: 10.1063/1.2208738  1
2006 Olson MR, Russell KJ, Narayanamurti V, Olson JM, Appelbaum I. Linear photon upconversion of 400 meV in an AlGaInPGaInP quantum well heterostructure to visible light at room temperature Applied Physics Letters. 88. DOI: 10.1063/1.2195094  0.52
2006 Chandrasekhar N, Boothroyd C, Narayanamurti V, Parkin SSP, Scott JC. Applied Surface Science: Preface Applied Surface Science. 252: 3921. DOI: 10.1016/j.apsusc.2005.09.022  1
2006 Narayanamurti V. Frontiers in nanoscience and technology in the 21st century and new models for research and education at the intersection of basic research and technology Proceedings of the 4th International Conference On Nanochannels, Microchannels and Minichannels, Icnmm2006. 2006: 1203-1204.  1
2006 Mani RG, Ramanathan S, Narayanamurti V. Electrical study of device arrays on thin film vanadium dioxide Materials Research Society Symposium Proceedings. 966: 192-197.  0.52
2006 Narayanamurti V, Stone H, Dahleh M, Sagar A. The educated engineer [14] Issues in Science and Technology. 23: 19-20.  0.52
2006 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk JH, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, ... ... Narayanamurti V, et al. Solid-state and vacuum thermionic energy conversion Materials Research Society Symposium Proceedings. 886: 245-260.  1
2005 Seryogin G, Shalish I, Moberlychan W, Narayanamurti V. Catalytic hydride vapour phase epitaxy growth of GaN nanowires. Nanotechnology. 16: 2342-5. PMID 20818016 DOI: 10.1088/0957-4484/16/10/058  1
2005 Valenzuela SO, Monsma DJ, Marcus CM, Narayanamurti V, Tinkham M. Spin polarized tunneling at finite bias. Physical Review Letters. 94: 196601. PMID 16090193 DOI: 10.1103/PhysRevLett.94.196601  0.52
2005 Russell KJ, Appelbaum I, Narayanamurti V, Hanson MP, Gossard AC. Transverse momentum nonconservation at the ErAs/GaAs interface Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.121311  0.52
2005 Appelbaum I, Narayanamurti V. Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.045320  0.52
2005 Yi W, Kaya II, Altfeder IB, Appelbaum I, Chen DM, Narayanamurti V. Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces Review of Scientific Instruments. 76. DOI: 10.1063/1.1938969  0.52
2005 Appelbaum I, Yi W, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence microscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861961  1
2004 Altfeder IB, Liang X, Yamada T, Chen DM, Narayanamurti V. Anisotropic metal-insulator transition in epitaxial thin films. Physical Review Letters. 92: 226404. PMID 15245244 DOI: 10.1103/PhysRevLett.92.226404  1
2004 Mani RG, Smet JH, von Klitzing K, Narayanamurti V, Johnson WB, Umansky V. Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices. Physical Review Letters. 92: 146801. PMID 15089564 DOI: 10.1103/PhysRevLett.92.146801  1
2004 Mani RG, Narayanamurti V, Von Klitzing K, Smet JH, Johnson WB, Umansky V. Radiation-induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima Physical Review B - Condensed Matter and Materials Physics. 70: 155310-1-155310-5. DOI: 10.1103/PhysRevB.70.155310  0.52
2004 Shalish I, Temkin H, Narayanamurti V. Size-dependent surface luminescence in ZnO nanowires Physical Review B - Condensed Matter and Materials Physics. 69: 245401-1-245401-4. DOI: 10.1103/PhysRevB.69.245401  1
2004 Mani RG, Smet JH, Von Klitzing K, Narayanamurti V, Johnson WB, Umansky V. Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa 1-xAs devices Physical Review B - Condensed Matter and Materials Physics. 69: 193304-1-193304-4. DOI: 10.1103/PhysRevB.69.193304  1
2004 Appelbaum I, Wang T, Joannopoulos JD, Narayanamurti V. Ballistic hot-electron transport in nanoscale semiconductor heterostructures: Exact self-energy of a three-dimensional periodic tight-binding Hamiltonian Physical Review B - Condensed Matter and Materials Physics. 69: 165301-1-165301-6. DOI: 10.1103/PhysRevB.69.165301  1
2004 Mani RG, Narayanamurti V, Von Klitzing K, Smet JH, Johnson WB, Umansky V. Radiation-induced oscillatory Hall effect in high-mobility GaAs/Al xGa1-xAs devices Physical Review B - Condensed Matter and Materials Physics. 69: 161306-1-161306-4. DOI: 10.1103/PhysRevB.69.161306  1
2004 Russell KJ, Appelbaum I, Yi W, Monsma DJ, Capasso F, Marcus CM, Narayanamurti V, Hanson MP, Gossard AC. Avalanche spin-valve transistor Applied Physics Letters. 85: 4502-4504. DOI: 10.1063/1.1818339  0.52
2004 Appelbaum I, Russell KJ, Shalish I, Narayanamurti V, Hanson MP, Gossard AC. Ballistic hole emission luminescence Applied Physics Letters. 85: 2265-2267. DOI: 10.1063/1.1793347  1
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure Applied Physics Letters. 85: 1990-1992. DOI: 10.1063/1.1790595  1
2004 Yi W, MoberlyChan W, Narayanamurti V, Hu YF, Li Q, Kaya I, Burns M, Chen DM. Characterization of spinel iron-oxide nanocrystals grown on Fe whiskers Journal of Applied Physics. 95: 7136-7138. DOI: 10.1063/1.1676031  1
2004 Appelbaum I, Russell KJ, Kozhevnikov M, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope Applied Physics Letters. 84: 547-549. DOI: 10.1063/1.1644329  1
2004 Wei Y, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence of InAs quantum dots embedded in a GaAs/AlxGa1-xAs heterostructure Materials Research Society Symposium Proceedings. 838: 170-175. DOI: 10.1063/1.1584524  1
2003 Mani RG, Johnson WB, Narayanamurti V. Nuclear spin based quantum information processing at high magnetic fields Nanotechnology. 14: 515-522. DOI: 10.1088/0957-4484/14/5/307  1
2003 Appelbaum I, Russell KJ, Monsma DJ, Narayanamurti V, Marcus CM, Hanson MP, Gossard AC. Luminescent spin-valve transistor Applied Physics Letters. 83: 4571-4573. DOI: 10.1063/1.1630838  1
2003 Peng HB, Ristroph TG, Schurmann GM, King GM, Yoon J, Narayanamurti V, Golovchenko JA. Patterned growth of single-walled carbon nanotube arrays from a vapor-deposited Fe catalyst Applied Physics Letters. 83: 4238-4240. DOI: 10.1063/1.1627935  1
2003 Appelbaum I, Monsma DJ, Russell KJ, Narayanamurti V, Marcus CM. Spin-valve photodiode Applied Physics Letters. 83: 3737-3739. DOI: 10.1063/1.1623315  1
2003 Russella KJ, Appelbaum I, Temkin H, Perry CH, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters. 82: 2960-2962. DOI: 10.1063/1.1571981  1
2003 Appelbaum I, Sheth R, Shalish I, Russell KJ, Narayanamurti V. Experimental test of the planar tunneling model for ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 67: 1553071-1553074.  1
2002 Appelbaum I, Joannopoulos JD, Narayanamurti V. Alternative paradigm for physical computing. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 66: 066612. PMID 12513434 DOI: 10.1103/PhysRevE.66.066612  0.52
2002 Mani RG, Smet JH, von Klitzing K, Narayanamurti V, Johnson WB, Umansky V. Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures. Nature. 420: 646-50. PMID 12478287 DOI: 10.1038/nature01277  1
2002 Altfeder IB, Narayanamurti V, Chen DM. Imaging subsurface reflection phase with quantized electrons. Physical Review Letters. 88: 206801. PMID 12005588  0.32
2002 Martínez RE, Appelbaum I, Reddy CV, Sheth R, Russell KJ, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Electron transport through strongly coupled AlInP/GaInP superlattices Applied Physics Letters. 81: 3576-3578. DOI: 10.1063/1.1519350  1
2002 Reddy CV, Narayanamurti V, Ryou JH, Dupuis RD. Current transport in InP/In0.5(Al0.6Ga 0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy Applied Physics Letters. 80: 1770-1772. DOI: 10.1063/1.1458689  1
2002 Ryou JH, Dupuis RD, Walter G, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition Journal of Applied Physics. 91: 5313-5320. DOI: 10.1063/1.1454205  1
2002 Mani RG, Johnson WB, Narayanamurti V, Privman V, Zhang YH. Nuclear spin based memory and logic in quantum Hall semiconductor nanostructures for quantum computing applications Physica E: Low-Dimensional Systems and Nanostructures. 12: 152-156. DOI: 10.1016/S1386-9477(01)00290-9  0.52
2002 Mani RG, Johnson WB, Narayanamurti V. Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing Superlattices and Microstructures. 32: 261-273. DOI: 10.1016/S0749-6036(03)00027-2  0.52
2002 Reddy CV, Martinez RE, Narayanamurti V, Xin HP, Tu CW. Evolution of the GaNxP1-x alloy band structure: A ballistic electron emission spectroscopic investigation Physical Review B - Condensed Matter and Materials Physics. 66: 2353131-2353134.  1
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154.  1
2002 Shalish I, Altfeder IB, Narayanamurti V. Observations of conduction-band structure of 4H- and 6H-SiC Physical Review B - Condensed Matter and Materials Physics. 65: 0731041-0731044.  1
2002 Dupuis RD, Heller RD, Ryou JH, Walter G, Holonyak N, Reddy C, Narayanamurti V, Mathes D, Hull R. Low-threshold lasers based upon InP self-assembled quantum dots embedded in InAlGaP grown by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 721.  1
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154.  1
2001 Altfeder IB, Golovchenko JA, Narayanamurti V. Confinement-enhanced electron transport across a metal-semiconductor interface. Physical Review Letters. 87: 056801. PMID 11497796  0.52
2001 Appelbaum I, Wang T, Fan S, Joannopoulos JD, Narayanamurti V. Can silicon dimers form logic gates? Nanotechnology. 12: 391-393. DOI: 10.1088/0957-4484/12/3/330  0.52
2001 Ryou JH, Dupuis RD, Walter G, Kellogg DA, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 4091-4093. DOI: 10.1063/1.1382622  1
2001 Ryou JH, Dupuis RD, Mathes DT, Hull R, Reddy CV, Narayanamurti V. High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 3526-3528. DOI: 10.1063/1.1376665  1
2001 Reddy CV, Narayanamurti V. Characterization of nanopipes/dislocations in silicon carbide using ballistic electron emission microscopy Journal of Applied Physics. 89: 5797-5799. DOI: 10.1063/1.1365938  1
2001 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupui RD. Observation of resonant tunneling through InP quantum dots using ballistic electron emission microscopy Materials Research Society Symposium - Proceedings. 642: J7.2.1-J7.2.6.  1
2001 Narayanamurti V, Kozhevnikov M. BEEM imaging and spectroscopy of buried structures in semiconductors Physics Report. 349: 447-514.  0.52
2001 Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R, Mintairov A, Merz JL. Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates Journal of Electronic Materials. 30: 471-476.  0.52
2001 Ryou JH, Dupuis RD, Mathes DT, Hull R, Reddy CV, Narayanamurti V, Kellogg DA, Walter G, Holonyak N. J. InP self-assembled quantum dots embedded in In0.5Al0.3Ga0.2P grown on GaAs substrates by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 362-365.  1
2000 Ryou JH, Chowdhuiy U, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R. Self-assembled iii-phospide quantum dots grown by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 583: 39-44.  1
2000 Kozhevnikov M, Narayanamurti V, Reddy CV, Xin HP, Tu CW, Mascarenhas A, Zhang Y. Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 61: R7861-R7864.  0.52
2000 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure Applied Physics Letters. 77: 1167-1169.  1
2000 Smith DL, Kozhevnikov M, Lee EY, Narayanamurti V. Scattering theory of ballistic-electron-emission microscopy at nonepitaxial interfaces Physical Review B - Condensed Matter and Materials Physics. 61: 13914-13922.  0.52
2000 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Imaging and local current transport measurements of AlInP quantum dots grown on GaP Applied Physics Letters. 76: 1437-1439.  1
2000 Kozhevnikov M, Narayanamurti V, Smith DL, Chiu YJ. Second derivative ballistic electron emission spectroscopy in Au/(AlGa)As Materials Research Society Symposium - Proceedings. 584: 207-212.  1
2000 Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 223-226.  1
1999 Bhargava S, Blank HR, Hall E, Chin MA, Kroemer H, Narayanamurti V. Staggered to straddling band lineups in InAs/Al(As, Sb) Applied Physics Letters. 74: 1135-1137. DOI: 10.1063/1.123466  0.52
1999 Kozhevnikov M, Narayanamurti V, Mascarenhas A, Zhang Y, Olson JM, Smith DL. Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy Applied Physics Letters. 75: 1128-1130.  1
1999 Kozhevnikov M, Narayanamurti V, Zheng C, Chiu YJ, Smith DL. Effect of electron scattering on second derivative ballistic electron emission spectroscopy in Au/GaAs/AlGaAs heterostructures Physical Review Letters. 82: 3677-3680.  0.52
1999 Braze EG, Chin MA, Narayanamurti V. Direct observation of localized high current densities in GaN films Applied Physics Letters. 74: 2367-2369.  1
1998 Narayanamurti V. Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots Proceedings of Spie - the International Society For Optical Engineering. 3287: 152-166. DOI: 10.1117/12.304476  1
1998 Bhargava S, Zheng C, Ko J, Chin MA, Coldren LA, Narayanamurti V. Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy Applied Physics Letters. 73: 3271-3272. DOI: 10.1063/1.122741  0.52
1998 Hansen PJ, Strausser YE, Erickson AN, Tarsa EJ, Kozodoy P, Brazel EG, Ibbetson JP, Mishra U, Narayanamurti V, DenBaars SP, Speck JS. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 72: 2247-2249. DOI: 10.1063/1.121268  0.52
1998 Smith L, Lee EY, Narayanamurti V. Llistic electron emission microscopy for nonepitaxial metal/semiconductor interfaces Physical Review Letters. 80: 2433-2436.  1
1998 Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs Physica E: Low-Dimensional Systems and Nanostructures. 2: 682-684.  1
1998 Blank HR, Mathis S, Hall E, Bhargava S, Behres A, Heuken M, Kroemer H, Narayanamurti V. Al(As,Sb) heterobarriers on InAs: Growth, structural properties and electrical transport Journal of Crystal Growth. 187: 18-28.  1
1998 Bell LD, Narayanamurti V. Ballistic-electron-emission microscopy of semiconductor heterostructures Current Opinion in Solid State and Materials Science. 3: 38-44.  1
1998 Shakouri A, Lee EY, Smith DL, Narayanamurti V, Bowers JE. Thermoelectric effects in submicron heterostructure barriers Microscale Thermophysical Engineering. 2: 37-47.  1
1997 Lee EY, Bhargava S, Chin MA, Narayanamurti V. Atomic and mesoscopic scale characterization of semiconductor interfaces by ballistic electron emission microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 1351-1357. DOI: 10.1116/1.580588  1
1997 O'Shea JJ, Brazel EG, Rubin ME, Bhargava S, Chin MA, Narayanamurti V. Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects Physical Review B - Condensed Matter and Materials Physics. 56: 2026-2035.  1
1997 Lee EY, Narayanamurti V, Smith DL. Monte Carlo simulations of ballistic-electron-emission-microscopy imaging and spectroscopy of buried mesoscopic structures Physical Review B - Condensed Matter and Materials Physics. 55: R16033-R16036.  1
1997 Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Local conduction band offset of GaSb self-assembled quantum dots on GaAs Applied Physics Letters. 70: 1590-1592.  1
1997 Narayanamurti V. Ballistic Electron Emission Microscopy (BEEM) and spectroscopy of buried semiconductor heterostructures and quantum dots Science Reports of the Rerearch Institutes Tohoku University Series a-Physics. 44: 165-172.  1
1997 Bhargava S, Blank HR, Narayanamurti V, Kroemer H. Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy Applied Physics Letters. 70: 759-761.  1
1997 Brazel EG, Chin MA, Narayanamurti V, Kapolnek D, Tarsa EJ, DenBaars SP. Ballistic electron emission microscopy study of transport in GaN thin films Applied Physics Letters. 70: 330-332.  1
1996 Rubin ME, Medeiros-Ribeiro G, O'Shea JJ, Chin MA, Lee EY, Petroff PM, Narayanamurti V. Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy. Physical Review Letters. 77: 5268-5271. PMID 10062758  1
1996 O'Shea JJ, Reaves CM, DenBaars SP, Chin MA, Narayanamurti V. Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy Applied Physics Letters. 69: 3022-3024.  1
1996 Lee EY, Bhargava S, Chin MA, Narayanamurti V, Pond KJ, Luo K. Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy Applied Physics Letters. 69: 940-942.  1
1996 O'Shea JJ, Reaves CM, Chin MA, Denbaars SP, Gossard AC, Narayanamurti V, Jones ED. Ballistic-electron-emission microscopy (BEEM) studies-of GaInP/GaAs heterostructures Materials Research Society Symposium - Proceedings. 417: 79-83.  1
1995 Sajoto T, O'Shea JJ, Bhargava S, Leonard D, Chin MA, Narayanamurti V. Direct Observation of Quasi-Bound States and Band-Structure Effects in a Double Barrier Resonant Tunneling Structure Using Ballistic Electron Emission Microscopy. Physical Review Letters. 74: 3427-3430. PMID 10058198 DOI: 10.1103/PhysRevLett.74.3427  0.52
1993 Yi W, Kim T, Shalish I, Loncar M, Aziz MJ, Narayanamurti V. Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting Ieee Transactions On Information Theory. 39: 946-956. DOI: 10.1109/18.256501  1
1988 Eisenstein JP, Gossard AC, Narayanamurti V. Thermal conductance magneto-oscillations and electron-phonon coupling in GaAs/AlGaAs heterostructures Surface Science. 196: 445-450. DOI: 10.1016/0039-6028(88)90724-8  1
1987 Narayanamurti V. Artificially structured thin-film materials and interfaces. Science (New York, N.Y.). 235: 1023-8. PMID 17782249 DOI: 10.1126/science.235.4792.1023  1
1987 Eisenstein JP, Gossard AC, Narayanamurti V. Quantum oscillations in the thermal conductance of GaAs/AlGaAs heterostructures. Physical Review Letters. 59: 1341-1344. PMID 10035207 DOI: 10.1103/PhysRevLett.59.1341  1
1987 Levinson HJ, Narayanamurti V. Role of physics in industry Physics Today. 40: 114. DOI: 10.1063/1.2820204  0.52
1987 Narayanamurti V. NOVEL HETEROJUNCTION DEVICES Technical Digest - International Electron Devices Meeting. 60-61.  1
1986 Eisenstein JP, Narayanamurti V. Observation of one-dimensional second sound in superfluid helium. Physical Review Letters. 57: 839-842. PMID 10034174 DOI: 10.1103/PhysRevLett.57.839  1
1986 Narayanamurti V. The US Needs a Coherent Industrial Policy Physics Today. 39: 94. DOI: 10.1063/1.2815133  0.52
1986 Eisenstein JP, Störmer HL, Narayanamurti V, Cho AY, Gossard AC. Magnetization and density of states of the 2D electron gas in GaAs/AlGaAs heterostructures Surface Science. 170: 271-276. DOI: 10.1016/0039-6028(86)90974-X  1
1985 Eisenstein JP, Stormer HL, Narayanamurti V, Cho AY, Gossard AC, Tu CW. Density of states and de Haas-van Alphen effect in two-dimensional electron systems. Physical Review Letters. 55: 875-878. PMID 10032470  0.52
1985 Eisenstein JP, Stormer HL, Narayanamurti V, Cho AY, Gossard AC, Tu CW. Density of States and de Haasvan Alphen Effect in Two-Dimensional Electron Systems Physical Review Letters. 55: 875-878. DOI: 10.1103/PhysRevLett.55.875  1
1985 Eisenstein JP, Stoermer HL, Narayanamurti V, Gossard AC. HIGH PRECISION DE HAAS-VAN ALPHEN MEASUREMENTS ON A TWO-DIMENSIONAL ELECTRON GAS . 309-312. DOI: 10.1016/0749-6036(85)90020-5  1
1985 Chin MA, Narayanamurti V, Stormer HL, Gossard AC. PHONON EMISSION AND CARRIER HEATING IN A TWO-DIMENSIONAL HOLE GAS . 333-336.  1
1985 Eisenstein JP, Stoermer HL, Narayanamurti V, Gossard AC. HIGH PRECISION DE HAAS-VAN ALPHEN MEASUREMENTS ON A TWO-DIMENSIONAL ELECTRON GAS . 309-312.  1
1984 Eisenstein JP, Störmer HL, Narayanamurti V, Gossard AC, Wiegmann W. Effect of inversion symmetry on the band structure of semiconductor heterostructures Physical Review Letters. 53: 2579-2582. DOI: 10.1103/PhysRevLett.53.2579  1
1984 Narayanamurti V. Crystalline semiconductor heterostructures Physics Today. 37: 24-32. DOI: 10.1063/1.2915912  1
1984 Haavasoja T, Störmer HL, Bishop DJ, Narayanamurti V, Gossard AC, Wiegmann W. Magnetization measurements on a two-dimensional electron system Surface Science. 142: 294-297. DOI: 10.1016/0039-6028(84)90325-X  1
1984 Rutledge JE, Dynes RC, Narayanamurti V. Superconducting tunneling in a pair-breaking microwave field Journal of Low Temperature Physics. 54: 547-554. DOI: 10.1007/BF00683618  1
1984 Haavasoja T, Narayanamurti V, Chin MA. Comment on anomalous dispersion and scattering rates for multiphonon spontaneous decay in He II Journal of Low Temperature Physics. 57: 55-59. DOI: 10.1007/BF00681516  1
1984 Narayanamurti V. ACOUSTIC PROPERTIES OF SEMICONDUCTOR SUPERLATTICES AND INTERFACES Journal De Physique (Paris), Colloque. 45: 157.  1
1983 Haavasoja T, Narayanamurti V, Chin MA, Bhatt RN. Observation of a high-frequency cutoff for phonon propagation in liquid He4 Physical Review Letters. 51: 2406-2409. DOI: 10.1103/PhysRevLett.51.2406  1
1983 Haavasoja T, Narayanamurti V, Chin MA. Propagation of near-zone-boundary, acoustic phonons in solid He4 with the use of superconducting tunnel junctions Physical Review B. 27: 2767-2769. DOI: 10.1103/PhysRevB.27.2767  1
1982 Stoermer HL, Haavasoja T, Narayanamurti V, Gossard AC, Wiegmann W. OBSERVATION OF THE DEHAAS-VAN ALPHEN EFFECT IN A TWO-DIMENSIONAL ELECTRON SYSTEM Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 423-426. DOI: 10.1116/1.582618  1
1982 McWhan DB, Hu P, Chin MA, Narayanamurti V. Observation of optically excited near-zone-edge phonons in GaAs by diffuse x-ray scattering Physical Review B. 26: 4774-4776. DOI: 10.1103/PhysRevB.26.4774  1
1982 Loponen MT, Dynes RC, Narayanamurti V, Garno JP. Thermal relaxation in a-As2S3 and a-As Physical Review B. 25: 4310-4312. DOI: 10.1103/PhysRevB.25.4310  1
1982 Loponen MT, Dynes RC, Narayanamurti V, Garno JP. Measurements of the time-dependent specific heat of amorphous materials Physical Review B. 25: 1161-1173. DOI: 10.1103/PhysRevB.25.1161  1
1982 Loponen MT, Dynes RC, Narayanamurti V, Garno JP. The time dependent specific heat of dielectric glasses Physica B+C. 109: 1873-1879. DOI: 10.1016/0378-4363(82)90211-X  1
1981 Hu P, Narayanamurti V, Chin MA. Observation of velocity bunching of near-zone-edge phonons in semiconductors: An intense, tunable phonon source near 10 A Physical Review Letters. 46: 192-195. DOI: 10.1103/PhysRevLett.46.192  1
1981 Lax M, Narayanamurti V. Phonon optics in semiconductors: Phonon generation and electron-phonon scattering in n-GaAs epilayers: I. Theory Physical Review B. 24: 4692-4713. DOI: 10.1103/PhysRevB.24.4692  1
1981 Lax M, Hu P, Narayanamurti V. Spontaneous phonon decay selection rule: N and U processes Physical Review B. 23: 3095-3097. DOI: 10.1103/PhysRevB.23.3095  1
1981 Narayanamurti V. Phonon optics and phonon propagation in semiconductors Science. 213: 717-723.  1
1980 Loponen MT, Dynes RC, Narayanamurti V, Garno JP. Observation of time-dependent specific heat in amorphous SiO2 Physical Review Letters. 45: 457-460. DOI: 10.1103/PhysRevLett.45.457  1
1980 Ulbrich RG, Narayanamurti V, Chin MA. Propagation of large-wave-vector acoustic phonons in semiconductors Physical Review Letters. 45: 1432-1435. DOI: 10.1103/PhysRevLett.45.1432  1
1980 Lax M, Narayanamurti V. Phonon magnification and the Gaussian curvature of the slowness surface in anisotropic media: Detector shape effects with application to GaAs Physical Review B. 22: 4876-4897. DOI: 10.1103/PhysRevB.22.4876  1
1980 Geschwind S, Walsted1 RE, Romestain R, Narayanamurti V, Kummer RB, Feigenblatt R, Devlin G. The study of electron dynamics in w-type cds by spin-flip raman scattering Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 42: 961-977. DOI: 10.1080/01418638008222340  1
1979 Cardillo MJ, Becker GE, Kubiak GD, Narayanamurti V, Chin MA. GRANULAR ALUMINUM SUPERCONDUCTING BOLOMETER AS A MOLECULAR BEAM DETECTOR. Journal of Vacuum Science & Technology. 17: 130-133. DOI: 10.1116/1.570453  1
1979 Narayanamurti V, Störmer HL, Chin MA, Gossard AC, Wiegmann W. Selective transmission of high-frequency phonons by a superlattice: The "dielectric" phonon filter Physical Review Letters. 43: 2012-2016. DOI: 10.1103/PhysRevLett.43.2012  1
1979 Narayanamurti V, Logan RA, Chin MA. Symmetry of Donor-Related Centers Responsible for Persistent Photoconductivity in AlxGa1-xAs Physical Review Letters. 43: 1536-1539. DOI: 10.1103/PhysRevLett.43.1536  1
1979 Walstedt RE, Kummer RB, Geschwind S, Narayanamurti V, Devlin GE. Magnetic properties of an amorphous antiferromagnet Journal of Applied Physics. 50: 1700-1705. DOI: 10.1063/1.327241  1
1979 Geschwind S, Walstedt RE, Romestain R, Narayanamurti V, Kummer RB, Devlin G. DOPED SEMICONDUCTOR AS A MODEL AMORPHOUS ANTIFERROMAGNET Journal De Physique. Colloque. 41: c5. 105-c5. 113.  1
1979 Narayanamurti V, Chin MA, Logan RA, Lax M. NON-EQUILIBRIUM ACOUSTIC PHONON GENERATION BY HOT ELECTRONS IN n-GaAs Inst Phys Conf Ser. 215-218.  1
1978 Dynes RC, Narayanamurti V, Garno JP. Direct measurement of quasiparticle-lifetime broadening in a strong-coupled superconductor Physical Review Letters. 41: 1509-1512. DOI: 10.1103/PhysRevLett.41.1509  1
1978 Narayanamurti V, Logan RA, Chin MA. Direct observation of phonons generated during nonradiative capture in GaAs p-n junctions Physical Review Letters. 40: 63-66. DOI: 10.1103/PhysRevLett.40.63  1
1978 Kummer RB, Dynes RC, Narayanamurti V. Fast-time heat capacity in amorphous SiO2 using heat-pulse propagation Physical Review Letters. 40: 1187-1190. DOI: 10.1103/PhysRevLett.40.1187  1
1978 Kummer RB, Walstedt RE, Geschwind S, Narayanamurti V, Devlin GE. Magnetic behavior of an S=12 amorphous antiferromagnet Physical Review Letters. 40: 1098-1101. DOI: 10.1103/PhysRevLett.40.1098  1
1978 Narayanamurti V, Dynes RC, Hu P, Smith H, Brinkman WF. Quasiparticle and phonon propagation in bulk, superconducting lead Physical Review B. 18: 6041-6052. DOI: 10.1103/PhysRevB.18.6041  1
1978 Narayanamurti V, Chin MA, Logan RA. Direct determination of symmetry of Cr ions in semi-insulating GaAs substrates through anisotropic ballistic-phonon propagation and attenuation Applied Physics Letters. 33: 481-483. DOI: 10.1063/1.90432  1
1978 Narayanamurti V, Logan RA, Chin MA, Lax M. Anisotropic phonon generation in GaAs epilayers and pn junctions Solid State Electronics. 21: 1295-1298. DOI: 10.1016/0038-1101(78)90196-X  1
1977 Dynes RC, Narayanamurti V, Garno JP. Observation of a new superconducting sate at high quasiparticle injection Physical Review Letters. 39: 229-232. DOI: 10.1103/PhysRevLett.39.229  1
1977 Hu P, Dynes RC, Narayanamurti V, Smith H, Brinkman WF. Quasiparticle propagation and recombination in bulk, superconducting Pb Physical Review Letters. 38: 361-364. DOI: 10.1103/PhysRevLett.38.361  1
1977 Kummer RB, Narayanamurti V, Dynes RC. Ballistic phonons and the transition to second sound in dilute mixtures of He3 in liquid He4 Physical Review B. 16: 1046-1056. DOI: 10.1103/PhysRevB.16.1046  1
1976 Jayaraman A, Narayanamurti V, Kasper HM, Chin MA, Maines RG. Pressure dependence of the energy gap in some I-III-VI2 compound semiconductors Physical Review B. 14: 3516-3519. DOI: 10.1103/PhysRevB.14.3516  1
1976 Narayanamurti V, Dynes RC. Roton propagation and phonon-roton scattering in He II Physical Review B. 13: 2898-2909. DOI: 10.1103/PhysRevB.13.2898  1
1975 Hu P, Narayanamurti V, Dynes RC. Observation and study of electromagnetic wave generation in metals using nanosecond pulses of laser light: Case of Alfvén waves in bismuth Physical Review Letters. 34: 1015-1018. DOI: 10.1103/PhysRevLett.34.1015  1
1975 Narayanamurti V, Dynes RC. Ballistic phonons and the transition to second sound in solid He3 and He4 Physical Review B. 12: 1731-1738. DOI: 10.1103/PhysRevB.12.1731  1
1975 Dynes RC, Narayanamurti V. Measurement of anomalous dispersion and the excitation spectrum of HeII Physical Review B. 12: 1720-1730. DOI: 10.1103/PhysRevB.12.1720  1
1975 Narayanamurti V, Dynes RC, Andres K. Propagation of sound and second sound using heat pulses Physical Review B. 11: 2500-2524. DOI: 10.1103/PhysRevB.11.2500  1
1975 Dynes RC, Narayanamurti V. PHONON PROPAGATION IN LIQUID **4He . 29-52.  1
1974 Dynes RC, Narayanamurti V. Evidence for upward or "anomalous" dispersion in the excitation spectrum of He II Physical Review Letters. 33: 1195-1197. DOI: 10.1103/PhysRevLett.33.1195  1
1974 Narayanamurti V, Jayaraman A, Bucher E. Optical absorption in ytterbium monochalcogenides under pressure Physical Review B. 9: 2521-2523. DOI: 10.1103/PhysRevB.9.2521  1
1974 Hu P, Dynes RC, Narayanamurti V. Dynamics of quasiparticles in superconductors Physical Review B. 10: 2786-2788. DOI: 10.1103/PhysRevB.10.2786  1
1973 Narayanamurti V, Andres K, Dynes RC. Dispersion and attenuation of superthermal "monochromatic" phonons in He II Physical Review Letters. 31: 687-690. DOI: 10.1103/PhysRevLett.31.687  1
1973 Dynes RC, Narayanamurti V, Andres K. Phonon and roton propagation in He II under pressure Physical Review Letters. 30: 1129-1132. DOI: 10.1103/PhysRevLett.30.1129  1
1973 Andres K, Dynes RC, Narayanamurti V. Velocity spectrum of atoms evaporating from a liquid He surface at low temperatures Physical Review A. 8: 2501-2506. DOI: 10.1103/PhysRevA.8.2501  1
1973 Dynes RC, Narayanamurti V. Quasiparticle relaxation and phonon emission in superconducting tunnel junctions Solid State Communications. 12: 341-344. DOI: 10.1016/0038-1098(73)90769-2  1
1972 Narayanamurti V, Dynes RC. Observation of second sound in bismuth Physical Review Letters. 28: 1461-1465. DOI: 10.1103/PhysRevLett.28.1461  1
1972 Kirk JL, Vedam K, Narayanamurti V, Jayaraman A, Bucher E. Direct optical observation of the semiconductor-to-metal transition in SmS under pressure Physical Review B. 6: 3023-3026. DOI: 10.1103/PhysRevB.6.3023  1
1972 Dynes RC, Narayanamurti V. Phonon fluorescence in superconductors and the propagation characteristics of high-frequency phonons in Ge: Sb and Al2O3: V3+ Physical Review B. 6: 143-171. DOI: 10.1103/PhysRevB.6.143  1
1971 Narayanamurti V, Dynes RC. Intense tunable phonon fluorescence in superconductors Physical Review Letters. 27: 410-413. DOI: 10.1103/PhysRevLett.27.410  1
1971 Dynes RC, Narayanamurti V, Chin M. Monochromatic phonon propagation in Ge:Sb using superconducting tunnel junctions Physical Review Letters. 26: 181-184. DOI: 10.1103/PhysRevLett.26.181  1
1971 Bucher E, Narayanamurti V, Jayaraman A. Magnetism, metal-insulator transition, and optical properties in Sm- and some other divalent rare-earth monochalcogenides Journal of Applied Physics. 42: 1741-1745. DOI: 10.1063/1.1660421  1
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