Year |
Citation |
Score |
2015 |
Qi D, Liu Z, Liu Y, Leow WR, Zhu B, Yang H, Yu J, Wang W, Wang H, Yin S, Chen X. Suspended Wavy Graphene Microribbons for Highly Stretchable Microsupercapacitors. Advanced Materials (Deerfield Beach, Fla.). PMID 26291187 DOI: 10.1002/Adma.201502549 |
0.306 |
|
2014 |
Xu P, Dong L, Neek-Amal M, Ackerman ML, Yu J, Barber SD, Schoelz JK, Qi D, Xu F, Thibado PM, Peeters FM. Self-organized platinum nanoparticles on freestanding graphene. Acs Nano. 8: 2697-703. PMID 24499285 DOI: 10.1021/Nn406394F |
0.756 |
|
2014 |
Neek-Amal M, Xu P, Qi D, Thibado PM, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Peeters FM. Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.064101 |
0.716 |
|
2014 |
Xu P, Qi D, Schoelz JK, Thompson J, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK, Neek-Amal M, Peeters FM. Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC Carbon. DOI: 10.1016/J.Carbon.2014.08.028 |
0.727 |
|
2013 |
Xu P, Ackerman ML, Barber SD, Schoelz JK, Qi D, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK. Graphene manipulation on 4H-SiC(0001) using scanning tunneling microscopy Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.035104 |
0.795 |
|
2013 |
Xu P, Barber SD, Kevin Schoelz J, Ackerman ML, Qi D, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Kurt Gaskill D. Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4803137 |
0.797 |
|
2012 |
Schoelz JK, Xu P, Barber SD, Qi D, Ackerman ML, Basnet G, Cook CT, Thibado PM. High-percentage success method for preparing and pre-evaluating tungsten tips for atomic-resolution scanning tunneling microscopy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 033201. DOI: 10.1116/1.3701977 |
0.745 |
|
2012 |
Xu P, Yang Y, Qi D, Barber SD, Schoelz JK, Ackerman ML, Bellaiche L, Thibado PM. Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.085428 |
0.783 |
|
2012 |
Xu P, Yang Y, Barber SD, Ackerman ML, Schoelz JK, Qi D, Kornev IA, Dong L, Bellaiche L, Barraza-Lopez S, Thibado PM. Atomic control of strain in freestanding graphene Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.121406 |
0.789 |
|
2012 |
Dong L, Hansen J, Xu P, Ackerman ML, Barber SD, Schoelz JK, Qi D, Thibado PM. Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO 2) nanoparticles Applied Physics Letters. 101. DOI: 10.1063/1.4745780 |
0.771 |
|
2012 |
Xu P, Yang Y, Qi D, Barber SD, Ackerman ML, Schoelz JK, Bothwell TB, Barraza-Lopez S, Bellaiche L, Thibado PM. A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy Applied Physics Letters. 100. DOI: 10.1063/1.4716475 |
0.773 |
|
2012 |
Xu P, Yang Y, Barber SD, Schoelz JK, Qi D, Ackerman ML, Bellaiche L, Thibado PM. New scanning tunneling microscopy technique enables systematic study of the unique electronic transition from graphite to graphene Carbon. 50: 4633-4639. DOI: 10.1016/J.Carbon.2012.05.050 |
0.776 |
|
2011 |
Xu P, Qi D, Barber SD, Cook CT, Ackerman ML, Thibado PM. Streamlined inexpensive integration of a growth facility and scanning tunneling microscope for in-situ characterization Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3607606 |
0.722 |
|
2011 |
Xu P, Qi D, Ackerman ML, Barber SD, Thibado PM. Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth Journal of Crystal Growth. 327: 42-45. DOI: 10.1016/J.Jcrysgro.2011.06.023 |
0.712 |
|
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