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Collin J. Delker, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kwon J, Delker CJ, Harris CT, Das SR, Janes DB. Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors Journal of Applied Physics. 128: 94501. DOI: 10.1063/5.0014759  0.649
2020 Kwon J, Delker CJ, Janes DB, Harris CT, Das SR. Molybdenum Contacts to MoS2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise Physica Status Solidi (a). 1900880. DOI: 10.1002/Pssa.201900880  0.638
2019 Delker CJ, Yoo J, Swartzentruber BS, Harris CT. Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors Ieee Electron Device Letters. 40: 686-689. DOI: 10.1109/Led.2019.2905527  0.468
2019 Kwon J, Park JH, Delker CJ, Harris CT, Swartzentruber B, Das SR, Janes DB. Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors Applied Physics Letters. 114: 113502. DOI: 10.1063/1.5063501  0.72
2017 Delker CJ, Yoo JY, Bussmann E, Swartzentruber BS, Harris CT. Dual-gate operation and carrier transport in SiGe p-n junction nanowires. Nanotechnology. 28: 46LT01. PMID 29063868 DOI: 10.1088/1361-6528/Aa9173  0.477
2017 Delker CJ, Yoo J, Bussmann E, Swartzentruber BS, Harris CT. Dual-Gate Operation and Carrier Transport in SiGe p-n Junction Nanowires. Nanotechnology. PMID 28981446 DOI: 10.1088/1361-6528/aa9173  0.392
2015 Das SR, Kwon J, Prakash A, Delker CJ, Das S, Janes DB. Low-frequency noise in MoSe2 field effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4913714  0.729
2014 Delker CJ, Zi Y, Yang C, Janes DB. Current and noise properties of InAs nanowire transistors with asymmetric contacts induced by gate overlap Ieee Transactions On Electron Devices. 61: 884-889. DOI: 10.1109/Ted.2013.2296298  0.742
2013 Delker CJ, Zi Y, Yang C, Janes DB. Low-frequency noise contributions from channel and contacts in InAs nanowire transistors Ieee Transactions On Electron Devices. 60: 2900-2905. DOI: 10.1109/Ted.2013.2274009  0.742
2013 Delker CJ, Zi Y, Yang C, Janes DB. Temperature dependence of current and low-frequency noise in InAs nanowire transistors Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2013.6633791  0.616
2012 Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors. Nano Letters. 12: 5331-6. PMID 22950905 DOI: 10.1021/Nl302684S  0.655
2012 Delker CJ, Kim S, Borg M, Wernersson LE, Janes DB. 1/f noise sources in dual-gated indium arsenide nanowire transistors Ieee Transactions On Electron Devices. 59: 1980-1987. DOI: 10.1109/Ted.2012.2194150  0.747
2012 Delker CJ, Zi Y, Yang C, Janes DB. Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistors Device Research Conference - Conference Digest, Drc. 189-190. DOI: 10.1109/DRC.2012.6257046  0.696
2011 Das SR, Delker CJ, Zakharov D, Chen YP, Sands TD, Janes DB. Room temperature device performance of electrodeposited InSb nanowire field effect transistors Applied Physics Letters. 98. DOI: 10.1063/1.3587638  0.651
2010 Kim S, Delker C, Chen P, Zhou C, Ju S, Janes DB. Oxygen plasma exposure effects on indium oxide nanowire transistors. Nanotechnology. 21: 145207. PMID 20234086 DOI: 10.1088/0957-4484/21/14/145207  0.677
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