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Ali Razavieh, Ph.D. - Publications

Affiliations: 
2014 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Razavieh A, Zeitzoff P, Nowak EJ. Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures Ieee Transactions On Nanotechnology. 18: 999-1004. DOI: 10.1109/Tnano.2019.2942456  0.38
2017 Gall O, Zhong X, Schulman D, Kang M, Razavieh A, Mayer T. Titanium Dioxide Nanowire Sensor Array Integration on CMOS Platform Using Deterministic Assembly. Nanotechnology. PMID 28525391 DOI: 10.1088/1361-6528/Aa7456  0.361
2017 Schulman DS, Arnold AJ, Razavieh A, Nasr J, Das S. The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs Ieee Nanotechnology Magazine. 11: 6-17. DOI: 10.1109/Mnano.2017.2679240  0.303
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  0.499
2013 Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078  0.552
2013 Razavieh A, Janes DB, Appenzeller J. Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit Ieee Transactions On Electron Devices. 60: 2071-2076. DOI: 10.1109/Ted.2013.2259238  0.525
2011 Razavieh A, Singh N, Paul A, Klimeck G, Janes D, Appenzeller J. A new method to achieve RF linearity in SOI nanowire MOSFETs Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940626  0.472
2010 Smith JT, Zhao Y, Razavieh A, Yang C, Appenzeller J. Ge/Si core/shell nanowire structures for tunneling devices Ecs Transactions. 33: 707-714. DOI: 10.1149/1.3487601  0.346
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