Year |
Citation |
Score |
2013 |
Ferreyr RA, Li X, Zhang F, Zhu C, Izyumskaya N, Kayis C, Avrutin V, ÖzgUr U, Morkoc H. Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2005165 |
0.398 |
|
2013 |
Zhu C, Zhang F, Ferreyra RA, Li X, Kayis C, Avrutin V, Özgur U, Morkoc H. Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: Role of surface effects Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2000558 |
0.428 |
|
2013 |
Liu H, Avrutin V, Zhu C, Özgür Ü, Yang J, Lu C, Morkoç H. Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique Journal of Applied Physics. 113: 044108. DOI: 10.1063/1.4789008 |
0.414 |
|
2012 |
Kayis C, Ferreyra RA, Zhu C, Wu M, Li X, Özgür U, Matulionis A, Morkoç H. Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: Hot-phonon effects Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.908501 |
0.424 |
|
2012 |
Zhu C, Wu M, Kayis C, Zhang F, Li X, Ferreyra R, Avrutin V, Özgur U, Morkoç H. Degradation mechanism of InAlN/GaN based HFETs under high electric field stress Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.903983 |
0.411 |
|
2012 |
Kayis C, Ferreyra RA, Zhu C, Avrutin V, Özgür U, Morkoç H. The effect of barrier strain on the reliability of In x Al 1-xN/AlN/GaN heterostructure field-effect transistors Physica Status Solidi - Rapid Research Letters. 6: 163-165. DOI: 10.1002/Pssr.201206024 |
0.428 |
|
2011 |
Liu H, Avrutin V, Zhu C, Leach JH, Rowe E, Zhou L, Smith D, Özgür U, Morkoç H. Three-step deposition method for improvement of the dielectric properties of BST thin films Materials Research Society Symposium Proceedings. 1397: 38-43. DOI: 10.1557/Opl.2012.451 |
0.548 |
|
2011 |
Zhu C, Kayis C, Wu M, Li X, Zhang F, Avrutin V, Özgür U, Morkoc H. Reduction of flicker noise in AlGaN/GaN-Based HFETs after high electric-field stress Ieee Electron Device Letters. 32: 1513-1515. DOI: 10.1109/Led.2011.2163921 |
0.411 |
|
Show low-probability matches. |