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Michael R. Melloch - Publications

Affiliations: 
Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Optics Physics
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244 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Zhitenev NB, Brodsky M, Ashoori RC, Melloch MR. New Class of Resonances at the Edge of the Two Dimensional Electron Gas. Physical Review Letters. 77: 1833-1836. PMID 10063183 DOI: 10.1103/Physrevlett.77.1833  0.346
2019 Brubaker RM, Wang QN, Nolte DD, Melloch MR. Nonlocal Photorefractive Screening from Hot Electron Velocity Saturation in Semiconductors. Physical Review Letters. 77: 4249-4252. PMID 10062486 DOI: 10.1103/Physrevlett.77.4249  0.317
2012 Wang QN, Nolte DD, Melloch MR. Spatial-harmonic gratings at high modulation depths in photorefractive quantum wells. Optics Letters. 16: 1944-6. PMID 19784189 DOI: 10.1364/Ol.16.001944  0.31
2012 Liu TM, Ngo AT, Hemingway B, Herbert S, Melloch M, Ulloa SE, Kogan A. Quantitative study of spin-flip cotunneling transport in a quantum dot Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.045430  0.322
2011 Liu T, Hemingway B, Kogan A, Herbert S, Melloch M. Magnetic splitting of the zero-bias peak in a quantum point contact with a tunable aspect ratio Physical Review B. 84: 75320. DOI: 10.1103/Physrevb.84.075320  0.389
2006 Altomare F, Chang AM, Melloch MR, Hong Y, Tu CW. Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires. Physical Review Letters. 97: 017001. PMID 16907397 DOI: 10.1103/Physrevlett.97.017001  0.323
2005 Giannetta RW, Olheiser TA, Hannan M, Adesida I, Melloch MR. Conductance quantization and zero bias peak in a gated quantum wire Physica E: Low-Dimensional Systems and Nanostructures. 27: 270-277. DOI: 10.1016/J.Physe.2004.12.001  0.387
2004 Chen JC, Chang AM, Melloch MR. Transition between quantum states in a parallel-coupled double quantum dot. Physical Review Letters. 92: 176801. PMID 15169177 DOI: 10.1103/Physrevlett.92.176801  0.319
2004 Ibáñez J, Tarhan E, Ramdas AK, Hernández S, Cuscó R, Artús L, Melloch MR, Hopkinson M. Direct observation of LO phonon-plasmon coupled modes in the infrared transmission spectra of n-GaAs and n-InxGa1-xAs epilayers Physical Review B. 69: 75314. DOI: 10.1103/Physrevb.69.075314  0.329
2003 Dunsby C, Gu Y, Nolte DD, Melloch MR, French PMW. Wide-field coherence gated imaging: Photorefractive holography and wide-field coherent heterodyne imaging Proceedings of Spie - the International Society For Optical Engineering. 4956: 26-33. DOI: 10.1117/12.478993  0.345
2003 Guan D, Ravaioli U, Giannetta RW, Hannan M, Adesida I, Melloch MR. Nonequilibrium Green's function method for a quantum Hall device in a magnetic field Physical Review B - Condensed Matter and Materials Physics. 67: 2053281-2053289. DOI: 10.1103/Physrevb.67.205328  0.335
2003 Ramos-Garcia R, Chiu-Zarate R, Nolte D, Melloch MR. Measurements of absorption coefficient and refractive index changes without the Kramers-Kronig relation in photorefractive quantum wells of GaAs Journal of Optics a: Pure and Applied Optics. 5. DOI: 10.1088/1464-4258/5/6/019  0.326
2003 Dunsby C, Mayorga-Cruz D, Munro I, Gu Y, French PMW, Nolte DD, Melloch MR. High-speed wide-field coherence-gated imaging via photorefractive holography with photorefractive multiple quantum well devices Journal of Optics a: Pure and Applied Optics. 5. DOI: 10.1088/1464-4258/5/6/009  0.334
2003 Dunsby C, Gu Y, Ansari Z, French PMW, Peng L, Yu P, Melloch MR, Nolte DD. High-speed depth-sectioned wide-field imaging using low-coherence photorefractive holographic microscopy Optics Communications. 219: 87-99. DOI: 10.1016/S0030-4018(03)01268-9  0.319
2003 Venugopal R, Wan J, Melloch M, Kim G, Zank G, Tsoi S, Ramdas A. Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition Journal of Electronic Materials. 32: 371-374. DOI: 10.1007/S11664-003-0160-9  0.585
2002 Yuan L, Cooper JA, Webb KJ, Melloch MR. Demonstration of IMPATT diode oscillators in 4H-SiC Materials Science Forum. 389: 1359-1362. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1359  0.558
2002 Wan J, Capano MA, Melloch MR, Cooper JA. N-channel 3C-SiC MOSFETs on silicon substrate Ieee Electron Device Letters. 23: 482-484. DOI: 10.1109/Led.2002.801259  0.569
2002 Singh R, Cooper JA, Melloch MR, Chow TP, Palmour JW. SiC power Schottky and PiN diodes Ieee Transactions On Electron Devices. 49: 665-672. DOI: 10.1109/16.992877  0.336
2002 Cooper JA, Melloch MR, Singh R, Agarwal A, Palmour JW. Status and prospects for SiC power MOSFETs Ieee Transactions On Electron Devices. 49: 658-664. DOI: 10.1109/16.992876  0.308
2002 Wan J, Capano MA, Melloch MR. Formation of low resistivity ohmic contacts to n-type 3C-SiC Solid-State Electronics. 46: 1227-1230. DOI: 10.1016/S0038-1101(02)00013-8  0.57
2001 Jeong H, Chang AM, Melloch MR. The Kondo effect in an artificial quantum dot molecule Science. 293: 2221-2223. PMID 11567130 DOI: 10.1126/Science.1063182  0.316
2001 Nolte DD, Cubel T, Pyrak-Nolte LJ, Melloch MR. Adaptive beam combining and interferometry with photorefractive quantum wells Journal of the Optical Society of America B: Optical Physics. 18: 195-205. DOI: 10.1364/Josab.18.000195  0.348
2001 Gu Y, Ansari Z, Parsons-Karavassilis D, French PMW, Nolte DD, Melloch MR. High-speed 3-D imaging using photorefractive holography Proceedings of Spie - the International Society For Optical Engineering. 4298: 171-179. DOI: 10.1117/12.424903  0.303
2001 Zhu R, Hargis MC, Woodall JM, Melloch MR. Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact Ieee Photonics Technology Letters. 13: 103-105. DOI: 10.1109/68.910502  0.316
2001 Yuan L, Cooper JA, Melloch MR, Webb KJ. Experimental demonstration of a silicon carbide IMPATT oscillator Ieee Electron Device Letters. 22: 266-268. DOI: 10.1109/55.924837  0.595
2001 Webb KJ, Cohen EB, Melloch MR. Fabrication and operation of a velocity modulation transistor Ieee Transactions On Electron Devices. 48: 2701-2709. DOI: 10.1109/16.974693  0.305
2001 Chirita M, Sooryakumar R, Venugopal R, Wan J, Melloch MR. Acoustic barriers and observation of guided elastic waves in GaN-AlN structures by Brillouin scattering Physical Review B. 63: 205302. DOI: 10.1103/Physrevb.63.205302  0.559
2001 Ueng HJ, Chen NP, Janes DB, Webb KJ, McInturff DT, Melloch MR. Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts Journal of Applied Physics. 90: 5637-5641. DOI: 10.1063/1.1410324  0.405
2001 Wan J, Venugopal R, Melloch MR, Liaw HM, Rummel WJ. Growth of crack-free hexagonal GaN films on Si(100) Applied Physics Letters. 79: 1459-1461. DOI: 10.1063/1.1400770  0.348
2001 Nolte DD, Balasubramanian S, Melloch MR. Nonlinear charge transport in photorefractive semiconductor quantum wells Optical Materials. 18: 199-203. DOI: 10.1016/S0925-3467(01)00167-7  0.31
2001 Liaw HM, Venugopal R, Wan J, Melloch MR. Epitaxial GaN films grown on Si(1 1 1) with varied buffer layers Solid-State Electronics. 45: 1173-1177. DOI: 10.1016/S0038-1101(01)00048-X  0.562
2001 Liaw HM, Venugopal R, Wan J, Melloch MR. Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (1 1 1)Si substrates Solid-State Electronics. 45: 417-421. DOI: 10.1016/S0038-1101(01)00045-4  0.583
2000 Liaw HM, Venugopal R, Wan J, Doyle R, Fejes P, Loboda MJ, Melloch MR. Crack-free, single-crystal GaN grown on 100 mm diameter silicon Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1463  0.342
2000 Dinu M, Nakagawa K, Melloch MR, Weiner AM, Nolte DD. Broadband low-dispersion diffraction of femtosecond pulses from photorefractive quantum wells Journal of the Optical Society of America B. 17: 1313. DOI: 10.1364/Josab.17.001313  0.345
2000 Krishnamurthy V, Hargis MC, Melloch MR. 4-GHz large-area (160 000 μm2) MSM-PD on ITG-GaAs Ieee Photonics Technology Letters. 12: 71-73. DOI: 10.1109/68.817497  0.31
2000 Henning JP, Przadka A, Melloch MR, Cooper JA. Novel self-aligned fabrication process for microwave static induction transistors in silicon carbide Ieee Electron Device Letters. 21: 578-580. DOI: 10.1109/55.887471  0.343
2000 Finkelstein G, Glicofridis PI, Tessmer SH, Ashoori RC, Melloch MR. Imaging of low-compressibility strips in the quantum Hall liquid Physical Review B. 61. DOI: 10.1103/Physrevb.61.R16323  0.314
2000 Chen N, Ueng HJ, Janes DB, Woodall JM, Melloch MR. A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs Journal of Applied Physics. 88: 309-315. DOI: 10.1063/1.373658  0.395
2000 Balasubramanian S, Nolte DD, Melloch MR. Enhanced diffusion in laser-annealed nonstoichiometric AlAs/GaAs heterostructures Journal of Applied Physics. 88: 4576-4581. DOI: 10.1063/1.1308104  0.384
2000 Liu J, Lee T, Janes DB, Walsh BL, Melloch MR, Woodall JM, Reifenberger R, Andres RP. Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers Applied Physics Letters. 77: 373-375. DOI: 10.1063/1.126980  0.335
2000 Lee T, Chen NP, Liu J, Andres RP, Janes DB, Chen EH, Melloch MR, Woodall JM, Reifenberger R. Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs Applied Physics Letters. 76: 212-214. DOI: 10.1063/1.125705  0.384
2000 Finkelstein G, Glicofridis PI, Tessmer SH, Ashoori RC, Melloch MR. Imaging the low compressibility strips formed by the Quantum Hall liquid in a smooth potential gradient Physica E: Low-Dimensional Systems and Nanostructures. 6: 251-254. DOI: 10.1016/S1386-9477(99)00131-9  0.312
2000 Liaw HM, Venugopal R, Wan J, Doyle R, Fejes PL, Melloch MR. GaN epilayers grown on 100 mm diameter Si(111) substrates Solid-State Electronics. 44: 685-690. DOI: 10.1016/S0038-1101(99)00302-0  0.58
2000 Coy JA, Steldt FR, Lahiri I, Melloch MR, Nolte DD. Exciton electroabsorption moments and sum rules Optics Communications. 176: 17-29. DOI: 10.1016/S0030-4018(00)00492-2  0.353
2000 Janes DB, Lee T, Liu J, Batistuta M, Chen N, Walsh BL, Andres RP, Chen E-, Melloch MR, Woodall JM, Reifenberger R. Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications Journal of Electronic Materials. 29: 565-569. DOI: 10.1007/S11664-000-0046-Z  0.372
2000 Janes DB, Batistuta M, Datta S, Melloch MR, Andres RP, Liu J, Chen NP, Lee T, Reifenberger R, Chen EH, Woodall JM. Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers Superlattices and Microstructures. 27: 555-563. DOI: 10.1006/Spmi.2000.0882  0.365
1999 Siders CW, Siders JLW, Taylor AJ, Park S-, Melloch MR, Weiner AM. Generation and characterization of terahertz pulse trains from biased, large-aperture photoconductors. Optics Letters. 24: 241-243. PMID 18071467 DOI: 10.1364/Ol.24.000241  0.32
1999 Cooper JA, Ryu S, LI Y, Matin M, Spitz J, Morisesette DT, McGlothlin HM, Das MK, Melloch MR, Capano MA, Woodall JM. SiC Power Electronic Devices, MOSFETs and Rectifiers Mrs Proceedings. 572. DOI: 10.1557/Proc-572-3  0.572
1999 Janes DB, Kolagunta VR, Batistuta M, Walsh BL, Andres RP, Liu J, Dicke J, Lauterbach J, Pletcher T, Chen EH, Melloch MR, Peckham EL, Ueng HJ, Woodall JM, Lee T, et al. Nanoelectronic device applications of a chemically stable GaAs structure Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1773. DOI: 10.1116/1.590824  0.375
1999 Park SG, Weiner AM, Melloch MR, Siders CW, Siders JLW, Taylor AJ. High-power narrow-band terahertz generation using large-aperture photoconductors Ieee Journal of Quantum Electronics. 35: 1257-1268. DOI: 10.1109/3.777228  0.36
1999 Geursen R, Lahiri I, Dinu M, Melloch MR, Nolte DD. Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells Physical Review B. 60: 10926-10934. DOI: 10.1103/Physrevb.60.10926  0.341
1999 Aguilar M, Carrascosa M, Agulló-López F, Agulló-Rueda F, Melloch MR, Nolte DD. Linear electroabsorption in semi-insulating GaAs/AlGaAs asymmetric double quantum wells Journal of Applied Physics. 86: 3822-3825. DOI: 10.1063/1.371293  0.328
1999 Lita B, Ghaisas S, Goldman RS, Melloch MR. Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices Applied Physics Letters. 75: 4082-4084. DOI: 10.1063/1.125543  0.383
1999 Tziraki M, Jones R, French PMW, Nolte DD, Melloch MR. Short-coherence photorefractive holography in multiple-quantum-well devices using light-emitting diodes Applied Physics Letters. 75: 1363-1365. DOI: 10.1063/1.124694  0.342
1999 Chen CH, Hargis M, Woodall JM, Melloch MR, Reynolds JS, Yablonovitch E, Wang W. GHz bandwidth GaAs light-emitting diodes Applied Physics Letters. 74: 3140-3142. DOI: 10.1063/1.124092  0.375
1999 Lee T, Liu J, Janes DB, Kolagunta VR, Dicke J, Andres RP, Lauterbach J, Melloch MR, McInturff D, Woodall JM, Reifenberger R. An ohmic nanocontact to GaAs Applied Physics Letters. 74: 2869-2871. DOI: 10.1063/1.124041  0.348
1999 Capano MA, Ryu S, Cooper JA, Melloch MR, Rottner K, Karlsson S, Nordell N, Powell A, Walker DE. Surface roughening in ion implanted 4H-silicon carbide Journal of Electronic Materials. 28: 214-218. DOI: 10.1007/S11664-999-0016-Z  0.327
1999 Balasubramanian S, Lahiri I, Ding Y, Melloch MR, Nolte DD. Two-wave-mixing dynamics and nonlinear hot-electron transport in transverse-geometry photorefractive quantum wells studied by moving gratings Applied Physics B: Lasers and Optics. 68: 863-869. DOI: 10.1007/S003400050716  0.344
1999 Chaudhuri S, Bagwell PF, McInturff D, Chang JCP, Paak S, Melloch MR, Woodall JM, Pekarek TM, Crooker BC. Is the ‘Finite Bias Anomaly’ in planar GaAs-superconductor junctions caused by point-contact-like structures? Superlattices and Microstructures. 25: 745-755. DOI: 10.1006/Spmi.1999.0758  0.359
1998 Jones R, Tziraki M, French PMW, Kwolek KM, Nolte DD, Melloch MR. Direct-to-video holographic 3-D imaging using photorefractive multiple quantum well devices: errata. Optics Express. 2: 552-552. PMID 19381228 DOI: 10.1364/Oe.2.000552  0.32
1998 Lahiri I, Pyrak-Nolte L, Nolte D, Melloch M. Transient dynamics during two-wave mixing in photorefractive quantum well diodes using moving gratings. Optics Express. 2: 432-8. PMID 19381212 DOI: 10.1364/Oe.2.000432  0.311
1998 Jones R, Barry NP, Hyde SC, French PM, Kwolek KW, Nolte DD, Melloch MR. Direct-to-video holographic readout in quantum wells for three-dimensional imaging through turbid media. Optics Letters. 23: 103-5. PMID 18084426 DOI: 10.1364/Ol.23.000103  0.325
1998 Lahiri I, Nolte DD, Melloch MR, Klein MB. Oscillatory mode coupling and electrically strobed gratings in photorefractive quantum-well diodes. Optics Letters. 23: 49-51. PMID 18084408 DOI: 10.1364/Ol.23.000049  0.326
1998 Cooper JA, Melloch MR, Woodall JM, Spitz J, Schoen KJ, Henning J. Recent Advances in SiC Power Devices Materials Science Forum. 895-900. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.895  0.552
1998 Spitz J, Melloch MR, Cooper JA, Capano MA. High-voltage (2.6 kV) lateral DMOSFETs in 4H-SiC Materials Science Forum. 264: 1005-1008. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1005  0.59
1998 Prabhu SS, Chen Y, Ralph SE, Juodawlkis PW, Gross MC, Scott Rodgers J, Kenan RP, Verber CM, Melloch MR, McInturff DT. Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown multiple quantum wells Proceedings of Spie - the International Society For Optical Engineering. 3277: 244-254. DOI: 10.1117/12.306162  0.387
1998 Spitz J, Melloch MR, Cooper JA, Capano MA. 2.6 kV 4H-SiC lateral DMOSFET's Ieee Electron Device Letters. 19: 100-102. DOI: 10.1109/55.663527  0.599
1998 Schoen KJ, Henning JP, Woodall JM, Cooper JA, Melloch MR. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC Ieee Electron Device Letters. 19: 97-99. DOI: 10.1109/55.663526  0.355
1998 Canoglu E, Garmire E, Lahiri I, Nolte DD, Melloch MR. Pre-illumination to control the active trap density in a semi-insulating MQW device Ieee Journal of Quantum Electronics. 34: 1877-1881. DOI: 10.1109/3.720222  0.358
1998 Jones R, Barry NP, Hyde SCW, Tziraki M, Dainty JC, French PMW, Nolte DD, Kwolek KM, Melloch MR. Real-time 3-D holographic imaging using photorefractive media including multiple-quantum-well devices Ieee Journal On Selected Topics in Quantum Electronics. 4: 360-369. DOI: 10.1109/2944.686743  0.304
1998 Schoen KJ, Woodall JM, Cooper JA, Melloch MR. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers Ieee Transactions On Electron Devices. 45: 1595-1604. DOI: 10.1109/16.701494  0.388
1998 Ryu SH, Kornegay KT, Cooper JA, Melloch MR. Digital CMOS IC's in 6H-SiC operating on a 5-V power supply Ieee Transactions On Electron Devices. 45: 45-53. DOI: 10.1109/16.658810  0.371
1998 Lam MP, Das MK, Pan JN, Kornegay KT, Cooper JA, Melloch MR. Effects of nitrogen implant activation on the SiC/SiO2 interface of 6H-SiC Self-Aligned NMOSFET's Ieee Transactions On Electron Devices. 45: 565-567. DOI: 10.1109/16.658696  0.321
1998 Lahiri I, Pyrak-Nolte LJ, Nolte DD, Melloch MR, Kruger RA, Bacher GD, Klein MB. Laser-based ultrasound detection using photorefractive quantum wells Applied Physics Letters. 73: 1041-1043. DOI: 10.1063/1.122078  0.32
1998 Tessmer SH, Glicofridis PI, Ashoorl RC, Levltov LS, Melloch MR. Subsurface charge accumulation imaging of a quantum Hall liquid Nature. 392: 51-54. DOI: 10.1038/32112  0.356
1998 Das MK, Cooper JA, Melloch MR. Effect of the epilayer characteristics and processing conditions on the thermally oxidized SiO 2 /SiC interface Journal of Electronic Materials. 27: 353-357. DOI: 10.1007/S11664-998-0414-7  0.319
1998 Henning JP, Schoen KJ, Melloch MR, Woodall JM, Cooper JA. Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions Journal of Electronic Materials. 27: 296-299. DOI: 10.1007/S11664-998-0403-X  0.394
1997 Hannan M, Grundbacher R, Fay P, Adesida I, Giannetta RW, Wagner CJ, Melloch MR. Fabrication and transport study of finite lateral superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2821-2824. DOI: 10.1116/1.589735  0.381
1997 Ryu S, Kornegay KT, Cooper JA, Melloch MR. Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process Ieee Electron Device Letters. 18: 194-196. DOI: 10.1109/55.568759  0.33
1997 Shenoy JN, Cooper JA, Melloch MR. High-voltage double-implanted power MOSFET's in 6H-SiC Ieee Electron Device Letters. 18: 93-95. DOI: 10.1109/55.556091  0.318
1997 Brubaker RM, Ding Y, Nolte DD, Melloch MR, Weiner AM. Bandwidth-limited diffraction of femtosecond pulses from photorefractive quantum wells Ieee Journal of Quantum Electronics. 33: 2150-2157. DOI: 10.1109/3.644095  0.306
1997 Lam MP, Kornegay KT, Cooper JA, Melloch MR. Planar 6h-sic mesfet's with vanadium implanted channel termination Ieee Transactions On Electron Devices. 44: 907-910. DOI: 10.1109/16.568059  0.329
1997 Ahmed S, Melloch MR, Harmon ES, McInturff DT, Woodall JM. Use of nonstoichiometry to form GaAs tunnel junctions Applied Physics Letters. 71: 3667-3669. DOI: 10.1063/1.120475  0.389
1997 Kolagunta VR, Janes DB, Melloch MR, Youtsey C. Sidewall gated double well quasi-one-dimensional resonant tunneling transistors Applied Physics Letters. 71: 3379-3381. DOI: 10.1063/1.120342  0.373
1997 Ueng HJ, Kolagunta VR, Janes DB, Webb KJ, McInturff DT, Melloch MR. Annealing stability and device application of nonalloyed ohmic contacts using a low temperature grown GaAs cap on thin n+ GaAs layers Applied Physics Letters. 71: 2496-2498. DOI: 10.1063/1.120099  0.411
1997 Xu B, Hu Q, Melloch MR. Electrically pumped tunable terahertz emitter based on intersubband transition Applied Physics Letters. 71: 440-442. DOI: 10.1063/1.119572  0.318
1997 Prabhu SS, Ralph SE, Melloch MR, Harmon ES. Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy Applied Physics Letters. 70: 2419-2421. DOI: 10.1063/1.118890  0.396
1997 Wang C, Linke RA, Nolte DD, Melloch MR, Trivedi S. Enhanced detection bandwidth for optical doppler frequency measurements using moving space charge field effects in GaAs multiple quantum wells Applied Physics Letters. 70: 2034-2036. DOI: 10.1063/1.118775  0.368
1997 D'Souza SL, Melloch MR, Lundstrom MS, Harmon ES. Technique for measurement of the minority carrier mobility with a bipolar junction transistor Applied Physics Letters. 70: 475-477. DOI: 10.1063/1.118185  0.328
1997 Ahmed S, Melloch MR, McInturff DT, Woodall JM, Harmon ES. Low-temperature grown GaAs tunnel junctions Electronics Letters. 33: 1585-1587. DOI: 10.1049/El:19971047  0.385
1997 Chappel DC, Smith JP, Taylor S, Eccleston W, Das MK, Cooper JA, Melloch MR. High frequency CV characteristics of plasma oxidised silicon carbide Electronics Letters. 33: 97-98. DOI: 10.1049/El:19970055  0.348
1997 Pan JN, Cooper JA, Melloch MR. Activation of nitrogen implants in 6H-SiC Journal of Electronic Materials. 26: 208-211. DOI: 10.1007/S11664-997-0152-2  0.308
1996 Nolte DD, Lahiri I, Melloch MR. Reflection-geometry photorefractive quantum wells. Optics Letters. 21: 1888-90. PMID 19881835 DOI: 10.1364/Ol.21.001888  0.354
1996 Melloch MR. Molecular beam epitaxy of high-quality, nonstoichiometric multiple quantum wells Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14: 2271. DOI: 10.1116/1.588917  0.393
1996 Dodd PE, Lovejoy ML, Lundstrom MS, Melloch MR, Woodall JM, Pettit D. Demonstration of npn InAs bipolar transistors with inverted base doping Ieee Electron Device Letters. 17: 166-168. DOI: 10.1109/55.485162  0.362
1996 Sheppard ST, Melloch MR, Cooper JA. Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide Ieee Electron Device Letters. 17: 4-6. DOI: 10.1109/55.475559  0.319
1996 Hyde SCW, Jones R, Barry NP, Dainty JC, French PMW, Kwolek KM, Nolte DD, Melloch MR. Depth-resolved holography through turbid media using photorefraction Ieee Journal On Selected Topics in Quantum Electronics. 2: 965-975. DOI: 10.1109/2944.577323  0.314
1996 Hu Q, Verghese S, Wyss RA, Schäpers T, Alamo Jd, Feng S, Yakubo K, Rooks MJ, Melloch MR, Förster A. High-frequency ( THz) studies of quantum-effect devices Semiconductor Science and Technology. 11: 1888-1894. DOI: 10.1088/0268-1242/11/12/021  0.331
1996 Melloch MR, Nolte DD, Woodall JM, Chang JCP, Janes DB, Harmon ES. Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems Critical Reviews in Solid State and Materials Sciences. 21: 189-263. DOI: 10.1080/10408439608241256  0.345
1996 Kolagunta VR, Janes DB, Chen GL, Webb KJ, Melloch MR, Youtsey C. Self‐aligned sidewall gated resonant tunneling transistors Applied Physics Letters. 69: 374-376. DOI: 10.1063/1.118065  0.389
1996 Lahiri I, Nolte DD, Melloch MR, Woodall JM, Walukiewicz W. Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations Applied Physics Letters. 69: 239-241. DOI: 10.1063/1.117936  0.318
1996 Jones R, Hyde SCW, Lynn MJ, Barry NP, Dainty JC, French PMW, Kwolek KM, Nolte DD, Melloch MR. Holographic Storage And High Background Imaging Using Photorefractive Multiple Quantum Wells Applied Physics Letters. 69: 1837-1839. DOI: 10.1063/1.117450  0.325
1996 Lahiri I, Brubaker RM, Nolte DD, Melloch MR. Two‐wave mixing in Stark geometry photorefractive quantum wells using moving gratings Applied Physics Letters. 69: 3414-3416. DOI: 10.1063/1.117277  0.319
1996 Chen EH, McInturff DT, Chin TP, Melloch MR, Woodall JM. Use of annealed low‐temperature grown GaAs as a selective photoetch‐stop layer Applied Physics Letters. 68: 1678-1680. DOI: 10.1063/1.115903  0.359
1996 Xie W, Shenoy JN, Sheppard ST, Melloch MR, Cooper JA. The Effect Of Thermal Processing On Polycrystalline Silicon/Sio2/6H-Sic Metal-Oxide-Semiconductor Devices Applied Physics Letters. 68: 2231-2233. DOI: 10.1063/1.115868  0.367
1996 Wang Y, Cooper JA, Melloch MR, Sheppard ST, Palmour JW, Lipkin LA. Experimental characterization of electron-hole generation in silicon carbide Journal of Electronic Materials. 25: 899-907. DOI: 10.1007/Bf02666656  0.338
1995 Harmon ES, McInturff DT, Melloch MR, Woodall JM. Novel GaAs photodetector with gain for long wavelength detection Journal of Vacuum Science & Technology B. 13: 768-770. DOI: 10.1116/1.588159  0.37
1995 Parks C, Ramdas AK, Melloch MR, Steblovsky G, Ram‐Mohan LR, Luo H. Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers Journal of Vacuum Science & Technology B. 13: 657-659. DOI: 10.1116/1.587934  0.348
1995 Janes DB, Webb KJ, Carroll MS, Starnes GE, Huang KC, Shenoy J, Melloch MR. Direct current and microwave characterization of integrated resonant tunneling diodes Journal of Applied Physics. 78: 6616-6625. DOI: 10.1063/1.360483  0.34
1995 Patkar MP, Lundstrom MS, Melloch MR. Characterization of photon recycling in thin crystalline GaAs light emitting diodes Journal of Applied Physics. 78: 2817-2822. DOI: 10.1063/1.360081  0.409
1995 Atique N, Harmon ES, Chang JCP, Woodall JM, Melloch MR, Otsuka N. Electrical and structural properties of Be‐ and Si‐doped low‐temperature‐grown GaAs Journal of Applied Physics. 77: 1471-1476. DOI: 10.1063/1.358895  0.384
1995 Nolte DD, Chen NP, Melloch MR, Montemagno C, Haegel NM. Electroabsorption field imaging between coplanar metal contactson semi-insulating semiconductor epilayers Applied Physics Letters. 72. DOI: 10.1063/1.116761  0.306
1995 Lahiri I, Aguilar M, Nolte DD, Melloch MR. High-efficiency Stark-geometry photorefractive quantum wells with intrinsic cladding layers Applied Physics Letters. 517. DOI: 10.1063/1.116385  0.399
1995 Chang JCP, Woodall JM, Melloch MR, Lahiri I, Nolte DD, Li NY, Tu CW. Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x-ray diffraction Applied Physics Letters. 67: 3491. DOI: 10.1063/1.115257  0.398
1995 Kwolek KM, Melloch MR, Nolte DD, Brost GA. Photorefractive asymmetric Fabry–Pérot quantum wells: Transverse‐field geometry Applied Physics Letters. 67: 736-738. DOI: 10.1063/1.115209  0.355
1995 Lovejoy ML, Melloch MR, Lundstrom MS. Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs Applied Physics Letters. 67: 1101. DOI: 10.1063/1.114974  0.34
1995 Lahiri I, Nolte DD, Chang JCP, Woodall JM, Melloch MR. The role of excess arsenic in interface mixing in low-temperature-grown AlAs/GaAs superlattices Applied Physics Letters. 67: 1244. DOI: 10.1063/1.114385  0.37
1995 Wyss RA, Eugster CC, del Alamo JA, Hu Q, Rooks MJ, Melloch MR. Far‐infrared radiation‐induced thermopower in a quantum point contact Applied Physics Letters. 66: 1144-1146. DOI: 10.1063/1.113840  0.335
1995 Patkar MP, Chin TP, Woodall JM, Lundstrom MS, Melloch MR. Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs Applied Physics Letters. 1412. DOI: 10.1063/1.113218  0.352
1995 Kumar A, Eugster CC, Orlando TP, Antoniadis DA, Kinaret JM, Rooks MJ, Melloch MR. Correlation of oscillations in a quantum dot with three contacts Applied Physics Letters. 1379. DOI: 10.1063/1.113207  0.373
1995 Lahiri I, Nolte DD, Harmon ES, Melloch MR, Woodall JM. Ultrafast‐lifetime quantum wells with sharp exciton spectra Applied Physics Letters. 66: 2519-2521. DOI: 10.1063/1.113153  0.37
1995 Pan JN, Cooper JA, Melloch MR. Self-aligned 6H-SiC MOSFETs with improved current drive Electronics Letters. 31: 1200-1201. DOI: 10.1049/El:19950800  0.335
1995 Shenoy JN, Chindalore GL, Melloch MR, Cooper JA, Palmour JW, Irvine KG. Characterization and optimization of the SiO 2 /SiC metal-oxide semiconductor interface Journal of Electronic Materials. 24: 303-309. DOI: 10.1007/Bf02659691  0.364
1995 Cohen EB, Janes DB, Webb KJ, Shenoy JN, Woodall JM, Melloch MR. 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor Superlattices and Microstructures. 17: 345-349. DOI: 10.1006/Spmi.1995.1061  0.357
1995 Kolagunta VR, Janes DB, Chen GL, Webb KJ, Melloch MR. Vertical three-terminal structures in semiconductor heterostructure quantum wells using a novel sidewall gating technique Superlattices and Microstructures. 17: 339-343. DOI: 10.1006/Spmi.1995.1060  0.381
1994 Nolte D, Melloch M. Bandgap and Defect Engineering for Semiconductor Holographic Materials: Photorefractive Quantum Wells and Thin Films Mrs Bulletin. 19: 44-49. DOI: 10.1557/S0883769400039683  0.316
1994 Brubaker RM, Wang QN, Nolte DD, Harmon ES, Melloch MR. Steady-state four-wave mixing in photorefractive quantum wells with femtosecond pulses Journal of the Optical Society of America B. 11: 1038. DOI: 10.1364/Josab.11.001038  0.3
1994 Xie W, Cooper JA, Melloch MR. Monolithic NMOS digital integrated circuits in 6H-SiC Ieee Electron Device Letters. 15: 455-457. DOI: 10.1109/55.334665  0.318
1994 Xie W, Cooper JA, Melloch MR, Palmour JW, Carter CH. A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications Ieee Electron Device Letters. 15: 212-214. DOI: 10.1109/55.286695  0.308
1994 Sheppard ST, Melloch MR, Cooper JA. Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC Ieee Transactions On Electron Devices. 41: 1257-1264. DOI: 10.1109/16.293356  0.305
1994 Huang K, Carroll M, Starnes G, Lake R, Janes D, Webb K, Melloch M. Numerically generated resonant tunneling diode equivalent circuit parameters Journal of Applied Physics. 76: 3850-3857. DOI: 10.1063/1.357389  0.312
1994 Sheppard ST, Cooper JA, Melloch MR. Nonequilibrium Characteristics Of The Gate-Controlled Diode In 6H-Sic Journal of Applied Physics. 75: 3205-3207. DOI: 10.1063/1.357017  0.374
1994 Chang JCP, Otsuka N, Harmon ES, Melloch MR, Woodall JM. Precipitation in Fe‐ or Ni‐implanted and annealed GaAs Applied Physics Letters. 65: 2801-2803. DOI: 10.1063/1.112570  0.319
1994 Kwolek KM, Melloch MR, Nolte DD. Dynamic holography in a reflection/transmission photorefractive quantum‐well asymmetric Fabry–Perot Applied Physics Letters. 65: 385-387. DOI: 10.1063/1.112336  0.333
1994 Harmon ES, Melloch MR, Lundstrom MS, Cardone F. Thermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors Applied Physics Letters. 64: 205-207. DOI: 10.1063/1.111505  0.336
1994 Harmon ES, Melloch MR, Lundstrom MS. Effective band-gap shrinkage in GaAs Applied Physics Letters. 64: 502-504. DOI: 10.1063/1.111110  0.349
1994 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BR, Ahrenkiel RK. Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique Journal of Electronic Materials. 23: 669-673. DOI: 10.1007/Bf02653354  0.352
1994 Mahadev V, Melloch MR, Woodall JM, Otsuka N. Effect of dopants on arsenic precipitation in GaAs deposited at low temperatures Journal of Electronic Materials. 23: 1015-1020. DOI: 10.1007/Bf02650369  0.374
1993 Melloch MR, Otsuka N, Harmon ES, Nolte DD, Woodall JM, McInturff DT. Physics and Applications of Metallic Arsenic Clusters in GaAs Based Layer Structures Japanese Journal of Applied Physics. 32: 771. DOI: 10.7567/Jjaps.32S3.771  0.304
1993 Melloch MR. Arsenic cluster engineering for excitonic electro-optics Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11: 795. DOI: 10.1116/1.586791  0.302
1993 Sanders JW, Pan J, Xie M, Sheppard ST, Mathur M, Cooper JA, Melloch MR. MOS characterization of thermally oxided 6H silicon carbide Ieee Transactions On Electron Devices. 40: 2130-2131. DOI: 10.1109/16.239812  0.322
1993 Woodall JM, Kirchner PD, Freeouf JL, McInturff DT, Melloch MR, Pollak FH. The Continuing Drama of the Semiconductor Interface Philosophical Transactions of the Royal Society A. 344: 521-532. DOI: 10.1098/Rsta.1993.0105  0.337
1993 Melloch MR, Mahalingam K, Otsuka N, Woodall JM, Warren AC. Comment on arsenic precipitate coarsening in GaAs epilayers Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 67: 1495-1496. DOI: 10.1080/01418619308225369  0.315
1993 Wang QN, Nolte DD, Melloch MR. Hybrid resonant/near‐resonant photorefractive structure: InGaAs/GaAs multiple quantum wells Journal of Applied Physics. 74: 4254-4256. DOI: 10.1063/1.354438  0.371
1993 Lush GB, Melloch MR, Lundstrom MS, MacMillan HF, Asher S. Concentration-dependent optical-absorption coefficient in n-type GaAs Journal of Applied Physics. 74: 4694-4702. DOI: 10.1063/1.354336  0.369
1993 Harmon ES, Melloch MR, Woodall JM, Nolte DD, Otsuka N, Chang CL. Carrier lifetime versus anneal in low temperature growth GaAs Applied Physics Letters. 63: 2248-2250. DOI: 10.1063/1.110542  0.363
1993 Harmon ES, Lovejoy ML, Melloch MR, Lundstrom MS, De Lyon TJ, Woodall JM. Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs Applied Physics Letters. 63: 536-538. DOI: 10.1063/1.109997  0.333
1993 Harmon ES, Lovejoy ML, Melloch MR, Lundstrom MS, Ritter D, Hamm RA. Minority-carrier mobility enhancement in p+ InGaAs lattice matched to InP Applied Physics Letters. 63: 636-638. DOI: 10.1063/1.109974  0.34
1993 McInturff DT, Woodall JM, Warren AC, Braslau N, Pettit GD, Kirchner PD, Melloch MR. Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes Applied Physics Letters. 62: 2367-2368. DOI: 10.1063/1.109392  0.32
1993 Nolte DD, Melloch MR, Woodall JM, Ralph SJ. Enhanced electro‐optic properties of low‐temperature‐growth GaAs and AlGaAs Applied Physics Letters. 62: 1356-1358. DOI: 10.1063/1.108677  0.327
1993 Wang Y, Ramdani J, He Y, Bedair S, Cooper J, Melloch M. Long-term charge storage in GaP pn junction capacitors Electronics Letters. 29: 1154. DOI: 10.1049/El:19930772  0.328
1993 Melloch MR, Woodall JM, Otsuka N, Mahalingam K, Chang CL, Nolte DD. GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites Materials Science and Engineering B. 22: 31-36. DOI: 10.1016/0921-5107(93)90219-D  0.312
1993 Melloch MR. Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases Thin Solid Films. 231: 74-85. DOI: 10.1016/0040-6090(93)90704-S  0.367
1993 Melloch MR, Chang CL, Otsuka N, Mahalingam K, Woodall JM, Kirchner PD. Two-dimensional arsenic-precipitate structures in GaAs Journal of Crystal Growth. 127: 499-502. DOI: 10.1016/0022-0248(93)90669-N  0.37
1993 Matyi RJ, Melloch MR, Woodall JM. Structural analysis of as-deposited and annealed low-temperature gallium arsenide Journal of Crystal Growth. 129: 719-727. DOI: 10.1016/0022-0248(93)90508-T  0.373
1993 Chang CL, Mahalingam K, Otsuka N, Melloch MR, Woodall JM. Precipitation of arsenic in doped GaAs Journal of Electronic Materials. 22: 1413-1416. DOI: 10.1007/Bf02649988  0.337
1993 Look DC, Melloch MR. Special Issue on Low-Temperature Grown GaAs and Related Materials - Foreword Journal of Electronic Materials. 22: 1373-1373. DOI: 10.1007/Bf02649979  0.314
1992 Warren AC, Woodall JM, Kirchner PD, Yin X, Pollak F, Melloch MR, Otsuka N, Mahalingam K. Role of excess As in low-temperature-grown GaAs. Physical Review. B, Condensed Matter. 46: 4617-4620. PMID 10004217 DOI: 10.1103/Physrevb.46.4617  0.364
1992 Eugster CC, del Alamo JA, Melloch MR, Rooks MJ. Effects of single scatterers on transport and tunneling in a dual-electron-waveguide device. Physical Review. B, Condensed Matter. 46: 10146-10151. PMID 10002854 DOI: 10.1103/Physrevb.46.10146  0.326
1992 Nolte DD, Brubaker RM, Wang QN, Melloch MR. Spatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum Wells Materials Science Forum. 1357-1362. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.1357  0.302
1992 Wang Q, Brubaker RM, Nolte DD, Melloch MR. Photoinduced Space-Charge Gratings in Semi-Insulating Multiple Quantum Wells Mrs Proceedings. 261: 203. DOI: 10.1557/Proc-261-203  0.301
1992 Wang Q, Melloch M, Brubaker RM, Nolte DD. Photorefractive quantum wells: transverse Franz–Keldysh geometry Journal of the Optical Society of America B. 9: 1626. DOI: 10.1364/Josab.9.001626  0.37
1992 Warren AC, Woodall JM, Kirchner PD, Yin X, Guo X, Pollak FH, Melloch MR. Electromodulation study of GaAs with excess arsenic Journal of Vacuum Science & Technology B. 10: 1904-1907. DOI: 10.1116/1.586220  0.377
1992 Mahalingam K, Otsuka N, Melloch MR, Woodall JM, Warren AC. Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy Journal of Vacuum Science & Technology B. 10: 812-814. DOI: 10.1116/1.586122  0.343
1992 Ahrenkiel RK, Keyes BM, MacMillan HF, Lush GB, Melloch MR, Lundstrom MS. Minority-carrier lifetime and photon recycling in n-GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 990-995. DOI: 10.1116/1.577892  0.363
1992 Ling ZG, Cooper JA, Melloch MR. A vertically integrated GaAs bipolar/FET DRAM cell with internal gain Ieee Electron Device Letters. 13: 633-635. DOI: 10.1109/55.192868  0.302
1992 Stellwag TB, Cooper JA, Melloch MR. A vertically integrated GaAs bipolar dynamic RAM cell with storage times of 4.5 h at room temperature Ieee Electron Device Letters. 13: 129-131. DOI: 10.1109/55.144981  0.327
1992 Melloch MR, Nolte DD, Woodall JM, Ralphe SE. High-density optical storage using arsenic nanoclusters in GaAs and AlGaAs Ieee Transactions On Electron Devices. 39: 2654-2655. DOI: 10.1109/16.163514  0.366
1992 Melloch MR, Otsuka N, Mahalingam K, Chang CL, Woodall JM, Pettit GD, Kirchner PD, Cardone F, Warren AC, Nolte DD. Arsenic cluster dynamics in doped GaAs Journal of Applied Physics. 72: 3509-3513. DOI: 10.1063/1.352326  0.394
1992 Lush GB, MacMillan HF, Keyes BM, Levi DH, Melloch MR, Ahrenkiel RK, Lundstrom MS. A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition Journal of Applied Physics. 72: 1436-1442. DOI: 10.1063/1.351704  0.36
1992 Stellwag TB, Melloch MR, Cooper JA, Sheppard ST, Nolte DD. Increased thermal generation rate in GaAs due to electron‐beam metallization Journal of Applied Physics. 71: 4509-4514. DOI: 10.1063/1.350795  0.332
1992 Melloch MR, Otsuka N, Mahalingam K, Chang CL, Kirchner PD, Woodall JM, Warren AC. Formation of two-dimensional arsenic-precipitate arrays in GaAs Applied Physics Letters. 61: 177-179. DOI: 10.1063/1.108210  0.356
1992 Lush GB, Melloch MR, Lundstrom MS, Levi DH, Ahrenkiel RK, MacMillan HF. Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films Applied Physics Letters. 61: 2440-2442. DOI: 10.1063/1.108190  0.363
1992 Lovejoy ML, Melloch MR, Lundstrom MS, Ahrenkiel RK. Minority hole mobility in n+GaAs Applied Physics Letters. 61: 2683-2684. DOI: 10.1063/1.108108  0.337
1992 Nolte DD, Melloch MR, Ralph SJ, Woodall JM. High‐density optical storage based on nanometer‐size arsenic clusters in low‐temperature‐growth GaAs Applied Physics Letters. 61: 3098-3100. DOI: 10.1063/1.107973  0.312
1992 Kleine JS, Cooper JA, Melloch MR. Characterization of a GaAs/AlGaAs modulation‐doped dynamic random access memory cell Applied Physics Letters. 61: 834-836. DOI: 10.1063/1.107760  0.313
1992 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, De Lyon TJ, Woodall JM. Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon Applied Physics Letters. 61: 822-824. DOI: 10.1063/1.107756  0.348
1992 Gardner CT, Cooper JA, Melloch MR, Palmour JW, Carter CH. Dynamic charge storage in 6H silicon carbide Applied Physics Letters. 61: 1185-1186. DOI: 10.1063/1.107641  0.304
1992 Matyi RJ, Melloch MR, Woodall JM. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide Applied Physics Letters. 60: 2642-2644. DOI: 10.1063/1.106881  0.36
1992 Viturro RE, Melloch MR, Woodall JM. Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy Applied Physics Letters. 60: 3007-3009. DOI: 10.1063/1.106791  0.39
1992 Mahalingam K, Otsuka N, Melloch MR, Woodall JM. Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures Applied Physics Letters. 60: 3253-3255. DOI: 10.1063/1.106710  0.347
1992 McInturff DT, Woodall JM, Warren AC, Braslau N, Pettit GD, Kirchner PD, Melloch MR. Photoemission spectroscopy of GaAs:As photodiodes Applied Physics Letters. 60: 448-450. DOI: 10.1063/1.106630  0.413
1992 Eugster CC, Alamo JAd, Rooks MJ, Melloch MR. Split‐gate dual‐electron waveguide device Applied Physics Letters. 60: 642-644. DOI: 10.1063/1.106579  0.332
1992 Lovejoy ML, Melloch MR, Ahrenkiel RK, Lundstrom MS. Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III-V semiconductors Solid State Electronics. 35: 251-259. DOI: 10.1016/0038-1101(92)90229-6  0.308
1991 Viturro RE, Melloch MR, Woodall JM. Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs Mrs Proceedings. 241. DOI: 10.1557/Proc-241-81  0.391
1991 Warren AC, Woodall JM, Burroughes JH, Kirchner PD, Heinrich HK, Arjavalingam G, Katzenellenbogen N, Grischkowsky D, Melloch MR, Otsuka N, Mahalingam K, Pollak FH, Yin X. The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) Mrs Proceedings. 241: 15. DOI: 10.1557/Proc-241-15  0.305
1991 Melloch MR, Otsuka N, Mahalingam K, Warrew AC, Woodall JM, Kirchner PD. Incorporation of Excess Arsenic in GaAs and AlGaAs Epilayers Grown at Low Substrate Temperatures by Molecular Beam Epitaxy Mrs Proceedings. 241. DOI: 10.1557/Proc-241-113  0.346
1991 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, Klausmeier-Brown ME. Zero-field time-of-flight measurements of electron diffusion in p+-gaas Japanese Journal of Applied Physics. 30: L135-L137. DOI: 10.1143/Jjap.30.L135  0.343
1991 Mahalingam K, Otsuka N, Melloch MR, Woodall JM, Warren AC. Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2328-2332. DOI: 10.1116/1.585742  0.355
1991 Freeouf JL, Warren AC, Kirchner PD, Woodall JM, Melloch MR. Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2355-2357. DOI: 10.1116/1.585703  0.355
1991 Melloch MR, Harmon ES, Emery KA. Large-Area, 8-cm2 GaAs Solar Cells Fabricated from MBE Material Ieee Electron Device Letters. 12: 137-139. DOI: 10.1109/55.75736  0.365
1991 Dodd PE, Melloch MR, Lundstrom MS. High-Gain, Low-Leakage Gaas Pseudo-Hbt's for Operation in Reduced Temperature Environments Ieee Electron Device Letters. 12: 629-631. DOI: 10.1109/55.119220  0.399
1991 Neudeck PG, Carpenter MS, Melloch MR, Cooper JA. Significant Long-Term Reduction in N-Channel Mesfet Subthreshold Leakage using Ammonium-Sulfide Surface Treated Gates Ieee Electron Device Letters. 12: 553-555. DOI: 10.1109/55.119186  0.362
1991 Warren AC, Burroughes JH, Woodall JM, Mcinturff DT, Hodgson RT, Melloch MR. 1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As) Ieee Electron Device Letters. 12: 527-529. DOI: 10.1109/55.119178  0.396
1991 Dodd PE, Stellwag TB, Melloch MR, Lundstrom MS. Surface and Perimeter Recombination in GaAs Diodes: An Experimental and Theoretical Investigation Ieee Transactions On Electron Devices. 38: 1253-1261. DOI: 10.1109/16.81614  0.343
1991 Patkar MP, Lundstrom MS, Melloch MR. Transistor-based studies of heavy doping effects in n-GaAs Applied Physics Letters. 59: 1853-1854. DOI: 10.1063/1.106416  0.35
1991 Wang QN, Nolte DD, Melloch MR. Two‐wave mixing in photorefractive AlGaAs/GaAs quantum wells Applied Physics Letters. 59: 256-258. DOI: 10.1063/1.105613  0.367
1991 Warren AC, Katzenellenbogen N, Grischkowsky D, Woodall JM, Melloch MR, Otsuka N. Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers Applied Physics Letters. 58: 1512-1514. DOI: 10.1063/1.105162  0.322
1991 Harmon ES, Melloch MR, Lundstrom MS, Lovejoy ML. Experimental determination of the effects of degenerate Fermi statistics on heavily p-doped GaAs Applied Physics Letters. 58: 1647-1649. DOI: 10.1063/1.105152  0.377
1991 Neudeck PG, Kleine JS, Sheppard ST, McDermott BT, Bedair SM, Cooper JA, Melloch MR. Electrical characterization of GaAsPiNjunction diodes grown in trenches by atomic layer epitaxy Applied Physics Letters. 58: 83-85. DOI: 10.1063/1.104453  0.398
1991 Neudeck PG, Cooper JA, Melloch MR. Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structures Applied Physics Letters. 58: 1175-1177. DOI: 10.1063/1.104356  0.336
1991 Dodd PF, Lovejoy ML, Melloch MR, Lundstrom MS. Cryogenic operation of GaAs bipolar transistors with inverted base doping Electronics Letters. 27: 860-861. DOI: 10.1049/El:19910538  0.355
1991 Melloch MR. Review of the application of molecular beam epitaxy for high efficiency solar cell research Solar Cells. 30: 313-321. DOI: 10.1016/0379-6787(91)90064-V  0.306
1991 Melloch MR, Mahalingam K, Otsuka N, Woodall JM, Warren AC. GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates Journal of Crystal Growth. 111: 39-42. DOI: 10.1016/0022-0248(91)90943-Y  0.373
1990 Bedair SM, McDermott BT, Reid KG, Neudeck PG, Cooper JA, Melloch MR. Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy Ieee Electron Device Letters. 11: 261-263. DOI: 10.1109/55.55274  0.322
1990 Dungan TE, Neudeck PG, Melloch MR, Cooper JA. One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applications Ieee Transactions On Electron Devices. 37: 1599-1607. DOI: 10.1109/16.55743  0.341
1990 Tobin SP, Vernon SM, Bajgar C, Wojtczuk SJ, Melloch MR, Keshavarzi A, Stellwag TB, Venkatensan S, Lundstrom MS, Emery KA. Assessment of MOCVD- and MBE-Grown GaAs for High-Efficiency Solar Cell Applications Ieee Transactions On Electron Devices. 37: 469-477. DOI: 10.1109/16.46385  0.322
1990 Chuang HL, Carpenter MS, Melloch MR, Lundstrom MS, Yablonovitch E, Gmitter TJ. Surface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors Applied Physics Letters. 57: 2113-2115. DOI: 10.1063/1.104114  0.3
1990 Warren AC, Woodall JM, Freeouf JL, Grischkowsky D, McInturff DT, Melloch MR, Otsuka N. Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy Applied Physics Letters. 57: 1331-1333. DOI: 10.1063/1.103474  0.374
1990 Melloch MR, Otsuka N, Woodall JM, Warren AC, Freeouf JL. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures Applied Physics Letters. 57: 1531-1533. DOI: 10.1063/1.103343  0.368
1990 Stellwag TB, Melloch MR, Lundstrom MS, Carpenter MS, Pierret RF. Orientation-dependent perimeter recombination in GaAs diodes Applied Physics Letters. 56: 1658-1660. DOI: 10.1063/1.103108  0.357
1990 Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Transistor-based measurements of electron injection currents in p-type GaAs doped 1018-1020 cm-3 Applied Physics Letters. 56: 160-162. DOI: 10.1063/1.103037  0.385
1990 Melloch MR, Carpenter MS, Dungan TE, Li D, Otsuka N. Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments Applied Physics Letters. 56: 1064-1066. DOI: 10.1063/1.102566  0.32
1990 Lundstrom MS, Klausmeier-Brown ME, Melloch MR, Ahrenkiel RK, Keyes BM. Device-related material properties of heavily doped gallium arsenide Solid State Electronics. 33: 693-704. DOI: 10.1016/0038-1101(90)90182-E  0.362
1990 Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Electrical measurements of bandgap shrinkage in heavily doped p-type GaAs Journal of Electronic Materials. 19: 7-11. DOI: 10.1007/Bf02655545  0.361
1989 Qian Q-, Qiu J, Kobayashi M, Gunshor RL, Kolodziejski LA, Melloch MR, Cooper JA, Gonsalves JM, Otsuka N. Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface Mrs Proceedings. 145. DOI: 10.1557/Proc-145-423  0.314
1989 Qian QD, Qiu J, Kobayashi M, Gunshor RL, Melloch MR, Cooper JA. Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface Journal of Vacuum Science & Technology B. 7: 793-798. DOI: 10.1116/1.584602  0.416
1989 Neudeck PG, Dungan TE, Melloch MR, Cooper JA. Electrical characterization of a JFET-accessed GaAs dynamic RAM cell Ieee Electron Device Letters. 10: 477-480. DOI: 10.1109/55.43109  0.313
1989 Klausmeier-Brown ME, Lundstrom MS, Melloch MR. The Effects of Heavy Impurity Doping on Al GaAs/GaAs Bipolar Transistors Ieee Transactions On Electron Devices. 36: 2146-2155. DOI: 10.1109/16.40894  0.402
1989 Kleine JS, Qian QD, Cooper JA, Melloch MR. Electron emission from direct bandgap heterojunction capacitors Ieee Transactions On Electron Devices. 36: 289-299. DOI: 10.1109/16.19928  0.324
1989 Chuang HL, Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Effective minority-carrier hole confinement of Si-doped, n+-n GaAs homojunction barriers Journal of Applied Physics. 66: 273-277. DOI: 10.1063/1.343868  0.363
1989 Kleine JS, Melloch MR, Cooper JA. Effect of Al mole fraction on electron emission at the AlxGa1−xAs/GaAs interface Applied Physics Letters. 55: 1656-1658. DOI: 10.1063/1.102229  0.314
1989 Qian QD, Qiu J, Melloch MR, Cooper JA, Kolodziejski LA, Kobayashi M, Gunshor RL. Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface Applied Physics Letters. 54: 1359-1361. DOI: 10.1063/1.100715  0.382
1989 Qian QD, Qiu J, Glenn JL, O S, Gunshor RL, Kolodziejski LA, Kobayashi M, Otsuka N, Melloch MR, Cooper JA, Haggerott M, Heyen T, Nurmikko AV. II-VI/III-V heterointerfaces: Epilayer-on-epilayer structures Journal of Crystal Growth. 95: 567-571. DOI: 10.1016/0022-0248(89)90468-5  0.355
1988 Klausmeier-Brown ME, DeMoulin PD, Lundstrom MS, Melloch MR, Tobin SP. IVA-5 Measurement of Bandgap Narrowing Effects in p-GaAs and Implications for AlGaAs/GaAs HBT Performance Ieee Transactions On Electron Devices. 35: 2445. DOI: 10.1109/16.8870  0.311
1988 Klausmeier-Brown ME, Kyono CS, DeMoulin PD, Tobin SP, Lundstrom MS, Melloch MR. Sequential Etch Analysis of Electron Injection in p+-GaAs Ieee Transactions On Electron Devices. 35: 1159-1161. DOI: 10.1109/16.3384  0.357
1988 Carpenter MS, Melloch MR, Lundstrom MS, Tobin SP. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes Applied Physics Letters. 52: 2157-2159. DOI: 10.1063/1.99563  0.32
1988 Klausmeier-Brown ME, Lundstrom MS, Melloch MR, Tobin SP. Effects of heavy impurity doping on electron injection in p+-n GaAs diodes Applied Physics Letters. 52: 2255-2257. DOI: 10.1063/1.99529  0.363
1988 Studtmann GD, Gunshor RL, Kolodziejski LA, Melloch MR, Cooper JA, Pierret RF, Munich DP, Choi C, Otsuka N. Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy Applied Physics Letters. 52: 1249-1251. DOI: 10.1063/1.99171  0.386
1988 Chuang HL, Demoulin PD, Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriers Journal of Applied Physics. 64: 6361-6364. DOI: 10.1063/1.342102  0.37
1988 Carpenter MS, Melloch MR, Dungan TE. Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs Applied Physics Letters. 53: 66-68. DOI: 10.1063/1.100572  0.309
1987 Studtmann GS, Gunshor RL, Kolodziejski LA, Melloch MR, Otsuka N, Munich DP, Cooper JA, Pierret RF. VA-8 Pseudomorphic ZnSe/GaAs MISFET Devices Ieee Transactions On Electron Devices. 34: 2378. DOI: 10.1109/T-Ed.1987.23299  0.332
1987 Dungan TE, Cooper JA, Melloch MR. A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM's Ieee Electron Device Letters. 8: 243-245. DOI: 10.1109/Edl.1987.26617  0.332
1987 Gunshor RL, Kolodziejski LA, Melloch MR, Vaziri M, Choi C, Otsuka N. Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers Applied Physics Letters. 50: 200-202. DOI: 10.1063/1.98247  0.346
1987 Melloch MR, McMahon CP, Lundstrom MS, Cooper JA, Qian QD, Bandyopadhyay S. Bias-dependent photoresponse of p+in GaAs/AlAs/GaAs diodes Applied Physics Letters. 50: 161-163. DOI: 10.1063/1.97648  0.386
1987 Rancour DP, Melloch MR, Pierret RF, Lundstrom MS, Klausmeier-Brown ME, Kyono CS. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy Journal of Applied Physics. 62: 1539-1541. DOI: 10.1063/1.339624  0.377
1987 Melloch MR, McMahon CP, Lundstrom MS, Cooper JA, Qian QD. Photocollection efficiency of GaAs/AlAs/GaAs p+-i-n and n+-i-p photodiodes Solar Cells. 21: 233-240. DOI: 10.1016/0379-6787(87)90123-2  0.354
1986 Melloch MR, Bandyopadhyay S, Datta S, Noren R, Lundstrom MS, Tan K, Dungan T, Reifenberger RG, Vaziri M. Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well Journal of Vacuum Science & Technology B. 4: 653-654. DOI: 10.1116/1.583589  0.32
1986 Tan KL, Lundstrom MS, Melloch MR. Effect of impurity trapping on the capacitance‐voltage characteristics of n‐GaAs/N‐AlGaAs heterojunctions Applied Physics Letters. 48: 428-430. DOI: 10.1063/1.96520  0.389
1986 Datta S, Melloch MR, Bandyopadhyay S, Lundstrom MS. Proposed structure for large quantum interference effects Applied Physics Letters. 48: 487-489. DOI: 10.1063/1.96484  0.337
1986 Bandyopadhyay S, Datta S, Melloch MR. Aharonov-Bohm effect in semiconductor micro-structures: novel device possibilities Superlattices and Microstructures. 2: 539-542. DOI: 10.1016/0749-6036(86)90112-6  0.352
1986 Datta S, Bandyopadhyay S, Melloch MR, Reifenberger R, Miller M, Vaziri M, Dungan T, Cahay M, Noren R. Aharonov-Bohm oscillations due to quantum interference between parallel quantum wells Surface Science. 174: 439-443. DOI: 10.1016/0039-6028(86)90449-8  0.355
1985 Datta S, Melloch MR, Gunshor RL. Possibility of an excitonic ground state in quantum wells. Physical Review. B, Condensed Matter. 32: 2607-2609. PMID 9937337 DOI: 10.1103/Physrevb.32.2607  0.325
1980 Melloch MR, Gunshor RL, Liu CL, Pierret RF. Interface transduction in the ZnO‐SiO2‐Si surface acoustic wave device configuration Applied Physics Letters. 37: 147-150. DOI: 10.1063/1.91803  0.313
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