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Gregory L. Snider - Publications

Affiliations: 
University of Notre Dame, Notre Dame, IN, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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109 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Mintairov AM, Lebedev DV, Vlasov AS, Orlov AO, Snider GL, Blundell SA. Nano-photoluminescence of natural anyon molecules and topological quantum computation. Scientific Reports. 11: 21440. PMID 34728665 DOI: 10.1038/s41598-021-00859-6  0.385
2020 Zirkle TA, Filmer MJ, Chisum J, Orlov AO, Dupont-Ferrier E, Rivard J, Huebner M, Sanquer M, Jehl X, Snider GL. Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications Applied Sciences. 10: 8797. DOI: 10.3390/app10248797  0.371
2020 McCabe H, Koziol SM, Snider GL, Blair EP. Tunable, Hardware-Based Quantum Random Number Generation Using Coupled Quantum Dots Ieee Transactions On Nanotechnology. 19: 292-296. DOI: 10.1109/Tnano.2020.2978859  0.471
2020 Filmer MJ, Zirkle TA, Chisum J, Orlov AO, Snider GL. Using single-electron box arrays for voltage sensing applications Applied Physics Letters. 116: 213103. DOI: 10.1063/5.0005425  0.478
2019 Zirkle TA, Bonek RA, Snider GL, Orlov AO. Temperature Effects on Singularity Matching and Parity in a Superconducting Single-Electron Transistor Journal of Low Temperature Physics. 195: 419-428. DOI: 10.1007/S10909-019-02176-9  0.428
2018 Filmer MJ, Snider GL, Orlov AO. Single electron transistors with e-beam evaporation of SiO2 tunnel barriers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 62202. DOI: 10.1116/1.5050379  0.415
2017 Karbasian G, McConnell MS, Orlov A, Nazarov A, Snider G. Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal-insulator-metal tunnel junctions. Nanotechnology. PMID 28387213 DOI: 10.1088/1361-6528/Aa6C06  0.469
2017 Karbasian G, McConnell M, George H, Schneider L, Filmer M, Orlov A, Nazarov A, Snider G. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition Applied Sciences. 7: 246. DOI: 10.3390/App7030246  0.816
2016 McConnell MS, Schneider LC, Karbasian G, Rouvimov S, Orlov AO, Snider GL. Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4937992  0.458
2016 Karbasian G, McConnell MS, Orlov AO, Rouvimov S, Snider GL. Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4935960  0.42
2016 Karbasian G, Orlov AO, Mukasyan AS, Snider GL. Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition 2016 Joint International Eurosoi Workshop and International Conference On Ultimate Integration On Silicon, Eurosoi-Ulis 2016. 32-35. DOI: 10.1109/ULIS.2016.7440045  0.399
2016 Jana RK, Snider GL. Electrostrictive Tunable Capacitors and High-Performance 2D Crystal Transistors for Energy-Efficient Applications Ieee Electron Device Letters. 37: 341-344. DOI: 10.1109/Led.2016.2522099  0.386
2015 Karbasian G, Orlov AO, Snider GL. Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4932156  0.495
2015 Orlov AO, Fay P, Snider GL, Jehl X, Barraud S, Sanquer M. Back-gating effects on radio-frequency reflectometry-based characteriztaion of nanoscale Si single-electron transistors 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348590  0.38
2015 Orlov AO, Fay P, Snider GL, Jehl X, Barraud S, Sanquer M. Dual-port reflectometry technique: Charge identification in nanoscaled single-electron transistors Ieee Nanotechnology Magazine. 9: 24-32. DOI: 10.1109/Mnano.2015.2409411  0.349
2015 Jana RK, Ajoy A, Snider G, Jena D. Transistor Switches Using Active Piezoelectric Gate Barriers Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 35-42. DOI: 10.1109/Jxcdc.2015.2448412  0.396
2014 Karbasian G, Fay PJ, Grace Xing H, Orlov AO, Snider GL. Chemical mechanical planarization of gold Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4863275  0.322
2014 Villis BJ, Orlov AO, Barraud S, Vinet M, Sanquer M, Fay P, Snider G, Jehl X. Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry Applied Physics Letters. 104. DOI: 10.1063/1.4883228  0.465
2014 Li M, Esseni D, Snider G, Jena D, Grace Xing H. Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor Journal of Applied Physics. 115. DOI: 10.1063/1.4866076  0.39
2013 Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, Grace H. Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400GHz Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn14  0.39
2013 Wang R, Li G, Karbasian G, Guo J, Faria F, Hu Z, Yue Y, Verma J, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz Applied Physics Express. 6. DOI: 10.7567/Apex.6.016503  0.379
2013 Wang R, Li G, Karbasian G, Guo J, Song B, Yue Y, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. Quaternary barrier InAlGaN HEMTs with fTfmax of 230/300 GHz Ieee Electron Device Letters. 34: 378-380. DOI: 10.1109/Led.2013.2238503  0.427
2013 Jana RK, Snider GL, Jena D. On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 1469-1472. DOI: 10.1002/Pssc.201300280  0.389
2012 Lee YC, Orlov AO, Snider GL. Composite aluminum silicon-single electron transistor with tunnel FET features Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322143  0.347
2012 Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, et al. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and f T of 370 GHz Ieee Electron Device Letters. 33: 988-990. DOI: 10.1109/Led.2012.2196751  0.405
2011 Wang R, Li G, Verma J, Zimmermann T, Hu Z, Laboutin O, Cao Y, Johnson W, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Si-containing recessed ohmic contacts and 210GHz quaternary barrier InAlGaN high-electron-mobility transistors Applied Physics Express. 4. DOI: 10.1143/Apex.4.096502  0.395
2011 Lee YC, Orlov AO, Snider GL. Fabrication of hybrid metal island/silicon single electron transistor Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3644340  0.746
2011 George HC, Orlova TA, Orlov AO, Snider GL. Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3640752  0.816
2011 Prager AA, George HC, Orlov AO, Snider GL. Experimental demonstration of hybrid CMOS-single electron transistor circuits Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3597833  0.736
2011 Wang R, Li G, Verma J, Sensale-Rodriguez B, Fang T, Guo J, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs Ieee Electron Device Letters. 32: 1215-1217. DOI: 10.1109/Led.2011.2158288  0.429
2011 Wang R, Li G, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. 210-GHz InAlN/GaN HEMTs with dielectric-free passivation Ieee Electron Device Letters. 32: 892-894. DOI: 10.1109/Led.2011.2147753  0.418
2011 Wang R, Saunier P, Tang Y, Fang T, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Enhancement-mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 10-12 on/off current ratio Ieee Electron Device Letters. 32: 309-311. DOI: 10.1109/Led.2010.2095494  0.432
2011 Villis BJ, Orlov AO, Jehl X, Snider GL, Fay P, Sanquer M. Defect detection in nano-scale transistors based on radio-frequency reflectometry Applied Physics Letters. 99. DOI: 10.1063/1.3647555  0.463
2011 Zimmermann T, Cao Y, Li G, Snider G, Jena D, Xing H. Subcritical barrier AlN/GaN E/D-mode HFETs and inverters Physica Status Solidi (a) Applications and Materials Science. 208: 1620-1622. DOI: 10.1002/Pssa.201001178  0.37
2010 George HC, Orlov AO, Snider GL. Platinum single-electron transistors with tunnel barriers made by atomic layer deposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6L6-C6L8. DOI: 10.1116/1.3511432  0.801
2010 Wang R, Saunier P, Xing X, Lian C, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385. DOI: 10.1109/Led.2010.2072771  0.379
2010 Joyce RA, Lee YC, Orlov AO, Snider GL. A response to "room temperature single-electron transistor featuring gate-enhanced on-state current" Ieee Electron Device Letters. 31: 249. DOI: 10.1109/Led.2009.2038498  0.754
2010 George HC, Orlov AO, Snider GL. Substrate effects on metal-oxide single electron transistors electrometer measurements Device Research Conference - Conference Digest, Drc. 109-110. DOI: 10.1109/DRC.2010.5551860  0.333
2010 Boechler GP, Whitney JM, Lent CS, Orlov AO, Snider GL. Fundamental limits of energy dissipation in charge-based computing Applied Physics Letters. 97. DOI: 10.1063/1.3484959  0.307
2010 George HC, Pierre M, Jehl X, Orlov AO, Sanquer M, Snider GL. Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization Applied Physics Letters. 96. DOI: 10.1063/1.3298557  0.798
2009 George HC, Orlov AO, Joyce RA, Tang Y, Snider GL. Effects of visible light illumination on the conductance of Al/Al O x single-electron transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 3158-3163. DOI: 10.1116/1.3259956  0.799
2009 Prager AA, Orlov AO, Snider GL. Integration of CMOS, single electron transistors, and quantumdot cellular automata 2009 Ieee Nanotechnology Materials and Devices Conference, Nmdc 2009. 54-58. DOI: 10.1109/NMDC.2009.5167548  0.355
2009 Tang Y, Orlov AO, Snider GL, Fay PJ. Radio frequency operation of clocked quantum-dot cellular automata latch Applied Physics Letters. 95. DOI: 10.1063/1.3265919  0.525
2008 Joshi V, Orlov AO, Snider GL. Silicon single-electron transistor with oxide tunnel barriers fabricated using chemical mechanical polishing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 2587-2591. DOI: 10.1116/1.2978877  0.834
2008 Joshi V, Orlov AO, Snider GL. Si based single-electron transistor with ultra-thin oxide tunnel barriers fabricated using controlled CMP Ieee 2008 Silicon Nanoelectronics Workshop, Snw 2008. DOI: 10.1109/SNW.2008.5418427  0.355
2008 Snider GL, Orlov AO, Joshi V, Joyce RA, Qi H, Yadavalli KK, Bernstein GH, Fehlner TP, Lent CS. Electronic quantum-dot cellular automata International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 549-552. DOI: 10.1109/ICSICT.2008.4734600  0.382
2008 Orlov AO, Luo X, Yadavalli KK, Beloborodov IS, Snider GL. Using granular film to suppress charge leakage in a single-electron latch Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.075414  0.826
2007 Joshi V, Orlov AO, Snider GL. Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1034-1037. DOI: 10.1116/1.2433986  0.789
2007 Bernstein GH, Liu Q, Yan M, Sun Z, Kopp D, Porod W, Snider G, Fay P. Quilt packaging: High-density, high-speed interchip communications Ieee Transactions On Advanced Packaging. 30: 731-740. DOI: 10.1109/Tadvp.2007.901643  0.341
2007 Tang Y, Amlani I, Orlov AO, Snider GL, Fay PJ. Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor Nanotechnology. 18. DOI: 10.1088/0957-4484/18/44/445203  0.408
2007 Yadavalli KK, Orlov AO, Timler JP, Lent CS, Snider GL. Fanout gate in quantum-dot cellular automata Nanotechnology. 18. DOI: 10.1088/0957-4484/18/37/375401  0.827
2006 LIEBERMAN M, CHELLAMMA S, VARUGHESE B, WANG Y, LENT C, BERNSTEIN GH, SNIDER G, PEIRIS FC. Quantum-Dot Cellular Automata at a Molecular Scale Annals of the New York Academy of Sciences. 960: 225-239. DOI: 10.1111/J.1749-6632.2002.Tb03037.X  0.518
2006 Snider G, Orlov A, Lent C, Bernstein G, Lieberman M, Fehlner T. Implementations of quantum-dot cellular automata Proceedings of the 2006 International Conference On Nanoscience and Nanotechnology, Iconn. 544-547. DOI: 10.1109/ICONN.2006.340674  0.306
2006 Luo X, Tomcsanyi M, Orlov AO, Kosel TH, Snider GL. Strong cotunneling suppression in a single-electron transistor with granulated metal film island Applied Physics Letters. 89. DOI: 10.1063/1.2243341  0.725
2005 Luo X, Orlov AO, Snider GL. Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips Microelectronics Journal. 36: 308-312. DOI: 10.1016/J.Mejo.2005.02.076  0.455
2005 Kanungo PD, Imre A, Bin W, Orlov A, Snider G, Porod W, Carter NP. Gated hybrid Hall effect device on silicon Microelectronics Journal. 36: 294-297. DOI: 10.1016/J.Mejo.2005.02.075  0.465
2005 Kummamuru RK, Liu M, Orlov AO, Lent CS, Bernstein GH, Snider GL. Temperature dependence of the locked mode in a single-electron latch Microelectronics Journal. 36: 304-307. DOI: 10.1016/J.Mejo.2005.02.050  0.827
2005 Yadavalli KK, Orlov AO, Snider GL, Elam J. Aluminum oxide tunnel barriers for single electron memory devices Microelectronics Journal. 36: 272-276. DOI: 10.1016/J.Mejo.2005.02.024  0.797
2004 Snider GL, Orlov AO, Kummamuru R, Timler J, Toth G, Bernstein GH, Lent CS. Quantum-dot cellular automata International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 2: 875-880. DOI: 10.1557/Proc-696-N7.6  0.786
2004 Yadavalli KK, Anderson NR, Orlova TA, Orlov AO, Snider GL, Elam J. Single electron memory devices utilizing Al 2O 3 tunnel oxide barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3119-3123. DOI: 10.1116/1.1821506  0.81
2004 Luo X, Orlov AO, Snider GL. Fabrication and characterization of Au island single-electron transistors with CrO x step edge junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3128-3132. DOI: 10.1116/1.1815310  0.51
2003 Qi H, Sharma S, Li Z, Snider GL, Orlov AO, Lent CS, Fehlner TP. Molecular quantum cellular automata cells. Electric field driven switching of a silicon surface bound array of vertically oriented two-dot molecular quantum cellular automata. Journal of the American Chemical Society. 125: 15250-9. PMID 14653760 DOI: 10.1021/Ja0371909  0.364
2003 Manimaran M, Snider GL, Lent CS, Sarveswaran V, Lieberman M, Li Z, Fehlner TP. Scanning tunneling microscopy and spectroscopy investigations of QCA molecules. Ultramicroscopy. 97: 55-63. PMID 12801657 DOI: 10.1016/S0304-3991(03)00085-8  0.392
2003 Orlov AO, Kummamuru R, Ramasubramaniam R, Lent CS, Bernstein GH, Snider GL. Clocked quantum-dot cellular automata devices Proceedings of Spie - the International Society For Optical Engineering. 5023: 441-444. DOI: 10.1117/12.514471  0.37
2003 Yadavalli KK, Orlov AO, Snider GL, Korotkov AN. Single electron memory devices: Toward background charge insensitive operation Journal of Vacuum Science & Technology B. 21: 2860-2864. DOI: 10.1116/1.1625957  0.821
2003 Kummamuru RK, Orlov AO, Ramasubramaniam R, Lent CS, Bernstein GH, Snider GL. Operation of a quantum-dot cellular automata (QCA) shift register and analysis of errors Ieee Transactions On Electron Devices. 50: 1906-1913. DOI: 10.1109/Ted.2003.816522  0.805
2003 Yadavalli KK, Orlov AO, Snider GL, Korotkov AN. Background charge insensitive single electron memory devices Proceedings of the Ieee Conference On Nanotechnology. 2: 569-572. DOI: 10.1109/NANO.2003.1230974  0.322
2003 Wang X, Hu W, Ramasubramaniam R, Bernstein GH, Snider G, Lieberman M. Formation, characterization, and sub-50-nm patterning of organosilane monolayers with embedded disulfide bonds: An engineered self-assembled monolayer resist for electron-beam lithography Langmuir. 19: 9748-9758. DOI: 10.1021/La035291E  0.313
2003 Orlov AO, Kummamuru R, Ramasubramaniam R, Lent CS, Bernstein GH, Snider GL. Clocked quantum-dot cellular automata shift register Surface Science. 532: 1193-1198. DOI: 10.1016/S0039-6028(03)00214-0  0.824
2002 Orlov AO, Kummamuru R, Ramasubramaniam R, Lent CS, Bernstein GH, Snider GL. A two-stage shift register for clocked Quantum-Dot Cellular Automata. Journal of Nanoscience and Nanotechnology. 2: 351-5. PMID 12908262 DOI: 10.1166/Jnn.2002.109  0.815
2002 Kummamuru RK, Timler J, Toth G, Lent CS, Ramasubramaniam R, Orlov AO, Bernstein GH, Snider GL. Power gain in a quantum-dot cellular automata latch Applied Physics Letters. 81: 1332-1334. DOI: 10.1063/1.1499511  0.81
2002 Junno T, Carlsson S, Xu H, Samuelson L, Orlov A, Snider G. Single-electron tunneling effects in a metallic double dot device Applied Physics Letters. 80: 667-669. DOI: 10.1063/1.1436532  0.559
2001 Kummamuru RK, Orlov AO, Toth G, Timler J, Rajagopal R, Lent CS, Bernstein GH, Snider GL. Power gain in a Quantum-dot Cellular Automata (QCA) shift register Proceedings of the Ieee Conference On Nanotechnology. 2001: 431-436. DOI: 10.1109/NANO.2001.966461  0.316
2001 Orlov AO, Kummamuru R, Ramasubramaniam R, Lent CS, Bernstein GH, Snider GL. Clocked quantum-dot cellular automata devices: Experimental studies Proceedings of the Ieee Conference On Nanotechnology. 2001: 425-430. DOI: 10.1109/NANO.2001.966460  0.34
2001 Orlov AO, Kummamuru RK, Ramasubramaniam R, Toth G, Lent CS, Bernstein GH, Snider GL. Experimental demonstration of a latch in clocked quantum-dot cellular automata Applied Physics Letters. 78: 1625-1627. DOI: 10.1063/1.1355008  0.842
2000 Kuznetsov VV, Mendez EE, Zuo X, Snider GL, Croke ET. Partially suppressed shot noise in hopping conduction: observation in SiGe quantum wells Physical Review Letters. 85: 397-400. PMID 10991292 DOI: 10.1103/Physrevlett.85.397  0.339
2000 Sparing LM, Mintairov AM, Hodak JH, Martini IB, Hartland GV, Bindley U, Lee S, Furdyna JK, Merz JL, Snider GL. Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells Journal of Applied Physics. 87: 3063-3067. DOI: 10.1063/1.372300  0.371
2000 Amlani I, Orlov AO, Kummamuru RK, Bernstein GH, Lent CS, Snider GL. Experimental demonstration of a leadless quantum-dot cellular automata cell Applied Physics Letters. 77: 738-740. DOI: 10.1063/1.127103  0.821
2000 Orlov AO, Amlani I, Kummamuru RK, Ramasubramaniam R, Toth G, Lent CS, Bernstein GH, Snider GL. Experimental demonstration of clocked single-electron switching in quantum-dot cellular automata Applied Physics Letters. 77: 295-297. DOI: 10.1063/1.126955  0.844
2000 DeMelo C, Hall D, Snider G, Xu D, Kramer G, El-Zein N. High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator Electronics Letters. 36: 84. DOI: 10.1049/EL:20000026  0.314
1999 Amlani I, Orlov AO, Toth G, Bernstein GH, Lent CS, Snider GL. Digital logic gate using quantum-Dot cellular automata Science (New York, N.Y.). 284: 289-91. PMID 10195887 DOI: 10.1126/Science.284.5412.289  0.529
1999 Snider GL, Orlov AO, Amlani I, Bernstein GH, Lent CS, Merz JL, Porod W. Quantum-dot cellular automata: Line and majority logic gate Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38: 7227-7229. DOI: 10.1143/Jjap.38.7227  0.502
1999 Tóth G, Orlov AO, Amlani I, Lent CS, Bernstein GH, Snider GL. Conductance suppression due to correlated electron transport in coupled double quantum dots Physical Review B - Condensed Matter and Materials Physics. 60: 16906-16912. DOI: 10.1103/Physrevb.60.16906  0.514
1999 Bernstein GH, Amlani I, Orlov AO, Lent CS, Snider GL. Observation of switching in a quantum-dot cellular automata cell Nanotechnology. 10: 166-173. DOI: 10.1088/0957-4484/10/2/311  0.5
1999 Porod W, Lent CS, Bernstein GH, Orlov AO, Amlani I, Snider GL, Merz JL. Quantum-dot cellular automata: Computing with coupled quantum dots International Journal of Electronics. 86: 549-590. DOI: 10.1080/002072199133265  0.513
1999 Snider GL, Orlov AO, Amlani I, Zuo X, Bernstein GH, Lent CS, Merz JL, Porod W. Quantum-dot cellular automata: Review and recent experiments (invited) Journal of Applied Physics. 85: 4283-4285. DOI: 10.1063/1.370344  0.389
1999 Orlov AO, Amlani I, Toth G, Lent CS, Bernstein GH, Snider GL. Experimental demonstration of a binary wire for quantum-dot cellular automata Applied Physics Letters. 74: 2875-2877. DOI: 10.1063/1.124043  0.46
1999 Gaska R, Shur MS, Bykhovski AD, Orlov AO, Snider GL. Electron mobility in modulation-doped AlGaN-GaN heterostructures Applied Physics Letters. 74: 287-289. DOI: 10.1063/1.123001  0.399
1999 Amlani I, Orlov AO, Snider GL, Lent CS, Porod W, Bernstein GH. Experimental demonstration of electron switching in a quantum-dot cellular automata (QCA) cell Superlattices and Microstructures. 25: 273-278. DOI: 10.1006/Spmi.1998.0647  0.486
1998 Gaska R, Shur MS, Yang JW, Osinsky A, Orlov AO, Snider GL. Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates Materials Science Forum. 1445-1448. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1445  0.318
1998 Amlani I, Orlov AO, Snider GL, Lent CS, Bernstein GH. Demonstration of a functional quantum-dot cellular automata cell Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3795-3799. DOI: 10.1116/1.590410  0.5
1998 Snider GL, Orlov AO, Amlani I, Bernstein GH, Lent CS, Merz JL, Porod W. Experimental demonstration of quantum-dot cellular automata Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/038  0.485
1998 Orlov AO, Amlani I, Toth G, Lent CS, Bernstein GH, Snider GL. Correlated electron transport in coupled metal double dots Applied Physics Letters. 73: 2787-2789. DOI: 10.1063/1.122591  0.524
1998 Amlani I, Orlov AO, Snider GL, Lent CS, Bernstein GH. Demonstration of a six-dot quantum cellular automata system Applied Physics Letters. 72: 2179-2181. DOI: 10.1063/1.121314  0.526
1998 Gaska R, Yang JW, Osinsky A, Chen Q, Khan MA, Orlov AO, Snider GL, Shur MS. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Applied Physics Letters. 72: 707-709. DOI: 10.1063/1.120852  0.395
1998 Snider GL, Orlov AO, Amlani I, Bernstein GH, Lent CS, Merz JL, Porod W. A functional cell for quantum-dot cellular automata Solid-State Electronics. 42: 1355-1359. DOI: 10.1016/S0038-1101(98)00030-6  0.484
1997 Orlov AO, Amlani I, Bernstein GH, Lent CS, Snider GL. Realization of a functional cell for quantum-dot cellular automata Science. 277: 928-930. DOI: 10.1126/Science.277.5328.928  0.56
1997 Amlani I, Orlov AO, Snider GL, Bernstein GH. Differential charge detection for quantum-dot cellular automata Journal of Vacuum Science & Technology B. 15: 2832-2835. DOI: 10.1116/1.589738  0.502
1997 Sparing LM, Wang PD, Mintairov AM, Lee SH, Bindley U, Chen CH, Shi SS, Furdyna JK, Merz JL, Snider GL. Ion induced damage in strained CdZnSe/ZnSe quantum well structures Journal of Vacuum Science & Technology B. 15: 2652-2655. DOI: 10.1116/1.589702  0.33
1997 Amlani I, Orlov AO, Snider GL, Lent CS, Bernstein GH. External charge state detection of a double-dot system Applied Physics Letters. 71: 1730-1732. DOI: 10.1063/1.120018  0.538
1996 Sparing LM, Wang PD, Xin SH, Short SW, Shi SS, Furdyna JK, Merz JL, Snider GL. Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structures Journal of Vacuum Science & Technology B. 14: 3654-3657. DOI: 10.1116/1.588744  0.344
1996 Bazán G, Orlov AO, Snider GL, Bernstein GH. Charge detector realization for AlGaAs/GaAs quantum‐dot cellular automata Journal of Vacuum Science & Technology B. 14: 4046-4050. DOI: 10.1116/1.588641  0.5
1996 Bernstein GH, Bazan G, Chen M, Lent CS, Merz JL, Orlov AO, Porod W, Snider GL, Tougaw PD. Practical issues in the realization of quantum-dot cellular automata Superlattices and Microstructures. 20: 457-459. DOI: 10.1006/Spmi.1996.0102  0.466
1994 Snider GL, Then AM, Soave RJ, Tasker GW. High aspect ratio dry etching for microchannel plates Journal of Vacuum Science & Technology B. 12: 3327-3331. DOI: 10.1116/1.587621  0.349
1991 Dagli N, Snider G, Waldman J, Hu E. An electron wave directional coupler and its analysis Journal of Applied Physics. 69: 1047-1051. DOI: 10.1063/1.347370  0.446
1991 Snider GL, Miller MS, Rooks MJ, Hu EL. Quantized conductance in ballistic constrictions at 30 K Applied Physics Letters. 59: 2727-2729. DOI: 10.1063/1.105897  0.311
1991 Tan I, Snider GL, Hu EL. Fabry-Perot analysis of resonant tunneling structures Superlattices and Microstructures. 10: 67-72. DOI: 10.1016/0749-6036(91)90150-P  0.363
1990 Snider GL, Tan I, Hu EL. Large subband spacings in δ‐doped quantum wires Journal of Applied Physics. 68: 5922-5924. DOI: 10.1063/1.346920  0.401
1990 Snider GL, Tan I, Hu EL. Electron states in mesa‐etched one‐dimensional quantum well wires Journal of Applied Physics. 68: 2849-2853. DOI: 10.1063/1.346443  0.456
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