| Year |
Citation |
Score |
| 2020 |
Straker M, Chauhan A, Sinha M, Phelan WA, Chandrashekhar M, Hemker KJ, Marvel C, Spencer M. Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method Journal of Crystal Growth. 543: 125700. DOI: 10.1016/J.Jcrysgro.2020.125700 |
0.578 |
|
| 2018 |
Chatzakis I, Krishna A, Culbertson J, Sharac N, Giles AJ, Spencer MG, Caldwell JD. Strong confinement of optical fields using localized surface phonon polaritons in cubic boron nitride. Optics Letters. 43: 2177-2180. PMID 29714783 DOI: 10.1364/Ol.43.002177 |
0.334 |
|
| 2017 |
Ji Y, Calderon B, Han Y, Cueva P, Jungwirth NR, Alsalman HA, Hwang J, Fuchs GD, Muller DA, Spencer MG. Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking. Acs Nano. PMID 29099576 DOI: 10.1021/Acsnano.7B04841 |
0.559 |
|
| 2016 |
Jungwirth NR, Calderon B, Ji Y, Spencer MG, Flatte ME, Fuchs GD. Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride. Nano Letters. PMID 27580074 DOI: 10.1021/Acs.Nanolett.6B01987 |
0.308 |
|
| 2016 |
Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection. Journal of Nanoscience and Nanotechnology. 16: 144-51. PMID 27398439 DOI: 10.1166/Jnn.2016.12042 |
0.78 |
|
| 2016 |
Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface functionalized graphene biosensor on sapphire for cancer cell detection Journal of Nanoscience and Nanotechnology. 16: 144-151. DOI: 10.1166/jnn.2016.12042 |
0.552 |
|
| 2016 |
Kwak JY, Hwang J, Calderon B, Alsalman H, Spencer MG. Long wavelength optical response of graphene-MoS2 heterojunction Applied Physics Letters. 108. DOI: 10.1063/1.4943169 |
0.609 |
|
| 2016 |
Thomas C, Portnoff S, Spencer MG. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes Applied Physics Letters. 108. DOI: 10.1063/1.4939203 |
0.338 |
|
| 2014 |
Kwak JY, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer MG. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts. Nano Letters. 14: 4511-6. PMID 24978093 DOI: 10.1021/Nl5015316 |
0.623 |
|
| 2014 |
Hwang J, Kim M, Cha HY, Spencer MG, Lee JW. Metal free growth of graphene on quartz substrate using chemical vapor deposition (CVD). Journal of Nanoscience and Nanotechnology. 14: 2979-83. PMID 24734720 DOI: 10.1166/Jnn.2014.8583 |
0.714 |
|
| 2014 |
Gorantla S, Bachmatiuk A, Hwang J, Alsalman HA, Kwak JY, Seyller T, Eckert J, Spencer MG, Rümmeli MH. A universal transfer route for graphene. Nanoscale. 6: 889-96. PMID 24270801 DOI: 10.1039/C3Nr04739C |
0.528 |
|
| 2014 |
Hwang J, Calderon BR, Alsalman HA, Kwak JY, Kim M, Spencer MG. Growth of 2D heterostructures of graphene/BN Proceedings of Spie. 9083. DOI: 10.1117/12.2053442 |
0.587 |
|
| 2013 |
Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF, Johnston-Halperin E, Kuno M, Plashnitsa VV, Robinson RD, Ruoff RS, ... ... Spencer MG, et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. Acs Nano. 7: 2898-926. PMID 23464873 DOI: 10.1021/Nn400280C |
0.366 |
|
| 2013 |
Hwang J, Kim M, Campbell D, Alsalman HA, Kwak JY, Shivaraman S, Woll AR, Singh AK, Hennig RG, Gorantla S, Rümmeli MH, Spencer MG. van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst. Acs Nano. 7: 385-95. PMID 23244231 DOI: 10.1021/Nn305486X |
0.812 |
|
| 2013 |
Shivaraman S, Jobst J, Waldmann D, Weber HB, Spencer MG. Publisher's Note: Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer [Phys. Rev. B87, 195425 (2013)] Physical Review B. 87. DOI: 10.1103/Physrevb.87.199906 |
0.772 |
|
| 2013 |
Shivaraman S, Jobst J, Waldmann D, Weber HB, Spencer MG. Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer Physical Review B. 87. DOI: 10.1103/Physrevb.87.195425 |
0.778 |
|
| 2013 |
Singh AK, Uddin MA, Tolson JT, Maire-Afeli H, Sbrockey N, Tompa GS, Spencer MG, Vogt T, Sudarshan TS, Koley G. Electrically tunable molecular doping of graphene Applied Physics Letters. 102. DOI: 10.1063/1.4789509 |
0.651 |
|
| 2013 |
Hwang J, Kim M, Shields VB, Spencer MG. CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC Journal of Crystal Growth. 366: 26-30. DOI: 10.1016/J.Jcrysgro.2012.12.136 |
0.565 |
|
| 2013 |
Ardaravi?ius L, Liberis J, Šermukšnis E, Matulionis A, Hwang J, Kwak JY, Campbell D, Alsalman HA, Eastman LF, Spencer MG. High frequency noise of epitaxial graphene grown on sapphire Physica Status Solidi - Rapid Research Letters. 7: 348-351. DOI: 10.1002/Pssr.201307074 |
0.691 |
|
| 2012 |
Kim M, Hwang J, Lepak LA, Lee JW, Spencer MG, Tiwari S. Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer. Nanotechnology. 23: 335202. PMID 22842470 DOI: 10.1088/0957-4484/23/33/335202 |
0.729 |
|
| 2012 |
Kim M, Hwang J, Shields VB, Tiwari S, Spencer MG, Lee JW. SiC surface orientation and Si loss rate effects on epitaxial graphene. Nanoscale Research Letters. 7: 186. PMID 22410299 DOI: 10.1186/1556-276X-7-186 |
0.722 |
|
| 2012 |
Gallo EM, Willner BI, Hwang J, Sun S, Spencer M, Salgaj T, Mitchel WC, Sbrockey N, Tompa GS. Chemical vapor deposition of graphene on copper at reduced temperatures Proceedings of Spie - the International Society For Optical Engineering. 8462. DOI: 10.1117/12.929094 |
0.602 |
|
| 2012 |
Spencer M, Singh A, Uddin MA, Nomani MWK, Tompa G, Sbrockey N, Tolson J, Shields V, Hwang J, Koley G. Graphene on different substrates for sensing applications Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322236 |
0.616 |
|
| 2012 |
Shivaraman S, Herman LH, Rana F, Park J, Spencer MG. Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide Applied Physics Letters. 100. DOI: 10.1063/1.4711769 |
0.796 |
|
| 2012 |
Nomani MWK, Shields V, Tompa G, Sbrockey N, Spencer MG, Webb RA, Koley G. Correlated conductivity and work function changes in epitaxial graphene Applied Physics Letters. 100. DOI: 10.1063/1.3691628 |
0.647 |
|
| 2011 |
Strait JH, Wang H, Shivaraman S, Shields V, Spencer M, Rana F. Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy. Nano Letters. 11: 4902-6. PMID 21973122 DOI: 10.1021/Nl202800H |
0.78 |
|
| 2011 |
Colson JW, Woll AR, Mukherjee A, Levendorf MP, Spitler EL, Shields VB, Spencer MG, Park J, Dichtel WR. Oriented 2D covalent organic framework thin films on single-layer graphene. Science (New York, N.Y.). 332: 228-31. PMID 21474758 DOI: 10.1126/Science.1202747 |
0.374 |
|
| 2011 |
Nomani MWK, Singh A, Shields V, Spencer M, Tompa G, Sbrockey N, Koley G. Work function and conductivity changes due to molecular adsorption in epitaxial graphene on 6H-SiC Proceedings of the Ieee Conference On Nanotechnology. 1317-1321. DOI: 10.1109/NANO.2011.6144426 |
0.62 |
|
| 2011 |
Thomas T, Guo X, Shi J, Lepak LA, Chandrashekhar MVS, Li K, Disalvo FJ, Spencer MG. Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Journal of Crystal Growth. 316: 90-96. DOI: 10.1016/J.Jcrysgro.2010.12.059 |
0.733 |
|
| 2011 |
Strait J, Wang H, Shivaraman S, Shields V, Spencer M, Rana F. Very slow carrier cooling in graphene measured by optical/THz pump-probe spectroscopy Optics Infobase Conference Papers. |
0.766 |
|
| 2010 |
Hwang J, Shields VB, Thomas CI, Shivaraman S, Hao D, Kim M, Woll AR, Tompa GS, Spencer MG. Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD). Journal of Crystal Growth. 312: 3219-3224. PMID 20976026 DOI: 10.1016/J.Jcrysgro.2010.07.046 |
0.795 |
|
| 2010 |
Jiang X, Spencer MG. Electrochemical impedance biosensor with electrode pixels for precise counting of CD4+ cells: a microchip for quantitative diagnosis of HIV infection status of AIDS patients. Biosensors & Bioelectronics. 25: 1622-8. PMID 20047827 DOI: 10.1016/J.Bios.2009.11.024 |
0.561 |
|
| 2010 |
Qazi M, Nomani MWK, Chandrashekhar MVS, Shields VB, Spencer MG, Koley G. Molecular adsorption behavior of epitaxial graphene grown on 6H-SiC faces Applied Physics Express. 3. DOI: 10.1143/Apex.3.075101 |
0.796 |
|
| 2010 |
Wang H, Strait JH, George PA, Shivaraman S, Shields VB, Chandrashekhar M, Hwang J, Rana F, Spencer MG, Ruiz-Vargas CS, Park J. Ultrafast relaxation dynamics of hot optical phonons in graphene Applied Physics Letters. 96. DOI: 10.1063/1.3291615 |
0.801 |
|
| 2010 |
Nomani MWK, Shishir R, Qazi M, Diwan D, Shields VB, Spencer MG, Tompa GS, Sbrockey NM, Koley G. Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC Sensors and Actuators, B: Chemical. 150: 301-307. DOI: 10.1016/J.Snb.2010.06.069 |
0.743 |
|
| 2010 |
Jadwisienczak W, Wisniewski K, Spencer M, Thomas T, Ingram D. Optical properties, luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor Radiation Measurements. 45: 500-502. DOI: 10.1016/J.Radmeas.2009.12.016 |
0.593 |
|
| 2010 |
Wang H, Strait JH, Shivaraman S, Besant JD, Shield VB, Spencer MG, Rana F. Ultrafast measurements of thermal transport in graphene Optics Infobase Conference Papers. |
0.748 |
|
| 2009 |
Shivaraman S, Barton RA, Yu X, Alden J, Herman L, Chandrashekhar M, Park J, McEuen PL, Parpia JM, Craighead HG, Spencer MG. Free-standing epitaxial graphene. Nano Letters. 9: 3100-5. PMID 19663456 DOI: 10.1021/Nl900479G |
0.802 |
|
| 2009 |
Guo X, Thomas T, Li KK, Qi J, Wang Y, Chen X, Zhang J, Spencer MG, Zhao H, Zou YK, Jiang H, Di Bartolo B. Size Reduction and Rare Earth Doping of GaN Powders through Ball Milling Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-12 |
0.572 |
|
| 2009 |
Rana F, George PA, Strait JH, Dawlaty J, Shivaraman S, Chandrashekhar M, Spencer MG. Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115447 |
0.79 |
|
| 2009 |
Strait JH, George PA, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Emission of terahertz radiation from SiC Applied Physics Letters. 95. DOI: 10.1063/1.3194152 |
0.766 |
|
| 2009 |
Lu J, Thomas CI, Chandrashekhar MVS, Spencer MG. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method Journal of Applied Physics. 105. DOI: 10.1063/1.3130398 |
0.714 |
|
| 2009 |
Lu J, Chandrashekhar MVS, Parks JJ, Ralph DC, Spencer MG. Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure Applied Physics Letters. 94. DOI: 10.1063/1.3126447 |
0.607 |
|
| 2009 |
Wisniewski K, Jadwisieńczak W, Thomas T, Spencer M. High pressure luminescence studies of europium doped GaN Journal of Rare Earths. 27: 667-670. DOI: 10.1016/S1002-0721(08)60312-9 |
0.567 |
|
| 2009 |
Thomas T, Guo X, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li K, DiSalvo FJ, Lipson M, Spencer MG. Purification and mechanical nanosizing of Eu-doped GaN Journal of Crystal Growth. 311: 4402-4407. DOI: 10.1016/J.Jcrysgro.2009.07.028 |
0.695 |
|
| 2009 |
Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/S11664-009-0803-6 |
0.81 |
|
| 2009 |
Thomas T, Chandrashekhar MVS, Poitras CB, Shi J, Reiherzer JC, DiSalvo FJ, Lipson M, Spencer MG. Photoluminescence enhancement in Eu doped GaN powder by oxidative passivation of the surface Materials Research Society Symposium Proceedings. 1111: 91-96. |
0.681 |
|
| 2008 |
George PA, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. Nano Letters. 8: 4248-51. PMID 19367881 DOI: 10.1021/Nl8019399 |
0.806 |
|
| 2008 |
Dawlaty JM, Shivaraman S, Strait J, George P, Chandrashekhar M, Rana F, Spencer MG, Veksler D, Chen Y. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible Applied Physics Letters. 93. DOI: 10.1063/1.2990753 |
0.795 |
|
| 2008 |
Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of ultrafast carrier dynamics in epitaxial graphene Applied Physics Letters. 92. DOI: 10.1063/1.2837539 |
0.811 |
|
| 2008 |
Shi J, Chandrashekhar MVS, Reiherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG. Effect of growth temperature on Eu incorporation in GaN powders Journal of Crystal Growth. 310: 452-456. DOI: 10.1016/J.Jcrysgro.2007.10.020 |
0.602 |
|
| 2008 |
Jiang X, Mishra N, Turner JN, Spencer MG. Diffusivity of sub-1,000 Da molecules in 40 nm silicon-based alumina pores Microfluidics and Nanofluidics. 5: 695-701. DOI: 10.1007/S10404-008-0300-X |
0.581 |
|
| 2008 |
Koley G, Chandrashekhar MVS, Thomas CI, Spencer MG. Polarization in wide bandgap semiconductors and their characterization by scanning probe microscopy Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 265-305. DOI: 10.1007/978-0-387-68319-5_6 |
0.721 |
|
| 2008 |
Shi J, Choi YC, Pophristic M, Spencer MG, Eastman LF. High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2013-2015. DOI: 10.1002/Pssc.200778691 |
0.528 |
|
| 2008 |
Shi J, Chandrashekhar MVS, Reiherzer J, Schaff W, Lu J, Disalvo F, Spencer M. High intensity red emission from Eu doped GaN powders Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1495-1498. DOI: 10.1002/Pssc.200778413 |
0.614 |
|
| 2008 |
Dawlaty JM, Shivaraman S, Chandrashekhar M, Spencer MG, Rana F. Measurement of ultrafast carrier dynamics in epitaxial graphene Materials Research Society Symposium Proceedings. 1081: 138-143. |
0.779 |
|
| 2007 |
Aslan B, Eastman LF, Schaff WJ, Chen X, Spencer MG, Cha HOY, Dyson A, Ridley BK. Ballistic electron acceleration negative-differantial-conductivity devices International Journal of High Speed Electronics and Systems. 17: 173-176. DOI: 10.1142/S012915640600376X |
0.73 |
|
| 2007 |
Choi YC, Shi J, Pophristic M, Spencer MG, Eastman LF. C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1836-1841. DOI: 10.1116/1.2794058 |
0.64 |
|
| 2007 |
Choi YC, Pophristic M, Peres B, Cha HY, Spencer MG, Eastman LF. High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance Semiconductor Science and Technology. 22: 517-521. DOI: 10.1088/0268-1242/22/5/010 |
0.555 |
|
| 2007 |
Chandrashekhar MVS, Duggirala R, Spencer MG, Lal A. 4H SiC betavoltaic powered temperature transducer Applied Physics Letters. 91. DOI: 10.1063/1.2767780 |
0.589 |
|
| 2007 |
Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction Applied Physics Letters. 91. DOI: 10.1063/1.2754650 |
0.725 |
|
| 2007 |
Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face Applied Physics Letters. 90. DOI: 10.1063/1.2730738 |
0.728 |
|
| 2007 |
Dyson A, Ridley BK, Aslan B, Cha HY, Chen X, Schaff WJ, Spencer MG, Eastman LF. GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530. DOI: 10.1002/pssc.200673213 |
0.604 |
|
| 2007 |
Dyson A, Ridley BK, Aslan B, Cha HY, Chen X, Schaff WJ, Spencer MG, Eastman LF. GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530. DOI: 10.1002/Pssc.200673213 |
0.65 |
|
| 2006 |
Yesinowski JP, Purdy AP, Wu H, Spencer MG, Hunting J, DiSalvo FJ. Distributions of conduction electrons as manifested in MAS NMR of gallium nitride. Journal of the American Chemical Society. 128: 4952-3. PMID 16608319 DOI: 10.1021/Ja0604865 |
0.583 |
|
| 2006 |
Chandrashekhar MVS, Thomas CI, Li H, Spencer MG, Lal A. Demonstration of a 4H SiC betavoltaic cell Applied Physics Letters. 88: 1-3. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1351 |
0.71 |
|
| 2006 |
Choi YC, Cha HY, Eastman LF, Spencer MG. Design considerations of a new 4H-SiC enhancement-mode latera channel vertical JFET for low-loss switching operation Materials Science Forum. 527: 1199-1202. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1199 |
0.586 |
|
| 2006 |
Eastman LF, Schaff WJ, Cha HY, Chen XD, Spencer MG, Ridley BK. Ballistic electron acceleration negative-differential-conductivity devices International Journal of High Speed Electronics and Systems. 16: 437-441. DOI: 10.1142/S012915640600376X |
0.386 |
|
| 2006 |
Choi YC, Pophristic M, Peres B, Spencer MG, Eastman LF. Fabrication and characterization of high breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2601-2605. DOI: 10.1116/1.2366542 |
0.556 |
|
| 2006 |
Choi YC, Pophristic M, Cha HY, Peres B, Spencer MG, Eastman LF. The effect of an Fe-doped GaN buffer on OFF-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate Ieee Transactions On Electron Devices. 53: 2926-2931. DOI: 10.1109/Ted.2006.885679 |
0.682 |
|
| 2006 |
Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018 |
0.798 |
|
| 2006 |
Yang Z, Spencer MG. Surface potential shield with aperture structure to improve potential measurement accuracy of scanning Kelvin probe microscopy Applied Physics Letters. 89: 263504. DOI: 10.1063/1.2424281 |
0.613 |
|
| 2006 |
Poitras CB, Wu H, Turner AC, Spencer MG, Lipson M. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder Applied Physics Letters. 89. DOI: 10.1063/1.2338894 |
0.578 |
|
| 2006 |
Chandrashekhar MVS, Thomas CI, Spencer MG. Measurement of the mean electron-hole pair ionization energy in 4H SiC Applied Physics Letters. 89. DOI: 10.1063/1.2243799 |
0.702 |
|
| 2006 |
Cha H, Wu H, Chae S, Spencer MG. Gallium nitride nanowire nonvolatile memory device Journal of Applied Physics. 100: 024307. DOI: 10.1063/1.2216488 |
0.716 |
|
| 2006 |
Wu H, Poitras CB, Lipson M, Spencer MG, Hunting J, DiSalvo FJ. Photoluminescence and cathodoluminescence analyses of GaN powder doped with Eu Applied Physics Letters. 88: 011921. DOI: 10.1063/1.2162667 |
0.587 |
|
| 2006 |
Raghothamachar B, Bai J, Dudley M, Dalmau R, Zhuang D, Herro Z, Schlesser R, Sitar Z, Wang B, Callahan M, Rakes K, Konkapaka P, Spencer M. Characterization of bulk grown GaN and AlN single crystal materials Journal of Crystal Growth. 287: 349-353. DOI: 10.1016/J.Jcrysgro.2005.11.042 |
0.319 |
|
| 2006 |
Konkapaka P, Raghothamachar B, Dudley M, Makarov Y, Spencer MG. Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique Journal of Crystal Growth. 289: 140-144. DOI: 10.1016/J.Jcrysgro.2005.11.005 |
0.341 |
|
| 2006 |
Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/S11664-006-0118-9 |
0.777 |
|
| 2006 |
Cha HOY, Chen X, Wu H, Schaff WJ, Spencer MG, Eastman LF. Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures Journal of Electronic Materials. 35: 406-410. DOI: 10.1007/Bf02690526 |
0.709 |
|
| 2005 |
Cha HY, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O. Important role of parasitic regions in electrical characteristics of SiC MESFETs Materials Science Forum. 483: 861-864. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.861 |
0.488 |
|
| 2005 |
Wu H, Bourlinos A, Giannelis EP, Spencer MG. High quality, low cost continuous poly-GaN film on Si and glass substrates produced by spin coating Materials Research Society Symposium Proceedings. 831: 393-398. DOI: 10.1557/Proc-831-E8.2 |
0.55 |
|
| 2005 |
Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-07 |
0.573 |
|
| 2005 |
Wu H, Spinelli J, Konkapaka P, Spencer M. Rapid growth of bulk GaN crystal using GaN powder as source material Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-01 |
0.556 |
|
| 2005 |
Koley G, Lakshmanan L, Tipirneni N, Gaevski M, Koudymov A, Simin G, Cha HY, Spencer MG, Khan A. Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L1348 |
0.719 |
|
| 2005 |
Choi YC, Cha HY, Eastman LF, Spencer MG. A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: Source inserted double-gate structure with a supplementary highly doped region Ieee Transactions On Electron Devices. 52: 1940-1948. DOI: 10.1109/Ted.2005.854278 |
0.656 |
|
| 2005 |
Choi YC, Cha HY, Eastman LF, Spencer MG. Design optimization of 600 V SiC SITs for high power and high frequency operation Semiconductor Science and Technology. 20: 193-201. DOI: 10.1088/0268-1242/20/2/017 |
0.646 |
|
| 2005 |
Vitusevich SA, Petrychuk MV, Kurakin AM, Danylyuk SV, Belyaev AE, Cha HY, Spencer MG, Eastman LF, Klein N. Influence of small doses of gamma irradiation on transport and noise properties of SiC MESFETs Aip Conference Proceedings. 780: 713-716. DOI: 10.1063/1.2036850 |
0.341 |
|
| 2005 |
Wu H, Poitras CB, Lipson M, Spencer MG, Hunting J, DiSalvo FJ. Green emission from Er-doped GaN powder Applied Physics Letters. 86: 191918. DOI: 10.1063/1.1923175 |
0.55 |
|
| 2005 |
Ardaravi?ius L, Matulionis A, Kiprijanovic O, Liberis J, Cha HY, Eastman LF, Spencer MG. Hot-electron transport in 4H-SiC Applied Physics Letters. 86: 022107-1-022107-3. DOI: 10.1063/1.1851001 |
0.493 |
|
| 2005 |
Koley G, Spencer MG. On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface Applied Physics Letters. 86. DOI: 10.1063/1.1850600 |
0.584 |
|
| 2005 |
Wu H, Hunting J, Uheda K, Lepak L, Konkapaka P, DiSalvo FJ, Spencer MG. Rapid synthesis of gallium nitride powder Journal of Crystal Growth. 279: 303-310. DOI: 10.1016/J.Jcrysgro.2005.02.040 |
0.575 |
|
| 2005 |
Cha H, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O. Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 34: 330-335. DOI: 10.1007/S11664-005-0105-6 |
0.382 |
|
| 2005 |
Cha HOY, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O. Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 34: 330-335. DOI: 10.1007/S11664-005-0105-6 |
0.656 |
|
| 2005 |
Wu H, Hunting J, DiSalvo FJ, Spencer MG. Rapid synthesis of high purity GaN powder Physica Status Solidi (C). 2: 2074-2078. DOI: 10.1002/Pssc.200461570 |
0.563 |
|
| 2005 |
Wu H, Konkapaka P, Makarov Y, Spencer MG. Bulk GaN growth by Gallium Vapor Transport technique Physica Status Solidi C: Conferences. 2: 2032-2035. DOI: 10.1002/Pssc.200461553 |
0.579 |
|
| 2004 |
Yang Z, Spencer MG. Improve the Accuracy of Scanning Kelvin Probe Microscopy by Eliminating the Cantilever Effect Mrs Proceedings. 838. DOI: 10.1557/Proc-838-O11.7 |
0.623 |
|
| 2004 |
Raghothamachar B, Dudley M, Wang B, Callahan M, Bliss D, Konkapaka P, Wu H, Spencer M. X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E8.23 |
0.553 |
|
| 2004 |
Konkapaka P, Wu H, Makarov Y, Spencer MG. Growth and Characterization of bulk GaN by Ga Vapor Transport Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.33 |
0.613 |
|
| 2004 |
Matulionis A, Liberia J, Matulioniene I, Cha HY, Eastman LF, Spencer MG. Hot-phonon temperature and lifetime in biased 4H-SiC Journal of Applied Physics. 96: 6439-6444. DOI: 10.1063/1.1812598 |
0.503 |
|
| 2004 |
Koley G, Cha HY, Hwang J, Schaff WJ, Eastman LF, Spencer MG. Perturbation of charges in AIGaN/GaN heterostructures by ultraviolet laser illumination Journal of Applied Physics. 96: 4253-4262. DOI: 10.1063/1.1794892 |
0.775 |
|
| 2004 |
Cha HY, Choi YC, Eastman LF, Spencer MG. Analytical cascode model of buried-gate SiC MESFETs Electronics Letters. 40: 271-273. DOI: 10.1049/El:20040169 |
0.482 |
|
| 2004 |
Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG. Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs Solid-State Electronics. 48: 1233-1237. DOI: 10.1016/J.Sse.2004.01.005 |
0.652 |
|
| 2004 |
Kubovic M, Kasu M, Kallfass I, Neuburger M, Aleksov A, Koley G, Spencer MG, Kohn E. Microwave performance evaluation of diamond surface channel FETs Diamond and Related Materials. 13: 802-807. DOI: 10.1016/J.Diamond.2003.11.089 |
0.595 |
|
| 2004 |
Cha H, Choi YC, Thompson RM, Kaper V, Shealy JR, Eastman LF, Spencer MG. Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors Journal of Electronic Materials. 33: 908-911. DOI: 10.1007/S11664-004-0219-2 |
0.409 |
|
| 2004 |
Cha HY, Choi YC, Thompson RM, Kaper V, Shealy JR, Eastman LF, Spencer MG. Influence of Si 3N 4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors Journal of Electronic Materials. 33: 908-911. DOI: 10.1007/S11664-004-0219-2 |
0.746 |
|
| 2003 |
Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Passivation effect on channel recessed 4H-SiC MESFETs Materials Science Forum. 433: 749-752. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.749 |
0.71 |
|
| 2003 |
Barrios CA, Thomas CI, Spencer M, Lipson M. 3C-SiC modulator for high-speed integrated photonics Mrs Proceedings. 799. DOI: 10.1557/Proc-799-Z5.12 |
0.583 |
|
| 2003 |
Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs Ieee Transactions On Electron Devices. 50: 1569-1574. DOI: 10.1109/Ted.2003.814982 |
0.795 |
|
| 2003 |
Koley G, Tilak V, Eastman LF, Spencer MG. Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination Ieee Transactions On Electron Devices. 50: 886-893. DOI: 10.1109/Ted.2003.812489 |
0.748 |
|
| 2003 |
Cha HY, Thomas CI, Choi YC, Eastman LF, Spencer MG. Gate field emission induced breakdown in power SiC MESFETs Ieee Electron Device Letters. 24: 571-573. DOI: 10.1109/Led.2003.815422 |
0.737 |
|
| 2003 |
Neuburger M, Daumiller I, Zimmermann T, Kunze M, Koley G, Spencer MG, Dadgar A, Krtschil A, Krost A, Kohn E. Surface stability of InGaN-channel based HFETs Electronics Letters. 39: 1614-1616. DOI: 10.1049/El:20030974 |
0.611 |
|
| 2003 |
Koley G, Kim H, Eastman LF, Spencer MG. Electrical bias stress related degradation of AlGaN/GaN HEMTs Electronics Letters. 39: 1217-1218. DOI: 10.1049/El:20030773 |
0.706 |
|
| 2003 |
Eshun EE, Spencer MG, Griffin J, Zhou P, Harris GL. Study of SiC polytype heterojunctions Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 98: 65-69. DOI: 10.1016/S0921-5107(02)00570-6 |
0.379 |
|
| 2002 |
Cha H, Thomas CI, Koley G, Eastman LF, Spencer MG. The Effect of Channel Recess and Passivation on 4H-SiC MESFETs Mrs Proceedings. 742. DOI: 10.1557/PROC-742-K5.19 |
0.722 |
|
| 2002 |
Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. The effect of channel recess and passivation on 4H-SiC MESFETs Materials Research Society Symposium - Proceedings. 742: 283-288. DOI: 10.1557/Proc-742-K5.19 |
0.763 |
|
| 2002 |
Spencer M, Palmour J, Carter C. Substrate and epitaxial issues for SiC power devices Ieee Transactions On Electron Devices. 49: 940-945. DOI: 10.1109/16.998608 |
0.351 |
|
| 2002 |
Koley G, Cha HY, Thomas CI, Spencer MG. Laser-induced surface potential transients observed in III-nitride heterostructures Applied Physics Letters. 81: 2282-2284. DOI: 10.1063/1.1506416 |
0.775 |
|
| 2002 |
Sarney WL, Wood MC, Salamanca-Riba L, Zhou P, Spencer M. Role of Ge on film quality of SiC grown on Si Journal of Applied Physics. 91: 668-671. DOI: 10.1063/1.1425433 |
0.331 |
|
| 2002 |
Jones KA, Derenge MA, Shah PB, Zheleva TS, Ervin MH, Kirchner KW, Wood MC, Thomas C, Spencer MG, Holland OW, Vispute RD. A comparison of graphite and AlN caps used for annealing ion-implanted SiC Journal of Electronic Materials. 31: 568-575. DOI: 10.1007/S11664-002-0127-2 |
0.313 |
|
| 2002 |
Koley G, Cha HY, Tilak V, Eastman LF, Spencer MG. Modulation of surface barrier in AlGaN/GaN heterostructures Physica Status Solidi (B) Basic Research. 234: 734-737. DOI: 10.1002/1521-3951(200212)234:3<734::Aid-Pssb734>3.0.Co;2-C |
0.794 |
|
| 2002 |
Koley G, Tilak V, Cha HY, Eastman LF, Spencer MG. Surface trapping effects observed in AlGAN/GaN HFETs and heterostructures Proceedings Ieee Lester Eastman Conference On High Performance Devices. 470-476. |
0.72 |
|
| 2001 |
Koley G, Spencer MG. Characterization of GaN and Al0.35Ga0.65N/GaN heterostructures by scanning kelvin probe microscopy Materials Research Society Symposium Proceedings. 680: 90-95. DOI: 10.1557/Proc-680-E4.4 |
0.612 |
|
| 2001 |
Koley G, Spencer MG, Bhangale HR. Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy Applied Physics Letters. 79: 545-547. DOI: 10.1063/1.1384004 |
0.581 |
|
| 2001 |
Koley G, Spencer MG. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy Journal of Applied Physics. 90: 337-344. DOI: 10.1063/1.1371941 |
0.625 |
|
| 2001 |
Koley G, Spencer MG. Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 2873-2875. DOI: 10.1063/1.1369390 |
0.6 |
|
| 2001 |
Shen Y, Jacobs DB, Malliaras GG, Koley G, Spencer MG, Ioannidis A. Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes Advanced Materials. 13: 1234. DOI: 10.1002/1521-4095(200108)13:16<1234::AID-ADMA1234>3.0.CO;2-R |
0.495 |
|
| 2000 |
Sarney WL, Salamanca-Riba L, Zhou P, Taylor C, Spencer MG, Vispute RD, Jones KA. The effect of ge on the structureandmorphology of SiC films grown on (111) si substrates Materials Science Forum. 338: 277-280. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.277 |
0.353 |
|
| 2000 |
Sarney WL, Salamanca-Riba L, Hossain T, Zhou P, Jayatirtha HN, Kang HH, Vispute RD, Spencer M, Jones KA. TEM study of bulk AlN growth by physical vapor transport Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004543 |
0.347 |
|
| 2000 |
Goldys EM, Godlewski M, Kaminski E, Piotrowska A, Koley G, Spencer MG, Eastman LF. Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2000: 539-542. DOI: 10.1109/COMMAD.2000.1023006 |
0.625 |
|
| 2000 |
Ervin MH, Jones KA, Derenge MA, Kirchnef KW, Wood MC, Shah PB, Vispute RD, Venkatesan T, Thomas C, Spencer MG. An SEM Investigation of Annealing Encapsulants for SiC Microscopy and Microanalysis. 6: 1094-1095. DOI: 10.1017/S143192760003796X |
0.301 |
|
| 2000 |
Sarney WL, Salamanca-Riba L, Vispute RD, Zhou P, Taylor C, Spencer MG, Jones KA. SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor Journal of Electronic Materials. 29: 359-363. DOI: 10.1007/S11664-000-0077-5 |
0.332 |
|
| 2000 |
Koley G, Smart J, Shealy JR, Spencer MG. Characterization of dislocations and suface potential in III-V nitride heterostructures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 200-206. |
0.7 |
|
| 1999 |
Thomas C, Taylor C, Griffin J, Rose WL, Spencer MG, Capano M, Rendakova S, Kornegay K. Annealing of Ion Implantation Damage in SiC Using a Graphite Mask Mrs Proceedings. 572. DOI: 10.1557/PROC-572-45 |
0.512 |
|
| 1999 |
Thomas C, Taylor C, Griffin J, Rose WL, Spencer MG, Capano M, Rendakova S, Kornegay K. Annealing of ion implantation damage in SiC using a graphite mask Materials Research Society Symposium - Proceedings. 572: 45-50. DOI: 10.1557/Proc-572-45 |
0.562 |
|
| 1999 |
Sarney WL, Salamanca-Riba L, Zhou P, Spencer MG, Taylor C, Sharma RP, Jones KA. Effect of Ge on SiC film morphology in SiC/Si films grown by MOCVD Materials Research Society Symposium - Proceedings. 572: 185-190. DOI: 10.1557/Proc-572-185 |
0.32 |
|
| 1999 |
Eshun E, Taylor C, Spencer MG, Kornegay K, Ferguson I, Gurray A, Stall R. Homo-epitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor Materials Research Society Symposium - Proceedings. 572: 173-178. DOI: 10.1557/Proc-572-173 |
0.307 |
|
| 1999 |
Taylor C, Eshun E, Spencer MG, Hobart KD, Kub FJ. Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer Materials Science and Engineering B-Advanced Functional Solid-State Materials. 583-585. DOI: 10.1016/S0921-5107(98)00479-6 |
0.354 |
|
| 1998 |
Zetterling CM, Östling M, Harris CI, Nordell N, Wongchotigul K, Spencer MG. Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures Materials Science Forum. 877-880. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.877 |
0.366 |
|
| 1998 |
Wilson S, Dickens CS, Griffin J, Spencer MG. Comparative Growth of AIN on Singular and Off-Axis 6H and 4H-SiC by MOCVD Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G3.61 |
0.331 |
|
| 1998 |
Tang X, Yuan Y, Wongchotigul K, Spencer MG, Ying H, Ling Z. Thermo-optic properties of aluminum nitride waveguides High-Power Lasers and Applications. 3283: 938-941. DOI: 10.1117/12.316647 |
0.33 |
|
| 1998 |
Jones KA, Xie K, Eckart DW, Wood MC, Talyansky V, Vispute RD, Venkatesan T, Wongchotigul K, Spencer M. AlN as an encapsulate for annealing SiC Journal of Applied Physics. 83: 8010-8015. DOI: 10.1063/1.367893 |
0.308 |
|
| 1998 |
Vispute RD, Talyansky V, Choopun S, Sharma RP, Venkatesan T, He M, Tang X, Halpern JB, Spencer MG, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices Applied Physics Letters. 73: 348-350. DOI: 10.1063/1.121830 |
0.403 |
|
| 1998 |
Tang X, Hossain F, Wongchotigul K, Spencer MG. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition Applied Physics Letters. 72: 1501-1503. DOI: 10.1063/1.121039 |
0.346 |
|
| 1997 |
Vispute RD, Talyansky V, Chupoon S, Enck R, Dahmas T, Ogale SB, Sharma RP, Venkatesan T, Li YX, Salamanca-Riba LG, Iliadis AA, He M, Tang X, Halpern JB, Spencer MG, et al. Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire Mrs Proceedings. 482. DOI: 10.1557/Proc-482-343 |
0.332 |
|
| 1997 |
Li YX, Salamanca-Riba L, Spencer MG, Wongchigul K, Zhou P, Tang X, Talyansky V, Venkatesan T. Structural characteristics of MOCVD-grown AlN films with different carbon concentration Materials Research Society Symposium - Proceedings. 449: 555-560. DOI: 10.1557/Proc-449-555 |
0.334 |
|
| 1997 |
Zetterling C, Östling M, Wongchotigul K, Spencer MG, Tang X, Harris CI, Nordell N, Wong SS. Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide Journal of Applied Physics. 82: 2990-2995. DOI: 10.1063/1.366136 |
0.377 |
|
| 1997 |
Tang X, Yuan Y, Wongchotigul K, Spencer MG. Dispersion properties of aluminum nitride as measured by an optical waveguide technique Applied Physics Letters. 70: 3206-3208. DOI: 10.1063/1.119127 |
0.313 |
|
| 1997 |
Sheng S, Spencer MG, Tang X, Zhou P, Wongchotigul K, Taylor C, Harris GL. An investigation of 3C-SiC photoconductive power switching devices Materials Science and Engineering: B. 46: 147-151. DOI: 10.1016/S0921-5107(96)01966-6 |
0.35 |
|
| 1997 |
Jayatirtha H, Spencer M, Taylor C, Greg W. Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation method Journal of Crystal Growth. 174: 662-668. DOI: 10.1016/S0022-0248(97)00038-9 |
0.373 |
|
| 1996 |
Tang X, Yuan Y, Wongchotigul K, Spencer MG. An Optical Waveguide Formed by Aluminum Nitride thin film on Sapphire Mrs Proceedings. 449. DOI: 10.1557/Proc-449-817 |
0.304 |
|
| 1996 |
Tang X, Hossain FRB, Wongchotigul K, Spencer MG. Observation of Near Band Edge Transition in Aluminum Nitride Thin Film Grown by MOCVD Mrs Proceedings. 449. DOI: 10.1557/Proc-449-119 |
0.337 |
|
| 1996 |
Zetterling C-, Wongchotigul K, Spencer MG, Harris CI, Wong SS, Östling M. Formation and High Frequency CV-Measurements of Aluminum / Aluminum Nitride / 6H Silicon Carbide Structures Mrs Proceedings. 423. DOI: 10.1557/Proc-423-667 |
0.396 |
|
| 1995 |
Wongchotiqul K, Chen N, Zhang DP, Tang X, Spencer MG. Low Resistivity Aluminum Nitride: Carbon (AIN:C) Films Grown by Metal Organic Chemical Vapor Deposition Mrs Proceedings. 395. DOI: 10.1016/0167-577X(95)00225-1 |
0.344 |
|
| 1995 |
Moki A, Shenoy P, Alok D, Baliga BJ, Wongchotigul K, Spencer MG. Low resistivity as-deposited ohmic contacts to 3C-SiC Journal of Electronic Materials. 24: 315-318. DOI: 10.1007/Bf02659693 |
0.329 |
|
| 1994 |
Magno R, Spencer MG. Association of a zero-bias anomaly in electron tunneling in AlxGa1-xAs with the DX defect. Physical Review B. 50: 12238-12241. PMID 9975379 DOI: 10.1103/Physrevb.50.12238 |
0.318 |
|
| 1994 |
Beesabathina DP, Fekade K, Wongchotigul K, Spencer MG, Salamanca-Riba L. Structural study of SiC/AlN bilayers and trilayers on Si and 6H-SiC Materials Research Society Symposium - Proceedings. 339: 363-368. DOI: 10.1557/Proc-339-363 |
0.363 |
|
| 1994 |
Dmitriev VA, Irvine K, Spencer M, Kelner G. Low resistivity (∼10−5Ω cm2) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer Applied Physics Letters. 64: 318-320. DOI: 10.1063/1.111193 |
0.355 |
|
| 1994 |
Wongchotigul K, Spencer M, Chen N, Prasad B. Crystal structure of (SiC)x(AlN)1−x grown on 6H-SiC by MOCVD Materials Letters. 21: 381-385. DOI: 10.1016/0167-577X(94)90245-3 |
0.3 |
|
| 1993 |
Shields VB, Fekade K, Spencer MG. Near‐equilibrium growth of thick, high quality beta‐SiC by sublimation Applied Physics Letters. 62: 1919-1921. DOI: 10.1063/1.109544 |
0.359 |
|
| 1992 |
Irvine KJ, Spencer MG, Dmitriev VA. Heteropolytype Growth of Beta Silicon Carbide on Alpha Silicon Carbide by Low Pressure Chemical Vapor Deposition at 1150 C Mrs Proceedings. 281. DOI: 10.1557/Proc-281-793 |
0.344 |
|
| 1992 |
Myers LOA, Spencer MG, Griffin JA. A Comparative Study of the Noise Performance of Aluminum-Gallium-Arsenide/ Gallium-Arsenide High Electron Mobility Transistors with and without Superconducting Gate Electrodes Ieee Electron Device Letters. 13: 273-275. DOI: 10.1109/55.145051 |
0.304 |
|
| 1992 |
Harris GL, Spencer MG, Jones A, Catchings RM. SiC and TaC as optical materials Materials Science and Engineering B. 11: 89-91. DOI: 10.1016/0921-5107(92)90197-H |
0.315 |
|
| 1992 |
Tang X, Irvine K, Ping Z, Spencer M, Molnar B. Measurement of electro-optical properties of β-SiC on sapphire substrates and free-standing films Materials Science and Engineering: B. 11: 39-42. DOI: 10.1016/0921-5107(92)90186-D |
0.348 |
|
| 1991 |
Tang X, Irvine KG, Zhang D, Spencer MG. Linear electro‐optic effect in cubic silicon carbide Applied Physics Letters. 59: 1938-1939. DOI: 10.1063/1.106165 |
0.333 |
|
| 1991 |
Tang X, Wongchotigul K, Spencer MG. Optical waveguide formed by cubic silicon carbide on sapphire substrates Applied Physics Letters. 58: 917-918. DOI: 10.1063/1.104476 |
0.318 |
|
| 1990 |
Tadayon B, Tadayon S, Spencer MG, Harris GL, Griffin J, Eastman LF. Increase of electrical activation and mobility of Si-doped GaAs, grown at low substrate temperatures, by the migration-enhanced epitaxy method Journal of Applied Physics. 67: 589-591. DOI: 10.1063/1.345202 |
0.529 |
|
| 1990 |
Kennedy TA, Glaser ER, Molnar B, Spencer MG. Optically-Detected Magnetic Resonance Of Defects In Thin Layers And Heterostructures Of Iii-V Semiconductors Defect Control in Semiconductors. 975-983. DOI: 10.1016/B978-0-444-88429-9.50006-9 |
0.314 |
|
| 1989 |
Magno R, Shelby R, Kennedy TA, Spencer MG. Metastable defects in Be-doped AlxGa1-xAs Journal of Applied Physics. 65: 4828-4831. DOI: 10.1063/1.343216 |
0.335 |
|
| 1989 |
Tadayon B, Tadayon S, Schaff WJ, Spencer MG, Harris GL, Tasker PJ, Wood CEC, Eastman LF. Reduction of Be diffusion in GaAs by migration-enhanced epitaxy Applied Physics Letters. 55: 59-61. DOI: 10.1063/1.101753 |
0.511 |
|
| 1988 |
Tadayon B, Tadayon S, Spencer MG, Harris GL, Rathbun L, Bradshaw JT, Schaff WJ, Tasker PJ, Eastman LF. Growth of GaAs-Al-GaAs by migration-enhanced epitaxy Applied Physics Letters. 53: 2664-2665. DOI: 10.1063/1.100188 |
0.502 |
|
| 1987 |
Harris GL, Spencer MG, Jackson K, Jones A, Osborne K, Fekade K, Wongchotigul K. Beta Silicon Carbide Growth with Device Applications Mrs Proceedings. 97. DOI: 10.1557/Proc-97-201 |
0.39 |
|
| 1987 |
Zhou P, Spencer MG, Harris GL, Fekade K. Observation of deep levels in cubic silicon carbide Applied Physics Letters. 50: 1384-1385. DOI: 10.1063/1.97864 |
0.358 |
|
| 1986 |
Harris GL, Jackson KH, Felton GJ, Osborne KR, Fekade K, Spencer MG. Low-pressure growth of single-crystal silicon carbide Materials Letters. 4: 77-80. DOI: 10.1016/0167-577X(86)90053-4 |
0.354 |
|
| 1983 |
Spencer MG, Schaff WJ, Wagner DK. Electrical characterization of grain boundaries in GaAs Journal of Applied Physics. 54: 1429-1440. DOI: 10.1063/1.332168 |
0.345 |
|
| 1979 |
Spencer M, Stall R, Eastman LF, Wood CEC. Characterization of grain boundaries using deep level transient spectroscopy Journal of Applied Physics. 50: 8006-8009. DOI: 10.1063/1.325985 |
0.462 |
|
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