Year |
Citation |
Score |
2017 |
Perry EE, Chiu C, Moudgil K, Schlitz RA, Takacs CJ, O’Hara KA, Labram JG, Glaudell AM, Sherman JB, Barlow S, Hawker CJ, Marder SR, Chabinyc ML. High Conductivity in a Nonplanar n-Doped Ambipolar Semiconducting Polymer Chemistry of Materials. 29: 9742-9750. DOI: 10.1021/Acs.Chemmater.7B03516 |
0.357 |
|
2016 |
DeCrescent RA, Brown SJ, Schlitz RA, Chabinyc ML, Schuller JA. Model-blind characterization of thin-film optical constants with momentum-resolved reflectometry. Optics Express. 24: 28842-28857. PMID 27958527 DOI: 10.1364/Oe.24.028842 |
0.311 |
|
2016 |
Brown SJ, Schlitz RA, Chabinyc ML, Schuller JA. Morphology-dependent optical anisotropies in the n -type polymer P(NDI2OD-T2) Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.165105 |
0.349 |
|
2014 |
Lynch J, Kotiuga M, Doan-Nguyen VV, Queen WL, Forster JD, Schlitz RA, Murray CB, Neaton JB, Chabinyc ML, Urban JJ. Ligand coupling symmetry correlates with thermopower enhancement in small-molecule/nanocrystal hybrid materials. Acs Nano. 8: 10528-36. PMID 25211028 DOI: 10.1021/Nn503972V |
0.327 |
|
2014 |
Mai CK, Schlitz RA, Su GM, Spitzer D, Wang X, Fronk SL, Cahill DG, Chabinyc ML, Bazan GC. Side-chain effects on the conductivity, morphology, and thermoelectric properties of self-doped narrow-band-gap conjugated polyelectrolytes. Journal of the American Chemical Society. 136: 13478-81. PMID 25179403 DOI: 10.1021/Ja504284R |
0.437 |
|
2012 |
Schlitz RA, Ha YG, Marks TJ, Lauhon LJ. Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics. Acs Nano. 6: 4452-60. PMID 22540937 DOI: 10.1021/Nn3011834 |
0.564 |
|
2010 |
Schlitz RA, Yoon K, Fredin LA, Ha YG, Ratner MA, Marks TJ, Lauhon LJ. Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors Journal of Physical Chemistry Letters. 1: 3292-3297. DOI: 10.1021/Jz101325R |
0.549 |
|
2009 |
Schlitz RA, Perea DE, Lensch-Falk JL, Hemesath ER, Lauhon LJ. Correlating dopant distributions and electrical properties of boron-doped silicon nanowires Applied Physics Letters. 95. DOI: 10.1063/1.3250431 |
0.374 |
|
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