Peter J. Matsuo
Affiliations: | State University of New York, Albany, Albany, NY, United States |
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Publications
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Standaert TEFM, Matsuo PJ, Li X, et al. (2001) High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 435-446 |
Kastenmeier BEE, Matsuo PJ, Oehrlein GS, et al. (2001) Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 25-30 |
Oehrlein GS, Doemling MF, Kastenmeier BEE, et al. (1999) Surface science issues in plasma etching Ibm Journal of Research and Development. 43: 181-197 |
Kastenmeier BEE, Matsuo PJ, Oehrlein GS. (1999) Highly selective etching of silicon nitride over silicon and silicon dioxide Journal of Vacuum Science and Technology. 17: 3179-3184 |
Schaepkens M, Rueger NR, Beulens JJ, et al. (1999) Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing Journal of Vacuum Science and Technology. 17: 3272-3280 |
Matsuo PJ, Kastenmeier BEE, Oehrlein GS, et al. (1999) Silicon etching in NF3/O2 remote microwave plasmas Journal of Vacuum Science and Technology. 17: 2431-2437 |
Standaert TEFM, Matsuo PJ, Allen SD, et al. (1999) Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2 Journal of Vacuum Science and Technology. 17: 741-748 |
Kastenmeier BEE, Matsuo PJ, Oehrlein GS, et al. (1998) Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures Journal of Vacuum Science and Technology. 16: 2047-2056 |
Matsuo PJ, Kastenmeier BEE, Beulens JJ, et al. (1997) Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon Journal of Vacuum Science and Technology. 15: 1801-1813 |
Kastenmeier BEE, Matsuo PJ, Beulens JJ, et al. (1996) Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures Journal of Vacuum Science and Technology. 14: 2802-2813 |