Ingolf Lindau - Publications

Affiliations: 
Applied Physics Stanford University, Palo Alto, CA 
Website:
http://simes.stanford.edu/investigator/ingolf-lindau-2/

392 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Pianetta P, Lindau I. Synchrotron Stories from Stanford—From a Parking Lot to First Beam Synchrotron Radiation News. 28: 24-25. DOI: 10.1080/08940886.2015.1059233  0.468
2005 Lindau I, Pianetta P. William Edward Spicer Physics Today. 58: 86-87. DOI: 10.1063/1.1995762  0.404
2002 Zakharov A, Ralchenko V, Khmelnitskii R, Lindau I. Scanning photoelectron microscopy study of as-grown and heat-treated chemical vapor deposition boron-doped diamond films Journal of Vacuum Science & Technology B. 20: 2509-2513. DOI: 10.1116/1.1525009  0.301
1997 Doniach S, Hodgson K, Lindau I, Pianetta P, Winick H. Early work with synchrotron radiation at stanford. Journal of Synchrotron Radiation. 4: 380-95. PMID 16699252 DOI: 10.1107/S0909049597012235  0.386
1993 Yeh J, Hwang J, Bertness K, Friedman DJ, Cao R, Lindau I. Growth of the room temperature Au/Si(111)-7 x 7 interface. Physical Review Letters. 70: 3768-3771. PMID 10053957 DOI: 10.1103/Physrevlett.70.3768  0.398
1993 Wu J, Cao R, Yang X, Pianetta P, Lindau I. Photoemission study of diamond (100) surface Journal of Vacuum Science and Technology. 11: 1048-1051. DOI: 10.1116/1.578439  0.588
1992 Borg A, King PL, Pianetta P, Lindau I, Mitzi DB, Kapitulnik A, Soldatov AV, Della Longa S, Bianconi A. Ca 3d unoccupied states in Bi2Sr2CaCu2O8 investigated by Ca L2,3 x-ray-absorption near-edge structure. Physical Review. B, Condensed Matter. 46: 8487-8495. PMID 10002613 DOI: 10.1103/Physrevb.46.8487  0.491
1992 Wu J, Richter M, Cao R, Terry J, Pianetita P, Lindau I. Antimony on Diamond: A Comparison to Sb/Si and Sb/Ge Mrs Proceedings. 270. DOI: 10.1557/Proc-270-407  0.617
1992 Wu J, Shen Z, Dessau DS, Cao R, Marshall DS, Pianetfa P, Lindau I, Yang X, Terry J, King DM, Wells BO. Photoemission Study of Single Crystal C60 Mrs Proceedings. 270. DOI: 10.1557/Proc-270-235  0.705
1992 Wu J, Shen ZX, Dessau DS, Cao R, Marshall DS, Pianetta P, Lindau I, Yang X, Terry J, King DM, Wells BO, Elloway D, Wendt HR, Brown CA, Hunziker H, et al. Electronic structure of single crystal C60 Physica C: Superconductivity and Its Applications. 197: 251-260. DOI: 10.1016/0921-4534(92)90007-Y  0.752
1991 Parmigiani F, Shen ZX, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. O 1s core levels in Bi2Sr2CaCu2O8+ delta single crystals. Physical Review. B, Condensed Matter. 43: 3085-3090. PMID 9997612 DOI: 10.1103/Physrevb.43.3085  0.584
1991 Miyano KE, King DM, Spindt CJ, Kendelewicz T, Cao R, Yu Z, Lindau I, Spicer WE. Potential-barrier measurements at clustered metal-semiconductor interfaces. Physical Review. B, Condensed Matter. 43: 11806-11814. PMID 9996953 DOI: 10.1103/Physrevb.43.11806  0.631
1991 Miyano KE, Cao R, Spindt CJ, Kendelewicz T, Lindau I, Spicer WE. Band bending at low-temperature metal/III-V semiconductor interfaces: The overshoot phenomenon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2100-2107. DOI: 10.1116/1.585782  0.64
1991 Richter M, Woicik JC, Pianetta P, Miyano KE, Bouldin CE, Spicer WE, Lindau I, Kendelewicz T. Surface extended x-ray adsorption fine structure studies of the Si(001) 2X1-Sb interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 1951-1955. DOI: 10.1116/1.577433  0.767
1991 Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Erratum: ``Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb'' [Phys. Rev. Lett. 65, 3417 (1990)] Physical Review Letters. 66: 2836. DOI: 10.1103/Physrevlett.66.2836  0.756
1991 Parmigiani F, Shen ZX, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. O 1s core levels in Bi2Sr2CaCu2O8+ single crystals Physical Review B. 43: 3085-3090. DOI: 10.1103/PhysRevB.43.3085  0.498
1991 Miyano KE, King DM, Spindt CJ, Kendelewicz T, Cao R, Yu Z, Lindau I, Spicer WE. Potential-barrier measurements at clustered metal-semiconductor interfaces Physical Review B. 43: 11806-11814. DOI: 10.1103/PhysRevB.43.11806  0.535
1991 King PL, Borg A, Kim C, Yoshikawa SA, Pianetta P, Lindau I. Synchrotron-based imaging with a magnetic projection photoelectron microscope Ultramicroscopy. 36: 117-129. DOI: 10.1016/0304-3991(91)90143-T  0.482
1991 Puppin E, Lindau I, Abbati I. Photoemission core level shifts in Gd silicides Solid State Communications. 77: 983-986. DOI: 10.1016/0038-1098(91)90358-3  0.365
1990 Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2 x 1-Sb. Physical Review Letters. 65: 3417-3420. PMID 10042866 DOI: 10.1103/Physrevlett.65.3417  0.767
1990 Shen Z, Shih CK, Jepsen O, Spicer WE, Lindau I, Allen JW. Aspects of the correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO. Physical Review Letters. 64: 2442-2445. PMID 10041713 DOI: 10.1103/Physrevlett.64.2442  0.671
1990 Miyano KE, Kendelewicz T, Cao R, Spindt CJ, Lindau I, Spicer WE, Woicik JC. Morphology and barrier-height development of Bi/InP(110) interfaces. Physical Review. B, Condensed Matter. 42: 3017-3023. PMID 9995794 DOI: 10.1103/Physrevb.42.3017  0.641
1990 Shen Z, Allen JW, Lindberg PA, Dessau DS, Wells BO, Borg A, Ellis W, Kang JS, Oh S, Lindau I, Spicer WE. Photoemission study of CoO. Physical Review. B, Condensed Matter. 42: 1817-1828. PMID 9995615 DOI: 10.1103/Physrevb.42.1817  0.684
1990 Shen Z, List RS, Dessau DS, Parmigiani F, Arko AJ, Bartlett R, Wells BO, Lindau I, Spicer WE. Photoemission study of CuO and Cu2O single crystals. Physical Review. B, Condensed Matter. 42: 8081-8085. PMID 9994977 DOI: 10.1103/Physrevb.42.8081  0.651
1990 Yeh J, Spicer WE, Lindau I, Sun J, Char K, Missert N, Kapitulnik A, Geballe TH, Beasley MR. Variation of Cu-O charge-transfer energies in YBa2Cu3O7-x thin films studied by photoemission spectroscopy. Physical Review. B, Condensed Matter. 42: 8044-8048. PMID 9994972 DOI: 10.1103/Physrevb.42.8044  0.543
1990 Gunnarsson O, Allen JW, Jepsen O, Fujiwara T, Andersen OK, Olsen CG, Maple MB, Kang J, Liu LZ, Park J, Anderson RO, Ellis WP, Liu R, Markert JT, Dalichaouch Y, ... ... Lindau I, et al. Polarized resonance photoemission for Nd2CuO4. Physical Review. B, Condensed Matter. 41: 4811-4814. PMID 9994326 DOI: 10.1103/Physrevb.41.4811  0.633
1990 Miyano KE, Cao R, Kendelewicz T, Wahi AK, Lindau I, Spicer WE. Reaction and barrier formation at metal-GaP(110) interfaces. Physical Review. B, Condensed Matter. 41: 1076-1089. PMID 9993804 DOI: 10.1103/Physrevb.41.1076  0.591
1990 Spindt CJ, Cao R, Miyano KE, Lindau I, Spicer WE, Pao Y‐. Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100) Journal of Vacuum Science & Technology B. 8: 974-979. DOI: 10.1116/1.584951  0.61
1990 Wahi AK, Carey GP, Miyano K, Chiang TT, Lindau I, Spicer WE. Interfacial chemistry of metals on CdTe and ZnTe (110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1152-1158. DOI: 10.1116/1.576978  0.625
1990 Wahi AK, Miyano K, Carey GP, Chiang TT, Lindau I, Spicer WE. Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1926-1933. DOI: 10.1116/1.576784  0.624
1990 Cao R, Miyano K, Lindau I, Spicer WE. Investigation of In contacts on atomically clean GaAs(110) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3460-3465. DOI: 10.1116/1.576532  0.626
1990 Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb Physical Review Letters. 65: 3417-3420. DOI: 10.1103/PhysRevLett.65.3417  0.589
1990 Shen ZX, Shih CK, Jepsen O, Spicer WE, Lindau I, Allen JW. Aspects of the correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO Physical Review Letters. 64: 2442-2445. DOI: 10.1103/PhysRevLett.64.2442  0.521
1990 Shen ZX, List RS, Dessau DS, Parmigiani F, Arko AJ, Bartlett R, Wells BO, Lindau I, Spicer WE. Photoemission study of CuO and Cu2O single crystals Physical Review B. 42: 8081-8085. DOI: 10.1103/PhysRevB.42.8081  0.487
1990 Yeh JJ, Spicer WE, Lindau I, Sun JZ, Char K, Missert N, Kapitulnik A, Geballe TH, Beasley MR. Variation of Cu-O charge-transfer energies in YBa2Cu3O7-x thin films studied by photoemission spectroscopy Physical Review B. 42: 8044-8048. DOI: 10.1103/PhysRevB.42.8044  0.533
1990 Miyano KE, Kendelewicz T, Cao R, Spindt CJ, Lindau I, Spicer WE, Woicik JC. Morphology and barrier-height development of Bi/InP(110) interfaces Physical Review B. 42: 3017-3023. DOI: 10.1103/PhysRevB.42.3017  0.54
1990 Shen ZX, Allen JW, Lindberg PAP, Dessau DS, Wells BO, Borg A, Ellis W, Kang JS, Oh SJ, Lindau I, Spicer WE. Photoemission study of CoO Physical Review B. 42: 1817-1828. DOI: 10.1103/PhysRevB.42.1817  0.555
1990 Gunnarsson O, Allen JW, Jepsen O, Fujiwara T, Andersen OK, Olsen CG, Maple MB, Kang JS, Liu LZ, Park JH, Anderson RO, Ellis WP, Liu R, Markert JT, Dalichaouch Y, ... ... Lindau I, et al. Polarized resonance photoemission for Nd2CuO4 Physical Review B. 41: 4811-4814. DOI: 10.1103/PhysRevB.41.4811  0.469
1990 Miyano KE, Cao R, Kendelewicz T, Wahi AK, Lindau I, Spicer WE. Reaction and barrier formation at metal-GaP(110) interfaces Physical Review B. 41: 1076-1089. DOI: 10.1103/PhysRevB.41.1076  0.553
1990 Kendelewicz T, Miyano K, Cao R, Pianetta P, Lindau I, Spicer WE, Woicik JC. Semiconductor surface core level shifts by use of selected overlayers Physica Scripta. 41: 1034-1036. DOI: 10.1088/0031-8949/41/6/072  0.758
1990 Miyano KE, Cao R, Kendelewicz T, Wahi AK, Lindau I, Spicer WE. Photoemission spectroscopy of ordered overlayers on GaP (110) Physica Scripta. 41: 973-978. DOI: 10.1088/0031-8949/41/6/058  0.661
1990 King PL, Borg A, Kim C, Pianetta P, Lindau I, Knapp G, Keenlyside M. Small area photoemission and photoabsorption measurements using a photoelectron microscope Physica Scripta. 41: 413-417. DOI: 10.1088/0031-8949/41/4/007  0.482
1990 Allen JW, Kang J, Liu L, Gunnarsson O, Christensen NE, Andersen OK, Maple MB, Torikachvili MS, Koelling DD, Ellis WP, Pate BB, Shen Z, Yeh JJ, Lindau I. Electron Spectroscopy of Heavy-Fermion Materials Physica Scripta. 1990: 232-238. DOI: 10.1088/0031-8949/1990/T31/032  0.304
1990 Lindberg PAP, Wells BO, Shen ZX, Dessau DS, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8 Journal of Applied Physics. 67: 2667-2670. DOI: 10.1063/1.345480  0.73
1990 Pianetta P, King PL, Borg A, Kim C, Lindau I, Knapp G, Keenlyside M, Browning R. Core level photoelectron microscopy Journal of Electron Spectroscopy and Related Phenomena. 52: 797-810. DOI: 10.1016/0368-2048(90)85065-H  0.518
1990 Cao R, Miyano K, Lindau I, Spicer WE. Investigation of interface states and fermi level pinning mechanisms with metals on InP(110) surfaces Journal of Electron Spectroscopy and Related Phenomena. 51: 581-589. DOI: 10.1016/0368-2048(90)80182-A  0.662
1990 King PL, Borg A, Kim C, Pianetta P, Lindau I, Knapp GS, Keenlyside M, Browning R. From small-area to imaging photoabsorption spectroscopy Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 291: 19-25. DOI: 10.1016/0168-9002(90)90027-4  0.466
1990 Lindberg PAP, Shen ZX, Spicer WE, Lindau I. Photoemission studies of high-temperature superconductors Surface Science Reports. 11: 1-137. DOI: 10.1016/0167-5729(90)90002-U  0.613
1989 Wells BO, Lindberg PA, Shen Z, Dessau DS, Spicer WE, Lindau I, Mitzi DB, Kapitulnik A. Valence-band states in Bi2(Ca,Sr,La)3Cu2O8. Physical Review. B, Condensed Matter. 40: 5259-5262. PMID 9992545 DOI: 10.1103/Physrevb.40.5259  0.768
1989 Lindberg PA, Shen Z, Dessau DS, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Energy dispersions of single-crystalline Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+ delta superconductors determined using angle-resolved photoelectron spectroscopy. Physical Review. B, Condensed Matter. 40: 5169-5171. PMID 9992520 DOI: 10.1103/Physrevb.40.5169  0.666
1989 Lindberg PA, Shen Z, Wells BO, Dessau DS, Ellis WP, Borg A, Kang J, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Photoemission study of absorption mechanisms in Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+ delta, BaBiO3, and Nd1.85Ce0.15CuO4. Physical Review. B, Condensed Matter. 40: 8840-8843. PMID 9991366 DOI: 10.1103/Physrevb.40.8840  0.652
1989 Lindberg PA, Shen Z, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Electronic structure of clean and Ag-covered single-crystalline Bi2Sr2CuO6. Physical Review. B, Condensed Matter. 40: 8769-8773. PMID 9991354 DOI: 10.1103/Physrevb.40.8769  0.65
1989 Shen Z, Lindberg PA, Wells BO, Dessau DS, Borg A, Lindau I, Spicer WE, Ellis WP, Kwei GH, Ott KC, Kang J, Allen JW. Photoemission study of monoclinic BaBiO3. Physical Review. B, Condensed Matter. 40: 6912-6918. PMID 9991069 DOI: 10.1103/Physrevb.40.6912  0.682
1989 Lindberg PA, Lindau I, Spicer WE. Quantitative analysis of x-ray photoemission spectra applied to Bi2Sr2CaCu2O8 high-temperature superconductors. Physical Review. B, Condensed Matter. 40: 6822-6827. PMID 9991056 DOI: 10.1103/Physrevb.40.6822  0.595
1989 Dessau DS, Shen Z, Lindberg PA, Wells BO, Borg A, Lindau I, Spicer WE, Waszczak JV, Schneemeyer LF. Electronic structure of Pb2Sr2PrCu3O8 as studied by resonant photoemission spectroscopy. Physical Review. B, Condensed Matter. 40: 6726-6730. PMID 9991045 DOI: 10.1103/Physrevb.40.6726  0.758
1989 Shen Z, Lindberg PA, Dessau DS, Lindau I, Spicer WE, Mitzi DB, Bozovic I, Kapitulnik A. Photoelectron energy-loss study of the Bi2CaSr2Cu2O8 superconductor. Physical Review. B, Condensed Matter. 39: 4295-4298. PMID 9948769 DOI: 10.1103/Physrevb.39.4295  0.67
1989 Lindberg PA, Shen Z, Wells BO, Dessau DS, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Reaction of Rb and oxygen overlayers with single-crystalline Bi2Sr2CaCu2O8+ delta superconductors. Physical Review. B, Condensed Matter. 39: 2890-2893. PMID 9948571 DOI: 10.1103/Physrevb.39.2890  0.634
1989 Kang J, Allen JW, Maple MB, Torikachvili MS, Ellis WP, Pate BB, Shen Z, Yeh JJ, Lindau I. Fermi-level tuning in Y1-xUxPd3. Physical Review. B, Condensed Matter. 39: 13529-13532. PMID 9948262 DOI: 10.1103/Physrevb.39.13529  0.469
1989 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Metallization and Fermi-level movement at the Cs/GaAs(110) interfaces. Physical Review. B, Condensed Matter. 39: 12655-12663. PMID 9948134 DOI: 10.1103/Physrevb.39.12655  0.649
1989 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Duality in Fermi-level pinning at Cu/InP(110) and Ag/InP(110) interfaces. Physical Review. B, Condensed Matter. 39: 11146-11149. PMID 9947932 DOI: 10.1103/Physrevb.39.11146  0.594
1989 Ardehali M, Mahowald PH, Lindau I. Electronic structure of the Ag/Si interface: Angle-resolved, energy-dependent, photoemission study. Physical Review. B, Condensed Matter. 39: 8107-8114. PMID 9947515 DOI: 10.1103/Physrevb.39.8107  0.37
1989 Shen Z, Lindberg PA, Soukiassian P, Eom CB, Lindau I, Spicer WE, Geballe TH. Nature of the states near the Fermi level of the layered superconductors of Bi2Ca1Sr2Cu2O8 and Bi2Sr2CuO6. Physical Review. B, Condensed Matter. 39: 823-826. PMID 9947242 DOI: 10.1103/Physrevb.39.823  0.639
1989 Kendelewicz T, Miyano K, Cao R, Lindau I, Spicer WE. Abrupt interfaces on InP(110): Cases of Sb and Sn Journal of Vacuum Science & Technology B. 7: 991-996. DOI: 10.1116/1.584592  0.638
1989 Chiang TT, Wahi AK, Lindau I, Spicer WE. Annealing Ag on GaAs: Interplay between cluster formation and Fermi level unpinning Journal of Vacuum Science & Technology B. 7: 958-963. DOI: 10.1116/1.584587  0.593
1989 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Low‐temperature alkali metal/III–V interfaces: A study of metallization and Fermi level movement Journal of Vacuum Science & Technology B. 7: 919-924. DOI: 10.1116/1.584581  0.626
1989 Wahi AK, Carey GP, Chiang TT, Lindau I, Spicer WE. CdTe and ZnTe metal interface formation and Fermi-level pinning Journal of Vacuum Science and Technology. 7: 494-498. DOI: 10.1116/1.576209  0.622
1989 King PL, Browning R, Pianetta P, Lindau I, Keenlyside M, Knapp G. Image processing of multispectral x-ray photoelectron spectroscopy images Journal of Vacuum Science and Technology. 7: 3301-3304. DOI: 10.1116/1.576140  0.437
1989 Cao R, Miyano K, Lindau I, Spicer WE. Metal cluster formation on GaAs(110): A temperature dependence study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1975-1982. DOI: 10.1116/1.575996  0.602
1989 Cao R, Miyano K, Lindau I, Spicer WE. Fermi-level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfaces Journal of Vacuum Science and Technology. 7: 738-743. DOI: 10.1116/1.575876  0.641
1989 Miyano KE, Cao R, Kendelewicz T, Lindau I, Spicer WE. Temperature control of morphology and barrier formation at the In/GaAs(110) interface Journal of Vacuum Science and Technology. 7: 731-737. DOI: 10.1116/1.575875  0.623
1989 Kendelewicz T, Cao R, Miyano K, Lindau I, Spicer WE. Unique band bending at the Sb/InP(110) interface Journal of Vacuum Science and Technology. 7: 765-769. DOI: 10.1116/1.575836  0.635
1989 Kendelewicz T, Cao R, Miyano K, Lindau I, Spicer WE. Resonant photoemission from the Ni–GaAs(110) interface Journal of Vacuum Science and Technology. 7: 749-752. DOI: 10.1116/1.575833  0.587
1989 Cao R, Miyano K, Lindau I, Spicer WE. Evidence for two pinning mechanisms with noble metals on InP(110) Journal of Vacuum Science and Technology. 7: 861-864. DOI: 10.1116/1.575811  0.649
1989 Lindberg PAP, Shen ZX, Wells BO, Dessau DS, Ellis WP, Borg A, Kang JS, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Photoemission study of absorption mechanisms in Bi2.0Sr1.8Ca0.8La0.3Cu2. 1O8+, BaBiO3, and Nd1.85Ce0.15CuO4 Physical Review B. 40: 8840-8843. DOI: 10.1103/PhysRevB.40.8840  0.522
1989 Lindberg PAP, Shen ZX, Dessau DS, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Energy dispersions of single-crystalline Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+ superconductors determined using angle-resolved photoelectron spectroscopy Physical Review B. 40: 5169-5171. DOI: 10.1103/PhysRevB.40.5169  0.537
1989 Lindberg PAP, Shen ZX, Wells BO, Dessau DS, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Reaction of Rb and oxygen overlayers with single-crystalline Bi2Sr2CaCu2O8+ superconductors Physical Review B. 39: 2890-2893. DOI: 10.1103/PhysRevB.39.2890  0.518
1989 Lindberg PAP, Shen ZX, Wells BO, Dessau DS, Borg A, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Spectroscopic evidence of two-dimensional character of the 90 K Bi 2(Sr,La,Ca)3Cu2O8 superconductors Applied Physics Letters. 55: 1141-1143. DOI: 10.1063/1.101889  0.728
1989 Spindt CJ, Liu D, Miyano K, Meissner PL, Chiang TT, Kendelewicz T, Lindau I, Spicer WE. Vacuum ultraviolet photoelectron spectroscopy of (NH4) 2S-treated GaAs (100) surfaces Applied Physics Letters. 55: 861-863. DOI: 10.1063/1.101780  0.656
1989 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Fermi level movement at the Cs/GaAs (110) interfaces Applied Physics Letters. 54: 1250-1252. DOI: 10.1063/1.100730  0.643
1989 Lindberg PAP, Shen ZX, Dessau DS, Wells BO, Borg A, Ellis W, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. The electronic structure of Bi2.0Sr1.8La0.3Ca0.8Cu2.1O8+δ superconductors studied using ultraviolet and X-ray photoelectron spectroscopy Physica C: Superconductivity and Its Applications. 159: 649-653. DOI: 10.1016/0921-4534(89)91299-9  0.742
1989 Dessau DS, Chen ZX, Lindberg PAP, Wells BO, Borg A, Lindau I, Spicer WE, Waszczak JV, Schneemeyer LF. The electronic structure of Pb2Sr2PrCu3O8 as studied by resonant photoemission spectroscopy Physica C: Superconductivity and Its Applications. 162: 1373-1374. DOI: 10.1016/0921-4534(89)90739-9  0.594
1989 Lindberg PAP, Shen ZX, Dessau DS, Wells BO, Borg A, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Electronic structure of single crystalline Bi2(Sr,Ca,La)3Cu2O8 Physica C: Superconductivity and Its Applications. 162: 1313-1314. DOI: 10.1016/0921-4534(89)90709-0  0.718
1989 Shen ZX, Lindberg PAP, Shih CK, Spicer WE, Lindau I. Angle-resolved photoemission study of NiO and CoO Physica C: Superconductivity and Its Applications. 162: 1311-1312. DOI: 10.1016/0921-4534(89)90708-9  0.618
1989 Ardehali M, Mahowald PH, Lindau I. The energy dependence of the 4d partial photoionization cross section in metallic Ag and in Ag atoms on Si at the cooper minimum and near the 4d threshold Journal of Electron Spectroscopy and Related Phenomena. 48: 353-362. DOI: 10.1016/0368-2048(89)80019-2  0.335
1989 Spicer WE, Cao R, Miyano K, Kendelewicz T, Lindau I, Weber E, Liliental-Weber Z, Newman N. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation Applied Surface Science. 41: 1-16. DOI: 10.1016/0169-4332(89)90026-3  0.631
1989 Kendelewicz T, Miyano K, Cao R, Woicik JC, Lindau I, Spicer WE. Surface core level shifts on InP(110). Use of Sb overlayers Surface Science. 220: L726-L732. DOI: 10.1016/0167-2584(89)90710-X  0.718
1989 Cao R, Miyano K, Lindau I, Spicer WE. Use of temperature to study the nature of interface states and Fermi level pinning with metals on GaAs(110) Thin Solid Films. 181: 43-55. DOI: 10.1016/0040-6090(89)90471-9  0.658
1989 Scott G, Ninomiya K, Helms CR, Lindau I. Auger analysis of Si sputtered with Ar+ ions in an F2 ambient Surface Science. 221: 253-262. DOI: 10.1016/0039-6028(89)90579-7  0.308
1989 Kendelewicz T, Miyano K, Cao R, Woicik JC, Lindau I, Spicer WE. Surface core level shifts on InP(110) Surface Science. 220. DOI: 10.1016/0039-6028(89)90226-4  0.703
1989 Lindberg PAP, Shen ZX, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Photoemission study of the electronic structure (Pr0.2La0.8)(Ba1.875La0.125)Cu3O7-gd Solid State Communications. 72: 575-578. DOI: 10.1016/0038-1098(89)91036-3  0.616
1989 Ellis WP, Boring AM, Allen JW, Cox LE, Cowan RD, Pate BB, Arko AJ, Lindau I. Valance-Band photoemission intensities in thorium dioxide Solid State Communications. 72: 725-729. DOI: 10.1016/0038-1098(89)90682-0  0.328
1989 Puppin E, Lindau I. Kinetic effects in the overgrowth of Gd on Si: A photoemission study Solid State Communications. 71: 1015-1018. DOI: 10.1016/0038-1098(89)90582-6  0.334
1989 Cao R, Miyano K, Lindau I, Spicer WE. Temperature effects on morphology, reaction, and fermi level movement at Ga/InP(110) interface Solid State Communications. 70: 7-10. DOI: 10.1016/0038-1098(89)90456-0  0.607
1989 Lindberg PAP, Shen ZX, Hwang J, Shih CK, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Electronic structure of the La1 + xBa2 - xCu3O7 + δ system studied by photoelectron spectroscopy Solid State Communications. 69: 27-31. DOI: 10.1016/0038-1098(89)90020-3  0.636
1989 Kang JS, Allen JW, Shen ZX, Ellis WP, Yeh JJ, Lee BW, Maple MB, Spicer WE, Lindau I. Electronic structure of the quenched superconductivity materials Y1-xPrxBa2Cu3O7-δ Journal of the Less-Common Metals. 148: 121-132. DOI: 10.1016/0022-5088(89)90018-0  0.596
1988 Bertness KA, Yeh J, Friedman DJ, Mahowald PH, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces. Physical Review. B, Condensed Matter. 38: 5406-5421. PMID 9946979 DOI: 10.1103/Physrevb.38.5406  0.648
1988 Shen Z, Lindberg PA, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors. Physical Review. B, Condensed Matter. 38: 11820-11823. PMID 9946074 DOI: 10.1103/Physrevb.38.11820  0.7
1988 Kendelewicz T, Soukiassian P, Bakshi MH, Hurych Z, Lindau I, Spicer WE. Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces. Physical Review. B, Condensed Matter. 38: 7568-7575. PMID 9945484 DOI: 10.1103/Physrevb.38.7568  0.549
1988 Shen Z, Lindberg PA, Lindau I, Spicer WE, Eom CB, Geballe TH. Electronic structure of Bi-Ca-Sr-Cu-O superconductors studied by photoelectron spectroscopy. Physical Review. B, Condensed Matter. 38: 7152-7155. PMID 9945426 DOI: 10.1103/Physrevb.38.7152  0.675
1988 Friedman DJ, Lindau I, Spicer WE. Noble-metal-CdTe interface formation. Physical Review. B, Condensed Matter. 37: 731-739. PMID 9944565 DOI: 10.1103/Physrevb.37.731  0.63
1988 Kendelewicz T, Soukiassian P, List RS, Woicik JC, Pianetta P, Lindau I, Spicer WE. Bonding at the K/Si(100) 2 x 1 interface: A surface extended x-ray-absorption fine-structure study. Physical Review. B, Condensed Matter. 37: 7115-7117. PMID 9943990 DOI: 10.1103/Physrevb.37.7115  0.743
1988 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study Mrs Proceedings. 143. DOI: 10.1557/Proc-143-103  0.545
1988 Chiang TT, Spindt CJ, Spicer WE, Lindau I, Browning R. Reversibility of Fermi level pinning Journal of Vacuum Science & Technology B. 6: 1409-1415. DOI: 10.1116/1.584231  0.646
1988 Miyano KE, Cao R, Kendelewicz T, Spindt CJ, Mahowald PH, Lindau I, Spicer WE. A substrate doping variation study of the pinning states at metal/GaAs(110) interfaces Journal of Vacuum Science & Technology B. 6: 1403-1408. DOI: 10.1116/1.584230  0.636
1988 Mccants CE, Kendelewicz T, Mahowald PH, Bertness KA, Williams MD, Newman N, Lindau I, Spicer WE. Chemical and electrical properties at the annealed Ti/GaAsf 110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1466-1472. DOI: 10.1116/1.575727  0.658
1988 Shih CK, Wahi AK, Lindau I, Spicer WE. Summary Abstract: Natural band lineups in II—VI compound semiconductors and their alloys: A study using core level photoemission measurement in the alloy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2640-2642. DOI: 10.1116/1.575523  0.581
1988 Green M, Richter M, Kortright J, Barbee T, Carr R, Lindau I. Scanning tunneling microscopy of x‐ray optics Journal of Vacuum Science and Technology. 6: 428-431. DOI: 10.1116/1.575388  0.318
1988 List RS, Kendelewicz T, Williams MD, Mccants CE, Lindau I, Spicer WE. Chemical reactions at the Si/GaAs(110) and Si/lnP(110) interfaces: Effects on valence-band discontinuity measurements Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1543-1547. DOI: 10.1116/1.575359  0.636
1988 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Summary Abstract: Temperature effects at the Sb/GaAs(110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1571-1572. DOI: 10.1116/1.575327  0.596
1988 Kendelewicz T, Soukiassian P, Bakshi MH, Hurych Z, Lindau I, Spicer WE. Summary Abstract: Adsorption of Cs on the GaAs(110) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1569-1570. DOI: 10.1116/1.575326  0.6
1988 Shen ZX, Lindberg PAP, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2 O8 superconductors Physical Review B. 38: 11820-11823. DOI: 10.1103/PhysRevB.38.11820  0.545
1988 Friedman DJ, Lindau I, Spicer WE. Noble-metal CdTe interface formation Physical Review B. 37: 731-739. DOI: 10.1103/PhysRevB.37.731  0.554
1988 Kendelewicz T, Soukiassian P, List RS, Woicik JC, Pianetta P, Lindau I, Spicer WE. Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study Physical Review B. 37: 7115-7117. DOI: 10.1103/PhysRevB.37.7115  0.591
1988 Lindberg PAP, Soukiassian P, Shen ZX, Shah SI, Eom CB, Lindau I, Spicer WE, Geballe TH. Electronic structure of ceramics and thin-film samples of high T c Bi2Sr2CaCu2O8+δ superconductors: Effects of Ar+ sputtering, O2 exposure, and Rb deposition Applied Physics Letters. 53: 1970-1972. DOI: 10.1063/1.100672  0.608
1988 Lindberg PAP, Shen ZX, Lindau I, Spicer WE, Eom CB, Geballe TH. Photoemission study of the surface electronic structure of Bi-Ca-Sr-Cu-O superconductors modified by Ne sputtering, Ag deposition, and heat treatment Applied Physics Letters. 53: 529-531. DOI: 10.1063/1.100626  0.645
1988 Lindberg PAP, Shen ZX, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Surface structure of Bi2Sr2CaCu2O 8+δ high-temperature superconductors studied using low-energy electron diffraction Applied Physics Letters. 53: 2563-2565. DOI: 10.1063/1.100532  0.609
1988 Cao R, Miyano K, Lindau I, Spicer WE. Unusual low-temperature behavior of Fermi level movement at the Sb/GaAs interface Applied Physics Letters. 53: 137-139. DOI: 10.1063/1.100417  0.626
1988 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems Applied Physics Letters. 53: 210-212. DOI: 10.1063/1.100133  0.609
1988 Ardehali M, Lindau I. Solid-state effects on the asymmetry parameter and on the partial photoionization cross section of ag4d valence-band at the cooper minimum Journal of Electron Spectroscopy and Related Phenomena. 46: 215-225. DOI: 10.1016/0368-2048(88)80020-3  0.325
1988 Spicer WE, Kendelewicz T, Newman N, Cao R, McCants C, Miyano K, Lindau I, Liliental-Weber Z, Weber ER. The advanced unified defect model and its applications Applied Surface Science. 33: 1009-1029. DOI: 10.1016/0169-4332(88)90411-4  0.641
1988 Bachrach RZ, Bringans RD, Swartz LE, Lindau I, Pate BB, Carr RG, Hower N, Youngman B, Morales H, Pianetta P. Multi-Undulator Beam Line V at SSRL: A progress report Nuclear Inst. and Methods in Physics Research, A. 266: 83-90. DOI: 10.1016/0168-9002(88)90364-6  0.439
1988 Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Photoemission investigation of Sb/GaAs(110) interfaces Surface Science. 206: 413-425. DOI: 10.1016/0039-6028(88)90144-6  0.654
1988 Puppin E, Guyot H, Shen ZX, Hwang J, Lindau I. Photoemission from the Si/La interface Solid State Communications. 67: 23-27. DOI: 10.1016/0038-1098(88)90007-5  0.379
1988 Bertness KA, Mahowald PH, McCants CE, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Photoenhancement mechanism for oxygen chemisorption on GaAs(110) using visible light Applied Physics a Solids and Surfaces. 47: 219-228. DOI: 10.1007/Bf00615927  0.62
1987 Doniach S, Chin KK, Lindau I, Spicer WE. Microscopic metal clusters and Schottky barrier formation. Physical Review Letters. 58: 591-594. PMID 10034980 DOI: 10.1103/Physrevlett.58.591  0.705
1987 Shen Zx, Allen JW, Yeh JJ, Kang J, Ellis W, Spicer W, Lindau I, Maple MB, Dalichaouch YD, Torikachvili MS, Sun JZ. Anderson Hamiltonian description of the experimental electronic structure and magnetic interactions of copper oxide superconductors. Physical Review. B, Condensed Matter. 36: 8414-8428. PMID 9942659 DOI: 10.1103/Physrevb.36.8414  0.681
1987 Chin KK, Cao R, Kendelewicz T, Miyano K, Yeh J, Lindau I, Spicer WE. Physical nature of the InP near-surface defect acceptor and donor states. Physical Review. B, Condensed Matter. 36: 5914-5919. PMID 9942269 DOI: 10.1103/Physrevb.36.5914  0.732
1987 Friedman DJ, Carey GP, Lindau I, Spicer WE. Overlayer-cation reaction at the Pt/Hg1-xCdxTe interface. Physical Review. B, Condensed Matter. 35: 1188-1195. PMID 9941526 DOI: 10.1103/Physrevb.35.1188  0.513
1987 Petro WG, Kendelewicz T, Lindau I, Spicer WE. Erratum: Au-GaAs(110) interface: Photoemission studies of the effects of temperature Physical Review. B, Condensed Matter. 35: 5891. PMID 9940809  0.564
1987 Cox LE, Ellis WP, Cowan RD, Allen JW, Oh S, Lindau I, Pate BB, Arko AJ. Valence-band photoemission in UO2(111) near the 5d resonant photon energy. Physical Review. B, Condensed Matter. 35: 5761-5765. PMID 9940789 DOI: 10.1103/Physrevb.35.5761  0.3
1987 Shen Z, Allen JW, Yeh JJ, Kang J, Ellis W, Spicer WE, Lindau I, Sun JZ, Geballe TH, Maple MB, Dalichaouch YD, Torikachvei MS. Photoemission Study of the Electronic Structure of Copper Oxide Superconductors Mrs Proceedings. 99. DOI: 10.1557/Proc-99-349  0.606
1987 Puppin E, Nogami J, Carbone C, Shen ZX, Lindau I, Pate BB, Abbati I, Braicovich L. A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides Journal of Vacuum Science & Technology B. 5: 1083-1086. DOI: 10.1116/1.583733  0.357
1987 Chin KK, Miyano K, Cao R, Kendelewicz T, Yeh J, Lindau I, Spicer WE. Summary Abstract: Chemical reaction at the In on GaAs (110) interface: A synchrotron radiation photoemission study Journal of Vacuum Science & Technology B. 5: 1080-1082. DOI: 10.1116/1.583732  0.696
1987 Kendelewicz T, Mahowald PH, McCants CE, Bartness KA, Lindau I, Spicer WE. Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases Journal of Vacuum Science & Technology B. 5: 1033-1038. DOI: 10.1116/1.583723  0.657
1987 Carey GP, Friedman DJ, Lindau I, Spicer WE. Photoemission studies of the room-temperature si/hg1-xcdxte, si/hgte, and si/cdte interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3198-3202. DOI: 10.1116/1.574837  0.632
1987 Friedman DJ, Carey GP, Lindau I, Spicer WE. Systematics of metal contacts to Hg1_xCdxTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3190-3192. DOI: 10.1116/1.574835  0.612
1987 List RS, Woicik J, Mahowald PH, Lindau I, Spicer WE. The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayers Journal of Vacuum Science and Technology. 5: 1459-1463. DOI: 10.1116/1.574621  0.717
1987 Nogami J, Friedman J, Kendelewicz T, Lindau I, Spicer WE. Summary Abstract: Binding energy shifts from alloying at metal/ll-VI compound semiconductor interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1530-1532. DOI: 10.1116/1.574599  0.593
1987 Doniach S, Chin KK, Lindau I, Spicer WE. Erratum: Microscopic metal clusters and schottky-barrier formation Physical Review Letters. 58: 2153. DOI: 10.1103/Physrevlett.58.2153  0.683
1987 Yeh JJ, Bertness KA, Cao R, Hwang J, Lindau I. Bonding characteristics of the 3°3 Ag/Si interface identified by the energy dependence of the photoionization cross section Physical Review B. 35: 3024-3027. DOI: 10.1103/PhysRevB.35.3024  0.301
1987 Bertness KA, Chiang TT, McCants CE, Mahowald PH, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Comparative uptake kinetics of N2O and O2 chemisorption on GaAs(110) Surface Science. 185: 544-558. DOI: 10.1016/S0039-6028(87)80176-0  0.618
1987 Lassailly Y, Allen JW, Ellis W, Cox L, Pate B, Fisk Z, Lindau I. Electron spectroscopy study of the heavy fermion compound U2Zn17 Journal of Magnetism and Magnetic Materials. 512-514. DOI: 10.1016/0304-8853(87)90651-2  0.331
1987 Ellis WP, Albers RC, Allen JW, Laissailly Y, Kang JS, Pate BB, Lindau I. Valence-band densities of state in NiAs Solid State Communications. 62: 591-596. DOI: 10.1016/0038-1098(87)90196-7  0.347
1987 Abbati I, Braicovich L, Carbone C, Nogami J, Lindau I, Iandelli I, Olcese G, Palenzona A. Photoemission studies of mixed valence in Yb3Si3, YbSi and Yb5Si3: Equivalent versus inequivalent Yb sites Solid State Communications. 62: 35-39. DOI: 10.1016/0038-1098(87)90079-2  0.331
1987 Allen J, Kang J, Lassailly Y, Maple M, Torikachvili M, Ellis W, Pate B, Lindau I. Electron spectroscopy study of the heavy Fermion compound URu2Si2 Solid State Communications. 61: 183-186. DOI: 10.1016/0038-1098(87)90026-3  0.339
1987 Cao R, Miyano K, Kendelewicz T, Chin KK, Lindau I, Spicer WE. Kinetics study of initial stage band bending at metal GaAs(110) interfaces Journal of Vacuum Science & Technology B. 5: 998-1002. DOI: 10.1007/978-94-009-0657-0_31  0.735
1986 Friedman DJ, Carey GP, Lindau I, Spicer WE. Effect of different cation-anion bond strengths on metal-ternary-semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe. Physical Review. B, Condensed Matter. 34: 5329-5342. PMID 9940365 DOI: 10.1103/Physrevb.34.5329  0.593
1986 Tabe M, Chiang TT, Lindau I, Spicer WE. Initial stage of thermal oxidation of the Si(111)-(7 x 7) surface. Physical Review. B, Condensed Matter. 34: 2706-2717. PMID 9939966  0.567
1986 Nogami J, Kendelewicz T, Lindau I, Spicer WE. Binding-energy shifts from alloying at metal-compound-semiconductor interfaces. Physical Review. B, Condensed Matter. 34: 669-674. PMID 9939672 DOI: 10.1103/Physrevb.34.669  0.614
1986 Kendelewicz T, List RS, Williams MD, Bertness KA, Lindau I, Spicer WE. Soft-x-ray photoemission study of Co-n-type InP(110) interface. Physical Review. B, Condensed Matter. 34: 558-562. PMID 9939662 DOI: 10.1103/Physrevb.34.558  0.652
1986 Petro WG, Kendelewicz T, Lindau I, Spicer WE. Au-GaAs(110) interface: Photoemission studies of the effects of temperature. Physical Review. B, Condensed Matter. 34: 7089-7106. PMID 9939362 DOI: 10.1103/Physrevb.34.7089  0.606
1986 Chin KK, Cao R, Kendelewicz T, Miyano K, Yeh JJ, Doniach S, Lindau I, Spicer WE. Photoemission Study of the Physical Nature of the InP Near-Surface Defect States Mrs Proceedings. 77. DOI: 10.1557/Proc-77-429  0.741
1986 Bertness KA, McCants CE, Chiang TT, Mahowald PH, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Comparison of Low Intensity Laser Enhancement of Oxygen Chemisorption on GaAs Using O 2 and N 2 O Mrs Proceedings. 75: 575. DOI: 10.1557/Proc-75-575  0.608
1986 Bertness KA, Friedman DJ, Mahowald PH, Yeh JJ, Wahi AK, Lindau I, Spicer WE. Oxygen chemisorption on GaAs(110): Surface or subsurface growth? Journal of Vacuum Science & Technology B. 4: 1102-1108. DOI: 10.1116/1.583550  0.632
1986 Friedman DJ, Carey GP, Lindau I, Spicer WE, Wilson JA. Role of Hg bonding in metal/Hg1−xCdxTe interface formation Journal of Vacuum Science & Technology B. 4: 980-985. DOI: 10.1116/1.583501  0.639
1986 Kendelewicz T, List RS, Bertness KA, Williams MD, Lindau I, Spicer WE. Photoemission study of the reactive Pd/InP(110) interface Journal of Vacuum Science & Technology B. 4: 959-965. DOI: 10.1116/1.583498  0.605
1986 Shih CK, Friedman DJ, Bertness KA, Lindau I, Spicer WE, Wilson JA. Electron beam induced hg desorption and the electronic structure of the hg depleted surface of hg1-x cdx te Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1997-2001. DOI: 10.1116/1.574015  0.616
1986 Friedman DJ, Carey GP, Shih CK, Lindau I, Spicer WE, Wilson JA. The Ag/(Hg, Cd)Te and Al/(Hg, Cd)Te interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1977-1982. DOI: 10.1116/1.574011  0.58
1986 Cao R, Yeh J, Nogami J, Lindau I. Summary Abstract: Photoemission study of the annealed Au/Si interface Journal of Vacuum Science and Technology. 4: 846-847. DOI: 10.1116/1.573789  0.365
1986 Nogami J, Williams MD, Kendelewicz T, Lindau I, Spicer WE. Chemical reaction and anion trapping at the Yb/GaAs(110) interface Journal of Vacuum Science and Technology. 4: 808-813. DOI: 10.1116/1.573780  0.633
1986 Chin KK, Kendelewicz T, McCants C, Cao R, Miyano K, Lindau I, Spicer WE. Kinetic study of Schottky barrier formation of In on GaAs(110) surface Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 969-972. DOI: 10.1116/1.573767  0.743
1986 Yeh J, Friedman DJ, Cao R, Lindau I. Summary Abstract: Oxidation study of the Si(111) surface with an ordered Ag overlayer Journal of Vacuum Science and Technology. 4: 1479-1480. DOI: 10.1116/1.573547  0.365
1986 Bertness KA, Kendelewicz T, List RS, Williams MD, Lindau I, Spicer WE. Fermi level pinning during oxidation of atomically clean n‐InP(110) Journal of Vacuum Science and Technology. 4: 1424-1426. DOI: 10.1116/1.573525  0.62
1986 Nogami J, Kendelewicz T, Lindau I, Spicer WE. Binding-energy shifts from alloying at metalcompound-semiconductor interfaces Physical Review B. 34: 669-674. DOI: 10.1103/PhysRevB.34.669  0.533
1986 Kendelewicz T, List RS, Williams MD, Bertness KA, Lindau I, Spicer WE. Soft-x-ray photoemission study of Con-type InP(110) interface Physical Review B. 34: 558-562. DOI: 10.1103/PhysRevB.34.558  0.525
1986 Friedman DJ, Carey GP, Lindau I, Spicer WE. Effect of different cation-anion bond strengths on metalternary- semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe Physical Review B. 34: 5329-5342. DOI: 10.1103/PhysRevB.34.5329  0.536
1986 Tabe M, Chiang TT, Lindau I, Spicer WE. Initial stage of thermal oxidation of the Si(111)-(7×7) surface Physical Review B. 34: 2706-2717. DOI: 10.1103/PhysRevB.34.2706  0.565
1986 Allen J, Oh S, Gunnarsson O, Schönhammer K, Maple M, Torikachvili M, Lindau I. Electronic structure of cerium and light rare-earth intermetallics Advances in Physics. 35: 275-316. DOI: 10.1080/00018738600101901  0.319
1986 Friedman DJ, Carey GP, Shih CK, Lindau I, Spicer WE, Wilson JA. Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface Applied Physics Letters. 48: 44-46. DOI: 10.1063/1.96756  0.577
1986 Kendelewicz T, Williams MD, Chin KK, McCants CE, List RS, Lindau I, Spicer WE. Temperature-dependent pinning at the Al/n-GaAs(110) interface Applied Physics Letters. 48: 919-921. DOI: 10.1063/1.96658  0.711
1986 Pennino UD, Nannarone S, Braicovich L, Abbati I, Rossi G, Lindau I. Optical corrections in measurements of photoionization cross sections from solids in the soft X-ray range Journal of Electron Spectroscopy and Related Phenomena. 37: 389-393. DOI: 10.1016/0368-2048(86)80057-3  0.511
1986 Abbati I, Braicovich L, Carbone C, Nogami J, Lindau I, Del Pennino U. Synchrotron radiation study of the photoionization cross sections for the whole valence band of 2H-MoS2 Journal of Electron Spectroscopy and Related Phenomena. 40: 353-362. DOI: 10.1016/0368-2048(86)80045-7  0.328
1986 Friedman DJ, Carbone C, Bertness KA, Lindau I. Resonant photoemission at the 5p threshold in La, Pr, Sm and Tb Journal of Electron Spectroscopy and Related Phenomena. 41: 59-66. DOI: 10.1016/0368-2048(86)80031-7  0.345
1986 Lindau I. Concluding remarks - international conference on the formation of semiconductor interfaces Surface Science Letters. 168: 860-864. DOI: 10.1016/0167-2584(86)90513-X  0.323
1986 Carbone C, Nogami J, Lindau I, Abbati I, Braicovich L, Johansson LI, Majni G. X-ray absorption spectroscopy of platinum silicides: The L2,3 and M2,3 edges of platinum Thin Solid Films. 140: 105-114. DOI: 10.1016/0040-6090(86)90165-3  0.305
1986 Spicer WE, Kendelewicz T, Newman N, Chin KK, Lindau I. The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments Surface Science. 168: 240-259. DOI: 10.1016/0039-6028(86)90855-1  0.717
1986 Braicovich L, Abbati I, Carbone C, Nogami J, Lindau I. Synchrotron radiation studies of the effect of thermal treatment on the Si(111)-Yb interfaces Surface Science. 168: 193-203. DOI: 10.1016/0039-6028(86)90850-2  0.35
1986 Williams MD, Nogami J, Kendelewicz T, List RS, Bertness KA, Lindau I, Spicer WE. Yb/GaAs (110): The pinning behavior of the rare earth GaAs interface Solid State Communications. 58: 15-18. DOI: 10.1016/0038-1098(86)90877-X  0.645
1986 Abbati I, Braicovich L, Carbone C, Nogami J, Lindau I, Iandelli A, Olcese GL, Palenzona A. Photoemission studies of Si(1 1 1)-Yb interfaces: What can be learned from Yb mixed valence Solid State Communications. 60: 595-598. DOI: 10.1016/0038-1098(86)90277-2  0.393
1985 Kendelewicz T, Williams MD, Petro WG, Lindau I, Spicer WE. Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfaces. Physical Review. B, Condensed Matter. 32: 3758-3765. PMID 9937525 DOI: 10.1103/Physrevb.32.3758  0.598
1985 Chin KK, Pan SH, Mo D, Mahowald P, Newman N, Lindau I, Spicer WE. Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). Physical Review. B, Condensed Matter. 32: 918-923. PMID 9937100 DOI: 10.1103/Physrevb.32.918  0.691
1985 Chin KK, Lindau I. Possibility of incongruous interface behavior of In on GaAs(110). Physical Review. B, Condensed Matter. 32: 6902-6903. PMID 9936804 DOI: 10.1103/Physrevb.32.6902  0.58
1985 Kendelewicz T, Williams MD, Petro WG, Lindau I, Spicer WE. Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP(110). Physical Review. B, Condensed Matter. 31: 6503-6513. PMID 9935530 DOI: 10.1103/Physrevb.31.6503  0.58
1985 Yeh JJ, Friedman DJ, Cao R, Hwang J, Nogami J, Lindau I. The Oxidation Behavior of the √3×√3 Ag and Au/Si(111) Surfaces at Room Temperature Studied by Photoemission Mrs Proceedings. 54: 605. DOI: 10.1557/Proc-54-605  0.364
1985 Chin KK, Cao R, Miyano K, McCants CE, Lindau I, Spicer WE. An Investigation Of The Cause Of Initial Band Bending Of A Cleaved Clean n-GaAs(llO) Surface Mrs Proceedings. 54. DOI: 10.1557/Proc-54-341  0.753
1985 Williams MD, Kendelewicz T, Newman N, Lindau I, Spicer WE. Summary Abstract: Ni and Pd Schottky barriers on GaAs(110) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 3: 977-978. DOI: 10.1116/1.573368  0.555
1985 Carbone C, Nogami J, Lindau I. Summary Abstract: The silicon/gadolinium interface at room temperature Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 972-973. DOI: 10.1116/1.573364  0.318
1985 List RS, Kendelewicz T, Williams MD, Lindau I, Spicer WE. The reactive Cr/InP and Mn/InP interfaces Journal of Vacuum Science and Technology. 3: 1002-1006. DOI: 10.1116/1.573238  0.608
1985 Silberman JA, Laser D, Shih C, Friedman DJ, Lindau I, Spicer WE, Wilson JA. Angle‐resolved photoemission spectroscopy of Hg1−xCdxTe Journal of Vacuum Science and Technology. 3: 233-237. DOI: 10.1116/1.573209  0.622
1985 Silberman JA, Laser D, Lindau I, Spicer WE, Wilson JA. Comparative study of activated oxygen uptake on HgTe, Hg0.69Cd0.31Te, and CdTe Journal of Vacuum Science and Technology. 3: 222-225. DOI: 10.1116/1.573206  0.578
1985 Jupiter PJ, Viescas AJ, Carbone C, Lindau I, Spicer WE. Changes in O2 and CO surface chemistry with increasing carbon concentration on W(100) Journal of Vacuum Science and Technology. 3: 1517-1520. DOI: 10.1116/1.573154  0.621
1985 Skeath P, Su CY, Lindau I, Spicer WE. Comparative study of Fermi energy pinning and adatom bond character: Antimony versus the column 3 elements (Al, Ga, In) on GaAs (110) and GaSb (110) Journal of Applied Physics. 57: 5089-5092. DOI: 10.1063/1.335293  0.657
1985 Abbati I, Braicovich L, Pennino UD, Iandelli A, Olcese GL, Palenzona A, Carbone C, Yeh JJ, Lindau I. Surface and bulk valence in Yb3Si5 Physica B-Condensed Matter. 130: 141-143. DOI: 10.1016/0378-4363(85)90206-2  0.427
1985 Lindau I. Free electron lasers applied to VUV and soft X-ray physics of semiconductors Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 239: 419-420. DOI: 10.1016/0168-9002(85)90016-6  0.357
1985 Rossi G, Nogami J, Lindau I, Yeh JJ. The Si(111)-7×7/Eu interface investigated by means of electron spectroscopies Surface Science Letters. 152: 1247-1254. DOI: 10.1016/0167-2584(85)90216-6  0.595
1985 Abbati I, Braicovich L, Pennino UD, Nannarone S, Rossi G, Lindau I. Core photoemission study of the early formation stage of Si(111)−Ba interface Surface Science. 162: 645-650. DOI: 10.1016/0039-6028(85)90961-6  0.564
1985 Lindau I, Kendelewicz T, Newman N, List R, Williams M, Spicer W. Electronic properties of metal/III–V semiconductor interfaces Surface Science. 162: 591-604. DOI: 10.1016/0039-6028(85)90953-7  0.635
1985 Rossi G, Yeh JJ, Lindau I, Nogami J. Strong 5p hole - 5d electron interaction in the electron emission processes for Eu and Yb metals Surface Science. 152: 743-748. DOI: 10.1016/0039-6028(85)90483-2  0.549
1984 Kendelewicz T, Petro WG, Lindau I, Spicer WE. Systematics of interfacial chemical reactions on InP(110) Journal of Vacuum Science & Technology B. 2: 453-458. DOI: 10.1116/1.582894  0.648
1984 Silberman JA, Laser D, Lindau I, Spicer WE, Wilson JA. Summary Abstract: Activated oxygen uptake on HgTe, CdTe, and Hg0.69Cd0.31Te Journal of Vacuum Science & Technology B. 2: 589-590. DOI: 10.1116/1.582849  0.543
1984 Kendelewicz T, Petro WG, Lindau I, Spicer WE. Summary Abstract: Unusual interfacial kinetics and Schottky barrier formation of thallium on the GaAs(110) surface Journal of Vacuum Science & Technology B. 2: 582-583. DOI: 10.1116/1.582842  0.632
1984 Petro WG, Kendelewicz T, Babalola IA, Lindau I, Spicer WE. Noble metal interactions with the InP(110) surface Journal of Vacuum Science and Technology. 2: 835-838. DOI: 10.1116/1.572518  0.646
1984 Yeh JJ, Nogami J, Rossi G, Lindau I. Resonance of 4f partial photoionization cross section of Yb and Eu near the 5p threshold Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 969-972. DOI: 10.1116/1.572493  0.541
1984 Pate BB, Oshima M, Silberman JA, Rossi G, Lindau I, Spicer WE. Carbon 1s studies of diamond(111): Surface shifts, hydrogenation, and electron escape lengths Journal of Vacuum Science and Technology. 2: 957-960. DOI: 10.1116/1.572490  0.703
1984 Hecht MH, Grunthaner FJ, Pianetta P, Lindau I, Johansson LI. Electron Escape Depth Variation in thin Si02 Films Measured with Variable Photon Energy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 584-587. DOI: 10.1116/1.572450  0.553
1984 Kendelewicz T, Petro WG, Lindau I, Spicer WE. The interaction of Pd with the InP(110) surface Journal of Vacuum Science and Technology. 2: 542-545. DOI: 10.1116/1.572441  0.638
1984 Kendelewicz T, Petro WG, Lindau I, Spicer WE. Interaction of Al overlayers with the InP(110) surface Physical Review B. 30: 5800-5810. DOI: 10.1103/Physrevb.30.5800  0.632
1984 Kendelewicz T, List RS, Williams MD, Lindau I, Spicer WE. Absence of core-exciton-induced resonant photoemission from InP(110) Physical Review B. 30: 2263-2265. DOI: 10.1103/Physrevb.30.2263  0.557
1984 Oh SJ, Allen JW, Lindau I. Soft-x-ray resonant-photoemission study of mixed-valence TmSe Physical Review B. 30: 1937-1944. DOI: 10.1103/Physrevb.30.1937  0.339
1984 Babalola IA, Petro WG, Kendelewicz T, Lindau I, Spicer WE. Ag-InP(110) interface: Photoemission studies of interfacial reactions and Schottky-barrier formation Physical Review B. 29: 6614-6622. DOI: 10.1103/Physrevb.29.6614  0.616
1984 Rossi G, Yeh JJ, Lindau I, Nogami J. Autoionization decay following a strong 5p-hole-5d-electron interaction in fcc Yb metal Physical Review B. 29: 5989-5991. DOI: 10.1103/Physrevb.29.5989  0.528
1984 Allen JW, Oh S-, Lindau I, Johansson LI. Resonant enhancement of rare-earth valence-band photoemission at3dabsorption edges Physical Review B. 29: 5927-5930. DOI: 10.1103/Physrevb.29.5927  0.306
1984 Stefan PM, Shek ML, Lindau I, Spicer WE, Johansson LI, Herman F, Kasowski RV, Brogen G. Photoemission study of WC(0001) Physical Review B. 29: 5423-5444. DOI: 10.1103/Physrevb.29.5423  0.581
1984 Kendelewicz T, Petro WG, Lindau I, Spicer WE. Chemical reactions at the noble and near‐noble metal/InP interfaces: Comparison to Si and GaAs Applied Physics Letters. 44: 1066-1068. DOI: 10.1063/1.94645  0.625
1984 Kendelewicz T, Petro WG, Pan SH, Williams MD, Lindau I, Spicer WE. Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface Applied Physics Letters. 44: 113-115. DOI: 10.1063/1.94568  0.624
1984 Hecht MH, Viescas AJ, Lindau I, Allen JW, Johansson LI. Intrinsic surface binding energy shifts in Yb metal Journal of Electron Spectroscopy and Related Phenomena. 34: 343-353. DOI: 10.1016/0368-2048(84)80048-1  0.402
1984 Bachrach RZ, Bringans RD, Hower N, Lindau I, Pate BB, Pianetta P, Swartz LE, Tatchyn R. Design process and modeling studies of SSRL beam line wunder Nuclear Instruments and Methods in Physics Research. 222: 70-79. DOI: 10.1016/0167-5087(84)90506-4  0.445
1984 Williams MD, Petro WG, Kendelewicz T, Pan SH, Lindau I, Spicer WE. An exploratory study of the reactive Ni-GaAs (1 1 0) interface Solid State Communications. 51: 819-822. DOI: 10.1016/0038-1098(84)90475-7  0.671
1983 Pan SH, Kendelewicz T, Petru WG, Williams MD, Lindau I, Spicer WE. Photoemission Studies Of The CU-GaAs(ll0) Interface Formation * Mrs Proceedings. 25. DOI: 10.1557/Proc-25-335  0.629
1983 Petro WG, Kendelewicz T, Babalola IA, Lindau I, Spicer WE. Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation Mrs Proceedings. 25: 329. DOI: 10.1557/Proc-25-329  0.585
1983 Kendelewicz T, Petro WG, Williams MD, Pan SH, Lindau I, Spicer WE. Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces * Mrs Proceedings. 25: 323. DOI: 10.1557/Proc-25-323  0.577
1983 Kendelewicz T, Petro WG, Babalola IA, Silberman JA, Lindau I, Spicer WE. Room temperature exchange reaction at the Al–InP(110) interface: Soft x‐ray photoemission studies Journal of Vacuum Science & Technology B. 1: 623-627. DOI: 10.1116/1.582611  0.629
1983 Lü ZM, Petro WG, Mahowald PH, Oshima M, Lindau I, Spicer WE. The effect of surface oxygen on the intermixing and Schottky barrier at GaAs(110)–Au interfaces Journal of Vacuum Science & Technology B. 1: 598-601. DOI: 10.1116/1.582605  0.639
1983 Pan SH, Mo D, Petro WG, Lindau I, Spicer WE. Schottky barrier formation and intermixing of noble metals on GaAs(110) Journal of Vacuum Science & Technology B. 1: 593-597. DOI: 10.1116/1.582604  0.628
1983 Kendelewicz T, Rossi G, Petro WG, Babalola IA, Lindau I, Spicer WE. Similarities in chemical intermixing at the Cu/InP and Cu/Si interfaces Journal of Vacuum Science & Technology B. 1: 564-569. DOI: 10.1116/1.582599  0.723
1983 Rossi G, Nogami J, Yeh JJ, Lindau I. CHEMICAL REACTION AT THE ANNEALED Si/Yb INTERFACE Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 530-532. DOI: 10.1116/1.582593  0.547
1983 Silberman JA, Laser D, Lindau I, Spicer WE, Wilson JA. Initial stages of oxide formation on HgCdTe exposed to activated oxygen Journal of Vacuum Science and Technology. 1: 1706-1711. DOI: 10.1116/1.572262  0.618
1983 Spicer WE, Silberman JA, Lindau I, Chen A‐, Sher A, Wilson JA. Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds Journal of Vacuum Science and Technology. 1: 1735-1743. DOI: 10.1116/1.572206  0.659
1983 Rossi G, Kendelewicz T, Lindau I, Spicer WE. The Si(111)/Cu interface studied with surface sensitive techniques Journal of Vacuum Science and Technology. 1: 987-990. DOI: 10.1116/1.572019  0.718
1983 Rossi G, Nogami J, Lindau I, Braicovich L, Abbati I, del Pennino U, Nannarone S. First spectroscopic investigation of the Yb/Si interface at room temperature Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 781-784. DOI: 10.1116/1.571999  0.604
1983 Babalola IA, Petro WG, Kendelewicz T, Lindau I, Spicer WE. Photoemission studies of the Au–InP(110) interface Journal of Vacuum Science and Technology. 1: 762-765. DOI: 10.1116/1.571995  0.653
1983 Petro WG, Babalola IA, Kendelewicz T, Lindau I, Spicer WE. Photoemission studies of the effect of temperature on the Au–GaAs(110) interface Journal of Vacuum Science and Technology. 1: 1181-1184. DOI: 10.1116/1.571893  0.651
1983 Abbati I, Braicovich L, Rossi G, Lindau I, Pennino UD, Nannarone S. Solid-state effects on the valence-band 4d-photoionization cross sections at the Cooper minimum Physical Review Letters. 50: 1799-1802. DOI: 10.1103/Physrevlett.50.1799  0.509
1983 Skeath P, Lindau I, Su CY, Spicer WE. Chemical bonding, adatom-adatom interaction, and replacement reaction of column-3 metals on GaAs(110) Physical Review B. 28: 7051-7067. DOI: 10.1103/Physrevb.28.7051  0.582
1983 Kendelewicz T, Petro WG, Lindau I, Spicer WE. Evidence of palladium phosphide formation at the Pd/InP(110) interface Physical Review B. 28: 3618-3621. DOI: 10.1103/Physrevb.28.3618  0.552
1983 Rossi G, Lindau I. Compound formation and bonding configuration at the Si-Cu interface Physical Review B. 28: 3597-3600. DOI: 10.1103/Physrevb.28.3597  0.576
1983 Rossi G, Lindau I, Braicovich L, Abbati I. Cooper-minimum effects in the photoionization cross sections of 4 d and 5 d electrons in solid compounds Physical Review B. 28: 3031-3042. DOI: 10.1103/Physrevb.28.3031  0.557
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on Cu adlayers on Pt(111) Physical Review B. 27: 7301-7312. DOI: 10.1103/Physrevb.27.7301  0.56
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. Electronic structure of different Pt-Cu surfaces Physical Review B. 27: 7288-7300. DOI: 10.1103/Physrevb.27.7288  0.617
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. Photoemission study of the adsorption of Cu on Pt(111) Physical Review B. 27: 7277-7287. DOI: 10.1103/Physrevb.27.7277  0.606
1983 Skeath P, Su CY, Harrison WA, Lindau I, Spicer WE. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds Physical Review B. 27: 6246-6262. DOI: 10.1103/Physrevb.27.6246  0.642
1983 Rossi G, Jaeger R, Stöhr J, Kendelewicz T, Lindau I. L-edge x-ray absorption resonances in palladium silicides and palladium metal Physical Review B. 27: 5154-5157. DOI: 10.1103/Physrevb.27.5154  0.528
1983 Kendelewicz T, Petro WG, Babalola IA, Silberman JA, Lindau I, Spicer WE. Photoemission studies of the Cu-InP(110) interface Physical Review B. 27: 3366-3373. DOI: 10.1103/Physrevb.27.3366  0.59
1983 Weissman-Wenocur DL, Stefan PM, Pate BB, Shek ML, Lindau I, Spicer WE. Photoemission study of Au overlayers on Pd(111) and the formation of a Pd-Au(111) alloy surface Physical Review B. 27: 3308-3317. DOI: 10.1103/Physrevb.27.3308  0.568
1983 Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE, Pennino Ud, Nannarone S. Exploiting photon energy dependence in photoemission from Si(111)-Mo interface Physica B-Condensed Matter. 117: 794-797. DOI: 10.1016/0378-4363(83)90656-3  0.708
1983 Pate BB, Waclawski BJ, Stefan PM, Binns C, Ohta T, Hecht MH, Jupiter PJ, Shek ML, Pierce DT, Swanson N, Celotta RJ, Rossi G, Lindau I, Spicer WE. The diamond (111) surface: A dilemma resolved Physica B+C. 117: 783-785. DOI: 10.1016/0378-4363(83)90652-6  0.726
1983 Spicer WE, Silberman JA, Morgen P, Lindau I, Wilson JA, Sher A. Unusual behavior of Hgl−xCdxTe and its explanation☆ Physica B-Condensed Matter. 60-62. DOI: 10.1016/0378-4363(83)90440-0  0.574
1983 Su CY, Lindau I, Chye PW, Oh S-, Spicer WE. Photoemission studies of clean and oxidized Cs Journal of Electron Spectroscopy and Related Phenomena. 31: 221-259. DOI: 10.1016/0368-2048(83)85073-7  0.595
1983 Bachrach RZ, Swartz LE, Hagstrom SB, Lindau I, Hecht MH, Spicer WE. SSRL beam line wunder: Design and planning Nuclear Instruments and Methods in Physics Research. 208: 105-112. DOI: 10.1016/0167-5087(83)91109-2  0.55
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on PtCu surfaces Surface Science Letters. 134. DOI: 10.1016/0167-2584(83)90724-7  0.607
1983 Apai G, Baetzold RC, Jupiter PJ, Viescas AJ, Lindau I. Influence of acceptor and donor adsorbates (CO, K, NH3) on Pt surface core-level shifts Surface Science. 134: 122-134. DOI: 10.1016/0167-2584(83)90703-X  0.362
1983 Stöhr J, Jaeger R, Kendelewicz T, Rossi G, Lindau I. Structural studies of metal-semiconductor interfaces by means of surface extended X-ray absorption edge fine structure Thin Solid Films. 104: 15. DOI: 10.1016/0040-6090(83)90544-8  0.572
1983 Perfetti P, Rossi G, Lindau I, Bisi O. The Ge/Au interface investigated with photoemission at the cooper minimum Surface Science Letters. 124: 19-24. DOI: 10.1016/0039-6028(83)90786-0  0.584
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on PtCu surfaces: III. CO on PtCu(111) Surface Science. 134: 438-448. DOI: 10.1016/0039-6028(83)90433-8  0.633
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. Co chemisorption on PtCu surfaces II. (1 × 1)-CO/Pt0.98Cu0.02(110) Surface Science. 134: 427-437. DOI: 10.1016/0039-6028(83)90432-6  0.618
1983 Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on PtCu surfaces. I: CO on (1×3) Pt0.98Cu0.02(110) Surface Science. 134: 399-426. DOI: 10.1016/0039-6028(83)90431-4  0.626
1983 Ling DT, Miller JN, Weissman DL, Pianetta P, Stefan PM, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) III. Cu(100) + p(2 x 2)S Surface Science. 124: 175-187. DOI: 10.1016/0039-6028(83)90343-6  0.713
1983 Stöhr J, Jaeger R, Rossi G, Kendelewicz T, Lindau I. Structure of the Ag on Si(111) 7 × 7 interface by means of surface exafs Surface Science. 134: 813-835. DOI: 10.1016/0039-6028(83)90076-6  0.557
1983 Weissman-Wenocur DL, Shek ML, Stefan PM, Lindau I, Spicer WE. The temperature dependence of the interaction of oxygen with Pd(111); A study by photoemission and auger spectroscopy Surface Science. 127: 513-525. DOI: 10.1016/0039-6028(83)90044-4  0.6
1983 Oshima M, Pate BB, Lu ZM, Jupiter PJ, Lindau I, Spicer WE. Photoemission studies of a clean and oxidized niobium-aluminum alloy using synchrotron radiation Solid State Communications. 46: 815-818. DOI: 10.1016/0038-1098(83)90009-1  0.597
1982 Stohr J, Jaeger R, Kendelewicz T, Rossi G, Lindau I. Structural Studies of Metal-Semiconductor Interfaces by Means of Surface Extended X-Ray Absorption Edge Fine Structure Mrs Proceedings. 18: 15. DOI: 10.1557/Proc-18-15  0.572
1982 Shek ML, Stefan PM, Weissman‐Wenocur DL, Pate BB, Lindau I, Spicer WE. Erratum: Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination [J. Vac. Sci. Technol. 18, 533 (1981)] Journal of Vacuum Science and Technology. 21: 709-709. DOI: 10.1116/1.571818  0.622
1982 Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies Journal of Vacuum Science and Technology. 21: 617-618. DOI: 10.1116/1.571798  0.702
1982 Petro WG, Babalola IA, Skeath P, Su CY, Hino I, Lindau I, Spicer WE. High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface Journal of Vacuum Science and Technology. 21: 585-589. DOI: 10.1116/1.571791  0.661
1982 Pate BB, Hecht MH, Binns C, Lindau I, Spicer WE. Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen Journal of Vacuum Science and Technology. 21: 364-367. DOI: 10.1116/1.571781  0.615
1982 Ling DT, Miller JN, Pianetta P, Weissman DL, Lindau I, Spicer WE. Angle‐resolved photoemission studies of oxide formation on Cu(100) Journal of Vacuum Science and Technology. 21: 47-49. DOI: 10.1116/1.571734  0.682
1982 Morgen P, Silberman JA, Lindau I, Spicer WE, Wilson JA. AES sputter profiles of anodic oxide films on (Hg,Cd)Te Journal of Vacuum Science and Technology. 21: 161-163. DOI: 10.1116/1.571703  0.576
1982 Silberman JA, Morgen P, Lindau I, Spicer WE, Wilson JA. Room temperature stability of cleaved Hg1−xCdxTe Journal of Vacuum Science and Technology. 21: 154-156. DOI: 10.1116/1.571701  0.609
1982 Spicer WE, Silberman JA, Morgen P, Lindau I, Wilson JA. Surface And Interfaces Of Hgcdte. What Can We Learn From 3-5'S? What Is Unique With Hgcdte? Journal of Vacuum Science and Technology. 21: 149-153. DOI: 10.1116/1.571699  0.633
1982 Silberman JA, Morgen P, Lindau I, Spicer WE, Wilson JA. UPS study of the electronic structure of Hg1−xCdx Te: Breakdown of the virtual crystal approximation Journal of Vacuum Science and Technology. 21: 142-145. DOI: 10.1116/1.571697  0.634
1982 Silberman JA, Morgen P, Lindau I, Spicer WE, Chen A‐, Sher A, Wilson JA. Summary Abstract: Cation bonds in Hg1−xCdxTe Journal of Vacuum Science and Technology. 21: 467-468. DOI: 10.1116/1.571680  0.545
1982 Abbati I, Rossi G, Calliari L, Braicovich L, Lindau I, Spicer WE. Interaction of oxygen with silicon d‐metal interfaces: A photoemission investigation Journal of Vacuum Science and Technology. 21: 409-412. DOI: 10.1116/1.571666  0.714
1982 Petro WG, Hino I, Eglash S, Lindau I, Su CY, Spicer WE. Effect of low‐intensity laser radiation during oxidation of the GaAs(110) surface Journal of Vacuum Science and Technology. 21: 405-408. DOI: 10.1116/1.571665  0.613
1982 Skeath P, Su CY, Lindau I, Spicer WE. Summary Abstract: Structure of ordered Sb overlayers on GaAs(110) Journal of Vacuum Science and Technology. 20: 779-780. DOI: 10.1116/1.571458  0.572
1982 Stefan PM, Shek ML, Lindau I, Spicer WE, Herman F, Johansson LI, Brogren G. Summary Abstract: Angle‐resolved photoemission results from WC(0001) Journal of Vacuum Science and Technology. 20: 622-623. DOI: 10.1116/1.571407  0.57
1982 Shek ML, Stefan PM, Lindau I, Spicer WE. Summary Abstract: Metal core level shifts induced by CO chemisorption Journal of Vacuum Science and Technology. 20: 879-880. DOI: 10.1116/1.571374  0.586
1982 Spicer WE, Silberman JA, Morgen J, Lindau I, Wilson JA, Chen A, Sher A. Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy,Hg1−xCdxTe Physical Review Letters. 49: 948-951. DOI: 10.1103/Physrevlett.49.948  0.567
1982 Lawrence JM, Allen JW, Oh SJ, Lindau I. Resonant photoemission in CeAl, Ce Si 2 , and La Si 2 Physical Review B. 26: 2362-2370. DOI: 10.1103/Physrevb.26.2362  0.362
1982 Su CY, Lindau I, Chye PW, Skeath PR, Spicer WE. Photoemission studies of the interaction of oxygen with GaAs(110) Physical Review B. 25: 4045-4068. DOI: 10.1103/Physrevb.25.4045  0.581
1982 Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Si(111)-Pt interface at room temperature: A synchrotron radiation photoemission study Physical Review B. 25: 3627-3636. DOI: 10.1103/Physrevb.25.3627  0.69
1982 Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Ge-Ag interface at room temperature: An energy-dependent photoemission study Physical Review B. 25: 3619-3626. DOI: 10.1103/Physrevb.25.3619  0.684
1982 Bisi O, Calandra C, Braicovich L, Abbati I, Rossi G, Lindau I, Spicer WE. Electronic properties of metal-rich Au-Si compounds and interfaces Journal of Physics C: Solid State Physics. 15: 4707-4716. DOI: 10.1088/0022-3719/15/22/016  0.718
1982 Miller JN, Lindau I, Stefan PM, Weissman DL, Shek ML, Spicer WE. Photoemission studies of clean and oxidized Nb and Nb3Sn Journal of Applied Physics. 53: 3267-3271. DOI: 10.1063/1.331030  0.644
1982 Rossi G, Abbati I, Lindau I, Spicer WE. Intermixing at the early stage of the Si(111)/Ag interface growth Applications of Surface Science. 11: 348-354. DOI: 10.1016/0378-5963(82)90081-2  0.703
1982 Chen DS, Lindau I, Hecht MH, Viescas AJ, Nogami J, Spicer WE. Surface studies of the tungsten dispenser cathode Applications of Surface Science. 13: 321-328. DOI: 10.1016/0378-5963(82)90001-0  0.617
1982 Miller JN, Lindau I, Spicer WE. A photoemission study of clean and oxidized Nb3Sn Physics Letters A. 88: 97-99. DOI: 10.1016/0375-9601(82)90601-6  0.596
1982 Shek ML, Stefan PM, Weissman-Wenocur DL, Pate BB, Lindau I, Spicer WE, Sundaram VS. Surface segregation and surface electronic interactions in PtCu Surface Science Letters. 115. DOI: 10.1016/0167-2584(82)90533-3  0.644
1982 Shek ML, Stefan PM, Binns C, Lindau I, Spicer WE. Chemisorption-induced Pt 4f surface core level shifts Surface Science. 115. DOI: 10.1016/0167-2584(82)90532-1  0.624
1982 Eglash S, Spicer WE, Lindau I. Reply to “surface photovoltage measurements and Fermi level pinning: comments on ‘development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds’” Thin Solid Films. 89. DOI: 10.1016/0040-6090(82)90329-7  0.599
1982 Spicer WE, Eglash S, Lindau I, Su CY, Skeath PR. Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds Thin Solid Films. 89: 447-460. DOI: 10.1016/0040-6090(82)90325-X  0.691
1982 Shek ML, Stefan PM, Weissman-Wenocur DL, Pate BB, Lindau I, Spicer WE, Sundaram VS. Surface science lettersSurface segregation and surface electronic interactions in PtCu Surface Science. 115. DOI: 10.1016/0039-6028(82)90656-2  0.644
1982 Shek ML, Stefan PM, Binns C, Lindau I, Spicer WE. Surface science lettersChemisorption-induced Pt 4f surface core level shifts Surface Science. 115. DOI: 10.1016/0039-6028(82)90655-0  0.628
1982 Rossi G, Caliari L, Abbati I, Braicovich L, Lindau I, Spicer WE. Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure Surface Science. 116. DOI: 10.1016/0039-6028(82)90422-8  0.714
1982 Su CY, Lindau I, Skeath PR, Hino I, Spicer WE. Photoemission studies of As and its room-temperature oxidation Surface Science Letters. 118: 257-266. DOI: 10.1016/0039-6028(82)90027-9  0.6
1982 Su CY, Skeath PR, Lindau I, Spicer WE. Photoemission studies of room-temperature oxidized Ga surfaces☆ Surface Science. 118: 248-256. DOI: 10.1016/0039-6028(82)90026-7  0.608
1982 Binns C, Norris C, Lindau I, Shek ML, Pate B, Stefan PM, Spicer WE. Magnetic behaviour of ultra-thin iron overlayers on palladium (111) Solid State Communications. 43: 853-855. DOI: 10.1016/0038-1098(82)90854-7  0.556
1982 Skeath P, Su CY, Lindau I, Spicer WE. Experimental determination of the bonding of column 3 and 5 elements on GaAs Journal of Crystal Growth. 56: 505-510. DOI: 10.1016/0022-0248(82)90472-9  0.59
1982 Morgen P, Silberman JA, Lindau I, Spicer WE, Wilson JA. Oxidation of Hg 1−x Cd x Te studied with surface sensitive techniques Journal of Electronic Materials. 11: 597-610. DOI: 10.1007/Bf02672386  0.622
1981 Skeath P, Lindau I, Su CY, Spicer WE. Models of column III and V elements on GaAs (110): Application to MBE Journal of Vacuum Science and Technology. 19: 556-560. DOI: 10.1116/1.571125  0.59
1981 Abbati I, Rossi G, Lindau I, Spicer WE. Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case Journal of Vacuum Science and Technology. 19: 636-640. DOI: 10.1116/1.571077  0.693
1981 Pate BB, Stefan PM, Binns C, Jupiter PJ, Shek ML, Lindau I, Spicer WE. Formation of surface states on the (111) surface of diamond Journal of Vacuum Science and Technology. 19: 349-354. DOI: 10.1116/1.571062  0.656
1981 Perfetti P, Nannarone S, Patella F, Quaresima C, Cerrina F, Capozi M, Savoia A, Lindau I. Low energy electron loss spectroscopy of Si–Ge interfaces Journal of Vacuum Science and Technology. 19: 319-322. DOI: 10.1116/1.571056  0.416
1981 Su CY, Skeath PR, Lindau I, Spicer WE. Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface Journal of Vacuum Science and Technology. 19: 481-486. DOI: 10.1116/1.571043  0.663
1981 Su CY, Skeath PR, Lindau I, Spicer WE. Oxidation of Si(111), 7×7 and 2×1: A comparison Journal of Vacuum Science and Technology. 18: 843-846. DOI: 10.1116/1.570974  0.64
1981 Shek ML, Stefan PM, Weissman‐Wenocur DL, Pate BB, Lindau I, Spicer WE. Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination Journal of Vacuum Science and Technology. 18: 533-536. DOI: 10.1116/1.570805  0.63
1981 Miller JN, Ling DT, Stefan PM, Weissman DL, Shek ML, Lindau I, Spicer WE. Synchrotron radiation studies of CO and H 2 O adsorbed on Pt Physical Review B. 24: 1917-1926. DOI: 10.1103/Physrevb.24.1917  0.551
1981 Miller JN, Lindau I, Spicer WE. Absence of band-gap surface states on clean amorphous silicon Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 43: 273-282. DOI: 10.1080/13642818108221898  0.66
1981 Skeath P, Su CY, Hino I, Lindau I, Spicer WE. New Fermi energy pinning behavior of Au on GaAs (110) suggesting increased Schottky‐barrier heights on n‐type GaAs Applied Physics Letters. 39: 349-351. DOI: 10.1063/1.92718  0.652
1981 Abbati I, Rossi G, Braicovich L, Lindau I, Spicer WE, Michelis BD. Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds Journal of Applied Physics. 52: 6994-6996. DOI: 10.1063/1.328665  0.701
1981 Abbati I, Rossi G, Braicovich L, Lindau I, Spicer WE. Reactive germanium/transition metal interfaces investigated with synchrotron radiation photoemission: Ge/Ni and Ge/Pd Applications of Surface Science. 9: 243-249. DOI: 10.1016/0378-5963(81)90040-4  0.714
1981 Spicer WE, Lindau I, Skeath PR, Su CY. The unified model for Schottky barrier formation and MOS interface states in 3–5 compounds☆ Applications of Surface Science. 9: 83-91. DOI: 10.1016/0378-5963(81)90027-1  0.651
1981 Johansson LI, Allen JW, Lindau I. Photoemission study of Tm metal Physics Letters A. 86: 442-444. DOI: 10.1016/0375-9601(81)90358-3  0.36
1981 Su CY, Skeath PR, Lindau I, Spicer WE. The nature of the 7×7 reconstruction of Si(111): As revealed by changes in oxygen sorption from 2 × 1 to 7×7☆ Surface Science Letters. 107. DOI: 10.1016/0167-2584(81)90242-5  0.616
1981 Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages Surface Science Letters. 112. DOI: 10.1016/0167-2584(81)90027-X  0.676
1981 Miller JN, Lindau I, Spicer WE. Photoemission of adsorbed CO and H2O on Pt: Valence band studies Surface Science. 111: 595-608. DOI: 10.1016/0039-6028(81)90411-8  0.626
1981 Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Nature of the valence states in silicon transition metal interfaces Solid State Communications. 39: 195-198. DOI: 10.1016/0038-1098(81)90655-4  0.716
1981 Skeath P, Su CY, Lindau I, Spicer WE. Bonding of column 3 and 5 atoms on GaAs (110) Solid State Communications. 40: 873-876. DOI: 10.1016/0038-1098(81)90174-5  0.612
1980 Ling D, Lindau I, Miller J, Spicer W. Surface Composition of Copper-Nickel Alloys Astm Special Technical Publications. 66-80. DOI: 10.1520/Stp38653S  0.62
1980 Su CY, Lindau I, Skeath PR, Chye PW, Spicer WE. Oxygen adsorption on the GaAs(110) surface Journal of Vacuum Science and Technology. 17: 936-941. DOI: 10.1116/1.570620  0.631
1980 Abbati I, Braicovich L, Franciosi A, Lindau I, Skeath PR, Su CY, Spicer WE. Photoemission investigation of the temperature effect on Si–Au interfaces Journal of Vacuum Science and Technology. 17: 930-935. DOI: 10.1116/1.570619  0.642
1980 Miller JN, Schwarz SA, Lindau I, Spicer WE, Michelis BD, Abbati I, Braicovich L. Si–Pd and Si–Pt interfaces Journal of Vacuum Science and Technology. 17: 920-923. DOI: 10.1116/1.570617  0.621
1980 Skeath P, Su CY, Lindau I, Spicer WE. Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction Journal of Vacuum Science and Technology. 17: 874-879. DOI: 10.1116/1.570608  0.639
1980 Pate BB, Spicer WE, Ohta T, Lindau I. Electronic structure of the diamond (111) 1×1 surface: Valence‐band structure, band bending, and band gap states Journal of Vacuum Science and Technology. 17: 1087-1093. DOI: 10.1116/1.570596  0.668
1980 Spicer WE, Lindau I, Skeath P, Su CY. Unified defect model and beyond Journal of Vacuum Science and Technology. 17: 1019-1027. DOI: 10.1116/1.570583  0.657
1980 Braicovich L, Abbati I, Miller JN, Lindau I, Schwarz S, Skeath PR, Su CY, Spicer WE. Systematics on the electron states of silicon d‐metal interfaces Journal of Vacuum Science and Technology. 17: 1005-1008. DOI: 10.1116/1.570581  0.621
1980 Spicer WE, Chye PW, Skeath PR, Su CY, Lindau I. Erratum: New and unified model for Schottky barrier and III–V insulator interface states formation [J. Vac. Sci. Technol. 16, 1422 (1979)] Journal of Vacuum Science and Technology. 17: 666-666. DOI: 10.1116/1.570540  0.587
1980 Skeath P, Lindau I, Su CY, Chye PW, Spicer WE. Bonding of Al and Ga to GaAs(110) Journal of Vacuum Science and Technology. 17: 511-516. DOI: 10.1116/1.570497  0.63
1980 Spicer WE, Lindau I, Skeath P, Su CY, Chye P. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States Physical Review Letters. 44: 420-423. DOI: 10.1103/Physrevlett.44.420  0.579
1980 Ling DT, Miller JN, Stefan PM, Lindau I, Spicer WE. Direct transition and matrix element effects in the ultraviolet-photoemission-spectroscopy spectra of Cu-Ni (110) Physical Review B. 21: 1417-1420. DOI: 10.1103/Physrevb.21.1417  0.58
1980 Allen JW, Johansson LI, Lindau I, Hagstrom SB. Surface mixed valence in Sm and SmB/sub 6/ Physical Review B. 21: 1335-1343. DOI: 10.1103/Physrevb.21.1335  0.357
1980 Miller JN, Ling DT, Shek ML, Weissman DL, Stefan PM, Lindau I, Spicer WE. Photoemission studies of clean and oxygen-covered Pt 6(111) × (100)☆ Surface Science Letters. 94: 16-28. DOI: 10.1016/0167-2584(80)90331-X  0.621
1980 Ling DT, Miller JN, Weissman DL, Pianetta P, Johansson LI, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100): I. The clean surface Surface Science Letters. 92: 350-364. DOI: 10.1016/0167-2584(80)90079-1  0.724
1980 Lindau I, Skeath PR, Su CY, Spicer WE. The interaction of thin Au and Al overlayers with the GaAs(110) surface Surface Science. 99: 192-201. DOI: 10.1016/0039-6028(80)90589-0  0.656
1980 Ling DT, Miller JN, Weissman DL, Pianetta P, Stefan PM, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) Surface Science Letters. 92: 350-364. DOI: 10.1016/0039-6028(80)90130-2  0.649
1979 Skeath P, Su CY, Chye PW, Pianetta P, Lindau I, Spicer WE. Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers Journal of Vacuum Science and Technology. 16: 1439-1442. DOI: 10.1116/1.570217  0.726
1979 Spicer WE, Chye PW, Skeath PR, Su CY, Lindau I. New and unified model for Schottky barrier and III–V insulator interface states formation Journal of Vacuum Science and Technology. 16: 1422-1433. DOI: 10.1116/1.570215  0.681
1979 Stöhr J, Johansson LI, Lindau I, Pianetta P. EXAFS studies of the bonding geometry of oxygen on Si(111) using electron yield detection Journal of Vacuum Science and Technology. 16: 1221-1224. DOI: 10.1116/1.570195  0.581
1979 Chye PW, Su CY, Lindau I, Skeath P, Spicer WE. Oxidation of ordered and disordered GaAs(110) Journal of Vacuum Science and Technology. 16: 1191-1194. DOI: 10.1116/1.570188  0.62
1979 Skeath P, Lindau I, Chye PW, Su CY, Spicer WE. Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110) Journal of Vacuum Science and Technology. 16: 1143-1148. DOI: 10.1116/1.570178  0.641
1979 Stöhr J, Johansson L, Lindau I, Pianetta P. Extended-x-ray-absorption-fine-structure studies of low- Z atoms in solids and on surfaces: Studies of Si 3 N 4 , Si O 2 , and oxygen on Si(111) Physical Review B. 20: 664-680. DOI: 10.1103/Physrevb.20.664  0.561
1979 Braicovich L, Garner CM, Skeath PR, Su CY, Chye PW, Lindau I, Spicer WE. Photoemission studies of the silicon-gold interface Physical Review B. 20: 5131-5141. DOI: 10.1103/Physrevb.20.5131  0.658
1979 Garner CM, Lindau I, Su CY, Pianetta P, Spicer WE. Electron-spectroscopic studies of the early stages of the oxidation of Si Physical Review B. 19: 3944-3956. DOI: 10.1103/Physrevb.19.3944  0.727
1979 Allen JW, Johansson LI, Bauer RS, Gustafsson T, Lindau I, Hagström SBM. Electronic structure of Sm surface studied by synchrotron-radiation-excited-photoelectron spectroscopies Le Journal De Physique Colloques. 40. DOI: 10.1051/Jphyscol:19795120  0.351
1979 Lindau I, Spicer WE. Photoelectron spectroscopy in the energy region 30 to 800 eV using synchrotron radiation Journal of Electron Spectroscopy and Related Phenomena. 15: 295-306. DOI: 10.1016/0368-2048(79)87047-4  0.662
1979 Lindau I, Spicer WE, Pianetta P, Chye PW, Garner CM. Ad-atom interactions with III-V semiconductor surfaces Journal of Electron Spectroscopy and Related Phenomena. 15: 197-200. DOI: 10.1016/0368-2048(79)87032-2  0.735
1979 Skeath P, Lindau I, Pianetta P, Chye PW, Su CY, Spicer WE. Photoemission study of the interaction of Al with a GaAs (110) surface Journal of Electron Spectroscopy and Related Phenomena. 17: 259-265. DOI: 10.1016/0368-2048(79)80016-X  0.698
1979 Spicer WE, Lindau I, Pianetta P, Chye PW, Garner CM. Fundamental studies of III-V surfaces and the (III-V)-oxide interface Thin Solid Films. 56: 1-18. DOI: 10.1016/0040-6090(79)90048-8  0.713
1979 Kahn A, Kanani D, Mark P, Chye PW, Su CY, Lindau I, Spicer WE. Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis Surface Science. 87: 325-332. DOI: 10.1016/0039-6028(79)90532-6  0.613
1979 Su CY, Chye PW, Pianetta P, Lindau I, Spicer WE. Oxygen adsorption on Cs covered GaAs(110) surfaces Surface Science. 86: 894-899. DOI: 10.1016/0039-6028(79)90472-2  0.695
1979 Spicer WE, Chye PW, Garner CM, Lindau I, Pianetta P. The surface electronic structure of 3-5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers) Surface Science. 86: 763-788. DOI: 10.1016/0039-6028(79)90458-8  0.744
1979 Chye PW, Su CY, Lindau I, Garner CM, Pianetta P, Spicer WE. Photoemission studies of the initial stages of oxidation of GaSb and InP Surface Science. 88: 439-460. DOI: 10.1016/0039-6028(79)90085-2  0.696
1979 Johansson LI, Lindau I. Photoemission studies of the energy dependence of the bulk plasmon loss intensity in Si and Al Solid State Communications. 29: 379-382. DOI: 10.1016/0038-1098(79)90576-3  0.342
1978 Pianetta P, Lindau I, Spicer WE. The Use of Soft X-Ray Photoemission Spectroscopy to Study the Adsorption of Oxygen on the (110) Surface of Gallium Arsenide and Gallium Antimonide Astm Special Technical Publications. 105-123. DOI: 10.1520/Stp25603S  0.724
1978 Lindau I, Chye PW, Garner CM, Pianetta P, Su CY, Spicer WE. New phenomena in Schottky barrier formation on III–V compounds Journal of Vacuum Science and Technology. 15: 1332-1339. DOI: 10.1116/1.569761  0.735
1978 Garner CM, Lindau I, Su CY, Pianetta P, Spicer WE. Abstract: Bonding states of oxygen on silicon Journal of Vacuum Science and Technology. 15: 1290-1291. DOI: 10.1116/1.569755  0.664
1978 Skeath P, Saperstein WA, Pianetta P, Lindau I, Spicer WE, Mark P. UPS and LEED studies of GaAs (110) and (111) As surfaces Journal of Vacuum Science and Technology. 15: 1219-1222. DOI: 10.1116/1.569696  0.705
1978 Ling DT, Miller JN, Pianetta PA, Weissman DL, Lindau I, Spicer WE. Abstract: Adsorption of oxygen on Cu(100)−A study by angularly resolved ultraviolet photoemission spectroscopy (ARUPS) Journal of Vacuum Science and Technology. 15: 495-496. DOI: 10.1116/1.569605  0.674
1978 Garner CM, Lindau I, Su CY, Pianetta P, Miller JN, Spicer WE. New phenomenon in the absorption of oxygen on silicon Physical Review Letters. 40: 403-406. DOI: 10.1103/Physrevlett.40.403  0.707
1978 Chye PW, Lindau I, Pianetta P, Garner CM, Su CY, Spicer WE. Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation Physical Review B. 18: 5545-5559. DOI: 10.1103/Physrevb.18.5545  0.711
1978 Pianetta P, Lindau I, Garner CM, Spicer WE. Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP Physical Review B. 18: 2792-2806. DOI: 10.1103/Physrevb.18.2792  0.716
1978 Chye PW, Lindau I, Pianetta P, Garner CM, Spicer WE. Evidence for a new type of metal-semiconductor interaction on GaSb Physical Review B. 17: 2682-2684. DOI: 10.1103/Physrevb.17.2682  0.7
1978 Spicer WE, Lindau I, Su CY, Chye PW, Pianetta P. Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes Applied Physics Letters. 33: 934-935. DOI: 10.1063/1.90223  0.692
1978 Lindau I, Pianetta P, Spicer WE, Gregory PE, Garner CM, Chye PW. Oxygen adsorption and the surface electronic structure of GaAs (110) Journal of Electron Spectroscopy and Related Phenomena. 13: 155-160. DOI: 10.1016/0368-2048(78)85023-3  0.708
1978 Pianetta P, Lindau I, Gregory PE, Garner CM, Spicer WE. Valence band studies of clean and oxygen exposed GaAs(100) surfaces Surface Science. 72: 298-320. DOI: 10.1016/0039-6028(78)90297-2  0.72
1978 Miller JN, Ling DT, Lindau I, Collins DM, Spicer WE. Comments on UPS studies of oxygen chemisorbed on group VIII transition metal surfaces Surface Science. 77. DOI: 10.1016/0039-6028(78)90149-8  0.61
1978 Ling DT, Miller JN, Lindau I, Spicer WE, Stefan PM. Oscillations in the compositional depth profile of Cu/Ni alloys: A study by UPS Surface Science. 74: 612-620. DOI: 10.1016/0039-6028(78)90017-1  0.626
1978 Johansson LI, Allen JW, Gustafsson T, Lindau I, Hagstrom SBM. Giant enhancement of the valence band photoemission intensity in γ-Ce Solid State Communications. 28: 53-55. DOI: 10.1016/0038-1098(78)90326-5  0.332
1978 Pianetta P, Lindau I. Phase space analysis applied to x-ray optics Nuclear Instruments and Methods. 152: 155-159. DOI: 10.1016/0029-554X(78)90256-2  0.474
1977 Chye PW, Pianetta P, Lindau I, Spicer WE. Oxygen sorption and excitonic effects on GaAs surfaces Journal of Vacuum Science and Technology. 14: 917-919. DOI: 10.1116/1.569328  0.717
1977 Spicer WE, Pianetta P, Lindau I, Chye PW. Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements Journal of Vacuum Science and Technology. 14: 885-893. DOI: 10.1116/1.569323  0.737
1977 Garner CM, Lindau I, Miller JN, Pianetta P, Spicer WE. Photoemission studies of the surface states and oxidation of group IV semiconductors Journal of Vacuum Science and Technology. 14: 372-375. DOI: 10.1116/1.569210  0.725
1977 Miller JN, Ling DT, Lindau I, Stefan PM, Spicer WE. Differential Relaxation Effects and Multielectron Excitation for Molecularly Chemisorbed CO on Platinum Physical Review Letters. 38: 1419-1422. DOI: 10.1103/Physrevlett.38.1419  0.637
1977 Pianetta P, Lindau I, Garner CM, Spicer WE. Reply to "oxidation properties of GaAs (110) surfaces" by R. Ludeke Physical Review B. 16: 5600-5602. DOI: 10.1103/Physrevb.16.5600  0.721
1977 Spicer WE, Lindau I, Miller JN, Ling DT, Pianetta P, Chye PW, Garner CM. Studies of surface electronic structure and surface chemistry using synchrotron radiation Physica Scripta. 16: 388-397. DOI: 10.1088/0031-8949/16/5-6/037  0.728
1977 Chye PW, Lindau I, Pianetta P, Garner CM, Spicer WE. Do the Au 5d-bands narrow at the surface: Comparison with Au alloys Physics Letters A. 63: 387-389. DOI: 10.1016/0375-9601(77)90941-0  0.708
1977 Pianetta P, Lindau I. High resolution X-ray spectroscopy using synchrotron radiation: Source characteristics and optical systems Journal of Electron Spectroscopy and Related Phenomena. 11: 13-38. DOI: 10.1016/0368-2048(77)85046-9  0.453
1977 Lindau I, Pianetta P, Garner CM, Chye PW, Gregory PE, Spicer WE. Photoemission studies of the electronic structure of III-V semiconductor surfaces Surface Science. 63: 45-55. DOI: 10.1016/0039-6028(77)90325-9  0.739
1977 Mark P, Pianetta P, Lindau I, Spicer WE. A comparison of LEED intensity data from chemically polished and cleaved GaAs(110) surfaces Surface Science. 69: 735-740. DOI: 10.1016/0039-6028(77)90151-0  0.683
1976 Spicer WE, Lindau I, Gregory PE, Garner CM, Pianetta P, Chye PW. Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP Journal of Vacuum Science and Technology. 13: 780-785. DOI: 10.1116/1.568989  0.716
1976 Yu KY, Spicer WE, Lindau I, Pianetta P, Lin SF. Relationship of heat of chemisorption to π‐ and σ‐level shifts as measured by photoemission Journal of Vacuum Science and Technology. 13: 277-279. DOI: 10.1116/1.568869  0.649
1976 Lindau I, Pianetta P, Yu KY, Spicer WE. Photoemission from some metals and semiconductors in the energy range 5–350 eV Journal of Vacuum Science and Technology. 13: 269-272. DOI: 10.1116/1.568866  0.719
1976 Pianetta P, Lindau I, Garner CM, Spicer WE. Oxidation properties of GaAs (110) surfaces Physical Review Letters. 37: 1166-1169. DOI: 10.1103/Physrevlett.37.1166  0.705
1976 Lindau I, Pianetta P, Yu KY, Spicer WE. Photoemission of gold in the energy range 30-300 eV using synchrotron radiation Physical Review B. 13: 492-495. DOI: 10.1103/Physrevb.13.492  0.692
1976 Lindau I, Pianetta P, Spicer WE. The energy dependence of the 4d photoionization cross-section of In and Sb Physics Letters A. 57: 225-226. DOI: 10.1016/0375-9601(76)90044-X  0.656
1976 Lindau I, Pianetta P, Yu KY, Spicer WE. Determination of the escape depth of photoemitted electrons in gold in the energy range 25–75 eV by use of synchrotron radiation Journal of Electron Spectroscopy and Related Phenomena. 8: 487-491. DOI: 10.1016/0368-2048(76)80036-9  0.666
1976 Yu KY, Spicer WE, Lindau I, Pianetta P, Lin SF. UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆ Surface Science. 57: 157-183. DOI: 10.1016/0039-6028(76)90175-8  0.68
1975 Doniach S, Lindau I, Spicer WE, Winick H. Synchrotron radiation as a new tool within photon‐beam technology Journal of Vacuum Science and Technology. 12: 1123-1127. DOI: 10.1116/1.568473  0.56
1975 Pianetta P, Lindau I, Garner C, Spicer WE. Determination of the Oxygen Binding Site on GaAs(110) Using Soft-X-Ray-Photoemission Spectroscopy Physical Review Letters. 35: 1356-1359. DOI: 10.1103/Physrevlett.35.1356  0.704
1975 Lindau I, Pianetta P, Yu K, Spicer WE. The intrinsic linewidth of the 4f levels in gold as determined by photoemission Physics Letters A. 54: 47-48. DOI: 10.1016/0375-9601(75)90601-5  0.675
1974 Lindau I, Spicer WE. Ultraviolet-photoemission studies of niobium Physical Review B. 10: 2262-2270. DOI: 10.1103/Physrevb.10.2262  0.628
1974 Lindau I, Pianetta P, Doniach S, Spicer WE. X-ray photoemission spectroscopy Nature. 250: 214-215. DOI: 10.1038/250214A0  0.654
1974 Lindau I, Spicer WE. The probing depth in photoemission and auger-electron spectroscopy Journal of Electron Spectroscopy and Related Phenomena. 3: 409-413. DOI: 10.1016/0368-2048(74)80024-1  0.592
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