| Year |
Citation |
Score |
| 2022 |
Cacovich S, Dally P, Vidon G, Legrand M, Gbegnon S, Rousset J, Puel JB, Guillemoles JF, Schulz P, Bouttemy M, Etcheberry A. In-Depth Chemical and Optoelectronic Analysis of Triple-Cation Perovskite Thin Films by Combining XPS Profiling and PL Imaging. Acs Applied Materials & Interfaces. PMID 35245028 DOI: 10.1021/acsami.1c22286 |
0.301 |
|
| 2019 |
Loubat A, Béchu S, Bouttemy M, Vigneron J, Lincot D, Guillemoles J, Etcheberry A. Cu depletion on Cu(In,Ga)Se2 surfaces investigated by chemical engineering: An x-ray photoelectron spectroscopy approach Journal of Vacuum Science and Technology. 37: 41201. DOI: 10.1116/1.5097353 |
0.403 |
|
| 2018 |
Santinacci L, Bouttemy M, Petit M, Gonçalves A, Simon N, Vigneron J, Etcheberry A. Investigations of the Anodic Porous Etching of n-InP in HCl by Atomic Absorption and X-ray Photoelectron Spectroscopies Journal of the Electrochemical Society. 165: H3131-H3137. DOI: 10.1149/2.0181804Jes |
0.361 |
|
| 2018 |
Hildebrandt T, Kozolinsky M, Loones N, Bouttemy M, Vigneron J, Etcheberry A, Lincot D, Donsanti F, Naghavi N. Fast Chemical Bath Deposition Process at Room Temperature of ZnS-Based Materials for Buffer Application in High-Efficiency Cu(In,Ga)Se 2 -Based Solar Cells Ieee Journal of Photovoltaics. 8: 1862-1867. DOI: 10.1109/Jphotov.2018.2871601 |
0.303 |
|
| 2018 |
Achard V, Balestrieri M, Bechu S, Bouttemy M, Jubault M, Hildebrandt T, Lombez L, Naghavi N, Etcheberry A, Lincot D, Donsanti F. Study of Gallium Front Grading at Low Deposition Temperature on Polyimide Substrates and Impacts on the Solar Cell Properties Ieee Journal of Photovoltaics. 8: 1852-1857. DOI: 10.1109/Jphotov.2018.2866195 |
0.308 |
|
| 2018 |
Hildebrandt T, Loones N, Bouttemy M, Vigneron J, Etcheberry A, Lincot D, Naghavi N. Use of a New Organic Complexing and Buffer Agent for Zn(S,O) Deposition for High-Efficiency Cu(In,Ga)Se 2 -Based Solar Cells Ieee Journal of Photovoltaics. 8: 266-271. DOI: 10.1109/Jphotov.2017.2775140 |
0.325 |
|
| 2017 |
Kandory A, Cattey H, Saviot L, Gharbi T, Vigneron J, Frégnaux M, Etcheberry A, Herlem G. Direct Writing on Copper Ion Doped Silica Films by Electrogeneration of Metallic Microstructures Journal of Physical Chemistry C. 121: 1129-1139. DOI: 10.1021/Acs.Jpcc.6B09913 |
0.416 |
|
| 2017 |
Loubat A, Bouttemy M, Gaiaschi S, Aureau D, Frégnaux M, Mercier D, Vigneron J, Chapon P, Etcheberry A. Chemical engineering of Cu(In,Ga)Se 2 surfaces: An absolute deoxidation studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy signatures Thin Solid Films. 633: 87-91. DOI: 10.1016/J.Tsf.2016.10.013 |
0.36 |
|
| 2017 |
Mollica F, Jubault M, Donsanti F, Loubat A, Bouttemy M, Etcheberry A, Naghavi N. Light absorption enhancement in ultra-thin Cu(In,Ga)Se2 solar cells by substituting the back-contact with a transparent conducting oxide based reflector Thin Solid Films. 633: 202-207. DOI: 10.1016/J.Tsf.2016.10.006 |
0.335 |
|
| 2017 |
Loubat A, Eypert C, Mollica F, Bouttemy M, Naghavi N, Lincot D, Etcheberry A. Optical properties of ultrathin CIGS films studied by spectroscopic ellipsometry assisted by chemical engineering Applied Surface Science. 421: 643-650. DOI: 10.1016/J.Apsusc.2016.10.037 |
0.387 |
|
| 2017 |
Gonçalves A-, Njel C, Aureau D, Etcheberry A. Direct correlations between XPS analyses and growth film by chronopotentiometry on InP in liquid ammonia (−55 °C) Applied Surface Science. 391: 44-48. DOI: 10.1016/J.Apsusc.2016.03.019 |
0.446 |
|
| 2017 |
Gallanti S, Chassaing E, Bouttemy M, Etcheberry A, Lincot D, Naghavi N. Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se 2 semiconducting electrodes for photovoltaic applications Journal of Applied Electrochemistry. 47: 1283-1291. DOI: 10.1007/S10800-017-1119-5 |
0.44 |
|
| 2016 |
Brunet M, Aureau D, Chantraine P, Guillemot F, Etcheberry A, Gouget-Laemmel AC, Ozanam F. Etching and chemical control of the silicon nitride surface. Acs Applied Materials & Interfaces. PMID 27977928 DOI: 10.1021/Acsami.6B12880 |
0.337 |
|
| 2016 |
Naghavi N, Hildebrandt T, Bouttemy M, Etcheberry A, Lincot D. Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell Proceedings of Spie. 9749. DOI: 10.1117/12.2223151 |
0.332 |
|
| 2016 |
Ridier K, Aureau D, Bérini B, Dumont Y, Keller N, Vigneron J, Etcheberry A, Fouchet A. Enhanced Depth Profiling of Perovskite Oxide: Low Defect Levels Induced in SrTiO3 by Argon Cluster Sputtering Journal of Physical Chemistry C. 120: 21358-21363. DOI: 10.1021/Acs.Jpcc.6B04007 |
0.308 |
|
| 2016 |
Hildebrandt T, Loones N, Schneider N, Vigneron J, Bouttemy M, Etcheberry A, Lincot D, Naghavi N. A better understanding of Cbd-Zn(S,O) using hydrogen peroxide as an additive Thin Solid Films. 619: 25-32. DOI: 10.1016/J.Tsf.2016.10.031 |
0.333 |
|
| 2016 |
Aureau D, Ridier K, Bérini B, Dumont Y, Keller N, Vigneron J, Bouttemy M, Etcheberry A, Fouchet A. Advanced analysis tool for X-ray photoelectron spectroscopy profiling: Cleaning of perovskite SrTiO3 oxide surface using argon cluster ion source Thin Solid Films. 601: 89-92. DOI: 10.1016/J.Tsf.2015.11.017 |
0.352 |
|
| 2016 |
Carrasco N, Jomard F, Vigneron J, Etcheberry A, Cernogora G. Laboratory analogues simulating Titan's atmospheric aerosols: Compared chemical compositions of grains and thin films Planetary and Space Science. 128: 52-57. DOI: 10.1016/J.Pss.2016.05.006 |
0.342 |
|
| 2016 |
Gautier P, Vallee A, Sinito C, Etcheberry A, Simon N. Effect of growth temperature on the electrodeposition of zinc oxide layers on diamond surfaces Diamond and Related Materials. 62: 1-6. DOI: 10.1016/J.Diamond.2015.12.005 |
0.433 |
|
| 2016 |
Hrabovsky D, Berini B, Fouchet A, Aureau D, Keller N, Etcheberry A, Dumont Y. Strontium titanate (100) surfaces monitoring by high temperature in situ ellipsometry Applied Surface Science. 367: 307-311. DOI: 10.1016/J.Apsusc.2016.01.175 |
0.402 |
|
| 2015 |
Glynn C, Aureau D, Collins G, O'Hanlon S, Etcheberry A, O'Dwyer C. Solution processable broadband transparent mixed metal oxide nanofilm optical coatings via substrate diffusion doping. Nanoscale. 7: 20227-37. PMID 26575987 DOI: 10.1039/C5Nr06184A |
0.386 |
|
| 2015 |
Benkoula S, Sublemontier O, Patanen M, Nicolas C, Sirotti F, Naitabdi A, Gaie-Levrel F, Antonsson E, Aureau D, Ouf FX, Wada S, Etcheberry A, Ueda K, Miron C. Water adsorption on TiO2 surfaces probed by soft X-ray spectroscopies: bulk materials vs. isolated nanoparticles. Scientific Reports. 5: 15088. PMID 26462615 DOI: 10.1038/Srep15088 |
0.327 |
|
| 2015 |
Agostoni V, Horcajada P, Noiray M, Malanga M, Aykaç A, Jicsinszky L, Vargas-Berenguel A, Semiramoth N, Daoud-Mahammed S, Nicolas V, Martineau C, Taulelle F, Vigneron J, Etcheberry A, Serre C, et al. A "green" strategy to construct non-covalent, stable and bioactive coatings on porous MOF nanoparticles. Scientific Reports. 5: 7925. PMID 25603994 DOI: 10.1038/Srep07925 |
0.322 |
|
| 2015 |
Bugot C, Schneider N, Bouttemy M, Etcheberry A, Lincot D, Donsanti F. Study of atomic layer deposition of indium oxy-sulfide films for Cu(In,Ga)Se2solar cells Thin Solid Films. 582: 340-344. DOI: 10.1016/J.Tsf.2014.09.036 |
0.416 |
|
| 2015 |
Mercier D, Bouttemy M, Vigneron J, Chapon P, Etcheberry A. GD-OES and XPS coupling: A new way for the chemical profiling of photovoltaic absorbers Applied Surface Science. 347: 799-807. DOI: 10.1016/J.Apsusc.2015.04.093 |
0.331 |
|
| 2015 |
Delbos E, Aureau D, Belghiti HE, Vigneron J, Bouttemy M, Etcheberry A. Localised metallisation process for silicon solar cells Physica Status Solidi (C). 12: 1427-1432. DOI: 10.1002/Pssc.201510106 |
0.356 |
|
| 2014 |
Sublemontier O, Nicolas C, Aureau D, Patanen M, Kintz H, Liu X, Gaveau MA, Le Garrec JL, Robert E, Barreda FA, Etcheberry A, Reynaud C, Mitchell JB, Miron C. X-ray Photoelectron Spectroscopy of Isolated Nanoparticles. The Journal of Physical Chemistry Letters. 5: 3399-403. PMID 26278452 DOI: 10.1021/Jz501532C |
0.356 |
|
| 2014 |
Collins G, Aureau D, Holmes JD, Etcheberry A, O'Dwyer C. Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100). Langmuir : the Acs Journal of Surfaces and Colloids. 30: 14123-7. PMID 25396678 DOI: 10.1021/La503819Z |
0.379 |
|
| 2014 |
Ammar M, Smadja C, Ly GT, Tandjigora D, Vigneron J, Etcheberry A, Taverna M, Dufour-Gergam E. Chemical engineering of self-assembled Alzheimer's peptide on a silanized silicon surface. Langmuir : the Acs Journal of Surfaces and Colloids. 30: 5863-72. PMID 24654702 DOI: 10.1021/La500695Y |
0.333 |
|
| 2014 |
Sam S, Gouget-Laemmel AC, Chazalviel JN, Ozanam F, Etcheberry A, Belhousse S, Gabouze N. Voltammetric Behavior of Peptide-Modified Porous Silicon after Metal Complexation Key Engineering Materials. 605: 119-122. DOI: 10.4028/Www.Scientific.Net/Kem.605.119 |
0.352 |
|
| 2014 |
Hervier A, Aureau D, Woytasik M, Planté M, Vigneron J, Busardo D, Etcheberry A. High Energy Ion Bombardment of Thin Films: From Platinum on Silicon to Platinum Silicide Journal of the Electrochemical Society. 161: H203-H206. DOI: 10.1149/2.042404Jes |
0.454 |
|
| 2014 |
Njel C, Gonçalves AM, Etcheberry A. Effective performances of chronoamperometry on the passivation process of n-InP in acidic liquid ammonia (-55 °C) Electrochimica Acta. 139: 152-156. DOI: 10.1016/J.Electacta.2014.07.035 |
0.426 |
|
| 2014 |
Cheng X, Than X-, Pinault M, Mayne M, Reynaud C, Vigneron J, Etcheberry A, Perez H. Determination of selectivity and specific area related to oxygen reduction reaction as a function of catalyst loading on non-noble metal based electrocatalyst porous electrodes: an example on nitrogen doped carbon nanotube Electrochimica Acta. 135: 293-300. DOI: 10.1016/J.Electacta.2014.05.022 |
0.365 |
|
| 2014 |
Simon N, Charrier G, Gonçalves A, Aureau D, Gautier P, Ndjeri M, Etcheberry A. Direct amination of diamond surfaces by electroless treatment in liquid ammonia solution Electrochemistry Communications. 42: 17-20. DOI: 10.1016/J.Elecom.2014.01.024 |
0.362 |
|
| 2014 |
Pelenc D, Merlin J, Etcheberry A, Ballet P, Baudry X, Brellier D, Destefanis V, Ferron A, Fougères P, Giotta D, Grangier C, Mollard L, Perez A, Rochette F, Rubaldo L, et al. Development of a Method for Chemical–Mechanical Preparation of the Surface of CdZnTe Substrates for HgCdTe-Based Infrared Focal-Plane Arrays Journal of Electronic Materials. 43: 3004-3011. DOI: 10.1007/S11664-014-3175-5 |
0.389 |
|
| 2013 |
Hai Z, Kolli NE, Uribe DB, Beaunier P, José-Yacaman M, Vigneron J, Etcheberry A, Sorgues S, Colbeau-Justin C, Chen J, Remita H. Modification of TiO2 by Bimetallic Au-Cu Nanoparticles for Wastewater Treatment. Journal of Materials Chemistry. a, Materials For Energy and Sustainability. 1: 10829-10835. PMID 27274844 DOI: 10.1039/C3Ta11684K |
0.322 |
|
| 2013 |
Barakat H, Saunier J, Aymes Chodur C, Aubert P, Vigneron J, Etcheberry A, Yagoubi N. Modification of a cyclo-olefin surface by radio-sterilization: is there any effect on the interaction with drug solutions? International Journal of Pharmaceutics. 456: 212-22. PMID 23933438 DOI: 10.1016/J.Ijpharm.2013.07.065 |
0.303 |
|
| 2013 |
Ammar M, Smadja C, Giang Thi Phuong L, Azzouz M, Vigneron J, Etcheberry A, Taverna M, Dufour-Gergam E. A new controlled concept of immune-sensing platform for specific detection of Alzheimer's biomarkers. Biosensors & Bioelectronics. 40: 329-35. PMID 22981833 DOI: 10.1016/J.Bios.2012.07.072 |
0.309 |
|
| 2013 |
Hildebrandt T, Loones N, Schneider N, Bouttemy M, Vigneron J, Etcheberry A, Lincot D, Naghavi N. Effects of additives on the improved growth rate and morphology of Chemical Bath Deposited Zn(S,O,OH) buffer layer for Cu(In,Ga)Se 2 - based solar cells Mrs Proceedings. 1538: 39-44. DOI: 10.1557/Opl.2013.976 |
0.313 |
|
| 2013 |
Grabowska E, Zaleska A, Sorgues S, Kunst M, Etcheberry A, Colbeau-Justin C, Remita H. Modification of titanium(IV) dioxide with small silver nanoparticles: Application in photocatalysis Journal of Physical Chemistry C. 117: 1955-1962. DOI: 10.1021/Jp3112183 |
0.332 |
|
| 2013 |
Gonçalves A-, Njel C, Mathieu C, Aureau D, Etcheberry A. Phosphazene like film formation on InP in liquid ammonia (223 K) Thin Solid Films. 538: 21-24. DOI: 10.1016/J.Tsf.2012.10.090 |
0.455 |
|
| 2013 |
Volatron F, Cheng X, Albouy PA, Akrour L, Borta A, Pinault M, Etcheberry A, Perez H. Porous electrodes based on platinum capped electrocatalyst: Combining thermal treatment XPS analysis and electrochemistry give evidence for the stabilizing role of the thiol capping agent on the Pt dispersion and core feature Electrochimica Acta. 91: 344-352. DOI: 10.1016/J.Electacta.2013.01.010 |
0.416 |
|
| 2013 |
Cheng X, Volatron F, Pardieu E, Borta A, Carrot G, Reynaud C, Mayne M, Pinault M, Etcheberry A, Perez H. Nanocomposite electrodes based on pre-synthesized organically grafted platinum nanoparticles and carbon nanotubes. III: Determination of oxygen reduction reaction selectivity and specific area of porous electrode related to the oxygen reduction reaction ranging from 2 m2 gPt-1 to 310 m2 gPt-1 Electrochimica Acta. 89: 1-12. DOI: 10.1016/J.Electacta.2012.11.048 |
0.375 |
|
| 2013 |
Vaissiere N, Saada S, Bouttemy M, Etcheberry A, Bergonzo P, Arnault JC. Heteroepitaxial diamond on iridium: New insights on domain formation Diamond and Related Materials. 36: 16-25. DOI: 10.1016/J.Diamond.2013.03.010 |
0.334 |
|
| 2013 |
Charrier G, Aureau D, Gonçalves A, Collet G, Bouttemy M, Etcheberry A, Simon N. Gold nanoparticles immobilization: Evidence of amination of diamond surfaces in liquid ammonia Diamond and Related Materials. 32: 36-42. DOI: 10.1016/J.Diamond.2012.11.014 |
0.382 |
|
| 2013 |
Charrier G, Etcheberry A, Simon N. Reduction mechanisms of different oxidizing agents at diamond surfaces Comptes Rendus Chimie. 16: 21-27. DOI: 10.1016/J.Crci.2012.03.005 |
0.366 |
|
| 2013 |
Gonçalves A, Simon N, Channoug S, Aureau D, Mathieu C, Etcheberry A. Stability of InP oxide versus solvated electrons in liquid ammonia Comptes Rendus Chimie. 16: 34-38. DOI: 10.1016/J.Crci.2012.01.010 |
0.347 |
|
| 2013 |
Vivet L, Joudrier A-, Tan K-, Morelle J-, Etcheberry A, Chalumeau L. Influence of nickel-phosphorus surface roughness on wettability and pores formation in solder joints for high power electronic applications Applied Surface Science. 287: 13-21. DOI: 10.1016/J.Apsusc.2013.09.042 |
0.353 |
|
| 2013 |
Aureau D, Chaghi R, Gerard I, Sik H, Fleury J, Etcheberry A. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation Applied Surface Science. 276: 182-189. DOI: 10.1016/J.Apsusc.2013.03.063 |
0.377 |
|
| 2013 |
Vivet L, Joudrier A-, Bouttemy M, Vigneron J, Tan KL, Morelle JM, Etcheberry A, Chalumeau L. Wettability and XPS analyses of nickel–phosphorus surfaces after plasma treatment: An efficient approach for surface qualification in mechatronic processes Applied Surface Science. 274: 71-78. DOI: 10.1016/J.Apsusc.2013.02.093 |
0.357 |
|
| 2012 |
Chassaing E, Naghavi N, Bouttemy M, Bockelee V, Vigneron J, Etcheberry A, Lincot D. Electrodeposition Mechanism of Indium Sulfide and Indium Oxi(hydroxi)sulfide Thin Films from In(III)-thiosulfate Acidic Aqueous Solutions Journal of the Electrochemical Society. 159. DOI: 10.1149/2.051206Jes |
0.356 |
|
| 2012 |
Naghavi N, Jehl Z, Donsanti F, Guillemoles JF, Gérard I, Bouttemy M, Etcheberry A, Pelouard JL, Collin S, Colin C, Péré-Laperne N, Dahan N, Greffet JJ, Morel B, Djebbour Z, et al. Toward high efficiency ultra-thin CIGSe based solar cells using light management techniques Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.909419 |
0.318 |
|
| 2012 |
Jehl Z, Bouttemy M, Lincot D, Guillemoles JF, Gerard I, Etcheberry A, Voorwinden G, Powalla M, Naghavi N. Insights on the influence of surface roughness on photovoltaic properties of state of the art copper indium gallium diselenide thin films solar cells Journal of Applied Physics. 111: 114509. DOI: 10.1063/1.4721648 |
0.372 |
|
| 2012 |
Erfurth F, Jehl Z, Bouttemy M, Dahan N, Tran-Van P, Gerard I, Etcheberry A, Greffet J-, Powalla M, Voorwinden G, Lincot D, Guillemoles JF, Naghavi N. Mo/Cu(In, Ga)Se2 back interface chemical and optical properties for ultrathin CIGSe solar cells Applied Surface Science. 258: 3058-3061. DOI: 10.1016/J.Apsusc.2011.11.037 |
0.362 |
|
| 2012 |
Causier A, Bouttemy M, Gérard I, Aureau D, Vigneron J, Etcheberry A. Aqueous bromine etching of InP: a specific surface chemistry Physica Status Solidi (C). 9: 1408-1410. DOI: 10.1002/Pssc.201100681 |
0.345 |
|
| 2012 |
Lehoux A, Ramos L, Beaunier P, Uribe DB, Dieudonné P, Audonnet F, Etcheberry A, José-Yacaman M, Remita H. Tuning the porosity of bimetallic nanostructures by a soft templating approach Advanced Functional Materials. 22: 4900-4908. DOI: 10.1002/Adfm.201200666 |
0.318 |
|
| 2011 |
Berionni G, Gonçalves AM, Mathieu C, Devic T, Etchéberry A, Goumont R. Electrochemical and spectrophotometrical investigation of the electron-accepting strength of organic superelectrophiles: X-ray structure of their charge transfer complexes with tetrathiafulvalene. Physical Chemistry Chemical Physics : Pccp. 13: 2857-69. PMID 21165467 DOI: 10.1039/C0Cp01282C |
0.307 |
|
| 2011 |
Jehl Z, Erfurth F, Naghavi N, Lombez L, Gerard I, Bouttemy M, Tran-Van P, Etcheberry A, Voorwinden G, Dimmler B, Wischmann W, Powalla M, Guillemoles JF, Lincot D. Thinning of CIGS solar cells: Part II: Cell characterizations Thin Solid Films. 519: 7212-7215. DOI: 10.1016/J.Tsf.2010.12.224 |
0.319 |
|
| 2011 |
Bouttemy M, Tran-Van P, Gerard I, Hildebrandt T, Causier A, Pelouard JL, Dagher G, Jehl Z, Naghavi N, Voorwinden G, Dimmler B, Powalla M, Guillemoles JF, Lincot D, Etcheberry A. Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions Thin Solid Films. 519: 7207-7211. DOI: 10.1016/J.Tsf.2010.12.219 |
0.385 |
|
| 2011 |
Mrad O, Saunier J, Aymes-Chodur C, Mazel V, Rosilio V, Agnely F, Vigneron J, Etcheberry A, Yagoubi N. Aging of a medical device surface following cold plasma treatment: Influence of low molecular weight compounds on surface recovery European Polymer Journal. 47: 2403-2413. DOI: 10.1016/J.Eurpolymj.2011.09.026 |
0.304 |
|
| 2011 |
March G, Volatron F, Lachaud F, Cheng X, Baret B, Pinault M, Etcheberry A, Perez H. Nanocomposite electrodes based on pre-synthesized organically capped platinum nanoparticles and carbon nanotubes. Part II: Determination of diffusion area for oxygen reduction reflects platinum accessibility Electrochimica Acta. 56: 5151-5157. DOI: 10.1016/J.Electacta.2011.03.057 |
0.362 |
|
| 2011 |
Naghavi N, Chassaing E, Bouttemy M, Rocha G, Renou G, Leite E, Etcheberry A, Lincot D. Electrodeposition of In2S3 buffer layer for Cu(In,Ga)Se2 solar cells Energy Procedia. 10: 155-160. DOI: 10.1016/J.Egypro.2011.10.169 |
0.404 |
|
| 2011 |
Charrier G, Lévy S, Vigneron J, Etcheberry A, Simon N. Electroless oxidation of boron-doped diamond surfaces: comparison between four oxidizing agents; Ce4+, MnO4−, H2O2 and S2O82− Diamond and Related Materials. 20: 944-950. DOI: 10.1016/J.Diamond.2011.05.003 |
0.391 |
|
| 2011 |
Causier A, Gerard I, Bouttemy M, Etcheberry A, Pautet C, Baylet J, Mollard L. Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach Journal of Electronic Materials. 40: 1823-1829. DOI: 10.1007/S11664-011-1660-7 |
0.327 |
|
| 2010 |
Mrad O, Saunier J, Aymes-Chodur C, Rosilio V, Bouttier S, Agnely F, Aubert P, Vigneron J, Etcheberry A, Yagoubi N. A multiscale approach to assess the complex surface of polyurethane catheters and the effects of a new plasma decontamination treatment on the surface properties. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 16: 764-78. PMID 20920389 DOI: 10.1017/S1431927610093876 |
0.309 |
|
| 2010 |
Chassaing E, Grand PP, Ramdani O, Vigneron J, Etcheberry A, Lincot D. Electrocrystallization mechanism of Cu-In-Se compounds for solar cell applications Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3374590 |
0.415 |
|
| 2010 |
Gon'alves AM, Mézailles N, Mathieu C, Le Floch P, Etcheberry A. Fully protective yet functionalizable monolayer on InP Chemistry of Materials. 22: 3114-3120. DOI: 10.1021/Cm100035A |
0.437 |
|
| 2010 |
Santinacci L, Gonçalves A, Simon N, Etcheberry A. Electrochemical and optical characterizations of anodic porous n-InP(100) layers Electrochimica Acta. 56: 878-888. DOI: 10.1016/J.Electacta.2010.09.031 |
0.423 |
|
| 2010 |
Gonçalves A-, Mathieu C, Herlem M, Etcheberry A. The pH response of the InP/liquid ammonia interface at 223 K: A pure nernstian behavior Electrochimica Acta. 55: 7413-7418. DOI: 10.1016/J.Electacta.2010.07.001 |
0.359 |
|
| 2010 |
Simon N, Charrier G, Etcheberry A. Electroless oxidation of diamond surfaces in ceric and ferricyanide solutions: An easy way to produce “C–O” functional groups Electrochimica Acta. 55: 5753-5759. DOI: 10.1016/J.Electacta.2010.05.013 |
0.396 |
|
| 2010 |
Perez H, Morin A, Akrour L, Cremona C, Baret B, Haccoun J, Escribano S, Etcheberry A. Evidence for high performances of low Pt loading electrodes based on capped platinum electrocatalyst and carbon nanotubes in fuel cell devices Electrochimica Acta. 55: 2358-2362. DOI: 10.1016/J.Electacta.2009.11.090 |
0.384 |
|
| 2010 |
Wang M, Simon N, Charrier G, Bouttemy M, Etcheberry A, Li M, Boukherroub R, Szunerits S. Distinction between surface hydroxyl and ether groups on boron-doped diamond electrodes using a chemical approach Electrochemistry Communications. 12: 351-354. DOI: 10.1016/J.Elecom.2009.12.029 |
0.36 |
|
| 2010 |
Santinacci L, Gonçalves A, Bouttemy M, Etcheberry A. Morphology-to-properties correlations in anodic porous InP layers Journal of Solid State Electrochemistry. 14: 1177-1184. DOI: 10.1007/S10008-009-0942-Y |
0.452 |
|
| 2010 |
Gonçalves A-, Bouttemy M, Ali OE, Eb A, Mathieu C, Vigneron J, Etcheberry A, White R, Mack P. An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia† Surface and Interface Analysis. 42: 775-778. DOI: 10.1002/Sia.3547 |
0.456 |
|
| 2009 |
Aureau D, Morscheidt W, Etcheberry A, Vigneron J, Ozanam F, Allongue P, Chazalviel J-. Controlled Oxidation of Alkyl Monolayers Grafted onto Flat Si(111) in an Oxygen Plasma of Low Power Density Journal of Physical Chemistry C. 113: 14418-14428. DOI: 10.1021/Jp903892Z |
0.33 |
|
| 2009 |
Souici AH, Keghouche N, Delaire JA, Remita H, Etcheberry A, Mostafavi M. Structural and Optical Properties of PbS Nanoparticles Synthesized by the Radiolytic Method Journal of Physical Chemistry C. 113: 8050-8057. DOI: 10.1021/Jp811133B |
0.307 |
|
| 2009 |
Darga A, Mencaraglia D, Djebbour Z, Dubois AM, Guillemoles JF, Connolly JP, Roussel O, Lincot D, Canava B, Etcheberry A. Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells Thin Solid Films. 517: 2550-2553. DOI: 10.1016/J.Tsf.2008.11.036 |
0.35 |
|
| 2009 |
Wang M, Simon N, Decorse-Pascanut C, Bouttemy M, Etcheberry A, Li M, Boukherroub R, Szunerits S. Comparison of the chemical composition of boron-doped diamond surfaces upon different oxidation processes Electrochimica Acta. 54: 5818-5824. DOI: 10.1016/J.Electacta.2009.05.037 |
0.4 |
|
| 2009 |
Baret B, Aubert P-, L’Hermite MM, Pinault M, Reynaud C, Etcheberry A, Perez H. Nanocomposite electrodes based on pre-synthesized organically capped platinum nanoparticles and carbon nanotubes. Part I: Tuneable low platinum loadings, specific H upd feature and evidence for oxygen reduction Electrochimica Acta. 54: 5421-5430. DOI: 10.1016/J.Electacta.2009.04.033 |
0.383 |
|
| 2009 |
Simon N, Decorse-Pascanut C, Gonçalves A, Ballutaud D, Charrier G, Etcheberry A. Nitrogenation of boron doped diamond: Comparison of an electrochemical treatment in liquid ammonia and a NH3/N2 plasma Diamond and Related Materials. 18: 890-894. DOI: 10.1016/J.Diamond.2009.02.017 |
0.404 |
|
| 2009 |
Hubert C, Naghavi N, Roussel O, Etcheberry A, Hariskos D, Menner R, Powalla M, Kerrec O, Lincot D. The Zn(S,O,OH)/ZnMgO buffer in thin film Cu(In,Ga)(S,Se)2‐based solar cells part I: Fast chemical bath deposition of Zn(S,O,OH) buffer layers for industrial application on Co‐evaporated Cu(In,Ga)Se2 and electrodeposited CuIn(S,Se)2 solar cells Progress in Photovoltaics. 17: 470-478. DOI: 10.1002/Pip.898 |
0.347 |
|
| 2009 |
Naghavi N, Hubert C, Etcheberry A, Bermudez V, Hariskos D, Powalla M, Lincot D. Compositional engineering of chemical bath deposited (Zn,Cd)S buffer layers for electrodeposited CuIn(S,Se)2 and coevaporated Cu(In,Ga)Se2 solar cells Progress in Photovoltaics. 17: 1-9. DOI: 10.1002/Pip.853 |
0.309 |
|
| 2008 |
Roussel O, Ramdani O, Chassaing E, Grand PP, Lamirand M, Etcheberry A, Kerrec O, Guillemoles JF, Lincot D. First stages of CuInSe2 electrodeposition from Cu(II)-In(III)-Se(IV) acidic solutions on polycrystalline Mo films Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2815476 |
0.358 |
|
| 2008 |
Santinacci L, Djenizian T, Schwaller P, Suter T, Etcheberry A, Schmuki P. Selective electrochemical gold deposition onto p-Si (1 0 0) surfaces Journal of Physics D. 41: 175301. DOI: 10.1088/0022-3727/41/17/175301 |
0.415 |
|
| 2008 |
Perez H, Noël V, Cavaliere-Jaricot S, Etcheberry A, Albouy P. Nanocomposite Langmuir–Blodgett films based on crown derivatized platinum nanoparticles: Synthesis, characterization, and electrical properties Thin Solid Films. 517: 755-763. DOI: 10.1016/J.Tsf.2008.08.185 |
0.788 |
|
| 2008 |
Cavaliere-Jaricot S, Haccoun J, Etcheberry A, Herlem M, Perez H. Oxygen reduction of pre-synthesized organically capped platinum nanoparticles assembled in mixed Langmuir–Blodgett films: Evolutions with the platinum amount and leveling after fatty acid removal Electrochimica Acta. 53: 5992-5999. DOI: 10.1016/J.Electacta.2008.03.043 |
0.783 |
|
| 2008 |
Favry É, Frederich N, Meunier A, Omnès L, Jomard F, Etcheberry A. Investigation of organics adsorption and inclusion at the growing interfaces during the Damascene process Electrochimica Acta. 53: 7004-7011. DOI: 10.1016/J.Electacta.2008.01.108 |
0.38 |
|
| 2008 |
Gonçalves A-, Seitz O, Mathieu C, Herlem M, Etcheberry A. First evidence of stable P-N bonds after anodic treatment of InP in liquid ammonia : A new III-V material passivation route Electrochemistry Communications. 10: 225-228. DOI: 10.1016/J.Elecom.2007.11.018 |
0.39 |
|
| 2008 |
Simon N, Girard H, Manesse M, Ballutaud D, Etcheberry A. Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing Diamond and Related Materials. 17: 1371-1375. DOI: 10.1016/J.Diamond.2008.03.003 |
0.755 |
|
| 2008 |
Eb A, Gonçalves A, Santinacci L, Mathieu C, Etcheberry A. Anodic behavior and pore growth of n-InP in acidic liquid ammonia Comptes Rendus Chimie. 11: 1023-1029. DOI: 10.1016/J.Crci.2008.02.002 |
0.439 |
|
| 2008 |
Badano G, Baudry X, Ballet P, Duvaut P, Million A, Micoud E, Kaismoune S, Fougères P, Mibord S, Tran-Van P, Etcheberry A. Anisotropic surface roughness in molecular-beam epitaxy CdTe (211)B/Ge(211) Journal of Electronic Materials. 37: 1369-1375. DOI: 10.1007/S11664-008-0424-5 |
0.311 |
|
| 2008 |
Eb A, Gonçalves A‐, Santinacci L, Mathieu C, Etcheberry A. Pore growth on n-inp in liquid ammonia : electrode potential and morphology evolution Physica Status Solidi (C). 5: 3484-3487. DOI: 10.1002/Pssc.200779427 |
0.409 |
|
| 2008 |
Hubert C, Naghavi N, Etcheberry A, Roussel O, Hariskos D, Powalla M, Kerrec O, Lincot D. A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se)2 solar cells Physica Status Solidi (a). 205: 2335-2339. DOI: 10.1002/Pssa.200879446 |
0.358 |
|
| 2007 |
Girard HA, de La Rochefoucauld E, Ballutaud D, Etcheberry A, Simon N. Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements Electrochemical and Solid-State Letters. 10: F34. DOI: 10.1149/1.2743824 |
0.407 |
|
| 2007 |
Ramdani O, Chassaing E, Canava B, Grand PP, Roussel O, Lamirand M, Rzepka E, Etcheberry A, Guillemoles JF, Lincot D, Kerrec O. Electrochemical cementation phenomena on polycrystalline molybdenum thin films from Cu(II)-In(III)-Se(IV) acidic solutions Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2740041 |
0.443 |
|
| 2007 |
Simon N, Quach NC, Gonçalves AM, Etcheberry A. Growth of Anodic Oxides on n-InP Studied by Electrochemical Methods and Surface Analyses Journal of the Electrochemical Society. 154: H340. DOI: 10.1149/1.2709504 |
0.37 |
|
| 2007 |
Gonçalves A-, Santinacci L, Eb A, Gerard I, Mathieu C, Etcheberry A. Pore Formation on n-InP(100) in Acidic Liquid Ammonia at 223 K Electrochemical and Solid State Letters. 10. DOI: 10.1149/1.2434201 |
0.375 |
|
| 2007 |
Chassaing E, Canava B, Grand PP, Roussel O, Ramdani O, Etcheberry A, Guillemoles JF, Lincot D, Kerrec O. Electroless nucleation and growth of Cu-Se phases on molybdenum in Cu(II)-In(III)-Se(IV) solutions Electrochemical and Solid-State Letters. 10. DOI: 10.1149/1.2363943 |
0.357 |
|
| 2007 |
Berini B, Keller N, Dumont Y, Popova E, Noun W, Guyot M, Vigneron J, Etcheberry A, Franco N, Silva RMCd. Reversible phase transformation ofLaNiO3−xthin films studiedin situby spectroscopic ellipsometry Physical Review B. 76: 205417. DOI: 10.1103/Physrevb.76.205417 |
0.33 |
|
| 2007 |
Hubert C, Naghavi N, Canava B, Etcheberry A, Lincot D. Thermodynamic and experimental study of chemical bath deposition of Zn(S,O,OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S,Se)2 absorbers Thin Solid Films. 515: 6032-6035. DOI: 10.1016/J.Tsf.2006.12.139 |
0.395 |
|
| 2007 |
Roussel O, Lamirand M, Naghavi N, Guillemoles JF, Canava B, Etcheberry A. Interfacial chemistry control in thin film solar cells based on electrodeposited CuIn(S,Se)2 Thin Solid Films. 515: 6123-6126. DOI: 10.1016/J.Tsf.2006.12.137 |
0.342 |
|
| 2007 |
Cavaliere-Jaricot S, Etcheberry A, Herlem M, Noël V, Perez H. Electrochemistry at capped platinum nanoparticle Langmuir Blodgett films: A study of the influence of platinum amount and of number of LB layers Electrochimica Acta. 52: 2285-2293. DOI: 10.1016/J.Electacta.2006.06.046 |
0.788 |
|
| 2007 |
Girard H, Simon N, Ballutaud D, de La Rochefoucauld E, Etcheberry A. Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond Diamond and Related Materials. 16: 888-891. DOI: 10.1016/J.Diamond.2006.12.002 |
0.408 |
|
| 2007 |
Girard H, Simon N, Ballutaud D, Herlem M, Etcheberry A. Effect of anodic and cathodic treatments on the charge transfer of boron doped diamond electrodes Diamond and Related Materials. 16: 316-325. DOI: 10.1016/J.Diamond.2006.06.009 |
0.739 |
|
| 2007 |
Badano G, Million A, Canava B, Tran-Van P, Etcheberry A. Fast detection of precipitates and oxides on CdZnTe surfaces by spectroscopic ellipsometry Journal of Electronic Materials. 36: -1084. DOI: 10.1007/S11664-007-0176-7 |
0.321 |
|
| 2007 |
Santinacci L, Gonçalves A‐, David C, Eb A, Gerard I, Mathieu C, Herlem M, Etcheberry A. In situ electrochemical characterization of porous n-InP (100) Physica Status Solidi (C). 4: 1898-1902. DOI: 10.1002/Pssc.200674314 |
0.435 |
|
| 2007 |
Gonçalves A, Santinacci L, Eb A, David C, Mathieu C, Herlem M, Etcheberry A. New porosification of n‐InP and n‐GaAs in acidic liquid ammonia at 223 K: unusual morphologies associated to distinguished electrochemical behaviours Physica Status Solidi (a). 204: 1286-1291. DOI: 10.1002/Pssa.200674311 |
0.761 |
|
| 2006 |
Mayer CR, Dumas E, Miomandre F, Méallet-Renault R, Warmont F, Vigneron J, Pansu R, Etcheberry A, Sécheresse F. Polypyridyl ruthenium complexes as coating agent for the formation of gold and silver nanocomposites in different media. Preliminary luminescence and electrochemical studies New Journal of Chemistry. 30: 1628-1637. DOI: 10.1039/B607889C |
0.339 |
|
| 2006 |
Cavaliere-Jaricot S, Etcheberry A, Herlem M, Perez H. Electrochemical and coupled XPS studies on Langmuir–Blodgett mixed films of behenic acid and over-grafted platinum nanoparticles: Effect of the behenic acid removal Progress in Solid State Chemistry. 34: 77-85. DOI: 10.1016/J.Progsolidstchem.2005.11.006 |
0.789 |
|
| 2006 |
Cavaliere-Jaricot S, Etcheberry A, Noël V, Herlem M, Perez H. Electronic transfer through Langmuir–Blodgett layers of capped platinum nanoparticles: An electrochemical approach Electrochimica Acta. 51: 6076-6080. DOI: 10.1016/J.Electacta.2006.01.068 |
0.788 |
|
| 2006 |
Raynal F, Etcheberry A, Cavaliere S, Noël V, Perez H. Characterization of the unstability of 4-mercaptoaniline capped platinum nanoparticles solution by combining LB technique and X-ray photoelectron spectroscopy Applied Surface Science. 252: 2422-2431. DOI: 10.1016/J.Apsusc.2005.05.042 |
0.367 |
|
| 2006 |
Canava B, Roussel O, Guillemoles JF, Lincot D, Etcheberry A. Increasing solar cell efficiencies based on Cu(In,Ga)Se2 after a specific chemical and oxidant treatment Physica Status Solidi (C). 3: 2551-2554. DOI: 10.1002/Pssc.200669614 |
0.37 |
|
| 2005 |
Cavaliere S, Raynal F, Etcheberry A, Herlem M, Perez H. Direct Electrochemical Activity and Stability of Capped Platinum Nanoparticles Solid State Phenomena. 106: 31-34. DOI: 10.4028/Www.Scientific.Net/Ssp.106.31 |
0.4 |
|
| 2005 |
Canava B, Gerard I, Guillemoles J-, Lincot D, Etcheberry A. Cadmium sulfide/indium phosphide as a model system for understanding indium related chemical reactivity at CIGS/CdS interface: XPS and ex situ luminescence investigations Thin Solid Films. 480: 230-235. DOI: 10.1016/J.Tsf.2004.11.074 |
0.316 |
|
| 2005 |
Simon N, Girard H, Ballutaud D, Ghodbane S, Deneuville A, Herlem M, Etcheberry A. Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes Diamond and Related Materials. 14: 1179-1182. DOI: 10.1016/J.Diamond.2004.12.013 |
0.75 |
|
| 2004 |
Ballutaud D, Boutry-Forveille A, Laroche J, Simon N, Girard H, Herlem M, Etcheberry A. Hydrogen diffusion in polycrystalline boron doped and undoped diamond. Mrs Proceedings. 813. DOI: 10.1557/Proc-813-H8.3 |
0.72 |
|
| 2004 |
Cavaliere S, Raynal F, Etcheberry A, Herlem M, Perez H. Direct Electrocatalytic Activity of Capped Platinum Nanoparticles toward Oxygen Reduction Electrochemical and Solid State Letters. 7. DOI: 10.1149/1.1792259 |
0.402 |
|
| 2004 |
Quach NC, Simon N, Gérard I, Tran Van P, Etcheberry A. Cathodic Behavior of n-InP Modified by a Thin Anodic Oxide Journal of the Electrochemical Society. 151: C318. DOI: 10.1149/1.1690783 |
0.359 |
|
| 2004 |
Simon N, Ballutaud D, Herlem M, Etcheberry A. Influence of hydrogen plasma treatment on electrochemical behavior of moderately and highly boron doped diamond electrodes Diamond and Related Materials. 13: 1050-1053. DOI: 10.1016/J.Diamond.2003.11.035 |
0.375 |
|
| 2004 |
Raynal F, Etcheberry A, Reynaud C, Perez H. Quantitative analysis and thickness dependence study of Langmuir-Blodgett films of functionalized platinum nanoparticles by X-ray photoelectron spectroscopy Applied Surface Science. 236: 198-207. DOI: 10.1016/J.Apsusc.2004.04.028 |
0.445 |
|
| 2003 |
Naghavi N, Spiering S, Powalla M, Canava B, Taisne A, Guillemoles J-, Taunier S, Etcheberry A, Lincot D. Towards Better Understanding of High Efficiency Cd-free CIGS Solar Cells Using Atomic Layer Deposited Indium Sulfide Buffer Layers Mrs Proceedings. 763. DOI: 10.1557/Proc-763-B9.9 |
0.384 |
|
| 2003 |
Seitz O, Mathieu C, Gonçalves A-, Herlem M, Etcheberry A. Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1603249 |
0.422 |
|
| 2003 |
Canava B, Vigneron J, Etcheberry A, Guimard D, Grand PP, Guillemoles J-, Lincot D, Hamatly SOS, Djebbour Z, Mencaraglia D. Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations Thin Solid Films. 431: 289-295. DOI: 10.1016/S0040-6090(03)00273-6 |
0.343 |
|
| 2003 |
Canava B, Guillemoles JF, Vigneron J, Lincot D, Etcheberry A. Chemical elaboration of well defined Cu(In,Ga)Se2 surfaces after aqueous oxidation etching Journal of Physics and Chemistry of Solids. 64: 1791-1796. DOI: 10.1016/S0022-3697(03)00201-4 |
0.392 |
|
| 2003 |
Quach NC, Gérard I, Simon N, Etcheberry A. Transient photocurrent as a probe to follow n‐InP oxidation Physica Status Solidi (C). 1033-1038. DOI: 10.1002/Pssc.200306231 |
0.412 |
|
| 2002 |
Mathieu C, Seitz O, Gonçalves AM, Herlem M, Etcheberry A. Hydrogen Evolution on InSb Semiconductor in Liquid Ammonia (223 K) Portugaliae Electrochimica Acta. 20: 199-205. DOI: 10.4152/Pea.200204199 |
0.383 |
|
| 2002 |
Seitz O, Mathieu C, Gon AM, çalves, Herlem M, Etcheberry A. Anodic Behavior of III-V Semiconductors in Liquid Ammonia (223 K) Portugaliae Electrochimica Acta. 20: 191-197. DOI: 10.4152/Pea.200204191 |
0.386 |
|
| 2002 |
Quennoy A, Rothschild A, Gérard I, Etcheberry A, Debiemme-Chouvy C. A New Application for Heteropolyanions: Etching of III-V Semiconductor Compounds Journal of Cluster Science. 13: 313-331. DOI: 10.1023/A:1020594831098 |
0.41 |
|
| 2002 |
Fellah S, Teyssot A, Ozanam F, Chazalviel J, Vigneron J, Etcheberry A. Kinetics of Electrochemical Derivatization of the Silicon Surface by Grignards Langmuir. 18: 5851-5860. DOI: 10.1021/La0203739 |
0.358 |
|
| 2002 |
Vigneron J, Herlem M, Khoumri EM, Etcheberry A. Cathodic decomposition of InP studied by XPS Applied Surface Science. 201: 51-55. DOI: 10.1016/S0169-4332(02)00472-5 |
0.409 |
|
| 2002 |
Canava B, Vigneron J, Etcheberry A, Guillemoles JF, Lincot D. High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se2 surface Applied Surface Science. 202: 8-14. DOI: 10.1016/S0169-4332(02)00186-1 |
0.333 |
|
| 2002 |
Canava B, Vigneron J, Etcheberry A, Guimard D, Guillemoles J-, Lincot D, Hamatly SOS, Djebbour Z, Mencaraglia D. XPS and electrical studies of buried interfaces in Cu(In,Ga)Se2 solar cells Thin Solid Films. 403: 425-431. DOI: 10.1016/S0040-6090(01)01539-5 |
0.347 |
|
| 2002 |
Lakard B, Herlem G, Herlem M, Etcheberry A, Morvan J, Fahys B. Spectroscopic and ab initio study of polymeric films used as chemical sensors Surface Science. 502: 296-303. DOI: 10.1016/S0039-6028(01)01967-7 |
0.408 |
|
| 2002 |
Simon N, Gerard I, Mathieu C, Etcheberry A. Study of a thin anodic oxide on n-InP by photocurrent transient, capacitance measurements and surface analysis Electrochimica Acta. 47: 2625-2631. DOI: 10.1016/S0013-4686(02)00123-8 |
0.385 |
|
| 2002 |
Quennoy A, Etcheberry A, Debiemme-Chouvy C. Study of the reactions taking place at the ‘GaAs electrode/SiMo12O404− solution’ interface Electrochimica Acta. 47: 1615-1621. DOI: 10.1016/S0013-4686(02)00003-8 |
0.399 |
|
| 2002 |
Debiemme-Chouvy C, Quennoy A, Etcheberry A. Use of XPS to follow the evolution of a solution/solid interface: SiMo12O404− acidic solution/GaAs interface Surface and Interface Analysis. 34: 628-631. DOI: 10.1002/Sia.1375 |
0.391 |
|
| 2001 |
Canava B, Vigneron J, Etcheberry A, Hamady SOS, Djebbour Z, Mencaraglia D, Guillemoles J, Lincot D. Interface Defects in CIGS-Based Solar Cells From Coupled Electrical and Chemical Points of View Mrs Proceedings. 668. DOI: 10.1557/Proc-668-H5.2 |
0.354 |
|
| 2001 |
Goncalves A-, Mathieu C, Herlem M, Etcheberry A. Oxygen Reduction Mechanism in Acidic Liquid Ammonia (223 K): Contribution of Pt Microelectrodes and III-V Semiconductors Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1344544 |
0.348 |
|
| 2001 |
Erné BH, Lefèvre F, Lorans D, Ballutaud D, Debiemme-Chouvy C, Vigneron J, Etcheberry A. Surface films on HgCdTe and CdTe etched in ferricyanide solution Applied Surface Science. 175: 579-584. DOI: 10.1016/S0169-4332(01)00125-8 |
0.39 |
|
| 2001 |
Gérard I, Simon N, Etcheberry A. Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis Applied Surface Science. 175: 734-739. DOI: 10.1016/S0169-4332(01)00083-6 |
0.377 |
|
| 2001 |
Simon N, Gérard I, Vigneron J, Etcheberry A. Thin anodic oxides on n-InP studied by photocurrent transients and surface analysis Thin Solid Films. 400: 134-138. DOI: 10.1016/S0040-6090(01)01495-X |
0.39 |
|
| 2001 |
Beaunier L, Cachet H, Cortes R, Froment M, Etcheberry A. Heteroepitaxy of electrodeposited CdSe on (100) InP and GaAs single crystals Thin Solid Films. 387: 108-110. DOI: 10.1016/S0040-6090(00)01843-5 |
0.391 |
|
| 2001 |
Etcheberry A, Cachet H, Cortes R, Froment M. Electrodeposition of CdSe on GaAs and InP substrates Surface Science. 482: 954-959. DOI: 10.1016/S0039-6028(01)00930-X |
0.326 |
|
| 2001 |
Gonçalves A-, Mathieu C, Herlem M, Etcheberry A. A striking anodic behaviour of p-GaAs semiconductor in acidic liquid ammonia (223 K) Electrochimica Acta. 46: 2835-2841. DOI: 10.1016/S0013-4686(01)00498-4 |
0.412 |
|
| 2000 |
Erné BH, Mathieu C, Vigneron J, Million A, Etcheberry A. Porous Anodic Etching of p ‐ Cd1 − x Zn x Te Studied by Photocurrent Spectroscopy Journal of the Electrochemical Society. 147: 3759-3767. DOI: 10.1149/1.1393970 |
0.386 |
|
| 2000 |
Rothschild A, Quennoy A, Etcheberry A, Debiemme-Chouvy C. Reactivity of heteropolyanions toward GaAs compound Journal of Vacuum Science and Technology. 18: 2441-2447. DOI: 10.1116/1.1289539 |
0.347 |
|
| 2000 |
Cachet H, Cortès R, Froment M, Etcheberry A. Electrodeposition of epitaxial CdSe on (111) gallium arsenide Thin Solid Films. 361: 84-87. DOI: 10.1016/S0040-6090(99)00773-7 |
0.367 |
|
| 1999 |
Sutter EMM, Gérard I, Etcheberry A. Photoluminescence as an In Situ Probe for Copper Electrodeposition on p‐GaAs Journal of the Electrochemical Society. 146: 1448-1454. DOI: 10.1149/1.1391784 |
0.321 |
|
| 1999 |
Gérard I, Debiemme-Chouvy C, Vigneron J, Bellenger F, Kostelitz S, Etcheberry A. Local oxide growth on the n-GaAs surface studied by small area XPS Surface Science. 433: 131-135. DOI: 10.1016/S0039-6028(99)00071-0 |
0.376 |
|
| 1999 |
Goncalves A-, Mathieu C, Herlem M, Etcheberry A. Using Pt microelectrodes in liquid ammonia for studying proton reduction Journal of Electroanalytical Chemistry. 477: 140-145. DOI: 10.1016/S0022-0728(99)00398-8 |
0.313 |
|
| 1999 |
Gonçalves A-, Mathieu C, Herlem M, Etcheberry A. Oxygen reduction mechanisms at p-InP and p-GaAs electrodes in liquid ammonia in neutral buffered medium and acidic media Journal of Electroanalytical Chemistry. 462: 88-96. DOI: 10.1016/S0022-0728(98)00392-1 |
0.352 |
|
| 1998 |
Sutter É, Vigneron J, Gérard I, Etcheberry A. Use of the photoluminescence intensity variation as an in-situ probe for electrochemical copper deposition on a p-type GaAs electrode Comptes Rendus De L Academie Des Sciences Serie Ii Fascicule C-Chimie. 1: 719-724. DOI: 10.1016/S1387-1609(99)80029-2 |
0.371 |
|
| 1998 |
Rothschild A, Debiemme-Chouvy C, Etcheberry A. Study of the interaction at rest potential between silicotungstic heteropolyanion solution and GaAs surface Applied Surface Science. 135: 65-70. DOI: 10.1016/S0169-4332(98)00279-7 |
0.385 |
|
| 1998 |
Moulayat NE, Etcheberry A, Mathieu C, Sutter EMM. Electrochemical characterisation of a semiconductor–metal junction: n-type InP|Cu; influence of the structure of the metallic layer Journal of Electroanalytical Chemistry. 453: 129-137. DOI: 10.1016/S0022-0728(98)00168-5 |
0.44 |
|
| 1998 |
Etcheberry A, Iranzo-Marin F, Novakovic E, Triboulet R, Debiemme-Chouvy C. Contribution to the understanding of the CdTe and Cd1 − yZnyTe surface chemistry Journal of Crystal Growth. 213-217. DOI: 10.1016/S0022-0248(98)80047-X |
0.359 |
|
| 1997 |
Etcheberry A, Gonçalves A, Mathieu C, Herlem M. Cathodic Decomposition of n‐InP during Hydrogen Evolution in Liquid Ammonia Journal of the Electrochemical Society. 144: 928-935. DOI: 10.1149/1.1837509 |
0.439 |
|
| 1997 |
Sutter EMM, Mathieu C, Moulayat NE, Etcheberry A. Effect of copper coating on the behaviour of p-InP electrodes Journal of Electroanalytical Chemistry. 429: 101-106. DOI: 10.1016/S0022-0728(96)05020-6 |
0.37 |
|
| 1997 |
Goncalves A-, Mathieu C, Herlem M, Etcheberry A. Uncommon behavior of the p-GaAs electrode during the reduction of oxygen in liquid acidic ammonia Journal of Electroanalytical Chemistry. 420: 25-29. DOI: 10.1016/S0022-0728(96)01017-0 |
0.342 |
|
| 1997 |
Iranzo-Marín F, Debiemme-Chouvy C, Gérard I, Vigneron J, Triboulet R, Etcheberry A. Enrichment in tellurium during photodissolution on n-CdTe in sulfuric acid solution Electrochimica Acta. 42: 211-221. DOI: 10.1016/0013-4686(96)00146-6 |
0.37 |
|
| 1996 |
Debiemme-Chouvy C, Marín FI, Roll U, Bujor M, Etcheberry A. Detection of cadmium oxides on a CdTe substrate by X-AES Surface Science. 495-498. DOI: 10.1016/0039-6028(95)01186-2 |
0.362 |
|
| 1996 |
Gérard I, Iranzo-Marín F, Vigneron J, Etcheberry A. Modelling of n-type CdTe photoluminescence variation with polarization: a probe of the shift of semiconductor band edges Journal of Electroanalytical Chemistry. 401: 57-63. DOI: 10.1016/0022-0728(95)04288-1 |
0.311 |
|
| 1995 |
Marín FI, Debiemme-Chouvy C, Vigneron J, Triboulet R, Etcheberry A. Ce4+: a New Etching Agent for Cadmium Telluride. Japanese Journal of Applied Physics. 34. DOI: 10.1143/Jjap.34.L1344 |
0.308 |
|
| 1995 |
Marin FI, Vigneron J, Lincot D, Etcheberry A, Debiemme-Chouvy C. Surface Evolution of n-Type CdTe in Acidic Medium in the Presence of Ce4+ Ions The Journal of Physical Chemistry. 99: 15198-15207. DOI: 10.1021/J100041A040 |
0.309 |
|
| 1995 |
Ballutaud D, Debiemme-Chouvy C, Etcheberry A, Mierry Pd, Svob L. Reactivity of III–V and II–VI semiconductors toward hydrogen: surface modification and evolution in air Applied Surface Science. 84: 187-192. DOI: 10.1016/0169-4332(94)00477-3 |
0.333 |
|
| 1995 |
Székely M, Eid B, Caillot E, Herlem M, Etcheberry A, Mathieu C, Fahys B. Electrochemical behavior of tin oxide in the presence of lithium ion in acetonitrile Journal of Electroanalytical Chemistry. 391: 69-75. DOI: 10.1016/0022-0728(95)03959-K |
0.392 |
|
| 1995 |
Debiemme-Chouvy C, Fillieres R, Vigneron J, Khoumri EM, Roy DL, Etcheberry A. Electrochemical characterization of GaSb in the presence of cerium species Electrochimica Acta. 40: 189-196. DOI: 10.1016/0013-4686(94)00304-J |
0.389 |
|
| 1994 |
Mierry Pd, Etcheberry A, Rizk R, Etchegoin P, Aucouturier M. Defects Induced in p‐Type Silicon by Photocathodic Charging of Hydrogen Journal of the Electrochemical Society. 141: 1539-1546. DOI: 10.1149/1.2054959 |
0.375 |
|
| 1994 |
Jaume J, Debiemme-Chouvy C, Vigneron J, Herlem M, Khoumri EM, Sculfort JL, Roy DL, Etcheberry A. Mise en évidence des mécanismes d'injection de porteurs majoritaires à l'interface semiconducteur/électrolyte Journal De Physique Iii. 4: 273-291. DOI: 10.1051/Jp3:1994129 |
0.394 |
|
| 1994 |
Pérotin M, Coudray P, Etcheberry A, Gouskov L, Debiemme-Chouvy C, Luquet H. Improvement of dark current of Ga(A1)Sb mesa diodes using (NH4)2S treatment Materials Science and Engineering B-Advanced Functional Solid-State Materials. 28: 374-378. DOI: 10.1016/0921-5107(94)90086-8 |
0.354 |
|
| 1994 |
Iranzo-Marín F, Debiemme-Chouvy C, Herlem M, Sculfort J-, Etcheberry A. Electrochemical techniques for the elucidation of the interface structure of the n-InP/aqueous electrolyte junction Journal of Electroanalytical Chemistry. 365: 283-287. DOI: 10.1016/0022-0728(93)02996-U |
0.321 |
|
| 1993 |
Debiemme‐Chouvy C, Ballutaud D, Pesant JC, Etcheberry A. X-ray photoelectron spectroscopy study of GaAs surface exposed to a rf hydrogen plasma Applied Physics Letters. 62: 2254-2255. DOI: 10.1063/1.109432 |
0.322 |
|
| 1993 |
Debiemme-Chouvy C, Ballutaud D, Pesant JC, Severac C, Etcheberry A. Modification of GaAs surface stoichiometry and reactivity induced by a hydrogen plasma Applied Surface Science. 643-646. DOI: 10.1016/0169-4332(93)90733-R |
0.317 |
|
| 1993 |
Casamassima M, Darque-Ceretti E, Etcheberry A, Aucouturier M. Correlation between Lewis donor/acceptor properties determined by XPS and Brönsted acid/base properties determined by rest-potential measurements, for aluminium and silicon oxides Journal of Materials Science. 28: 3997-4002. DOI: 10.1007/Bf00351220 |
0.38 |
|
| 1992 |
Preusser S, Herlem M, Etcheberry A, Jaume J. The photodissolution of InP Electrochimica Acta. 37: 289-295. DOI: 10.1016/0013-4686(92)85015-D |
0.366 |
|
| 1992 |
Debiemme-Chouvy C, Ballutaud D, Sculfort JL, Etcheberry A. XPS studies of oxide layers on InP after oxidation in the presence of Ce4 Surface and Interface Analysis. 19: 393-396. DOI: 10.1002/Sia.740190173 |
0.361 |
|
| 1991 |
Etcheberry A, Fotouhi B, Ballutaud D, l'Haridon M, Moutonnet D, Sculfort JL. Electrochemical Properties and Surface Modifications of GaInAs Ternary Alloys in Aqueous Solutions Journal of the Electrochemical Society. 138: 2802-2807. DOI: 10.1149/1.2086060 |
0.397 |
|
| 1991 |
Khoumri EM, Etcheberry A, Poliakoff O, Debiemme‐Chouvy C, Sculfort JL. Dissolution Rate of III–V Compound Oxides Influence of Cerium Species Journal of the Electrochemical Society. 138. DOI: 10.1149/1.2085451 |
0.305 |
|
| 1991 |
Casamassima M, Darque-Ceretti E, Etcheberry A, Aucouturier M. Acid—base behavior of aluminum and silicon oxides — a combination of two approaches: XPS and Lewis acido-basicity; rest potential and Brönsted acido-basicity Applied Surface Science. 52: 205-213. DOI: 10.1016/0169-4332(91)90049-P |
0.337 |
|
| 1990 |
Mierry Pd, Ballutaud D, Aucouturier M, Etcheberry A. Effect of Surface Preparations on Electrical and Chemical Surface Properties of P‐Type Silicon Journal of the Electrochemical Society. 137: 2966-2973. DOI: 10.1149/1.2087108 |
0.327 |
|
| 1989 |
Etcheberry A, Vigneron J, Sculfort JL, Gautron J. Strong enhancement of the photoluminescence of n-type indium phosphide under a cathodic polarization Applied Physics Letters. 55: 145-147. DOI: 10.1063/1.102275 |
0.347 |
|
| 1989 |
Etcheberry A, Fotouhi B, Gautron J, Pelletier S, Sculfort JL. Charge-transfer kinetics at an indium phosphide semiconductor electrode: Hole injection process in the presence of the Ce4+/Ce3+ couple Journal of Electroanalytical Chemistry. 269: 351-359. DOI: 10.1016/0022-0728(89)85143-5 |
0.335 |
|
| 1988 |
Etcheberry A, Gautron J, Sculfort JL. A study of the mechanisms of O2 reduction at n- and p-InP in acid aqueous electrolyte Journal of Electroanalytical Chemistry. 247: 265-276. DOI: 10.1016/0022-0728(88)80146-3 |
0.333 |
|
| 1987 |
Gagnaire A, Joseph J, Etcheberry A. Spectroellipsometric Study of the Electrochemical Modification of InP Journal of the Electrochemical Society. 134: 2475-2478. DOI: 10.1149/1.2100224 |
0.426 |
|
| 1985 |
Gagnaire A, Joseph J, Etcheberry A, Gautron J. An ellipsometric study of the electrochemical surface modifications of n-InP Journal of the Electrochemical Society. 132: 1655-1658. DOI: 10.1149/1.2114183 |
0.438 |
|
| 1985 |
Etcheberry A, Gautron J, Sculfort JL. Bias‐dependent photoluminescence of InP in aqueous iodine solutions Applied Physics Letters. 46: 744-746. DOI: 10.1063/1.95494 |
0.312 |
|
| 1982 |
Lemasson P, Etcheberry A, Gautron J. Analysis of photocurrents at the semiconductor—eletrolyte junction Electrochimica Acta. 27: 607-614. DOI: 10.1016/0013-4686(82)85048-2 |
0.314 |
|
| 1981 |
Mariette H, Thierry-Mieg V, Etcheberry A, Guillaume JC, Marbeuf A, Rommeluere M. Composition profiles and growth kinetics of GaxIn1−xP LPE layers: Experiments and theoretical approach Journal of Crystal Growth. 53: 413-417. DOI: 10.1016/0022-0248(81)90091-9 |
0.328 |
|
| 1980 |
Etcheberry A, Marbeuf A, Rommeluere M, Rioux J. Détermination précise de la composition de couches epitaxiées Ga1−xInxP (0≤x≤0,10) Journal of Applied Crystallography. 13: 513-515. DOI: 10.1107/S002188988001268X |
0.31 |
|
| 1980 |
Etcheberry A, Sculfort JL, Marbeuf A. Anodic photodissolution of GaP single crystal electrodes in aqueous media Solar Energy Materials. 3: 347-355. DOI: 10.1016/0165-1633(80)90023-4 |
0.345 |
|
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